| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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BZX85C10-TAP | VISHAY |
 Category: THT Zener diodesDescription: Diode: Zener; 1.3W; 10V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 10V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 2727 шт: термін постачання 14-30 дні (днів) |
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BZX85C24-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 1.3W; 24V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 24V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 2855 шт: термін постачання 14-30 дні (днів) |
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CRCW251210K0FKEG | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 10kΩ; 1W; ±1%; CRCW2512; 500V Power: 1W Resistance: 10kΩ Tolerance: ±1% Mounting: SMD Operating temperature: -55...155°C Operating voltage: 500V Temperature coefficient: 100ppm/°C Manufacturer series: CRCW2512 Case - inch: 2512 Case - mm: 6332 Type of resistor: thick film |
на замовлення 1080 шт: термін постачання 14-30 дні (днів) |
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CRCW251210K0FKTHBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 10kΩ; 1W; ±1%; 500V; -55÷155°C Power: 1W Resistance: 10kΩ Tolerance: ±1% Mounting: SMD Operating temperature: -55...155°C Operating voltage: 500V Temperature coefficient: 100ppm/°C Case - inch: 2512 Case - mm: 6332 Type of resistor: thick film |
на замовлення 3990 шт: термін постачання 14-30 дні (днів) |
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RCA121010K0FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 1210; 10kΩ; 500mW; ±1%; 200V; -55÷155°C Power: 0.5W Resistance: 10kΩ Tolerance: ±1% Operating temperature: -55...155°C Operating voltage: 200V Temperature coefficient: 100ppm/°C Case - inch: 1210 Case - mm: 3225 Conform to the norm: AEC-Q200 Type of resistor: thick film |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CRCW121010K0FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1210; 10kΩ; 500mW; ±1%; 200V; -55÷155°C Power: 0.5W Resistance: 10kΩ Tolerance: ±1% Mounting: SMD Operating temperature: -55...155°C Body dimensions: 3.2x2.5x0.55mm Roll diameter max.: 180mm Operating voltage: 200V Temperature coefficient: 100ppm/°C Quantity in set/package: 5000pcs. Case - inch: 1210 Case - mm: 3225 Conform to the norm: AEC-Q200 Type of resistor: thick film |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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TSOP58336 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 36kHz; 45°; 2.5÷5.5V Type of photoelement: integrated IR receiver Frequency: 36kHz Mounting: THT Viewing angle: 45° Supply voltage: 2.5...5.5V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| MMSZ5252B-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 24V; SMD; 7 inch reel; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 24V Mounting: SMD Tolerance: ±5% Kind of package: 7 inch reel Case: SOD123 Semiconductor structure: single diode Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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RCA06032K61FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 2.61kΩ; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 2.61kΩ Power: 0.1W Tolerance: ±1% Operating voltage: 75V Temperature coefficient: 100ppm/°C Operating temperature: -55...155°C Conform to the norm: AEC-Q200 |
на замовлення 4190 шт: термін постачання 14-30 дні (днів) |
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RCA06032K94FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 2.94kΩ; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 2.94kΩ Power: 0.1W Tolerance: ±1% Operating voltage: 75V Temperature coefficient: 100ppm/°C Operating temperature: -55...155°C Conform to the norm: AEC-Q200 |
на замовлення 3670 шт: термін постачання 14-30 дні (днів) |
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RCA06032K21FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 2.21kΩ; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 2.21kΩ Power: 0.1W Tolerance: ±1% Operating voltage: 75V Temperature coefficient: 100ppm/°C Operating temperature: -55...155°C Conform to the norm: AEC-Q200 |
на замовлення 4900 шт: термін постачання 14-30 дні (днів) |
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RCA06032K15FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 2.15kΩ; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 2.15kΩ Power: 0.1W Tolerance: ±1% Operating voltage: 75V Temperature coefficient: 100ppm/°C Operating temperature: -55...155°C Conform to the norm: AEC-Q200 |
на замовлення 4980 шт: термін постачання 14-30 дні (днів) |
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RCA060312K0FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 12kΩ; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 12kΩ Power: 0.1W Tolerance: ±1% Operating voltage: 75V Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Operating temperature: -55...155°C |
на замовлення 3710 шт: термін постачання 14-30 дні (днів) |
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RCA0603332KFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 332kΩ; 100mW; ±1%; 75V; -55÷155°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 332kΩ Power: 0.1W Tolerance: ±1% Operating voltage: 75V Temperature coefficient: 100ppm/°C Operating temperature: -55...155°C Conform to the norm: AEC-Q200 |
на замовлення 4260 шт: термін постачання 14-30 дні (днів) |
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SIHB22N60E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 56A Power dissipation: 227W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 86nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 250 шт: термін постачання 14-30 дні (днів) |
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MAL215099908E3 | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 150uF; 100VDC; 12.5x12.5x16mm; ±20% Mounting: SMD Operating temperature: -55...105°C Capacitance: 150µF Body dimensions: 12.5x12.5x16mm Tolerance: ±20% Operating voltage: 100V DC Type of capacitor: electrolytic |
на замовлення 174 шт: термін постачання 14-30 дні (днів) |
