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1KSMB82CA R5G 1KSMB82CA R5G Taiwan Semiconductor Corporation 1KSMB SERIES_A2102.pdf Description: TVS DIODE 70.1VWM 113VC DO214AA
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1KSMB82CAH 1KSMB82CAH Taiwan Semiconductor Corporation Description: TVS DIODE 70.1VWM 113VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1KSMB82AH 1KSMB82AH Taiwan Semiconductor Corporation Description: TVS DIODE 70.1VWM 113VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB82AH P6SMB82AH Taiwan Semiconductor Corporation Description: TVS DIODE 70.1VWM 113VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1KSMB82A R5G 1KSMB82A R5G Taiwan Semiconductor Corporation 1KSMB SERIES_A2102.pdf Description: TVS DIODE 70.1VWM 113VC DO214AA
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TESDL5V0B12P1Q0 M7G TESDL5V0B12P1Q0 M7G Taiwan Semiconductor Corporation TESDL5V0B12P1Q0_A2203.pdf Description: DFN0603-2L, 5V, 70W, 9PF, ESD PR
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecom
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN0603-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
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TESDL5V0B12P1Q0 M7G TESDL5V0B12P1Q0 M7G Taiwan Semiconductor Corporation TESDL5V0B12P1Q0_A2203.pdf Description: DFN0603-2L, 5V, 70W, 9PF, ESD PR
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecom
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN0603-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
на замовлення 9912 шт:
термін постачання 21-31 дні (днів)
17+19.64 грн
28+11.58 грн
100+7.19 грн
500+4.95 грн
1000+4.37 грн
2000+3.88 грн
5000+3.29 грн
Мінімальне замовлення: 17
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PU2BLSH PU2BLSH Taiwan Semiconductor Corporation PU2BLSH SERIES_B2109.pdf Description: DIODE GEN PURP 100V 2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
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PU2BLSH PU2BLSH Taiwan Semiconductor Corporation PU2BLSH SERIES_B2109.pdf Description: DIODE GEN PURP 100V 2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
12+27.82 грн
16+20.96 грн
100+14.10 грн
500+10.39 грн
1000+7.44 грн
Мінімальне замовлення: 12
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P6KE11AH P6KE11AH Taiwan Semiconductor Corporation P6KE%20SERIES_P2203.pdf Description: TVS DIODE 9.4VWM 15.6VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SS14LS SS14LS Taiwan Semiconductor Corporation SS12LS SERIES_D2212.pdf Description: DIODE SCHOTTKY 40V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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SS14LS SS14LS Taiwan Semiconductor Corporation SS12LS SERIES_D2212.pdf Description: DIODE SCHOTTKY 40V 1A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
на замовлення 21108 шт:
термін постачання 21-31 дні (днів)
14+23.73 грн
22+14.50 грн
100+8.04 грн
500+5.57 грн
1000+4.82 грн
2000+4.40 грн
5000+3.65 грн
Мінімальне замовлення: 14
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HER1607G HER1607G Taiwan Semiconductor Corporation pdf.php?pn=HER1607G Description: DIODE ARRAY GP 800V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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HER1608G HER1608G Taiwan Semiconductor Corporation HER1601G SERIES_J2104.pdf Description: DIODE ARRAY GP 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
3+114.55 грн
50+52.35 грн
100+46.70 грн
500+34.50 грн
1000+31.50 грн
Мінімальне замовлення: 3
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HER1608PT HER1608PT Taiwan Semiconductor Corporation HER1601PT SERIES_H2103.pdf Description: DIODE ARRAY GEN PURP 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
2+180.83 грн
50+85.43 грн
100+76.82 грн
500+57.93 грн
Мінімальне замовлення: 2
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TSM10N06CP ROG TSM10N06CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
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TSM10N06CP ROG TSM10N06CP ROG Taiwan Semiconductor Corporation Description: MOSFET N-CHANNEL 60V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
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1.5SMC82CA M6 1.5SMC82CA M6 Taiwan Semiconductor Corporation Description: TVS DIODE 1500W DO214AB SMC
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HER105G HER105G Taiwan Semiconductor Corporation HER101G SERIES_L2104.pdf Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+4.86 грн
10000+3.96 грн
Мінімальне замовлення: 5000
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HER155G HER155G Taiwan Semiconductor Corporation HER151G SERIES_I2105.pdf Description: DIODE STANDARD 400V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
3500+6.78 грн
Мінімальне замовлення: 3500
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HER154G HER154G Taiwan Semiconductor Corporation HER151G SERIES_I2105.pdf Description: DIODE STANDARD 300V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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HER156G HER156G Taiwan Semiconductor Corporation HER151G SERIES_I2105.pdf Description: DIODE STANDARD 600V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
