Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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1.5KE300A-E3/54 | VISHAY |
![]() Description: Diode: TVS; 1.5kW; 300V; 3.6A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 256V Breakdown voltage: 300V Max. forward impulse current: 3.6A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Kind of package: 13 inch reel Features of semiconductor devices: glass passivated Manufacturer series: 1.5KE Technology: TransZorb® |
на замовлення 1007 шт: термін постачання 21-30 дні (днів) |
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PE30L0FR472MAB | VISHAY |
![]() Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±20%; 6mm; linear Resistance: 4.7kΩ Power: 3W Tolerance: ±20% Max. operating voltage: 300V Temperature coefficient: 150ppm/°C IP rating: IP67 Leads: for soldering Shaft diameter: 6mm Type of potentiometer: shaft Shaft length: 38mm Characteristics: linear Mechanical rotation angle: 300 ±5° Electrical rotation angle: 270 ±10° Potentiometer features: for industrial use; for military use Shaft surface: smooth Thread length: 12mm Track material: cermet Kind of potentiometer: single turn L shaft length: 50mm Mounting: on panel Min. insulation resistance: 1TΩ Operating temperature: -55...125°C |
на замовлення 27 шт: термін постачання 21-30 дні (днів) |
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UF5404-E3/54 | VISHAY |
![]() Description: Diode: rectifying; THT; 400V; 3A; 13 inch reel; Ifsm: 150A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: 13 inch reel Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1V Reverse recovery time: 50ns Leakage current: 75µA Quantity in set/package: 1400pcs. |
на замовлення 1851 шт: термін постачання 21-30 дні (днів) |
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M64W103KB40 | VISHAY |
![]() Description: Potentiometer: mounting; vertical,multiturn; 10kΩ; 500mW; THT Mounting: THT Resistance: 10kΩ Tolerance: ±10% Temperature coefficient: 100ppm/°C IP rating: IP67 Leads: W Type of potentiometer: mounting Number of mechanical turns: 23 ±5 Characteristics: linear Torque: 1,5Ncm Track material: cermet Control: vertical Kind of potentiometer: multiturn; vertical Potentiometer standard - inch: 3/8" Terminal pitch: 2.54mm Operating temperature: -55...155°C Power: 0.5W |
на замовлення 548 шт: термін постачання 21-30 дні (днів) |
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T18104KT10 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 100kΩ; 750mW; ±10%; linear Min. insulation resistance: 1TΩ Operating temperature: -55...125°C Power: 0.75W Resistance: 100kΩ Tolerance: ±10% Temperature coefficient: 100ppm/°C IP rating: IP67 Type of potentiometer: mounting Number of electrical turns: 15 ±1 Characteristics: linear Track material: cermet Kind of potentiometer: multiturn Engineering PN: 43P; 89; 3006 Potentiometer standard: 19mm Mounting: THT |
на замовлення 14 шт: термін постачання 21-30 дні (днів) |
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14910F0GJSX10104KA | VISHAY |
![]() Description: Potentiometer: shaft; 100kΩ; 1W; ±10%; 6.35mm; THT; Shaft: smooth Type of potentiometer: shaft Resistance: 100kΩ Body dimensions: 12.5x12.5x8.8mm Potentiometer features: for industrial use Shaft surface: smooth Temperature coefficient: 150ppm/°C Max. operating voltage: 350V AC Electrical life: 25000 cycles Shaft diameter: 6.35mm Electrical rotation angle: 270 ±10° Linearity tolerance: ±5% Manufacturer series: 149 Track material: cermet Potentiometer standard: 12.5mm Mounting: THT Operating temperature: -40...150°C Power: 1W Tolerance: ±10% |
на замовлення 132 шт: термін постачання 21-30 дні (днів) |
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PE30L0FR104MAB | VISHAY |
![]() Description: Potentiometer: shaft; single turn; 100kΩ; 3W; ±20%; 6mm; linear Resistance: 100kΩ Power: 3W Tolerance: ±20% Operating temperature: -55...125°C Temperature coefficient: 150ppm/°C Type of potentiometer: shaft Shaft length: 38mm Characteristics: linear Mechanical rotation angle: 300 ±5° Electrical rotation angle: 270 ±10° Potentiometer features: for industrial use; for military use Shaft surface: smooth Thread length: 12mm Track material: cermet Kind of potentiometer: single turn L shaft length: 50mm Mounting: on panel Min. insulation resistance: 1TΩ Max. operating voltage: 300V IP rating: IP67 Leads: for soldering Shaft diameter: 6mm |
на замовлення 13 шт: термін постачання 21-30 дні (днів) |
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SQ2389ES-T1_GE3 | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -40V; -4.1A; Idm: -16A; 1W; SOT23 Case: SOT23 Drain-source voltage: -40V Drain current: -4.1A On-state resistance: 169mΩ Type of transistor: P-MOSFET Application: automotive industry Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: -16A Mounting: SMD |
на замовлення 2126 шт: термін постачання 21-30 дні (днів) |
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SIHA4N80E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Pulsed drain current: 11A Power dissipation: 69W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.27Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SIHB4N80E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Pulsed drain current: 11A Power dissipation: 69W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.27Ω Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SIHD4N80E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Pulsed drain current: 11A Power dissipation: 69W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 1.27Ω Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SIHD6N65E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; DPAK,TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 18A Power dissipation: 78W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SIHP6N65E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 18A Power dissipation: 78W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IRFP9240PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; 150W; TO247AC Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -7.5A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 44nC Kind of package: tube Kind of channel: enhancement |
на замовлення 2020 шт: термін постачання 21-30 дні (днів) |
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SF5408-TAP | VISHAY |
![]() Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; SOD64; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching Kind of package: Ammo Pack Max. forward impulse current: 150A Case: SOD64 Max. forward voltage: 1.7V Reverse recovery time: 75ns Leakage current: 50µA |
на замовлення 1706 шт: термін постачання 21-30 дні (днів) |
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GBPC3510W-E4/51 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A Type of bridge rectifier: single-phase Max. off-state voltage: 1kV Load current: 35A Max. forward impulse current: 0.4kA Version: square Case: GBPC-W Electrical mounting: THT Leads: wire Ø 1.1mm Features of semiconductor devices: glass passivated Kind of package: bulk Max. forward voltage: 1.1V |
на замовлення 178 шт: термін постачання 21-30 дні (днів) |
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IRFP32N50KPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 460W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Power dissipation: 460W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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RW0127674709JLX000 | VISHAY |
![]() Description: Resistor: wire-wound; 47Ω; 45W; ±5%; 6.3mm; Ø18.1x76.2mm Type of resistor: wire-wound Resistance: 47Ω Power: 45W Tolerance: ±5% Leads: connectors Body dimensions: Ø18.1x76.2mm Leads dimensions: 6.3mm |
на замовлення 4 шт: термін постачання 21-30 дні (днів) |
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VS-20CTQ150-M3 | VISHAY |
![]() Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220AB; Ufmax: 1V Type of diode: Schottky rectifying Case: TO220AB Mounting: THT Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Max. load current: 20A Kind of package: tube Quantity in set/package: 50pcs. Capacitance: 280pF Leakage current: 5mA Max. forward impulse current: 1030A Max. forward voltage: 1V |
