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SMBJ130CH SMBJ130CH Taiwan Semiconductor Corporation pdf.php?pn=SMBJ130CH Description: 600W, 160V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 231V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ130C SMBJ130C Taiwan Semiconductor Corporation pdf.php?pn=SMBJ130C Description: 600W, 160V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 231V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE220A P6KE220A Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 185VWM 328VC DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE220A P6KE220A Taiwan Semiconductor Corporation P6KE SERIES_P2203.pdf Description: TVS DIODE 185VWM 328VC DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 2740 шт:
термін постачання 21-31 дні (днів)
4+87.03 грн
10+52.57 грн
100+34.57 грн
500+25.18 грн
1000+22.84 грн
Мінімальне замовлення: 4 шт
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BZX85C3V9 R0G BZX85C3V9 R0G Taiwan Semiconductor Corporation BZX85C3V3 SERIES_H2301.pdf Description: DIODE ZENER 3.9V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
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BZX85C3V9 BZX85C3V9 Taiwan Semiconductor Corporation BZX85C3V3%20SERIES_H2301.pdf Description: DIODE ZENER 3.9V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
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BZX85C3V9 A0G BZX85C3V9 A0G Taiwan Semiconductor Corporation BZX85C3V3%20SERIES_H2301.pdf Description: DIODE ZENER 3.9V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
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P4KE160CAH P4KE160CAH Taiwan Semiconductor Corporation pdf.php?pn=P4KE160CA Description: TVS DIODE 136VWM 219VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SK515BH SK515BH Taiwan Semiconductor Corporation pdf.php?pn=SK515BH Description: DIODE SCHOTTKY 150V 5A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SK515B SK515B Taiwan Semiconductor Corporation pdf.php?pn=SK515B Description: DIODE SCHOTTKY 150V 5A DO214AA
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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BZX79C3V9 A0G BZX79C3V9 A0G Taiwan Semiconductor Corporation BZX79C2V0%20SERIES_H2304.pdf Description: DIODE ZENER 3.9V 500MW DO35
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
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BZX84C3V9 RFG BZX84C3V9 RFG Taiwan Semiconductor Corporation Description: DIODE ZENER 3.9V 300MW SOT23
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.40 грн
Мінімальне замовлення: 3000 шт
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BZX84C3V9 RFG BZX84C3V9 RFG Taiwan Semiconductor Corporation Description: DIODE ZENER 3.9V 300MW SOT23
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
20+16.61 грн
32+9.83 грн
100+6.13 грн
500+4.21 грн
1000+3.71 грн
Мінімальне замовлення: 20 шт
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BZX84C2V7 RFG BZX84C2V7 RFG Taiwan Semiconductor Corporation BZX84C2V4%20SERIES_F2001.pdf Description: DIODE ZENER 2.7V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+3.16 грн
6000+2.72 грн
Мінімальне замовлення: 3000 шт
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BZX84C2V7 RFG BZX84C2V7 RFG Taiwan Semiconductor Corporation BZX84C2V4%20SERIES_F2001.pdf Description: DIODE ZENER 2.7V 300MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
20+15.82 грн
34+9.14 грн
100+5.69 грн
500+3.91 грн
1000+3.44 грн
Мінімальне замовлення: 20 шт
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1N5231B A0G 1N5231B A0G Taiwan Semiconductor Corporation 1N5221B SERIES_H2301.pdf Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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S3DH S3DH Taiwan Semiconductor Corporation pdf.php?pn=S3DH Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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S3DH S3DH Taiwan Semiconductor Corporation pdf.php?pn=S3DH Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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RS3DH RS3DH Taiwan Semiconductor Corporation pdf.php?pn=RS3DH Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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HS2K HS2K Taiwan Semiconductor Corporation HS2A SERIES_L2102.pdf Description: DIODE STANDARD 800V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 5491 шт:
термін постачання 21-31 дні (днів)
11+29.27 грн
15+20.80 грн
100+11.95 грн
500+8.24 грн
1000+7.35 грн
Мінімальне замовлення: 11 шт
