| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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IRF740SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF740STRLPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.3A Pulsed drain current: 40A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.55Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1.5KE18CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 13 inch reel; 1.5kW Type of diode: TVS Semiconductor structure: bidirectional Mounting: THT Kind of package: 13 inch reel Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 59.5A Manufacturer series: 1.5KE Peak pulse power dissipation: 1.5kW Case: DO201 Features of semiconductor devices: glass passivated Technology: TransZorb® Leakage current: 1µA |
на замовлення 356 шт: термін постачання 14-30 дні (днів) |
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1.5KE180CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 13 inch reel; 1.5kW Type of diode: TVS Semiconductor structure: bidirectional Mounting: THT Kind of package: 13 inch reel Max. forward impulse current: 6.1A Max. off-state voltage: 154V Breakdown voltage: 180V Manufacturer series: 1.5KE Peak pulse power dissipation: 1.5kW Case: DO201 Features of semiconductor devices: glass passivated Technology: TransZorb® Leakage current: 1µA |
на замовлення 1812 шт: термін постачання 14-30 дні (днів) |
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1.5KE18A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; 13 inch reel Type of diode: TVS Semiconductor structure: unidirectional Mounting: THT Kind of package: 13 inch reel Max. forward impulse current: 59.5A Max. off-state voltage: 15.3V Breakdown voltage: 18V Manufacturer series: 1.5KE Peak pulse power dissipation: 1.5kW Case: DO201 Features of semiconductor devices: glass passivated Technology: TransZorb® Leakage current: 1µA |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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P6KE200A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; 13 inch reel Type of diode: TVS Semiconductor structure: unidirectional Mounting: THT Kind of package: 13 inch reel Leakage current: 1µA Max. forward impulse current: 2.2A Max. off-state voltage: 171V Breakdown voltage: 200V Peak pulse power dissipation: 0.6kW Case: DO15 Features of semiconductor devices: glass passivated Manufacturer series: P6KE Technology: TransZorb® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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1N4937-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; 13 inch reel; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Capacitance: 12pF Kind of package: 13 inch reel Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Leakage current: 0.1mA Features of semiconductor devices: fast switching Quantity in set/package: 5500pcs. |
на замовлення 2875 шт: термін постачання 14-30 дні (днів) |
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1N4937-E3/73 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 1A Semiconductor structure: single diode Capacitance: 12pF Kind of package: Ammo Pack Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.2V Reverse recovery time: 200ns Leakage current: 0.1mA Features of semiconductor devices: fast switching |
на замовлення 2593 шт: термін постачання 14-30 дні (днів) |
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1N5817-E3/54 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.45V Max. forward impulse current: 25A Kind of package: 13 inch reel |
на замовлення 3045 шт: термін постачання 14-30 дні (днів) |
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1N5817-E3/73 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Case: DO41 Max. forward voltage: 0.45V Max. forward impulse current: 25A Kind of package: Ammo Pack |
на замовлення 7393 шт: термін постачання 14-30 дні (днів) |
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1N5819-E3/54 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V Case: DO41 Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 0.6V Load current: 1A Max. forward impulse current: 25A Max. off-state voltage: 40V Kind of package: 13 inch reel |
на замовлення 4731 шт: термін постачання 14-30 дні (днів) |
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1N5819-E3/73 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V Case: DO41 Type of diode: Schottky rectifying Semiconductor structure: single diode Mounting: THT Max. forward voltage: 0.6V Load current: 1A Max. forward impulse current: 25A Max. off-state voltage: 40V Kind of package: Ammo Pack |
на замовлення 1499 шт: термін постачання 14-30 дні (днів) |
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BAV99-E3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.15A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Leakage current: 50µA Power dissipation: 0.3W Kind of package: 7 inch reel Features of semiconductor devices: fast switching; small signal Quantity in set/package: 3000pcs. |
на замовлення 1466 шт: термін постачання 14-30 дні (днів) |
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BAV99-HE3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.15A Reverse recovery time: 6ns Semiconductor structure: double series Capacitance: 1.5pF Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4.5A Leakage current: 50µA Power dissipation: 0.3W Kind of package: 7 inch reel Application: automotive industry Features of semiconductor devices: fast switching; small signal Quantity in set/package: 3000pcs. |
на замовлення 10 шт: термін постачання 14-30 дні (днів) |
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1N4007GP-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Kind of package: 13 inch reel Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V Capacitance: 8pF Reverse recovery time: 2µs Quantity in set/package: 5500pcs. Features of semiconductor devices: glass passivated |
на замовлення 7994 шт: термін постачання 14-30 дні (днів) |
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357B0102MXB251S22 | VISHAY |
Category: Cond. plastic single turn potentiometersDescription: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 1kΩ Tolerance: ±20% Power: 1W Characteristics: linear Shaft diameter: 6.35mm Track material: plastic Mechanical durability: 10000000 cycles Shaft surface: smooth Potentiometer features: without limiters Thread length: 8mm Shaft length: 14mm L shaft length: 22mm Linearity tolerance: ±2% Manufacturer series: 357 Fastening thread: 3/8"x32UNEF |
на замовлення 56 шт: термін постачання 14-30 дні (днів) |
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357B2102MAB251S22 | VISHAY |
Category: Cond. plastic single turn potentiometersDescription: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 1kΩ Tolerance: ±20% Power: 1W Characteristics: linear Shaft diameter: 6.35mm Track material: plastic Shaft surface: smooth Shaft length: 14mm Thread length: 8mm L shaft length: 22mm Fastening thread: 3/8"x32UNEF Electrical rotation angle: 340° Linearity tolerance: ±2% Manufacturer series: 357 Mechanical durability: 10000000 cycles |