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VJ0805Y102JXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 1nF; 100V; X7R; ±5%; SMD; 0805 Mounting: SMD Tolerance: ±5% Dielectric: X7R Operating temperature: -55...125°C Capacitance: 1nF Operating voltage: 100V Case - inch: 0805 Case - mm: 2012 Type of capacitor: ceramic |
на замовлення 1790 шт: термін постачання 14-30 дні (днів) |
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VJ0805Y102KXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 1nF; 100V; X7R; ±10%; SMD; 0805 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 1nF Operating voltage: 100V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
на замовлення 1006 шт: термін постачання 14-30 дні (днів) |
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MAL213666471E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; low ESR; THT; 470uF; 25VDC; Ø10x20mm; ±20% Type of capacitor: electrolytic Mounting: THT Capacitance: 470µF Operating voltage: 25V DC Body dimensions: Ø10x20mm Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C Height: 20mm Diameter: 10mm Impedance: 62mΩ Kind of capacitor: low ESR Terminal pitch: 5mm Lead length: 5mm |
на замовлення 318 шт: термін постачання 14-30 дні (днів) |
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DF08S-E3/77 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 50A Case: DFS Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Electrical mounting: SMT |
на замовлення 1658 шт: термін постачання 14-30 дні (днів) |
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DF08SA-E3/77 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 30A Case: DFS Kind of package: reel; tape Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Electrical mounting: SMT |
на замовлення 1500 шт: термін постачання 14-30 дні (днів) |
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DF08S-E3/45 | VISHAY |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS Type of bridge rectifier: single-phase Max. off-state voltage: 0.8kV Load current: 1A Max. forward impulse current: 50A Case: DFS Kind of package: tube Max. forward voltage: 1.1V Features of semiconductor devices: glass passivated Electrical mounting: SMT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
| SISS73DN-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; ThunderFET; unipolar; -150V; -12.9A; 42.1W Type of transistor: P-MOSFET Technology: ThunderFET; TrenchFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -12.9A Pulsed drain current: -30A Power dissipation: 42.1W Case: PowerPAK® 1212-8 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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1.5KE91A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 91V; 12A; unidirectional; DO201; 13 inch reel Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 77.8V Breakdown voltage: 91V Max. forward impulse current: 12A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Technology: TransZorb® Kind of package: 13 inch reel Features of semiconductor devices: glass passivated |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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1.5KE130A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodes Description: Diode: TVS; 1.5kW; 130.5V; 8.4A; unidirectional; DO201; TransZorb® Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 111V Breakdown voltage: 130.5V Max. forward impulse current: 8.4A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Manufacturer series: 1.5KE Technology: TransZorb® Kind of package: 13 inch reel Features of semiconductor devices: glass passivated |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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SI4532CDY-T1-GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4.9/-3.4A Type of transistor: N/P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30/-30V Drain current: 4.9/-3.4A Power dissipation: 1.78W Case: SO8 Gate-source voltage: ±20V On-state resistance: 47/89mΩ Mounting: SMD Gate charge: 9/12nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2220 шт: термін постачання 14-30 дні (днів) |
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SMBJ14A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 15.6÷17.2V; 25.9A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 15.6...17.2V Max. forward impulse current: 25.9A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 686 шт: термін постачання 14-30 дні (днів) |
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SMBJ14D-M3/H | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 15.8÷17V; 26.2A; unidirectional; ±3.5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 15.8...17V Max. forward impulse current: 26.2A Semiconductor structure: unidirectional Tolerance: ±3.5% Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: 7 inch reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 707 шт: термін постачання 14-30 дні (днів) |
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| TR3A106K010C0900 | VISHAY |
Category: SMD tantalum capacitors Description: Capacitor: tantalum; 10uF; 10VDC; SMD; A; 1206; ±10%; -55÷125°C; TR3 Type of capacitor: tantalum Capacitance: 10µF Operating voltage: 10V DC Mounting: SMD Case: A Case - inch: 1206 Case - mm: 3216 Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: TR3 ESR value: 900mΩ |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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TSOP94356 | VISHAY |
Category: IR receiver modules Description: Integrated IR receiver; 56kHz; 45°; 2÷3.6V Mounting: THT Type of photoelement: integrated IR receiver Supply voltage: 2...3.6V Viewing angle: 45° Frequency: 56kHz |
на замовлення 750 шт: термін постачання 14-30 дні (днів) |
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| SI9435BDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.7A Pulsed drain current: -30A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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SMCJ12A-E3/57T | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; unidirectional; ±5%; SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 75.4A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 5µA Manufacturer series: SMCJ Tolerance: ±5% Kind of package: 7 inch reel; tape Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 759 шт: термін постачання 14-30 дні (днів) |
