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BZT52C5V1-HE3_A-08 BZT52C5V1-HE3_A-08 Vishay General Semiconductor - Diodes Division bzt52.pdf Description: DIODE ZENER 5.1V 300MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
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1N4738A-T 1N4738A-T Vishay General Semiconductor - Diodes Division 1n4728a.pdf Description: DIODE ZENER 8.2V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: AEC-Q101
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MBRB2535CT MBRB2535CT Vishay General Semiconductor - Diodes Division MBRB25.pdf Description: DIODE ARR SCHOTT 35V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
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5KP150AHE3/51 5KP150AHE3/51 Vishay General Semiconductor - Diodes Division Description: TVS DIODE 150VWM 243VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 20.6A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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V8PA22HM3_A/H V8PA22HM3_A/H Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
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V5PA22HM3_A/I V5PA22HM3_A/I Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 200V 2.3A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Qualification: AEC-Q101
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V8PA22HM3_A/I V8PA22HM3_A/I Vishay General Semiconductor - Diodes Division Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
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1N4749A-T Vishay General Semiconductor - Diodes Division ds18007.pdf Description: DIODE ZENER 24V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
Qualification: AEC-Q101
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V60D45CHM3_A/I V60D45CHM3_A/I Vishay General Semiconductor - Diodes Division v60d45c.pdf Description: DIODE ARR SCHOTT 45V 30A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 45 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+78.78 грн
Мінімальне замовлення: 2000
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V60D45CHM3_A/I V60D45CHM3_A/I Vishay General Semiconductor - Diodes Division v60d45c.pdf Description: DIODE ARR SCHOTT 45V 30A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 45 V
Qualification: AEC-Q101
на замовлення 5124 шт:
термін постачання 21-31 дні (днів)
2+205.62 грн
10+142.88 грн
100+108.64 грн
500+82.83 грн
1000+76.68 грн
Мінімальне замовлення: 2
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V60DM45CHM3/I V60DM45CHM3/I Vishay General Semiconductor - Diodes Division v60dm45c.pdf Description: DIODE ARR SCHOTT 45V 30A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 45 V
Qualification: AEC-Q101
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V60DM45CHM3/I V60DM45CHM3/I Vishay General Semiconductor - Diodes Division v60dm45c.pdf Description: DIODE ARR SCHOTT 45V 30A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 45 V
Qualification: AEC-Q101
на замовлення 1745 шт:
термін постачання 21-31 дні (днів)
2+230.23 грн
10+143.72 грн
100+99.41 грн
500+75.51 грн
1000+69.79 грн
Мінімальне замовлення: 2
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SS15-E3/5AT SS15-E3/5AT Vishay General Semiconductor - Diodes Division ss12.pdf Description: DIODE SCHOTTKY 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
7500+4.36 грн
Мінімальне замовлення: 7500
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SS15-E3/5AT SS15-E3/5AT Vishay General Semiconductor - Diodes Division ss12.pdf Description: DIODE SCHOTTKY 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
9+35.73 грн
15+20.79 грн
100+11.37 грн
500+7.95 грн
1000+6.86 грн
2000+6.34 грн
Мінімальне замовлення: 9
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PLZ10C-G3/H PLZ10C-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 10V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
4500+2.57 грн
9000+2.41 грн
13500+2.33 грн
Мінімальне замовлення: 4500
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PLZ10C-G3/H PLZ10C-G3/H Vishay General Semiconductor - Diodes Division plzseries.pdf Description: DIODE ZENER 10V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
на замовлення 25752 шт:
термін постачання 21-31 дні (днів)
25+12.70 грн
36+8.56 грн
100+3.65 грн
500+3.28 грн
1000+3.01 грн
2000+2.98 грн
Мінімальне замовлення: 25
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S10CKHM3/I Vishay General Semiconductor - Diodes Division s10cgjkm.pdf Description: DIODE STANDARD 800V 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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8TQ100 8TQ100 Vishay General Semiconductor - Diodes Division 8TQ080-100(S)%20N0639%20REV.A.pdf description Description: DIODE SCHOTTKY 100V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
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8TQ100S 8TQ100S Vishay General Semiconductor - Diodes Division 8TQ.pdf description Description: DIODE SCHOTTKY 100V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
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TZMC13-GS18 TZMC13-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 13V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+2.50 грн
Мінімальне замовлення: 10000
