Продукція > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Всі товари виробника VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40635) > Сторінка 464 з 678
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VF20100S-E3/4W | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 100V 20A ITO220AB |
на замовлення 492 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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VS-6EVX06-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURPOSE 600V SLIMDPAK |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-6EVX06-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURPOSE 600V SLIMDPAK |
на замовлення 1378 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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MBRB1045HE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 10A TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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MBRB1045HE3_B/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 10A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-MBRB1045HM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 10A TO263ABPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 600pF @ 5V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-MBRB1045TRLHM3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 45V 10A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 600pF @ 5V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A Current - Reverse Leakage @ Vr: 100 µA @ 45 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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TLZ5V1B-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 500MW SOD80Packaging: Tape & Reel (TR) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-80 MiniMELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 2 V |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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TLZ5V1B-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.1V 500MW SOD80Packaging: Cut Tape (CT) Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 20 Ohms Supplier Device Package: SOD-80 MiniMELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 2 V |
на замовлення 5424 шт: термін постачання 21-31 дні (днів) |
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TLZ10C-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 10V 500MW SOD80 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TLZ10C-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 10V 500MW SOD80 |
на замовлення 10812 шт: термін постачання 21-31 дні (днів) |
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BZD27C15P-M3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 15V 800MW DO219ABPackaging: Tape & Reel (TR) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-219AB (SMF) Power - Max: 800 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 11 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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BZD27C15P-M3-18 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 15V 800MW DO219ABPackaging: Cut Tape (CT) Package / Case: DO-219AB Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-219AB (SMF) Power - Max: 800 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 1 µA @ 11 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS2GHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 1.5A DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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RS2GHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE STANDARD 400V 1.5A DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Technology: Standard Capacitance @ Vr, F: 20pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3528 шт: термін постачання 21-31 дні (днів) |
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V35PW60-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 35A SLIMDPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3600pF @ 4V, 1MHz Current - Average Rectified (Io): 35A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 35 A Current - Reverse Leakage @ Vr: 5 mA @ 600 V |
на замовлення 13500 шт: термін постачання 21-31 дні (днів) |
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V35PW60-M3/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 60V 35A SLIMDPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 3600pF @ 4V, 1MHz Current - Average Rectified (Io): 35A Supplier Device Package: SlimDPAK Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 720 mV @ 35 A Current - Reverse Leakage @ Vr: 5 mA @ 600 V |
на замовлення 14206 шт: термін постачання 21-31 дні (днів) |
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VS-1EQH01-M3/H | Vishay General Semiconductor - Diodes Division |
Description: ULTRAFAST RECTIFIER 1A DO-219AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-1EQH01-M3/H | Vishay General Semiconductor - Diodes Division |
Description: ULTRAFAST RECTIFIER 1A DO-219AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-1EQH02HM3/H | Vishay General Semiconductor - Diodes Division |
Description: ULTRAFAST RECTIFIER 1A DO-219AD |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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VS-1EQH02HM3/H | Vishay General Semiconductor - Diodes Division |
Description: ULTRAFAST RECTIFIER 1A DO-219AD |
на замовлення 4500 шт: термін постачання 21-31 дні (днів) |
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VS-1EQH01HM3/H | Vishay General Semiconductor - Diodes Division |
Description: ULTRAFAST RECTIFIER 1A DO-219AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-1EQH01HM3/H | Vishay General Semiconductor - Diodes Division |
Description: ULTRAFAST RECTIFIER 1A DO-219AD |
на замовлення 4000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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VS-1EQH02-M3/H | Vishay General Semiconductor - Diodes Division |
