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LL4151-GS18 LL4151-GS18 Vishay General Semiconductor - Diodes Division ll4151.pdf Description: DIODE STANDARD 50V 300MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+1.41 грн
Мінімальне замовлення: 10000
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LL4151-M-18 LL4151-M-18 Vishay General Semiconductor - Diodes Division ll4151-m.pdf Description: DIODE GEN PURP 50V 300MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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LL42-GS18 LL42-GS18 Vishay General Semiconductor - Diodes Division ll42.pdf Description: DIODE SCHOT 30V 200MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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LL43-GS18 LL43-GS18 Vishay General Semiconductor - Diodes Division ll42.pdf Description: DIODE SCHOT 30V 200MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 15 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+5.33 грн
Мінімальне замовлення: 10000
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LL4448-GS18 LL4448-GS18 Vishay General Semiconductor - Diodes Division ll4148.pdf Description: DIODE STANDARD 75V 300MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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LL46-GS18 LL46-GS18 Vishay General Semiconductor - Diodes Division ll46.pdf Description: DIODE SCHOT 100V 150MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 250 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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LS101A-GS18 LS101A-GS18 Vishay General Semiconductor - Diodes Division ls101a.pdf Description: DIODE SCHOTTKY 60V 30MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Qualification: AEC-Q101
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LS101B-GS18 LS101B-GS18 Vishay General Semiconductor - Diodes Division ls101a.pdf Description: DIODE SCHOTTKY 50V 30MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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MB3035S-E3/8W MB3035S-E3/8W Vishay General Semiconductor - Diodes Division M30x5S%2CMB30x5S%2CMI30x5S.pdf Description: DIODE SCHOTTKY 35V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 980pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
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MBL106S-M3/I MBL106S-M3/I Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 600V 1A 4SMD
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MBRB10100CT-M3/8W MBRB10100CT-M3/8W Vishay General Semiconductor - Diodes Division mbr10100-m3.pdf Description: DIODE ARR SCHOTT 90V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBRB10100-M3/8W MBRB10100-M3/8W Vishay General Semiconductor - Diodes Division mbr10100-m3.pdf Description: DIODE SCHOTTKY 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBRB10H35-E3/81 MBRB10H35-E3/81 Vishay General Semiconductor - Diodes Division MBR(F,B)10Hxx.pdf Description: DIODE SCHOTTKY 35V 10A TO263AB
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MBRB20100CT-M3/8W MBRB20100CT-M3/8W Vishay General Semiconductor - Diodes Division mbrb20090ct-m3.pdf Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBRB25H50CTHE3/81 MBRB25H50CTHE3/81 Vishay General Semiconductor - Diodes Division MBR(F,B)25HxxCT_Rev_6-12-13.pdf Description: DIODE ARRAY SCHOTTKY 50V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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MCL103A-TR3 MCL103A-TR3 Vishay General Semiconductor - Diodes Division mcl103a.pdf Description: DIODE SCHOTT 40V 200MA MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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MCL4151-TR3 MCL4151-TR3 Vishay General Semiconductor - Diodes Division mcl4151.pdf Description: DIODE STD 75V 200MA MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Qualification: AEC-Q101
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MCL4448-TR3 MCL4448-TR3 Vishay General Semiconductor - Diodes Division mlc4148.pdf Description: DIODE GP 75V 150MA MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17773 шт:
термін постачання 21-31 дні (днів)
10000+2.17 грн
Мінімальне замовлення: 10000
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MMBD6050-E3-18 MMBD6050-E3-18 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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MMBD6050-G3-18 MMBD6050-G3-18 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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MMBD6050-HE3-18 MMBD6050-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
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MMBD914-E3-18 MMBD914-E3-18 Vishay General Semiconductor - Diodes Division mmbd914.pdf Description: DIODE STANDARD 100V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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MMBD914-HE3-18 MMBD914-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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MMBZ27VDA-E3-18 MMBZ27VDA-E3-18 Vishay General Semiconductor - Diodes Division mmbz27vd.pdf Description: DIODE ZENER 27V 225MW SOT23
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MMBZ27VDA-G3-18 MMBZ27VDA-G3-18 Vishay General Semiconductor - Diodes Division mmbz27vdag.pdf Description: DIODE ZENER 27V 225MW SOT23
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MMBZ4624-G3-18 MMBZ4624-G3-18 Vishay General Semiconductor - Diodes Division mmbz4617g.pdf Description: DIODE ZENER 4.7V 350MW SOT23-3
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MMBZ4624-HE3-18 MMBZ4624-HE3-18 Vishay General Semiconductor - Diodes Division mmbz4617.pdf Description: DIODE ZENER 4.7V 350MW SOT23-3
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MMBZ4699-E3-18 MMBZ4699-E3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 12V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
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MMBZ4699-G3-18 MMBZ4699-G3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 12V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
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MMBZ4699-HE3-18 MMBZ4699-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 12V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: AEC-Q101
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MMBZ4701-E3-18 MMBZ4701-E3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 14V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.6 V
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MMBZ4701-G3-18 MMBZ4701-G3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 14V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.6 V
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MMBZ4701-HE3-18 MMBZ4701-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 14V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.6 V
Qualification: AEC-Q101
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MMBZ5225B-E3-18 MMBZ5225B-E3-18 Vishay General Semiconductor - Diodes Division mmbz5225.pdf Description: DIODE ZENER 3V 225MW SOT23-3
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MMBZ5225B-G3-18 MMBZ5225B-G3-18 Vishay General Semiconductor - Diodes Division mmbz5225g.pdf Description: DIODE ZENER 3V 225MW SOT23-3
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MMBZ5225B-HE3-18 MMBZ5225B-HE3-18 Vishay General Semiconductor - Diodes Division mmbz5225.pdf Description: DIODE ZENER 3V 225MW SOT23-3
