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MUR420-M3/54 MUR420-M3/54 Vishay General Semiconductor - Diodes Division mur420.pdf Description: DIODE STANDARD 200V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 17385 шт:
термін постачання 21-31 дні (днів)
4+103.58 грн
10+63.00 грн
100+41.83 грн
500+30.73 грн
Мінімальне замовлення: 4
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SMCG43A-E3/57T SMCG43A-E3/57T Vishay General Semiconductor - Diodes Division smcg.pdf Description: TVS DIODE 43VWM 69.4VC DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SMCG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
850+34.53 грн
Мінімальне замовлення: 850
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SMCG43A-E3/57T SMCG43A-E3/57T Vishay General Semiconductor - Diodes Division smcg.pdf Description: TVS DIODE 43VWM 69.4VC DO215AB
Packaging: Cut Tape (CT)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SMCG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 1293 шт:
термін постачання 21-31 дні (днів)
5+64.64 грн
10+50.40 грн
100+39.23 грн
Мінімальне замовлення: 5
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BYS10-25HE3_A/I BYS10-25HE3_A/I Vishay General Semiconductor - Diodes Division bys10.pdf Description: DIODE SCHOTTKY 25V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BYS10-25HE3_A/H Vishay General Semiconductor - Diodes Division bys10.pdf Description: DIODE SCHOTTKY 25V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BYS10-35HE3_A/I Vishay General Semiconductor - Diodes Division bys10.pdf Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
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BYS10-35HE3_A/I Vishay General Semiconductor - Diodes Division bys10.pdf Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
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BYG20JHE3_A/I BYG20JHE3_A/I Vishay General Semiconductor - Diodes Division byg20d.pdf Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
7500+7.64 грн
Мінімальне замовлення: 7500
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6DFN24A-M3/I 6DFN24A-M3/I Vishay General Semiconductor - Diodes Division 6dfn12athru6dfn51a.pdf Description: TVS DIODE 20.5VWM 33.2V DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.1A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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6DFN24A-M3/I 6DFN24A-M3/I Vishay General Semiconductor - Diodes Division 6dfn12athru6dfn51a.pdf Description: TVS DIODE 20.5VWM 33.2V DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.1A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 13661 шт:
термін постачання 21-31 дні (днів)
12+26.48 грн
18+17.10 грн
100+11.55 грн
500+9.17 грн
Мінімальне замовлення: 12
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TPSMP24AHM3_A/I TPSMP24AHM3_A/I Vishay General Semiconductor - Diodes Division tpsmp68.pdf Description: TVS DIODE 20.5VWM 33.2VC DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-220AA (SMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+9.09 грн
Мінімальне замовлення: 10000
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TPSMP24AHM3_A/I TPSMP24AHM3_A/I Vishay General Semiconductor - Diodes Division tpsmp68.pdf Description: TVS DIODE 20.5VWM 33.2VC DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-220AA (SMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10+31.15 грн
12+25.20 грн
100+17.50 грн
500+12.82 грн
1000+10.42 грн
2000+9.32 грн
5000+8.70 грн
Мінімальне замовлення: 10
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T6N24AHM3/I T6N24AHM3/I Vishay General Semiconductor - Diodes Division t6n12athrut6n51a.pdf Description: LOW-PROFILE VERSION 600 W UNI-DI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 18.1A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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T6N24AHM3/I T6N24AHM3/I Vishay General Semiconductor - Diodes Division t6n12athrut6n51a.pdf Description: LOW-PROFILE VERSION 600 W UNI-DI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 18.1A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13000 шт:
термін постачання 21-31 дні (днів)
7+49.84 грн
11+29.92 грн
100+19.22 грн
500+13.71 грн
1000+12.31 грн
2000+11.13 грн
5000+9.69 грн
Мінімальне замовлення: 7
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VS-GT150TS065S VS-GT150TS065S Vishay General Semiconductor - Diodes Division vsgt150ts065s.pdf Description: IGBT MOD 650V 372A INTA-PAK IGBT
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.32V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK IGBT
IGBT Type: Trench
Current - Collector (Ic) (Max): 372 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 789 W
Current - Collector Cutoff (Max): 150 µA
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
1+6421.21 грн
15+5065.31 грн
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TZX9V1D-TAP TZX9V1D-TAP Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 9.1V 500MW DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Grade: Automotive
Qualification: AEC-Q101
