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SS14L M2G SS14L M2G Taiwan Semiconductor Corporation SS12L%20SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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SS14L MHG SS14L MHG Taiwan Semiconductor Corporation SS12L%20SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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SS14LHM2G SS14LHM2G Taiwan Semiconductor Corporation SS12L%20SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
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SS14LHMHG SS14LHMHG Taiwan Semiconductor Corporation SS12L%20SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
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SS16HM2G SS16HM2G Taiwan Semiconductor Corporation SS12%20SERIES_P15.pdf Description: DIODE SCHOTTKY 60V 1A DO214AC
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SS16L M2G SS16L M2G Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS16L MHG SS16L MHG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS16LHM2G SS16LHM2G Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS16LHMHG SS16LHMHG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS19 M2G SS19 M2G Taiwan Semiconductor Corporation SS12%20SERIES_Q2102.pdf Description: DIODE SCHOTTKY 90V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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SS210 M4G SS210 M4G Taiwan Semiconductor Corporation SS22%20SERIES_M2102.pdf Description: DIODE SCHOTTKY 100V 2A DO214AA
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SS210HM4G SS210HM4G Taiwan Semiconductor Corporation SS22%20SERIES_M2102.pdf Description: DIODE SCHOTTKY 100V 2A DO214AA
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SS210L M2G SS210L M2G Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SS210L MHG SS210L MHG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SS210LHM2G SS210LHM2G Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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SS210LHMHG SS210LHMHG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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SS22L M2G SS22L M2G Taiwan Semiconductor Corporation SS22L%20SERIES_N15.pdf Description: DIODE SCHOTTKY 20V 2A SUB SMA
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SS22L MHG SS22L MHG Taiwan Semiconductor Corporation SS22L%20SERIES_N15.pdf Description: DIODE SCHOTTKY 20V 2A SUB SMA
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SS22LHM2G SS22LHM2G Taiwan Semiconductor Corporation SS22L%20SERIES_N15.pdf Description: DIODE SCHOTTKY 20V 2A SUB SMA
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SS22LHMHG SS22LHMHG Taiwan Semiconductor Corporation SS22L%20SERIES_N15.pdf Description: DIODE SCHOTTKY 20V 2A SUB SMA
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SS29 M4G SS29 M4G Taiwan Semiconductor Corporation SS22%20SERIES_L1705.pdf Description: DIODE SCHOTTKY 90V 2A DO214AA
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SS29HM4G SS29HM4G Taiwan Semiconductor Corporation SS22%20SERIES_L1705.pdf Description: DIODE SCHOTTKY 90V 2A DO214AA
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SS310L M2G SS310L M2G Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SS310L MHG SS310L MHG Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SS310LHM2G SS310LHM2G Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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SS310LHMHG SS310LHMHG Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
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SS36L M2G SS36L M2G Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SS36L MHG SS36L MHG Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SS36LHM2G SS36LHM2G Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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SS36LHMHG SS36LHMHG Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
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SSL12 M2G SSL12 M2G Taiwan Semiconductor Corporation SSL12%20SERIES_G13.pdf Description: DIODE SCHOTTKY 20V 1A DO214AC
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SSL12HM2G SSL12HM2G Taiwan Semiconductor Corporation SSL12%20SERIES_G13.pdf Description: DIODE SCHOTTKY 20V 1A DO214AC
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SSL22 M4G SSL22 M4G Taiwan Semiconductor Corporation SSL22%20SERIES_K1706.pdf Description: DIODE SCHOTTKY 20V 2A DO214AA
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SSL22HM4G SSL22HM4G Taiwan Semiconductor Corporation SSL22%20SERIES_K1706.pdf Description: DIODE SCHOTTKY 20V 2A DO214AA
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SSL23 M4G SSL23 M4G Taiwan Semiconductor Corporation SSL22%20SERIES_K1706.pdf Description: DIODE SCHOTTKY 30V 2A DO214AA
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SSL23HM4G SSL23HM4G Taiwan Semiconductor Corporation SSL22%20SERIES_K1706.pdf Description: DIODE SCHOTTKY 30V 2A DO214AA
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SSL24 M4G SSL24 M4G Taiwan Semiconductor Corporation SSL22%20SERIES_K1706.pdf Description: DIODE SCHOTTKY 40V 2A DO214AA
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SSL24HM4G SSL24HM4G Taiwan Semiconductor Corporation SSL22%20SERIES_K1706.pdf Description: DIODE SCHOTTKY 40V 2A DO214AA
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UG2JA M2G UG2JA M2G Taiwan Semiconductor Corporation UG2JA_C1706.pdf Description: DIODE GEN PURP 600V 2A DO214AC
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US1A M2G US1A M2G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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US1AHM2G US1AHM2G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
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US1B M2G US1B M2G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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US1BHM2G US1BHM2G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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US1D M2G US1D M2G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 200V 1A DO214AC
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US1DHM2G US1DHM2G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 200V 1A DO214AC
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US1G M2G US1G M2G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 400V 1A DO214AC
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US1GHM2G US1GHM2G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 400V 1A DO214AC