на замовлення 91 шт: термін постачання 14-30 дні (днів) |
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VJ1206A100KXAAC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206 Operating temperature: -55...125°C Dielectric: C0G (NP0) Type of capacitor: ceramic Mounting: SMD Capacitance: 10pF Tolerance: ±10% Operating voltage: 50V Case - inch: 1206 Case - mm: 3216 |
на замовлення 2440 шт: термін постачання 14-30 дні (днів) |
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CRCW1206100KFKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; 200V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 100kΩ Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 107199 шт: термін постачання 14-30 дні (днів) |
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BAS85-GS08 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW Type of diode: Schottky switching Case: MiniMELF; SOD80 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 10pF Features of semiconductor devices: small signal Max. forward voltage: 0.24V Max. forward impulse current: 0.6A Kind of package: 7 inch reel Power dissipation: 0.2W Quantity in set/package: 2500pcs. Max. load current: 0.3A |
на замовлення 45747 шт: термін постачання 14-30 дні (днів) |
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BAS85-GS18 | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns Type of diode: Schottky switching Case: MiniMELF; SOD80 Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Capacitance: 10pF Features of semiconductor devices: small signal Max. forward voltage: 0.8V Leakage current: 2µA Max. forward impulse current: 0.6A Reverse recovery time: 5ns Kind of package: 13 inch reel Power dissipation: 0.2W Quantity in set/package: 10000pcs. |
на замовлення 6676 шт: термін постачання 14-30 дні (днів) |
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NTCLE100E3472JB0 | VISHAY |
Category: THT measurement NTC thermistorsDescription: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW Resistance: 4.7kΩ Power: 0.5W Mounting: THT Operating temperature: -40...125°C Material constant B: 3977K Type of sensor: NTC thermistor |
на замовлення 7169 шт: термін постачання 14-30 дні (днів) |
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1.5KE47CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; 1.5KE Type of diode: TVS Max. off-state voltage: 40.2V Breakdown voltage: 47.05V Max. forward impulse current: 23.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 729 шт: термін постачання 14-30 дні (днів) |
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| SIHA25N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHB25N50E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 250W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHG25N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 250W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP25N50E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 16A Pulsed drain current: 50A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.145Ω Mounting: THT Gate charge: 86nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MBR10100-E3/4W | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.65V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.65V Max. forward impulse current: 150A Kind of package: tube Quantity in set/package: 50pcs. |
на замовлення 658 шт: термін постачання 14-30 дні (днів) |
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BZX85C12-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 12V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 12V Mounting: THT Tolerance: ±5% Kind of package: Ammo Pack Case: DO41 Semiconductor structure: single diode |
на замовлення 12121 шт: термін постачання 14-30 дні (днів) |
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BZX85C5V1-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 5.1V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 5.1V Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Kind of package: Ammo Pack |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF540PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 110A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF540SPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 20A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 110A |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLLR4400 | VISHAY |
Category: THT LEDs RoundDescription: LED; red; 3mm; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4VDC Type of diode: LED LED colour: red LED diameter: 3mm Luminosity: 0.63...1.2mcd Viewing angle: 50° Wavelength: 612...625nm LED lens: diffused; red LED current: 2mA Mounting: THT Front: convex Operating voltage: 1.9...2.4V DC Number of terminals: 2 Terminal pitch: 2.54mm |
на замовлення 1172 шт: термін постачання 14-30 дні (днів) |
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TLLR4400-AS12Z | VISHAY |
Category: THT LEDs RoundDescription: LED; red; 3mm; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4VDC Type of diode: LED LED colour: red LED diameter: 3mm Luminosity: 0.63...1.2mcd Viewing angle: 25° Wavelength: 612...625nm LED lens: diffused; red LED current: 2mA Mounting: THT Front: convex Operating voltage: 1.9...2.4V DC Number of terminals: 2 Terminal pitch: 2.54mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TLLR4401 | VISHAY |
Category: THT LEDs RoundDescription: LED; red; 3mm; 1÷2mcd; 50°; Front: convex; 1.9÷2.4VDC; No.of term: 2 Type of diode: LED LED colour: red LED diameter: 3mm Luminosity: 1...2mcd Viewing angle: 50° Wavelength: 612...625nm LED lens: diffused; red LED current: 2mA Mounting: THT Front: convex Operating voltage: 1.9...2.4V DC Number of terminals: 2 Terminal pitch: 2.54mm |
на замовлення 4874 шт: термін постачання 14-30 дні (днів) |
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BZX55C8V2-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 8.2V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 8.2V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 10869 шт: термін постачання 14-30 дні (днів) |
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VJ1206G107MXYTW1BC | VISHAY |
Category: MLCC SMD capacitorsDescription: Capacitor: ceramic; 100uF; 6.3V; X5R; ±20%; SMD; 1206 Type of capacitor: ceramic Capacitance: 100µF Operating voltage: 6.3V Dielectric: X5R Tolerance: ±20% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...85°C |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CRCW1206390KFKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 390kΩ; 0.25W; ±1%; 200V; -55÷155°C Mounting: SMD Type of resistor: thick film Operating temperature: -55...155°C Power: 0.25W Tolerance: ±1% Resistance: 390kΩ Operating voltage: 200V Case - inch: 1206 Case - mm: 3216 |
на замовлення 198 шт: термін постачання 14-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
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B340A-E3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; 7 inch reel Type of diode: Schottky rectifying Mounting: SMD Case: SMA Max. forward voltage: 0.55V Load current: 3A Max. off-state voltage: 40V Max. forward impulse current: 65A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. Semiconductor structure: single diode |
