Продукция производителя vishay semiconductor diodes division

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Фото Наименование Техн. инф. Производитель Описание В наличии/под заказ
Цена
RGL34D-E3/98 RGL34D-E3/98 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 500MA DO213; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Current - Average Rectified (Io) : 500mA; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AA (GL34); Package / Case : DO-213AA (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 200V; Reverse Recovery Time (trr) : 150ns товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 257500 шт - цена и срок поставки
RGL34K-E3/98 RGL34K-E3/98 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 500MA DO213; Mounting Type : Surface Mount; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 800V; Reverse Recovery Time (trr) : 250ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Current - Average Rectified (Io) : 500mA; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR); Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AA (GL34); Package / Case : DO-213AA (Glass) под заказ 5000 шт
срок поставки 5-15 дня (дней)
под заказ 15190 шт - цена и срок поставки
2500+ 6.2 грн
5000+ 5.7 грн
BYS12-90HE3/TR BYS12-90HE3/TR htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE SCHOTTKY 90V 1.5A DO214AC; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 100µA @ 90V; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 750mV @ 1A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 90V; Diode Type : Schottky товар отсутствует, Вы можете сделать запрос добавив товар в корзину
SBYV26CHE3/73 SBYV26CHE3/73 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A DO204AL; Voltage - Forward (Vf) (Max) @ If : 2.5V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Standard; Part Status : Obsolete; Packaging : Tape & Box (TB); Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AL (DO-41); Mounting Type : Through Hole; Package / Case : DO-204AL, DO-41, Axial; Current - Reverse Leakage @ Vr : 5µA @ 600V; Reverse Recovery Time (trr) : 30ns; Speed : Fast Recovery =< 500ns, > 200mA (Io) товар отсутствует, Вы можете сделать запрос добавив товар в корзину
SBYV26CHE3/54 SBYV26CHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A DO204AL; Voltage - Forward (Vf) (Max) @ If : 2.5V @ 1A; Current - Average Rectified (Io) : 1A; Packaging : Tape & Reel (TR); Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AL (DO-41); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 600V; Reverse Recovery Time (trr) : 30ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Standard; Part Status : Obsolete товар отсутствует, Вы можете сделать запрос добавив товар в корзину
SSA34HE3/5AT SSA34HE3/5AT htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE SCHOTTKY 40V 3A DO214AC; Base Part Number : SSA34; Operating Temperature - Junction : -65°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Current - Reverse Leakage @ Vr : 200µA @ 40V; Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 490mV @ 3A; Current - Average Rectified (Io) : 3A; Voltage - DC Reverse (Vr) (Max) : 40V; Diode Type : Schottky; Part Status : Obsolete; Packaging : Tape & Reel (TR) товар отсутствует, Вы можете сделать запрос добавив товар в корзину
RGL34K-E3/83 RGL34K-E3/83 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 500MA DO213; Mounting Type : Surface Mount; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 800V; Reverse Recovery Time (trr) : 250ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - DC Reverse (Vr) (Max) : 800V; Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Current - Average Rectified (Io) : 500mA; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR); Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AA (GL34); Package / Case : DO-213AA (Glass) под заказ 8500 шт
срок поставки 5-15 дня (дней)
под заказ 17000 шт - цена и срок поставки
SS22-E3/5BT SS22-E3/5BT htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE SCHOTTKY 20V 2A DO214AA; Operating Temperature - Junction : -65°C ~ 125°C; Supplier Device Package : DO-214AA (SMB); Package / Case : DO-214AA, SMB; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 400µA @ 20V; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 500mV @ 2A; Current - Average Rectified (Io) : 2A; Voltage - DC Reverse (Vr) (Max) : 20V; Diode Type : Schottky товар отсутствует, Вы можете сделать запрос добавив товар в корзину
SS23-E3/5BT SS23-E3/5BT htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE SCHOTTKY 30V 2A DO214AA; Speed : Fast Recovery =< 500ns, > 200mA (Io); Operating Temperature - Junction : -65°C ~ 125°C; Supplier Device Package : DO-214AA (SMB); Package / Case : DO-214AA, SMB; Mounting Type : Surface Mount; Voltage - Forward (Vf) (Max) @ If : 500mV @ 2A; Current - Average Rectified (Io) : 2A; Voltage - DC Reverse (Vr) (Max) : 30V; Current - Reverse Leakage @ Vr : 400µA @ 30V; Diode Type : Schottky товар отсутствует, Вы можете сделать запрос добавив товар в корзину
SS24-E3/5BT SS24-E3/5BT htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE SCHOTTKY 40V 2A DO214AA; Operating Temperature - Junction : -65°C ~ 125°C; Supplier Device Package : DO-214AA (SMB); Package / Case : DO-214AA, SMB; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 400µA @ 40V; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 500mV @ 2A; Current - Average Rectified (Io) : 2A; Voltage - DC Reverse (Vr) (Max) : 40V; Diode Type : Schottky; Part Status : Active; Packaging : Tape & Reel (TR) товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 4048 шт - цена и срок поставки
ESH2PBHM3/85A ESH2PBHM3/85A htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 2A DO220AA; Operating Temperature - Junction : -55°C ~ 175°C; Supplier Device Package : DO-220AA (SMP); Package / Case : DO-220AA; Mounting Type : Surface Mount; Capacitance @ Vr, F : 25pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 1µA @ 100V; Reverse Recovery Time (trr) : 25ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 980mV @ 2A; Current - Average Rectified (Io) : 2A; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard товар отсутствует, Вы можете сделать запрос добавив товар в корзину
ESH2PCHM3/85A ESH2PCHM3/85A htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 150V 2A DO220AA; Current - Average Rectified (Io) : 2A; Voltage - DC Reverse (Vr) (Max) : 150V; Diode Type : Standard; Operating Temperature - Junction : -55°C ~ 175°C; Supplier Device Package : DO-220AA (SMP); Package / Case : DO-220AA; Mounting Type : Surface Mount; Capacitance @ Vr, F : 25pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 1µA @ 150V; Reverse Recovery Time (trr) : 25ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 980mV @ 2A товар отсутствует, Вы можете сделать запрос добавив товар в корзину
VS-11DQ10 VS-11DQ10 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE SCHOTTKY 100V 1.1A DO204AL; Operating Temperature - Junction : -40°C ~ 150°C; Supplier Device Package : DO-204AL (DO-41); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 500µA @ 100V; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 850mV @ 1A; Current - Average Rectified (Io) : 1.1A; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Schottky; Part Status : Obsolete; Packaging : Bulk товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BYS11-90HE3/TR BYS11-90HE3/TR htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE SCHOTTKY 90V 1.5A DO214AC; Packaging : Tape & Reel (TR); Part Status : Obsolete; Diode Type : Schottky; Voltage - DC Reverse (Vr) (Max) : 90V; Current - Average Rectified (Io) : 1.5A; Voltage - Forward (Vf) (Max) @ If : 750mV @ 1A; Speed : Fast Recovery =< 500ns, > 200mA (Io); Current - Reverse Leakage @ Vr : 100µA @ 90V; Mounting Type : Surface Mount; Package / Case : DO-214AC, SMA; Supplier Device Package : DO-214AC (SMA); Operating Temperature - Junction : -55°C ~ 150°C товар отсутствует, Вы можете сделать запрос добавив товар в корзину
US1J/1 US1J/1 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A DO214AC; Packaging : Bulk; Part Status : Obsolete; Diode Type : Standard; Voltage - DC Reverse (Vr) (Max) : 600V; Current - Average Rectified (Io) : 1A; Voltage - Forward (Vf) (Max) @ If : 1.7V @ 1A; Speed : Fast Recovery =< 500ns, > 200mA (Io); Reverse Recovery Time (trr) : 75ns; Current - Reverse Leakage @ Vr : 10µA @ 600V; Mounting Type : Surface Mount; Package / Case : DO-214AC, SMA; Supplier Device Package : DO-214AC (SMA); Operating Temperature - Junction : -65°C ~ 175°C товар отсутствует, Вы можете сделать запрос добавив товар в корзину
US1JHE3/61T US1JHE3/61T htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A DO214AC; Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Standard; Part Status : Obsolete; Packaging : Tape & Reel (TR); Current - Average Rectified (Io) : 1A; Voltage - Forward (Vf) (Max) @ If : 1.7V @ 1A; Speed : Fast Recovery =< 500ns, > 200mA (Io); Reverse Recovery Time (trr) : 75ns; Current - Reverse Leakage @ Vr : 10µA @ 600V; Capacitance @ Vr, F : 10pF @ 4V, 1MHz; Mounting Type : Surface Mount; Package / Case : DO-214AC, SMA; Supplier Device Package : DO-214AC (SMA); Operating Temperature - Junction : -55°C ~ 150°C товар отсутствует, Вы можете сделать запрос добавив товар в корзину
US1DHE3/61T US1DHE3/61T htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1A DO214AC; Packaging : Tape & Reel (TR); Part Status : Obsolete; Diode Type : Standard; Voltage - DC Reverse (Vr) (Max) : 200V; Current - Average Rectified (Io) : 1A; Voltage - Forward (Vf) (Max) @ If : 1V @ 1A; Speed : Fast Recovery =< 500ns, > 200mA (Io); Reverse Recovery Time (trr) : 50ns; Current - Reverse Leakage @ Vr : 10µA @ 200V; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Mounting Type : Surface Mount; Package / Case : DO-214AC, SMA; Supplier Device Package : DO-214AC (SMA); Operating Temperature - Junction : -55°C ~ 150°C; Base Part Number : US1D товар отсутствует, Вы можете сделать запрос добавив товар в корзину
US1GHE3/61T US1GHE3/61T htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 1A DO214AC; Current - Reverse Leakage @ Vr : 10µA @ 400V; Speed : Fast Recovery =< 500ns, > 200mA (Io); Reverse Recovery Time (trr) : 50ns; Voltage - Forward (Vf) (Max) @ If : 1V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard; Part Status : Obsolete; Packaging : Tape & Reel (TR); Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Mounting Type : Surface Mount; Package / Case : DO-214AC, SMA; Supplier Device Package : DO-214AC (SMA); Operating Temperature - Junction : -55°C ~ 150°C; Base Part Number : US1G товар отсутствует, Вы можете сделать запрос добавив товар в корзину
SSA24HE3/61T SSA24HE3/61T htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE SCHOTTKY 40V 2A DO214AC; Packaging : Tape & Reel (TR); Part Status : Obsolete; Voltage - Forward (Vf) (Max) @ If : 490mV @ 2A; Current - Reverse Leakage @ Vr : 200µA @ 40V; Diode Type : Schottky; Voltage - DC Reverse (Vr) (Max) : 40V; Current - Average Rectified (Io) : 2A; Speed : Fast Recovery =< 500ns, > 200mA (Io); Mounting Type : Surface Mount; Package / Case : DO-214AC, SMA; Supplier Device Package : DO-214AC (SMA); Operating Temperature - Junction : -65°C ~ 150°C; Base Part Number : SSA24 товар отсутствует, Вы можете сделать запрос добавив товар в корзину