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TZX9V1D-TAP TZX9V1D-TAP Vishay General Semiconductor - Diodes Division tzxserie.pdf Description: DIODE ZENER 9.1V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
10000+2.39 грн
20000+2.08 грн
30000+1.73 грн
Мінімальне замовлення: 10000
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10CTQ150 10CTQ150 Vishay General Semiconductor - Diodes Division 10CTQ150.pdf description Description: DIODE ARR SCHOTT 150V 5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
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P4SMA82CAHE3_A/I P4SMA82CAHE3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 70.1VWM 113V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE170AHE3_B/C 1.5KE170AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: 1.5KW,170V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE170CAHE3_B/C 1.5KE170CAHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: 1.5KW,170V 5%,BIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VS-3C08EV07T-M3/I VS-3C08EV07T-M3/I Vishay General Semiconductor - Diodes Division vs-3c08ev07t-m3.pdf Description: DIODE SIL CARB 650V 8A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
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VS-3C08EV07T-M3/I VS-3C08EV07T-M3/I Vishay General Semiconductor - Diodes Division vs-3c08ev07t-m3.pdf Description: DIODE SIL CARB 650V 8A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
на замовлення 4263 шт:
термін постачання 21-31 дні (днів)
2+228.97 грн
10+158.92 грн
100+120.98 грн
500+101.97 грн
Мінімальне замовлення: 2
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1.5KE180AHE3_B/C 1.5KE180AHE3_B/C Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 154VWM 246VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VS-GT90DA120U Vishay General Semiconductor - Diodes Division vs-gt90da120u.pdf Description: IGBT MOD 1200V 169A 781W SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 169 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 781 W
Current - Collector Cutoff (Max): 100 µA
на замовлення 218 шт:
термін постачання 21-31 дні (днів)
1+3304.45 грн
10+2397.39 грн
100+2111.34 грн
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VS-T90RIA100 VS-T90RIA100 Vishay General Semiconductor - Diodes Division vs-t50hflseries.pdf Description: SCR MODULE 1KV 141A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1780A, 1870A
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 90 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 141 A
Voltage - Off State: 1 kV
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
1+2700.10 грн
10+1941.56 грн
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VS-GT90DA60U VS-GT90DA60U Vishay General Semiconductor - Diodes Division vs-gt90da60u.pdf Description: MODULES IGBT - SOT-227 IGBT
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 146 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 446 W
Current - Collector Cutoff (Max): 100 µA
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P6SMB160AHE3_B/I P6SMB160AHE3_B/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 136VWM 219VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB160AHM3_B/I P6SMB160AHM3_B/I Vishay General Semiconductor - Diodes Division p6smb.pdf Description: TVS DIODE 136VWM 219VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB160AHM3_B/H P6SMB160AHM3_B/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,160V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB160AHE3_B/H P6SMB160AHE3_B/H Vishay General Semiconductor - Diodes Division p6smb.pdf Description: 600W,160V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ7.0AHE3_A/H SMAJ7.0AHE3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 7VWM 12VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
1800+9.26 грн
3600+8.21 грн
5400+7.87 грн
Мінімальне замовлення: 1800
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SMAJ10AHM3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 10VWM 17VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 23.5A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
1800+11.15 грн
3600+9.75 грн
5400+9.25 грн
Мінімальне замовлення: 1800
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5KP100AHE3_A/C 5KP100AHE3_A/C Vishay General Semiconductor - Diodes Division 5kp8_5a.pdf Description: TVS DIODE 100VWM 162VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 30.9A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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5KP10AHE3_A/C 5KP10AHE3_A/C Vishay General Semiconductor - Diodes Division 5kp8_5a.pdf Description: TVS DIODE 10VWM 17VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 294A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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V10PL63-M3/I V10PL63-M3/I Vishay General Semiconductor - Diodes Division v10pl63.pdf Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
на замовлення 5852 шт:
термін постачання 21-31 дні (днів)
5+71.65 грн
10+42.75 грн
100+27.95 грн
500+20.26 грн
1000+18.34 грн
2000+16.72 грн
Мінімальне замовлення: 5
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V10PL63-M3/I V10PL63-M3/I Vishay General Semiconductor - Diodes Division v10pl63.pdf Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