на замовлення 7388 шт: термін постачання 14-30 дні (днів) |
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SS12-E3/61T | VISHAY |
Category: SMD Schottky diodesDescription: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; 7 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. |
на замовлення 1979 шт: термін постачання 14-30 дні (днів) |
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SMBJ24A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: 7 inch reel; tape Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 5199 шт: термін постачання 14-30 дні (днів) |
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SMBJ24A-E3/5B | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 24V Breakdown voltage: 26.7...29.5V Max. forward impulse current: 15.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: 13 inch reel; tape Technology: TransZorb® Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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US1M-E3/5AT | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DO214AC; SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: 13 inch reel Leakage current: 50µA Quantity in set/package: 7500pcs. |
на замовлення 2152 шт: термін постачання 14-30 дні (днів) |
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US1M-E3/61T | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Capacitance: 10pF Case: DO214AC; SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: 7 inch reel Quantity in set/package: 1800pcs. |
на замовлення 10261 шт: термін постачання 14-30 дні (днів) |
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US1MHE3_A/H | VISHAY |
Category: SMD universal diodesDescription: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 1kV Load current: 1A Reverse recovery time: 75ns Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Case: DO214AC; SMA Max. forward voltage: 1.7V Max. forward impulse current: 30A Kind of package: 7 inch reel Leakage current: 50µA Application: automotive industry Quantity in set/package: 1800pcs. |
на замовлення 739 шт: термін постачання 14-30 дні (днів) |
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IRFZ44PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 67nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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MBR1645-E3/45 | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 16A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 0.57V Kind of package: tube Quantity in set/package: 50pcs. Max. forward impulse current: 150A |
на замовлення 2400 шт: термін постачання 14-30 дні (днів) |
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UF5408-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 150A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 3A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: 13 inch reel Max. forward impulse current: 150A Case: DO201AD Max. forward voltage: 1V Reverse recovery time: 75ns Quantity in set/package: 1400pcs. |
на замовлення 3309 шт: термін постачання 14-30 дні (днів) |
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BZX55C15-TAP | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 15V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 7407 шт: термін постачання 14-30 дні (днів) |
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BZX55C15-TR | VISHAY |
Category: THT Zener diodesDescription: Diode: Zener; 0.5W; 15V; 14 inch reel; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 15V Kind of package: 14 inch reel Case: DO35 Mounting: THT Tolerance: ±6% Semiconductor structure: single diode Quantity in set/package: 10000pcs. |
на замовлення 1097 шт: термін постачання 14-30 дні (днів) |
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DG390BDJ-E3 | VISHAY |
Category: Analog multiplexers and switchesDescription: IC: analog switch; SPDT; Ch: 2; DIP16; -15÷15V; tube Type of integrated circuit: analog switch Output configuration: SPDT Number of channels: 2 Case: DIP16 Supply voltage: -15...15V Mounting: THT Kind of package: tube |
на замовлення 71 шт: термін постачання 14-30 дні (днів) |
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1N4148W-E3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Kind of package: 7 inch reel Max. forward impulse current: 0.5A Case: SOD123 Max. forward voltage: 1.2V Reverse recovery time: 4ns Quantity in set/package: 3000pcs. Capacitance: 1.5pF Leakage current: 0.1mA |
на замовлення 9739 шт: термін постачання 14-30 дні (днів) |
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1N4148WS-E3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Kind of package: 7 inch reel Max. forward impulse current: 0.35A Case: SOD323 Max. forward voltage: 1.2V Reverse recovery time: 4ns Quantity in set/package: 3000pcs. Capacitance: 4pF Leakage current: 0.1mA |
на замовлення 5984 шт: термін постачання 14-30 дні (днів) |
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1N4148WS-G3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: SOD323 Max. forward voltage: 1.2V Max. forward impulse current: 0.35A Leakage current: 0.1mA Kind of package: 7 inch reel Quantity in set/package: 3000pcs. |
на замовлення 3796 шт: термін постачання 14-30 дні (днів) |
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1N4148WS-HE3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.2V Type of diode: switching Mounting: SMD Max. off-state voltage: 0.1kV Load current: 0.15A Reverse recovery time: 4ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; small signal Capacitance: 4pF Case: SOD323 Max. forward voltage: 1.2V Max. forward impulse current: 0.35A Leakage current: 0.1mA Kind of package: 7 inch reel Application: automotive industry Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TEMT7000X01 | VISHAY |
Category: PhototransistorsDescription: Phototransistor; 0805; SMD; λp max: 850nm; 20V; 60°; λd: 470÷1090nm Mounting: SMD Case - mm: 2012 Wavelength: 470...1090nm Type of photoelement: phototransistor Wavelength of peak sensitivity: 850nm Collector-emitter voltage: 20V Viewing angle: 60° Case - inch: 0805 LED lens: transparent |
на замовлення 1426 шт: термін постачання 14-30 дні (днів) |
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UF4007-E3/54 | VISHAY |
Category: THT universal diodesDescription: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 75ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated; ultrafast switching Kind of package: 13 inch reel Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.7V Reverse recovery time: 75ns Leakage current: 50µA Capacitance: 17pF Quantity in set/package: 5500pcs. |
на замовлення 10193 шт: термін постачання 14-30 дні (днів) |
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IRFP064PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 70A; 300W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 70A Power dissipation: 300W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 0.19µC Kind of package: tube Kind of channel: enhancement |
на замовлення 227 шт: термін постачання 14-30 дні (днів) |