ES1PB-M3/85A ES1PB-M3/85A htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 1A DO220AA; Mounting Type : Surface Mount; Capacitance @ Vr, F : 10pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 100V; Reverse Recovery Time (trr) : 25ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 920mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-220AA (SMP); Package / Case : DO-220AA товар отсутствует, Вы можете сделать запрос добавив товар в корзину
ES1PC-M3/85A ES1PC-M3/85A htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 150V 1A DO220AA; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-220AA (SMP); Package / Case : DO-220AA; Mounting Type : Surface Mount; Capacitance @ Vr, F : 10pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 150V; Reverse Recovery Time (trr) : 25ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 920mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 150V; Diode Type : Standard товар отсутствует, Вы можете сделать запрос добавив товар в корзину
ES1PD-M3/85A ES1PD-M3/85A htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1A DO220AA; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 920mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR); Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-220AA (SMP); Package / Case : DO-220AA; Mounting Type : Surface Mount; Capacitance @ Vr, F : 10pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 200V; Reverse Recovery Time (trr) : 25ns под заказ 30000 шт
срок поставки 5-15 дня (дней)
под заказ 30000 шт - цена и срок поставки
10000+ 7.25 грн
EGP10BEHE3/54 EGP10BEHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 1A DO204AL; Operating Temperature - Junction : -65°C ~ 150°C; Supplier Device Package : DO-204AL (DO-41); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 22pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 100V; Reverse Recovery Time (trr) : 50ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 950mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard товар отсутствует, Вы можете сделать запрос добавив товар в корзину
EGP10CEHE3/54 EGP10CEHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 150V 1A DO204AL; Operating Temperature - Junction : -65°C ~ 150°C; Supplier Device Package : DO-204AL (DO-41); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 22pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 150V; Reverse Recovery Time (trr) : 50ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 950mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 150V; Diode Type : Standard товар отсутствует, Вы можете сделать запрос добавив товар в корзину
EGP10DEHE3/54 EGP10DEHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1A DO204AL; Operating Temperature - Junction : -65°C ~ 150°C; Supplier Device Package : DO-204AL (DO-41); Current - Reverse Leakage @ Vr : 5µA @ 200V; Reverse Recovery Time (trr) : 50ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 950mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard; Part Status : Obsolete; Packaging : Tape & Reel (TR); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 22pF @ 4V, 1MHz товар отсутствует, Вы можете сделать запрос добавив товар в корзину
EGP10GE-E3/54 EGP10GE-E3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 1A DO204AL; Operating Temperature - Junction : -65°C ~ 150°C; Supplier Device Package : DO-204AL (DO-41); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 400V; Reverse Recovery Time (trr) : 50ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.25V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard; Packaging : Tape & Reel (TR); Part Status : Active под заказ 5500 шт
срок поставки 5-15 дня (дней)
под заказ 11000 шт - цена и срок поставки
5500+ 5.8 грн
FGP10BHE3/54 FGP10BHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 1A DO204AL; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AL (DO-41); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 25pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 2µA @ 100V; Reverse Recovery Time (trr) : 35ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 950mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard товар отсутствует, Вы можете сделать запрос добавив товар в корзину
FGP10CHE3/54 FGP10CHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 150V 1A DO204AL; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 150V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AL (DO-41); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 25pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 2µA @ 150V; Reverse Recovery Time (trr) : 35ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 950mV @ 1A товар отсутствует, Вы можете сделать запрос добавив товар в корзину
FGP10DHE3/54 FGP10DHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1A DO204AL; Capacitance @ Vr, F : 25pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 2µA @ 200V; Reverse Recovery Time (trr) : 35ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 950mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AL (DO-41); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole товар отсутствует, Вы можете сделать запрос добавив товар в корзину
GF1B-E3/5CA GF1B-E3/5CA htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 1A DO214BA; Current - Reverse Leakage @ Vr : 5µA @ 100V; Reverse Recovery Time (trr) : 2µs; Base Part Number : GF1B; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-214BA (GF1); Package / Case : DO-214BA; Mounting Type : Surface Mount; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR) под заказ 6500 шт
срок поставки 5-15 дня (дней)
6500+ 6.01 грн
GF1G-E3/5CA GF1G-E3/5CA htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 1A DO214BA; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-214BA (GF1); Package / Case : DO-214BA; Diode Type : Standard; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 5µA @ 400V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 400V товар отсутствует, Вы можете сделать запрос добавив товар в корзину
RGL34BHE3/83 RGL34BHE3/83 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 500MA DO213; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Current - Average Rectified (Io) : 500mA; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AA (GL34); Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard; Package / Case : DO-213AA (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 100V товар отсутствует, Вы можете сделать запрос добавив товар в корзину
RGL34JHE3/83 RGL34JHE3/83 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 500MA DO213; Current - Reverse Leakage @ Vr : 5µA @ 600V; Reverse Recovery Time (trr) : 250ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Current - Average Rectified (Io) : 500mA; Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR); Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Mounting Type : Surface Mount; Package / Case : DO-213AA (Glass); Supplier Device Package : DO-213AA (GL34); Operating Temperature - Junction : -65°C ~ 175°C товар отсутствует, Вы можете сделать запрос добавив товар в корзину
SSA33L-E3/5AT SSA33L-E3/5AT htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE SCHOTTKY 30V 3A DO214AC; Current - Reverse Leakage @ Vr : 500µA @ 30V; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 450mV @ 3A; Current - Average Rectified (Io) : 3A; Voltage - DC Reverse (Vr) (Max) : 30V; Diode Type : Schottky; Base Part Number : SSA33L; Operating Temperature - Junction : -65°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Part Status : Active; Packaging : Tape & Reel (TR) товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 5380 шт - цена и срок поставки
GF1K-E3/67A GF1K-E3/67A htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 1A DO214BA; Base Part Number : GF1K; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-214BA (GF1); Package / Case : DO-214BA; Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Voltage - Forward (Vf) (Max) @ If : 1.2V @ 1A; Current - Reverse Leakage @ Vr : 5µA @ 800V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io); Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR) под заказ 3000 шт
срок поставки 5-15 дня (дней)
под заказ 3518 шт - цена и срок поставки
1500+ 7.04 грн
3000+ 6.42 грн
RGL34AHE3/98 RGL34AHE3/98 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 500MA DO213AA; Current - Average Rectified (Io) : 500mA; Voltage - DC Reverse (Vr) (Max) : 50V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR); Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AA (GL34); Package / Case : DO-213AA (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 50V; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA товар отсутствует, Вы можете сделать запрос добавив товар в корзину
RGL34BHE3/98 RGL34BHE3/98 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 500MA DO213; Mounting Type : Surface Mount; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 100V; Operating Temperature - Junction : -65°C ~ 175°C; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Supplier Device Package : DO-213AA (GL34); Package / Case : DO-213AA (Glass); Current - Average Rectified (Io) : 500mA; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard товар отсутствует, Вы можете сделать запрос добавив товар в корзину
RGL34DHE3/98 RGL34DHE3/98 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 500MA DO213; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AA (GL34); Package / Case : DO-213AA (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 200V; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Current - Average Rectified (Io) : 500mA; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard товар отсутствует, Вы можете сделать запрос добавив товар в корзину
RGL34GHE3/98 RGL34GHE3/98 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 500MA DO213; Packaging : Tape & Reel (TR); Part Status : Active; Diode Type : Standard; Voltage - DC Reverse (Vr) (Max) : 400V; Current - Average Rectified (Io) : 500mA; Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Speed : Fast Recovery =< 500ns, > 200mA (Io); Reverse Recovery Time (trr) : 150ns; Current - Reverse Leakage @ Vr : 5µA @ 400V; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Mounting Type : Surface Mount; Package / Case : DO-213AA (Glass); Supplier Device Package : DO-213AA (GL34); Operating Temperature - Junction : -65°C ~ 175°C; Base Part Number : RGL34G товар отсутствует, Вы можете сделать запрос добавив товар в корзину
RGL34JHE3/98 RGL34JHE3/98 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 500MA DO213; Packaging : Tape & Reel (TR); Part Status : Active; Diode Type : Standard; Voltage - DC Reverse (Vr) (Max) : 600V; Current - Average Rectified (Io) : 500mA; Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Speed : Fast Recovery =< 500ns, > 200mA (Io); Reverse Recovery Time (trr) : 250ns; Current - Reverse Leakage @ Vr : 5µA @ 600V; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Mounting Type : Surface Mount; Package / Case : DO-213AA (Glass); Supplier Device Package : DO-213AA (GL34); Operating Temperature - Junction : -65°C ~ 175°C товар отсутствует, Вы можете сделать запрос добавив товар в корзину
RGL34KHE3/98 RGL34KHE3/98 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 500MA DO213; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AA (GL34); Package / Case : DO-213AA (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 800V; Reverse Recovery Time (trr) : 250ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Current - Average Rectified (Io) : 500mA; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR) под заказ 17500 шт
