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TLD33AH TLD33AH Taiwan Semiconductor Corporation pdf.php?pn=TLD26AH Description: 28V, UNIDIRECTIONAL, TVS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 110A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: TO-263AB (D2PAK)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 43.5V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
2+172.47 грн
10+107.44 грн
100+73.67 грн
Мінімальне замовлення: 2
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TLD42AH TLD42AH Taiwan Semiconductor Corporation pdf.php?pn=TLD26AH Description: 36V, UNIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
товару немає в наявності
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TLD42AH TLD42AH Taiwan Semiconductor Corporation pdf.php?pn=TLD26AH Description: 36V, UNIDIRECTIONAL, TVS
Packaging: Cut Tape (CT)
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TLD39AH TLD39AH Taiwan Semiconductor Corporation pdf.php?pn=TLD26AH Description: 33V, UNIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
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TLD39AH TLD39AH Taiwan Semiconductor Corporation pdf.php?pn=TLD26AH Description: 33V, UNIDIRECTIONAL, TVS
Packaging: Cut Tape (CT)
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P6SMB6.8CA P6SMB6.8CA Taiwan Semiconductor Corporation P6SMB SERIES_Q2209.pdf description Description: TVS DIODE 5.8VWM 10.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
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BAS21A RFG BAS21A RFG Taiwan Semiconductor Corporation BAS21 SERIES_E2001.pdf Description: DIODE ARRAY GP 250V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.15 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAS21A RFG BAS21A RFG Taiwan Semiconductor Corporation BAS21 SERIES_E2001.pdf Description: DIODE ARRAY GP 250V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
20+15.40 грн
33+9.12 грн
100+5.66 грн
500+3.89 грн
1000+3.43 грн
Мінімальне замовлення: 20
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BAS21A BAS21A Taiwan Semiconductor Corporation Description: DIODE ARRAY GP 250V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
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BZT52B20 RHG BZT52B20 RHG Taiwan Semiconductor Corporation BZT52B2V4 series_F15.pdf Description: DIODE ZENER 20V 500MW SOD123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.78 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZT52B20 RHG BZT52B20 RHG Taiwan Semiconductor Corporation BZT52B2V4 series_F15.pdf Description: DIODE ZENER 20V 500MW SOD123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
на замовлення 5950 шт:
термін постачання 21-31 дні (днів)
23+13.86 грн
37+8.23 грн
100+5.07 грн
500+3.47 грн
1000+3.05 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
BZT52B20-G RHG BZT52B20-G RHG Taiwan Semiconductor Corporation BZT52B2V4-G SERIES_H2002.pdf Description: DIODE ZENER 20V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.42 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZT52B20-G RHG BZT52B20-G RHG Taiwan Semiconductor Corporation BZT52B2V4-G SERIES_H2002.pdf Description: DIODE ZENER 20V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
на замовлення 5800 шт:
термін постачання 21-31 дні (днів)
19+16.94 грн
31+9.86 грн
100+6.16 грн
500+4.23 грн
1000+3.73 грн
Мінімальне замовлення: 19
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BZT52B20S BZT52B20S Taiwan Semiconductor Corporation BZT52B2V4S%20SERIES_H2212.pdf Description: DIODE ZENER 20V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
товару немає в наявності
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BZT52B20 BZT52B20 Taiwan Semiconductor Corporation BZT52B2V4%20SERIES_F15.pdf Description: DIODE ZENER 20V 500MW SOD123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
товару немає в наявності
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BZT52B20-G BZT52B20-G Taiwan Semiconductor Corporation BZT52B2V4-G%20SERIES_H2002.pdf Description: DIODE ZENER 20V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
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AZ23C4V7 RFG AZ23C4V7 RFG Taiwan Semiconductor Corporation AZ23C2V7 SERIES_D2001.pdf Description: DIODE ZENER ARRAY 4.7V SOT-23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+5.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AZ23C4V7 RFG AZ23C4V7 RFG Taiwan Semiconductor Corporation AZ23C2V7 SERIES_D2001.pdf Description: DIODE ZENER ARRAY 4.7V SOT-23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
на замовлення 5998 шт:
термін постачання 21-31 дні (днів)
13+24.64 грн
21+14.53 грн
100+9.12 грн
500+6.34 грн
1000+5.62 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MBR30L45CTH MBR30L45CTH Taiwan Semiconductor Corporation TWSCS05157-1.pdf?t.download=true&u=5oefqw Description: DIODE ARR SCHOTT 45V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 400 µA @ 45 V
Qualification: AEC-Q101
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PUAD6J PUAD6J Taiwan Semiconductor Corporation PUAD6J_A2411.pdf Description: 25NS 6A 600V ULTRA FAST RECOVERY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
4500+17.18 грн
Мінімальне замовлення: 4500
В кошику  од. на суму  грн.