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US1J M2G US1J M2G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 600V 1A DO214AC
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US1JHM2G US1JHM2G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 600V 1A DO214AC
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US1K M2G US1K M2G Taiwan Semiconductor Corporation US1A%20SERIES_M15.pdf Description: DIODE GEN PURP 800V 1A DO214AC
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US1KHM2G US1KHM2G Taiwan Semiconductor Corporation US1A%20SERIES_M15.pdf Description: DIODE GEN PURP 800V 1A DO214AC
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US1M M2G US1M M2G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 1A DO214AC
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US1MHM2G US1MHM2G Taiwan Semiconductor Corporation US1A%20SERIES_N2102.pdf Description: DIODE GEN PURP 1A DO214AC
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1.5SMC10A M6G 1.5SMC10A M6G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_O1708.pdf Description: TVS DIODE 8.55V 14.5V DO214AB
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1.5SMC120A M6G 1.5SMC120A M6G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_S2207.pdf Description: TVS DIODE 102VWM 165VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
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1.5SMC120AHM6G 1.5SMC120AHM6G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 102VWM 165VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
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1.5SMC12A M6G 1.5SMC12A M6G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_O1708.pdf Description: TVS DIODE 10.2V 16.7V DO214AB
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1.5SMC12AHM6G 1.5SMC12AHM6G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_O1708.pdf Description: TVS DIODE 10.2V 16.7V DO214AB
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1.5SMC18A M6G 1.5SMC18A M6G Taiwan Semiconductor Corporation 1.5SMC%20SERIES_S2207.pdf Description: TVS DIODE 15.3VWM 25.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
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1.5SMC18AHM6G 1.5SMC18AHM6G Taiwan Semiconductor Corporation 1.5SMCH%20SERIES_B2207.pdf Description: TVS DIODE 15.3VWM 25.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
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SS14L M2G SS12L%20SERIES_Q2103.pdf
SS14L M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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SS14L MHG SS12L%20SERIES_Q2103.pdf
SS14L MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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SS14LHM2G SS12L%20SERIES_Q2103.pdf
SS14LHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
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SS14LHMHG SS12L%20SERIES_Q2103.pdf
SS14LHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
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SS16HM2G SS12%20SERIES_P15.pdf
SS16HM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A DO214AC
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SS16L M2G SS12L SERIES_Q2103.pdf
SS16L M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS16L MHG SS12L SERIES_Q2103.pdf
SS16L MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS16LHM2G SS12L SERIES_Q2103.pdf
SS16LHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS16LHMHG SS12L SERIES_Q2103.pdf
SS16LHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS19 M2G SS12%20SERIES_Q2102.pdf
SS19 M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 90 V
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SS210 M4G SS22%20SERIES_M2102.pdf
SS210 M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A DO214AA
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SS210HM4G SS22%20SERIES_M2102.pdf
SS210HM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A DO214AA
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SS210L M2G SS22L-SS215L_O2103.pdf
SS210L M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SS210L MHG SS22L-SS215L_O2103.pdf
SS210L MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SS210LHM2G SS22L-SS215L_O2103.pdf
SS210LHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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SS210LHMHG SS22L-SS215L_O2103.pdf
SS210LHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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SS22L M2G SS22L%20SERIES_N15.pdf
SS22L M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A SUB SMA
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SS22L MHG SS22L%20SERIES_N15.pdf
SS22L MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A SUB SMA
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SS22LHM2G SS22L%20SERIES_N15.pdf
SS22LHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A SUB SMA
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SS22LHMHG SS22L%20SERIES_N15.pdf
SS22LHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A SUB SMA
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SS29 M4G SS22%20SERIES_L1705.pdf
SS29 M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 2A DO214AA
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SS29HM4G SS22%20SERIES_L1705.pdf
SS29HM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 90V 2A DO214AA
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SS310L M2G SS34L-SS310L_C2103.pdf
SS310L M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SS310L MHG SS34L-SS310L_C2103.pdf
SS310L MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SS310LHM2G SS34L-SS310L_C2103.pdf
SS310LHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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SS310LHMHG SS34L-SS310L_C2103.pdf
SS310LHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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SS36L M2G SS34L-SS310L_C2103.pdf
SS36L M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SS36L MHG SS34L-SS310L_C2103.pdf
SS36L MHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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SS36LHM2G SS34L-SS310L_C2103.pdf
SS36LHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SS36LHMHG SS34L-SS310L_C2103.pdf
SS36LHMHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
SSL12 M2G SSL12%20SERIES_G13.pdf
SSL12 M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A DO214AC
товару немає в наявності
В кошику  од. на суму  грн.