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293D107X0010D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 100uF; 10VDC; SMD; D; 2917; ±20%; -55÷125°C Type of capacitor: tantalum Capacitance: 100µF Operating voltage: 10V DC Mounting: SMD Case: D Case - inch: 2917 Case - mm: 7343 Tolerance: ±20% Operating temperature: -55...125°C Manufacturer series: Tantamount |
на замовлення 688 шт: термін постачання 14-30 дні (днів) |
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293D107X9010C2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 100uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 100µF Operating voltage: 10V DC Mounting: SMD Case: C Case - inch: 2312 Case - mm: 6032 Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount |
на замовлення 11360 шт: термін постачання 14-30 дні (днів) |
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| IRF740SPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| IRF740STRLPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.3A; Idm: 40A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.3A
Pulsed drain current: 40A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.55Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| 1.5KE18CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Kind of package: 13 inch reel
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 18V; 59.5A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Kind of package: 13 inch reel
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 59.5A
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
на замовлення 356 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.17 грн |
| 100+ | 24.96 грн |
| 250+ | 22.08 грн |
| 1.5KE180CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Kind of package: 13 inch reel
Max. forward impulse current: 6.1A
Max. off-state voltage: 154V
Breakdown voltage: 180V
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 180V; 6.1A; bidirectional; DO201; 13 inch reel; 1.5kW
Type of diode: TVS
Semiconductor structure: bidirectional
Mounting: THT
Kind of package: 13 inch reel
Max. forward impulse current: 6.1A
Max. off-state voltage: 154V
Breakdown voltage: 180V
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
на замовлення 1812 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 49.68 грн |
| 12+ | 35.26 грн |
| 100+ | 25.95 грн |
| 500+ | 21.17 грн |
| 1000+ | 19.36 грн |
| 1400+ | 18.62 грн |
| 1.5KE18A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: 13 inch reel
Max. forward impulse current: 59.5A
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 18V; 59.5A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: 13 inch reel
Max. forward impulse current: 59.5A
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Manufacturer series: 1.5KE
Peak pulse power dissipation: 1.5kW
Case: DO201
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Leakage current: 1µA
товару немає в наявності
В кошику
од. на суму грн.
| P6KE200A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; 13 inch reel
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: 13 inch reel
Leakage current: 1µA
Max. forward impulse current: 2.2A
Max. off-state voltage: 171V
Breakdown voltage: 200V
Peak pulse power dissipation: 0.6kW
Case: DO15
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Technology: TransZorb®
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 600W; 200V; 2.2A; unidirectional; DO15; 13 inch reel
Type of diode: TVS
Semiconductor structure: unidirectional
Mounting: THT
Kind of package: 13 inch reel
Leakage current: 1µA
Max. forward impulse current: 2.2A
Max. off-state voltage: 171V
Breakdown voltage: 200V
Peak pulse power dissipation: 0.6kW
Case: DO15
Features of semiconductor devices: glass passivated
Manufacturer series: P6KE
Technology: TransZorb®
товару немає в наявності
В кошику
од. на суму грн.
| 1N4937-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
Quantity in set/package: 5500pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; 13 inch reel; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
Quantity in set/package: 5500pcs.
на замовлення 2875 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.87 грн |
| 63+ | 6.59 грн |
| 69+ | 6.00 грн |
| 100+ | 5.08 грн |
| 500+ | 4.04 грн |
| 1000+ | 3.59 грн |
| 2000+ | 3.16 грн |
| 2500+ | 3.01 грн |
| 1N4937-E3/73 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; Ammo Pack; Ifsm: 30A; DO41; 200ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 12pF
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.2V
Reverse recovery time: 200ns
Leakage current: 0.1mA
Features of semiconductor devices: fast switching
на замовлення 2593 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 42+ | 10.65 грн |
| 63+ | 6.59 грн |
| 100+ | 5.22 грн |
| 500+ | 4.37 грн |
| 1000+ | 4.04 грн |
| 1N5817-E3/54 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: 13 inch reel
на замовлення 3045 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.74 грн |
| 29+ | 14.33 грн |
| 32+ | 13.18 грн |
| 100+ | 9.78 грн |
| 250+ | 8.44 грн |
| 500+ | 7.41 грн |
| 1000+ | 6.38 грн |
| 2000+ | 5.44 грн |
| 1N5817-E3/73 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 20V; 1A; DO41; Ufmax: 0.45V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Max. forward voltage: 0.45V
Max. forward impulse current: 25A
Kind of package: Ammo Pack
на замовлення 7393 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.74 грн |
| 36+ | 11.53 грн |
| 100+ | 9.23 грн |
| 500+ | 7.74 грн |
| 1000+ | 7.00 грн |
| 3000+ | 5.93 грн |
| 6000+ | 5.35 грн |
| 1N5819-E3/54 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: 13 inch reel
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: 13 inch reel
на замовлення 4731 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.74 грн |
| 31+ | 13.51 грн |
| 34+ | 12.36 грн |
| 100+ | 9.14 грн |
| 500+ | 7.00 грн |
| 1000+ | 6.10 грн |
| 2000+ | 5.19 грн |
| 2500+ | 4.94 грн |
| 1N5819-E3/73 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: Ammo Pack
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; Ufmax: 0.6V
Case: DO41
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: THT
Max. forward voltage: 0.6V
Load current: 1A
Max. forward impulse current: 25A
Max. off-state voltage: 40V
Kind of package: Ammo Pack
на замовлення 1499 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 18.63 грн |
| 33+ | 12.77 грн |
| 100+ | 8.82 грн |
| 500+ | 7.00 грн |
| 1000+ | 6.34 грн |
| BAV99-E3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
на замовлення 1466 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.87 грн |
| 66+ | 6.26 грн |
| 76+ | 5.48 грн |
| 106+ | 3.91 грн |
| 500+ | 2.71 грн |
| 1000+ | 2.30 грн |
| BAV99-HE3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Application: automotive industry
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.15A; 6ns; SOT23; Ufmax: 1.25V; Ir: 50uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.15A
Reverse recovery time: 6ns
Semiconductor structure: double series
Capacitance: 1.5pF
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4.5A
Leakage current: 50µA
Power dissipation: 0.3W
Kind of package: 7 inch reel
Application: automotive industry
Features of semiconductor devices: fast switching; small signal
Quantity in set/package: 3000pcs.