PUAD6J PUAD6J Taiwan Semiconductor Corporation PUAD6J_A2411.pdf Description: 25NS 6A 600V ULTRA FAST RECOVERY
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
4+79.31 грн
10+46.34 грн
25+38.50 грн
100+27.76 грн
250+23.66 грн
500+21.13 грн
1000+18.70 грн
Мінімальне замовлення: 4
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PUAD8J PUAD8J Taiwan Semiconductor Corporation Description: 25NS, 8A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
4500+18.88 грн
Мінімальне замовлення: 4500
В кошику  од. на суму  грн.
PUAD8J PUAD8J Taiwan Semiconductor Corporation Description: 25NS, 8A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
4+86.24 грн
10+50.20 грн
25+41.76 грн
100+30.21 грн
250+25.80 грн
500+23.08 грн
1000+20.46 грн
Мінімальне замовлення: 4
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PUAD8JH PUAD8JH Taiwan Semiconductor Corporation Description: 25NS, 8A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
4500+20.61 грн
Мінімальне замовлення: 4500
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PUAD8JH PUAD8JH Taiwan Semiconductor Corporation Description: 25NS, 8A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
4+92.40 грн
10+54.13 грн
25+45.11 грн
100+32.70 грн
250+27.98 грн
500+25.07 грн
1000+22.27 грн
Мінімальне замовлення: 4
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PU2JFSH PU2JFSH Taiwan Semiconductor Corporation Description: 25NS, 2A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 600 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU2JFSH PU2JFSH Taiwan Semiconductor Corporation Description: 25NS, 2A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 600 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU2JLWH PU2JLWH Taiwan Semiconductor Corporation Description: 25NS, 2A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU2JLWH PU2JLWH Taiwan Semiconductor Corporation Description: 25NS, 2A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU2JLSH PU2JLSH Taiwan Semiconductor Corporation Description: 25NS, 2A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123H
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU2JLSH PU2JLSH Taiwan Semiconductor Corporation Description: 25NS, 2A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123H
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU2JBH PU2JBH Taiwan Semiconductor Corporation Description: 25NS, 2A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU2JBH PU2JBH Taiwan Semiconductor Corporation Description: 25NS, 2A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU3JFSH PU3JFSH Taiwan Semiconductor Corporation Description: 25NS, 3A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU3JFSH PU3JFSH Taiwan Semiconductor Corporation Description: 25NS, 3A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU3JBH PU3JBH Taiwan Semiconductor Corporation Description: 25NS, 3A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU3JBH PU3JBH Taiwan Semiconductor Corporation Description: 25NS, 3A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU3JCH PU3JCH Taiwan Semiconductor Corporation Description: 25NS, 3A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU3JCH PU3JCH Taiwan Semiconductor Corporation Description: 25NS, 3A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU6JBH PU6JBH Taiwan Semiconductor Corporation Description: 25NS, 6A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU6JBH PU6JBH Taiwan Semiconductor Corporation Description: 25NS, 6A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU6JCH PU6JCH Taiwan Semiconductor Corporation Description: 25NS, 6A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU6JCH PU6JCH Taiwan Semiconductor Corporation Description: 25NS, 6A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU8JCH PU8JCH Taiwan Semiconductor Corporation Description: 25NS, 8A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 38pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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PU8JCH PU8JCH Taiwan Semiconductor Corporation Description: 25NS, 8A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 38pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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PUAD6JH PUAD6JH Taiwan Semiconductor Corporation Description: 25NS, 6A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PUAD6JH PUAD6JH Taiwan Semiconductor Corporation Description: 25NS, 6A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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BZT52B12-G RHG BZT52B12-G RHG Taiwan Semiconductor Corporation BZT52B2V4-G SERIES_H2002.pdf Description: DIODE ZENER 12V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+2.65 грн
6000+2.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZT52B12-G RHG BZT52B12-G RHG Taiwan Semiconductor Corporation BZT52B2V4-G SERIES_H2002.pdf Description: DIODE ZENER 12V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
