| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIHA120N60E-GE3 | VISHAY |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 66A Gate charge: 45nC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA125N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 66A; 179W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 66A Power dissipation: 179W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: THT Gate charge: 47nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA12N50E-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 32W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 32W Case: TO220FP Mounting: THT Kind of package: tube Gate charge: 50nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 21A Drain-source voltage: 500V Drain current: 6.6A On-state resistance: 0.38Ω кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA15N50E-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.2A Pulsed drain current: 28A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 |
SIHA15N60E-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 478 шт: термін постачання 14-21 дні (днів) |
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| SIHA15N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 29A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 29A Gate charge: 53nC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA15N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.35Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 54nC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA17N80AEF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 32A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.1A Pulsed drain current: 32A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 305mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA17N80E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 45A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 45A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: THT Gate charge: 122nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA180N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Pulsed drain current: 44A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA20N50E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: THT Gate charge: 92nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA21N65EF-E3 | VISHAY |
SIHA21N65EF-E3 THT N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA21N80AEF-GE3 | VISHAY |
SIHA21N80AEF-GE3 THT N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA22N60AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 49A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 5A Pulsed drain current: 49A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA22N60EF-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 46A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 182mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA240N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Pulsed drain current: 30A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.24Ω Mounting: THT Gate charge: 23nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA24N65EF-GE3 | VISHAY |
SIHA24N65EF-GE3 THT N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA24N80AE-GE3 | VISHAY |
SIHA24N80AE-GE3 THT N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA25N50E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA2N80E-GE3 | VISHAY |
SIHA2N80E-GE3 THT N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA4N80E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Pulsed drain current: 11A Power dissipation: 69W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.27Ω Mounting: THT Gate charge: 32nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA5N80AE-GE3 | VISHAY |
SIHA5N80AE-GE3 THT N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA690N60E-GE3 | VISHAY |
SIHA690N60E-GE3 THT N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHA6N80AE-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 10A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.2A Pulsed drain current: 10A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.95Ω Mounting: THT Gate charge: 22.5nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB053N60E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 128A; 278W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 47A Pulsed drain current: 128A Power dissipation: 278W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 54mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB065N60E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 116A; 250W Drain-source voltage: 600V Drain current: 25A On-state resistance: 65mΩ Type of transistor: N-MOSFET Power dissipation: 250W Polarisation: unipolar Kind of package: reel; tape Gate charge: 74nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 116A Mounting: SMD Case: D2PAK; TO263 кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB068N60EF-GE3 | VISHAY |
SIHB068N60EF-GE3 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB100N60E-GE3 | VISHAY |
SIHB100N60E-GE3 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB11N80AE-GE3 | VISHAY |
SIHB11N80AE-GE3 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB11N80E-GE3 | VISHAY |
SIHB11N80E-GE3 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB120N60E-T5-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Pulsed drain current: 66A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB125N60EF-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W Type of transistor: N-MOSFET Power dissipation: 179W Polarisation: unipolar Kind of package: reel; tape Gate charge: 47nC Kind of channel: enhancement Gate-source voltage: ±30V Pulsed drain current: 66A Mounting: SMD Case: D2PAK; TO263 Drain-source voltage: 600V Drain current: 16A On-state resistance: 0.125Ω кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 |
SIHB12N60E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 58nC кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| SIHB12N60ET1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 58nC Pulsed drain current: 27A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB12N65E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 28A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB15N50E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.2A Pulsed drain current: 28A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB15N60E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 9.6A Pulsed drain current: 39A Power dissipation: 180W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB15N65E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10A Pulsed drain current: 38A Power dissipation: 34W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB17N80AE-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 32A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB17N80E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Pulsed drain current: 45A Power dissipation: 208W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.29Ω Mounting: SMD Gate charge: 122nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB180N60E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB20N50E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 42A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 184mΩ Mounting: SMD Gate charge: 92nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB21N60EF-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 53A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 14A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 176mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 84nC Pulsed drain current: 53A кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB21N65EF-GE3 | VISHAY |
SIHB21N65EF-GE3 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB21N80AE-GE3 | VISHAY |
SIHB21N80AE-GE3 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB22N60AE-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 51A Pulsed drain current: 268A Power dissipation: 520W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 30mΩ Mounting: SMD Gate charge: 443nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
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SIHB22N60E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 56A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 86nC Kind of package: tube Kind of channel: enhancement кількість в упаковці: 50 шт |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| SIHB22N60EF-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 46A Power dissipation: 179W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 182mΩ Mounting: SMD Gate charge: 96nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB22N60EL-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 45A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 45A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 197mΩ Mounting: SMD Gate charge: 74nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB22N60ET1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 56A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB22N60ET5-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Pulsed drain current: 56A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB22N65E-GE3 | VISHAY |