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BZW04-256B BZW04-256B Taiwan Semiconductor Corporation pdf.php?pn=BZW04-256B Description: TVS DIODE 256VWM 414VC DO204AL
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 414V
Voltage - Breakdown (Min): 285V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 256V
Current - Peak Pulse (10/1000µs): 1A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
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BZW04-256BH BZW04-256BH Taiwan Semiconductor Corporation pdf.php?pn=BZW04-256B Description: TVS DIODE 256VWM 414VC DO204AL
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 414V
Voltage - Breakdown (Min): 285V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 256V
Current - Peak Pulse (10/1000µs): 1A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
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BAV101 BAV101 Taiwan Semiconductor Corporation bav100.pdf bav100.pdf Description: DIODE STD 250V 200MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
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MBRS3045CT MBRS3045CT Taiwan Semiconductor Corporation MBRS3045CT_H2103.pdf Description: DIODE ARR SCHOTT 45V 30A TO263AB
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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MBRS30H45CT MBRS30H45CT Taiwan Semiconductor Corporation pdf.php?pn=MBRS30H45CT Description: DIODE ARR SCHOTT 45V 30A TO263AB
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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ABS6H ABS6H Taiwan Semiconductor Corporation ABS2 SERIES_M2103.pdf Description: BRIDGE RECT 1P 600V 800MA ABS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Average Rectified (Io): 800 mA
Voltage - Peak Reverse (Max): 600 V
Grade: Automotive
Supplier Device Package: ABS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
8+44.31 грн
12+26.51 грн
100+16.97 грн
Мінімальне замовлення: 8 шт
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MBRS16100H MBRS16100H Taiwan Semiconductor Corporation MBRS1635H SERIES_A2103.pdf Description: DIODE SCHOTTKY 100V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 16 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Qualification: AEC-Q101
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SRS16100H SRS16100H Taiwan Semiconductor Corporation SRS1620H SERIES_A2103.pdf Description: DIODE ARR SCHOT 100V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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SRS16100 SRS16100 Taiwan Semiconductor Corporation SRS1620 SERIES_L2103.pdf Description: DIODE ARR SCHOT 100V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBRS16100HMNG MBRS16100HMNG Taiwan Semiconductor Corporation MBRS1635%20SERIES_K2103.pdf Description: DIODE SCHOTTKY 100V 16A TO263AB
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 100 V
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SRS16100 MNG SRS16100 MNG Taiwan Semiconductor Corporation SRS1620%20SERIES_L2103.pdf Description: DIODE ARR SCHOT 100V 16A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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SRS16100HMNG SRS16100HMNG Taiwan Semiconductor Corporation SRS1620%20SERIES_L2103.pdf Description: DIODE ARR SCHOT 100V 16A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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P6SMB220CAH P6SMB220CAH Taiwan Semiconductor Corporation P6SMBH SERIES_A2102.pdf Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB220CA R5G P6SMB220CA R5G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6SMB220CAHR5G P6SMB220CAHR5G Taiwan Semiconductor Corporation P6SMB%20SERIES_Q2209.pdf Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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GBPC5002 GBPC5002 Taiwan Semiconductor Corporation GBPC40_50 SERIES_G2211.pdf Description: 50A, 200V, STANDARD BRIDGE RECTI
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 199 шт:
термін постачання 21-31 дні (днів)
1+814.90 грн
10+672.95 грн
25+626.77 грн
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BZV55C24 L1G BZV55C24 L1G Taiwan Semiconductor Corporation BZV55C2V4%20SERIES_H2301.pdf Description: DIODE ZENER 24V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
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SF34GH SF34GH Taiwan Semiconductor Corporation SF31G SERIES_H2105.pdf Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 2343 шт:
термін постачання 21-31 дні (днів)
10+34.81 грн
12+27.35 грн
100+19.99 грн
500+14.31 грн
Мінімальне замовлення: 10 шт
В кошику  од. на суму  грн.