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MMBZ5225C-E3-18 MMBZ5225C-E3-18 Vishay General Semiconductor - Diodes Division mmbz5225.pdf Description: DIODE ZENER 3V 225MW SOT23-3
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MMBZ5225C-G3-18 MMBZ5225C-G3-18 Vishay General Semiconductor - Diodes Division mmbz5225g.pdf Description: DIODE ZENER 3V 225MW SOT23-3
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MMBZ5225C-HE3-18 MMBZ5225C-HE3-18 Vishay General Semiconductor - Diodes Division mmbz5225.pdf Description: DIODE ZENER 3V 225MW SOT23-3
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MMBZ5226B-E3-18 MMBZ5226B-E3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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MMBZ5226B-G3-18 MMBZ5226B-G3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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MMBZ5226B-HE3-18 MMBZ5226B-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Qualification: AEC-Q101
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MMBZ5226C-E3-18 MMBZ5226C-E3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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MMBZ5226C-G3-18 MMBZ5226C-G3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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MMBZ5226C-HE3-18 MMBZ5226C-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Qualification: AEC-Q101
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MMBZ5227B-E3-18 MMBZ5227B-E3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
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MMBZ5227B-G3-18 MMBZ5227B-G3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
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MMBZ5227B-HE3-18 MMBZ5227B-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Qualification: AEC-Q101
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MMBZ5227C-E3-18 MMBZ5227C-E3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
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MMBZ5227C-G3-18 MMBZ5227C-G3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
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MMBZ5227C-HE3-18 MMBZ5227C-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Qualification: AEC-Q101
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MMBZ5229B-E3-18 MMBZ5229B-E3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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MMBZ5229B-G3-18 MMBZ5229B-G3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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MMBZ5229B-HE3-18 MMBZ5229B-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
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MMBZ5229C-E3-18 MMBZ5229C-E3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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MMBZ5229C-G3-18 MMBZ5229C-G3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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MMBZ5229C-HE3-18 MMBZ5229C-HE3-18 Vishay General Semiconductor - Diodes Division Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
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MMBZ5230B-E3-18 MMBZ5230B-E3-18 Vishay General Semiconductor - Diodes Division mmbz5225.pdf Description: DIODE ZENER 4.7V 225MW SOT23-3
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MMBZ5230B-G3-18 MMBZ5230B-G3-18 Vishay General Semiconductor - Diodes Division mmbz5225g.pdf Description: DIODE ZENER 4.7V 225MW SOT23-3
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MMBZ5230B-HE3-18 MMBZ5230B-HE3-18 Vishay General Semiconductor - Diodes Division mmbz5225.pdf Description: DIODE ZENER 4.7V 225MW SOT23-3
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LL4151-GS18 ll4151.pdf
LL4151-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 300MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+1.41 грн
Мінімальне замовлення: 10000
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LL4151-M-18 ll4151-m.pdf
LL4151-M-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 300MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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LL42-GS18 ll42.pdf
LL42-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOT 30V 200MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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LL43-GS18 ll42.pdf
LL43-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOT 30V 200MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 15 mA
Current - Reverse Leakage @ Vr: 500 nA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+5.33 грн
Мінімальне замовлення: 10000
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LL4448-GS18 ll4148.pdf
LL4448-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 75V 300MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 25 nA @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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LL46-GS18 ll46.pdf
LL46-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOT 100V 150MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-80 MiniMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 250 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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LS101A-GS18 ls101a.pdf
LS101A-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 30MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 50 V
Qualification: AEC-Q101
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LS101B-GS18 ls101a.pdf
LS101B-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 30MA SOD80
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Current - Average Rectified (Io): 30mA
Supplier Device Package: SOD-80 QuadroMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
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MB3035S-E3/8W M30x5S%2CMB30x5S%2CMI30x5S.pdf
MB3035S-E3/8W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 30A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 980pF @ 4V, 1MHz
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
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MBL106S-M3/I
MBL106S-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 1A 4SMD
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MBRB10100CT-M3/8W mbr10100-m3.pdf
MBRB10100CT-M3/8W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 90V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 90 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBRB10100-M3/8W mbr10100-m3.pdf
MBRB10100-M3/8W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBRB10H35-E3/81 MBR(F,B)10Hxx.pdf
MBRB10H35-E3/81
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 10A TO263AB
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MBRB20100CT-M3/8W mbrb20090ct-m3.pdf
MBRB20100CT-M3/8W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
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MBRB25H50CTHE3/81 MBR(F,B)25HxxCT_Rev_6-12-13.pdf
MBRB25H50CTHE3/81
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 50V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 50 V
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MCL103A-TR3 mcl103a.pdf
MCL103A-TR3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTT 40V 200MA MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
Grade: Automotive
Qualification: AEC-Q101
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MCL4151-TR3 mcl4151.pdf