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V10PL63-M3/H V10PL63-M3/H Vishay General Semiconductor - Diodes Division v10pl63.pdf Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
на замовлення 2040 шт:
термін постачання 21-31 дні (днів)
7+47.51 грн
10+37.35 грн
100+27.95 грн
500+20.26 грн
Мінімальне замовлення: 7
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V10PL63-M3/H V10PL63-M3/H Vishay General Semiconductor - Diodes Division v10pl63.pdf Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
1500+14.81 грн
Мінімальне замовлення: 1500
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V10PL63HM3/H V10PL63HM3/H Vishay General Semiconductor - Diodes Division v10pl63.pdf Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1464 шт:
термін постачання 21-31 дні (днів)
6+59.19 грн
10+41.55 грн
100+32.70 грн
500+23.85 грн
Мінімальне замовлення: 6
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V10PL63HM3/H V10PL63HM3/H Vishay General Semiconductor - Diodes Division v10pl63.pdf Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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V10PL63HM3/I V10PL63HM3/I Vishay General Semiconductor - Diodes Division v10pl63.pdf Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5512 шт:
термін постачання 21-31 дні (днів)
4+81.77 грн
10+49.65 грн
100+32.70 грн
500+23.85 грн
1000+21.65 грн
2000+19.79 грн
Мінімальне замовлення: 4
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V10PL63HM3/I V10PL63HM3/I Vishay General Semiconductor - Diodes Division v10pl63.pdf Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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V8P10-M3/86A V8P10-M3/86A Vishay General Semiconductor - Diodes Division v8p10.pdf Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
1500+18.35 грн
3000+17.50 грн
4500+16.80 грн
Мінімальне замовлення: 1500
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V8P10HM3_A/I V8P10HM3_A/I Vishay General Semiconductor - Diodes Division v8p10.pdf Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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V8P10HM3_A/I V8P10HM3_A/I Vishay General Semiconductor - Diodes Division v8p10.pdf Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6197 шт:
термін постачання 21-31 дні (днів)
4+79.44 грн
10+48.00 грн
100+31.43 грн
500+22.80 грн
1000+20.64 грн
2000+18.83 грн
Мінімальне замовлення: 4
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VX8045PW-M3/P VX8045PW-M3/P Vishay General Semiconductor - Diodes Division vx8045pw.pdf Description: DIODE ARR SCHOTT 45V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 40 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 45 V
Qualification: AEC-Q101
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VX8045PWHM3/P VX8045PWHM3/P Vishay General Semiconductor - Diodes Division vx8045pw.pdf Description: DIODE ARR SCHOTT 45V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 40 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 45 V
Qualification: AEC-Q101
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P4SMA91AHM3_A/H P4SMA91AHM3_A/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 77.8VWM 125VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA91AHM3_A/I P4SMA91AHM3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 77.8VWM 125VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA91AHE3_A/H P4SMA91AHE3_A/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 77.8VWM 125VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA91AHE3_A/I P4SMA91AHE3_A/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 77.8VWM 125VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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P4SMA91AHM3/H P4SMA91AHM3/H Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 77.8VWM 125VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA91AHM3/I P4SMA91AHM3/I Vishay General Semiconductor - Diodes Division p4sma.pdf Description: TVS DIODE 77.8VWM 125VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MSE1PJ-M3/I MSE1PJ-M3/I Vishay General Semiconductor - Diodes Division mse1pj.pdf Description: DIODE GEN PURP 600V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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SMAJ18AHM3_A/H Vishay General Semiconductor - Diodes Division smaj50a.pdf Description: TVS DIODE 18VWM 29.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
1800+11.01 грн
Мінімальне замовлення: 1800
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ES07B-GS08 ES07B-GS08 Vishay General Semiconductor - Diodes Division tf-es07b-gs08.pdf Description: DIODE STD 100V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
3000+7.09 грн
6000+6.22 грн
9000+5.91 грн
15000+5.32 грн
Мінімальне замовлення: 3000
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ES07B-GS08 ES07B-GS08 Vishay General Semiconductor - Diodes Division tf-es07b-gs08.pdf Description: DIODE STD 100V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
на замовлення 59053 шт:
термін постачання 21-31 дні (днів)
40+7.79 грн
Мінімальне замовлення: 40
В кошику  од. на суму  грн.