3500+6.78 грн
Мінімальне замовлення: 3500
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ESH3C ESH3C Taiwan Semiconductor Corporation ESH3B%20SERIES_I2102.pdf Description: DIODE GEN PURP 150V 3A DO214AB
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ESH3C R6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 3A DO214AB
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ESH3C R6G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 3A DO214AB
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ESH3C M6 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 3A DO214AB
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ESH3C R7 Taiwan Semiconductor Corporation Description: DIODE GEN PURP 3A DO214AB
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SR1660 SR1660 Taiwan Semiconductor Corporation SR1620 SERIES_J2104.pdf Description: DIODE ARR SCHOTT 60V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SR1660PT C0G SR1660PT C0G Taiwan Semiconductor Corporation SR1620PT%20SERIES_J2103.pdf Description: DIODE ARR SCHOTT 60V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SR1660PTH SR1660PTH Taiwan Semiconductor Corporation SR1620PT SERIES_J2103.pdf Description: DIODE ARR SCHOTT 60V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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SR1660HC0G SR1660HC0G Taiwan Semiconductor Corporation SR1620%20SERIES_J2104.pdf Description: DIODE ARR SCHOTT 60V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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UF1DLW RVG UF1DLW RVG Taiwan Semiconductor Corporation UF1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+12.61 грн
6000+11.40 грн
Мінімальне замовлення: 3000
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UF1DLW RVG UF1DLW RVG Taiwan Semiconductor Corporation UF1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 11518 шт:
термін постачання 21-31 дні (днів)
8+44.19 грн
10+34.59 грн
100+23.54 грн
500+16.57 грн
1000+12.43 грн
Мінімальне замовлення: 8
В кошику  од. на суму  грн.
UF1DLWHRVG UF1DLWHRVG Taiwan Semiconductor Corporation UF1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
товару немає в наявності
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UF1DLWHRVG UF1DLWHRVG Taiwan Semiconductor Corporation UF1DLW%20SERIES_C2103.pdf Description: DIODE GEN PURP 200V 1A SOD123W
товару немає в наявності
В кошику  од. на суму  грн.
SFT14G SFT14G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1A 200V TS-1
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SFT14G SFT14G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 1A 200V TS-1
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SFT14G A0G SFT14G A0G Taiwan Semiconductor Corporation SFT11G%20SERIES_J2104.pdf Description: DIODE GEN PURP 200V 1A TS-1
товару немає в наявності
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SFT14GHA0G SFT14GHA0G Taiwan Semiconductor Corporation SFT11G%20SERIES_J2104.pdf Description: DIODE GEN PURP 200V 1A TS-1
товару немає в наявності
В кошику  од. на суму  грн.
SFT14GHA1G SFT14GHA1G Taiwan Semiconductor Corporation SFT11G%20SERIES_J2104.pdf Description: DIODE GEN PURP 200V 1A TS-1
товару немає в наявності
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SFT14GH SFT14GH Taiwan Semiconductor Corporation SFT11G SERIES_J2104.pdf Description: DIODE STANDARD 200V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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SFT14G A1G SFT14G A1G Taiwan Semiconductor Corporation SFT11G%20SERIES_J2104.pdf Description: DIODE GEN PURP 200V 1A TS-1
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SF14GH SF14GH Taiwan Semiconductor Corporation SF11G SERIES_H2104.pdf Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Grade: Automotive
Qualification: AEC-Q101
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ES1LDHR3G ES1LDHR3G Taiwan Semiconductor Corporation ES1LD%20SERIES_B2102.pdf Description: DIODE GEN PURP 200V 1A DO214AC
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1SMB5940 1SMB5940 Taiwan Semiconductor Corporation 1SMB5926 SERIES_M2102.pdf Description: DIODE ZENER 43V 3W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 53 Ohms
Supplier Device Package: DO-214AA (SMB)
Part Status: Active
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
товару немає в наявності
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1SMB5940H 1SMB5940H Taiwan Semiconductor Corporation 1SMB5926H SERIES_A2102.pdf Description: DIODE ZENER 43V 3W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 53 Ohms
Supplier Device Package: DO-214AA (SMB)
Grade: Automotive
Part Status: Active
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
Qualification: AEC-Q101
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SMF9.0AH SMF9.0AH Taiwan Semiconductor Corporation SMF5.0AH SERIES_A2103.pdf Description: TVS DIODE 9VWM 15.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