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MMSZ5231B-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 5.1V; SMD; 7 inch reel; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 5.1V Mounting: SMD Tolerance: ±5% Kind of package: 7 inch reel Case: SOD123 Semiconductor structure: single diode Quantity in set/package: 3000pcs. |
на замовлення 1510 шт: термін постачання 14-30 дні (днів) |
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MAL203034479E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 47uF; 10VDC; Ø4.5x10mm; ±20%; 3000h Leads: axial Type of capacitor: electrolytic Mounting: THT Operating temperature: -40...85°C Capacitance: 47µF Diameter: 4.5mm Body dimensions: Ø4.5x10mm Height: 10mm Operating voltage: 10V DC Tolerance: ±20% Service life: 3000h |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CRCW12063K00FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 3kΩ; 0.25W; ±1%; 200V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 3kΩ Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 500 шт: термін постачання 14-30 дні (днів) |
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RCA12063K09FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 1206; 3.09kΩ; 250mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 3.09kΩ Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
на замовлення 4800 шт: термін постачання 14-30 дні (днів) |
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RCA1206243KFKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 1206; 243kΩ; 250mW; ±1%; 200V; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 243kΩ Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
на замовлення 3940 шт: термін постачання 14-30 дні (днів) |
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CRCW12063K90FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 3.9kΩ; 0.25W; ±1%; 200V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 3.9kΩ Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 9200 шт: термін постачання 14-30 дні (днів) |
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CRCW12063K01FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 3.01kΩ; 0.25W; ±1%; 200V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 3.01kΩ Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 3705 шт: термін постачання 14-30 дні (днів) |
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CRCW12063K92FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 3.92kΩ; 0.25W; ±1%; 200V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 3.92kΩ Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 5000 шт: термін постачання 14-30 дні (днів) |
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CRCW12063K83FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 3.83kΩ; 0.25W; ±1%; 200V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 3.83kΩ Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 1200 шт: термін постачання 14-30 дні (днів) |
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CRCW12063K90JNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 3.9kΩ; 0.25W; ±5%; 200V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 3.9kΩ Power: 0.25W Tolerance: ±5% Operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 3400 шт: термін постачання 14-30 дні (днів) |
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CRCW12063K09FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 3.09kΩ; 0.25W; ±1%; 200V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 3.09kΩ Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 2600 шт: термін постачання 14-30 дні (днів) |
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SMBJ12A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 13.3÷14.7V; 30.2A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 30.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: 7 inch reel; tape Technology: TransZorb® Features of semiconductor devices: glass passivated |
на замовлення 2136 шт: термін постачання 14-30 дні (днів) |
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| SMBJ12A-E3/5B | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 600W; 13.3÷14.7V; 30.2A; unidirectional; ±5%; SMB; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 12V Breakdown voltage: 13.3...14.7V Max. forward impulse current: 30.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Manufacturer series: SMBJ Tolerance: ±5% Kind of package: 13 inch reel; tape Technology: TransZorb® Features of semiconductor devices: glass passivated |
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В кошику од. на суму грн. | |||||||||||||||||||
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|
SMCJ28A-E3/57T | VISHAY |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; ±5%; SMC; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 33A Semiconductor structure: unidirectional Case: SMC Mounting: SMD Leakage current: 1µA Manufacturer series: SMCJ Tolerance: ±5% Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 7 inch reel; tape |
на замовлення 976 шт: термін постачання 14-30 дні (днів) |
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| SIHD5N50D-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 104W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.4A Pulsed drain current: 10A Power dissipation: 104W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHF5N50D-E3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 28.8W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.4A Pulsed drain current: 10A Power dissipation: 28.8W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP5N50D-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 104W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.4A Pulsed drain current: 10A Power dissipation: 104W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
| SIHU5N50D-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 104W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 3.4A Pulsed drain current: 10A Power dissipation: 104W Case: IPAK; TO251 Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