Description: ULTRAFAST RECTIFIER 1A DO-219AD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-1EQH02-M3/H | Vishay General Semiconductor - Diodes Division |
Description: ULTRAFAST RECTIFIER 1A DO-219AD |
на замовлення 204 шт: термін постачання 21-31 дні (днів) |
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1N5232C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.6V 500MW DO204AHPackaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 11 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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1N5232C-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 5.6V 500MW DO204AHPackaging: Cut Tape (CT) Tolerance: ±2% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: 175°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 11 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V |
на замовлення 29926 шт: термін постачання 21-31 дні (днів) |
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VB40100C-E3/8W | Vishay General Semiconductor - Diodes Division |
Description: DIODE ARR SCHOT 100V 20A TO263ABPackaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-263AB (D²PAK) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A Current - Reverse Leakage @ Vr: 1 mA @ 100 V |
на замовлення 11947 шт: термін постачання 21-31 дні (днів) |
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PLZ9V1C-HG3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.07V 960MW DO219AC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PLZ9V1C-HG3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 9.07V 960MW DO219AC |
на замовлення 47 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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SBLB10L25HE3_A/P | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 25V 10A TO263AB |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBLB10L25HE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 25V 10A TO263ABPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 25 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A Current - Reverse Leakage @ Vr: 800 µA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SBLB10L25HE3/45 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 25V 10A TO263ABPackaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 10A Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 25 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A Current - Reverse Leakage @ Vr: 800 µA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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V12PM12-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V 12A TO277APackaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 120 V |
на замовлення 7500 шт: термін постачання 21-31 дні (днів) |
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V12PM12-M3/86A | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 120V 12A TO277APackaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 12A Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 120 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A Current - Reverse Leakage @ Vr: 500 µA @ 120 V |
на замовлення 8631 шт: термін постачання 21-31 дні (днів) |
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TZMB2V4-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 2.4V 500MW SOD80Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 2.4 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: SOD-80 MiniMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 10000 шт: термін постачання 21-31 дні (днів) |
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TZMB2V4-GS08 | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 2.4V 500MW SOD80Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: DO-213AC, MINI-MELF, SOD-80 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 2.4 V Impedance (Max) (Zzt): 85 Ohms Supplier Device Package: SOD-80 MiniMELF Grade: Automotive Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 1 V Qualification: AEC-Q101 |
на замовлення 11449 шт: термін постачання 21-31 дні (днів) |
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BZM55B2V4-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 2.4V 500MW MICROMELFPackaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 2.4 V Impedance (Max) (Zzt): 600 Ohms Supplier Device Package: MicroMELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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BZM55B2V4-TR | Vishay General Semiconductor - Diodes Division |
Description: DIODE ZENER 2.4V 500MW MICROMELFPackaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 2.4 V Impedance (Max) (Zzt): 600 Ohms Supplier Device Package: MicroMELF Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 1 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 6750 шт: термін постачання 21-31 дні (днів) |
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GBU4GL-6420E3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 400V 3A GBUPackaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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GBU4GL-6420M3/51 | Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1PHASE 400V 3A GBUPackaging: Tube Package / Case: 4-SIP, GBU Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBU Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 3 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS1PG-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO220AA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RS1PG-M3/84A | Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 400V 1A DO220AA |