на замовлення 47 шт: термін постачання 21-30 дні (днів) |
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VS-20CTQ150S-M3 | VISHAY |
![]() Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 150V; 10Ax2; tube Type of diode: Schottky rectifying Case: D2PAK; TO263AB Mounting: SMD Max. off-state voltage: 150V Load current: 10A x2 Semiconductor structure: common cathode; double Max. load current: 20A Kind of package: tube Quantity in set/package: 50pcs. Max. forward impulse current: 1030A Max. forward voltage: 0.66V |
на замовлення 372 шт: термін постачання 21-30 дні (днів) |
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NTCLE100E3222JB0A | VISHAY |
![]() Description: NTC thermistor; 2.2kΩ; THT; 3977K; -40÷125°C; ±5%; 500mW Resistance: 2.2kΩ Power: 0.5W Tolerance: ±5% Type of sensor: NTC thermistor Material constant B: 3977K Mounting: THT Operating temperature: -40...125°C |
на замовлення 1000 шт: термін постачання 21-30 дні (днів) |
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NTCLE100E3222JB0 | VISHAY |
![]() Description: NTC thermistor; 2.2kΩ; THT; 3977K; -40÷125°C; 500mW Resistance: 2.2kΩ Power: 0.5W Type of sensor: NTC thermistor Material constant B: 3977K Mounting: THT Operating temperature: -40...125°C |
на замовлення 1162 шт: термін постачання 21-30 дні (днів) |
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NTCLE100E3103JB0A | VISHAY |
![]() Description: NTC thermistor; 10kΩ; THT; 3977K; -40÷125°C; ±5%; 500mW Type of sensor: NTC thermistor Resistance: 10kΩ Mounting: THT Material constant B: 3977K Operating temperature: -40...125°C Tolerance: ±5% Power: 0.5W |
на замовлення 1603 шт: термін постачання 21-30 дні (днів) |
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T93YB504KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 500kΩ; 500mW; THT; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 500kΩ Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Manufacturer series: T93YB Track material: cermet Operating temperature: -55...125°C Potentiometer standard - inch: 3/8" Temperature coefficient: 100ppm/°C Terminal pitch: 2.5x2.5mm Body dimensions: 9.8x9.8x5mm Number of electrical turns: 19 ±2 Max. operating voltage: 250V Number of mechanical turns: 22 ±5 Engineering PN: 64Y; 67Y; 3296Y IP rating: IP67 Torque: 1,5Ncm |
на замовлення 397 шт: термін постачання 21-30 дні (днів) |
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T93YB500KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 50Ω; 500mW; THT; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 50Ω Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Manufacturer series: T93YB Track material: cermet Operating temperature: -55...125°C Potentiometer standard - inch: 3/8" Temperature coefficient: 100ppm/°C Terminal pitch: 2.5x2.5mm Body dimensions: 9.8x9.8x5mm Number of electrical turns: 19 ±2 Max. operating voltage: 250V Number of mechanical turns: 22 ±5 Engineering PN: 64Y; 67Y; 3296Y IP rating: IP67 Torque: 1,5Ncm |
на замовлення 494 шт: термін постачання 21-30 дні (днів) |
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T93YA504KT20 | VISHAY |
![]() Description: Potentiometer: mounting; multiturn; 500kΩ; 500mW; THT; ±10%; 3296W Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 500kΩ Power: 0.5W Mounting: THT Tolerance: ±10% Manufacturer series: 3296W Track material: cermet Potentiometer standard - inch: 3/8" |
на замовлення 450 шт: термін постачання 21-30 дні (днів) |
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IRFP350PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 400V; 10A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 10A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement |
на замовлення 262 шт: термін постачання 21-30 дні (днів) |
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2N7002E-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 0.24A; Idm: 1.3A; 0.22W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.24A Power dissipation: 0.22W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: SMD Gate charge: 0.6nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 1.3A |
на замовлення 2865 шт: термін постачання 21-30 дні (днів) |
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CRCW08051K10JNTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 1.1kΩ; 0.125W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 1.1kΩ Power: 0.125W Tolerance: ±5% Max. operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 500 шт: термін постачання 21-30 дні (днів) |
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CRCW08051K20FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 1.2kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 1.2kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C Mounting: SMD |
на замовлення 35200 шт: термін постачання 21-30 дні (днів) |
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CRCW08051K20JNTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 1.2kΩ; 0.125W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 1.2kΩ Power: 0.125W Tolerance: ±5% Max. operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 200 шт: термін постачання 21-30 дні (днів) |
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CRCW08051K21FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0805; 1.21kΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 1.21kΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 10000 шт: термін постачання 21-30 дні (днів) |
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BFC233620684 | VISHAY |
![]() Description: Capacitor: polypropylene; 680nF; 630VDC; 310VAC; THT; ±20%; 27.5mm Terminal pitch: 27.5mm Tolerance: ±20% Type of capacitor: polypropylene Capacitance: 0.68µF Operating voltage: 310V AC; 630V DC Body dimensions: 31x9x19mm Mounting: THT |
на замовлення 81 шт: термін постачання 21-30 дні (днів) |
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VS-ETU3006-1-M3 | VISHAY |
![]() Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; IPAK,TO262AA Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Reverse recovery time: 100ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 20pF Case: IPAK; TO262AA Max. forward voltage: 1.35V Max. forward impulse current: 200A Leakage current: 0.25mA Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
VS-ETU3006STRL-M3 | VISHAY |
![]() Description: Diode: rectifying; SMD; 600V; 30A; 100ns; D2PAK,TO263AB; Ifsm: 200A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: D2PAK; TO263AB Kind of package: 13 inch reel Quantity in set/package: 800pcs. Leakage current: 0.25mA Max. forward voltage: 1.35V Capacitance: 20pF Reverse recovery time: 100ns Max. forward impulse current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMBJ18A-E3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 20V; 20.5A; unidirectional; SMB; 7 inch reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 18V Breakdown voltage: 20V Max. forward impulse current: 20.5A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Manufacturer series: SMBJ Features of semiconductor devices: glass passivated Technology: TransZorb® |
на замовлення 2004 шт: термін постачання 21-30 дні (днів) |
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MBRB20100CT-E3/4W | VISHAY |
![]() Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 10Ax2; tube Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: D2PAK; TO263AB Max. forward voltage: 0.8V Max. forward impulse current: 150A Kind of package: tube Quantity in set/package: 50pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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NTCS0603E3103FLT | VISHAY |
![]() Description: NTC thermistor; 10kΩ; SMD; 0603; 3435K; ±1%; 125mW; -40÷150°C Type of sensor: NTC thermistor Resistance: 10kΩ Mounting: SMD Material constant B: 3435K Operating temperature: -40...150°C Tolerance: ±1% Power: 0.125W Case - inch: 0603 |
на замовлення 4120 шт: термін постачання 21-30 дні (днів) |
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NTCS0603E3103FMT | VISHAY |