на замовлення 10 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 41.19 грн |
| 1N4007GP-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 8pF
Reverse recovery time: 2µs
Quantity in set/package: 5500pcs.
Features of semiconductor devices: glass passivated
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Capacitance: 8pF
Reverse recovery time: 2µs
Quantity in set/package: 5500pcs.
Features of semiconductor devices: glass passivated
на замовлення 7994 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.29 грн |
| 50+ | 16.56 грн |
| 100+ | 14.99 грн |
| 250+ | 12.60 грн |
| 500+ | 10.55 грн |
| 1000+ | 8.40 грн |
| 357B0102MXB251S22 |
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Виробник: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Mechanical durability: 10000000 cycles
Shaft surface: smooth
Potentiometer features: without limiters
Thread length: 8mm
Shaft length: 14mm
L shaft length: 22mm
Linearity tolerance: ±2%
Manufacturer series: 357
Fastening thread: 3/8"x32UNEF
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Mechanical durability: 10000000 cycles
Shaft surface: smooth
Potentiometer features: without limiters
Thread length: 8mm
Shaft length: 14mm
L shaft length: 22mm
Linearity tolerance: ±2%
Manufacturer series: 357
Fastening thread: 3/8"x32UNEF
на замовлення 56 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2695.34 грн |
| 3+ | 2182.34 грн |
| 10+ | 1989.57 грн |
| 25+ | 1887.41 грн |
| 357B2102MAB251S22 |
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Виробник: VISHAY
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Shaft surface: smooth
Shaft length: 14mm
Thread length: 8mm
L shaft length: 22mm
Fastening thread: 3/8"x32UNEF
Electrical rotation angle: 340°
Linearity tolerance: ±2%
Manufacturer series: 357
Mechanical durability: 10000000 cycles
Category: Cond. plastic single turn potentiometers
Description: Potentiometer: shaft; single turn; 1kΩ; ±20%; 1W; linear; 6.35mm
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1kΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Shaft diameter: 6.35mm
Track material: plastic
Shaft surface: smooth
Shaft length: 14mm
Thread length: 8mm
L shaft length: 22mm
Fastening thread: 3/8"x32UNEF
Electrical rotation angle: 340°
Linearity tolerance: ±2%
Manufacturer series: 357
Mechanical durability: 10000000 cycles
на замовлення 91 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2556.05 грн |
| 3+ | 2094.19 грн |
| 10+ | 2053.83 грн |
| VJ1206A100KXAAC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Mounting: SMD
Capacitance: 10pF
Tolerance: ±10%
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 50V; C0G (NP0); ±10%; SMD; 1206
Operating temperature: -55...125°C
Dielectric: C0G (NP0)
Type of capacitor: ceramic
Mounting: SMD
Capacitance: 10pF
Tolerance: ±10%
Operating voltage: 50V
Case - inch: 1206
Case - mm: 3216
на замовлення 2440 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 10.03 грн |
| 100+ | 7.41 грн |
| 1000+ | 5.77 грн |
| CRCW1206100KFKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 100kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 100kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 100kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 107199 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 652+ | 0.68 грн |
| 746+ | 0.55 грн |
| 1000+ | 0.49 грн |
| 3000+ | 0.33 грн |
| 5000+ | 0.26 грн |
| 10000+ | 0.24 грн |
| BAS85-GS08 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Quantity in set/package: 2500pcs.
Max. load current: 0.3A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 200mW
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.24V
Max. forward impulse current: 0.6A
Kind of package: 7 inch reel
Power dissipation: 0.2W
Quantity in set/package: 2500pcs.
Max. load current: 0.3A
на замовлення 45747 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.20 грн |
| 38+ | 10.96 грн |
| 100+ | 6.51 грн |
| 500+ | 3.87 грн |
| 1000+ | 3.24 грн |
| 2500+ | 2.97 грн |
| 5000+ | 2.81 грн |
| 7500+ | 2.75 грн |
| 12500+ | 2.68 грн |
| BAS85-GS18 |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 13 inch reel
Power dissipation: 0.2W
Quantity in set/package: 10000pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF,SOD80; SMD; 30V; 0.2A; 5ns
Type of diode: Schottky switching
Case: MiniMELF; SOD80
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Features of semiconductor devices: small signal
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Reverse recovery time: 5ns
Kind of package: 13 inch reel
Power dissipation: 0.2W
Quantity in set/package: 10000pcs.
на замовлення 6676 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.87 грн |
| 77+ | 5.35 грн |
| 100+ | 4.21 грн |
| 500+ | 3.41 грн |
| 1000+ | 3.10 грн |
| 2500+ | 2.95 грн |
| 5000+ | 2.69 грн |
| NTCLE100E3472JB0 |
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Виробник: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Resistance: 4.7kΩ
Power: 0.5W
Mounting: THT
Operating temperature: -40...125°C
Material constant B: 3977K
Type of sensor: NTC thermistor
Category: THT measurement NTC thermistors
Description: NTC thermistor; 4.7kΩ; THT; 3977K; -40÷125°C; 500mW
Resistance: 4.7kΩ
Power: 0.5W
Mounting: THT
Operating temperature: -40...125°C
Material constant B: 3977K
Type of sensor: NTC thermistor
на замовлення 7169 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 29.28 грн |
| 18+ | 23.89 грн |
| 19+ | 22.00 грн |
| 25+ | 19.44 грн |
| 50+ | 17.71 грн |
| 100+ | 16.31 грн |
| 200+ | 15.32 грн |
| 1.5KE47CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 47.05V; 23.1A; bidirectional; DO201; 1.5kW; 1.5KE
Type of diode: TVS
Max. off-state voltage: 40.2V
Breakdown voltage: 47.05V
Max. forward impulse current: 23.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 729 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.17 грн |
| 17+ | 24.30 грн |
| 50+ | 22.57 грн |
| 100+ | 21.75 грн |
| 500+ | 20.51 грн |
| SIHA25N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHB25N50E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHG25N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHP25N50E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 16A; Idm: 50A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 16A
Pulsed drain current: 50A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| MBR10100-E3/4W |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.65V
Max. forward impulse current: 150A
Kind of package: tube
Quantity in set/package: 50pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10A; TO220AC; Ufmax: 0.65V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.65V
Max. forward impulse current: 150A
Kind of package: tube
Quantity in set/package: 50pcs.