20+16.17 грн
32+9.56 грн
100+5.96 грн
500+4.10 грн
1000+3.61 грн
Мінімальне замовлення: 20
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BZT52B12S BZT52B12S Taiwan Semiconductor Corporation BZT52B2V4S%20SERIES_I2411.pdf Description: DIODE ZENER 12V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
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BZT52B12 BZT52B12 Taiwan Semiconductor Corporation BZT52B2V4%20SERIES_F15.pdf Description: DIODE ZENER 12V 500MW SOD123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
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BZT52B12-G BZT52B12-G Taiwan Semiconductor Corporation BZT52B2V4-G%20SERIES_H2002.pdf Description: DIODE ZENER 12V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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1N4148WSH RRG 1N4148WSH RRG Taiwan Semiconductor Corporation pdf.php?pn=1N4148WSH Description: SOD-323, 100V, 0.15A, SWITCHING
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Supplier Device Package: SOD-323
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
1N4148WSH RRG 1N4148WSH RRG Taiwan Semiconductor Corporation pdf.php?pn=1N4148WSH Description: SOD-323, 100V, 0.15A, SWITCHING
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Supplier Device Package: SOD-323
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Qualification: AEC-Q101
на замовлення 3842 шт:
термін постачання 21-31 дні (днів)
27+11.55 грн
44+6.82 грн
100+4.23 грн
500+2.89 грн
1000+2.53 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
SS110FSH SS110FSH Taiwan Semiconductor Corporation SS14FSH SERIES_B2103.pdf Description: DIODE SCHOTTKY 100V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 36pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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BZX79C16 BZX79C16 Taiwan Semiconductor Corporation BZX79C2V0%20SERIES_H2304.pdf Description: DIODE ZENER 16V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
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BZT52C36 RHG BZT52C36 RHG Taiwan Semiconductor Corporation BZT52C2V4 SERIES_G1804.pdf Description: DIODE ZENER 36V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 25.2 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+2.52 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZT52C36 RHG BZT52C36 RHG Taiwan Semiconductor Corporation BZT52C2V4 SERIES_G1804.pdf Description: DIODE ZENER 36V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 25.2 V
на замовлення 5750 шт:
термін постачання 21-31 дні (днів)
25+12.32 грн
40+7.41 грн
100+4.59 грн
500+3.14 грн
1000+2.76 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
BZT52C36S R9G BZT52C36S R9G Taiwan Semiconductor Corporation BZT52C2V4S SERIES_J2212.pdf Description: DIODE ZENER 36V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 25.2 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+2.28 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BZT52C36S R9G BZT52C36S R9G Taiwan Semiconductor Corporation BZT52C2V4S SERIES_J2212.pdf Description: DIODE ZENER 36V 200MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 25.2 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
23+13.86 грн
37+8.08 грн
100+5.01 грн
500+3.43 грн
1000+3.02 грн
2000+2.67 грн
5000+2.26 грн
Мінімальне замовлення: 23
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TLD33AH pdf.php?pn=TLD26AH
TLD33AH
Виробник: Taiwan Semiconductor Corporation
Description: 28V, UNIDIRECTIONAL, TVS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 110A
Voltage - Reverse Standoff (Typ): 28V
Supplier Device Package: TO-263AB (D2PAK)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 31.1V
Voltage - Clamping (Max) @ Ipp: 43.5V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+172.47 грн
10+107.44 грн
100+73.67 грн
Мінімальне замовлення: 2
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TLD42AH pdf.php?pn=TLD26AH
TLD42AH
Виробник: Taiwan Semiconductor Corporation
Description: 36V, UNIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
товару немає в наявності
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TLD42AH pdf.php?pn=TLD26AH
TLD42AH
Виробник: Taiwan Semiconductor Corporation
Description: 36V, UNIDIRECTIONAL, TVS
Packaging: Cut Tape (CT)
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TLD39AH pdf.php?pn=TLD26AH
TLD39AH
Виробник: Taiwan Semiconductor Corporation
Description: 33V, UNIDIRECTIONAL, TVS
Packaging: Tape & Reel (TR)
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TLD39AH pdf.php?pn=TLD26AH
TLD39AH
Виробник: Taiwan Semiconductor Corporation
Description: 33V, UNIDIRECTIONAL, TVS
Packaging: Cut Tape (CT)
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P6SMB6.8CA description P6SMB SERIES_Q2209.pdf
P6SMB6.8CA
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 5.8VWM 10.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 5.8V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.46V