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TZMC13-GS18 TZMC13-GS18 Vishay General Semiconductor - Diodes Division tzm.pdf Description: DIODE ZENER 13V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
22+15.08 грн
35+8.87 грн
100+5.52 грн
500+3.78 грн
1000+3.32 грн
2000+2.94 грн
5000+2.48 грн
Мінімальне замовлення: 22
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FEP30JP-M3/P FEP30JP-M3/P Vishay General Semiconductor - Diodes Division Description: DIODE ARRAY GP 600V 15A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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10BQ040 10BQ040 Vishay General Semiconductor - Diodes Division 10BQ040PbF.pdf description Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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KBU6G-M3/P KBU6G-M3/P Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 400V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 0.98 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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KBU6J-M3/P KBU6J-M3/P Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 600V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 0.98 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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KBU6K-M3/P KBU6K-M3/P Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 800V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 0.98 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MBRB745 MBRB745 Vishay General Semiconductor - Diodes Division mbr7xx.pdf Description: DIODE SCHOTTKY 45V 7.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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VB30202C-M3/4W VB30202C-M3/4W Vishay General Semiconductor - Diodes Division v30202c.pdf Description: DIODE ARR SCHOT 200V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
на замовлення 4813 шт:
термін постачання 21-31 дні (днів)
2+200.85 грн
50+95.12 грн
100+93.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
SMCJ15AHM3_A/H SMCJ15AHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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SMCJ15AHM3_A/H SMCJ15AHM3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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VS-2KBB10 VS-2KBB10 Vishay General Semiconductor - Diodes Division vs-2kbbseries.pdf Description: BRIDGE RECT 1P 100V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 487 шт:
термін постачання 21-31 дні (днів)
2+225.47 грн
10+140.90 грн
100+97.36 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
32CTQ030S 32CTQ030S Vishay General Semiconductor - Diodes Division 32CTQ%28S%2C-1%29.pdf Description: DIODE ARR SCHOTT 30V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
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KBL04-M3/P KBL04-M3/P Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 400V 4A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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KBL04-M3/A KBL04-M3/A Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 400V 4A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
товару немає в наявності
В кошику  од. на суму  грн.
SMCJ16CAHE3_A/H SMCJ16CAHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 16VWM 26VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 57.7A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)
850+34.61 грн
1700+30.54 грн
2550+29.13 грн
Мінімальне замовлення: 850
В кошику  од. на суму  грн.
SMCJ16CAHE3_A/H SMCJ16CAHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 16VWM 26VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 57.7A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)
3+112.73 грн
10+68.65 грн
100+45.68 грн
Мінімальне замовлення: 3
В кошику  од. на суму  грн.
SMCJ24AHE3_A/H SMCJ24AHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 38.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2550 шт:
термін постачання 21-31 дні (днів)
850+20.65 грн
1700+18.69 грн
Мінімальне замовлення: 850
В кошику  од. на суму  грн.
SMCJ24AHE3_A/H SMCJ24AHE3_A/H Vishay General Semiconductor - Diodes Division smcj.pdf Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 38.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
5+70.66 грн
10+54.05 грн
100+35.59 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
3.0C30CA-M3/H 3.0C30CA-M3/H Vishay General Semiconductor - Diodes Division 3_0c10ca-m3thru3_c120ca-m3.pdf Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
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VTVS12GSMF-M3-08 VTVS12GSMF-M3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 12.4VWM 20.1V DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 807pF @ 1MHz
Current - Peak Pulse (10/1000µs): 19.53A
Voltage - Reverse Standoff (Typ): 12.4V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.41V
Voltage - Clamping (Max) @ Ipp: 20.1V
Power - Peak Pulse: 400W
Power Line Protection: No
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VTVS12GSMF-M3-08 VTVS12GSMF-M3-08 Vishay General Semiconductor - Diodes Division vtvs3v3asmf.pdf Description: TVS DIODE 12.4VWM 20.1V DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 807pF @ 1MHz
Current - Peak Pulse (10/1000µs): 19.53A
Voltage - Reverse Standoff (Typ): 12.4V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.41V
Voltage - Clamping (Max) @ Ipp: 20.1V
Power - Peak Pulse: 400W
Power Line Protection: No
товару немає в наявності
В кошику  од. на суму  грн.