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В кошику од. на суму грн. | |||||||||||||||||||
| VSSAF5N50-M3/6A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 5A Mounting: SMD Max. forward voltage: 0.41V Load current: 5A Max. off-state voltage: 50V Max. forward impulse current: 100A Leakage current: 1.4mA Type of diode: Schottky rectifying Semiconductor structure: single diode |
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В кошику од. на суму грн. | |||||||||||||||||||
| MAL215262109E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic Type of capacitor: electrolytic |
на замовлення 1000 шт: термін постачання 14-30 дні (днів) |
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MAL215252101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 200VDC; Ø16x20mm; Pitch: 7.5mm Manufacturer series: MAL2152 Operating temperature: -40...105°C Mounting: THT Type of capacitor: electrolytic Capacitance: 100µF Terminal pitch: 7.5mm Height: 20mm Diameter: 16mm Body dimensions: Ø16x20mm Operating voltage: 200V DC Tolerance: ±20% Service life: 3000h |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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|
MAL215253339E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 33uF; 250VDC; Ø12.5x20mm; Pitch: 5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 33µF Operating voltage: 250V DC Body dimensions: Ø12.5x20mm Terminal pitch: 5mm Tolerance: ±20% Service life: 3000h Operating temperature: -40...105°C Height: 20mm Diameter: 12.5mm |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
 |
SI3443BDV-T1-E3 | VISHAY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.6A Pulsed drain current: -20A Power dissipation: 1.1W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 86 шт: термін постачання 14-30 дні (днів) |
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| SI3443DDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -20A Power dissipation: 2.7W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SI3443CDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.6A Pulsed drain current: -20A Power dissipation: 3.2W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SI3443BDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.6A Pulsed drain current: -20A Power dissipation: 1.1W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 9nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SI3443CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.6A Pulsed drain current: -20A Power dissipation: 3.2W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12.4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SI3443DDV-T1-BE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -4A Pulsed drain current: -20A Power dissipation: 2.7W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| BZX85C10-TAP |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 10V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 10V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 2727 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 7.23 грн |
| 76+ | 5.54 грн |
| 91+ | 4.62 грн |
| 131+ | 3.22 грн |
| 133+ | 3.17 грн |
| BZX85C24-TAP |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 24V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 24V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 24V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 24V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 2855 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 12.65 грн |
| 50+ | 8.56 грн |
| 60+ | 7.05 грн |
| 97+ | 4.33 грн |
| 115+ | 3.66 грн |
| 500+ | 3.09 грн |
| CRCW251210K0FKEG |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 10kΩ; 1W; ±1%; CRCW2512; 500V
Power: 1W
Resistance: 10kΩ
Tolerance: ±1%
Mounting: SMD
Operating temperature: -55...155°C
Operating voltage: 500V
Temperature coefficient: 100ppm/°C
Manufacturer series: CRCW2512
Case - inch: 2512
Case - mm: 6332
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 10kΩ; 1W; ±1%; CRCW2512; 500V
Power: 1W
Resistance: 10kΩ
Tolerance: ±1%
Mounting: SMD
Operating temperature: -55...155°C
Operating voltage: 500V
Temperature coefficient: 100ppm/°C
Manufacturer series: CRCW2512
Case - inch: 2512
Case - mm: 6332
Type of resistor: thick film
на замовлення 1080 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 10.38 грн |
| 100+ | 5.86 грн |
| 250+ | 4.97 грн |
| 500+ | 4.51 грн |
| 1000+ | 4.36 грн |
| CRCW251210K0FKTHBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 10kΩ; 1W; ±1%; 500V; -55÷155°C
Power: 1W
Resistance: 10kΩ
Tolerance: ±1%
Mounting: SMD
Operating temperature: -55...155°C
Operating voltage: 500V
Temperature coefficient: 100ppm/°C
Case - inch: 2512
Case - mm: 6332
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 10kΩ; 1W; ±1%; 500V; -55÷155°C
Power: 1W
Resistance: 10kΩ
Tolerance: ±1%
Mounting: SMD
Operating temperature: -55...155°C
Operating voltage: 500V
Temperature coefficient: 100ppm/°C
Case - inch: 2512
Case - mm: 6332
Type of resistor: thick film
на замовлення 3990 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 50+ | 10.21 грн |
| 100+ | 5.62 грн |
| 1000+ | 3.49 грн |
| RCA121010K0FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1210; 10kΩ; 500mW; ±1%; 200V; -55÷155°C
Power: 0.5W
Resistance: 10kΩ
Tolerance: ±1%
Operating temperature: -55...155°C
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Case - inch: 1210
Case - mm: 3225
Conform to the norm: AEC-Q200
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; 1210; 10kΩ; 500mW; ±1%; 200V; -55÷155°C
Power: 0.5W
Resistance: 10kΩ
Tolerance: ±1%
Operating temperature: -55...155°C
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Case - inch: 1210
Case - mm: 3225
Conform to the norm: AEC-Q200
Type of resistor: thick film
товару немає в наявності
В кошику
од. на суму грн.
| CRCW121010K0FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1210; 10kΩ; 500mW; ±1%; 200V; -55÷155°C
Power: 0.5W
Resistance: 10kΩ
Tolerance: ±1%
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 3.2x2.5x0.55mm
Roll diameter max.: 180mm
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Quantity in set/package: 5000pcs.