срок поставки 5-15 дня (дней)
под заказ 37498 шт - цена и срок поставки
2500+ 6.42 грн
5000+ 5.8 грн
12500+ 5 грн
ESH1B-E3/5AT ESH1B-E3/5AT htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 1A DO214AC; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 100V; Operating Temperature - Junction : -55°C ~ 175°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 100V; Diode Type : Standard; Reverse Recovery Time (trr) : 25ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 900mV @ 1A товар отсутствует, Вы можете сделать запрос добавив товар в корзину
ESH1C-E3/5AT ESH1C-E3/5AT htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 150V 1A DO214AC; Current - Reverse Leakage @ Vr : 1µA @ 150V; Operating Temperature - Junction : -55°C ~ 175°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Reverse Recovery Time (trr) : 25ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 900mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 150V; Diode Type : Standard товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BYM11-1000HE3/96 BYM11-1000HE3/96 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 1A DO213AB; Packaging : Tape & Reel (TR); Part Status : Discontinued at Digi-Key; Diode Type : Standard; Voltage - DC Reverse (Vr) (Max) : 1000V; Current - Average Rectified (Io) : 1A; Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Speed : Fast Recovery =< 500ns, > 200mA (Io); Reverse Recovery Time (trr) : 500ns; Current - Reverse Leakage @ Vr : 5µA @ 1000V; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Mounting Type : Surface Mount; Package / Case : DO-213AB, MELF (Glass); Supplier Device Package : DO-213AB; Operating Temperature - Junction : -65°C ~ 175°C товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BYM11-100HE3/96 BYM11-100HE3/96 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 1A DO213AB; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 100V; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 100V товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BYM11-200HE3/96 BYM11-200HE3/96 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1A DO213AB; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 200V товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BYM11-400HE3/96 BYM11-400HE3/96 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 1A DO213AB; Supplier Device Package : DO-213AB; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 400V; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BYM11-50HE3/96 BYM11-50HE3/96 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 1A DO213AB; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 50V; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 50V; Diode Type : Standard товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BYM11-600HE3/96 BYM11-600HE3/96 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A DO213AB; Packaging : Tape & Reel (TR); Part Status : Active; Diode Type : Standard; Voltage - DC Reverse (Vr) (Max) : 600V; Current - Average Rectified (Io) : 1A; Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Speed : Fast Recovery =< 500ns, > 200mA (Io); Reverse Recovery Time (trr) : 250ns; Current - Reverse Leakage @ Vr : 5µA @ 600V; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Mounting Type : Surface Mount; Package / Case : DO-213AB, MELF (Glass); Supplier Device Package : DO-213AB; Operating Temperature - Junction : -65°C ~ 175°C товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BYM11-800HE3/96 BYM11-800HE3/96 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 1A DO213AB; Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 800V; Reverse Recovery Time (trr) : 500ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB; Package / Case : DO-213AB, MELF (Glass) товар отсутствует, Вы можете сделать запрос добавив товар в корзину
RGL41AHE3/96 RGL41AHE3/96 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 1A DO213AB; Packaging : Tape & Reel (TR); Part Status : Active; Diode Type : Standard; Voltage - DC Reverse (Vr) (Max) : 50V; Current - Average Rectified (Io) : 1A; Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Speed : Fast Recovery =< 500ns, > 200mA (Io); Reverse Recovery Time (trr) : 150ns; Current - Reverse Leakage @ Vr : 5µA @ 50V; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Mounting Type : Surface Mount; Package / Case : DO-213AB, MELF (Glass); Supplier Device Package : DO-213AB; Operating Temperature - Junction : -65°C ~ 175°C товар отсутствует, Вы можете сделать запрос добавив товар в корзину
RGL41BHE3/96 RGL41BHE3/96 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 1A DO213AB; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 100V; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A товар отсутствует, Вы можете сделать запрос добавив товар в корзину
RGL41DHE3/96 RGL41DHE3/96 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1A DO213AB; Current - Reverse Leakage @ Vr : 5µA @ 200V; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz товар отсутствует, Вы можете сделать запрос добавив товар в корзину
RGL41GHE3/96 RGL41GHE3/96 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 1A DO213AB; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 400V; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard товар отсутствует, Вы можете сделать запрос добавив товар в корзину
RGL41JHE3/96 RGL41JHE3/96 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A DO213AB; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 600V; Reverse Recovery Time (trr) : 250ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Standard товар отсутствует, Вы можете сделать запрос добавив товар в корзину
RGL41KHE3/96 RGL41KHE3/96 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 1A DO213AB; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 800V; Reverse Recovery Time (trr) : 500ns товар отсутствует, Вы можете сделать запрос добавив товар в корзину
RGL41MHE3/96 RGL41MHE3/96 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 1A DO213AB; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 1000V; Reverse Recovery Time (trr) : 500ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 1000V (1kV); Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB товар отсутствует, Вы можете сделать запрос добавив товар в корзину
EGP10G-E3/54 EGP10G-E3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 1A DO204AL; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR); Operating Temperature - Junction : -65°C ~ 150°C; Supplier Device Package : DO-204AL (DO-41); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 400V; Reverse Recovery Time (trr) : 50ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.25V @ 1A товар отсутствует, Вы можете сделать запрос добавив товар в корзину
1N4384GPHE3/73 1N4384GPHE3/73 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 1A DO204AC; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 400V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard товар отсутствует, Вы можете сделать запрос добавив товар в корзину
1N5062GPHE3/73 1N5062GPHE3/73 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 1A DO204AC; Base Part Number : 1N5062; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 800V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.2V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Standard; Part Status : Obsolete; Packaging : Tape & Box (TB) товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BY127MGPHE3/73 BY127MGPHE3/73 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GP 1.25KV 1.75A DO204; Base Part Number : BY127; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 1250V; Reverse Recovery Time (trr) : 2µs; Current - Average Rectified (Io) : 1.75A; Voltage - DC Reverse (Vr) (Max) : 1250V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Box (TB); Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.5V @ 5A товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BY133GPHE3/73 BY133GPHE3/73 Vishay Semiconductor Diodes Division DIODE GEN PURP 1.3KV 1A DO204AC; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.2V @ 2A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 1300V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Box (TB); Base Part Number : BY133; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 1300V; Reverse Recovery Time (trr) : 2µs товар отсутствует, Вы можете сделать запрос добавив товар в корзину
GP15GHE3/73 GP15GHE3/73 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 1.5A DO204AC; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 400V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A товар отсутствует, Вы можете сделать запрос добавив товар в корзину
GP15JHE3/73 GP15JHE3/73 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1.5A DO204AC; Current - Reverse Leakage @ Vr : 5µA @ 600V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole товар отсутствует, Вы можете сделать запрос добавив товар в корзину
GP15KHE3/73 GP15KHE3/73 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 1.5A DO204AC; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 800V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Standard товар отсутствует, Вы можете сделать запрос добавив товар в корзину
GP15MHE3/73 GP15MHE3/73 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 1.5A DO204; Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 1000V; Diode Type : Standard; Part Status : Obsolete; Packaging : Tape & Box (TB); Base Part Number : GP15M; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 1000V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io) товар отсутствует, Вы можете сделать запрос добавив товар в корзину
1N4383GPHE3/54 1N4383GPHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1A DO204AC; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io); Operating Temperature - Junction : -65°C ~ 175°C; Voltage - Forward (Vf) (Max) @ If : 1V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 200V; Supplier Device Package : DO-204AC (DO-15); Diode Type : Standard; Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 200V товар отсутствует, Вы можете сделать запрос добавив товар в корзину
1N4384GPHE3/54 1N4384GPHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 1A DO204AC; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 400V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C товар отсутствует, Вы можете сделать запрос добавив товар в корзину
1N4385GPHE3/54 1N4385GPHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1A DO204AC; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 600V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Standard товар отсутствует, Вы можете сделать запрос добавив товар в корзину
1N5059GPHE3/54 1N5059GPHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1A DO204AC; Voltage - Forward (Vf) (Max) @ If : 1.2V @ 1A; Operating Temperature - Junction : -65°C ~ 175°C; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 200V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io) товар отсутствует, Вы можете сделать запрос добавив товар в корзину