SSL12HM2G SSL12%20SERIES_G13.pdf
SSL12HM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 1A DO214AC
товару немає в наявності
В кошику  од. на суму  грн.
SSL22 M4G SSL22%20SERIES_K1706.pdf
SSL22 M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A DO214AA
товару немає в наявності
В кошику  од. на суму  грн.
SSL22HM4G SSL22%20SERIES_K1706.pdf
SSL22HM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A DO214AA
товару немає в наявності
В кошику  од. на суму  грн.
SSL23 M4G SSL22%20SERIES_K1706.pdf
SSL23 M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A DO214AA
товару немає в наявності
В кошику  од. на суму  грн.
SSL23HM4G SSL22%20SERIES_K1706.pdf
SSL23HM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 2A DO214AA
товару немає в наявності
В кошику  од. на суму  грн.
SSL24 M4G SSL22%20SERIES_K1706.pdf
SSL24 M4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A DO214AA
товару немає в наявності
В кошику  од. на суму  грн.
SSL24HM4G SSL22%20SERIES_K1706.pdf
SSL24HM4G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 2A DO214AA
товару немає в наявності
В кошику  од. на суму  грн.
UG2JA M2G UG2JA_C1706.pdf
UG2JA M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 2A DO214AC
товару немає в наявності
В кошику  од. на суму  грн.
US1A M2G US1A%20SERIES_N2102.pdf
US1A M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
товару немає в наявності
В кошику  од. на суму  грн.
US1AHM2G US1A%20SERIES_N2102.pdf
US1AHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
US1B M2G US1A%20SERIES_N2102.pdf
US1B M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
товару немає в наявності
В кошику  од. на суму  грн.
US1BHM2G US1A%20SERIES_N2102.pdf
US1BHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
US1D M2G US1A%20SERIES_N2102.pdf
US1D M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
товару немає в наявності
В кошику  од. на суму  грн.
US1DHM2G US1A%20SERIES_N2102.pdf
US1DHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A DO214AC
товару немає в наявності
В кошику  од. на суму  грн.
US1G M2G US1A%20SERIES_N2102.pdf
US1G M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
товару немає в наявності
В кошику  од. на суму  грн.
US1GHM2G US1A%20SERIES_N2102.pdf
US1GHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A DO214AC
товару немає в наявності
В кошику  од. на суму  грн.
US1J M2G US1A%20SERIES_N2102.pdf
US1J M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
товару немає в наявності
В кошику  од. на суму  грн.
US1JHM2G US1A%20SERIES_N2102.pdf
US1JHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A DO214AC
товару немає в наявності
В кошику  од. на суму  грн.
US1K M2G US1A%20SERIES_M15.pdf
US1K M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO214AC
товару немає в наявності
В кошику  од. на суму  грн.
US1KHM2G US1A%20SERIES_M15.pdf
US1KHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A DO214AC
товару немає в наявності
В кошику  од. на суму  грн.
US1M M2G US1A%20SERIES_N2102.pdf
US1M M2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO214AC
товару немає в наявності
В кошику  од. на суму  грн.
US1MHM2G US1A%20SERIES_N2102.pdf
US1MHM2G
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A DO214AC
товару немає в наявності
В кошику  од. на суму  грн.
1.5SMC10A M6G 1.5SMC%20SERIES_O1708.pdf
1.5SMC10A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 8.55V 14.5V DO214AB
товару немає в наявності
В кошику  од. на суму  грн.
1.5SMC120A M6G 1.5SMC%20SERIES_S2207.pdf
1.5SMC120A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 102VWM 165VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
1.5SMC120AHM6G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC120AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 102VWM 165VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 9.5A
Voltage - Reverse Standoff (Typ): 102V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 114V
Voltage - Clamping (Max) @ Ipp: 165V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
1.5SMC12A M6G 1.5SMC%20SERIES_O1708.pdf
1.5SMC12A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2V 16.7V DO214AB
товару немає в наявності
В кошику  од. на суму  грн.
1.5SMC12AHM6G 1.5SMC%20SERIES_O1708.pdf
1.5SMC12AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 10.2V 16.7V DO214AB
товару немає в наявності
В кошику  од. на суму  грн.
1.5SMC18A M6G 1.5SMC%20SERIES_S2207.pdf
1.5SMC18A M6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Discontinued at Digi-Key
товару немає в наявності
В кошику  од. на суму  грн.
1.5SMC18AHM6G 1.5SMCH%20SERIES_B2207.pdf
1.5SMC18AHM6G
Виробник: Taiwan Semiconductor Corporation
Description: TVS DIODE 15.3VWM 25.5VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 60A
Voltage - Reverse Standoff (Typ): 15.3V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.1V
Voltage - Clamping (Max) @ Ipp: 25.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Part Status: Discontinued at Digi-Key
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
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