MCL4151-TR3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 75V 200MA MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 125°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 50 mA
Current - Reverse Leakage @ Vr: 50 nA @ 50 V
Qualification: AEC-Q101
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MCL4448-TR3 mlc4148.pdf
MCL4448-TR3
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 75V 150MA MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 8 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 150mA
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 17773 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.17 грн
Мінімальне замовлення: 10000
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MMBD6050-E3-18
MMBD6050-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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MMBD6050-G3-18
MMBD6050-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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MMBD6050-HE3-18
MMBD6050-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 70V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Qualification: AEC-Q101
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MMBD914-E3-18 mmbd914.pdf
MMBD914-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 200MA SOT233
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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MMBD914-HE3-18
MMBD914-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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MMBZ27VDA-E3-18 mmbz27vd.pdf
MMBZ27VDA-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 225MW SOT23
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MMBZ27VDA-G3-18 mmbz27vdag.pdf
MMBZ27VDA-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 27V 225MW SOT23
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MMBZ4624-G3-18 mmbz4617g.pdf
MMBZ4624-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 350MW SOT23-3
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MMBZ4624-HE3-18 mmbz4617.pdf
MMBZ4624-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 350MW SOT23-3
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MMBZ4699-E3-18
MMBZ4699-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
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MMBZ4699-G3-18
MMBZ4699-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
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MMBZ4699-HE3-18
MMBZ4699-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 12 V
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 50 nA @ 9.1 V
Qualification: AEC-Q101
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MMBZ4701-E3-18
MMBZ4701-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.6 V
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MMBZ4701-G3-18
MMBZ4701-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.6 V
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MMBZ4701-HE3-18
MMBZ4701-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 14V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 14 V
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 350 mW
Current - Reverse Leakage @ Vr: 50 nA @ 10.6 V
Qualification: AEC-Q101
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MMBZ5225B-E3-18 mmbz5225.pdf
MMBZ5225B-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 225MW SOT23-3
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MMBZ5225B-G3-18 mmbz5225g.pdf
MMBZ5225B-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 225MW SOT23-3
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MMBZ5225B-HE3-18 mmbz5225.pdf
MMBZ5225B-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 225MW SOT23-3
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MMBZ5225C-E3-18 mmbz5225.pdf
MMBZ5225C-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 225MW SOT23-3
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MMBZ5225C-G3-18 mmbz5225g.pdf
MMBZ5225C-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 225MW SOT23-3
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MMBZ5225C-HE3-18 mmbz5225.pdf
MMBZ5225C-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3V 225MW SOT23-3
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MMBZ5226B-E3-18
MMBZ5226B-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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MMBZ5226B-G3-18
MMBZ5226B-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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MMBZ5226B-HE3-18
MMBZ5226B-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Qualification: AEC-Q101
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MMBZ5226C-E3-18
MMBZ5226C-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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MMBZ5226C-G3-18
MMBZ5226C-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
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MMBZ5226C-HE3-18
MMBZ5226C-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 28 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 25 µA @ 1 V
Qualification: AEC-Q101
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MMBZ5227B-E3-18
MMBZ5227B-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
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MMBZ5227B-G3-18
MMBZ5227B-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
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MMBZ5227B-HE3-18
MMBZ5227B-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Qualification: AEC-Q101
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MMBZ5227C-E3-18
MMBZ5227C-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
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MMBZ5227C-G3-18
MMBZ5227C-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
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MMBZ5227C-HE3-18
MMBZ5227C-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
Qualification: AEC-Q101
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MMBZ5229B-E3-18
MMBZ5229B-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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MMBZ5229B-G3-18
MMBZ5229B-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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MMBZ5229B-HE3-18
MMBZ5229B-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
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MMBZ5229C-E3-18
MMBZ5229C-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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MMBZ5229C-G3-18
MMBZ5229C-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
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MMBZ5229C-HE3-18
MMBZ5229C-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 225MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 225 mW
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Qualification: AEC-Q101
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MMBZ5230B-E3-18 mmbz5225.pdf
MMBZ5230B-E3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 225MW SOT23-3
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MMBZ5230B-G3-18 mmbz5225g.pdf
MMBZ5230B-G3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 225MW SOT23-3
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MMBZ5230B-HE3-18 mmbz5225.pdf
MMBZ5230B-HE3-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.7V 225MW SOT23-3
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В кошику  од. на суму  грн.
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