![]() Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±1%; 125mW; -40÷150°C Mounting: SMD Case - inch: 0603 Resistance: 10kΩ Power: 0.125W Tolerance: ±1% Operating temperature: -40...150°C Type of sensor: NTC thermistor Material constant B: 3610K |
на замовлення 2694 шт: термін постачання 21-30 дні (днів) |
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NTCS0603E3103GMT | VISHAY |
![]() Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±2%; 125mW; -40÷150°C Mounting: SMD Case - inch: 0603 Resistance: 10kΩ Power: 0.125W Tolerance: ±2% Operating temperature: -40...150°C Type of sensor: NTC thermistor Material constant B: 3610K |
на замовлення 3739 шт: термін постачання 21-30 дні (днів) |
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NTCS0603E3103HMT | VISHAY |
![]() Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±3%; 125mW; -40÷150°C Mounting: SMD Case - inch: 0603 Resistance: 10kΩ Power: 0.125W Tolerance: ±3% Operating temperature: -40...150°C Type of sensor: NTC thermistor Material constant B: 3610K |
на замовлення 482 шт: термін постачання 21-30 дні (днів) |
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NTCS0603E3103JMT | VISHAY |
![]() Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±5%; 125mW; -40÷150°C Type of sensor: NTC thermistor Resistance: 10kΩ Mounting: SMD Material constant B: 3610K Operating temperature: -40...150°C Tolerance: ±5% Power: 0.125W Case - inch: 0603 |
на замовлення 5393 шт: термін постачання 21-30 дні (днів) |
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NTCS0603E3104FXT | VISHAY |
![]() Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±1%; 125mW; -40÷150°C Resistance: 100kΩ Type of sensor: NTC thermistor Material constant B: 4100K Case - inch: 0603 Mounting: SMD Operating temperature: -40...150°C Power: 0.125W Tolerance: ±1% |
на замовлення 975 шт: термін постачання 21-30 дні (днів) |
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NTCS0603E3104GXT | VISHAY |
![]() Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±2%; 125mW; -40÷150°C Resistance: 100kΩ Type of sensor: NTC thermistor Material constant B: 4100K Case - inch: 0603 Mounting: SMD Operating temperature: -40...150°C Power: 0.125W Tolerance: ±2% |
на замовлення 891 шт: термін постачання 21-30 дні (днів) |
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NTCS0603E3104HXT | VISHAY |
![]() Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±3%; 125mW; -40÷150°C Power: 0.125W Resistance: 100kΩ Tolerance: ±3% Type of sensor: NTC thermistor Material constant B: 4100K Case - inch: 0603 Mounting: SMD Operating temperature: -40...150°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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NTCS0603E3104JXT | VISHAY |
![]() Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±5%; 125mW; -40÷150°C Resistance: 100kΩ Type of sensor: NTC thermistor Material constant B: 4100K Case - inch: 0603 Mounting: SMD Operating temperature: -40...150°C Power: 0.125W Tolerance: ±5% |
на замовлення 7732 шт: термін постачання 21-30 дні (днів) |
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ES3D-E3/57T | VISHAY |
![]() Description: Diode: rectifying; SMD; 200V; 3A; 50ns; DO214AB,SMC; Ufmax: 0.9V Capacitance: 45pF Mounting: SMD Case: DO214AB; SMC Max. off-state voltage: 200V Max. forward voltage: 0.9V Load current: 3A Semiconductor structure: single diode Reverse recovery time: 50ns Max. forward impulse current: 100A Leakage current: 0.5mA Kind of package: 7 inch reel Type of diode: rectifying Quantity in set/package: 850pcs. Features of semiconductor devices: glass passivated; ultrafast switching |
на замовлення 1960 шт: термін постачання 21-30 дні (днів) |
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SIHG25N60EFL-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 61A; 250W; TO247AC Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of package: tube Gate charge: 75nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 61A Mounting: THT Case: TO247AC Drain-source voltage: 600V Drain current: 16A On-state resistance: 146mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
SIHG125N60EF-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 66A Power dissipation: 179W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 47nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SIHG47N60E-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 357W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 357W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 64mΩ Mounting: THT Gate charge: 0.22µC Kind of package: tube Kind of channel: enhancement |
на замовлення 240 шт: термін постачання 21-30 дні (днів) |
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SMBJ12A-E3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 13.3V; 30.2A; unidirectional; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3V Max. forward impulse current: 30.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: 7 inch reel; tape Manufacturer series: SMBJ Features of semiconductor devices: glass passivated Technology: TransZorb® |
на замовлення 2184 шт: термін постачання 21-30 дні (днів) |
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IRFR120PBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Case: DPAK; TO252 Mounting: SMD Kind of package: tube Type of transistor: N-MOSFET Power dissipation: 42W Polarisation: unipolar Gate charge: 16nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 31A Drain-source voltage: 100V Drain current: 4.9A On-state resistance: 0.27Ω |
на замовлення 919 шт: термін постачання 21-30 дні (днів) |
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BP104 | VISHAY |
![]() Description: PIN IR photodiode; DIL; THT; 950nm; 130° Type of photoelement: PIN IR photodiode Case: DIL Mounting: THT Wavelength of peak sensitivity: 950nm Viewing angle: 130° Active area: 7.5mm2 Photoreceiver features: fitted with IR filter |
на замовлення 3436 шт: термін постачання 21-30 дні (днів) |
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VBP104FAS | VISHAY |
![]() Description: PIN IR photodiode; SMD; 950nm; 780÷1050nm; 65°; 65mW Type of photoelement: PIN IR photodiode Mounting: SMD Wavelength of peak sensitivity: 950nm Wavelength: 780...1050nm Viewing angle: 65° Active area: 4.4mm2 Dimensions: 6.4x3.9x1.2mm Radiant power: 65mW |
на замовлення 383 шт: термін постачання 21-30 дні (днів) |
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TSMF1000 | VISHAY |
![]() ![]() Description: IR transmitter; 890nm; transparent; 35mW; 17°; 1.3÷1.5VDC; SMD Type of diode: IR transmitter Wavelength: 890nm Viewing angle: 17° Operating voltage: 1.3...1.5V DC Mounting: SMD Dimensions: 2.5x2x2.7mm LED current: 100mA LED version: reverse mount LED lens: transparent Radiant power: 35mW |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
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BZX85C24-TAP | VISHAY |
![]() Description: Diode: Zener; 1.3W; 24V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 24V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 8074 шт: термін постачання 21-30 дні (днів) |
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PTS120601B1K00PU00 | VISHAY |
![]() Description: Sensor: temperature; Pt1000; 1000Ω; cl.B 0,3 %; 1206; SMD; bulk Type of sensor: temperature Kind of temperature sensor: Pt1000 Resistance: 1kΩ Tolerance: cl.B 0,3 % Case: 1206 Body dimensions: 0.55x3.2x1.6mm Mounting: SMD Temperature coefficient: 3850ppm/°C Operating temperature: -55...155°C Kind of package: bulk T dimension: 0.5mm |
на замовлення 30 шт: термін постачання 21-30 дні (днів) |
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DG2502DB-T2-GE1 | VISHAY |
![]() Description: IC: analog switch; SPST-NO; Ch: 4; WCSP16; 1.8÷5.5V; reel,tape Type of integrated circuit: analog switch Number of channels: 4 Kind of package: reel; tape Output configuration: SPST-NO Mounting: SMD Case: WCSP16 Resistance: 250Ω Supply voltage: 1.8...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
DG2503DB-T2-GE1 | VISHAY |