SIHB22N65E-GE3 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB23N60E-GE3 | VISHAY |
SIHB23N60E-GE3 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB24N65E-GE3 | VISHAY |
SIHB24N65E-GE3 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB24N65EF-GE3 | VISHAY |
SIHB24N65EF-GE3 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB24N65EFT1-GE3 | VISHAY |
SIHB24N65EFT1-GE3 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB24N80AE-GE3 | VISHAY |
SIHB24N80AE-GE3 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB25N50E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB28N60EF-GE3 | VISHAY |
SIHB28N60EF-GE3 SMD N channel transistors |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| SIHB30N60E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 76A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 250W Gate charge: 130nC Pulsed drain current: 76A кількість в упаковці: 1000 шт |
товару немає в наявності |
В кошику од. на суму грн. |
| SIHA120N60E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Gate charge: 45nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 66A
Gate charge: 45nC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SIHA125N60EF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 66A; 179W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 66A
Power dissipation: 179W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 66A; 179W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 66A
Power dissipation: 179W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 47nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SIHA12N50E-E3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 32W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 50nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 21A
Drain-source voltage: 500V
Drain current: 6.6A
On-state resistance: 0.38Ω
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 6.6A; Idm: 21A; 32W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 32W
Case: TO220FP
Mounting: THT
Kind of package: tube
Gate charge: 50nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 21A
Drain-source voltage: 500V
Drain current: 6.6A
On-state resistance: 0.38Ω
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SIHA15N50E-E3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.2A
Pulsed drain current: 28A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.2A
Pulsed drain current: 28A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SIHA15N60E-E3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 478 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 236.69 грн |
| 5+ | 206.27 грн |
| 8+ | 151.73 грн |
| 20+ | 143.46 грн |
| SIHA15N80AE-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 29A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 29A
Gate charge: 53nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 29A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 29A
Gate charge: 53nC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SIHA15N80AEF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 54nC
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 54nC
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SIHA17N80AEF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 32A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.1A
Pulsed drain current: 32A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 305mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.1A; Idm: 32A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.1A
Pulsed drain current: 32A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 305mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SIHA17N80E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 45A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 45A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; Idm: 45A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 45A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: THT
Gate charge: 122nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SIHA180N60E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 44A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 44A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SIHA20N50E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 34W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: THT
Gate charge: 92nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SIHA21N65EF-E3 |
|
Виробник: VISHAY
SIHA21N65EF-E3 THT N channel transistors
SIHA21N65EF-E3 THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SIHA21N80AEF-GE3 |
|
Виробник: VISHAY
SIHA21N80AEF-GE3 THT N channel transistors
SIHA21N80AEF-GE3 THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SIHA22N60AE-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 49A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 49A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 5A; Idm: 49A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Pulsed drain current: 49A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SIHA22N60EF-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SIHA240N60E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 30A; 31W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Pulsed drain current: 30A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.24Ω
Mounting: THT
Gate charge: 23nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SIHA24N65EF-GE3 |
|
Виробник: VISHAY
SIHA24N65EF-GE3 THT N channel transistors
SIHA24N65EF-GE3 THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SIHA24N80AE-GE3 |
|
Виробник: VISHAY
SIHA24N80AE-GE3 THT N channel transistors
SIHA24N80AE-GE3 THT N channel transistors
товару немає в наявності
В кошику
од. на суму грн.
| SIHA25N50E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SIHA2N80E-GE3 |
|
Виробник: VISHAY
SIHA2N80E-GE3 THT N channel transistors
SIHA2N80E-GE3 THT N channel transistors
товару немає в наявності
В кошику
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| SIHA4N80E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 11A
Power dissipation: 69W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.27Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 11A; 69W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 11A
Power dissipation: 69W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.27Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| SIHA5N80AE-GE3 |
|
Виробник: VISHAY
SIHA5N80AE-GE3 THT N channel transistors
SIHA5N80AE-GE3 THT N channel transistors
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| SIHA690N60E-GE3 |
|
Виробник: VISHAY
SIHA690N60E-GE3 THT N channel transistors
SIHA690N60E-GE3 THT N channel transistors
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В кошику
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| SIHA6N80AE-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Pulsed drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 22.5nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.2A; Idm: 10A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.2A
Pulsed drain current: 10A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 22.5nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| SIHB053N60E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 128A; 278W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 128A
Power dissipation: 278W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 47A; Idm: 128A; 278W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 47A
Pulsed drain current: 128A
Power dissipation: 278W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| SIHB065N60E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 116A; 250W
Drain-source voltage: 600V
Drain current: 25A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 74nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 116A
Mounting: SMD
Case: D2PAK; TO263
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 25A; Idm: 116A; 250W
Drain-source voltage: 600V
Drain current: 25A
On-state resistance: 65mΩ
Type of transistor: N-MOSFET
Power dissipation: 250W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 74nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 116A
Mounting: SMD
Case: D2PAK; TO263
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| SIHB068N60EF-GE3 |
|
Виробник: VISHAY
SIHB068N60EF-GE3 SMD N channel transistors
SIHB068N60EF-GE3 SMD N channel transistors
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од. на суму грн.
| SIHB100N60E-GE3 |
|
Виробник: VISHAY
SIHB100N60E-GE3 SMD N channel transistors
SIHB100N60E-GE3 SMD N channel transistors
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од. на суму грн.
