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TZMC36-GS08 TZMC36-GS08 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 36V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Qualification: AEC-Q101
на замовлення 3031 шт:
термін постачання 21-31 дні (днів)
34+9.53 грн
49+6.27 грн
100+3.10 грн
500+2.85 грн
1000+2.78 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
TZMC3V9-GS08 TZMC3V9-GS08 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 3.9V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
на замовлення 19247 шт:
термін постачання 21-31 дні (днів)
25+12.70 грн
40+7.72 грн
100+3.46 грн
500+2.98 грн
1000+2.91 грн
Мінімальне замовлення: 25
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TZMC6V2-GS08 TZMC6V2-GS08 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 6.2V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 2 V
Qualification: AEC-Q101
на замовлення 15093 шт:
термін постачання 21-31 дні (днів)
34+9.53 грн
48+6.50 грн
100+3.10 грн
500+2.85 грн
1000+2.78 грн
Мінімальне замовлення: 34
В кошику  од. на суму  грн.
VBUS053CZ-HAF-G-08 VBUS053CZ-HAF-G-08 Vishay General Semiconductor - Diodes Division vbus053c.pdf Description: TVS DIODE 5.5VWM 18VC LLP75-7L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: USB OTG
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP75-7L
Unidirectional Channels: 3
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 54W
Power Line Protection: Yes
Part Status: Active
на замовлення 17476 шт:
термін постачання 21-31 дні (днів)
7+47.63 грн
17+18.50 грн
Мінімальне замовлення: 7
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VCUT05B1-DD1-G-08 VCUT05B1-DD1-G-08 Vishay General Semiconductor - Diodes Division vcut05b1dd1.pdf Description: TVS DIODE 5.5V 12.5V LLP1006-2M
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 145°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1006-2M
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 38W
Power Line Protection: No
Part Status: Active
на замовлення 67012 шт:
термін постачання 21-31 дні (днів)
16+20.64 грн
23+13.30 грн
100+8.94 грн
500+6.46 грн
1000+5.82 грн
2000+5.26 грн
Мінімальне замовлення: 16
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VESD03A1C-HD1-GS08 VESD03A1C-HD1-GS08 Vishay General Semiconductor - Diodes Division vesd03a1.pdf Description: TVS DIODE 3.3VWM 10VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 78pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 95W
Power Line Protection: No
на замовлення 119137 шт:
термін постачання 21-31 дні (днів)
16+20.64 грн
23+13.46 грн
100+5.12 грн
500+4.40 грн
1000+3.98 грн
2000+3.95 грн
Мінімальне замовлення: 16
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ZM4755A-GS08 ZM4755A-GS08 Vishay General Semiconductor - Diodes Division zm4728a.pdf Description: DIODE ZENER 43V 1W DO213AB
на замовлення 9023 шт:
термін постачання 21-31 дні (днів)
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MBRB1545CTHE3_A/P MBRB1545CTHE3_A/P Vishay General Semiconductor - Diodes Division mbrf15xxct.pdf Description: DIODE ARRAY SCHOTTKY 45V TO263AB
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MBRB1645HE3_A/P MBRB1645HE3_A/P Vishay General Semiconductor - Diodes Division mbrf16xx.pdf Description: DIODE SCHOTTKY 45V 16A TO263AB
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MBRB2045CTHE3_A/P MBRB2045CTHE3_A/P Vishay General Semiconductor - Diodes Division mbr20xxct.pdf Description: DIODE ARRAY SCHOTTKY 45V TO263AB
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MBRB745HE3_A/P MBRB745HE3_A/P Vishay General Semiconductor - Diodes Division mbr7xx.pdf Description: DIODE SCHOTTKY 45V 7.5A TO263AB
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SBLB1640CTHE3_A/P SBLB1640CTHE3_A/P Vishay General Semiconductor - Diodes Division bl1640ct.pdf Description: DIODE ARRAY SCHOTTKY 40V TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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MBRB2045CTHE3_A/I MBRB2045CTHE3_A/I Vishay General Semiconductor - Diodes Division mbr20xxct.pdf Description: DIODE ARRAY SCHOTTKY 45V TO263AB
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SBLB1640CTHE3_A/I SBLB1640CTHE3_A/I Vishay General Semiconductor - Diodes Division bl1640ct.pdf Description: DIODE ARRAY SCHOTTKY 40V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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VBUS54FD-SD1-G4-08 VBUS54FD-SD1-G4-08 Vishay General Semiconductor - Diodes Division 48113.pdf Description: TVS DIODE 5.5VWM 15VC CLP1007-FL
Packaging: Tape & Reel (TR)
Package / Case: 5-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CLP1007-FL
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 45W
Power Line Protection: No
Part Status: Active
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VBUS54FD-SD1-G4-08 VBUS54FD-SD1-G4-08 Vishay General Semiconductor - Diodes Division 48113.pdf Description: TVS DIODE 5.5VWM 15VC CLP1007-FL
Packaging: Cut Tape (CT)
Package / Case: 5-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CLP1007-FL
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 45W
Power Line Protection: No
Part Status: Active
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MBR2060CT-E3/4W MBR2060CT-E3/4W Vishay General Semiconductor - Diodes Division MBR%28F%2CB%2920xxCT.pdf Description: DIODE ARR SCHOTT 60V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
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1.5KE180AL-83E3/72 1.5KE180AL-83E3/72 Vishay General Semiconductor - Diodes Division 1.5KE6.8A _-_1.5KE540A,1N6267A-1N6303A_Rev10-11-16.pdf Description: TVS DIODE 154VWM 246VC 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE75AL-407E3/72 1.5KE75AL-407E3/72 Vishay General Semiconductor - Diodes Division Description: TVS DIODE 1500W 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Supplier Device Package: 1.5KE
Part Status: Obsolete
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1.5KE75AL407HE3/72 1.5KE75AL407HE3/72 Vishay General Semiconductor - Diodes Division Description: TVS DIODE 1500W 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Supplier Device Package: 1.5KE
Part Status: Obsolete
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1N3957GP-M3/73 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
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1N4001GPE-M3/73 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