![]() Description: IC: analog switch; SPST-NO/NC; Ch: 4; WCSP16; 1.8÷5.5V; reel,tape Type of integrated circuit: analog switch Number of channels: 4 Kind of package: reel; tape Output configuration: SPST-NO/NC Mounting: SMD Case: WCSP16 Resistance: 250Ω Supply voltage: 1.8...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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SMBJ30CA-E3/52 | VISHAY |
![]() Description: Diode: TVS; 600W; 33.3V; 12.4A; bidirectional; SMB; TransZorb®; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3V Max. forward impulse current: 12.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Manufacturer series: SMBJ Features of semiconductor devices: glass passivated Technology: TransZorb® |
на замовлення 2470 шт: термін постачання 21-30 дні (днів) |
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1.5KE300A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 300V; 3.6A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 3.6A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Technology: TransZorb®
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 300V; 3.6A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 256V
Breakdown voltage: 300V
Max. forward impulse current: 3.6A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
Manufacturer series: 1.5KE
Technology: TransZorb®
на замовлення 1007 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 32.17 грн |
15+ | 26.80 грн |
45+ | 20.52 грн |
124+ | 19.42 грн |
PE30L0FR472MAB |
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Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±20%; 6mm; linear
Resistance: 4.7kΩ
Power: 3W
Tolerance: ±20%
Max. operating voltage: 300V
Temperature coefficient: 150ppm/°C
IP rating: IP67
Leads: for soldering
Shaft diameter: 6mm
Type of potentiometer: shaft
Shaft length: 38mm
Characteristics: linear
Mechanical rotation angle: 300 ±5°
Electrical rotation angle: 270 ±10°
Potentiometer features: for industrial use; for military use
Shaft surface: smooth
Thread length: 12mm
Track material: cermet
Kind of potentiometer: single turn
L shaft length: 50mm
Mounting: on panel
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 4.7kΩ; 3W; ±20%; 6mm; linear
Resistance: 4.7kΩ
Power: 3W
Tolerance: ±20%
Max. operating voltage: 300V
Temperature coefficient: 150ppm/°C
IP rating: IP67
Leads: for soldering
Shaft diameter: 6mm
Type of potentiometer: shaft
Shaft length: 38mm
Characteristics: linear
Mechanical rotation angle: 300 ±5°
Electrical rotation angle: 270 ±10°
Potentiometer features: for industrial use; for military use
Shaft surface: smooth
Thread length: 12mm
Track material: cermet
Kind of potentiometer: single turn
L shaft length: 50mm
Mounting: on panel
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
на замовлення 27 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1577.05 грн |
2+ | 1385.01 грн |
UF5404-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 50ns
Leakage current: 75µA
Quantity in set/package: 1400pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 3A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 50ns
Leakage current: 75µA
Quantity in set/package: 1400pcs.
на замовлення 1851 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 47.40 грн |
17+ | 24.05 грн |
64+ | 14.62 грн |
174+ | 13.83 грн |
1000+ | 13.60 грн |
1400+ | 13.28 грн |
M64W103KB40 |
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Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; vertical,multiturn; 10kΩ; 500mW; THT
Mounting: THT
Resistance: 10kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Leads: W
Type of potentiometer: mounting
Number of mechanical turns: 23 ±5
Characteristics: linear
Torque: 1,5Ncm
Track material: cermet
Control: vertical
Kind of potentiometer: multiturn; vertical
Potentiometer standard - inch: 3/8"
Terminal pitch: 2.54mm
Operating temperature: -55...155°C
Power: 0.5W
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; vertical,multiturn; 10kΩ; 500mW; THT
Mounting: THT
Resistance: 10kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Leads: W
Type of potentiometer: mounting
Number of mechanical turns: 23 ±5
Characteristics: linear
Torque: 1,5Ncm
Track material: cermet
Control: vertical
Kind of potentiometer: multiturn; vertical
Potentiometer standard - inch: 3/8"
Terminal pitch: 2.54mm
Operating temperature: -55...155°C
Power: 0.5W
на замовлення 548 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 244.64 грн |
9+ | 107.69 грн |
24+ | 102.19 грн |
T18104KT10 |
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Виробник: VISHAY
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 100kΩ; 750mW; ±10%; linear
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Power: 0.75W
Resistance: 100kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Potentiometer standard: 19mm
Mounting: THT
Category: 19mm multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 100kΩ; 750mW; ±10%; linear
Min. insulation resistance: 1TΩ
Operating temperature: -55...125°C
Power: 0.75W
Resistance: 100kΩ
Tolerance: ±10%
Temperature coefficient: 100ppm/°C
IP rating: IP67
Type of potentiometer: mounting
Number of electrical turns: 15 ±1
Characteristics: linear
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 43P; 89; 3006
Potentiometer standard: 19mm
Mounting: THT
на замовлення 14 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 163.38 грн |
5+ | 121.05 грн |
10+ | 111.62 грн |
11+ | 91.97 грн |
14910F0GJSX10104KA |
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Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; 100kΩ; 1W; ±10%; 6.35mm; THT; Shaft: smooth
Type of potentiometer: shaft
Resistance: 100kΩ
Body dimensions: 12.5x12.5x8.8mm
Potentiometer features: for industrial use
Shaft surface: smooth
Temperature coefficient: 150ppm/°C
Max. operating voltage: 350V AC
Electrical life: 25000 cycles
Shaft diameter: 6.35mm
Electrical rotation angle: 270 ±10°
Linearity tolerance: ±5%
Manufacturer series: 149
Track material: cermet
Potentiometer standard: 12.5mm
Mounting: THT
Operating temperature: -40...150°C
Power: 1W
Tolerance: ±10%
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; 100kΩ; 1W; ±10%; 6.35mm; THT; Shaft: smooth
Type of potentiometer: shaft
Resistance: 100kΩ
Body dimensions: 12.5x12.5x8.8mm
Potentiometer features: for industrial use
Shaft surface: smooth
Temperature coefficient: 150ppm/°C
Max. operating voltage: 350V AC
Electrical life: 25000 cycles
Shaft diameter: 6.35mm
Electrical rotation angle: 270 ±10°
Linearity tolerance: ±5%
Manufacturer series: 149
Track material: cermet
Potentiometer standard: 12.5mm
Mounting: THT
Operating temperature: -40...150°C
Power: 1W
Tolerance: ±10%
на замовлення 132 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1202.05 грн |
2+ | 660.28 грн |
4+ | 624.12 грн |
PE30L0FR104MAB |
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Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 100kΩ; 3W; ±20%; 6mm; linear
Resistance: 100kΩ
Power: 3W
Tolerance: ±20%
Operating temperature: -55...125°C
Temperature coefficient: 150ppm/°C
Type of potentiometer: shaft
Shaft length: 38mm
Characteristics: linear
Mechanical rotation angle: 300 ±5°
Electrical rotation angle: 270 ±10°
Potentiometer features: for industrial use; for military use
Shaft surface: smooth
Thread length: 12mm
Track material: cermet
Kind of potentiometer: single turn
L shaft length: 50mm
Mounting: on panel
Min. insulation resistance: 1TΩ
Max. operating voltage: 300V
IP rating: IP67
Leads: for soldering
Shaft diameter: 6mm
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 100kΩ; 3W; ±20%; 6mm; linear
Resistance: 100kΩ
Power: 3W
Tolerance: ±20%
Operating temperature: -55...125°C
Temperature coefficient: 150ppm/°C
Type of potentiometer: shaft
Shaft length: 38mm
Characteristics: linear
Mechanical rotation angle: 300 ±5°
Electrical rotation angle: 270 ±10°
Potentiometer features: for industrial use; for military use
Shaft surface: smooth
Thread length: 12mm
Track material: cermet
Kind of potentiometer: single turn
L shaft length: 50mm
Mounting: on panel
Min. insulation resistance: 1TΩ
Max. operating voltage: 300V
IP rating: IP67
Leads: for soldering
Shaft diameter: 6mm
на замовлення 13 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1732.81 грн |
2+ | 1521.79 грн |
SQ2389ES-T1_GE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.1A; Idm: -16A; 1W; SOT23
