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VS-86HFR100 VS-86HFR100 Vishay General Semiconductor - Diodes Division 85HF(R)_Series.pdf Description: DIODE GP REV 1KV 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 1000 V
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VS-86HFR10 VS-86HFR10 Vishay General Semiconductor - Diodes Division 85HF(R)_Series.pdf Description: DIODE GP REV 100V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 100 V
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VS-86HFR120 VS-86HFR120 Vishay General Semiconductor - Diodes Division 85HF%28R%29_Series.pdf Description: DIODE STD REV 1200V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 1200 V
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VS-86HFR160 VS-86HFR160 Vishay General Semiconductor - Diodes Division 85HF(R)_Series.pdf Description: DIODE GP REV 1.6KV 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
Current - Reverse Leakage @ Vr: 4.5 mA @ 1600 V
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VS-86HFR20 VS-86HFR20 Vishay General Semiconductor - Diodes Division 85HF(R)_Series.pdf Description: DIODE GP REV 200V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 200 V
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VS-86HFR40 VS-86HFR40 Vishay General Semiconductor - Diodes Division 85HF(R)_Series.pdf Description: DIODE GP REV 400V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 400 V
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VS-86HFR60 VS-86HFR60 Vishay General Semiconductor - Diodes Division 85HF(R)_Series.pdf Description: DIODE GP REV 600V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 600 V
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VS-86HFR80 VS-86HFR80 Vishay General Semiconductor - Diodes Division 85HF(R)_Series.pdf Description: DIODE GP REV 800V 8A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 800 V
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VS-8AF2NPP VS-8AF2NPP Vishay General Semiconductor - Diodes Division 8AF.pdf Description: DIODE GEN PURP 200V 50A B47
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VS-8AF4RPP VS-8AF4RPP Vishay General Semiconductor - Diodes Division 8AF.pdf Description: DIODE GEN PURP REV 400V 50A B-47
Packaging: Bulk
Package / Case: B-47
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 50A
Supplier Device Package: B-47
Operating Temperature - Junction: -65°C ~ 195°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 5 mA @ 400 V
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8EWF02STRL 8EWF02STRL Vishay General Semiconductor - Diodes Division 8EWF..S.pdf Description: DIODE STANDARD 200V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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8EWF02STR 8EWF02STR Vishay General Semiconductor - Diodes Division 8EWF..S.pdf Description: DIODE STANDARD 200V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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8EWF04STRL 8EWF04STRL Vishay General Semiconductor - Diodes Division 8EWF..S.pdf Description: DIODE GEN PURP 400V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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8EWF04STRR 8EWF04STRR Vishay General Semiconductor - Diodes Division 8EWF..S.pdf Description: DIODE GEN PURP 400V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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8EWF06STR 8EWF06STR Vishay General Semiconductor - Diodes Division 8EWF..S.pdf Description: DIODE GEN PURP 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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8EWF06STRR 8EWF06STRR Vishay General Semiconductor - Diodes Division 8EWF..S.pdf Description: DIODE GEN PURP 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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8EWF10STRL 8EWF10STRL Vishay General Semiconductor - Diodes Division 8EWF..S,%201000%20to%201200V.pdf Description: DIODE GEN PURP 1KV 8A DPAK
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8EWF12STR 8EWF12STR Vishay General Semiconductor - Diodes Division 8EWF..S%2C%201000%20to%201200V.pdf Description: DIODE GEN PURP 1.2KV 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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8EWS08STRL 8EWS08STRL Vishay General Semiconductor - Diodes Division 8EWSxxS.pdf Description: DIODE STANDARD 800V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
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8EWS08STR 8EWS08STR Vishay General Semiconductor - Diodes Division 8EWSxxS.pdf Description: DIODE STANDARD 800V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