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1N4003GPE-M3/73 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
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1N4005GPE-M3/73 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
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1N4248GP-M3/73 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
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1N4935GP-M3/73 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
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1N4942GP-M3/73 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
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BY252GP-E3/73 Vishay General Semiconductor - Diodes Division BY251GP_-_BY255GP.pdf Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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BY253GP-E3/73 Vishay General Semiconductor - Diodes Division BY251GP_-_BY255GP.pdf Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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DGP30L-5705E3/72 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO201AD
Packaging: Tape & Box (TB)
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EGP10G-M3S/73 Vishay General Semiconductor - Diodes Division EGP10x.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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EGP30A-E3/73 Vishay General Semiconductor - Diodes Division EGP30x.pdf Description: DIODE GEN PURP 50V 3A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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EGP50GL-005E3/72 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE GP20
Packaging: Tape & Box (TB)
Part Status: Obsolete
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EGP50GL-6630E3/72 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE GP20
Packaging: Tape & Box (TB)
Part Status: Obsolete
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GP10GE-6329M3/73 Vishay General Semiconductor - Diodes Division GP10A%20-%20GP10Y.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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GP10TE-M3/73 Vishay General Semiconductor - Diodes Division GP10A%20-%20GP10Y.pdf Description: DIODE GEN PURP 1.3KV 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
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RGP10G-6038M3/73 RGP10G-6038M3/73 Vishay General Semiconductor - Diodes Division RGP10x_-M3.pdf Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RGP10J-5025M3/73 Vishay General Semiconductor - Diodes Division RGP10x_-M3.pdf Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RGP10J-7008M3/73 Vishay General Semiconductor - Diodes Division RGP10x_-M3.pdf Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RGP10M-5010E3/73 Vishay General Semiconductor - Diodes Division RGP10x_-M3.pdf Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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RGP10M-7008E3/72 Vishay General Semiconductor - Diodes Division RGP10x_-M3.pdf Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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RGP15J-5012E3/73 Vishay General Semiconductor - Diodes Division RGP15x.pdf Description: DIODE GEN PURP 600V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RGP15JL-6307E3/72 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
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RGP30ML-6884E3/72 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
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RGP30ML-6888E3/72 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
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SBYV26C-5001M3/73 Vishay General Semiconductor - Diodes Division SBYV26C-M3.pdf Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
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TVR06J-5700E3/73 Vishay General Semiconductor - Diodes Division TVR06D_-_TVR06K.pdf Description: DIODE GP 600V 600MA DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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TVR06J-5700M3/73 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
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TVR10G-5700E3/73 Vishay General Semiconductor - Diodes Division TVR10D-TVR10K.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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TVR10G-5701E3/73 Vishay General Semiconductor - Diodes Division TVR10D-TVR10K.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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TVR10G-5702E3/73 Vishay General Semiconductor - Diodes Division TVR10D-TVR10K.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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1.5KE400A-803E3/54 1.5KE400A-803E3/54 Vishay General Semiconductor - Diodes Division 1.5KE6.8A _-_1.5KE540A,1N6267A-1N6303A_Rev10-11-16.pdf Description: TVS DIODE 342VWM 548VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
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1.5KE400A-804E3/54 1.5KE400A-804E3/54 Vishay General Semiconductor - Diodes Division 1.5KE6.8A%20_-_1.5KE540A%2C1N6267A-1N6303A_Rev10-11-16.pdf Description: TVS DIODE 342VWM 548VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
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1N3957GP-M3/54 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
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1N4003GPE-M3/54 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Part Status: Obsolete
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1N4004GPE-M3/54 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Part Status: Obsolete
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1N4248GP-M3/54 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Part Status: Obsolete
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GP10GE-146M3/54 Vishay General Semiconductor - Diodes Division GP10A%20-%20GP10Y.pdf Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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GP10TE-M3/54 Vishay General Semiconductor - Diodes Division GP10A%20-%20GP10Y.pdf Description: DIODE GEN PURP 1.3KV 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
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RGP02-20E-805E3/53 Vishay General Semiconductor - Diodes Division RGP02-xxE.pdf Description: DIODE GEN PURP 2KV 500MA DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