1N5062GPHE3/54 1N5062GPHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 1A DO204AC; Part Status : Obsolete; Packaging : Tape & Reel (TR); Diode Type : Standard; Voltage - DC Reverse (Vr) (Max) : 800V; Current - Average Rectified (Io) : 1A; Voltage - Forward (Vf) (Max) @ If : 1.2V @ 1A; Speed : Standard Recovery >500ns, > 200mA (Io); Reverse Recovery Time (trr) : 2µs; Current - Reverse Leakage @ Vr : 5µA @ 800V; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Mounting Type : Through Hole; Package / Case : DO-204AC, DO-15, Axial; Supplier Device Package : DO-204AC (DO-15); Operating Temperature - Junction : -65°C ~ 175°C; Base Part Number : 1N5062 товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BY127MGPHE3/54 BY127MGPHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GP 1.25KV 1.75A DO204; Base Part Number : BY127; Voltage - DC Reverse (Vr) (Max) : 1250V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR); Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 1250V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.5V @ 5A; Current - Average Rectified (Io) : 1.75A товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BY133GPHE3/54 BY133GPHE3/54 Vishay Semiconductor Diodes Division DIODE GEN PURP 1.3KV 1A DO204AC; Base Part Number : BY133; Voltage - Forward (Vf) (Max) @ If : 1.2V @ 2A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 1300V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR); Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 1300V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io) товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BY227MGPHE3/54 BY227MGPHE3/54 Vishay Semiconductor Diodes Division DIODE GEN PURP 1.25KV 2A DO204AC; Current - Average Rectified (Io) : 2A; Voltage - DC Reverse (Vr) (Max) : 1250V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR); Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 1250V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.5V @ 5A товар отсутствует, Вы можете сделать запрос добавив товар в корзину
GP15GHE3/54 GP15GHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 1.5A DO204AC; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 400V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard товар отсутствует, Вы можете сделать запрос добавив товар в корзину
GP15JHE3/54 GP15JHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 600V 1.5A DO204AC; Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 600V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A товар отсутствует, Вы можете сделать запрос добавив товар в корзину
GP15KHE3/54 GP15KHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 800V 1.5A DO204AC; Current - Reverse Leakage @ Vr : 5µA @ 800V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole товар отсутствует, Вы можете сделать запрос добавив товар в корзину
GP15MHE3/54 GP15MHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 1KV 1.5A DO204; Voltage - DC Reverse (Vr) (Max) : 1000V; Diode Type : Standard; Part Status : Obsolete; Base Part Number : GP15M; Operating Temperature - Junction : -65°C ~ 175°C; Packaging : Tape & Reel (TR); Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 1000V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A товар отсутствует, Вы можете сделать запрос добавив товар в корзину
1N4004GPEHE3/73 1N4004GPEHE3/73 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 400V 1A DO204AL; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard; Part Status : Obsolete; Packaging : Tape & Box (TB); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1A; Speed : Standard Recovery >500ns, > 200mA (Io); Reverse Recovery Time (trr) : 2µs; Current - Reverse Leakage @ Vr : 5µA @ 400V; Capacitance @ Vr, F : 8pF @ 4V, 1MHz; Mounting Type : Through Hole; Package / Case : DO-204AL, DO-41, Axial; Supplier Device Package : DO-204AL (DO-41); Operating Temperature - Junction : -65°C ~ 175°C; Base Part Number : 1N4004 товар отсутствует, Вы можете сделать запрос добавив товар в корзину
GP15BHE3/73 GP15BHE3/73 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 1.5A DO204AC; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 100V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard товар отсутствует, Вы можете сделать запрос добавив товар в корзину
GP15DHE3/73 GP15DHE3/73 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1.5A DO204AC; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 200V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BYG10DHE3/TR3 BYG10DHE3/TR3 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE AVALANCHE 200V 1.5A; Current - Reverse Leakage @ Vr : 1µA @ 200V; Reverse Recovery Time (trr) : 4µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Avalanche; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BYG10GHE3/TR3 BYG10GHE3/TR3 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE AVALANCHE 400V 1.5A; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 400V; Reverse Recovery Time (trr) : 4µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Avalanche товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BYG10JHE3/TR3 BYG10JHE3/TR3 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE AVALANCHE 600V 1.5A; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 600V; Reverse Recovery Time (trr) : 4µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Avalanche товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BYG10KHE3/TR3 BYG10KHE3/TR3 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE AVALANCHE 800V 1.5A; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Avalanche; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 800V; Reverse Recovery Time (trr) : 4µs товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BYG10MHE3/TR3 BYG10MHE3/TR3 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE AVALANCHE 1KV 1.5A; Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 1000V; Reverse Recovery Time (trr) : 4µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Operating Temperature - Junction : -55°C ~ 150°C; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 1000V (1kV); Diode Type : Avalanche; Supplier Device Package : DO-214AC (SMA) товар отсутствует, Вы можете сделать запрос добавив товар в корзину
GP15AHE3/54 GP15AHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 50V 1.5A DO204AC; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 50V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 50V; Diode Type : Standard товар отсутствует, Вы можете сделать запрос добавив товар в корзину
GP15BHE3/54 GP15BHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 1.5A DO204AC; Current - Average Rectified (Io) : 1.5A; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard; Current - Reverse Leakage @ Vr : 5µA @ 100V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A товар отсутствует, Вы можете сделать запрос добавив товар в корзину
GP15DHE3/54 GP15DHE3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 200V 1.5A DO204AC; Current - Reverse Leakage @ Vr : 5µA @ 200V; Reverse Recovery Time (trr) : 3.5µs; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard; Mounting Type : Through Hole товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BYG10DHE3/TR BYG10DHE3/TR htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE AVALANCHE 200V 1.5A; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 200V; Reverse Recovery Time (trr) : 4µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Avalanche товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BYG10GHE3/TR BYG10GHE3/TR htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE AVALANCHE 400V 1.5A; Diode Type : Avalanche; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 400V; Reverse Recovery Time (trr) : 4µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 400V товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BYG10JHE3/TR BYG10JHE3/TR htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE AVALANCHE 600V 1.5A; Reverse Recovery Time (trr) : 4µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Avalanche; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 600V товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BYG10KHE3/TR BYG10KHE3/TR htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE AVALANCHE 800V 1.5A; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 800V; Reverse Recovery Time (trr) : 4µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Avalanche; Operating Temperature - Junction : -55°C ~ 150°C товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BYG10MHE3/TR BYG10MHE3/TR htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE AVALANCHE 1KV 1.5A; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 1000V; Reverse Recovery Time (trr) : 4µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 1000V (1kV); Diode Type : Avalanche товар отсутствует, Вы можете сделать запрос добавив товар в корзину
SS19-E3/61T SS19-E3/61T Vishay Semiconductor Diodes Division DIODE SCHOTTKY 90V 1A DO214AC; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 90V; Diode Type : Schottky; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Speed : Fast Recovery =< 500ns, > 200mA (Io) товар отсутствует, Вы можете сделать запрос добавив товар в корзину
SS2PH9HM3/84A SS2PH9HM3/84A htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE SCHOTTKY 90V 2A DO220AA; Diode Type : Schottky; Operating Temperature - Junction : -55°C ~ 175°C; Supplier Device Package : DO-220AA (SMP); Package / Case : DO-220AA; Mounting Type : Surface Mount; Capacitance @ Vr, F : 65pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 1µA @ 90V; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 800mV @ 2A; Current - Average Rectified (Io) : 2A; Voltage - DC Reverse (Vr) (Max) : 90V товар отсутствует, Вы можете сделать запрос добавив товар в корзину
FGP10B-E3/54 FGP10B-E3/54 htmlspecialchars($datasheet_name) Vishay Semiconductor Diodes Division DIODE GEN PURP 100V 1A DO204AL; Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 25pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 2µA @ 100V; Reverse Recovery Time (trr) : 35ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 950mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AL (DO-41) товар отсутствует, Вы можете сделать запрос добавив товар в корзину
RGL34D-E3/98 htmlspecialchars($datasheet_name)
RGL34D-E3/98
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 500MA DO213; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Current - Average Rectified (Io) : 500mA; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AA (GL34); Package / Case : DO-213AA (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 200V; Reverse Recovery Time (trr) : 150ns
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 257500 шт - цена и срок поставки
RGL34K-E3/98 htmlspecialchars($datasheet_name)
RGL34K-E3/98
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 500MA DO213; Mounting Type : Surface Mount; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 800V; Reverse Recovery Time (trr) : 250ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Current - Average Rectified (Io) : 500mA; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR); Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AA (GL34); Package / Case : DO-213AA (Glass)
под заказ 5000 шт
срок поставки 5-15 дня (дней)
под заказ 15190 шт - цена и срок поставки
2500+ 6.2 грн
5000+ 5.7 грн
BYS12-90HE3/TR htmlspecialchars($datasheet_name)
BYS12-90HE3/TR
Производитель: Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 90V 1.5A DO214AC; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 100µA @ 90V; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 750mV @ 1A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 90V; Diode Type : Schottky
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
SBYV26CHE3/73 htmlspecialchars($datasheet_name)
SBYV26CHE3/73