на замовлення 658 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 44.36 грн |
| 11+ | 39.38 грн |
| BZX85C12-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO41
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 12V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 12V
Mounting: THT
Tolerance: ±5%
Kind of package: Ammo Pack
Case: DO41
Semiconductor structure: single diode
на замовлення 12121 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 46+ | 9.76 грн |
| 70+ | 5.93 грн |
| 105+ | 3.95 грн |
| 5000+ | 3.03 грн |
| BZX85C5V1-TAP |
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Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 5.1V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 5.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Kind of package: Ammo Pack
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| IRF540PBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
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| IRF540SPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 20A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 110A
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| TLLR4400 |
![]() |
Виробник: VISHAY
Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
LED colour: red
LED diameter: 3mm
Luminosity: 0.63...1.2mcd
Viewing angle: 50°
Wavelength: 612...625nm
LED lens: diffused; red
LED current: 2mA
Mounting: THT
Front: convex
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Terminal pitch: 2.54mm
Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 50°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
LED colour: red
LED diameter: 3mm
Luminosity: 0.63...1.2mcd
Viewing angle: 50°
Wavelength: 612...625nm
LED lens: diffused; red
LED current: 2mA
Mounting: THT
Front: convex
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Terminal pitch: 2.54mm
на замовлення 1172 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.50 грн |
| 23+ | 18.62 грн |
| 28+ | 15.08 грн |
| 50+ | 12.85 грн |
| 100+ | 11.20 грн |
| 250+ | 9.72 грн |
| 300+ | 9.56 грн |
| 500+ | 9.06 грн |
| 1000+ | 8.65 грн |
| TLLR4400-AS12Z |
![]() |
Виробник: VISHAY
Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
LED colour: red
LED diameter: 3mm
Luminosity: 0.63...1.2mcd
Viewing angle: 25°
Wavelength: 612...625nm
LED lens: diffused; red
LED current: 2mA
Mounting: THT
Front: convex
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Terminal pitch: 2.54mm
Category: THT LEDs Round
Description: LED; red; 3mm; 0.63÷1.2mcd; 25°; Front: convex; 1.9÷2.4VDC
Type of diode: LED
LED colour: red
LED diameter: 3mm
Luminosity: 0.63...1.2mcd
Viewing angle: 25°
Wavelength: 612...625nm
LED lens: diffused; red
LED current: 2mA
Mounting: THT
Front: convex
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Terminal pitch: 2.54mm
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| TLLR4401 |
![]() |
Виробник: VISHAY
Category: THT LEDs Round
Description: LED; red; 3mm; 1÷2mcd; 50°; Front: convex; 1.9÷2.4VDC; No.of term: 2
Type of diode: LED
LED colour: red
LED diameter: 3mm
Luminosity: 1...2mcd
Viewing angle: 50°
Wavelength: 612...625nm
LED lens: diffused; red
LED current: 2mA
Mounting: THT
Front: convex
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Terminal pitch: 2.54mm
Category: THT LEDs Round
Description: LED; red; 3mm; 1÷2mcd; 50°; Front: convex; 1.9÷2.4VDC; No.of term: 2
Type of diode: LED
LED colour: red
LED diameter: 3mm
Luminosity: 1...2mcd
Viewing angle: 50°
Wavelength: 612...625nm
LED lens: diffused; red
LED current: 2mA
Mounting: THT
Front: convex
Operating voltage: 1.9...2.4V DC
Number of terminals: 2
Terminal pitch: 2.54mm
на замовлення 4874 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 24.84 грн |
| 23+ | 18.04 грн |
| 27+ | 15.32 грн |
| 50+ | 13.68 грн |
| 100+ | 12.19 грн |
| 250+ | 10.79 грн |
| 500+ | 9.97 грн |
| 650+ | 9.72 грн |
| 1000+ | 9.47 грн |
| BZX55C8V2-TAP |
![]() |
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 8.2V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 10869 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 84+ | 5.32 грн |
| 136+ | 3.05 грн |
| 179+ | 2.31 грн |
| 250+ | 1.96 грн |
| 500+ | 1.71 грн |
| 1000+ | 1.57 грн |
| VJ1206G107MXYTW1BC |
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Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100uF; 6.3V; X5R; ±20%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 100µF
Operating voltage: 6.3V
Dielectric: X5R
Tolerance: ±20%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...85°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100uF; 6.3V; X5R; ±20%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 100µF
Operating voltage: 6.3V
Dielectric: X5R
Tolerance: ±20%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...85°C
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| CRCW1206390KFKTABC |
![]() |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 390kΩ; 0.25W; ±1%; 200V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.25W
Tolerance: ±1%
Resistance: 390kΩ
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 390kΩ; 0.25W; ±1%; 200V; -55÷155°C
Mounting: SMD
Type of resistor: thick film
Operating temperature: -55...155°C
Power: 0.25W
Tolerance: ±1%
Resistance: 390kΩ
Operating voltage: 200V
Case - inch: 1206
Case - mm: 3216
на замовлення 198 шт:
термін постачання 14-30 дні (днів)В кошику од. на суму грн.