S3AFG-M3/I S3AFG-M3/I Vishay General Semiconductor - Diodes Division s3afg_s3afj.pdf Description: DIODE STANDARD 400V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.7 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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S3AFG-M3/I S3AFG-M3/I Vishay General Semiconductor - Diodes Division s3afg_s3afj.pdf Description: DIODE STANDARD 400V 3A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.7 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
на замовлення 13723 шт:
термін постачання 21-31 дні (днів)
11+30.96 грн
16+19.49 грн
100+12.48 грн
500+9.66 грн
1000+7.81 грн
2000+7.16 грн
5000+6.40 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
S3AFJ-M3/I S3AFJ-M3/I Vishay General Semiconductor - Diodes Division s3afg_s3afj.pdf Description: DIODE STANDARD 600V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.7 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
S3AFJ-M3/I S3AFJ-M3/I Vishay General Semiconductor - Diodes Division s3afg_s3afj.pdf Description: DIODE STANDARD 600V 3A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.7 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
на замовлення 12791 шт:
термін постачання 21-31 дні (днів)
11+30.96 грн
16+19.49 грн
100+12.48 грн
500+9.66 грн
1000+7.81 грн
2000+7.16 грн
5000+6.40 грн
Мінімальне замовлення: 11
В кошику  од. на суму  грн.
S3AFJHM3/I S3AFJHM3/I Vishay General Semiconductor - Diodes Division s3afg_s3afj.pdf Description: DIODE STANDARD 600V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.7 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
S3AFJHM3/I S3AFJHM3/I Vishay General Semiconductor - Diodes Division s3afg_s3afj.pdf Description: DIODE STANDARD 600V 3A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.7 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
на замовлення 13280 шт:
термін постачання 21-31 дні (днів)
10+34.14 грн
14+22.09 грн
100+17.48 грн
500+12.40 грн
1000+9.77 грн
2000+9.14 грн
5000+8.36 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
S3AFGHM3/I S3AFGHM3/I Vishay General Semiconductor - Diodes Division s3afg_s3afj.pdf Description: DIODE STANDARD 400V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.7 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
товару немає в наявності
В кошику  од. на суму  грн.
S3AFGHM3/I S3AFGHM3/I Vishay General Semiconductor - Diodes Division s3afg_s3afj.pdf Description: DIODE STANDARD 400V 3A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.7 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
на замовлення 12208 шт:
термін постачання 21-31 дні (днів)
10+34.14 грн
14+22.09 грн
100+17.48 грн
500+12.40 грн
1000+9.77 грн
2000+9.14 грн
5000+8.36 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
KBU8J-M3/P KBU8J-M3/P Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 600V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 0.98 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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KBU8J-M3/A KBU8J-M3/A Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 600V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 0.98 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
товару немає в наявності
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1N4753A-T Vishay General Semiconductor - Diodes Division 1N4728A-thru-1N4764A_Rev19-3.pdf Description: DIODE ZENER 36V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
Qualification: AEC-Q101
товару немає в наявності
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TZMC5V1-M-18 TZMC5V1-M-18 Vishay General Semiconductor - Diodes Division TZM-M.pdf Description: DIODE ZENER 5.1V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
10000+2.80 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
TZMC5V1-M-18 TZMC5V1-M-18 Vishay General Semiconductor - Diodes Division TZM-M.pdf Description: DIODE ZENER 5.1V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
19+17.47 грн
29+10.63 грн
100+6.64 грн
500+4.22 грн
1000+3.18 грн
2000+2.95 грн
5000+2.62 грн
Мінімальне замовлення: 19
В кошику  од. на суму  грн.