товару немає в наявності
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TS2937CW50 RPG TS2937CW50 RPG Taiwan Semiconductor Corporation TS2937_E15.pdf Description: IC REG LINEAR 5V 500MA SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+32.24 грн
5000+30.28 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
TS2937CW50 RPG TS2937CW50 RPG Taiwan Semiconductor Corporation TS2937_E15.pdf Description: IC REG LINEAR 5V 500MA SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
на замовлення 5994 шт:
термін постачання 21-31 дні (днів)
3+122.74 грн
10+73.36 грн
25+61.49 грн
100+45.17 грн
250+38.99 грн
500+35.19 грн
1000+31.49 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SF22GH SF22GH Taiwan Semiconductor Corporation Description: DIODE GEN PURP 100V 2A DO204AC
товару немає в наявності
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SF22G SF22G Taiwan Semiconductor Corporation Description: DIODE GEN PURP 100V 2A DO204AC
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SS36LHRUG SS36LHRUG Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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SS36LHRVG SS36LHRVG Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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SS36LHRTG SS36LHRTG Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
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TESDH3V3B02P4Q2 RIG TESDH3V3B02P4Q2 RIG Taiwan Semiconductor Corporation TESDH3V3B02P4Q2_A2203.pdf Description: TVS DIODE 3.3VWM 6VC DFN251010
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 6V
Power - Peak Pulse: 33W
Power Line Protection: Yes
Part Status: Active
товару немає в наявності
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TESDH3V3B02P4Q2 RIG TESDH3V3B02P4Q2 RIG Taiwan Semiconductor Corporation TESDH3V3B02P4Q2_A2203.pdf Description: TVS DIODE 3.3VWM 6VC DFN251010
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 6V
Power - Peak Pulse: 33W
Power Line Protection: Yes
Part Status: Active
на замовлення 2987 шт:
термін постачання 21-31 дні (днів)
12+27.82 грн
16+20.80 грн
100+14.73 грн
500+10.37 грн
1000+8.68 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
TSF20U45C TSF20U45C Taiwan Semiconductor Corporation MBR20xxCT_Rev.L13.pdf Description: DIODE ARRAY SCHOTT 45V ITO220AB
товару немає в наявності
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TUAS8M TUAS8M Taiwan Semiconductor Corporation TUAS8D SERIES_C2109.pdf Description: DIODE STANDARD 1000V 8A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
6000+18.91 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
TUAS8M TUAS8M Taiwan Semiconductor Corporation TUAS8D SERIES_C2109.pdf Description: DIODE STANDARD 1000V 8A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 10729 шт:
термін постачання 21-31 дні (днів)
4+82.64 грн
10+49.80 грн
100+32.56 грн
500+23.60 грн
1000+21.36 грн
2000+19.48 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
S8MC S8MC Taiwan Semiconductor Corporation S8GC SERIES_G2210.pdf Description: DIODE GEN PURP 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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1KSMB82CA R5G 1KSMB SERIES_A2102.pdf
1KSMB82CA R5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AA
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1KSMB82CAH
1KSMB82CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1KSMB82AH
1KSMB82AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 8.8A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 1000W (1kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB82AH
P6SMB82AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 5.5A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1KSMB82A R5G 1KSMB SERIES_A2102.pdf
1KSMB82A R5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 70.1VWM 113VC DO214AA
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TESDL5V0B12P1Q0 M7G TESDL5V0B12P1Q0_A2203.pdf
TESDL5V0B12P1Q0 M7G
Виробник: Taiwan Semiconductor Corporation
Description: DFN0603-2L, 5V, 70W, 9PF, ESD PR
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecom
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN0603-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
товару немає в наявності
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TESDL5V0B12P1Q0 M7G TESDL5V0B12P1Q0_A2203.pdf
TESDL5V0B12P1Q0 M7G
Виробник: Taiwan Semiconductor Corporation
Description: DFN0603-2L, 5V, 70W, 9PF, ESD PR
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecom
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: DFN0603-2L
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.1V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 70W
Power Line Protection: No
Part Status: Active
на замовлення 9912 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
17+19.64 грн
28+11.58 грн
100+7.19 грн
500+4.95 грн
1000+4.37 грн
2000+3.88 грн
5000+3.29 грн
Мінімальне замовлення: 17
В кошику  од. на суму  грн.