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 1A DO204AL; Voltage - Forward (Vf) (Max) @ If : 2.5V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Standard; Part Status : Obsolete; Packaging : Tape & Box (TB); Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AL (DO-41); Mounting Type : Through Hole; Package / Case : DO-204AL, DO-41, Axial; Current - Reverse Leakage @ Vr : 5µA @ 600V; Reverse Recovery Time (trr) : 30ns; Speed : Fast Recovery =< 500ns, > 200mA (Io)
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
SBYV26CHE3/54 htmlspecialchars($datasheet_name)
SBYV26CHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 1A DO204AL; Voltage - Forward (Vf) (Max) @ If : 2.5V @ 1A; Current - Average Rectified (Io) : 1A; Packaging : Tape & Reel (TR); Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AL (DO-41); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 600V; Reverse Recovery Time (trr) : 30ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Standard; Part Status : Obsolete
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
SSA34HE3/5AT htmlspecialchars($datasheet_name)
SSA34HE3/5AT
Производитель: Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 40V 3A DO214AC; Base Part Number : SSA34; Operating Temperature - Junction : -65°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Current - Reverse Leakage @ Vr : 200µA @ 40V; Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 490mV @ 3A; Current - Average Rectified (Io) : 3A; Voltage - DC Reverse (Vr) (Max) : 40V; Diode Type : Schottky; Part Status : Obsolete; Packaging : Tape & Reel (TR)
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
RGL34K-E3/83 htmlspecialchars($datasheet_name)
RGL34K-E3/83
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 500MA DO213; Mounting Type : Surface Mount; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 800V; Reverse Recovery Time (trr) : 250ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - DC Reverse (Vr) (Max) : 800V; Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Current - Average Rectified (Io) : 500mA; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR); Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AA (GL34); Package / Case : DO-213AA (Glass)
под заказ 8500 шт
срок поставки 5-15 дня (дней)
под заказ 17000 шт - цена и срок поставки
SS22-E3/5BT htmlspecialchars($datasheet_name)
SS22-E3/5BT
Производитель: Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 20V 2A DO214AA; Operating Temperature - Junction : -65°C ~ 125°C; Supplier Device Package : DO-214AA (SMB); Package / Case : DO-214AA, SMB; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 400µA @ 20V; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 500mV @ 2A; Current - Average Rectified (Io) : 2A; Voltage - DC Reverse (Vr) (Max) : 20V; Diode Type : Schottky
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
SS23-E3/5BT htmlspecialchars($datasheet_name)
SS23-E3/5BT
Производитель: Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 30V 2A DO214AA; Speed : Fast Recovery =< 500ns, > 200mA (Io); Operating Temperature - Junction : -65°C ~ 125°C; Supplier Device Package : DO-214AA (SMB); Package / Case : DO-214AA, SMB; Mounting Type : Surface Mount; Voltage - Forward (Vf) (Max) @ If : 500mV @ 2A; Current - Average Rectified (Io) : 2A; Voltage - DC Reverse (Vr) (Max) : 30V; Current - Reverse Leakage @ Vr : 400µA @ 30V; Diode Type : Schottky
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
SS24-E3/5BT htmlspecialchars($datasheet_name)
SS24-E3/5BT
Производитель: Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 40V 2A DO214AA; Operating Temperature - Junction : -65°C ~ 125°C; Supplier Device Package : DO-214AA (SMB); Package / Case : DO-214AA, SMB; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 400µA @ 40V; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 500mV @ 2A; Current - Average Rectified (Io) : 2A; Voltage - DC Reverse (Vr) (Max) : 40V; Diode Type : Schottky; Part Status : Active; Packaging : Tape & Reel (TR)
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 4048 шт - цена и срок поставки
ESH2PBHM3/85A htmlspecialchars($datasheet_name)
ESH2PBHM3/85A
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 2A DO220AA; Operating Temperature - Junction : -55°C ~ 175°C; Supplier Device Package : DO-220AA (SMP); Package / Case : DO-220AA; Mounting Type : Surface Mount; Capacitance @ Vr, F : 25pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 1µA @ 100V; Reverse Recovery Time (trr) : 25ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 980mV @ 2A; Current - Average Rectified (Io) : 2A; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
ESH2PCHM3/85A htmlspecialchars($datasheet_name)
ESH2PCHM3/85A
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 2A DO220AA; Current - Average Rectified (Io) : 2A; Voltage - DC Reverse (Vr) (Max) : 150V; Diode Type : Standard; Operating Temperature - Junction : -55°C ~ 175°C; Supplier Device Package : DO-220AA (SMP); Package / Case : DO-220AA; Mounting Type : Surface Mount; Capacitance @ Vr, F : 25pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 1µA @ 150V; Reverse Recovery Time (trr) : 25ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 980mV @ 2A
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
VS-11DQ10 htmlspecialchars($datasheet_name)
VS-11DQ10
Производитель: Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 100V 1.1A DO204AL; Operating Temperature - Junction : -40°C ~ 150°C; Supplier Device Package : DO-204AL (DO-41); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 500µA @ 100V; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 850mV @ 1A; Current - Average Rectified (Io) : 1.1A; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Schottky; Part Status : Obsolete; Packaging : Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
BYS11-90HE3/TR htmlspecialchars($datasheet_name)
BYS11-90HE3/TR
Производитель: Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 90V 1.5A DO214AC; Packaging : Tape & Reel (TR); Part Status : Obsolete; Diode Type : Schottky; Voltage - DC Reverse (Vr) (Max) : 90V; Current - Average Rectified (Io) : 1.5A; Voltage - Forward (Vf) (Max) @ If : 750mV @ 1A; Speed : Fast Recovery =< 500ns, > 200mA (Io); Current - Reverse Leakage @ Vr : 100µA @ 90V; Mounting Type : Surface Mount; Package / Case : DO-214AC, SMA; Supplier Device Package : DO-214AC (SMA); Operating Temperature - Junction : -55°C ~ 150°C
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
US1J/1 htmlspecialchars($datasheet_name)
US1J/1
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 1A DO214AC; Packaging : Bulk; Part Status : Obsolete; Diode Type : Standard; Voltage - DC Reverse (Vr) (Max) : 600V; Current - Average Rectified (Io) : 1A; Voltage - Forward (Vf) (Max) @ If : 1.7V @ 1A; Speed : Fast Recovery =< 500ns, > 200mA (Io); Reverse Recovery Time (trr) : 75ns; Current - Reverse Leakage @ Vr : 10µA @ 600V; Mounting Type : Surface Mount; Package / Case : DO-214AC, SMA; Supplier Device Package : DO-214AC (SMA); Operating Temperature - Junction : -65°C ~ 175°C
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
US1JHE3/61T htmlspecialchars($datasheet_name)
US1JHE3/61T
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 1A DO214AC; Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Standard; Part Status : Obsolete; Packaging : Tape & Reel (TR); Current - Average Rectified (Io) : 1A; Voltage - Forward (Vf) (Max) @ If : 1.7V @ 1A; Speed : Fast Recovery =< 500ns, > 200mA (Io); Reverse Recovery Time (trr) : 75ns; Current - Reverse Leakage @ Vr : 10µA @ 600V; Capacitance @ Vr, F : 10pF @ 4V, 1MHz; Mounting Type : Surface Mount; Package / Case : DO-214AC, SMA; Supplier Device Package : DO-214AC (SMA); Operating Temperature - Junction : -55°C ~ 150°C
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
US1DHE3/61T htmlspecialchars($datasheet_name)
US1DHE3/61T
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO214AC; Packaging : Tape & Reel (TR); Part Status : Obsolete; Diode Type : Standard; Voltage - DC Reverse (Vr) (Max) : 200V; Current - Average Rectified (Io) : 1A; Voltage - Forward (Vf) (Max) @ If : 1V @ 1A; Speed : Fast Recovery =< 500ns, > 200mA (Io); Reverse Recovery Time (trr) : 50ns; Current - Reverse Leakage @ Vr : 10µA @ 200V; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Mounting Type : Surface Mount; Package / Case : DO-214AC, SMA; Supplier Device Package : DO-214AC (SMA); Operating Temperature - Junction : -55°C ~ 150°C; Base Part Number : US1D
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
US1GHE3/61T htmlspecialchars($datasheet_name)
US1GHE3/61T
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1A DO214AC; Current - Reverse Leakage @ Vr : 10µA @ 400V; Speed : Fast Recovery =< 500ns, > 200mA (Io); Reverse Recovery Time (trr) : 50ns; Voltage - Forward (Vf) (Max) @ If : 1V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard; Part Status : Obsolete; Packaging : Tape & Reel (TR); Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Mounting Type : Surface Mount; Package / Case : DO-214AC, SMA; Supplier Device Package : DO-214AC (SMA); Operating Temperature - Junction : -55°C ~ 150°C; Base Part Number : US1G
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
SSA24HE3/61T htmlspecialchars($datasheet_name)
SSA24HE3/61T
Производитель: Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 40V 2A DO214AC; Packaging : Tape & Reel (TR); Part Status : Obsolete; Voltage - Forward (Vf) (Max) @ If : 490mV @ 2A; Current - Reverse Leakage @ Vr : 200µA @ 40V; Diode Type : Schottky; Voltage - DC Reverse (Vr) (Max) : 40V; Current - Average Rectified (Io) : 2A; Speed : Fast Recovery =< 500ns, > 200mA (Io); Mounting Type : Surface Mount; Package / Case : DO-214AC, SMA; Supplier Device Package : DO-214AC (SMA); Operating Temperature - Junction : -65°C ~ 150°C; Base Part Number : SSA24
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
ES1PB-M3/85A htmlspecialchars($datasheet_name)
ES1PB-M3/85A
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1A DO220AA; Mounting Type : Surface Mount; Capacitance @ Vr, F : 10pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 100V; Reverse Recovery Time (trr) : 25ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 920mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-220AA (SMP); Package / Case : DO-220AA
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
ES1PC-M3/85A htmlspecialchars($datasheet_name)
ES1PC-M3/85A
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 1A DO220AA; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-220AA (SMP); Package / Case : DO-220AA; Mounting Type : Surface Mount; Capacitance @ Vr, F : 10pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 150V; Reverse Recovery Time (trr) : 25ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 920mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 150V; Diode Type : Standard
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ES1PD-M3/85A htmlspecialchars($datasheet_name)
ES1PD-M3/85A
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO220AA; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 920mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR); Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-220AA (SMP); Package / Case : DO-220AA; Mounting Type : Surface Mount; Capacitance @ Vr, F : 10pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 200V; Reverse Recovery Time (trr) : 25ns
под заказ 30000 шт
срок поставки 5-15 дня (дней)