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8EWS10S 8EWS10S Vishay General Semiconductor - Diodes Division 8EWSxxS.pdf Description: DIODE GEN PURP 1KV 8A DPAK
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8EWS10STRL 8EWS10STRL Vishay General Semiconductor - Diodes Division 8EWSxxS.pdf Description: DIODE GEN PURP 1KV 8A DPAK
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8EWS12STRL 8EWS12STRL Vishay General Semiconductor - Diodes Division 8EWSxxS.pdf Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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8TQ080STRL 8TQ080STRL Vishay General Semiconductor - Diodes Division 8TQ.pdf Description: DIODE SCHOTTKY 80V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
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8TQ080STRR 8TQ080STRR Vishay General Semiconductor - Diodes Division 8TQ.pdf Description: DIODE SCHOTTKY 80V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
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8TQ100STRL 8TQ100STRL Vishay General Semiconductor - Diodes Division 8TQ.pdf Description: DIODE SCHOTTKY 100V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
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VS-90SQ030 VS-90SQ030 Vishay General Semiconductor - Diodes Division VS-90SQ%28M3%29.pdf Description: DIODE SCHOTTKY 30V 9A DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 9A
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 9 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
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VS-90SQ030TR VS-90SQ030TR Vishay General Semiconductor - Diodes Division VS-90SQ%28M3%29.pdf Description: DIODE SCHOTTKY 30V 9A DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 9A
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 9 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
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VS-90SQ035TR VS-90SQ035TR Vishay General Semiconductor - Diodes Division VS-90SQ(M3).pdf Description: DIODE SCHOTTKY 35V 9A DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 9A
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 9 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 35 V
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VS-90SQ040TR VS-90SQ040TR Vishay General Semiconductor - Diodes Division VS-90SQ%28M3%29.pdf Description: DIODE SCHOTTKY 40V 9A DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 9A
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 9 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
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92MT120KB Vishay General Semiconductor - Diodes Division MT,KB%20Series55,90,110A.pdf Description: BRIDGE RECT 3PHASE 1.2KV 90A MTK
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VS-GBPC2506W VS-GBPC2506W Vishay General Semiconductor - Diodes Division vs-gbpc25.pdf Description: BRIDGE RECT 1P 600V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
на замовлення 80 шт:
термін постачання 21-31 дні (днів)
1+510.91 грн
10+348.38 грн
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VS-GBPC2504W VS-GBPC2504W Vishay General Semiconductor - Diodes Division vs-gbpc25.pdf Description: BRIDGE RECT 1P 400V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
на замовлення 399 шт:
термін постачання 21-31 дні (днів)
1+521.26 грн
10+355.50 грн
25+315.36 грн
100+252.36 грн
300+234.92 грн
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VS-GBPC2510W Vishay General Semiconductor - Diodes Division vs-gbpc25.pdf Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 1 V
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VS-GBPC3504W VS-GBPC3504W Vishay General Semiconductor - Diodes Division vs-gbpc25.pdf Description: BRIDGE RECT 1P 400V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
на замовлення 195 шт:
термін постачання 21-31 дні (днів)
1+603.22 грн
10+395.58 грн
100+290.72 грн
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VS-GBPC3506W Vishay General Semiconductor - Diodes Division vs-gbpc25.pdf Description: BRIDGE RECT 1P 600V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
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VS-GBPC3508W VS-GBPC3508W Vishay General Semiconductor - Diodes Division vs-gbpc25.pdf Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 800 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+562.64 грн
10+384.70 грн
25+341.79 грн
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VS-GBPC3510W VS-GBPC3510W Vishay General Semiconductor - Diodes Division vs-gbpc25.pdf Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1 V
на замовлення 83 шт:
термін постачання 21-31 дні (днів)
1+640.63 грн
10+393.97 грн
В кошику  од. на суму  грн.