| B340A-E3/61T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; 7 inch reel
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMA
Max. forward voltage: 0.55V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 65A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 40V; 3A; 7 inch reel
Type of diode: Schottky rectifying
Mounting: SMD
Case: SMA
Max. forward voltage: 0.55V
Load current: 3A
Max. off-state voltage: 40V
Max. forward impulse current: 65A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Semiconductor structure: single diode
на замовлення 7388 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 30.17 грн |
| 20+ | 21.09 грн |
| 100+ | 14.25 грн |
| 200+ | 12.44 грн |
| 500+ | 10.30 грн |
| 1000+ | 8.65 грн |
| 1800+ | 7.83 грн |
| SS12-E3/61T |
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Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 20V; 1A; 7 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
на замовлення 1979 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.10 грн |
| 100+ | 5.24 грн |
| 250+ | 4.42 грн |
| 500+ | 3.91 грн |
| SMBJ24A-E3/52 | ![]() |
![]() |
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 5199 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 21.29 грн |
| 27+ | 15.82 грн |
| 30+ | 13.76 грн |
| 50+ | 9.14 грн |
| 100+ | 7.58 грн |
| 250+ | 5.85 грн |
| 500+ | 5.60 грн |
| SMBJ24A-E3/5B |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 13 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 26.7÷29.5V; 15.4A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 24V
Breakdown voltage: 26.7...29.5V
Max. forward impulse current: 15.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 13 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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| US1M-E3/5AT |
![]() |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 13 inch reel
Leakage current: 50µA
Quantity in set/package: 7500pcs.
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 13 inch reel
Leakage current: 50µA
Quantity in set/package: 7500pcs.
на замовлення 2152 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 17.74 грн |
| 30+ | 13.76 грн |
| 100+ | 9.52 грн |
| 500+ | 6.79 грн |
| 1000+ | 5.88 грн |
| 2000+ | 5.31 грн |
| US1M-E3/61T | ![]() |
![]() |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Capacitance: 10pF
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Quantity in set/package: 1800pcs.
на замовлення 10261 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 14.20 грн |
| 50+ | 11.14 грн |
| 100+ | 10.01 грн |
| 500+ | 7.28 грн |
| 1000+ | 6.19 грн |
| 1800+ | 5.30 грн |
| 3600+ | 4.48 грн |
| US1MHE3_A/H |
![]() |
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Leakage current: 50µA
Application: automotive industry
Quantity in set/package: 1800pcs.
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 1kV; 1A; 75ns; DO214AC,SMA; Ufmax: 1.7V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 1kV
Load current: 1A
Reverse recovery time: 75ns
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Case: DO214AC; SMA
Max. forward voltage: 1.7V
Max. forward impulse current: 30A
Kind of package: 7 inch reel
Leakage current: 50µA
Application: automotive industry
Quantity in set/package: 1800pcs.
на замовлення 739 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.08 грн |
| 32+ | 12.93 грн |
| IRFZ44PBF | ![]() |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 67nC
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
| MBR1645-E3/45 |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.57V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 16A; TO220AC; Ufmax: 0.57V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 16A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 0.57V
Kind of package: tube
Quantity in set/package: 50pcs.
Max. forward impulse current: 150A
на замовлення 2400 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 60.33 грн |
| 50+ | 28.67 грн |
| UF5408-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 75ns
Quantity in set/package: 1400pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 3A; 13 inch reel; Ifsm: 150A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 3A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 150A
Case: DO201AD
Max. forward voltage: 1V
Reverse recovery time: 75ns
Quantity in set/package: 1400pcs.
на замовлення 3309 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.05 грн |
| 19+ | 21.75 грн |
| 100+ | 17.96 грн |
| 500+ | 16.72 грн |
| BZX55C15-TAP |
![]() |
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 7407 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.98 грн |
| 76+ | 5.44 грн |
| 95+ | 4.37 грн |
| 128+ | 3.23 грн |
| 169+ | 2.45 грн |
| 250+ | 2.35 грн |
| BZX55C15-TR |
![]() |
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; 14 inch reel; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: 14 inch reel
Case: DO35
Mounting: THT
Tolerance: ±6%
Semiconductor structure: single diode
Quantity in set/package: 10000pcs.
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 15V; 14 inch reel; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 15V
Kind of package: 14 inch reel
Case: DO35
Mounting: THT
Tolerance: ±6%
Semiconductor structure: single diode
Quantity in set/package: 10000pcs.
на замовлення 1097 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.10 грн |
| 76+ | 5.44 грн |
| 100+ | 4.12 грн |
| 167+ | 2.47 грн |
| 250+ | 1.87 грн |
| 500+ | 1.61 грн |
| DG390BDJ-E3 |
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Виробник: VISHAY
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 2; DIP16; -15÷15V; tube
Type of integrated circuit: analog switch
Output configuration: SPDT
Number of channels: 2
Case: DIP16
Supply voltage: -15...15V
Mounting: THT
Kind of package: tube
Category: Analog multiplexers and switches
Description: IC: analog switch; SPDT; Ch: 2; DIP16; -15÷15V; tube
Type of integrated circuit: analog switch
Output configuration: SPDT
Number of channels: 2
Case: DIP16
Supply voltage: -15...15V
Mounting: THT
Kind of package: tube
на замовлення 71 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 411.67 грн |
| 5+ | 337.77 грн |
| 25+ | 304.00 грн |
| 1N4148W-E3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Kind of package: 7 inch reel
Max. forward impulse current: 0.5A
Case: SOD123
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Quantity in set/package: 3000pcs.