SM6T27AHE3_B/I SM6T27AHE3_B/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM6T27AHM3_B/I SM6T27AHM3_B/I Vishay General Semiconductor - Diodes Division sm6t.pdf Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MUR420-M3/54 mur420.pdf
MUR420-M3/54
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 4A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Current - Average Rectified (Io): 4A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 890 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 17385 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+103.58 грн
10+63.00 грн
100+41.83 грн
500+30.73 грн
Мінімальне замовлення: 4
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SMCG43A-E3/57T smcg.pdf
SMCG43A-E3/57T
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 69.4VC DO215AB
Packaging: Tape & Reel (TR)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SMCG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 850 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
850+34.53 грн
Мінімальне замовлення: 850
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SMCG43A-E3/57T smcg.pdf
SMCG43A-E3/57T
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 43VWM 69.4VC DO215AB
Packaging: Cut Tape (CT)
Package / Case: DO-215AB, SMC Gull Wing
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 21.6A
Voltage - Reverse Standoff (Typ): 43V
Supplier Device Package: SMCG (DO-215AB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 47.8V
Voltage - Clamping (Max) @ Ipp: 69.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
на замовлення 1293 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+64.64 грн
10+50.40 грн
100+39.23 грн
Мінімальне замовлення: 5
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BYS10-25HE3_A/I bys10.pdf
BYS10-25HE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BYS10-25HE3_A/H bys10.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 25V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 25 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BYS10-35HE3_A/I bys10.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
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BYS10-35HE3_A/I bys10.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 35V 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 35 V
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BYG20JHE3_A/I byg20d.pdf
BYG20JHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 600V 1.5A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7500+7.64 грн
Мінімальне замовлення: 7500
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6DFN24A-M3/I 6dfn12athru6dfn51a.pdf
6DFN24A-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2V DFN3820A
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.1A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
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6DFN24A-M3/I 6dfn12athru6dfn51a.pdf
6DFN24A-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2V DFN3820A
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 18.1A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
на замовлення 13661 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
12+26.48 грн
18+17.10 грн
100+11.55 грн
500+9.17 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
TPSMP24AHM3_A/I tpsmp68.pdf
TPSMP24AHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC DO220AA
Packaging: Tape & Reel (TR)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-220AA (SMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+9.09 грн
Мінімальне замовлення: 10000
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TPSMP24AHM3_A/I tpsmp68.pdf
TPSMP24AHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20.5VWM 33.2VC DO220AA
Packaging: Cut Tape (CT)
Package / Case: DO-220AA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 12A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DO-220AA (SMP)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+31.15 грн
12+25.20 грн
100+17.50 грн
500+12.82 грн
1000+10.42 грн
2000+9.32 грн
5000+8.70 грн
Мінімальне замовлення: 10
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T6N24AHM3/I t6n12athrut6n51a.pdf
T6N24AHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: LOW-PROFILE VERSION 600 W UNI-DI
Packaging: Tape & Reel (TR)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 18.1A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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T6N24AHM3/I t6n12athrut6n51a.pdf
T6N24AHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: LOW-PROFILE VERSION 600 W UNI-DI
Packaging: Cut Tape (CT)
Package / Case: 2-VDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 18.1A
Voltage - Reverse Standoff (Typ): 20.5V
Supplier Device Package: DFN3820A
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Voltage - Clamping (Max) @ Ipp: 33.2V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 13000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+49.84 грн
11+29.92 грн
100+19.22 грн
500+13.71 грн
1000+12.31 грн
2000+11.13 грн
5000+9.69 грн
Мінімальне замовлення: 7
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VS-GT150TS065S vsgt150ts065s.pdf
VS-GT150TS065S
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 650V 372A INTA-PAK IGBT
Packaging: Box
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.32V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: INT-A-PAK IGBT
IGBT Type: Trench
Current - Collector (Ic) (Max): 372 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 789 W
Current - Collector Cutoff (Max): 150 µA
на замовлення 15 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+6421.21 грн
15+5065.31 грн
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TZX9V1D-TAP tzxserie.pdf
TZX9V1D-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Grade: Automotive
Qualification: AEC-Q101
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TZX9V1D-TAP tzxserie.pdf
TZX9V1D-TAP
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 9.1V 500MW DO204AH
Packaging: Tape & Box (TB)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 6.8 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.39 грн
20000+2.08 грн
30000+1.73 грн
Мінімальне замовлення: 10000
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10CTQ150 description 10CTQ150.pdf
10CTQ150