на замовлення 8950 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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RS1PBHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE 100V 1A DO-220AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS1PBHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE 100V 1A DO-220AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS1PDHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE 100V 1A DO-220AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS1PGHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE 100V 1A DO-220AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS1PGHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE 100V 1A DO-220AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS1PJHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: DIODE 100V 1A DO-220AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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RS1PJHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: DIODE 100V 1A DO-220AA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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VS-50WQ04FNTR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 5.5A TO252AAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 405pF @ 5V, 1MHz Current - Average Rectified (Io): 5.5A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 5 A Current - Reverse Leakage @ Vr: 3 mA @ 40 V |
на замовлення 1550 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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VS-50WQ04FNTR-M3 | Vishay General Semiconductor - Diodes Division |
Description: DIODE SCHOTTKY 40V 5.5A TO252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 405pF @ 5V, 1MHz Current - Average Rectified (Io): 5.5A Supplier Device Package: TO-252AA (DPAK) Operating Temperature - Junction: -40°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 510 mV @ 5 A Current - Reverse Leakage @ Vr: 3 mA @ 40 V |
на замовлення 2486 шт: термін постачання 21-31 дні (днів) |
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P6SMB39CAHE3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33.3VWM 53.9VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 11.1A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
P6SMB39CAHE3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33.3VWM 53.9VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 11.1A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
P6SMB39CAHM3_A/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33.3VWM 53.9VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 11.1A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
P6SMB39CAHE3/52 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33.3VWM 53.9VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 11.1A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
P6SMB39CAHE3/52 | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33.3VWM 53.9VC DO214AAPackaging: Cut Tape (CT) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Current - Peak Pulse (10/1000µs): 11.1A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
P6SMB39CAHM3_A/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33.3VWM 53.9VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 11.1A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
P6SMB39CAHM3/H | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33.3VWM 53.9VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 11.1A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
|
P6SMB39CAHM3/I | Vishay General Semiconductor - Diodes Division |
Description: TVS DIODE 33.3VWM 53.9VC DO214AAPackaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: Telecom Current - Peak Pulse (10/1000µs): 11.1A Voltage - Reverse Standoff (Typ): 33.3V Supplier Device Package: DO-214AA (SMB) Bidirectional Channels: 1 Voltage - Breakdown (Min): 37.1V Voltage - Clamping (Max) @ Ipp: 53.9V Power - Peak Pulse: 600W Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
| VF20100S-E3/4W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 20A ITO220AB
Description: DIODE SCHOTTKY 100V 20A ITO220AB
на замовлення 492 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| VS-6EVX06-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE 600V SLIMDPAK
Description: DIODE GEN PURPOSE 600V SLIMDPAK
товару немає в наявності
В кошику
од. на суму грн.
| VS-6EVX06-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURPOSE 600V SLIMDPAK
Description: DIODE GEN PURPOSE 600V SLIMDPAK
на замовлення 1378 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| MBRB1045HE3_A/P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO263AB
Description: DIODE SCHOTTKY 45V 10A TO263AB
товару немає в наявності
В кошику
од. на суму грн.
| MBRB1045HE3_B/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| VS-MBRB1045HM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| VS-MBRB1045TRLHM3 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 45V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 600pF @ 5V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| TLZ5V1B-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 3.44 грн |
| 5000+ | 2.96 грн |
| TLZ5V1B-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
Description: DIODE ZENER 5.1V 500MW SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: SOD-80 MiniMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 2 V
на замовлення 5424 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 31+ | 10.87 грн |
| 44+ | 7.32 грн |
| 100+ | 3.57 грн |
| 500+ | 3.28 грн |
| 1000+ | 3.20 грн |
| TLZ10C-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 500MW SOD80
Description: DIODE ZENER 10V 500MW SOD80
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 3.74 грн |
| 5000+ | 3.13 грн |
| TLZ10C-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 500MW SOD80
Description: DIODE ZENER 10V 500MW SOD80
на замовлення 10812 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 21.73 грн |
| 20+ | 16.82 грн |
| 100+ | 8.92 грн |
| 500+ | 5.51 грн |
| 1000+ | 3.75 грн |
| BZD27C15P-M3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
товару немає в наявності
В кошику
од. на суму грн.
| BZD27C15P-M3-18 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
Description: DIODE ZENER 15V 800MW DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AB (SMF)
Power - Max: 800 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 11 V
товару немає в наявності
В кошику
од. на суму грн.