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TZMC36-GS08 tzm.pdf
TZMC36-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 27 V
Qualification: AEC-Q101
на замовлення 3031 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
34+9.53 грн
49+6.27 грн
100+3.10 грн
500+2.85 грн
1000+2.78 грн
Мінімальне замовлення: 34
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TZMC3V9-GS08 tzm.pdf
TZMC3V9-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Qualification: AEC-Q101
на замовлення 19247 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+12.70 грн
40+7.72 грн
100+3.46 грн
500+2.98 грн
1000+2.91 грн
Мінімальне замовлення: 25
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TZMC6V2-GS08 tzm.pdf
TZMC6V2-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 2 V
Qualification: AEC-Q101
на замовлення 15093 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
34+9.53 грн
48+6.50 грн
100+3.10 грн
500+2.85 грн
1000+2.78 грн
Мінімальне замовлення: 34
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VBUS053CZ-HAF-G-08 vbus053c.pdf
VBUS053CZ-HAF-G-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 18VC LLP75-7L
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: USB OTG
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP75-7L
Unidirectional Channels: 3
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 18V
Power - Peak Pulse: 54W
Power Line Protection: Yes
Part Status: Active
на замовлення 17476 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+47.63 грн
17+18.50 грн
Мінімальне замовлення: 7
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VCUT05B1-DD1-G-08 vcut05b1dd1.pdf
VCUT05B1-DD1-G-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5V 12.5V LLP1006-2M
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 145°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: LLP1006-2M
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 12.5V
Power - Peak Pulse: 38W
Power Line Protection: No
Part Status: Active
на замовлення 67012 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+20.64 грн
23+13.30 грн
100+8.94 грн
500+6.46 грн
1000+5.82 грн
2000+5.26 грн
Мінімальне замовлення: 16
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VESD03A1C-HD1-GS08 vesd03a1.pdf
VESD03A1C-HD1-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 3.3VWM 10VC LLP1006-2L
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 78pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: LLP1006-2L
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5V
Voltage - Clamping (Max) @ Ipp: 10V
Power - Peak Pulse: 95W
Power Line Protection: No
на замовлення 119137 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
16+20.64 грн
23+13.46 грн
100+5.12 грн
500+4.40 грн
1000+3.98 грн
2000+3.95 грн
Мінімальне замовлення: 16
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ZM4755A-GS08 zm4728a.pdf
ZM4755A-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 43V 1W DO213AB
на замовлення 9023 шт:
термін постачання 21-31 дні (днів)
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MBRB1545CTHE3_A/P mbrf15xxct.pdf
MBRB1545CTHE3_A/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V TO263AB
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MBRB1645HE3_A/P mbrf16xx.pdf
MBRB1645HE3_A/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 16A TO263AB
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MBRB2045CTHE3_A/P mbr20xxct.pdf
MBRB2045CTHE3_A/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V TO263AB
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MBRB745HE3_A/P mbr7xx.pdf
MBRB745HE3_A/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 7.5A TO263AB
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SBLB1640CTHE3_A/P bl1640ct.pdf
SBLB1640CTHE3_A/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 40V TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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MBRB2045CTHE3_A/I mbr20xxct.pdf
MBRB2045CTHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 45V TO263AB
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SBLB1640CTHE3_A/I bl1640ct.pdf
SBLB1640CTHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTTKY 40V TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -40°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 8 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
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VBUS54FD-SD1-G4-08 48113.pdf
VBUS54FD-SD1-G4-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 15VC CLP1007-FL
Packaging: Tape & Reel (TR)
Package / Case: 5-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CLP1007-FL
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 45W
Power Line Protection: No
Part Status: Active
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VBUS54FD-SD1-G4-08 48113.pdf
VBUS54FD-SD1-G4-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 5.5VWM 15VC CLP1007-FL
Packaging: Cut Tape (CT)
Package / Case: 5-XFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: CLP1007-FL
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.9V
Voltage - Clamping (Max) @ Ipp: 15V
Power - Peak Pulse: 45W
Power Line Protection: No
Part Status: Active
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MBR2060CT-E3/4W MBR%28F%2CB%2920xxCT.pdf
MBR2060CT-E3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 60V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
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1.5KE180AL-83E3/72 1.5KE6.8A _-_1.5KE540A,1N6267A-1N6303A_Rev10-11-16.pdf
1.5KE180AL-83E3/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 154VWM 246VC 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE75AL-407E3/72
1.5KE75AL-407E3/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 1500W 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Supplier Device Package: 1.5KE
Part Status: Obsolete
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1.5KE75AL407HE3/72
1.5KE75AL407HE3/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 1500W 1.5KE
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Supplier Device Package: 1.5KE
Part Status: Obsolete
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1N3957GP-M3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
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1N4001GPE-M3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