BZX84B6V8-HE3_A-08 BZX84B6V8-HE3_A-08 Vishay General Semiconductor - Diodes Division bzx84_series.pdf Description: DIODE ZENER 6.8V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
13+25.40 грн
21+15.06 грн
100+9.40 грн
500+6.49 грн
1000+5.06 грн
Мінімальне замовлення: 13
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BZT55C56-GS08 BZT55C56-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 56V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 135 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Qualification: AEC-Q101
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BZT55C56-GS08 BZT55C56-GS08 Vishay General Semiconductor - Diodes Division bzt55.pdf Description: DIODE ZENER 56V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 135 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Qualification: AEC-Q101
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SM15T39CAHE3_A/I SM15T39CAHE3_A/I Vishay General Semiconductor - Diodes Division sm15t.pdf Description: TVS DIODE 33.3VWM 53.9V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
3500+25.63 грн
Мінімальне замовлення: 3500
В кошику  од. на суму  грн.
SM15T39CAHE3_A/I SM15T39CAHE3_A/I Vishay General Semiconductor - Diodes Division sm15t.pdf Description: TVS DIODE 33.3VWM 53.9V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
4+80.18 грн
10+64.52 грн
100+44.37 грн
500+32.62 грн
1000+29.63 грн
Мінімальне замовлення: 4
В кошику  од. на суму  грн.
1.5KA13HE3/73 Vishay General Semiconductor - Diodes Division 1.5KA6.8%20thru%201.5KA47A.pdf Description: TVS DIODE 10.5VWM 19VC 1.5KA
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 78.9A
Voltage - Reverse Standoff (Typ): 10.5V
Supplier Device Package: 1.5kA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.7V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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BZT52C5V1-HE3_A-08 bzt52.pdf
BZT52C5V1-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 300MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 100 nA @ 800 mV
Qualification: AEC-Q101
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1N4738A-T 1n4728a.pdf
1N4738A-T
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 700 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 6 V
Qualification: AEC-Q101
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MBRB2535CT MBRB25.pdf
MBRB2535CT
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 35V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 35 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 30 A
Current - Reverse Leakage @ Vr: 200 µA @ 35 V
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5KP150AHE3/51
5KP150AHE3/51
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 150VWM 243VC P600
Packaging: Bulk
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 20.6A
Voltage - Reverse Standoff (Typ): 150V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 167V
Voltage - Clamping (Max) @ Ipp: 243V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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V8PA22HM3_A/H
V8PA22HM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
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V5PA22HM3_A/I
V5PA22HM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.3A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.3A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 5 A
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Qualification: AEC-Q101
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V8PA22HM3_A/I
V8PA22HM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 200V 2.4A DO221BC
Packaging: Tape & Reel (TR)
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Current - Average Rectified (Io): 2.4A
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Qualification: AEC-Q101
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1N4749A-T ds18007.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 24V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 750 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 18.2 V
Qualification: AEC-Q101
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V60D45CHM3_A/I v60d45c.pdf
V60D45CHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 30A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 45 V
Qualification: AEC-Q101
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+78.78 грн
Мінімальне замовлення: 2000
В кошику  од. на суму  грн.