под заказ 30000 шт - цена и срок поставки
10000+ 7.25 грн
EGP10BEHE3/54 htmlspecialchars($datasheet_name)
EGP10BEHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1A DO204AL; Operating Temperature - Junction : -65°C ~ 150°C; Supplier Device Package : DO-204AL (DO-41); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 22pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 100V; Reverse Recovery Time (trr) : 50ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 950mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard
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EGP10CEHE3/54 htmlspecialchars($datasheet_name)
EGP10CEHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 1A DO204AL; Operating Temperature - Junction : -65°C ~ 150°C; Supplier Device Package : DO-204AL (DO-41); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 22pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 150V; Reverse Recovery Time (trr) : 50ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 950mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 150V; Diode Type : Standard
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EGP10DEHE3/54 htmlspecialchars($datasheet_name)
EGP10DEHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO204AL; Operating Temperature - Junction : -65°C ~ 150°C; Supplier Device Package : DO-204AL (DO-41); Current - Reverse Leakage @ Vr : 5µA @ 200V; Reverse Recovery Time (trr) : 50ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 950mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard; Part Status : Obsolete; Packaging : Tape & Reel (TR); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 22pF @ 4V, 1MHz
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EGP10GE-E3/54 htmlspecialchars($datasheet_name)
EGP10GE-E3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1A DO204AL; Operating Temperature - Junction : -65°C ~ 150°C; Supplier Device Package : DO-204AL (DO-41); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 400V; Reverse Recovery Time (trr) : 50ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.25V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard; Packaging : Tape & Reel (TR); Part Status : Active
под заказ 5500 шт
срок поставки 5-15 дня (дней)
под заказ 11000 шт - цена и срок поставки
5500+ 5.8 грн
FGP10BHE3/54 htmlspecialchars($datasheet_name)
FGP10BHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1A DO204AL; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AL (DO-41); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 25pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 2µA @ 100V; Reverse Recovery Time (trr) : 35ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 950mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard
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FGP10CHE3/54 htmlspecialchars($datasheet_name)
FGP10CHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 1A DO204AL; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 150V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AL (DO-41); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 25pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 2µA @ 150V; Reverse Recovery Time (trr) : 35ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 950mV @ 1A
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FGP10DHE3/54 htmlspecialchars($datasheet_name)
FGP10DHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO204AL; Capacitance @ Vr, F : 25pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 2µA @ 200V; Reverse Recovery Time (trr) : 35ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 950mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AL (DO-41); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole
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GF1B-E3/5CA htmlspecialchars($datasheet_name)
GF1B-E3/5CA
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1A DO214BA; Current - Reverse Leakage @ Vr : 5µA @ 100V; Reverse Recovery Time (trr) : 2µs; Base Part Number : GF1B; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-214BA (GF1); Package / Case : DO-214BA; Mounting Type : Surface Mount; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR)
под заказ 6500 шт
срок поставки 5-15 дня (дней)
6500+ 6.01 грн
GF1G-E3/5CA htmlspecialchars($datasheet_name)
GF1G-E3/5CA
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1A DO214BA; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-214BA (GF1); Package / Case : DO-214BA; Diode Type : Standard; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 5µA @ 400V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 400V
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RGL34BHE3/83 htmlspecialchars($datasheet_name)
RGL34BHE3/83
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 500MA DO213; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Current - Average Rectified (Io) : 500mA; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AA (GL34); Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard; Package / Case : DO-213AA (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 100V
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RGL34JHE3/83 htmlspecialchars($datasheet_name)
RGL34JHE3/83
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 500MA DO213; Current - Reverse Leakage @ Vr : 5µA @ 600V; Reverse Recovery Time (trr) : 250ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Current - Average Rectified (Io) : 500mA; Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR); Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Mounting Type : Surface Mount; Package / Case : DO-213AA (Glass); Supplier Device Package : DO-213AA (GL34); Operating Temperature - Junction : -65°C ~ 175°C
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SSA33L-E3/5AT htmlspecialchars($datasheet_name)
SSA33L-E3/5AT
Производитель: Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 30V 3A DO214AC; Current - Reverse Leakage @ Vr : 500µA @ 30V; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 450mV @ 3A; Current - Average Rectified (Io) : 3A; Voltage - DC Reverse (Vr) (Max) : 30V; Diode Type : Schottky; Base Part Number : SSA33L; Operating Temperature - Junction : -65°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Part Status : Active; Packaging : Tape & Reel (TR)
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под заказ 5380 шт - цена и срок поставки
GF1K-E3/67A htmlspecialchars($datasheet_name)
GF1K-E3/67A
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 1A DO214BA; Base Part Number : GF1K; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-214BA (GF1); Package / Case : DO-214BA; Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Voltage - Forward (Vf) (Max) @ If : 1.2V @ 1A; Current - Reverse Leakage @ Vr : 5µA @ 800V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io); Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR)
под заказ 3000 шт
срок поставки 5-15 дня (дней)
под заказ 3518 шт - цена и срок поставки
1500+ 7.04 грн
3000+ 6.42 грн
RGL34AHE3/98 htmlspecialchars($datasheet_name)
RGL34AHE3/98
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 500MA DO213AA; Current - Average Rectified (Io) : 500mA; Voltage - DC Reverse (Vr) (Max) : 50V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR); Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AA (GL34); Package / Case : DO-213AA (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 50V; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA
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RGL34BHE3/98 htmlspecialchars($datasheet_name)
RGL34BHE3/98
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 500MA DO213; Mounting Type : Surface Mount; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 100V; Operating Temperature - Junction : -65°C ~ 175°C; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Supplier Device Package : DO-213AA (GL34); Package / Case : DO-213AA (Glass); Current - Average Rectified (Io) : 500mA; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard
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RGL34DHE3/98 htmlspecialchars($datasheet_name)
RGL34DHE3/98
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 500MA DO213; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AA (GL34); Package / Case : DO-213AA (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 200V; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Current - Average Rectified (Io) : 500mA; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard
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RGL34GHE3/98 htmlspecialchars($datasheet_name)
RGL34GHE3/98
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 500MA DO213; Packaging : Tape & Reel (TR); Part Status : Active; Diode Type : Standard; Voltage - DC Reverse (Vr) (Max) : 400V; Current - Average Rectified (Io) : 500mA; Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Speed : Fast Recovery =< 500ns, > 200mA (Io); Reverse Recovery Time (trr) : 150ns; Current - Reverse Leakage @ Vr : 5µA @ 400V; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Mounting Type : Surface Mount; Package / Case : DO-213AA (Glass); Supplier Device Package : DO-213AA (GL34); Operating Temperature - Junction : -65°C ~ 175°C; Base Part Number : RGL34G
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RGL34JHE3/98 htmlspecialchars($datasheet_name)
RGL34JHE3/98
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 500MA DO213; Packaging : Tape & Reel (TR); Part Status : Active; Diode Type : Standard; Voltage - DC Reverse (Vr) (Max) : 600V; Current - Average Rectified (Io) : 500mA; Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Speed : Fast Recovery =< 500ns, > 200mA (Io); Reverse Recovery Time (trr) : 250ns; Current - Reverse Leakage @ Vr : 5µA @ 600V; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Mounting Type : Surface Mount; Package / Case : DO-213AA (Glass); Supplier Device Package : DO-213AA (GL34); Operating Temperature - Junction : -65°C ~ 175°C
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RGL34KHE3/98 htmlspecialchars($datasheet_name)
RGL34KHE3/98
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 500MA DO213; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AA (GL34); Package / Case : DO-213AA (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 4pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 800V; Reverse Recovery Time (trr) : 250ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 500mA; Current - Average Rectified (Io) : 500mA; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR)
под заказ 17500 шт
срок поставки 5-15 дня (дней)
под заказ 37498 шт - цена и срок поставки
2500+ 6.42 грн
5000+ 5.8 грн
12500+ 5 грн
ESH1B-E3/5AT htmlspecialchars($datasheet_name)
ESH1B-E3/5AT
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1A DO214AC; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 100V; Operating Temperature - Junction : -55°C ~ 175°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 100V; Diode Type : Standard; Reverse Recovery Time (trr) : 25ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 900mV @ 1A
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ESH1C-E3/5AT htmlspecialchars($datasheet_name)
ESH1C-E3/5AT
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 150V 1A DO214AC; Current - Reverse Leakage @ Vr : 1µA @ 150V; Operating Temperature - Junction : -55°C ~ 175°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Reverse Recovery Time (trr) : 25ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 900mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 150V; Diode Type : Standard