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1N4003GPE-M3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
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1N4005GPE-M3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
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1N4248GP-M3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
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1N4935GP-M3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
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1N4942GP-M3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
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BY252GP-E3/73 BY251GP_-_BY255GP.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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BY253GP-E3/73 BY251GP_-_BY255GP.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 3A DO201AD
Packaging: Tape & Box (TB)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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DGP30L-5705E3/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO201AD
Packaging: Tape & Box (TB)
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EGP10G-M3S/73 EGP10x.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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EGP30A-E3/73 EGP30x.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 50V 3A GP20
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 85pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: GP20
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
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EGP50GL-005E3/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE GP20
Packaging: Tape & Box (TB)
Part Status: Obsolete
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EGP50GL-6630E3/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE GP20
Packaging: Tape & Box (TB)
Part Status: Obsolete
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GP10GE-6329M3/73 GP10A%20-%20GP10Y.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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GP10TE-M3/73 GP10A%20-%20GP10Y.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
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RGP10G-6038M3/73 RGP10x_-M3.pdf
RGP10G-6038M3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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RGP10J-5025M3/73 RGP10x_-M3.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RGP10J-7008M3/73 RGP10x_-M3.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RGP10M-5010E3/73 RGP10x_-M3.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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RGP10M-7008E3/72 RGP10x_-M3.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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RGP15J-5012E3/73 RGP15x.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1.5A DO204AC
Packaging: Tape & Box (TB)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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RGP15JL-6307E3/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
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RGP30ML-6884E3/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
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RGP30ML-6888E3/72
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
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SBYV26C-5001M3/73 SBYV26C-M3.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 600
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TVR06J-5700E3/73 TVR06D_-_TVR06K.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 600V 600MA DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 600mA
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 mA
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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TVR06J-5700M3/73
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Box (TB)
Part Status: Obsolete
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TVR10G-5700E3/73 TVR10D-TVR10K.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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TVR10G-5701E3/73 TVR10D-TVR10K.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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TVR10G-5702E3/73 TVR10D-TVR10K.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Box (TB)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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1.5KE400A-803E3/54 1.5KE6.8A _-_1.5KE540A,1N6267A-1N6303A_Rev10-11-16.pdf
1.5KE400A-803E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 342VWM 548VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
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1.5KE400A-804E3/54 1.5KE6.8A%20_-_1.5KE540A%2C1N6267A-1N6303A_Rev10-11-16.pdf
1.5KE400A-804E3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 342VWM 548VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 342V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 380V
Voltage - Clamping (Max) @ Ipp: 548V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Obsolete
Grade: Automotive
Qualification: AEC-Q101
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1N3957GP-M3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
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1N4003GPE-M3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Part Status: Obsolete
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1N4004GPE-M3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Part Status: Obsolete
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1N4248GP-M3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE DO-204AL
Packaging: Tape & Reel (TR)
Mounting Type: Through Hole
Part Status: Obsolete
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GP10GE-146M3/54 GP10A%20-%20GP10Y.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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GP10TE-M3/54 GP10A%20-%20GP10Y.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.3KV 1A DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
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RGP02-20E-805E3/53 RGP02-xxE.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 2KV 500MA DO204AL
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2000 V
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