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BZX884B18L-HG3-08 BZX884B18L-HG3-08 Vishay General Semiconductor - Diodes Division bzx884l-series.pdf Description: DIODE ZENER 18V 300MW DFN1006-2A
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DFN1006-2A
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BZX884B18L-HG3-08 BZX884B18L-HG3-08 Vishay General Semiconductor - Diodes Division bzx884l-series.pdf Description: DIODE ZENER 18V 300MW DFN1006-2A
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DFN1006-2A
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2349 шт:
термін постачання 21-31 дні (днів)
25+13.82 грн
36+9.31 грн
100+4.03 грн
500+3.57 грн
1000+3.30 грн
2000+3.27 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
BZX884B18L-G3-08 BZX884B18L-G3-08 Vishay General Semiconductor - Diodes Division bzx884l-series.pdf Description: DIODE ZENER 18V 300MW DFN1006-2A
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DFN1006-2A
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+2.46 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BZX884B18L-G3-08 BZX884B18L-G3-08 Vishay General Semiconductor - Diodes Division bzx884l-series.pdf Description: DIODE ZENER 18V 300MW DFN1006-2A
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DFN1006-2A
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
на замовлення 21135 шт:
термін постачання 21-31 дні (днів)
25+13.82 грн
39+8.65 грн
100+3.73 грн
500+3.30 грн
1000+3.03 грн
2000+3.00 грн
5000+2.92 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SMC5K30CA-M3/H SMC5K30CA-M3/H Vishay General Semiconductor - Diodes Division Description: TVS DIODE 30VWM 48.4VC DO214AB
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SMC5K30CA-M3/H SMC5K30CA-M3/H Vishay General Semiconductor - Diodes Division Description: TVS DIODE 30VWM 48.4VC DO214AB
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SMC5K54CA-M3/H SMC5K54CA-M3/H Vishay General Semiconductor - Diodes Division Description: TVS DIODE 54VWM 87.1VC DO214AB
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SMC5K54CA-M3/H SMC5K54CA-M3/H Vishay General Semiconductor - Diodes Division Description: TVS DIODE 54VWM 87.1VC DO214AB
на замовлення 1670 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BY229B-200-E3/81 BY229B-200-E3/81 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-200HE3/81 BY229B-200HE3/81 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-400-E3/81 BY229B-400-E3/81 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 400V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-400HE3/81 BY229B-400HE3/81 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 400V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-600-E3/81 BY229B-600-E3/81 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-600HE3/81 BY229B-600HE3/81 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-800-E3/81 BY229B-800-E3/81 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 800V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-800HE3/81 BY229B-800HE3/81 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 800V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BY229-200-E3/45 BY229-200-E3/45 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229-200HE3/45 BY229-200HE3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229-600-E3/45 BY229-600-E3/45 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229-600HE3/45 BY229-600HE3/45 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229-800-E3/45 BY229-800-E3/45 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 800V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229-800HE3/45 BY229-800HE3/45 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 800V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-200-E3/45 BY229B-200-E3/45 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-200HE3/45 BY229B-200HE3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-400-E3/45 BY229B-400-E3/45 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 400V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-400HE3/45 BY229B-400HE3/45 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 400V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-600-E3/45 BY229B-600-E3/45 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-600HE3/45 BY229B-600HE3/45 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-800-E3/45 BY229B-800-E3/45 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 800V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-800HE3/45 BY229B-800HE3/45 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 800V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BY229X-200-E3/45 BY229X-200-E3/45 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 200V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229X-200HE3/45 BY229X-200HE3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 200V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229X-400-E3/45 BY229X-400-E3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 400V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229X-400HE3/45 BY229X-400HE3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 400V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229X-600-E3/45 BY229X-600-E3/45 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229X-600HE3/45 BY229X-600HE3/45 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229X-800-E3/45 BY229X-800-E3/45 Vishay General Semiconductor - Diodes Division BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf Description: DIODE STANDARD 800V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229X-800HE3/45 BY229X-800HE3/45 Vishay General Semiconductor - Diodes Division BY229(X,B)-200%20-%20BY229(X,B)-800.pdf Description: DIODE GEN PURP 800V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
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BYVB32-200HE3_A/I BYVB32-200HE3_A/I Vishay General Semiconductor - Diodes Division byv32.pdf Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BYVB32-200HE3_A/P BYVB32-200HE3_A/P Vishay General Semiconductor - Diodes Division byv32.pdf Description: DIODE ARRAY GP 200V 18A TO263AB
товару немає в наявності
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SMAJ60A-E3/5A SMAJ60A-E3/5A Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 60VWM 96.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
SMAJ60A-E3/5A SMAJ60A-E3/5A Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 60VWM 96.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 2832 шт:
термін постачання 21-31 дні (днів)
15+24.18 грн
22+15.63 грн
100+6.54 грн
500+5.86 грн
1000+5.39 грн
Мінімальне замовлення: 15
В кошику  од. на суму  грн.