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BYM11-1000HE3/96 htmlspecialchars($datasheet_name)
BYM11-1000HE3/96
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 1A DO213AB; Packaging : Tape & Reel (TR); Part Status : Discontinued at Digi-Key; Diode Type : Standard; Voltage - DC Reverse (Vr) (Max) : 1000V; Current - Average Rectified (Io) : 1A; Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Speed : Fast Recovery =< 500ns, > 200mA (Io); Reverse Recovery Time (trr) : 500ns; Current - Reverse Leakage @ Vr : 5µA @ 1000V; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Mounting Type : Surface Mount; Package / Case : DO-213AB, MELF (Glass); Supplier Device Package : DO-213AB; Operating Temperature - Junction : -65°C ~ 175°C
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BYM11-100HE3/96 htmlspecialchars($datasheet_name)
BYM11-100HE3/96
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1A DO213AB; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 100V; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 100V
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BYM11-200HE3/96 htmlspecialchars($datasheet_name)
BYM11-200HE3/96
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO213AB; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 200V
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BYM11-400HE3/96 htmlspecialchars($datasheet_name)
BYM11-400HE3/96
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1A DO213AB; Supplier Device Package : DO-213AB; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 400V; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C
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BYM11-50HE3/96 htmlspecialchars($datasheet_name)
BYM11-50HE3/96
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 1A DO213AB; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 50V; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 50V; Diode Type : Standard
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BYM11-600HE3/96 htmlspecialchars($datasheet_name)
BYM11-600HE3/96
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 1A DO213AB; Packaging : Tape & Reel (TR); Part Status : Active; Diode Type : Standard; Voltage - DC Reverse (Vr) (Max) : 600V; Current - Average Rectified (Io) : 1A; Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Speed : Fast Recovery =< 500ns, > 200mA (Io); Reverse Recovery Time (trr) : 250ns; Current - Reverse Leakage @ Vr : 5µA @ 600V; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Mounting Type : Surface Mount; Package / Case : DO-213AB, MELF (Glass); Supplier Device Package : DO-213AB; Operating Temperature - Junction : -65°C ~ 175°C
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BYM11-800HE3/96 htmlspecialchars($datasheet_name)
BYM11-800HE3/96
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 1A DO213AB; Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 800V; Reverse Recovery Time (trr) : 500ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB; Package / Case : DO-213AB, MELF (Glass)
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RGL41AHE3/96 htmlspecialchars($datasheet_name)
RGL41AHE3/96
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 1A DO213AB; Packaging : Tape & Reel (TR); Part Status : Active; Diode Type : Standard; Voltage - DC Reverse (Vr) (Max) : 50V; Current - Average Rectified (Io) : 1A; Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Speed : Fast Recovery =< 500ns, > 200mA (Io); Reverse Recovery Time (trr) : 150ns; Current - Reverse Leakage @ Vr : 5µA @ 50V; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Mounting Type : Surface Mount; Package / Case : DO-213AB, MELF (Glass); Supplier Device Package : DO-213AB; Operating Temperature - Junction : -65°C ~ 175°C
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RGL41BHE3/96 htmlspecialchars($datasheet_name)
RGL41BHE3/96
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1A DO213AB; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 100V; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A
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RGL41DHE3/96 htmlspecialchars($datasheet_name)
RGL41DHE3/96
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO213AB; Current - Reverse Leakage @ Vr : 5µA @ 200V; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz
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RGL41GHE3/96 htmlspecialchars($datasheet_name)
RGL41GHE3/96
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1A DO213AB; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 400V; Reverse Recovery Time (trr) : 150ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard
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RGL41JHE3/96 htmlspecialchars($datasheet_name)
RGL41JHE3/96
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 1A DO213AB; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 600V; Reverse Recovery Time (trr) : 250ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Standard
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RGL41KHE3/96 htmlspecialchars($datasheet_name)
RGL41KHE3/96
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 1A DO213AB; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 800V; Reverse Recovery Time (trr) : 500ns
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RGL41MHE3/96 htmlspecialchars($datasheet_name)
RGL41MHE3/96
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 1A DO213AB; Package / Case : DO-213AB, MELF (Glass); Mounting Type : Surface Mount; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 1000V; Reverse Recovery Time (trr) : 500ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.3V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 1000V (1kV); Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-213AB
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EGP10G-E3/54 htmlspecialchars($datasheet_name)
EGP10G-E3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1A DO204AL; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR); Operating Temperature - Junction : -65°C ~ 150°C; Supplier Device Package : DO-204AL (DO-41); Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 400V; Reverse Recovery Time (trr) : 50ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.25V @ 1A
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1N4384GPHE3/73 htmlspecialchars($datasheet_name)
1N4384GPHE3/73
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1A DO204AC; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 400V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard
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1N5062GPHE3/73 htmlspecialchars($datasheet_name)
1N5062GPHE3/73
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 1A DO204AC; Base Part Number : 1N5062; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 800V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.2V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Standard; Part Status : Obsolete; Packaging : Tape & Box (TB)
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BY127MGPHE3/73 htmlspecialchars($datasheet_name)
BY127MGPHE3/73
Производитель: Vishay Semiconductor Diodes Division
DIODE GP 1.25KV 1.75A DO204; Base Part Number : BY127; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 1250V; Reverse Recovery Time (trr) : 2µs; Current - Average Rectified (Io) : 1.75A; Voltage - DC Reverse (Vr) (Max) : 1250V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Box (TB); Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.5V @ 5A
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BY133GPHE3/73
BY133GPHE3/73
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.3KV 1A DO204AC; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.2V @ 2A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 1300V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Box (TB); Base Part Number : BY133; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 1300V; Reverse Recovery Time (trr) : 2µs
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GP15GHE3/73 htmlspecialchars($datasheet_name)
GP15GHE3/73
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1.5A DO204AC; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 400V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A
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GP15JHE3/73 htmlspecialchars($datasheet_name)
GP15JHE3/73
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 1.5A DO204AC; Current - Reverse Leakage @ Vr : 5µA @ 600V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole
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GP15KHE3/73 htmlspecialchars($datasheet_name)
GP15KHE3/73
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 1.5A DO204AC; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 800V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Standard
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GP15MHE3/73 htmlspecialchars($datasheet_name)
GP15MHE3/73
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 1.5A DO204; Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 1000V; Diode Type : Standard; Part Status : Obsolete; Packaging : Tape & Box (TB); Base Part Number : GP15M; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 1000V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io)
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1N4383GPHE3/54 htmlspecialchars($datasheet_name)
1N4383GPHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO204AC; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io); Operating Temperature - Junction : -65°C ~ 175°C; Voltage - Forward (Vf) (Max) @ If : 1V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 200V; Supplier Device Package : DO-204AC (DO-15); Diode Type : Standard; Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 200V
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1N4384GPHE3/54 htmlspecialchars($datasheet_name)
1N4384GPHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1A DO204AC; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 400V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C
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1N4385GPHE3/54 htmlspecialchars($datasheet_name)
1N4385GPHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 1A DO204AC; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 600V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1V @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Standard
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1N5059GPHE3/54 htmlspecialchars($datasheet_name)
1N5059GPHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1A DO204AC; Voltage - Forward (Vf) (Max) @ If : 1.2V @ 1A; Operating Temperature - Junction : -65°C ~ 175°C; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 5µA @ 200V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io)
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1N5062GPHE3/54 htmlspecialchars($datasheet_name)
1N5062GPHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 1A DO204AC; Part Status : Obsolete; Packaging : Tape & Reel (TR); Diode Type : Standard; Voltage - DC Reverse (Vr) (Max) : 800V; Current - Average Rectified (Io) : 1A; Voltage - Forward (Vf) (Max) @ If : 1.2V @ 1A; Speed : Standard Recovery >500ns, > 200mA (Io); Reverse Recovery Time (trr) : 2µs; Current - Reverse Leakage @ Vr : 5µA @ 800V; Capacitance @ Vr, F : 15pF @ 4V, 1MHz; Mounting Type : Through Hole; Package / Case : DO-204AC, DO-15, Axial; Supplier Device Package : DO-204AC (DO-15); Operating Temperature - Junction : -65°C ~ 175°C; Base Part Number : 1N5062
