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ES1GL RUG ES1GL RUG Taiwan Semiconductor Corporation ES1AL%20SERIES_K15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
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ES1JL RUG ES1JL RUG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE STANDARD 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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ES1JLHRUG ES1JLHRUG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE STANDARD 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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ES1JLHRVG ES1JLHRVG Taiwan Semiconductor Corporation ES1AL%20SERIES_L2103.pdf Description: DIODE STANDARD 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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HS1KL RUG HS1KL RUG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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HS1ML RUG HS1ML RUG Taiwan Semiconductor Corporation HS1AL%20SERIES_C2103.pdf Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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MMBD4148CA RFG MMBD4148CA RFG Taiwan Semiconductor Corporation MMBD4148 SERIES_F2112.pdf Description: DIODE ARRAY GP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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MMBT3906 RFG MMBT3906 RFG Taiwan Semiconductor Corporation MMBT3906_I2208.pdf Description: TRANS PNP 40V 0.2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
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MMSZ5259B RHG MMSZ5259B RHG Taiwan Semiconductor Corporation MMSZ5221B%20series_F1804.pdf Description: DIODE ZENER 39V 500MW SOD123F
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RB500V-40 RRG RB500V-40 RRG Taiwan Semiconductor Corporation RB500V-40_E2304.pdf Description: DIODE SCHOTTKY 40V 100MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
на замовлення 114000 шт:
термін постачання 21-31 дні (днів)
3000+2.40 грн
6000+2.08 грн
9000+2.06 грн
15000+1.89 грн
21000+1.88 грн
30000+1.84 грн
75000+1.75 грн
Мінімальне замовлення: 3000
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RB520S-30 RKG RB520S-30 RKG Taiwan Semiconductor Corporation RB520S-30_C1804.pdf Description: DIODE SCHOTTKY 30V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
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RS1BL RUG RS1BL RUG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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RS1BLHRUG RS1BLHRUG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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RS1BLHRVG RS1BLHRVG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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RS1DL RUG RS1DL RUG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE STD 200V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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RS1GL RUG RS1GL RUG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE STD 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1KL RUG RS1KL RUG Taiwan Semiconductor Corporation RS1AL%20SERIES_N2103.pdf Description: DIODE STD 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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S1GL RUG S1GL RUG Taiwan Semiconductor Corporation S1AL%20SERIES_O15.pdf Description: DIODE GEN PURP 400V 1A SUB SMA
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SD101AW RHG SD101AW RHG Taiwan Semiconductor Corporation SD101AW SERIES_C1601.pdf Description: DIODE SCHOTTKY 60V 15MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 15mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 60 V
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SD101CW RHG SD101CW RHG Taiwan Semiconductor Corporation SD101AW SERIES_C1601.pdf Description: DIODE SCHOTTKY 40V 15MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1 ns
Technology: Schottky
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Current - Average Rectified (Io): 15mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
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SODDB3 RHG SODDB3 RHG Taiwan Semiconductor Corporation Description: DIAC/SIDAC 28-36V 2A SOD-123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 100 µA
Supplier Device Package: SOD-123
Part Status: Active
Current - Peak Output: 2 A
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SS110L RUG SS110L RUG Taiwan Semiconductor Corporation SS12L%20SERIES_Q2103.pdf Description: DIODE SCHOTTKY 100V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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SS110L RVG SS110L RVG Taiwan Semiconductor Corporation SS12L%20SERIES_P15.pdf Description: DIODE SCHOTTKY 100V 1A SUB SMA
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SS110LHRUG SS110LHRUG Taiwan Semiconductor Corporation SS12L%20SERIES_P15.pdf Description: DIODE SCHOTTKY 100V 1A SUB SMA
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SS110LHRVG SS110LHRVG Taiwan Semiconductor Corporation SS12L%20SERIES_P15.pdf Description: DIODE SCHOTTKY 100V 1A SUB SMA
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SS14L RUG SS14L RUG Taiwan Semiconductor Corporation SS12L%20SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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SS14L RVG SS14L RVG Taiwan Semiconductor Corporation SS12L%20SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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SS14LHRUG SS14LHRUG Taiwan Semiconductor Corporation SS12L%20SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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SS14LHRVG SS14LHRVG Taiwan Semiconductor Corporation SS12L%20SERIES_Q2103.pdf Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