Case: SOT23
Drain-source voltage: -40V
Drain current: -4.1A
On-state resistance: 169mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -16A
Mounting: SMD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.1A; Idm: -16A; 1W; SOT23
Case: SOT23
Drain-source voltage: -40V
Drain current: -4.1A
On-state resistance: 169mΩ
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: -16A
Mounting: SMD
на замовлення 2126 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
11+ | 41.48 грн |
13+ | 31.52 грн |
45+ | 20.52 грн |
123+ | 19.42 грн |
1000+ | 18.71 грн |
SIHA4N80E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 11A
Power dissipation: 69W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.27Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 11A
Power dissipation: 69W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.27Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHB4N80E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 11A
Power dissipation: 69W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.27Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 11A
Power dissipation: 69W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.27Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHD4N80E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 11A
Power dissipation: 69W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.27Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 11A
Power dissipation: 69W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.27Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHD6N65E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; DPAK,TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
SIHP6N65E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 18A; 78W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 18A
Power dissipation: 78W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRFP9240PBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; 150W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.5A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.5A; 150W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.5A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 44nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 2020 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 211.63 грн |
10+ | 97.47 грн |
13+ | 73.89 грн |
35+ | 69.96 грн |
SF5408-TAP |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; SOD64; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: SOD64
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Leakage current: 50µA
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; Ammo Pack; Ifsm: 150A; SOD64; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: avalanche breakdown effect; glass passivated; ultrafast switching
Kind of package: Ammo Pack
Max. forward impulse current: 150A
Case: SOD64
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Leakage current: 50µA
на замовлення 1706 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 96.50 грн |
10+ | 61.31 грн |
23+ | 40.56 грн |
63+ | 38.36 грн |
500+ | 38.20 грн |
1000+ | 36.87 грн |
GBPC3510W-E4/51 |
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Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1.1V
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 35A; Ifsm: 400A
Type of bridge rectifier: single-phase
Max. off-state voltage: 1kV
Load current: 35A
Max. forward impulse current: 0.4kA
Version: square
Case: GBPC-W
Electrical mounting: THT
Leads: wire Ø 1.1mm
Features of semiconductor devices: glass passivated
Kind of package: bulk
Max. forward voltage: 1.1V
на замовлення 178 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 286.12 грн |
6+ | 166.64 грн |
16+ | 157.21 грн |
100+ | 151.71 грн |
IRFP32N50KPBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 460W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 460W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; 460W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Power dissipation: 460W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 4 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 599.33 грн |
4+ | 278.26 грн |
RW0127674709JLX000 |
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Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; 47Ω; 45W; ±5%; 6.3mm; Ø18.1x76.2mm
Type of resistor: wire-wound
Resistance: 47Ω
Power: 45W
Tolerance: ±5%
Leads: connectors
Body dimensions: Ø18.1x76.2mm
Leads dimensions: 6.3mm
Category: Power resistors
Description: Resistor: wire-wound; 47Ω; 45W; ±5%; 6.3mm; Ø18.1x76.2mm
Type of resistor: wire-wound
Resistance: 47Ω
Power: 45W
Tolerance: ±5%
Leads: connectors
Body dimensions: Ø18.1x76.2mm
Leads dimensions: 6.3mm
на замовлення 4 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 1472.93 грн |
VS-20CTQ150-M3 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220AB; Ufmax: 1V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. load current: 20A
Kind of package: tube
Quantity in set/package: 50pcs.
Capacitance: 280pF
Leakage current: 5mA
Max. forward impulse current: 1030A
Max. forward voltage: 1V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 150V; 10Ax2; TO220AB; Ufmax: 1V
Type of diode: Schottky rectifying
Case: TO220AB
Mounting: THT
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. load current: 20A
Kind of package: tube
Quantity in set/package: 50pcs.
Capacitance: 280pF
Leakage current: 5mA
Max. forward impulse current: 1030A
Max. forward voltage: 1V
на замовлення 47 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 135.20 грн |
9+ | 104.54 грн |
25+ | 99.04 грн |
VS-20CTQ150S-M3 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 150V; 10Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. load current: 20A
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 1030A
Max. forward voltage: 0.66V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 150V; 10Ax2; tube
Type of diode: Schottky rectifying
Case: D2PAK; TO263AB
Mounting: SMD
Max. off-state voltage: 150V
Load current: 10A x2
Semiconductor structure: common cathode; double
Max. load current: 20A
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 1030A
Max. forward voltage: 0.66V
на замовлення 372 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 108.47 грн |
10+ | 95.90 грн |
26+ | 95.11 грн |
50+ | 91.18 грн |
NTCLE100E3222JB0A |
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Виробник: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 2.2kΩ; THT; 3977K; -40÷125°C; ±5%; 500mW
Resistance: 2.2kΩ
Power: 0.5W
Tolerance: ±5%
Type of sensor: NTC thermistor
Material constant B: 3977K
Mounting: THT
Operating temperature: -40...125°C
Category: THT measurement NTC thermistors
Description: NTC thermistor; 2.2kΩ; THT; 3977K; -40÷125°C; ±5%; 500mW
Resistance: 2.2kΩ
Power: 0.5W
Tolerance: ±5%
Type of sensor: NTC thermistor
Material constant B: 3977K
Mounting: THT
Operating temperature: -40...125°C
на замовлення 1000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 32.17 грн |
17+ | 23.90 грн |
43+ | 21.38 грн |
119+ | 20.28 грн |
500+ | 20.20 грн |
1000+ | 19.49 грн |
NTCLE100E3222JB0 |
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Виробник: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 2.2kΩ; THT; 3977K; -40÷125°C; 500mW
Resistance: 2.2kΩ
Power: 0.5W
Type of sensor: NTC thermistor
Material constant B: 3977K
Mounting: THT
Operating temperature: -40...125°C
Category: THT measurement NTC thermistors
Description: NTC thermistor; 2.2kΩ; THT; 3977K; -40÷125°C; 500mW
Resistance: 2.2kΩ
Power: 0.5W
Type of sensor: NTC thermistor
Material constant B: 3977K
Mounting: THT
Operating temperature: -40...125°C
на замовлення 1162 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 45.71 грн |
13+ | 31.91 грн |
25+ | 28.38 грн |
46+ | 20.28 грн |
125+ | 19.18 грн |
NTCLE100E3103JB0A |
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Виробник: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 10kΩ; THT; 3977K; -40÷125°C; ±5%; 500mW
Type of sensor: NTC thermistor
Resistance: 10kΩ
Mounting: THT
Material constant B: 3977K
Operating temperature: -40...125°C
Tolerance: ±5%
Power: 0.5W