Voltage - Clamping (Max) @ Ipp: 10.5V
Power - Peak Pulse: 600W
Power Line Protection: No
товару немає в наявності
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BAS21A RFG BAS21 SERIES_E2001.pdf
BAS21A RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 250V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.15 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BAS21A RFG BAS21 SERIES_E2001.pdf
BAS21A RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 250V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+15.40 грн
33+9.12 грн
100+5.66 грн
500+3.89 грн
1000+3.43 грн
Мінімальне замовлення: 20
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BAS21A
BAS21A
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 250V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 250 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
товару немає в наявності
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BZT52B20 RHG BZT52B2V4 series_F15.pdf
BZT52B20 RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW SOD123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.78 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZT52B20 RHG BZT52B2V4 series_F15.pdf
BZT52B20 RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW SOD123F
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
на замовлення 5950 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+13.86 грн
37+8.23 грн
100+5.07 грн
500+3.47 грн
1000+3.05 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
BZT52B20-G RHG BZT52B2V4-G SERIES_H2002.pdf
BZT52B20-G RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.42 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZT52B20-G RHG BZT52B2V4-G SERIES_H2002.pdf
BZT52B20-G RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
на замовлення 5800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+16.94 грн
31+9.86 грн
100+6.16 грн
500+4.23 грн
1000+3.73 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
BZT52B20S BZT52B2V4S%20SERIES_H2212.pdf
BZT52B20S
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
товару немає в наявності
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BZT52B20 BZT52B2V4%20SERIES_F15.pdf
BZT52B20
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 500MW SOD123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 14 V
товару немає в наявності
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BZT52B20-G BZT52B2V4-G%20SERIES_H2002.pdf
BZT52B20-G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 20V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 20 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 14 V
товару немає в наявності
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AZ23C4V7 RFG AZ23C2V7 SERIES_D2001.pdf
AZ23C4V7 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER ARRAY 4.7V SOT-23
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+5.20 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
AZ23C4V7 RFG AZ23C2V7 SERIES_D2001.pdf
AZ23C4V7 RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER ARRAY 4.7V SOT-23
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 78 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
на замовлення 5998 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+24.64 грн
21+14.53 грн
100+9.12 грн
500+6.34 грн
1000+5.62 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
MBR30L45CTH TWSCS05157-1.pdf?t.download=true&u=5oefqw
MBR30L45CTH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARR SCHOTT 45V 30A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 15 A
Current - Reverse Leakage @ Vr: 400 µA @ 45 V
Qualification: AEC-Q101
товару немає в наявності
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PUAD6J PUAD6J_A2411.pdf
PUAD6J
Виробник: Taiwan Semiconductor Corporation
Description: 25NS 6A 600V ULTRA FAST RECOVERY
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4500+17.18 грн
Мінімальне замовлення: 4500
В кошику  од. на суму  грн.
PUAD6J PUAD6J_A2411.pdf
PUAD6J
Виробник: Taiwan Semiconductor Corporation
Description: 25NS 6A 600V ULTRA FAST RECOVERY
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+79.31 грн
10+46.34 грн
25+38.50 грн
100+27.76 грн
250+23.66 грн
500+21.13 грн
1000+18.70 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PUAD8J
PUAD8J
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 8A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4500+18.88 грн
Мінімальне замовлення: 4500
В кошику  од. на суму  грн.
PUAD8J
PUAD8J
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 8A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+86.24 грн
10+50.20 грн
25+41.76 грн
100+30.21 грн
250+25.80 грн
500+23.08 грн
1000+20.46 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PUAD8JH
PUAD8JH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 8A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4500+20.61 грн
Мінімальне замовлення: 4500
В кошику  од. на суму  грн.