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SS16L RUG SS16L RUG Taiwan Semiconductor Corporation SS12L%20SERIES_Q2103.pdf Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS16L RVG SS16L RVG Taiwan Semiconductor Corporation SS12L%20SERIES_Q2103.pdf Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS16LHRUG SS16LHRUG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS16LHRVG SS16LHRVG Taiwan Semiconductor Corporation SS12L SERIES_Q2103.pdf Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS210L RUG SS210L RUG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SS210LHRUG SS210LHRUG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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SS210LHRVG SS210LHRVG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 100V 2A SUB SMA
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SS22L RUG SS22L RUG Taiwan Semiconductor Corporation SS22L-SS215L_O2103.pdf Description: DIODE SCHOTTKY 20V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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SS22LHRUG SS22LHRUG Taiwan Semiconductor Corporation SS22L%20SERIES_N15.pdf Description: DIODE SCHOTTKY 20V 2A SUB SMA
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SS22LHRVG SS22LHRVG Taiwan Semiconductor Corporation SS22L%20SERIES_N15.pdf Description: DIODE SCHOTTKY 20V 2A SUB SMA
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SS310L RUG SS310L RUG Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SS310LHRUG SS310LHRUG Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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SS310LHRVG SS310LHRVG Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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SS34L RUG SS34L RUG Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 40V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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SS34LHRUG SS34LHRUG Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 40V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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SS36L RUG SS36L RUG Taiwan Semiconductor Corporation SS34L-SS310L_C2103.pdf Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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TS1431ACX RFG TS1431ACX RFG Taiwan Semiconductor Corporation Description: IC VREF SHUNT ADJ 1% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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TS431ACX-Z RFG TS431ACX-Z RFG Taiwan Semiconductor Corporation Description: IC VREF SHUNT 2.495V SOT23-3
Packaging: Tape & Reel (TR)
Part Status: Active
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TS431ARIX-Z RFG TS431ARIX-Z RFG Taiwan Semiconductor Corporation TS431_VerI2104.pdf Description: IC VREF SHUNT 36V 1% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 500 µA
Current - Output: 120 mA
Voltage - Output (Max): 36 V
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TS431BRIX-Z RFG TS431BRIX-Z RFG Taiwan Semiconductor Corporation TS431_VerI2104.pdf Description: IC VREF SHUNT 36V 0.5% SOT23
Tolerance: ±0.5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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TS78L09CX RFG TS78L09CX RFG Taiwan Semiconductor Corporation TS78L00_M2206.pdf Description: IC REG LINEAR 9V 100MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 9V
Control Features: Current Limit
Part Status: Active
PSRR: 57dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
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TS90115CX RFG TS90115CX RFG Taiwan Semiconductor Corporation TS9011_H1608.pdf Description: IC REG LINEAR 5V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit, Reset
Part Status: Active
PSRR: 30dB (100kHz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Temperature
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TS9011DCX RFG TS9011DCX RFG Taiwan Semiconductor Corporation TS9011_H1608.pdf Description: IC REG LINEAR 1.8V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Reset
Part Status: Active
PSRR: 30dB (100kHz)
Voltage Dropout (Max): 0.75V @ 120mA
Protection Features: Over Temperature
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TSOD1F10HM RVG TSOD1F10HM RVG Taiwan Semiconductor Corporation TSOD1F1HM%20SERIES_B1606.pdf Description: DIODE GEN PURP 1A SOD123FL
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TSOD1F1HM RVG TSOD1F1HM RVG Taiwan Semiconductor Corporation TSOD1F1HM%20SERIES_B1606.pdf Description: DIODE GEN PURP 100V 1A SOD123FL
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TSOD1F2HM RVG TSOD1F2HM RVG Taiwan Semiconductor Corporation TSOD1F1HM%20SERIES_B1606.pdf Description: DIODE GEN PURP 200V 1A SOD123FL
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TSOD1F4HM RVG TSOD1F4HM RVG Taiwan Semiconductor Corporation TSOD1F1HM%20SERIES_B1606.pdf Description: DIODE GEN PURP 400V 1A SOD123FL
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TSOD1F6HM RVG TSOD1F6HM RVG Taiwan Semiconductor Corporation TSOD1F1HM%20SERIES_B1606.pdf Description: DIODE GEN PURP 600V 1A SOD123FL
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TSOD1F8HM RVG TSOD1F8HM RVG Taiwan Semiconductor Corporation TSOD1F1HM%20SERIES_B1606.pdf Description: DIODE GEN PURP 800V 1A SOD123FL
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TSS54L RWG TSS54L RWG Taiwan Semiconductor Corporation Description: DIODE SCHOTTKY 30V 200MA 1005
Packaging: Tape & Reel (TR)
Package / Case: 1005 (2512 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 1005
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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TSZL52C22 RWG Taiwan Semiconductor Corporation TSZL52C2V4%20SERIES_D14.pdf Description: DIODE ZENER 22V 200MW 1005
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ES1GL RUG ES1AL%20SERIES_K15.pdf
ES1GL RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
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ES1JL RUG ES1AL%20SERIES_L2103.pdf
ES1JL RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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ES1JLHRUG ES1AL%20SERIES_L2103.pdf
ES1JLHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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ES1JLHRVG ES1AL%20SERIES_L2103.pdf