V60D45CHM3_A/I v60d45c.pdf
V60D45CHM3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 30A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 30 A
Current - Reverse Leakage @ Vr: 2.5 mA @ 45 V
Qualification: AEC-Q101
на замовлення 5124 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+205.62 грн
10+142.88 грн
100+108.64 грн
500+82.83 грн
1000+76.68 грн
Мінімальне замовлення: 2
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V60DM45CHM3/I v60dm45c.pdf
V60DM45CHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 30A TO263AC
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 45 V
Qualification: AEC-Q101
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V60DM45CHM3/I v60dm45c.pdf
V60DM45CHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 45V 30A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 680 mV @ 30 A
Current - Reverse Leakage @ Vr: 1.1 mA @ 45 V
Qualification: AEC-Q101
на замовлення 1745 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+230.23 грн
10+143.72 грн
100+99.41 грн
500+75.51 грн
1000+69.79 грн
Мінімальне замовлення: 2
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SS15-E3/5AT ss12.pdf
SS15-E3/5AT
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
7500+4.36 грн
Мінімальне замовлення: 7500
В кошику  од. на суму  грн.
SS15-E3/5AT ss12.pdf
SS15-E3/5AT
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
на замовлення 7500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
9+35.73 грн
15+20.79 грн
100+11.37 грн
500+7.95 грн
1000+6.86 грн
2000+6.34 грн
Мінімальне замовлення: 9
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PLZ10C-G3/H plzseries.pdf
PLZ10C-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 500MW DO219AC
Tolerance: ±3%
Packaging: Tape & Reel (TR)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
на замовлення 18000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4500+2.57 грн
9000+2.41 грн
13500+2.33 грн
Мінімальне замовлення: 4500
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PLZ10C-G3/H plzseries.pdf
PLZ10C-G3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 500MW DO219AC
Tolerance: ±3%
Packaging: Cut Tape (CT)
Package / Case: DO-219AC
Mounting Type: Surface Mount
Operating Temperature: 150°C
Voltage - Zener (Nom) (Vz): 10 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-219AC (microSMF)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 200 nA @ 7 V
на замовлення 25752 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+12.70 грн
36+8.56 грн
100+3.65 грн
500+3.28 грн
1000+3.01 грн
2000+2.98 грн
Мінімальне замовлення: 25
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S10CKHM3/I s10cgjkm.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 10A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Standard
Capacitance @ Vr, F: 79pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Qualification: AEC-Q101
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8TQ100 description 8TQ080-100(S)%20N0639%20REV.A.pdf
8TQ100
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO220AC
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
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8TQ100S description 8TQ.pdf
8TQ100S
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 100V 8A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 8 A
Current - Reverse Leakage @ Vr: 550 µA @ 100 V
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TZMC13-GS18 tzm.pdf
TZMC13-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.50 грн
Мінімальне замовлення: 10000
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TZMC13-GS18 tzm.pdf
TZMC13-GS18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 26 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
22+15.08 грн
35+8.87 грн
100+5.52 грн
500+3.78 грн
1000+3.32 грн
2000+2.94 грн
5000+2.48 грн
Мінімальне замовлення: 22
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FEP30JP-M3/P
FEP30JP-M3/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 15A TO247AD
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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10BQ040 description 10BQ040PbF.pdf
10BQ040
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 40V 1A DO214AA
Packaging: Bulk
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
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KBU6G-M3/P
KBU6G-M3/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 0.98 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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KBU6J-M3/P
KBU6J-M3/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 0.98 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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KBU6K-M3/P
KBU6K-M3/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 6A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 6 A
Voltage - Forward (Vf) (Max) @ If: 0.98 V @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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MBRB745 mbr7xx.pdf
MBRB745
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 45V 7.5A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 7.5A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 7.5 A
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
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VB30202C-M3/4W v30202c.pdf
VB30202C-M3/4W
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 200V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 15 A
Current - Reverse Leakage @ Vr: 250 µA @ 200 V
на замовлення 4813 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+200.85 грн
50+95.12 грн
100+93.45 грн
Мінімальне замовлення: 2
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SMCJ15AHM3_A/H smcj.pdf
SMCJ15AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMCJ15AHM3_A/H smcj.pdf
SMCJ15AHM3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 24.4VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 61.5A
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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VS-2KBB10 vs-2kbbseries.pdf
VS-2KBB10
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 100V 1.9A 2KBB
Packaging: Bulk
Package / Case: 4-SIP, 2KBB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: 2KBB
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1.9 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.9 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
на замовлення 487 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+225.47 грн
10+140.90 грн
100+97.36 грн
Мінімальне замовлення: 2