VS-GBPC3512W VS-GBPC3512W Vishay General Semiconductor - Diodes Division vs-gbpc25.pdf Description: BRIDGE RECT 1P 1.2KV 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1.2 V
на замовлення 1233 шт:
термін постачання 21-31 дні (днів)
1+650.18 грн
10+428.00 грн
100+360.43 грн
500+302.87 грн
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HFA04TB60STRL HFA04TB60STRL Vishay General Semiconductor - Diodes Division HFA04TB60S.pdf Description: DIODE STANDARD 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
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HFA04TB60STRR HFA04TB60STRR Vishay General Semiconductor - Diodes Division HFA04TB60S.pdf Description: DIODE STANDARD 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
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HFA06TB120STRL HFA06TB120STRL Vishay General Semiconductor - Diodes Division HFA06TB120S.pdf Description: DIODE GEN PURP 1.2KV 6A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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HFA06TB120STRR HFA06TB120STRR Vishay General Semiconductor - Diodes Division HFA06TB120S.pdf Description: DIODE GEN PURP 1.2KV 6A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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HFA08TA60CSTRL HFA08TA60CSTRL Vishay General Semiconductor - Diodes Division HFA08TA60CS.pdf Description: DIODE ARRAY GP 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
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HFA08TB120STRL HFA08TB120STRL Vishay General Semiconductor - Diodes Division HFA08TB120S.pdf Description: DIODE STANDARD 1200V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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HFA08TB120STRR HFA08TB120STRR Vishay General Semiconductor - Diodes Division HFA08TB120S.pdf Description: DIODE GEN PURP 1.2KV 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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HFA08TB60STRR HFA08TB60STRR Vishay General Semiconductor - Diodes Division HFA08TB60S.pdf Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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HFA12PA120C HFA12PA120C Vishay General Semiconductor - Diodes Division HFA12PA120C.pdf Description: DIODE ARRAY GP 1200V 6A TO247AC
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HFA15TB60STRL HFA15TB60STRL Vishay General Semiconductor - Diodes Division HFA15TB60S.pdf Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 15
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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HFA16TA60CSTRL HFA16TA60CSTRL Vishay General Semiconductor - Diodes Division HFA16TA60CS.pdf Description: DIODE ARRAY GP 600V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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HFA16TA60CSTRR HFA16TA60CSTRR Vishay General Semiconductor - Diodes Division HFA16TA60CS.pdf Description: DIODE ARRAY GP 600V 8AD2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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HFA16TB120S HFA16TB120S Vishay General Semiconductor - Diodes Division HFA16TB120S.pdf Description: DIODE STANDARD 1200V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 16 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
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HFA16TB120STRL HFA16TB120STRL Vishay General Semiconductor - Diodes Division HFA16TB120S.pdf Description: DIODE GEN PURP 1.2KV 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 16 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
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HFA16TB120STRR HFA16TB120STRR Vishay General Semiconductor - Diodes Division HFA16TB120S.pdf Description: DIODE GEN PURP 1.2KV 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 16 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
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HFA25TB60STRL HFA25TB60STRL Vishay General Semiconductor - Diodes Division HFA25TB60S%20Series.pdf Description: DIODE STANDARD 600V 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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HFA30TA60CSTRL HFA30TA60CSTRL Vishay General Semiconductor - Diodes Division HFA30TA60CS.pdf Description: DIODE ARRAY GP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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HFA30TA60CSTRR HFA30TA60CSTRR Vishay General Semiconductor - Diodes Division HFA30TA60CS.pdf Description: DIODE ARRAY GP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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VSD3913R VSD3913R Vishay General Semiconductor - Diodes Division IRD3899,IRD3909%20Series.pdf Description: DIODE GEN PURP 400V 30A DO203AB
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IRKH57/08A Vishay General Semiconductor - Diodes Division irk.41,.56.pdf Description: SCR MOD PWR 800V 55A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 2)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1310A, 1370A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 135 A
Voltage - Off State: 800 V
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VSKHF180-12HK VSKHF180-12HK Vishay General Semiconductor - Diodes Division VSKxF180xxP_Series.pdf Description: SCR MOD PWR 1200V 180A MAGNAPAK
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VS-86HFR100 85HF(R)_Series.pdf
VS-86HFR100
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 1KV 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 1000 V
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VS-86HFR10 85HF(R)_Series.pdf
VS-86HFR10
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 100V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 100 V
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VS-86HFR120 85HF%28R%29_Series.pdf
VS-86HFR120
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD REV 1200V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 1200 V
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VS-86HFR160 85HF(R)_Series.pdf
VS-86HFR160
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 1.6KV 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 267 A
Current - Reverse Leakage @ Vr: 4.5 mA @ 1600 V
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VS-86HFR20 85HF(R)_Series.pdf