ES1JLHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STANDARD 600V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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HS1KL RUG HS1AL%20SERIES_C2103.pdf
HS1KL RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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HS1ML RUG HS1AL%20SERIES_C2103.pdf
HS1ML RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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MMBD4148CA RFG MMBD4148 SERIES_F2112.pdf
MMBD4148CA RFG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ARRAY GP 100V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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MMBT3906 RFG MMBT3906_I2208.pdf
MMBT3906 RFG
Виробник: Taiwan Semiconductor Corporation
Description: TRANS PNP 40V 0.2A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
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MMSZ5259B RHG MMSZ5221B%20series_F1804.pdf
MMSZ5259B RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 39V 500MW SOD123F
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RB500V-40 RRG RB500V-40_E2304.pdf
RB500V-40 RRG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 100MA SOD323F
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-323F
Operating Temperature - Junction: -40°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
на замовлення 114000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+2.40 грн
6000+2.08 грн
9000+2.06 грн
15000+1.89 грн
21000+1.88 грн
30000+1.84 грн
75000+1.75 грн
Мінімальне замовлення: 3000
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RB520S-30 RKG RB520S-30_C1804.pdf
RB520S-30 RKG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
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RS1BL RUG RS1AL%20SERIES_N2103.pdf
RS1BL RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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RS1BLHRUG RS1AL%20SERIES_N2103.pdf
RS1BLHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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RS1BLHRVG RS1AL%20SERIES_N2103.pdf
RS1BLHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GP 100V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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RS1DL RUG RS1AL%20SERIES_N2103.pdf
RS1DL RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STD 200V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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RS1GL RUG RS1AL%20SERIES_N2103.pdf
RS1GL RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STD 400V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RS1KL RUG RS1AL%20SERIES_N2103.pdf
RS1KL RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE STD 800V 800MA SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 800mA
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 800 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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S1GL RUG S1AL%20SERIES_O15.pdf
S1GL RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SUB SMA
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SD101AW RHG SD101AW SERIES_C1601.pdf
SD101AW RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 15MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1 ns
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 15mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 60 V
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SD101CW RHG SD101AW SERIES_C1601.pdf
SD101CW RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 15MA SOD123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1 ns
Technology: Schottky
Capacitance @ Vr, F: 2.2pF @ 0V, 1MHz
Current - Average Rectified (Io): 15mA
Supplier Device Package: SOD-123
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
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SODDB3 RHG
SODDB3 RHG
Виробник: Taiwan Semiconductor Corporation
Description: DIAC/SIDAC 28-36V 2A SOD-123
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Operating Temperature: -40°C ~ 125°C (TJ)
Voltage - Breakover: 28 ~ 36V
Current - Breakover: 100 µA
Supplier Device Package: SOD-123
Part Status: Active
Current - Peak Output: 2 A
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SS110L RUG SS12L%20SERIES_Q2103.pdf
SS110L RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
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SS110L RVG SS12L%20SERIES_P15.pdf
SS110L RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A SUB SMA
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SS110LHRUG SS12L%20SERIES_P15.pdf
SS110LHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A SUB SMA
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SS110LHRVG SS12L%20SERIES_P15.pdf
SS110LHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 1A SUB SMA
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SS14L RUG SS12L%20SERIES_Q2103.pdf
SS14L RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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SS14L RVG SS12L%20SERIES_Q2103.pdf
SS14L RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
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SS14LHRUG SS12L%20SERIES_Q2103.pdf
SS14LHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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SS14LHRVG SS12L%20SERIES_Q2103.pdf
SS14LHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 40 V
Qualification: AEC-Q101
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SS16L RUG SS12L%20SERIES_Q2103.pdf
SS16L RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS16L RVG SS12L%20SERIES_Q2103.pdf
SS16L RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS16LHRUG SS12L SERIES_Q2103.pdf
SS16LHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS16LHRVG SS12L SERIES_Q2103.pdf
SS16LHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 1A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
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SS210L RUG SS22L-SS215L_O2103.pdf
SS210L RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SS210LHRUG SS22L-SS215L_O2103.pdf