Category: THT measurement NTC thermistors
Description: NTC thermistor; 10kΩ; THT; 3977K; -40÷125°C; ±5%; 500mW
Type of sensor: NTC thermistor
Resistance: 10kΩ
Mounting: THT
Material constant B: 3977K
Operating temperature: -40...125°C
Tolerance: ±5%
Power: 0.5W
на замовлення 1603 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 49.10 грн |
14+ | 29.79 грн |
50+ | 26.10 грн |
54+ | 17.21 грн |
148+ | 16.27 грн |
T93YB504KT20 |
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Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 500kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YB
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 500kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YB
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1,5Ncm
на замовлення 397 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 166.76 грн |
10+ | 121.05 грн |
12+ | 81.75 грн |
32+ | 77.03 грн |
T93YB500KT20 |
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Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 50Ω; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 50Ω
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YB
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 50Ω; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 50Ω
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Manufacturer series: T93YB
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard - inch: 3/8"
Temperature coefficient: 100ppm/°C
Terminal pitch: 2.5x2.5mm
Body dimensions: 9.8x9.8x5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1,5Ncm
на замовлення 494 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 121.90 грн |
10+ | 97.47 грн |
16+ | 61.31 грн |
42+ | 58.17 грн |
T93YA504KT20 |
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Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500kΩ; 500mW; THT; ±10%; 3296W
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 500kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Manufacturer series: 3296W
Track material: cermet
Potentiometer standard - inch: 3/8"
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 500kΩ; 500mW; THT; ±10%; 3296W
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 500kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Manufacturer series: 3296W
Track material: cermet
Potentiometer standard - inch: 3/8"
на замовлення 450 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 125.28 грн |
10+ | 96.68 грн |
13+ | 73.89 грн |
35+ | 69.96 грн |
200+ | 67.60 грн |
IRFP350PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 10A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 10A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 262 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 272.58 грн |
9+ | 113.19 грн |
23+ | 107.69 грн |
2N7002E-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.24A; Idm: 1.3A; 0.22W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.24A
Power dissipation: 0.22W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.24A; Idm: 1.3A; 0.22W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.24A
Power dissipation: 0.22W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 0.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 1.3A
на замовлення 2865 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.93 грн |
18+ | 22.40 грн |
25+ | 15.88 грн |
100+ | 11.95 грн |
101+ | 9.20 грн |
277+ | 8.73 грн |
CRCW08051K10JNTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.1kΩ; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 1.1kΩ
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.1kΩ; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 1.1kΩ
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
300+ | 1.61 грн |
500+ | 0.79 грн |
CRCW08051K20FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.2kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1.2kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.2kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1.2kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
на замовлення 35200 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
300+ | 1.74 грн |
800+ | 0.52 грн |
1000+ | 0.42 грн |
5000+ | 0.18 грн |
14000+ | 0.17 грн |
CRCW08051K20JNTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.2kΩ; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 1.2kΩ
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.2kΩ; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 1.2kΩ
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 200 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
200+ | 1.69 грн |
CRCW08051K21FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.21kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 1.21kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.21kΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 1.21kΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 10000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
300+ | 2.01 грн |
500+ | 0.99 грн |
1000+ | 0.61 грн |
4100+ | 0.23 грн |
5000+ | 0.21 грн |
BFC233620684 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 680nF; 630VDC; 310VAC; THT; ±20%; 27.5mm
Terminal pitch: 27.5mm
Tolerance: ±20%
Type of capacitor: polypropylene
Capacitance: 0.68µF
Operating voltage: 310V AC; 630V DC
Body dimensions: 31x9x19mm
Mounting: THT
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 680nF; 630VDC; 310VAC; THT; ±20%; 27.5mm
Terminal pitch: 27.5mm
Tolerance: ±20%
Type of capacitor: polypropylene
Capacitance: 0.68µF
Operating voltage: 310V AC; 630V DC
Body dimensions: 31x9x19mm
Mounting: THT
на замовлення 81 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 143.06 грн |
10+ | 110.83 грн |
11+ | 88.82 грн |
29+ | 84.11 грн |
VS-ETU3006-1-M3 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; IPAK,TO262AA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 20pF
Case: IPAK; TO262AA
Max. forward voltage: 1.35V
Max. forward impulse current: 200A
Leakage current: 0.25mA
Kind of package: tube
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 200A; IPAK,TO262AA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Reverse recovery time: 100ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 20pF
Case: IPAK; TO262AA
Max. forward voltage: 1.35V
Max. forward impulse current: 200A
Leakage current: 0.25mA
Kind of package: tube
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VS-ETU3006STRL-M3 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 100ns; D2PAK,TO263AB; Ifsm: 200A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; TO263AB
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Leakage current: 0.25mA
Max. forward voltage: 1.35V
Capacitance: 20pF
Reverse recovery time: 100ns
Max. forward impulse current: 200A
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 600V; 30A; 100ns; D2PAK,TO263AB; Ifsm: 200A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: D2PAK; TO263AB
Kind of package: 13 inch reel
Quantity in set/package: 800pcs.
Leakage current: 0.25mA
Max. forward voltage: 1.35V
Capacitance: 20pF
Reverse recovery time: 100ns
Max. forward impulse current: 200A
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SMBJ18A-E3/52 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 20V; 20.5A; unidirectional; SMB; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 20V; 20.5A; unidirectional; SMB; 7 inch reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 20.5A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
на замовлення 2004 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
27+ | 16.08 грн |
32+ | 12.58 грн |
100+ | 10.75 грн |
215+ | 4.32 грн |
590+ | 4.09 грн |
1500+ | 4.03 грн |
MBRB20100CT-E3/4W |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 10Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK; TO263AB
Max. forward voltage: 0.8V
Max. forward impulse current: 150A
Kind of package: tube
Quantity in set/package: 50pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK,TO263AB; SMD; 100V; 10Ax2; tube
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: D2PAK; TO263AB
Max. forward voltage: 0.8V
Max. forward impulse current: 150A
Kind of package: tube
Quantity in set/package: 50pcs.