VS-86HFR20
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 200V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 200 V
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VS-86HFR40 85HF(R)_Series.pdf
VS-86HFR40
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 400V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 400 V
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VS-86HFR60 85HF(R)_Series.pdf
VS-86HFR60
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 600V 85A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 85A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 600 V
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VS-86HFR80 85HF(R)_Series.pdf
VS-86HFR80
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP REV 800V 8A DO203AB
Packaging: Bulk
Package / Case: DO-203AB, DO-5, Stud
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 8A
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 267 A
Current - Reverse Leakage @ Vr: 9 mA @ 800 V
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VS-8AF2NPP 8AF.pdf
VS-8AF2NPP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 50A B47
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VS-8AF4RPP 8AF.pdf
VS-8AF4RPP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP REV 400V 50A B-47
Packaging: Bulk
Package / Case: B-47
Mounting Type: Chassis, Stud Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard, Reverse Polarity
Current - Average Rectified (Io): 50A
Supplier Device Package: B-47
Operating Temperature - Junction: -65°C ~ 195°C
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Reverse Leakage @ Vr: 5 mA @ 400 V
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8EWF02STRL 8EWF..S.pdf
8EWF02STRL
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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8EWF02STR 8EWF..S.pdf
8EWF02STR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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8EWF04STRL 8EWF..S.pdf
8EWF04STRL
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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8EWF04STRR 8EWF..S.pdf
8EWF04STRR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
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8EWF06STR 8EWF..S.pdf
8EWF06STR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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8EWF06STRR 8EWF..S.pdf
8EWF06STRR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: D-PAK (TO-252AA)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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8EWF10STRL 8EWF..S,%201000%20to%201200V.pdf
8EWF10STRL
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A DPAK
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8EWF12STR 8EWF..S%2C%201000%20to%201200V.pdf
8EWF12STR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 270 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
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8EWS08STRL 8EWSxxS.pdf
8EWS08STRL
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
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8EWS08STR 8EWSxxS.pdf
8EWS08STR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 800 V
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8EWS10S 8EWSxxS.pdf
8EWS10S
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A DPAK
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8EWS10STRL 8EWSxxS.pdf
8EWS10STRL
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 8A DPAK
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8EWS12STRL 8EWSxxS.pdf
8EWS12STRL
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
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8TQ080STRL 8TQ.pdf
8TQ080STRL
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
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8TQ080STRR 8TQ.pdf
8TQ080STRR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 80V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 80 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 8
Voltage Coupled to Current - Reverse Leakage @ Vr: 80
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8TQ100STRL 8TQ.pdf
8TQ100STRL
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
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VS-90SQ030 VS-90SQ%28M3%29.pdf
VS-90SQ030
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 9A DO204AR
Packaging: Bulk
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 9A
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 9 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
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VS-90SQ030TR VS-90SQ%28M3%29.pdf
VS-90SQ030TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 30V 9A DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 9A
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 9 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
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VS-90SQ035TR VS-90SQ(M3).pdf
VS-90SQ035TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 9A DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 9A
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 9 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 35 V
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VS-90SQ040TR VS-90SQ%28M3%29.pdf
VS-90SQ040TR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 9A DO204AR
Packaging: Tape & Reel (TR)
Package / Case: DO-204AR, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 9A
Supplier Device Package: DO-204AR
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 9 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 40 V
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92MT120KB MT,KB%20Series55,90,110A.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 3PHASE 1.2KV 90A MTK
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VS-GBPC2506W vs-gbpc25.pdf
VS-GBPC2506W
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
на замовлення 80 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+510.91 грн
10+348.38 грн
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VS-GBPC2504W vs-gbpc25.pdf
VS-GBPC2504W
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 25 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
на замовлення 399 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+521.26 грн