SF34G SF34G Taiwan Semiconductor Corporation SF31G SERIES_H2105.pdf Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 2152 шт:
термін постачання 21-31 дні (днів)
8+39.56 грн
13+25.29 грн
100+19.99 грн
500+14.31 грн
Мінімальне замовлення: 8 шт
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HER3L03GH HER3L03GH Taiwan Semiconductor Corporation HER3L03G SERIES_C2105.pdf Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
1250+15.41 грн
2500+13.50 грн
Мінімальне замовлення: 1250 шт
В кошику  од. на суму  грн.
HER3L03GH HER3L03GH Taiwan Semiconductor Corporation HER3L03G SERIES_C2105.pdf Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
6+57.75 грн
10+34.28 грн
100+22.22 грн
500+15.96 грн
Мінімальне замовлення: 6 шт
В кошику  од. на суму  грн.
BZX84C11 RFG BZX84C11 RFG Taiwan Semiconductor Corporation BZX84C2V4 SERIES_F2001.pdf Description: DIODE ZENER 11V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.53 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BZX84C11 RFG BZX84C11 RFG Taiwan Semiconductor Corporation BZX84C2V4 SERIES_F2001.pdf Description: DIODE ZENER 11V 300MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
на замовлення 5800 шт:
термін постачання 21-31 дні (днів)
19+17.41 грн
30+10.21 грн
100+6.36 грн
500+4.37 грн
1000+3.85 грн
Мінімальне замовлення: 19 шт
В кошику  од. на суму  грн.
BC846BW RFG BC846BW RFG Taiwan Semiconductor Corporation BC846AW SERIES_C2102.pdf Description: TRANS NPN 65V 0.1A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
3000+2.58 грн
6000+2.22 грн
9000+2.08 грн
15000+1.81 грн
Мінімальне замовлення: 3000 шт
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BC846BW RFG BC846BW RFG Taiwan Semiconductor Corporation BC846AW SERIES_C2102.pdf Description: TRANS NPN 65V 0.1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
на замовлення 17535 шт:
термін постачання 21-31 дні (днів)
25+12.66 грн
40+7.62 грн
100+4.72 грн
500+3.23 грн
1000+2.84 грн
Мінімальне замовлення: 25 шт
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SMAJ22CAH SMAJ22CAH Taiwan Semiconductor Corporation SMAJH SERIES_A2102.pdf Description: TVS DIODE 22VWM 35.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ22CA R3G SMAJ22CA R3G Taiwan Semiconductor Corporation Description: TVS DIODE 22VWM 35.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 400W
Power Line Protection: No
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PGSMAJ22CAHE2G PGSMAJ22CAHE2G Taiwan Semiconductor Corporation PGSMAJ10A-PGSMAJ100A__Rev.B1805_DS.pdf Description: TVS DIODE 22VWM 35.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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TSM60NC980CP ROG TSM60NC980CP ROG Taiwan Semiconductor Corporation TSM60NC980CP_A2303.pdf Description: 600V, 4A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2500+38.86 грн
5000+34.87 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TSM60NC980CP ROG TSM60NC980CP ROG Taiwan Semiconductor Corporation TSM60NC980CP_A2303.pdf Description: 600V, 4A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
3+138.45 грн
10+84.87 грн
100+57.25 грн
500+42.60 грн
1000+39.01 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
TSM60NC980CH C5G TSM60NC980CH C5G Taiwan Semiconductor Corporation TSM60NC980CH_A2303.pdf Description: 600V, 4A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
на замовлення 13114 шт:
термін постачання 21-31 дні (днів)
3+117.88 грн
10+72.22 грн
100+48.74 грн
500+36.27 грн
1000+33.22 грн
2000+32.19 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
TSM60NC620CI C0G TSM60NC620CI C0G Taiwan Semiconductor Corporation TSM60NC620CI_A2303.pdf Description: 600V, 7A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 506 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 3990 шт:
термін постачання 21-31 дні (днів)
2+194.63 грн
10+120.98 грн
100+83.16 грн
500+62.83 грн
1000+57.93 грн
2000+53.80 грн
Мінімальне замовлення: 2 шт
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TSM60NC196CM2 RNG TSM60NC196CM2 RNG Taiwan Semiconductor Corporation TSM60NC196CM2_C2209.pdf Description: 600V, 28A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AB (D2PAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 152W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
800+150.59 грн
1600+124.16 грн
Мінімальне замовлення: 800 шт
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TSM60NC196CM2 RNG TSM60NC196CM2 RNG Taiwan Semiconductor Corporation TSM60NC196CM2_C2209.pdf Description: 600V, 28A, SINGLE N-CHANNEL POWE
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AB (D2PAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 152W (Tc)
на замовлення 2397 шт:
термін постачання 21-31 дні (днів)
2+249.22 грн
10+201.66 грн
100+163.13 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BZX55C27 A0G BZX55C27 A0G Taiwan Semiconductor Corporation BZX55C2V0%20SERIES_E2301.pdf Description: DIODE ZENER 27V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
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1N4731G R0G 1N4731G R0G Taiwan Semiconductor Corporation 1N4728G SERIES_G2301.pdf Description: DIODE ZENER 4.3V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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1N4731G A0G 1N4731G A0G Taiwan Semiconductor Corporation Description: DIODE ZENER 4.3V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
товару немає в наявності
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BZX79C20 A0G BZX79C20 A0G Taiwan Semiconductor Corporation BZX79C2V0%20SERIES_F1804.pdf Description: DIODE ZENER 20V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
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TS432BCX RFG TS432BCX RFG Taiwan Semiconductor Corporation TS432_F15.pdf Description: IC VREF SHUNT ADJ 1% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 1.24V
Current - Cathode: 65 µA
Current - Output: 12 mA
Voltage - Output (Max): 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+9.41 грн
6000+8.80 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
TS432BCX RFG TS432BCX RFG Taiwan Semiconductor Corporation TS432_F15.pdf Description: IC VREF SHUNT ADJ 1% SOT23
Packaging: Cut Tape (CT)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 1.24V
Current - Cathode: 65 µA
Current - Output: 12 mA
Voltage - Output (Max): 10 V
на замовлення 6452 шт:
термін постачання 21-31 дні (днів)
14+22.94 грн
21+14.93 грн
25+13.29 грн
100+10.74 грн
250+9.91 грн
500+9.42 грн
1000+8.86 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
SMBJ130CH pdf.php?pn=SMBJ130CH
SMBJ130CH
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 160V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 231V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMBJ130C pdf.php?pn=SMBJ130C
SMBJ130C
Виробник: Taiwan Semiconductor Corporation
Description: 600W, 160V, 10%, BIDIRECTIONAL,
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 130V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 144V
Voltage - Clamping (Max) @ Ipp: 231V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE220A P6KE SERIES_P2203.pdf
P6KE220A
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 185VWM 328VC DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6KE220A P6KE SERIES_P2203.pdf
P6KE220A
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 185VWM 328VC DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 2740 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+87.03 грн
10+52.57 грн
100+34.57 грн
500+25.18 грн
1000+22.84 грн
Мінімальне замовлення: 4 шт
В кошику  од. на суму  грн.