ES07D-GS18 ES07D-GS18 Vishay General Semiconductor - Diodes Division es07b.pdf Description: DIODE STD 200V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)
10000+6.72 грн
20000+6.28 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
ES07D-GS18 ES07D-GS18 Vishay General Semiconductor - Diodes Division es07b.pdf Description: DIODE STD 200V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 163935 шт:
термін постачання 21-31 дні (днів)
40+8.64 грн
44+7.65 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
EGP31F-E3/D Vishay General Semiconductor - Diodes Division egp31abcdfg.pdf Description: DIODE GEN PURP 300V 3A DO201AD
товару немає в наявності
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EGP51F-E3/D Vishay General Semiconductor - Diodes Division EGP51x.pdf Description: DIODE GEN PURP 300V 5A DO201AD
товару немає в наявності
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SMAJ90AHM3_A/H SMAJ90AHM3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ90AHM3_A/I SMAJ90AHM3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SMAJ90AHE3_A/I SMAJ90AHE3_A/I Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SMAJ90AHE3_A/H SMAJ90AHE3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PLZ3V3A-HG3_A/H PLZ3V3A-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 3.27V 960MW DO219AC
на замовлення 22165 шт:
термін постачання 21-31 дні (днів)
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MBRB1645HE3_B/I MBRB1645HE3_B/I Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
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MBRB1645HE3_B/P MBRB1645HE3_B/P Vishay General Semiconductor - Diodes Division mbrf16xx.pdf Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
товару немає в наявності
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SMCJ6.0AHM3_A/H SMCJ6.0AHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 6VWM 10.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 145.6A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SMCJ6.0AHM3_A/I SMCJ6.0AHM3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 6VWM 10.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 145.6A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SMCJ6.0AHE3_A/H SMCJ6.0AHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 6VWM 10.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 145.6A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SMCJ6.0AHE3_A/I SMCJ6.0AHE3_A/I Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 6VWM 10.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 145.6A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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PLZ6V2B-HG3_A/H PLZ6V2B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 6.12V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±2.53%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
4500+4.42 грн
9000+3.84 грн
13500+2.67 грн
Мінімальне замовлення: 4500
В кошику  од. на суму  грн.
PLZ6V2B-HG3_A/H PLZ6V2B-HG3_A/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 6.12V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±2.53%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
на замовлення 22862 шт:
термін постачання 21-31 дні (днів)
23+15.54 грн
33+10.31 грн
100+4.22 грн
500+3.77 грн
1000+3.59 грн
2000+3.40 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
CS2G-E3/H Vishay General Semiconductor - Diodes Division cs2dgjkm.pdf Description: DIODE GEN PURP 400V 2A DO214AA
товару немає в наявності
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BZX884B18L-HG3-08 bzx884l-series.pdf
BZX884B18L-HG3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 300MW DFN1006-2A
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DFN1006-2A
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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BZX884B18L-HG3-08 bzx884l-series.pdf
BZX884B18L-HG3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 300MW DFN1006-2A
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DFN1006-2A
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2349 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+13.82 грн
36+9.31 грн
100+4.03 грн
500+3.57 грн
1000+3.30 грн
2000+3.27 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
BZX884B18L-G3-08 bzx884l-series.pdf
BZX884B18L-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 300MW DFN1006-2A
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DFN1006-2A
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.46 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
BZX884B18L-G3-08 bzx884l-series.pdf
BZX884B18L-G3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 300MW DFN1006-2A
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DFN1006-2A
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
на замовлення 21135 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+13.82 грн
39+8.65 грн
100+3.73 грн
500+3.30 грн
1000+3.03 грн
2000+3.00 грн
5000+2.92 грн
Мінімальне замовлення: 25
В кошику  од. на суму  грн.
SMC5K30CA-M3/H
SMC5K30CA-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC DO214AB
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SMC5K30CA-M3/H
SMC5K30CA-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC DO214AB
на замовлення 1700 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SMC5K54CA-M3/H
SMC5K54CA-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 54VWM 87.1VC DO214AB
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
SMC5K54CA-M3/H
SMC5K54CA-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 54VWM 87.1VC DO214AB
на замовлення 1670 шт:
термін постачання 21-31 дні (днів)
В кошику  од. на суму  грн.