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BY127MGPHE3/54 htmlspecialchars($datasheet_name)
BY127MGPHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GP 1.25KV 1.75A DO204; Base Part Number : BY127; Voltage - DC Reverse (Vr) (Max) : 1250V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR); Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 1250V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.5V @ 5A; Current - Average Rectified (Io) : 1.75A
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BY133GPHE3/54
BY133GPHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.3KV 1A DO204AC; Base Part Number : BY133; Voltage - Forward (Vf) (Max) @ If : 1.2V @ 2A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 1300V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR); Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 1300V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io)
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BY227MGPHE3/54
BY227MGPHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 1.25KV 2A DO204AC; Current - Average Rectified (Io) : 2A; Voltage - DC Reverse (Vr) (Max) : 1250V; Diode Type : Standard; Part Status : Active; Packaging : Tape & Reel (TR); Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 1250V; Reverse Recovery Time (trr) : 2µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.5V @ 5A
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GP15GHE3/54 htmlspecialchars($datasheet_name)
GP15GHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1.5A DO204AC; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 400V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard
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GP15JHE3/54 htmlspecialchars($datasheet_name)
GP15JHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 600V 1.5A DO204AC; Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 600V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A
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GP15KHE3/54 htmlspecialchars($datasheet_name)
GP15KHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 800V 1.5A DO204AC; Current - Reverse Leakage @ Vr : 5µA @ 800V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole
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GP15MHE3/54 htmlspecialchars($datasheet_name)
GP15MHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 1KV 1.5A DO204; Voltage - DC Reverse (Vr) (Max) : 1000V; Diode Type : Standard; Part Status : Obsolete; Base Part Number : GP15M; Operating Temperature - Junction : -65°C ~ 175°C; Packaging : Tape & Reel (TR); Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 1000V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A
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1N4004GPEHE3/73 htmlspecialchars($datasheet_name)
1N4004GPEHE3/73
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 400V 1A DO204AL; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Standard; Part Status : Obsolete; Packaging : Tape & Box (TB); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1A; Speed : Standard Recovery >500ns, > 200mA (Io); Reverse Recovery Time (trr) : 2µs; Current - Reverse Leakage @ Vr : 5µA @ 400V; Capacitance @ Vr, F : 8pF @ 4V, 1MHz; Mounting Type : Through Hole; Package / Case : DO-204AL, DO-41, Axial; Supplier Device Package : DO-204AL (DO-41); Operating Temperature - Junction : -65°C ~ 175°C; Base Part Number : 1N4004
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GP15BHE3/73 htmlspecialchars($datasheet_name)
GP15BHE3/73
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1.5A DO204AC; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 100V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard
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GP15DHE3/73 htmlspecialchars($datasheet_name)
GP15DHE3/73
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1.5A DO204AC; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 200V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A
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BYG10DHE3/TR3 htmlspecialchars($datasheet_name)
BYG10DHE3/TR3
Производитель: Vishay Semiconductor Diodes Division
DIODE AVALANCHE 200V 1.5A; Current - Reverse Leakage @ Vr : 1µA @ 200V; Reverse Recovery Time (trr) : 4µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Avalanche; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount
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BYG10GHE3/TR3 htmlspecialchars($datasheet_name)
BYG10GHE3/TR3
Производитель: Vishay Semiconductor Diodes Division
DIODE AVALANCHE 400V 1.5A; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 400V; Reverse Recovery Time (trr) : 4µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 400V; Diode Type : Avalanche
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BYG10JHE3/TR3 htmlspecialchars($datasheet_name)
BYG10JHE3/TR3
Производитель: Vishay Semiconductor Diodes Division
DIODE AVALANCHE 600V 1.5A; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 600V; Reverse Recovery Time (trr) : 4µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Avalanche
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BYG10KHE3/TR3 htmlspecialchars($datasheet_name)
BYG10KHE3/TR3
Производитель: Vishay Semiconductor Diodes Division
DIODE AVALANCHE 800V 1.5A; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Avalanche; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 800V; Reverse Recovery Time (trr) : 4µs
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BYG10MHE3/TR3 htmlspecialchars($datasheet_name)
BYG10MHE3/TR3
Производитель: Vishay Semiconductor Diodes Division
DIODE AVALANCHE 1KV 1.5A; Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 1000V; Reverse Recovery Time (trr) : 4µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Operating Temperature - Junction : -55°C ~ 150°C; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 1000V (1kV); Diode Type : Avalanche; Supplier Device Package : DO-214AC (SMA)
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GP15AHE3/54 htmlspecialchars($datasheet_name)
GP15AHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 50V 1.5A DO204AC; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Current - Reverse Leakage @ Vr : 5µA @ 50V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 50V; Diode Type : Standard
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GP15BHE3/54 htmlspecialchars($datasheet_name)
GP15BHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1.5A DO204AC; Current - Average Rectified (Io) : 1.5A; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Mounting Type : Through Hole; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard; Current - Reverse Leakage @ Vr : 5µA @ 100V; Reverse Recovery Time (trr) : 3.5µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A
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GP15DHE3/54 htmlspecialchars($datasheet_name)
GP15DHE3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 200V 1.5A DO204AC; Current - Reverse Leakage @ Vr : 5µA @ 200V; Reverse Recovery Time (trr) : 3.5µs; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AC (DO-15); Package / Case : DO-204AC, DO-15, Axial; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.1V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Standard; Mounting Type : Through Hole
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BYG10DHE3/TR htmlspecialchars($datasheet_name)
BYG10DHE3/TR
Производитель: Vishay Semiconductor Diodes Division
DIODE AVALANCHE 200V 1.5A; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 200V; Reverse Recovery Time (trr) : 4µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 200V; Diode Type : Avalanche
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BYG10GHE3/TR htmlspecialchars($datasheet_name)
BYG10GHE3/TR
Производитель: Vishay Semiconductor Diodes Division
DIODE AVALANCHE 400V 1.5A; Diode Type : Avalanche; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 400V; Reverse Recovery Time (trr) : 4µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 400V
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BYG10JHE3/TR htmlspecialchars($datasheet_name)
BYG10JHE3/TR
Производитель: Vishay Semiconductor Diodes Division
DIODE AVALANCHE 600V 1.5A; Reverse Recovery Time (trr) : 4µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 600V; Diode Type : Avalanche; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 600V
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BYG10KHE3/TR htmlspecialchars($datasheet_name)
BYG10KHE3/TR
Производитель: Vishay Semiconductor Diodes Division
DIODE AVALANCHE 800V 1.5A; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 800V; Reverse Recovery Time (trr) : 4µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 800V; Diode Type : Avalanche; Operating Temperature - Junction : -55°C ~ 150°C
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BYG10MHE3/TR htmlspecialchars($datasheet_name)
BYG10MHE3/TR
Производитель: Vishay Semiconductor Diodes Division
DIODE AVALANCHE 1KV 1.5A; Operating Temperature - Junction : -55°C ~ 150°C; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Current - Reverse Leakage @ Vr : 1µA @ 1000V; Reverse Recovery Time (trr) : 4µs; Speed : Standard Recovery >500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 1.15V @ 1.5A; Current - Average Rectified (Io) : 1.5A; Voltage - DC Reverse (Vr) (Max) : 1000V (1kV); Diode Type : Avalanche
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SS19-E3/61T
SS19-E3/61T
Производитель: Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 90V 1A DO214AC; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 90V; Diode Type : Schottky; Supplier Device Package : DO-214AC (SMA); Package / Case : DO-214AC, SMA; Mounting Type : Surface Mount; Speed : Fast Recovery =< 500ns, > 200mA (Io)
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SS2PH9HM3/84A htmlspecialchars($datasheet_name)
SS2PH9HM3/84A
Производитель: Vishay Semiconductor Diodes Division
DIODE SCHOTTKY 90V 2A DO220AA; Diode Type : Schottky; Operating Temperature - Junction : -55°C ~ 175°C; Supplier Device Package : DO-220AA (SMP); Package / Case : DO-220AA; Mounting Type : Surface Mount; Capacitance @ Vr, F : 65pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 1µA @ 90V; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 800mV @ 2A; Current - Average Rectified (Io) : 2A; Voltage - DC Reverse (Vr) (Max) : 90V
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FGP10B-E3/54 htmlspecialchars($datasheet_name)
FGP10B-E3/54
Производитель: Vishay Semiconductor Diodes Division
DIODE GEN PURP 100V 1A DO204AL; Package / Case : DO-204AL, DO-41, Axial; Mounting Type : Through Hole; Capacitance @ Vr, F : 25pF @ 4V, 1MHz; Current - Reverse Leakage @ Vr : 2µA @ 100V; Reverse Recovery Time (trr) : 35ns; Speed : Fast Recovery =< 500ns, > 200mA (Io); Voltage - Forward (Vf) (Max) @ If : 950mV @ 1A; Current - Average Rectified (Io) : 1A; Voltage - DC Reverse (Vr) (Max) : 100V; Diode Type : Standard; Operating Temperature - Junction : -65°C ~ 175°C; Supplier Device Package : DO-204AL (DO-41)
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