Case - inch: 1210
Case - mm: 3225
Conform to the norm: AEC-Q200
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; SMD; 1210; 10kΩ; 500mW; ±1%; 200V; -55÷155°C
Power: 0.5W
Resistance: 10kΩ
Tolerance: ±1%
Mounting: SMD
Operating temperature: -55...155°C
Body dimensions: 3.2x2.5x0.55mm
Roll diameter max.: 180mm
Operating voltage: 200V
Temperature coefficient: 100ppm/°C
Quantity in set/package: 5000pcs.
Case - inch: 1210
Case - mm: 3225
Conform to the norm: AEC-Q200
Type of resistor: thick film
товару немає в наявності
В кошику
од. на суму грн.
| TSOP58336 |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 45°; 2.5÷5.5V
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
Category: IR receiver modules
Description: Integrated IR receiver; 36kHz; 45°; 2.5÷5.5V
Type of photoelement: integrated IR receiver
Frequency: 36kHz
Mounting: THT
Viewing angle: 45°
Supply voltage: 2.5...5.5V
товару немає в наявності
В кошику
од. на суму грн.
| MMSZ5252B-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Quantity in set/package: 3000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 24V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 24V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| RCA06032K61FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 2.61kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 2.61kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 2.61kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 2.61kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
на замовлення 4190 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 310+ | 1.49 грн |
| 400+ | 1.07 грн |
| 440+ | 0.96 грн |
| 570+ | 0.75 грн |
| 1000+ | 0.68 грн |
| RCA06032K94FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 2.94kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 2.94kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 2.94kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 2.94kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
на замовлення 3670 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 310+ | 1.49 грн |
| 400+ | 1.07 грн |
| 440+ | 0.96 грн |
| 570+ | 0.75 грн |
| 1000+ | 0.68 грн |
| RCA06032K21FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 2.21kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 2.21kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 2.21kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 2.21kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
на замовлення 4900 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 310+ | 1.49 грн |
| 400+ | 1.07 грн |
| 440+ | 0.96 грн |
| 570+ | 0.75 грн |
| 1000+ | 0.68 грн |
| RCA06032K15FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 2.15kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 2.15kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 2.15kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 2.15kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
на замовлення 4980 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 310+ | 1.49 грн |
| 400+ | 1.07 грн |
| 440+ | 0.96 грн |
| 570+ | 0.75 грн |
| 1000+ | 0.68 грн |
| RCA060312K0FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 12kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 12kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 0603; 12kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 12kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Operating temperature: -55...155°C
на замовлення 3710 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 310+ | 1.47 грн |
| 400+ | 1.06 грн |
| 450+ | 0.95 грн |
| 570+ | 0.74 грн |
| 1000+ | 0.67 грн |
| RCA0603332KFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 332kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 332kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 332kΩ; 100mW; ±1%; 75V; -55÷155°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 332kΩ
Power: 0.1W
Tolerance: ±1%
Operating voltage: 75V
Temperature coefficient: 100ppm/°C
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
на замовлення 4260 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 310+ | 1.49 грн |
| 400+ | 1.07 грн |
| 440+ | 0.96 грн |
| 570+ | 0.75 грн |
| 1000+ | 0.68 грн |
| SIHB22N60E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 56A; 227W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 56A
Power dissipation: 227W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 86nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 250 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 328.09 грн |
| 10+ | 224.92 грн |
| 50+ | 162.82 грн |
| MAL215099908E3 |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 150uF; 100VDC; 12.5x12.5x16mm; ±20%
Mounting: SMD
Operating temperature: -55...105°C
Capacitance: 150µF
Body dimensions: 12.5x12.5x16mm
Tolerance: ±20%
Operating voltage: 100V DC
Type of capacitor: electrolytic
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 150uF; 100VDC; 12.5x12.5x16mm; ±20%
Mounting: SMD
Operating temperature: -55...105°C
Capacitance: 150µF
Body dimensions: 12.5x12.5x16mm
Tolerance: ±20%
Operating voltage: 100V DC
Type of capacitor: electrolytic
на замовлення 174 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 197.94 грн |