BZX85C3V9 R0G BZX85C3V3 SERIES_H2301.pdf
BZX85C3V9 R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
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BZX85C3V9 BZX85C3V3%20SERIES_H2301.pdf
BZX85C3V9
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
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BZX85C3V9 A0G BZX85C3V3%20SERIES_H2301.pdf
BZX85C3V9 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 1.3W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
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P4KE160CAH pdf.php?pn=P4KE160CA
P4KE160CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 136VWM 219VC DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-204AL (DO-41)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SK515BH pdf.php?pn=SK515BH
SK515BH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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SK515B pdf.php?pn=SK515B
SK515B
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 150V 5A DO214AA
Current - Reverse Leakage @ Vr: 100 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Current - Average Rectified (Io): 5A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Tape & Reel (TR)
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BZX79C3V9 A0G BZX79C2V0%20SERIES_H2304.pdf
BZX79C3V9 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 500MW DO35
Packaging: Tape & Box (TB)
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Power - Max: 500 mW
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
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BZX84C3V9 RFG
BZX84C3V9 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 300MW SOT23
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.40 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BZX84C3V9 RFG
BZX84C3V9 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 3.9V 300MW SOT23
Current - Reverse Leakage @ Vr: 3 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 300 mW
Supplier Device Package: SOT-23
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 3.9 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±5%
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+16.61 грн
32+9.83 грн
100+6.13 грн
500+4.21 грн
1000+3.71 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
BZX84C2V7 RFG BZX84C2V4%20SERIES_F2001.pdf
BZX84C2V7 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.16 грн
6000+2.72 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
BZX84C2V7 RFG BZX84C2V4%20SERIES_F2001.pdf
BZX84C2V7 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 2.7V 300MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.7 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+15.82 грн
34+9.14 грн
100+5.69 грн
500+3.91 грн
1000+3.44 грн
Мінімальне замовлення: 20 шт
В кошику  од. на суму  грн.
1N5231B A0G 1N5221B SERIES_H2301.pdf
1N5231B A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 100°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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S3DH pdf.php?pn=S3DH
S3DH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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S3DH pdf.php?pn=S3DH
S3DH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Technology: Standard
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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RS3DH pdf.php?pn=RS3DH
RS3DH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
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HS2K HS2A SERIES_L2102.pdf
HS2K
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 800V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
на замовлення 5491 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+29.27 грн
15+20.80 грн
100+11.95 грн
500+8.24 грн
1000+7.35 грн
Мінімальне замовлення: 11 шт
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BZW04-256B pdf.php?pn=BZW04-256B
BZW04-256B
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 256VWM 414VC DO204AL
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 414V
Voltage - Breakdown (Min): 285V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 256V
Current - Peak Pulse (10/1000µs): 1A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
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BZW04-256BH pdf.php?pn=BZW04-256B
BZW04-256BH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 256VWM 414VC DO204AL
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 400W
Voltage - Clamping (Max) @ Ipp: 414V
Voltage - Breakdown (Min): 285V
Bidirectional Channels: 1
Supplier Device Package: DO-204AL (DO-41)
Voltage - Reverse Standoff (Typ): 256V
Current - Peak Pulse (10/1000µs): 1A
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Tape & Reel (TR)
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BAV101 bav100.pdf bav100.pdf
BAV101
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STD 250V 200MA MINI MELF
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: Mini MELF
Operating Temperature - Junction: -65°C ~ 200°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
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MBRS3045CT MBRS3045CT_H2103.pdf
MBRS3045CT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 45V 30A TO263AB
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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MBRS30H45CT pdf.php?pn=MBRS30H45CT
MBRS30H45CT
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 45V 30A TO263AB
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 45 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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ABS6H ABS2 SERIES_M2103.pdf
ABS6H
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1P 600V 800MA ABS
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 400 mA
Current - Average Rectified (Io): 800 mA
Voltage - Peak Reverse (Max): 600 V
Grade: Automotive
Supplier Device Package: ABS
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
на замовлення 140 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+44.31 грн
12+26.51 грн
100+16.97 грн
Мінімальне замовлення: 8 шт
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MBRS16100H MBRS1635H SERIES_A2103.pdf
MBRS16100H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 16 A