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32CTQ030S 32CTQ%28S%2C-1%29.pdf
32CTQ030S
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 30V 15A TO263AB
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 15 A
Current - Reverse Leakage @ Vr: 1.75 mA @ 30 V
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KBL04-M3/P
KBL04-M3/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 4A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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KBL04-M3/A
KBL04-M3/A
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 400V 4A KBL
Packaging: Bulk
Package / Case: 4-SIP, KBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBL
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 4 A
Voltage - Forward (Vf) (Max) @ If: 0.95 V @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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SMCJ16CAHE3_A/H smcj.pdf
SMCJ16CAHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 26VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 57.7A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
850+34.61 грн
1700+30.54 грн
2550+29.13 грн
Мінімальне замовлення: 850
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SMCJ16CAHE3_A/H smcj.pdf
SMCJ16CAHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 16VWM 26VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 57.7A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3400 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+112.73 грн
10+68.65 грн
100+45.68 грн
Мінімальне замовлення: 3
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SMCJ24AHE3_A/H smcj.pdf
SMCJ24AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 38.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2550 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
850+20.65 грн
1700+18.69 грн
Мінімальне замовлення: 850
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SMCJ24AHE3_A/H smcj.pdf
SMCJ24AHE3_A/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 24VWM 38.9VC DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 38.6A
Voltage - Reverse Standoff (Typ): 24V
Supplier Device Package: DO-214AB (SMCJ)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 26.7V
Voltage - Clamping (Max) @ Ipp: 38.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5+70.66 грн
10+54.05 грн
100+35.59 грн
Мінімальне замовлення: 5
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3.0C30CA-M3/H 3_0c10ca-m3thru3_c120ca-m3.pdf
3.0C30CA-M3/H
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 30VWM 48.4VC DO214AB
Packaging: Bulk
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: Telecom
Current - Peak Pulse (10/1000µs): 62A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-214AB (SMC)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 3000W (3kW)
Power Line Protection: No
Grade: Automotive
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VTVS12GSMF-M3-08 vtvs3v3asmf.pdf
VTVS12GSMF-M3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12.4VWM 20.1V DO219AB
Packaging: Tape & Reel (TR)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 807pF @ 1MHz
Current - Peak Pulse (10/1000µs): 19.53A
Voltage - Reverse Standoff (Typ): 12.4V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.41V
Voltage - Clamping (Max) @ Ipp: 20.1V
Power - Peak Pulse: 400W
Power Line Protection: No
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VTVS12GSMF-M3-08 vtvs3v3asmf.pdf
VTVS12GSMF-M3-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 12.4VWM 20.1V DO219AB
Packaging: Cut Tape (CT)
Package / Case: DO-219AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 807pF @ 1MHz
Current - Peak Pulse (10/1000µs): 19.53A
Voltage - Reverse Standoff (Typ): 12.4V
Supplier Device Package: DO-219AB (SMF)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 14.41V
Voltage - Clamping (Max) @ Ipp: 20.1V
Power - Peak Pulse: 400W
Power Line Protection: No
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S3AFG-M3/I s3afg_s3afj.pdf
S3AFG-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.7 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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S3AFG-M3/I s3afg_s3afj.pdf
S3AFG-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.7 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
на замовлення 13723 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.96 грн
16+19.49 грн
100+12.48 грн
500+9.66 грн
1000+7.81 грн
2000+7.16 грн
5000+6.40 грн
Мінімальне замовлення: 11
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S3AFJ-M3/I s3afg_s3afj.pdf
S3AFJ-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.7 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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S3AFJ-M3/I s3afg_s3afj.pdf
S3AFJ-M3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 3A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.7 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
на замовлення 12791 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
11+30.96 грн
16+19.49 грн
100+12.48 грн
500+9.66 грн
1000+7.81 грн
2000+7.16 грн
5000+6.40 грн
Мінімальне замовлення: 11
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S3AFJHM3/I s3afg_s3afj.pdf
S3AFJHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.7 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
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S3AFJHM3/I s3afg_s3afj.pdf
S3AFJHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 3A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.7 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Qualification: AEC-Q101
на замовлення 13280 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+34.14 грн
14+22.09 грн
100+17.48 грн
500+12.40 грн
1000+9.77 грн
2000+9.14 грн
5000+8.36 грн
Мінімальне замовлення: 10
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S3AFGHM3/I s3afg_s3afj.pdf
S3AFGHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.7 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
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S3AFGHM3/I s3afg_s3afj.pdf
S3AFGHM3/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO221AC
Packaging: Cut Tape (CT)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.7 µs
Technology: Standard
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Qualification: AEC-Q101
на замовлення 12208 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10+34.14 грн
14+22.09 грн
100+17.48 грн
500+12.40 грн
1000+9.77 грн
2000+9.14 грн
5000+8.36 грн
Мінімальне замовлення: 10
В кошику  од. на суму  грн.