| 5+ | 143.51 грн |
| 10+ | 125.05 грн |
| 25+ | 104.91 грн |
| 50+ | 93.16 грн |
| 100+ | 84.77 грн |
| VJ0805Y102JXBCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1nF; 100V; X7R; ±5%; SMD; 0805
Mounting: SMD
Tolerance: ±5%
Dielectric: X7R
Operating temperature: -55...125°C
Capacitance: 1nF
Operating voltage: 100V
Case - inch: 0805
Case - mm: 2012
Type of capacitor: ceramic
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1nF; 100V; X7R; ±5%; SMD; 0805
Mounting: SMD
Tolerance: ±5%
Dielectric: X7R
Operating temperature: -55...125°C
Capacitance: 1nF
Operating voltage: 100V
Case - inch: 0805
Case - mm: 2012
Type of capacitor: ceramic
на замовлення 1790 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 90+ | 5.60 грн |
| 210+ | 2.05 грн |
| 500+ | 1.30 грн |
| 1000+ | 1.17 грн |
| VJ0805Y102KXBCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 100V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 1nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 1nF; 100V; X7R; ±10%; SMD; 0805
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 1nF
Operating voltage: 100V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
на замовлення 1006 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.13 грн |
| MAL213666471E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 470uF; 25VDC; Ø10x20mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 25V DC
Body dimensions: Ø10x20mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Height: 20mm
Diameter: 10mm
Impedance: 62mΩ
Kind of capacitor: low ESR
Terminal pitch: 5mm
Lead length: 5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; THT; 470uF; 25VDC; Ø10x20mm; ±20%
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 470µF
Operating voltage: 25V DC
Body dimensions: Ø10x20mm
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Height: 20mm
Diameter: 10mm
Impedance: 62mΩ
Kind of capacitor: low ESR
Terminal pitch: 5mm
Lead length: 5mm
на замовлення 318 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 134.67 грн |
| 10+ | 71.92 грн |
| 40+ | 51.45 грн |
| 50+ | 49.26 грн |
| 100+ | 44.23 грн |
| 125+ | 43.05 грн |
| 200+ | 40.96 грн |
| 250+ | 40.20 грн |
| 300+ | 39.61 грн |
| DF08S-E3/77 |
|
Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
на замовлення 1658 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 40.67 грн |
| 100+ | 27.02 грн |
| 500+ | 18.30 грн |
| 1000+ | 16.62 грн |
| 1500+ | 15.61 грн |
| DF08SA-E3/77 |
|
Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: DFS
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 30A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 30A
Case: DFS
Kind of package: reel; tape
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
на замовлення 1500 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 64.17 грн |
| 13+ | 33.99 грн |
| 100+ | 23.08 грн |
| 500+ | 17.37 грн |
| 1500+ | 14.18 грн |
| DF08S-E3/45 |
|
Виробник: VISHAY
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 1A; Ifsm: 50A; DFS
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 1A
Max. forward impulse current: 50A
Case: DFS
Kind of package: tube
Max. forward voltage: 1.1V
Features of semiconductor devices: glass passivated
Electrical mounting: SMT
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| SISS73DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; ThunderFET; unipolar; -150V; -12.9A; 42.1W
Type of transistor: P-MOSFET
Technology: ThunderFET; TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -12.9A
Pulsed drain current: -30A
Power dissipation: 42.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; ThunderFET; unipolar; -150V; -12.9A; 42.1W
Type of transistor: P-MOSFET
Technology: ThunderFET; TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -12.9A
Pulsed drain current: -30A
Power dissipation: 42.1W
Case: PowerPAK® 1212-8
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| 1.5KE91A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 91V; 12A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 77.8V
Breakdown voltage: 91V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Technology: TransZorb®
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 91V; 12A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 77.8V
Breakdown voltage: 91V
Max. forward impulse current: 12A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Technology: TransZorb®
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
на замовлення 15 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 35.25 грн |
| 15+ | 27.70 грн |
| 1.5KE130A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 130.5V; 8.4A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Technology: TransZorb®
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 130.5V; 8.4A; unidirectional; DO201; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 111V
Breakdown voltage: 130.5V
Max. forward impulse current: 8.4A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Manufacturer series: 1.5KE
Technology: TransZorb®
Kind of package: 13 inch reel
Features of semiconductor devices: glass passivated
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В кошику
од. на суму грн.