PUAD8JH
PUAD8JH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 8A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 37pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+92.40 грн
10+54.13 грн
25+45.11 грн
100+32.70 грн
250+27.98 грн
500+25.07 грн
1000+22.27 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
PU2JFSH
PU2JFSH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 2A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 600 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU2JFSH
PU2JFSH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 2A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 600 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU2JLWH
PU2JLWH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 2A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU2JLWH
PU2JLWH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 2A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU2JLSH
PU2JLSH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 2A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123H
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU2JLSH
PU2JLSH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 2A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123H
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU2JBH
PU2JBH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 2A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU2JBH
PU2JBH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 2A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 2 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU3JFSH
PU3JFSH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 3A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU3JFSH
PU3JFSH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 3A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU3JBH
PU3JBH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 3A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU3JBH
PU3JBH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 3A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU3JCH
PU3JCH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 3A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU3JCH
PU3JCH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 3A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU6JBH
PU6JBH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 6A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU6JBH
PU6JBH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 6A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU6JCH
PU6JCH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 6A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU6JCH
PU6JCH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 6A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PU8JCH
PU8JCH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 8A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 38pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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PU8JCH
PU8JCH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 8A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 38pF @ 4V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Qualification: AEC-Q101
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PUAD6JH
PUAD6JH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 6A, 600V, ULTRA FAST RECOV
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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PUAD6JH
PUAD6JH
Виробник: Taiwan Semiconductor Corporation
Description: 25NS, 6A, 600V, ULTRA FAST RECOV
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 29pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Current - Reverse Leakage @ Vr: 2 µA @ 600 V
Qualification: AEC-Q101
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BZT52B12-G RHG BZT52B2V4-G SERIES_H2002.pdf
BZT52B12-G RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.65 грн
6000+2.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZT52B12-G RHG BZT52B2V4-G SERIES_H2002.pdf
BZT52B12-G RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 410MW SOD123
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+16.17 грн
32+9.56 грн
100+5.96 грн
500+4.10 грн
1000+3.61 грн
Мінімальне замовлення: 20
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BZT52B12S BZT52B2V4S%20SERIES_I2411.pdf
BZT52B12S
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 200MW SOD323F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
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BZT52B12 BZT52B2V4%20SERIES_F15.pdf
BZT52B12
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 500MW SOD123F
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 90 nA @ 8 V
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BZT52B12-G BZT52B2V4-G%20SERIES_H2002.pdf
BZT52B12-G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 12V 410MW SOD123
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 25 Ohms
Supplier Device Package: SOD-123
Power - Max: 410 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 8 V
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1N4148WSH RRG pdf.php?pn=1N4148WSH
1N4148WSH RRG
Виробник: Taiwan Semiconductor Corporation
Description: SOD-323, 100V, 0.15A, SWITCHING
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Supplier Device Package: SOD-323
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.28 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
1N4148WSH RRG pdf.php?pn=1N4148WSH
1N4148WSH RRG
Виробник: Taiwan Semiconductor Corporation
Description: SOD-323, 100V, 0.15A, SWITCHING
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Supplier Device Package: SOD-323
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Qualification: AEC-Q101
на замовлення 3842 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
27+11.55 грн
44+6.82 грн
100+4.23 грн
500+2.89 грн
1000+2.53 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
SS110FSH SS14FSH SERIES_B2103.pdf
SS110FSH
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 36pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-128
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 830 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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BZX79C16 BZX79C2V0%20SERIES_H2304.pdf
BZX79C16
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 16V 500MW DO35
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 11.2 V
товару немає в наявності
В кошику  од. на суму  грн.
BZT52C36 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C36 RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 500MW SOD123F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 25.2 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.52 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
BZT52C36 RHG BZT52C2V4 SERIES_G1804.pdf
BZT52C36 RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 500MW SOD123F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-123F
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 25.2 V
на замовлення 5750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+12.32 грн
40+7.41 грн
100+4.59 грн
500+3.14 грн
1000+2.76 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
BZT52C36S R9G BZT52C2V4S SERIES_J2212.pdf
BZT52C36S R9G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 200MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 25.2 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.28 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BZT52C36S R9G BZT52C2V4S SERIES_J2212.pdf
BZT52C36S R9G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 36V 200MW SOD323F
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-323F
Power - Max: 200 mW
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 45 nA @ 25.2 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+13.86 грн
37+8.08 грн
100+5.01 грн
500+3.43 грн
1000+3.02 грн
2000+2.67 грн
5000+2.26 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
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