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Qualification: AEC-Q101
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SRS16100H SRS1620H SERIES_A2103.pdf
SRS16100H
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 100V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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SRS16100 SRS1620 SERIES_L2103.pdf
SRS16100
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 100V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBRS16100HMNG MBRS1635%20SERIES_K2103.pdf
MBRS16100HMNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 16A TO263AB
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io): 16A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 16 A
Voltage - DC Reverse (Vr) (Max): 100 V
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SRS16100 MNG SRS1620%20SERIES_L2103.pdf
SRS16100 MNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 100V 16A TO263AB
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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SRS16100HMNG SRS1620%20SERIES_L2103.pdf
SRS16100HMNG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOT 100V 16A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D²PAK)
Current - Average Rectified (Io) (per Diode): 16A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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P6SMB220CAH P6SMBH SERIES_A2102.pdf
P6SMB220CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB220CA R5G P6SMB%20SERIES_Q2209.pdf
P6SMB220CA R5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
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P6SMB220CAHR5G P6SMB%20SERIES_Q2209.pdf
P6SMB220CAHR5G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 185VWM 328VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1.9A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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GBPC5002 GBPC40_50 SERIES_G2211.pdf
GBPC5002
Виробник: Taiwan Semiconductor Corporation
Description: 50A, 200V, STANDARD BRIDGE RECTI
Packaging: Tray
Package / Case: 4-Square, GBPC
Mounting Type: Chassis Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC
Voltage - Peak Reverse (Max): 200 V
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
на замовлення 199 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+814.90 грн
10+672.95 грн
25+626.77 грн
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BZV55C24 L1G BZV55C2V4%20SERIES_H2301.pdf
BZV55C24 L1G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 24V 500MW MINI MELF
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: Mini MELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 18 V
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SF34GH SF31G SERIES_H2105.pdf
SF34GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Qualification: AEC-Q101
на замовлення 2343 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+34.81 грн
12+27.35 грн
100+19.99 грн
500+14.31 грн
Мінімальне замовлення: 10 шт
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SF34G SF31G SERIES_H2105.pdf
SF34G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 2152 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+39.56 грн
13+25.29 грн
100+19.99 грн
500+14.31 грн
Мінімальне замовлення: 8 шт
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HER3L03GH HER3L03G SERIES_C2105.pdf
HER3L03GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1250+15.41 грн
2500+13.50 грн
Мінімальне замовлення: 1250 шт
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HER3L03GH HER3L03G SERIES_C2105.pdf
HER3L03GH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 54pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Current - Reverse Leakage @ Vr: 3 µA @ 200 V
Qualification: AEC-Q101
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+57.75 грн
10+34.28 грн
100+22.22 грн
500+15.96 грн
Мінімальне замовлення: 6 шт
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BZX84C11 RFG BZX84C2V4 SERIES_F2001.pdf
BZX84C11 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 300MW SOT23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.53 грн
Мінімальне замовлення: 3000 шт
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BZX84C11 RFG BZX84C2V4 SERIES_F2001.pdf
BZX84C11 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 11V 300MW SOT23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
на замовлення 5800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+17.41 грн
30+10.21 грн
100+6.36 грн
500+4.37 грн
1000+3.85 грн
Мінімальне замовлення: 19 шт
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BC846BW RFG BC846AW SERIES_C2102.pdf
BC846BW RFG
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 65V 0.1A SOT-323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.58 грн
6000+2.22 грн
9000+2.08 грн
15000+1.81 грн
Мінімальне замовлення: 3000 шт
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BC846BW RFG BC846AW SERIES_C2102.pdf
BC846BW RFG
Виробник: Taiwan Semiconductor Corporation
Description: TRANS NPN 65V 0.1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 200 mW
на замовлення 17535 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+12.66 грн
40+7.62 грн
100+4.72 грн
500+3.23 грн
1000+2.84 грн
Мінімальне замовлення: 25 шт
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SMAJ22CAH SMAJH SERIES_A2102.pdf
SMAJ22CAH
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ22CA R3G
SMAJ22CA R3G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 400W
Power Line Protection: No
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PGSMAJ22CAHE2G PGSMAJ10A-PGSMAJ100A__Rev.B1805_DS.pdf
PGSMAJ22CAHE2G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 22VWM 35.5VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 11.3A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.4V
Voltage - Clamping (Max) @ Ipp: 35.5V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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TSM60NC980CP ROG TSM60NC980CP_A2303.pdf
TSM60NC980CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 4A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+38.86 грн
5000+34.87 грн
Мінімальне замовлення: 2500 шт
В кошику  од. на суму  грн.