| RS2GHE3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 400V 1.5A DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 750+ | 9.11 грн |
| 1500+ | 8.69 грн |
| RS2GHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1.5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE STANDARD 400V 1.5A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3528 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 40.12 грн |
| 13+ | 25.03 грн |
| 100+ | 19.73 грн |
| V35PW60-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3600pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 35 A
Current - Reverse Leakage @ Vr: 5 mA @ 600 V
Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3600pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 35 A
Current - Reverse Leakage @ Vr: 5 mA @ 600 V
на замовлення 13500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4500+ | 32.15 грн |
| 9000+ | 30.24 грн |
| V35PW60-M3/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3600pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 35 A
Current - Reverse Leakage @ Vr: 5 mA @ 600 V
Description: DIODE SCHOTTKY 60V 35A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 3600pF @ 4V, 1MHz
Current - Average Rectified (Io): 35A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 35 A
Current - Reverse Leakage @ Vr: 5 mA @ 600 V
на замовлення 14206 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 109.49 грн |
| 10+ | 70.18 грн |
| 100+ | 51.66 грн |
| 500+ | 38.27 грн |
| 1000+ | 34.98 грн |
| 2000+ | 34.74 грн |
| VS-1EQH01-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST RECTIFIER 1A DO-219AD
Description: ULTRAFAST RECTIFIER 1A DO-219AD
товару немає в наявності
В кошику
од. на суму грн.
| VS-1EQH01-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST RECTIFIER 1A DO-219AD
Description: ULTRAFAST RECTIFIER 1A DO-219AD
товару немає в наявності
В кошику
од. на суму грн.
| VS-1EQH02HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST RECTIFIER 1A DO-219AD
Description: ULTRAFAST RECTIFIER 1A DO-219AD
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4500+ | 6.62 грн |
| VS-1EQH02HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST RECTIFIER 1A DO-219AD
Description: ULTRAFAST RECTIFIER 1A DO-219AD
на замовлення 4500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 35.10 грн |
| 13+ | 25.51 грн |
| 100+ | 14.44 грн |
| 500+ | 8.97 грн |
| 1000+ | 6.88 грн |
| 2000+ | 5.98 грн |
| VS-1EQH01HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST RECTIFIER 1A DO-219AD
Description: ULTRAFAST RECTIFIER 1A DO-219AD
товару немає в наявності
В кошику
од. на суму грн.
| VS-1EQH01HM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST RECTIFIER 1A DO-219AD
Description: ULTRAFAST RECTIFIER 1A DO-219AD
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| VS-1EQH02-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST RECTIFIER 1A DO-219AD
Description: ULTRAFAST RECTIFIER 1A DO-219AD
товару немає в наявності
В кошику
од. на суму грн.
| VS-1EQH02-M3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: ULTRAFAST RECTIFIER 1A DO-219AD
Description: ULTRAFAST RECTIFIER 1A DO-219AD
на замовлення 204 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.43 грн |
| 13+ | 26.80 грн |
| 100+ | 14.23 грн |
| 1N5232C-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Description: DIODE ZENER 5.6V 500MW DO204AH
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.40 грн |
| 20000+ | 2.09 грн |
| 1N5232C-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.6V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Description: DIODE ZENER 5.6V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
на замовлення 29926 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.21 грн |
| 38+ | 8.53 грн |
| 100+ | 5.28 грн |
| 500+ | 3.61 грн |
| 1000+ | 3.18 грн |
| 2000+ | 2.81 грн |
| 5000+ | 2.37 грн |
| VB40100C-E3/8W |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
Description: DIODE ARR SCHOT 100V 20A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 20 A
Current - Reverse Leakage @ Vr: 1 mA @ 100 V
на замовлення 11947 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 218.15 грн |
| 10+ | 174.49 грн |
| 100+ | 138.93 грн |
| PLZ9V1C-HG3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.07V 960MW DO219AC
Description: DIODE ZENER 9.07V 960MW DO219AC
товару немає в наявності
В кошику
од. на суму грн.
| PLZ9V1C-HG3_A/H |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.07V 960MW DO219AC
Description: DIODE ZENER 9.07V 960MW DO219AC
на замовлення 47 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| SBLB10L25HE3_A/P |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 10A TO263AB
Description: DIODE SCHOTTKY 25V 10A TO263AB
товару немає в наявності
В кошику
од. на суму грн.