BY229B-200-E3/81 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229B-200-E3/81
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
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BY229B-200HE3/81 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229B-200HE3/81
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-400-E3/81 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229B-400-E3/81
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-400HE3/81 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229B-400HE3/81
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-600-E3/81 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229B-600-E3/81
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-600HE3/81 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229B-600HE3/81
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-800-E3/81 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229B-800-E3/81
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-800HE3/81 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229B-800HE3/81
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 8A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BY229-200-E3/45 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229-200-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229-200HE3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229-200HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229-600-E3/45 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229-600-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229-600HE3/45 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229-600HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229-800-E3/45 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229-800-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
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BY229-800HE3/45 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229-800HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-200-E3/45 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229B-200-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-200HE3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229B-200HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-400-E3/45 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229B-400-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-400HE3/45 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229B-400HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
BY229B-600-E3/45 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229B-600-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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BY229B-600HE3/45 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229B-600HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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BY229B-800-E3/45 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229B-800-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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BY229B-800HE3/45 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229B-800HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Grade: Automotive
Qualification: AEC-Q101
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BY229X-200-E3/45 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229X-200-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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BY229X-200HE3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229X-200HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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BY229X-400-E3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229X-400-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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BY229X-400HE3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229X-400HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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BY229X-600-E3/45 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229X-600-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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BY229X-600HE3/45 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229X-600HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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BY229X-800-E3/45 BY229%28X%2CB%29-200%20-%20BY229%28X%2CB%29-800.pdf
BY229X-800-E3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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BY229X-800HE3/45 BY229(X,B)-200%20-%20BY229(X,B)-800.pdf
BY229X-800HE3/45
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 8A ITO220AC
Packaging: Tube
Package / Case: TO-220-2 Full Pack, Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 145 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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BYVB32-200HE3_A/I byv32.pdf
BYVB32-200HE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 18A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 18A
Supplier Device Package: TO-263AB (D²PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
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BYVB32-200HE3_A/P byv32.pdf
BYVB32-200HE3_A/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 18A TO263AB
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SMAJ60A-E3/5A smaj50a.pdf
SMAJ60A-E3/5A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 60VWM 96.8VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 400W
Power Line Protection: No
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SMAJ60A-E3/5A smaj50a.pdf
SMAJ60A-E3/5A
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 60VWM 96.8VC DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.1A
Voltage - Reverse Standoff (Typ): 60V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 66.7V
Voltage - Clamping (Max) @ Ipp: 96.8V
Power - Peak Pulse: 400W
Power Line Protection: No
на замовлення 2832 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
15+24.18 грн
22+15.63 грн
100+6.54 грн
500+5.86 грн
1000+5.39 грн
Мінімальне замовлення: 15
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ES07D-GS18 es07b.pdf
ES07D-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 200V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 160000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+6.72 грн
20000+6.28 грн
Мінімальне замовлення: 10000
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ES07D-GS18 es07b.pdf
ES07D-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 200V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Qualification: AEC-Q101
на замовлення 163935 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
40+8.64 грн
44+7.65 грн
Мінімальне замовлення: 40
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EGP31F-E3/D egp31abcdfg.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 3A DO201AD
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EGP51F-E3/D EGP51x.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 300V 5A DO201AD
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SMAJ90AHM3_A/H smaj50a.pdf
SMAJ90AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ90AHM3_A/I smaj50a.pdf
SMAJ90AHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ90AHE3_A/I smaj50a.pdf
SMAJ90AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ90AHE3_A/H smaj50a.pdf
SMAJ90AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 90VWM 146VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 2.1A
Voltage - Reverse Standoff (Typ): 90V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 100V
Voltage - Clamping (Max) @ Ipp: 146V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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PLZ3V3A-HG3_A/H plzseries.pdf
PLZ3V3A-HG3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.27V 960MW DO219AC
на замовлення 22165 шт:
термін постачання 21-31 дні (днів)
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MBRB1645HE3_B/I
MBRB1645HE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 1400pF @ 5V, 1MHz
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
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MBRB1645HE3_B/P mbrf16xx.pdf
MBRB1645HE3_B/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 16A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 16A
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 16 A
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Qualification: AEC-Q101
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SMCJ6.0AHM3_A/H smcj.pdf
SMCJ6.0AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6VWM 10.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 145.6A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ6.0AHM3_A/I smcj.pdf
SMCJ6.0AHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6VWM 10.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 145.6A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ6.0AHE3_A/H smcj.pdf
SMCJ6.0AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6VWM 10.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 145.6A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SMCJ6.0AHE3_A/I smcj.pdf
SMCJ6.0AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 6VWM 10.3VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 145.6A
Voltage - Reverse Standoff (Typ): 6V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.67V
Voltage - Clamping (Max) @ Ipp: 10.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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PLZ6V2B-HG3_A/H plzseries.pdf
PLZ6V2B-HG3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.12V 960MW DO219AC
Packaging: Tape & Reel (TR)
Tolerance: ±2.53%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4500+4.42 грн
9000+3.84 грн
13500+2.67 грн
Мінімальне замовлення: 4500
В кошику  од. на суму  грн.
PLZ6V2B-HG3_A/H plzseries.pdf
PLZ6V2B-HG3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.12V 960MW DO219AC
Packaging: Cut Tape (CT)
Tolerance: ±2.53%
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.12 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-219AC (microSMF)
Grade: Automotive
Power - Max: 960 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Qualification: AEC-Q101
на замовлення 22862 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
23+15.54 грн
33+10.31 грн
100+4.22 грн
500+3.77 грн
1000+3.59 грн
2000+3.40 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
CS2G-E3/H cs2dgjkm.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 400V 2A DO214AA
товару немає в наявності
В кошику  од. на суму  грн.
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