| SIHB11N80AE-GE3 |
|
Виробник: VISHAY
SIHB11N80AE-GE3 SMD N channel transistors
SIHB11N80AE-GE3 SMD N channel transistors
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В кошику
од. на суму грн.
| SIHB11N80E-GE3 |
|
Виробник: VISHAY
SIHB11N80E-GE3 SMD N channel transistors
SIHB11N80E-GE3 SMD N channel transistors
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од. на суму грн.
| SIHB120N60E-T5-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Pulsed drain current: 66A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SIHB125N60EF-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W
Type of transistor: N-MOSFET
Power dissipation: 179W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 66A
Mounting: SMD
Case: D2PAK; TO263
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.125Ω
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; Idm: 66A; 179W
Type of transistor: N-MOSFET
Power dissipation: 179W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 47nC
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 66A
Mounting: SMD
Case: D2PAK; TO263
Drain-source voltage: 600V
Drain current: 16A
On-state resistance: 0.125Ω
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| SIHB12N60E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 58nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 58nC
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| SIHB12N60ET1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 58nC
Pulsed drain current: 27A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 58nC
Pulsed drain current: 27A
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| SIHB12N65E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| SIHB15N50E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.2A
Pulsed drain current: 28A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.2A; Idm: 28A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.2A
Pulsed drain current: 28A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| SIHB15N60E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.6A; Idm: 39A; 180W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.6A
Pulsed drain current: 39A
Power dissipation: 180W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| SIHB15N65E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10A; Idm: 38A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10A
Pulsed drain current: 38A
Power dissipation: 34W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
од. на суму грн.
| SIHB17N80AE-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 32A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 32A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 32A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| SIHB17N80E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 45A
Power dissipation: 208W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 45A; 208W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Pulsed drain current: 45A
Power dissipation: 208W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 122nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| SIHB180N60E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| SIHB20N50E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 42A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 184mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| SIHB21N60EF-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 53A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 176mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 84nC
Pulsed drain current: 53A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 53A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 14A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 176mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 84nC
Pulsed drain current: 53A
кількість в упаковці: 1 шт
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В кошику
од. на суму грн.
| SIHB21N65EF-GE3 |
|
Виробник: VISHAY
SIHB21N65EF-GE3 SMD N channel transistors
SIHB21N65EF-GE3 SMD N channel transistors
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од. на суму грн.
| SIHB21N80AE-GE3 |
|
Виробник: VISHAY
SIHB21N80AE-GE3 SMD N channel transistors
SIHB21N80AE-GE3 SMD N channel transistors
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| SIHB22N60AE-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 268A
Power dissipation: 520W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 443nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Pulsed drain current: 268A
Power dissipation: 520W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 443nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
В кошику
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| SIHB22N60E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 50 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
кількість в упаковці: 50 шт
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од. на суму грн.
| SIHB22N60EF-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 46A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 46A
Power dissipation: 179W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 182mΩ
Mounting: SMD
Gate charge: 96nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
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| SIHB22N60EL-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 45A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 45A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 197mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 45A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 45A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 197mΩ
Mounting: SMD
Gate charge: 74nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
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| SIHB22N60ET1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
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од. на суму грн.
| SIHB22N60ET5-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
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од. на суму грн.
| SIHB22N65E-GE3 |
|
Виробник: VISHAY
SIHB22N65E-GE3 SMD N channel transistors
SIHB22N65E-GE3 SMD N channel transistors
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од. на суму грн.
| SIHB23N60E-GE3 |
|
Виробник: VISHAY
SIHB23N60E-GE3 SMD N channel transistors
SIHB23N60E-GE3 SMD N channel transistors
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од. на суму грн.
| SIHB24N65E-GE3 |
|
Виробник: VISHAY
SIHB24N65E-GE3 SMD N channel transistors
SIHB24N65E-GE3 SMD N channel transistors
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од. на суму грн.
| SIHB24N65EF-GE3 |
|
Виробник: VISHAY
SIHB24N65EF-GE3 SMD N channel transistors
SIHB24N65EF-GE3 SMD N channel transistors
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| SIHB24N65EFT1-GE3 |
|
Виробник: VISHAY
SIHB24N65EFT1-GE3 SMD N channel transistors
SIHB24N65EFT1-GE3 SMD N channel transistors
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од. на суму грн.
| SIHB24N80AE-GE3 |
|
Виробник: VISHAY
SIHB24N80AE-GE3 SMD N channel transistors
SIHB24N80AE-GE3 SMD N channel transistors
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од. на суму грн.
| SIHB25N50E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
товару немає в наявності
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од. на суму грн.
| SIHB28N60EF-GE3 |
|
Виробник: VISHAY
SIHB28N60EF-GE3 SMD N channel transistors
SIHB28N60EF-GE3 SMD N channel transistors
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од. на суму грн.
| SIHB30N60E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 76A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 250W
Gate charge: 130nC
Pulsed drain current: 76A
кількість в упаковці: 1000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; Idm: 76A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 250W
Gate charge: 130nC
Pulsed drain current: 76A
кількість в упаковці: 1000 шт
товару немає в наявності
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од. на суму грн.