SS210LHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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SS210LHRVG SS22L-SS215L_O2103.pdf
SS210LHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 2A SUB SMA
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SS22L RUG SS22L-SS215L_O2103.pdf
SS22L RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 2 A
Current - Reverse Leakage @ Vr: 400 µA @ 20 V
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SS22LHRUG SS22L%20SERIES_N15.pdf
SS22LHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A SUB SMA
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SS22LHRVG SS22L%20SERIES_N15.pdf
SS22LHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 20V 2A SUB SMA
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SS310L RUG SS34L-SS310L_C2103.pdf
SS310L RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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SS310LHRUG SS34L-SS310L_C2103.pdf
SS310LHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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SS310LHRVG SS34L-SS310L_C2103.pdf
SS310LHRVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 100V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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SS34L RUG SS34L-SS310L_C2103.pdf
SS34L RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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SS34LHRUG SS34L-SS310L_C2103.pdf
SS34LHRUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 40V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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SS36L RUG SS34L-SS310L_C2103.pdf
SS36L RUG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 60V 3A SUB SMA
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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TS1431ACX RFG
TS1431ACX RFG
Виробник: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT ADJ 1% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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TS431ACX-Z RFG
TS431ACX-Z RFG
Виробник: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT 2.495V SOT23-3
Packaging: Tape & Reel (TR)
Part Status: Active
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TS431ARIX-Z RFG TS431_VerI2104.pdf
TS431ARIX-Z RFG
Виробник: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT 36V 1% SOT23
Packaging: Tape & Reel (TR)
Tolerance: ±1%
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -40°C ~ 125°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 500 µA
Current - Output: 120 mA
Voltage - Output (Max): 36 V
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TS431BRIX-Z RFG TS431_VerI2104.pdf
TS431BRIX-Z RFG
Виробник: Taiwan Semiconductor Corporation
Description: IC VREF SHUNT 36V 0.5% SOT23
Tolerance: ±0.5%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 50ppm/°C
Output Type: Programmable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 2.495V
Part Status: Obsolete
Current - Cathode: 600 µA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
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TS78L09CX RFG TS78L00_M2206.pdf
TS78L09CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 9V 100MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 9V
Control Features: Current Limit
Part Status: Active
PSRR: 57dB (120Hz)
Voltage Dropout (Max): 1.7V @ 100mA (Typ)
Protection Features: Over Current, Over Temperature
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TS90115CX RFG TS9011_H1608.pdf
TS90115CX RFG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 5V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 5V
Control Features: Current Limit, Reset
Part Status: Active
PSRR: 30dB (100kHz)
Voltage Dropout (Max): 0.6V @ 250mA
Protection Features: Over Temperature
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TS9011DCX RFG TS9011_H1608.pdf
TS9011DCX RFG
Виробник: Taiwan Semiconductor Corporation
Description: IC REG LINEAR 1.8V 250MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 250mA
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Current - Quiescent (Iq): 5 µA
Voltage - Input (Max): 12V
Number of Regulators: 1
Supplier Device Package: SOT-23
Voltage - Output (Min/Fixed): 1.8V
Control Features: Current Limit, Reset
Part Status: Active
PSRR: 30dB (100kHz)
Voltage Dropout (Max): 0.75V @ 120mA
Protection Features: Over Temperature
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TSOD1F10HM RVG TSOD1F1HM%20SERIES_B1606.pdf
TSOD1F10HM RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 1A SOD123FL
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TSOD1F1HM RVG TSOD1F1HM%20SERIES_B1606.pdf
TSOD1F1HM RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 1A SOD123FL
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TSOD1F2HM RVG TSOD1F1HM%20SERIES_B1606.pdf
TSOD1F2HM RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 200V 1A SOD123FL
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TSOD1F4HM RVG TSOD1F1HM%20SERIES_B1606.pdf
TSOD1F4HM RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 400V 1A SOD123FL
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TSOD1F6HM RVG TSOD1F1HM%20SERIES_B1606.pdf
TSOD1F6HM RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 600V 1A SOD123FL
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TSOD1F8HM RVG TSOD1F1HM%20SERIES_B1606.pdf
TSOD1F8HM RVG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 800V 1A SOD123FL
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TSS54L RWG
TSS54L RWG
Виробник: Taiwan Semiconductor Corporation
Description: DIODE SCHOTTKY 30V 200MA 1005
Packaging: Tape & Reel (TR)
Package / Case: 1005 (2512 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 1005
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
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TSZL52C22 RWG TSZL52C2V4%20SERIES_D14.pdf
Виробник: Taiwan Semiconductor Corporation
Description: DIODE ZENER 22V 200MW 1005
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