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NTCS0603E3103FLT |
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Виробник: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3435K; ±1%; 125mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 10kΩ
Mounting: SMD
Material constant B: 3435K
Operating temperature: -40...150°C
Tolerance: ±1%
Power: 0.125W
Case - inch: 0603
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3435K; ±1%; 125mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 10kΩ
Mounting: SMD
Material constant B: 3435K
Operating temperature: -40...150°C
Tolerance: ±1%
Power: 0.125W
Case - inch: 0603
на замовлення 4120 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.86 грн |
20+ | 19.89 грн |
50+ | 19.57 грн |
NTCS0603E3103FMT |
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Виробник: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±1%; 125mW; -40÷150°C
Mounting: SMD
Case - inch: 0603
Resistance: 10kΩ
Power: 0.125W
Tolerance: ±1%
Operating temperature: -40...150°C
Type of sensor: NTC thermistor
Material constant B: 3610K
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±1%; 125mW; -40÷150°C
Mounting: SMD
Case - inch: 0603
Resistance: 10kΩ
Power: 0.125W
Tolerance: ±1%
Operating temperature: -40...150°C
Type of sensor: NTC thermistor
Material constant B: 3610K
на замовлення 2694 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 72.80 грн |
10+ | 51.33 грн |
41+ | 22.56 грн |
113+ | 21.30 грн |
NTCS0603E3103GMT |
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Виробник: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±2%; 125mW; -40÷150°C
Mounting: SMD
Case - inch: 0603
Resistance: 10kΩ
Power: 0.125W
Tolerance: ±2%
Operating temperature: -40...150°C
Type of sensor: NTC thermistor
Material constant B: 3610K
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±2%; 125mW; -40÷150°C
Mounting: SMD
Case - inch: 0603
Resistance: 10kΩ
Power: 0.125W
Tolerance: ±2%
Operating temperature: -40...150°C
Type of sensor: NTC thermistor
Material constant B: 3610K
на замовлення 3739 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
7+ | 67.72 грн |
12+ | 34.59 грн |
50+ | 18.47 грн |
137+ | 17.45 грн |
NTCS0603E3103HMT |
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Виробник: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±3%; 125mW; -40÷150°C
Mounting: SMD
Case - inch: 0603
Resistance: 10kΩ
Power: 0.125W
Tolerance: ±3%
Operating temperature: -40...150°C
Type of sensor: NTC thermistor
Material constant B: 3610K
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±3%; 125mW; -40÷150°C
Mounting: SMD
Case - inch: 0603
Resistance: 10kΩ
Power: 0.125W
Tolerance: ±3%
Operating temperature: -40...150°C
Type of sensor: NTC thermistor
Material constant B: 3610K
на замовлення 482 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 48.25 грн |
14+ | 28.30 грн |
50+ | 24.68 грн |
76+ | 12.18 грн |
208+ | 11.55 грн |
NTCS0603E3103JMT |
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Виробник: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±5%; 125mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 10kΩ
Mounting: SMD
Material constant B: 3610K
Operating temperature: -40...150°C
Tolerance: ±5%
Power: 0.125W
Case - inch: 0603
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 10kΩ; SMD; 0603; 3610K; ±5%; 125mW; -40÷150°C
Type of sensor: NTC thermistor
Resistance: 10kΩ
Mounting: SMD
Material constant B: 3610K
Operating temperature: -40...150°C
Tolerance: ±5%
Power: 0.125W
Case - inch: 0603
на замовлення 5393 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.70 грн |
23+ | 17.69 грн |
90+ | 10.38 грн |
246+ | 9.83 грн |
NTCS0603E3104FXT |
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Виробник: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±1%; 125mW; -40÷150°C
Resistance: 100kΩ
Type of sensor: NTC thermistor
Material constant B: 4100K
Case - inch: 0603
Mounting: SMD
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±1%
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±1%; 125mW; -40÷150°C
Resistance: 100kΩ
Type of sensor: NTC thermistor
Material constant B: 4100K
Case - inch: 0603
Mounting: SMD
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±1%
на замовлення 975 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 79.57 грн |
10+ | 52.59 грн |
43+ | 21.69 грн |
117+ | 20.52 грн |
NTCS0603E3104GXT |
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Виробник: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±2%; 125mW; -40÷150°C
Resistance: 100kΩ
Type of sensor: NTC thermistor
Material constant B: 4100K
Case - inch: 0603
Mounting: SMD
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±2%
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±2%; 125mW; -40÷150°C
Resistance: 100kΩ
Type of sensor: NTC thermistor
Material constant B: 4100K
Case - inch: 0603
Mounting: SMD
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±2%
на замовлення 891 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 34.71 грн |
15+ | 27.83 грн |
52+ | 17.76 грн |
143+ | 16.74 грн |
NTCS0603E3104HXT |
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Виробник: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±3%; 125mW; -40÷150°C
Power: 0.125W
Resistance: 100kΩ
Tolerance: ±3%
Type of sensor: NTC thermistor
Material constant B: 4100K
Case - inch: 0603
Mounting: SMD
Operating temperature: -40...150°C
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±3%; 125mW; -40÷150°C
Power: 0.125W
Resistance: 100kΩ
Tolerance: ±3%
Type of sensor: NTC thermistor
Material constant B: 4100K
Case - inch: 0603
Mounting: SMD
Operating temperature: -40...150°C
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NTCS0603E3104JXT |
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Виробник: VISHAY
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±5%; 125mW; -40÷150°C
Resistance: 100kΩ
Type of sensor: NTC thermistor
Material constant B: 4100K
Case - inch: 0603
Mounting: SMD
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±5%
Category: SMD measurement NTC thermistors
Description: NTC thermistor; 100kΩ; SMD; 0603; 4100K; ±5%; 125mW; -40÷150°C
Resistance: 100kΩ
Type of sensor: NTC thermistor
Material constant B: 4100K
Case - inch: 0603
Mounting: SMD
Operating temperature: -40...150°C
Power: 0.125W
Tolerance: ±5%
на замовлення 7732 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
16+ | 27.93 грн |
24+ | 16.98 грн |
50+ | 14.62 грн |
89+ | 10.38 грн |
245+ | 9.75 грн |
ES3D-E3/57T |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 50ns; DO214AB,SMC; Ufmax: 0.9V
Capacitance: 45pF
Mounting: SMD
Case: DO214AB; SMC
Max. off-state voltage: 200V
Max. forward voltage: 0.9V
Load current: 3A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 100A
Leakage current: 0.5mA
Kind of package: 7 inch reel
Type of diode: rectifying
Quantity in set/package: 850pcs.
Features of semiconductor devices: glass passivated; ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 3A; 50ns; DO214AB,SMC; Ufmax: 0.9V
Capacitance: 45pF
Mounting: SMD
Case: DO214AB; SMC
Max. off-state voltage: 200V
Max. forward voltage: 0.9V
Load current: 3A
Semiconductor structure: single diode
Reverse recovery time: 50ns
Max. forward impulse current: 100A
Leakage current: 0.5mA
Kind of package: 7 inch reel
Type of diode: rectifying
Quantity in set/package: 850pcs.