10+355.50 грн
25+315.36 грн
100+252.36 грн
300+234.92 грн
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VS-GBPC2510W vs-gbpc25.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 1 V
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VS-GBPC3504W vs-gbpc25.pdf
VS-GBPC3504W
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 400V 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 2 mA @ 400 V
на замовлення 195 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+603.22 грн
10+395.58 грн
100+290.72 грн
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VS-GBPC3506W vs-gbpc25.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 600 V
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VS-GBPC3508W vs-gbpc25.pdf
VS-GBPC3508W
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 800V 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 800 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+562.64 грн
10+384.70 грн
25+341.79 грн
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VS-GBPC3510W vs-gbpc25.pdf
VS-GBPC3510W
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1KV 35A GBPC-W
Packaging: Tray
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1 V
на замовлення 83 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+640.63 грн
10+393.97 грн
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VS-GBPC3512W vs-gbpc25.pdf
VS-GBPC3512W
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 1.2KV 35A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 35 A
Current - Reverse Leakage @ Vr: 2 mA @ 1.2 V
на замовлення 1233 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+650.18 грн
10+428.00 грн
100+360.43 грн
500+302.87 грн
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HFA04TB60STRL HFA04TB60S.pdf
HFA04TB60STRL
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
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HFA04TB60STRR HFA04TB60S.pdf
HFA04TB60STRR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
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HFA06TB120STRL HFA06TB120S.pdf
HFA06TB120STRL
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 6A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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HFA06TB120STRR HFA06TB120S.pdf
HFA06TB120STRR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 6A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 80 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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HFA08TA60CSTRL HFA08TA60CS.pdf
HFA08TA60CSTRL
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 4A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 42 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 4A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
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HFA08TB120STRL HFA08TB120S.pdf
HFA08TB120STRL
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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HFA08TB120STRR HFA08TB120S.pdf
HFA08TB120STRR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
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HFA08TB60STRR HFA08TB60S.pdf
HFA08TB60STRR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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HFA12PA120C HFA12PA120C.pdf
HFA12PA120C
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 1200V 6A TO247AC
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HFA15TB60STRL HFA15TB60S.pdf
HFA15TB60STRL
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 15
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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HFA16TA60CSTRL HFA16TA60CS.pdf
HFA16TA60CSTRL
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 8A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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HFA16TA60CSTRR HFA16TA60CS.pdf
HFA16TA60CSTRR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 8AD2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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HFA16TB120S HFA16TB120S.pdf
HFA16TB120S
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 16 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
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HFA16TB120STRL HFA16TB120S.pdf
HFA16TB120STRL
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 16 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
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HFA16TB120STRR HFA16TB120S.pdf
HFA16TB120STRR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135 ns
Technology: Standard
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 16 A
Current - Reverse Leakage @ Vr: 20 µA @ 1200 V
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HFA25TB60STRL HFA25TB60S%20Series.pdf
HFA25TB60STRL
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
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HFA30TA60CSTRL HFA30TA60CS.pdf
HFA30TA60CSTRL
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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HFA30TA60CSTRR HFA30TA60CS.pdf
HFA30TA60CSTRR
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 15A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A (DC)
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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VSD3913R IRD3899,IRD3909%20Series.pdf
VSD3913R
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 30A DO203AB
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IRKH57/08A irk.41,.56.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR MOD PWR 800V 55A ADD-A-PAK
Packaging: Bulk
Package / Case: ADD-A-PAK (3 + 2)
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Series Connection - SCR/Diode
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1310A, 1370A
Number of SCRs, Diodes: 1 SCR, 1 Diode
Current - On State (It (AV)) (Max): 60 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Part Status: Obsolete
Current - On State (It (RMS)) (Max): 135 A
Voltage - Off State: 800 V
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VSKHF180-12HK VSKxF180xxP_Series.pdf
VSKHF180-12HK
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR MOD PWR 1200V 180A MAGNAPAK
товару немає в наявності
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