TSM60NC980CP ROG TSM60NC980CP_A2303.pdf
TSM60NC980CP ROG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 4A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+138.45 грн
10+84.87 грн
100+57.25 грн
500+42.60 грн
1000+39.01 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
TSM60NC980CH C5G TSM60NC980CH_A2303.pdf
TSM60NC980CH C5G
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 4A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
на замовлення 13114 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+117.88 грн
10+72.22 грн
100+48.74 грн
500+36.27 грн
1000+33.22 грн
2000+32.19 грн
Мінімальне замовлення: 3 шт
В кошику  од. на суму  грн.
TSM60NC620CI C0G TSM60NC620CI_A2303.pdf
TSM60NC620CI C0G
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 7A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 506 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
на замовлення 3990 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+194.63 грн
10+120.98 грн
100+83.16 грн
500+62.83 грн
1000+57.93 грн
2000+53.80 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
TSM60NC196CM2 RNG TSM60NC196CM2_C2209.pdf
TSM60NC196CM2 RNG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 28A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AB (D2PAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 152W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
на замовлення 1600 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
800+150.59 грн
1600+124.16 грн
Мінімальне замовлення: 800 шт
В кошику  од. на суму  грн.
TSM60NC196CM2 RNG TSM60NC196CM2_C2209.pdf
TSM60NC196CM2 RNG
Виробник: Taiwan Semiconductor Corporation
Description: 600V, 28A, SINGLE N-CHANNEL POWE
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AB (D2PAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 152W (Tc)
на замовлення 2397 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+249.22 грн
10+201.66 грн
100+163.13 грн
Мінімальне замовлення: 2 шт
В кошику  од. на суму  грн.
BZX55C27 A0G BZX55C2V0%20SERIES_E2301.pdf
BZX55C27 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 27V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 20 V
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1N4731G R0G 1N4728G SERIES_G2301.pdf
1N4731G R0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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1N4731G A0G
1N4731G A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 4.3V 1W DO204AL
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TA)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-204AL (DO-41)
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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BZX79C20 A0G BZX79C2V0%20SERIES_F1804.pdf
BZX79C20 A0G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 14 V
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TS432BCX RFG TS432_F15.pdf
TS432BCX RFG
Виробник: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT ADJ 1% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 1.24V
Current - Cathode: 65 µA
Current - Output: 12 mA
Voltage - Output (Max): 10 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+9.41 грн
6000+8.80 грн
Мінімальне замовлення: 3000 шт
В кошику  од. на суму  грн.
TS432BCX RFG TS432_F15.pdf
TS432BCX RFG
Виробник: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT ADJ 1% SOT23
Packaging: Cut Tape (CT)
Tolerance: ±0.5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 100ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 1.24V
Current - Cathode: 65 µA
Current - Output: 12 mA
Voltage - Output (Max): 10 V
на замовлення 6452 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
14+22.94 грн
21+14.93 грн
25+13.29 грн
100+10.74 грн
250+9.91 грн
500+9.42 грн
1000+8.86 грн
Мінімальне замовлення: 14 шт
В кошику  од. на суму  грн.
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