| SI4532CDY-T1-GE3 |
|
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4.9/-3.4A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4.9/-3.4A
Power dissipation: 1.78W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 47/89mΩ
Mounting: SMD
Gate charge: 9/12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; TrenchFET®; unipolar; 30/-30V; 4.9/-3.4A
Type of transistor: N/P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 4.9/-3.4A
Power dissipation: 1.78W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 47/89mΩ
Mounting: SMD
Gate charge: 9/12nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2220 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 65.98 грн |
| 10+ | 42.63 грн |
| 50+ | 31.14 грн |
| 100+ | 27.02 грн |
| 500+ | 19.05 грн |
| 1000+ | 17.88 грн |
| SMBJ14A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.6÷17.2V; 25.9A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.6÷17.2V; 25.9A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.6...17.2V
Max. forward impulse current: 25.9A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 686 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.56 грн |
| 41+ | 10.24 грн |
| 47+ | 8.98 грн |
| 100+ | 5.67 грн |
| 500+ | 4.24 грн |
| SMBJ14D-M3/H |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.8÷17V; 26.2A; unidirectional; ±3.5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.8...17V
Max. forward impulse current: 26.2A
Semiconductor structure: unidirectional
Tolerance: ±3.5%
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 15.8÷17V; 26.2A; unidirectional; ±3.5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.8...17V
Max. forward impulse current: 26.2A
Semiconductor structure: unidirectional
Tolerance: ±3.5%
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: 7 inch reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 707 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 15.36 грн |
| 46+ | 9.32 грн |
| 100+ | 6.21 грн |
| TR3A106K010C0900 |
|
Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 10VDC; SMD; A; 1206; ±10%; -55÷125°C; TR3
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 10V DC
Mounting: SMD
Case: A
Case - inch: 1206
Case - mm: 3216
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: TR3
ESR value: 900mΩ
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 10VDC; SMD; A; 1206; ±10%; -55÷125°C; TR3
Type of capacitor: tantalum
Capacitance: 10µF
Operating voltage: 10V DC
Mounting: SMD
Case: A
Case - inch: 1206
Case - mm: 3216
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: TR3
ESR value: 900mΩ
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од. на суму грн.
| TSOP94356 |
|
Виробник: VISHAY
Category: IR receiver modules
Description: Integrated IR receiver; 56kHz; 45°; 2÷3.6V
Mounting: THT
Type of photoelement: integrated IR receiver
Supply voltage: 2...3.6V
Viewing angle: 45°
Frequency: 56kHz
Category: IR receiver modules
Description: Integrated IR receiver; 56kHz; 45°; 2÷3.6V
Mounting: THT
Type of photoelement: integrated IR receiver
Supply voltage: 2...3.6V
Viewing angle: 45°
Frequency: 56kHz
на замовлення 750 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 52.42 грн |
| 13+ | 32.40 грн |
| 25+ | 28.37 грн |
| 90+ | 25.09 грн |
| 450+ | 23.42 грн |
| SI9435BDY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Pulsed drain current: -30A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Pulsed drain current: -30A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| SMCJ12A-E3/57T |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 13.3÷14.7V; 75.4A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 75.4A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 759 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 20.79 грн |
| 25+ | 17.29 грн |
| 26+ | 16.45 грн |
| 100+ | 14.02 грн |
| 200+ | 13.01 грн |
| 500+ | 12.84 грн |
| MMSZ5231B-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Quantity in set/package: 3000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 5.1V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Quantity in set/package: 3000pcs.
на замовлення 1510 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 8.13 грн |
| 88+ | 4.78 грн |
| 141+ | 2.99 грн |
| 500+ | 2.13 грн |
| 1000+ | 1.85 грн |
| MAL203034479E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 10VDC; Ø4.5x10mm; ±20%; 3000h
Leads: axial
Type of capacitor: electrolytic
Mounting: THT
Operating temperature: -40...85°C
Capacitance: 47µF
Diameter: 4.5mm
Body dimensions: Ø4.5x10mm
Height: 10mm
Operating voltage: 10V DC
Tolerance: ±20%
Service life: 3000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 10VDC; Ø4.5x10mm; ±20%; 3000h
Leads: axial
Type of capacitor: electrolytic
Mounting: THT
Operating temperature: -40...85°C
Capacitance: 47µF
Diameter: 4.5mm
Body dimensions: Ø4.5x10mm
Height: 10mm
Operating voltage: 10V DC
Tolerance: ±20%
Service life: 3000h
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| CRCW12063K00FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 500 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 0.90 грн |
| RCA12063K09FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1206; 3.09kΩ; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 3.09kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 1206; 3.09kΩ; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 3.09kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
на замовлення 4800 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 130+ | 3.50 грн |
| 170+ | 2.51 грн |
| 190+ | 2.25 грн |
| 500+ | 1.75 грн |
| 1000+ | 1.59 грн |
| RCA1206243KFKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1206; 243kΩ; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 243kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 1206; 243kΩ; 250mW; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 243kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
на замовлення 3940 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 130+ | 3.50 грн |
| 170+ | 2.51 грн |
| 190+ | 2.25 грн |
| 500+ | 1.75 грн |
| 1000+ | 1.59 грн |
| CRCW12063K90FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.9kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.9kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.9kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.9kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 9200 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 367+ | 1.23 грн |