| SBLB10L25HE3_A/I |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 25 V
Description: DIODE SCHOTTKY 25V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| SBLB10L25HE3/45 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 25 V
Description: DIODE SCHOTTKY 25V 10A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Discontinued at Digi-Key
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 10 A
Current - Reverse Leakage @ Vr: 800 µA @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| V12PM12-M3/86A |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1500+ | 22.55 грн |
| 3000+ | 21.52 грн |
| V12PM12-M3/86A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
Description: DIODE SCHOTTKY 120V 12A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 12A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 12 A
Current - Reverse Leakage @ Vr: 500 µA @ 120 V
на замовлення 8631 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 79.40 грн |
| 10+ | 51.43 грн |
| 100+ | 38.90 грн |
| 500+ | 28.51 грн |
| TZMB2V4-GS08 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 2.4V 500MW SOD80
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 2.75 грн |
| 5000+ | 2.46 грн |
| TZMB2V4-GS08 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
Description: DIODE ZENER 2.4V 500MW SOD80
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 85 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Qualification: AEC-Q101
на замовлення 11449 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 23.40 грн |
| 21+ | 15.37 грн |
| 100+ | 7.50 грн |
| 500+ | 5.87 грн |
| 1000+ | 4.08 грн |
| BZM55B2V4-TR |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: MicroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 2.4V 500MW MICROMELF
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: MicroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 3.73 грн |
| 5000+ | 3.25 грн |
| BZM55B2V4-TR |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 2.4V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: MicroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE ZENER 2.4V 500MW MICROMELF
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 2.4 V
Impedance (Max) (Zzt): 600 Ohms
Supplier Device Package: MicroMELF
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6750 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 14.21 грн |
| 36+ | 9.01 грн |
| 100+ | 6.04 грн |
| 500+ | 4.32 грн |
| 1000+ | 3.87 грн |
| GBU4GL-6420E3/51 |
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Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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од. на суму грн.
| GBU4GL-6420M3/51 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: BRIDGE RECT 1PHASE 400V 3A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 3 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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В кошику
од. на суму грн.
| RS1PG-M3/84A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO220AA
Description: DIODE GEN PURP 400V 1A DO220AA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RS1PG-M3/84A |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 1A DO220AA
Description: DIODE GEN PURP 400V 1A DO220AA
на замовлення 8950 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| RS1PBHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Description: DIODE 100V 1A DO-220AA
товару немає в наявності
В кошику
од. на суму грн.
| RS1PBHM3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Description: DIODE 100V 1A DO-220AA
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В кошику
од. на суму грн.
| RS1PDHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Description: DIODE 100V 1A DO-220AA
товару немає в наявності
В кошику
од. на суму грн.
| RS1PGHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Description: DIODE 100V 1A DO-220AA
товару немає в наявності
В кошику
од. на суму грн.
| RS1PGHM3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Description: DIODE 100V 1A DO-220AA
товару немає в наявності
В кошику
од. на суму грн.
| RS1PJHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Description: DIODE 100V 1A DO-220AA
товару немає в наявності
В кошику
од. на суму грн.
| RS1PJHM3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE 100V 1A DO-220AA
Description: DIODE 100V 1A DO-220AA
товару немає в наявності
В кошику
од. на суму грн.
| VS-50WQ04FNTR-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5.5A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 405pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Description: DIODE SCHOTTKY 40V 5.5A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 405pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
на замовлення 1550 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| VS-50WQ04FNTR-M3 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 5.5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 405pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
Description: DIODE SCHOTTKY 40V 5.5A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 405pF @ 5V, 1MHz
Current - Average Rectified (Io): 5.5A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 5 A
Current - Reverse Leakage @ Vr: 3 mA @ 40 V
на замовлення 2486 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 67.70 грн |
| 10+ | 42.50 грн |
| 100+ | 33.63 грн |
| 500+ | 24.47 грн |
| 1000+ | 22.19 грн |
| P6SMB39CAHE3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB39CAHE3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB39CAHM3_A/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB39CAHE3/52 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB39CAHE3/52 |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB39CAHM3_A/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB39CAHM3/H |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| P6SMB39CAHM3/I |
![]() |
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 33.3VWM 53.9VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 11.1A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.









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