Capacitance: 1.5pF
Leakage current: 0.1mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.25A; 4ns; SOD123; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.25A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Kind of package: 7 inch reel
Max. forward impulse current: 0.5A
Case: SOD123
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Quantity in set/package: 3000pcs.
Capacitance: 1.5pF
Leakage current: 0.1mA
на замовлення 9739 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.10 грн |
| 91+ | 4.53 грн |
| 120+ | 3.46 грн |
| 131+ | 3.15 грн |
| 250+ | 2.27 грн |
| 500+ | 1.91 грн |
| 1000+ | 1.72 грн |
| 3000+ | 1.47 грн |
| 1N4148WS-E3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Kind of package: 7 inch reel
Max. forward impulse current: 0.35A
Case: SOD323
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Quantity in set/package: 3000pcs.
Capacitance: 4pF
Leakage current: 0.1mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Kind of package: 7 inch reel
Max. forward impulse current: 0.35A
Case: SOD323
Max. forward voltage: 1.2V
Reverse recovery time: 4ns
Quantity in set/package: 3000pcs.
Capacitance: 4pF
Leakage current: 0.1mA
на замовлення 5984 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 8.87 грн |
| 71+ | 5.85 грн |
| 111+ | 3.74 грн |
| 139+ | 2.97 грн |
| 500+ | 1.80 грн |
| 1000+ | 1.71 грн |
| 3000+ | 1.60 грн |
| 1N4148WS-G3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: SOD323
Max. forward voltage: 1.2V
Max. forward impulse current: 0.35A
Leakage current: 0.1mA
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: SOD323
Max. forward voltage: 1.2V
Max. forward impulse current: 0.35A
Leakage current: 0.1mA
Kind of package: 7 inch reel
Quantity in set/package: 3000pcs.
на замовлення 3796 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.42 грн |
| 70+ | 5.93 грн |
| 152+ | 2.73 грн |
| 500+ | 2.45 грн |
| 1000+ | 2.35 грн |
| 3000+ | 1.98 грн |
| 1N4148WS-HE3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: SOD323
Max. forward voltage: 1.2V
Max. forward impulse current: 0.35A
Leakage current: 0.1mA
Kind of package: 7 inch reel
Application: automotive industry
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 0.15A; 4ns; SOD323; Ufmax: 1.2V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; small signal
Capacitance: 4pF
Case: SOD323
Max. forward voltage: 1.2V
Max. forward impulse current: 0.35A
Leakage current: 0.1mA
Kind of package: 7 inch reel
Application: automotive industry
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| TEMT7000X01 |
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Виробник: VISHAY
Category: Phototransistors
Description: Phototransistor; 0805; SMD; λp max: 850nm; 20V; 60°; λd: 470÷1090nm
Mounting: SMD
Case - mm: 2012
Wavelength: 470...1090nm
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 20V
Viewing angle: 60°
Case - inch: 0805
LED lens: transparent
Category: Phototransistors
Description: Phototransistor; 0805; SMD; λp max: 850nm; 20V; 60°; λd: 470÷1090nm
Mounting: SMD
Case - mm: 2012
Wavelength: 470...1090nm
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 850nm
Collector-emitter voltage: 20V
Viewing angle: 60°
Case - inch: 0805
LED lens: transparent
на замовлення 1426 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 47.91 грн |
| 13+ | 33.61 грн |
| 50+ | 27.43 грн |
| 100+ | 25.21 грн |
| 500+ | 21.17 грн |
| 1000+ | 19.69 грн |
| UF4007-E3/54 |
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Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Leakage current: 50µA
Capacitance: 17pF
Quantity in set/package: 5500pcs.
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; 13 inch reel; Ifsm: 30A; DO41; 75ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated; ultrafast switching
Kind of package: 13 inch reel
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.7V
Reverse recovery time: 75ns
Leakage current: 50µA
Capacitance: 17pF
Quantity in set/package: 5500pcs.
на замовлення 10193 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 27.50 грн |
| 22+ | 19.11 грн |
| 50+ | 15.24 грн |
| 100+ | 13.68 грн |
| 500+ | 9.89 грн |
| 1000+ | 8.16 грн |
| 2000+ | 6.59 грн |
| 2500+ | 6.10 грн |
| 5500+ | 5.27 грн |
| IRFP064PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 70A; 300W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 70A
Power dissipation: 300W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 0.19µC
Kind of package: tube
Kind of channel: enhancement
на замовлення 227 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 249.62 грн |
| 10+ | 215.85 грн |
| 25+ | 204.31 грн |
| 100+ | 184.54 грн |
| 200+ | 173.01 грн |
| 293D107X0010D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 100uF; 10VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 100µF
Operating voltage: 10V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 100uF; 10VDC; SMD; D; 2917; ±20%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 100µF
Operating voltage: 10V DC
Mounting: SMD
Case: D
Case - inch: 2917
Case - mm: 7343
Tolerance: ±20%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
на замовлення 688 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 39.04 грн |
| 19+ | 22.08 грн |
| 50+ | 17.47 грн |
| 100+ | 16.06 грн |
| 293D107X9010C2TE3 | ![]() |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 100uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 100µF
Operating voltage: 10V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 100uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 100µF
Operating voltage: 10V DC
Mounting: SMD
Case: C
Case - inch: 2312
Case - mm: 6032
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
на замовлення 11360 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.18 грн |
| 28+ | 14.91 грн |
| 50+ | 12.85 грн |
| 100+ | 12.03 грн |
| 200+ | 11.20 грн |
| 500+ | 10.79 грн |


