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 150V 5A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 150 V
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P4SMA82CAHE3_A/I p4sma.pdf
P4SMA82CAHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 70.1VWM 113V DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.5A
Voltage - Reverse Standoff (Typ): 70.1V
Supplier Device Package: DO-214AC (SMA)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.9V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE170AHE3_B/C 15ke.pdf
1.5KE170AHE3_B/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: 1.5KW,170V 5%,UNIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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1.5KE170CAHE3_B/C 15ke.pdf
1.5KE170CAHE3_B/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: 1.5KW,170V 5%,BIDIR,AXIAL TVS
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.7A
Voltage - Reverse Standoff (Typ): 145V
Supplier Device Package: 1.5KE
Bidirectional Channels: 1
Voltage - Breakdown (Min): 162V
Voltage - Clamping (Max) @ Ipp: 234V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VS-3C08EV07T-M3/I vs-3c08ev07t-m3.pdf
VS-3C08EV07T-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 650V 8A SLIMDPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
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VS-3C08EV07T-M3/I vs-3c08ev07t-m3.pdf
VS-3C08EV07T-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SIL CARB 650V 8A SLIMDPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 340pF @ 1V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 90 µA @ 650 V
на замовлення 4263 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+228.97 грн
10+158.92 грн
100+120.98 грн
500+101.97 грн
Мінімальне замовлення: 2
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1.5KE180AHE3_B/C 15ke.pdf
1.5KE180AHE3_B/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 154VWM 246VC 1.5KE
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 6.1A
Voltage - Reverse Standoff (Typ): 154V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 171V
Voltage - Clamping (Max) @ Ipp: 246V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VS-GT90DA120U vs-gt90da120u.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: IGBT MOD 1200V 169A 781W SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 75A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 169 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 781 W
Current - Collector Cutoff (Max): 100 µA
на замовлення 218 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3304.45 грн
10+2397.39 грн
100+2111.34 грн
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VS-T90RIA100 vs-t50hflseries.pdf
VS-T90RIA100
Виробник: Vishay General Semiconductor - Diodes Division
Description: SCR MODULE 1KV 141A D-55
Packaging: Bulk
Package / Case: D-55 T-Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 200 mA
Current - Gate Trigger (Igt) (Max): 120 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 1780A, 1870A
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 90 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 141 A
Voltage - Off State: 1 kV
на замовлення 10 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2700.10 грн
10+1941.56 грн
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VS-GT90DA60U vs-gt90da60u.pdf
VS-GT90DA60U
Виробник: Vishay General Semiconductor - Diodes Division
Description: MODULES IGBT - SOT-227 IGBT
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 146 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 446 W
Current - Collector Cutoff (Max): 100 µA
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P6SMB160AHE3_B/I p6smb.pdf
P6SMB160AHE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 136VWM 219VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB160AHM3_B/I p6smb.pdf
P6SMB160AHM3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 136VWM 219VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB160AHM3_B/H p6smb.pdf
P6SMB160AHM3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,160V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P6SMB160AHE3_B/H p6smb.pdf
P6SMB160AHE3_B/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: 600W,160V 5%,UNIDIR,SMB TVS
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 2.7A
Voltage - Reverse Standoff (Typ): 136V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 152V
Voltage - Clamping (Max) @ Ipp: 219V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJ7.0AHE3_A/H smaj50a.pdf
SMAJ7.0AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 7VWM 12VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 33.3A
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 7.78V
Voltage - Clamping (Max) @ Ipp: 12V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+9.26 грн
3600+8.21 грн
5400+7.87 грн
Мінімальне замовлення: 1800
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SMAJ10AHM3_A/H smaj50a.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 23.5A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+11.15 грн
3600+9.75 грн
5400+9.25 грн
Мінімальне замовлення: 1800
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5KP100AHE3_A/C 5kp8_5a.pdf
5KP100AHE3_A/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 100VWM 162VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 30.9A
Voltage - Reverse Standoff (Typ): 100V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 111V
Voltage - Clamping (Max) @ Ipp: 162V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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5KP10AHE3_A/C 5kp8_5a.pdf
5KP10AHE3_A/C
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10VWM 17VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 294A
Voltage - Reverse Standoff (Typ): 10V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.1V
Voltage - Clamping (Max) @ Ipp: 17V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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V10PL63-M3/I v10pl63.pdf
V10PL63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
на замовлення 5852 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+71.65 грн
10+42.75 грн
100+27.95 грн
500+20.26 грн
1000+18.34 грн
2000+16.72 грн
Мінімальне замовлення: 5
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V10PL63-M3/I v10pl63.pdf