KBU8J-M3/P
KBU8J-M3/P
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 0.98 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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KBU8J-M3/A
KBU8J-M3/A
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 600V 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 0.98 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
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1N4753A-T 1N4728A-thru-1N4764A_Rev19-3.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 36V 1.3W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 1000 Ohms
Supplier Device Package: DO-41
Grade: Automotive
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 27.4 V
Qualification: AEC-Q101
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TZMC5V1-M-18 TZM-M.pdf
TZMC5V1-M-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
10000+2.80 грн
Мінімальне замовлення: 10000
В кошику  од. на суму  грн.
TZMC5V1-M-18 TZM-M.pdf
TZMC5V1-M-18
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 5.1V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 60 Ohms
Supplier Device Package: SOD-80 MiniMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 1 V
Qualification: AEC-Q101
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
19+17.47 грн
29+10.63 грн
100+6.64 грн
500+4.22 грн
1000+3.18 грн
2000+2.95 грн
5000+2.62 грн
Мінімальне замовлення: 19
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BZX84B6V8-HE3_A-08 bzx84_series.pdf
BZX84B6V8-HE3_A-08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.8V 300MW SOT23-3
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOT-23-3
Grade: Automotive
Power - Max: 300 mW
Current - Reverse Leakage @ Vr: 2 µA @ 4 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+25.40 грн
21+15.06 грн
100+9.40 грн
500+6.49 грн
1000+5.06 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
BZT55C56-GS08 bzt55.pdf
BZT55C56-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 500MW SOD80
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 135 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Qualification: AEC-Q101
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BZT55C56-GS08 bzt55.pdf
BZT55C56-GS08
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 56V 500MW SOD80
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-80 Variant
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 56 V
Impedance (Max) (Zzt): 135 Ohms
Supplier Device Package: SOD-80 QuadroMELF
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 43 V
Qualification: AEC-Q101
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SM15T39CAHE3_A/I sm15t.pdf
SM15T39CAHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3500+25.63 грн
Мінімальне замовлення: 3500
В кошику  од. на суму  грн.
SM15T39CAHE3_A/I sm15t.pdf
SM15T39CAHE3_A/I
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33.3VWM 53.9V DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 28A
Voltage - Reverse Standoff (Typ): 33.3V
Supplier Device Package: DO-214AB (SMCJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 37.1V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+80.18 грн
10+64.52 грн
100+44.37 грн
500+32.62 грн
1000+29.63 грн
Мінімальне замовлення: 4
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1.5KA13HE3/73 1.5KA6.8%20thru%201.5KA47A.pdf
Виробник: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 10.5VWM 19VC 1.5KA
Packaging: Tape & Box (TB)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 185°C (TJ)
Current - Peak Pulse (10/1000µs): 78.9A
Voltage - Reverse Standoff (Typ): 10.5V
Supplier Device Package: 1.5kA
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.7V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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