PU2BLSH PU2BLSH SERIES_B2109.pdf
PU2BLSH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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PU2BLSH PU2BLSH SERIES_B2109.pdf
PU2BLSH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 100 V
Qualification: AEC-Q101
на замовлення 1300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+27.82 грн
16+20.96 грн
100+14.10 грн
500+10.39 грн
1000+7.44 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
P6KE11AH P6KE%20SERIES_P2203.pdf
P6KE11AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9.4VWM 15.6VC DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 40A
Voltage - Reverse Standoff (Typ): 9.4V
Supplier Device Package: DO-204AC (DO-15)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10.5V
Voltage - Clamping (Max) @ Ipp: 15.6V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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SS14LS SS12LS SERIES_D2212.pdf
SS14LS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SOD123HE
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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SS14LS SS12LS SERIES_D2212.pdf
SS14LS
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SOD123HE
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
на замовлення 21108 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+23.73 грн
22+14.50 грн
100+8.04 грн
500+5.57 грн
1000+4.82 грн
2000+4.40 грн
5000+3.65 грн
Мінімальне замовлення: 14
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HER1607G pdf.php?pn=HER1607G
HER1607G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 800V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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HER1608G HER1601G SERIES_J2104.pdf
HER1608G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 16A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+114.55 грн
50+52.35 грн
100+46.70 грн
500+34.50 грн
1000+31.50 грн
Мінімальне замовлення: 3
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HER1608PT HER1601PT SERIES_H2103.pdf
HER1608PT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GEN PURP 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
на замовлення 900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+180.83 грн
50+85.43 грн
100+76.82 грн
500+57.93 грн
Мінімальне замовлення: 2
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TSM10N06CP ROG
TSM10N06CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 10A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
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TSM10N06CP ROG
TSM10N06CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: MOSFET N-CHANNEL 60V 10A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 10A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252, (D-Pak)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V
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1.5SMC82CA M6
1.5SMC82CA M6
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 1500W DO214AB SMC
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HER105G HER101G SERIES_L2104.pdf
HER105G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+4.86 грн
10000+3.96 грн
Мінімальне замовлення: 5000
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HER155G HER151G SERIES_I2105.pdf
HER155G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 400V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3500+6.78 грн
Мінімальне замовлення: 3500
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HER154G HER151G SERIES_I2105.pdf
HER154G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 300V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
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HER156G HER151G SERIES_I2105.pdf
HER156G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1.5A DO204AC
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3500+6.78 грн
Мінімальне замовлення: 3500
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ESH3C ESH3B%20SERIES_I2102.pdf
ESH3C
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 150V 3A DO214AB
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ESH3C R6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
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ESH3C R6G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
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ESH3C M6
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
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ESH3C R7
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 3A DO214AB
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SR1660 SR1620 SERIES_J2104.pdf
SR1660
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SR1660PT C0G SR1620PT%20SERIES_J2103.pdf
SR1660PT C0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SR1660PTH SR1620PT SERIES_J2103.pdf
SR1660PTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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SR1660HC0G SR1620%20SERIES_J2104.pdf
SR1660HC0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 60V 16A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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UF1DLW RVG UF1DLW%20SERIES_C2103.pdf
UF1DLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+12.61 грн
6000+11.40 грн
Мінімальне замовлення: 3000
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UF1DLW RVG UF1DLW%20SERIES_C2103.pdf
UF1DLW RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
на замовлення 11518 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.19 грн
10+34.59 грн
100+23.54 грн
500+16.57 грн
1000+12.43 грн
Мінімальне замовлення: 8
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UF1DLWHRVG UF1DLW%20SERIES_C2103.pdf
UF1DLWHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
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UF1DLWHRVG UF1DLW%20SERIES_C2103.pdf
UF1DLWHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123W
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SFT14G
SFT14G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A 200V TS-1
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SFT14G