V10PL63-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
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V10PL63-M3/H v10pl63.pdf
V10PL63-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
на замовлення 2040 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7+47.51 грн
10+37.35 грн
100+27.95 грн
500+20.26 грн
Мінімальне замовлення: 7
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V10PL63-M3/H v10pl63.pdf
V10PL63-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+14.81 грн
Мінімальне замовлення: 1500
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V10PL63HM3/H v10pl63.pdf
V10PL63HM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1464 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
6+59.19 грн
10+41.55 грн
100+32.70 грн
500+23.85 грн
Мінімальне замовлення: 6
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V10PL63HM3/H v10pl63.pdf
V10PL63HM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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V10PL63HM3/I v10pl63.pdf
V10PL63HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5512 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+81.77 грн
10+49.65 грн
100+32.70 грн
500+23.85 грн
1000+21.65 грн
2000+19.79 грн
Мінімальне замовлення: 4
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V10PL63HM3/I v10pl63.pdf
V10PL63HM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 10A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 2100pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 10 A
Current - Reverse Leakage @ Vr: 250 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
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V8P10-M3/86A v8p10.pdf
V8P10-M3/86A
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1500+18.35 грн
3000+17.50 грн
4500+16.80 грн
Мінімальне замовлення: 1500
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V8P10HM3_A/I v8p10.pdf
V8P10HM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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V8P10HM3_A/I v8p10.pdf
V8P10HM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO277A
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 8 A
Current - Reverse Leakage @ Vr: 70 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 6197 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+79.44 грн
10+48.00 грн
100+31.43 грн
500+22.80 грн
1000+20.64 грн
2000+18.83 грн
Мінімальне замовлення: 4
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VX8045PW-M3/P vx8045pw.pdf
VX8045PW-M3/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 40 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 45 V
Qualification: AEC-Q101
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VX8045PWHM3/P vx8045pw.pdf
VX8045PWHM3/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 40A
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 40 A
Current - Reverse Leakage @ Vr: 1.4 mA @ 45 V
Qualification: AEC-Q101
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P4SMA91AHM3_A/H p4sma.pdf
P4SMA91AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 77.8VWM 125VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA91AHM3_A/I p4sma.pdf
P4SMA91AHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 77.8VWM 125VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA91AHE3_A/H p4sma.pdf
P4SMA91AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 77.8VWM 125VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA91AHE3_A/I p4sma.pdf
P4SMA91AHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 77.8VWM 125VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA91AHM3/H p4sma.pdf
P4SMA91AHM3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 77.8VWM 125VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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P4SMA91AHM3/I p4sma.pdf
P4SMA91AHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 77.8VWM 125VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 3.2A
Voltage - Reverse Standoff (Typ): 77.8V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 86.5V
Voltage - Clamping (Max) @ Ipp: 125V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MSE1PJ-M3/I mse1pj.pdf
MSE1PJ-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 1A MICROSMP
Packaging: Tape & Reel (TR)
Package / Case: MicroSMP
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: MicroSMP (DO-219AD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
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SMAJ18AHM3_A/H smaj50a.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 18VWM 29.2VC DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 13.7A
Voltage - Reverse Standoff (Typ): 18V
Supplier Device Package: DO-214AC (SMA)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20V
Voltage - Clamping (Max) @ Ipp: 29.2V
Power - Peak Pulse: 400W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1800 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1800+11.01 грн
Мінімальне замовлення: 1800
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ES07B-GS08 tf-es07b-gs08.pdf
ES07B-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 100V 500MA DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
на замовлення 57000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+7.09 грн
6000+6.22 грн
9000+5.91 грн
15000+5.32 грн
Мінімальне замовлення: 3000
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ES07B-GS08 tf-es07b-gs08.pdf
ES07B-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 100V 500MA DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 4V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 980 mV @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
на замовлення 59053 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
40+7.79 грн
Мінімальне замовлення: 40
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SM6T27AHE3_B/I sm6t.pdf
SM6T27AHE3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SM6T27AHM3_B/I sm6t.pdf
SM6T27AHM3_B/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 23.1VWM 37.5V DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 23.1V
Supplier Device Package: DO-214AA (SMB)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 25.7V
Voltage - Clamping (Max) @ Ipp: 37.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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