Features of semiconductor devices: glass passivated; ultrafast switching
на замовлення 1960 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
9+ | 48.25 грн |
14+ | 29.16 грн |
85+ | 10.93 грн |
234+ | 10.30 грн |
SIHG25N60EFL-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 61A; 250W; TO247AC
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Gate charge: 75nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 61A
Mounting: THT
Case: TO247AC
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 146mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 61A; 250W; TO247AC
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: tube
Gate charge: 75nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 61A
Mounting: THT
Case: TO247AC
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 146mΩ
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SIHG125N60EF-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 179W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
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SIHG47N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 357W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 357W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; 357W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 357W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 64mΩ
Mounting: THT
Gate charge: 0.22µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 240 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 868.52 грн |
2+ | 556.52 грн |
5+ | 525.87 грн |
SMBJ12A-E3/52 |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 13.3V; 30.2A; unidirectional; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 13.3V; 30.2A; unidirectional; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
на замовлення 2184 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
18+ | 23.70 грн |
22+ | 17.92 грн |
31+ | 12.89 грн |
100+ | 10.22 грн |
158+ | 5.82 грн |
434+ | 5.50 грн |
1500+ | 5.42 грн |
IRFR120PBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 31A
Drain-source voltage: 100V
Drain current: 4.9A
On-state resistance: 0.27Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: tube
Type of transistor: N-MOSFET
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 16nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 31A
Drain-source voltage: 100V
Drain current: 4.9A
On-state resistance: 0.27Ω
на замовлення 919 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 60.10 грн |
10+ | 40.56 грн |
41+ | 22.72 грн |
112+ | 21.46 грн |
BP104 |
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Виробник: VISHAY
Category: Photodiodes
Description: PIN IR photodiode; DIL; THT; 950nm; 130°
Type of photoelement: PIN IR photodiode
Case: DIL
Mounting: THT
Wavelength of peak sensitivity: 950nm
Viewing angle: 130°
Active area: 7.5mm2
Photoreceiver features: fitted with IR filter
Category: Photodiodes
Description: PIN IR photodiode; DIL; THT; 950nm; 130°
Type of photoelement: PIN IR photodiode
Case: DIL
Mounting: THT
Wavelength of peak sensitivity: 950nm
Viewing angle: 130°
Active area: 7.5mm2
Photoreceiver features: fitted with IR filter
на замовлення 3436 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 56.72 грн |
12+ | 33.96 грн |
35+ | 26.88 грн |
95+ | 25.39 грн |
3000+ | 24.45 грн |
VBP104FAS |
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Виробник: VISHAY
Category: Photodiodes
Description: PIN IR photodiode; SMD; 950nm; 780÷1050nm; 65°; 65mW
Type of photoelement: PIN IR photodiode
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 780...1050nm
Viewing angle: 65°
Active area: 4.4mm2
Dimensions: 6.4x3.9x1.2mm
Radiant power: 65mW
Category: Photodiodes
Description: PIN IR photodiode; SMD; 950nm; 780÷1050nm; 65°; 65mW
Type of photoelement: PIN IR photodiode
Mounting: SMD
Wavelength of peak sensitivity: 950nm
Wavelength: 780...1050nm
Viewing angle: 65°
Active area: 4.4mm2
Dimensions: 6.4x3.9x1.2mm
Radiant power: 65mW
на замовлення 383 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 81.27 грн |
10+ | 54.55 грн |
44+ | 20.99 грн |
121+ | 19.81 грн |
TSMF1000 |
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Виробник: VISHAY
Category: IR LEDs
Description: IR transmitter; 890nm; transparent; 35mW; 17°; 1.3÷1.5VDC; SMD
Type of diode: IR transmitter
Wavelength: 890nm
Viewing angle: 17°
Operating voltage: 1.3...1.5V DC
Mounting: SMD
Dimensions: 2.5x2x2.7mm
LED current: 100mA
LED version: reverse mount
LED lens: transparent
Radiant power: 35mW
Category: IR LEDs
Description: IR transmitter; 890nm; transparent; 35mW; 17°; 1.3÷1.5VDC; SMD
Type of diode: IR transmitter
Wavelength: 890nm
Viewing angle: 17°
Operating voltage: 1.3...1.5V DC
Mounting: SMD
Dimensions: 2.5x2x2.7mm
LED current: 100mA
LED version: reverse mount
LED lens: transparent
Radiant power: 35mW
на замовлення 46 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 71.11 грн |
10+ | 48.18 грн |
BZX85C24-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 24V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 24V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 24V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 24V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 8074 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 15.24 грн |
42+ | 9.43 грн |
66+ | 5.96 грн |
100+ | 5.19 грн |
290+ | 3.18 грн |
796+ | 3.01 грн |
PTS120601B1K00PU00 |
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Виробник: VISHAY
Category: Temp. Sensors - Resistance Thermometers
Description: Sensor: temperature; Pt1000; 1000Ω; cl.B 0,3 %; 1206; SMD; bulk
Type of sensor: temperature
Kind of temperature sensor: Pt1000
Resistance: 1kΩ
Tolerance: cl.B 0,3 %
Case: 1206
Body dimensions: 0.55x3.2x1.6mm
Mounting: SMD
Temperature coefficient: 3850ppm/°C
Operating temperature: -55...155°C
Kind of package: bulk
T dimension: 0.5mm
Category: Temp. Sensors - Resistance Thermometers
Description: Sensor: temperature; Pt1000; 1000Ω; cl.B 0,3 %; 1206; SMD; bulk
Type of sensor: temperature
Kind of temperature sensor: Pt1000
Resistance: 1kΩ
Tolerance: cl.B 0,3 %
Case: 1206
Body dimensions: 0.55x3.2x1.6mm
Mounting: SMD
Temperature coefficient: 3850ppm/°C
Operating temperature: -55...155°C
Kind of package: bulk
T dimension: 0.5mm
на замовлення 30 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
1+ | 573.09 грн |
3+ | 321.49 грн |
8+ | 304.20 грн |
DG2502DB-T2-GE1 |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; WCSP16; 1.8÷5.5V; reel,tape
Type of integrated circuit: analog switch
Number of channels: 4
Kind of package: reel; tape
Output configuration: SPST-NO
Mounting: SMD
Case: WCSP16
Resistance: 250Ω
Supply voltage: 1.8...5.5V
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO; Ch: 4; WCSP16; 1.8÷5.5V; reel,tape
Type of integrated circuit: analog switch
Number of channels: 4
Kind of package: reel; tape
Output configuration: SPST-NO
Mounting: SMD
Case: WCSP16
Resistance: 250Ω
Supply voltage: 1.8...5.5V
товару немає в наявності
В кошику
од. на суму грн.
DG2503DB-T2-GE1 |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO/NC; Ch: 4; WCSP16; 1.8÷5.5V; reel,tape
Type of integrated circuit: analog switch
Number of channels: 4
Kind of package: reel; tape
Output configuration: SPST-NO/NC
Mounting: SMD
Case: WCSP16
Resistance: 250Ω
Supply voltage: 1.8...5.5V
Category: Analog multiplexers and switches
Description: IC: analog switch; SPST-NO/NC; Ch: 4; WCSP16; 1.8÷5.5V; reel,tape
Type of integrated circuit: analog switch
Number of channels: 4
Kind of package: reel; tape
Output configuration: SPST-NO/NC
Mounting: SMD
Case: WCSP16
Resistance: 250Ω
Supply voltage: 1.8...5.5V
товару немає в наявності
В кошику
од. на суму грн.
SMBJ30CA-E3/52 |
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Виробник: VISHAY
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3V; 12.4A; bidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 33.3V; 12.4A; bidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3V
Max. forward impulse current: 12.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
на замовлення 2470 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
17+ | 26.24 грн |
22+ | 18.71 грн |
50+ | 13.36 грн |
100+ | 11.24 грн |
202+ | 4.56 грн |
556+ | 4.32 грн |