SFT14G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A 200V TS-1
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SFT14G A0G SFT11G%20SERIES_J2104.pdf
SFT14G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
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SFT14GHA0G SFT11G%20SERIES_J2104.pdf
SFT14GHA0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
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SFT14GHA1G SFT11G%20SERIES_J2104.pdf
SFT14GHA1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
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SFT14GH SFT11G SERIES_J2104.pdf
SFT14GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A TS1
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: TS-1
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
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SFT14G A1G SFT11G%20SERIES_J2104.pdf
SFT14G A1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A TS-1
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SF14GH SF11G SERIES_H2104.pdf
SF14GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 200
Grade: Automotive
Qualification: AEC-Q101
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ES1LDHR3G ES1LD%20SERIES_B2102.pdf
ES1LDHR3G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
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1SMB5940 1SMB5926 SERIES_M2102.pdf
1SMB5940
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 3W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 53 Ohms
Supplier Device Package: DO-214AA (SMB)
Part Status: Active
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
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1SMB5940H 1SMB5926H SERIES_A2102.pdf
1SMB5940H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 43V 3W DO214AA
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 53 Ohms
Supplier Device Package: DO-214AA (SMB)
Grade: Automotive
Part Status: Active
Power - Max: 3 W
Current - Reverse Leakage @ Vr: 1 µA @ 32.7 V
Qualification: AEC-Q101
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SMF9.0AH SMF5.0AH SERIES_A2103.pdf
SMF9.0AH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 9VWM 15.4VC SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 13A
Voltage - Reverse Standoff (Typ): 9V
Supplier Device Package: SOD-123W
Unidirectional Channels: 1
Voltage - Breakdown (Min): 10V
Voltage - Clamping (Max) @ Ipp: 15.4V
Power - Peak Pulse: 200W
Power Line Protection: No
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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TS2937CW50 RPG TS2937_E15.pdf
TS2937CW50 RPG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 500MA SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+32.24 грн
5000+30.28 грн
Мінімальне замовлення: 2500
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TS2937CW50 RPG TS2937_E15.pdf
TS2937CW50 RPG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 500MA SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit
Part Status: Active
Voltage Dropout (Max): 0.7V @ 500mA
Protection Features: Over Voltage, Thermal Shutdown, Transient Voltage
Current - Supply (Max): 25 mA
на замовлення 5994 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+122.74 грн
10+73.36 грн
25+61.49 грн
100+45.17 грн
250+38.99 грн
500+35.19 грн
1000+31.49 грн
Мінімальне замовлення: 3
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SF22GH
SF22GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
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SF22G
SF22G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 2A DO204AC
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SS36LHRUG SS34L-SS310L_C2103.pdf
SS36LHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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SS36LHRVG SS34L-SS310L_C2103.pdf
SS36LHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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SS36LHRTG SS34L-SS310L_C2103.pdf
SS36LHRTG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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TESDH3V3B02P4Q2 RIG TESDH3V3B02P4Q2_A2203.pdf
TESDH3V3B02P4Q2 RIG
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 3.3VWM 6VC DFN251010
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 6V
Power - Peak Pulse: 33W
Power Line Protection: Yes
Part Status: Active
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TESDH3V3B02P4Q2 RIG TESDH3V3B02P4Q2_A2203.pdf
TESDH3V3B02P4Q2 RIG
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 3.3VWM 6VC DFN251010
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: HDMI, USB
Capacitance @ Frequency: 0.21pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: DFN2510-10
Unidirectional Channels: 4
Voltage - Breakdown (Min): 9V
Voltage - Clamping (Max) @ Ipp: 6V
Power - Peak Pulse: 33W
Power Line Protection: Yes
Part Status: Active
на замовлення 2987 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+27.82 грн
16+20.80 грн
100+14.73 грн
500+10.37 грн
1000+8.68 грн
Мінімальне замовлення: 12
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TSF20U45C MBR20xxCT_Rev.L13.pdf
TSF20U45C
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY SCHOTT 45V ITO220AB
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TUAS8M TUAS8D SERIES_C2109.pdf
TUAS8M
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 8A SMPC4.6U
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6000+18.91 грн
Мінімальне замовлення: 6000
В кошику  од. на суму  грн.
TUAS8M TUAS8D SERIES_C2109.pdf
TUAS8M
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 1000V 8A SMPC4.6U
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SMPC4.6U
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 10729 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+82.64 грн
10+49.80 грн
100+32.56 грн
500+23.60 грн
1000+21.36 грн
2000+19.48 грн
Мінімальне замовлення: 4
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S8MC S8GC SERIES_G2210.pdf
S8MC
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 8A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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