| 500+ | 0.91 грн |
| 1000+ | 0.78 грн |
| 3000+ | 0.52 грн |
| 5000+ | 0.44 грн |
| CRCW12063K01FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.01kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.01kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.01kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.01kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 3705 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 2.80 грн |
| 500+ | 1.52 грн |
| 1000+ | 0.97 грн |
| CRCW12063K92FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.92kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.92kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.92kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.92kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 5000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5000+ | 0.44 грн |
| CRCW12063K83FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.83kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.83kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.83kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.83kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 1200 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 200+ | 2.80 грн |
| 500+ | 1.52 грн |
| 1000+ | 0.97 грн |
| CRCW12063K90JNTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.9kΩ; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.9kΩ
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.9kΩ; 0.25W; ±5%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.9kΩ
Power: 0.25W
Tolerance: ±5%
Operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 3400 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 2.03 грн |
| 500+ | 1.10 грн |
| 1000+ | 0.71 грн |
| CRCW12063K09FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.09kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.09kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 3.09kΩ; 0.25W; ±1%; 200V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 3.09kΩ
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 2600 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 2.24 грн |
| 500+ | 1.21 грн |
| 1000+ | 0.78 грн |
| SMBJ12A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 13.3÷14.7V; 30.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 13.3÷14.7V; 30.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
на замовлення 2136 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 13.56 грн |
| 38+ | 11.08 грн |
| 41+ | 10.32 грн |
| 100+ | 7.81 грн |
| 250+ | 6.80 грн |
| 500+ | 6.04 грн |
| 750+ | 5.71 грн |
| SMBJ12A-E3/5B |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 13.3÷14.7V; 30.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 13 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 13.3÷14.7V; 30.2A; unidirectional; ±5%; SMB; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 12V
Breakdown voltage: 13.3...14.7V
Max. forward impulse current: 30.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMBJ
Tolerance: ±5%
Kind of package: 13 inch reel; tape
Technology: TransZorb®
Features of semiconductor devices: glass passivated
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В кошику
од. на суму грн.
| SMCJ28A-E3/57T |
|
Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 31.1÷34.4V; 33A; unidirectional; ±5%; SMC; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 33A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Manufacturer series: SMCJ
Tolerance: ±5%
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 7 inch reel; tape
на замовлення 976 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 25.31 грн |
| 22+ | 19.30 грн |
| 50+ | 16.11 грн |
| 100+ | 14.69 грн |
| 250+ | 12.92 грн |
| 500+ | 12.84 грн |
| SIHD5N50D-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 104W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.4A
Pulsed drain current: 10A
Power dissipation: 104W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 104W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.4A
Pulsed drain current: 10A
Power dissipation: 104W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| SIHF5N50D-E3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 28.8W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.4A
Pulsed drain current: 10A
Power dissipation: 28.8W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 28.8W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.4A
Pulsed drain current: 10A
Power dissipation: 28.8W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| SIHP5N50D-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.4A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.4A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
| SIHU5N50D-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 104W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.4A
Pulsed drain current: 10A
Power dissipation: 104W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 3.4A; Idm: 10A; 104W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 3.4A
Pulsed drain current: 10A
Power dissipation: 104W
Case: IPAK; TO251
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
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В кошику
од. на суму грн.
| VSSAF5N50-M3/6A |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 5A
Mounting: SMD
Max. forward voltage: 0.41V
Load current: 5A
Max. off-state voltage: 50V
Max. forward impulse current: 100A
Leakage current: 1.4mA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 5A
Mounting: SMD
Max. forward voltage: 0.41V
Load current: 5A
Max. off-state voltage: 50V
Max. forward impulse current: 100A
Leakage current: 1.4mA
Type of diode: Schottky rectifying
Semiconductor structure: single diode
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В кошику
од. на суму грн.
| MAL215262109E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic
Type of capacitor: electrolytic
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic
Type of capacitor: electrolytic
на замовлення 1000 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 500+ | 44.02 грн |
| MAL215252101E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 200VDC; Ø16x20mm; Pitch: 7.5mm
Manufacturer series: MAL2152
Operating temperature: -40...105°C
Mounting: THT
Type of capacitor: electrolytic
Capacitance: 100µF
Terminal pitch: 7.5mm
Height: 20mm
Diameter: 16mm
Body dimensions: Ø16x20mm
Operating voltage: 200V DC
Tolerance: ±20%
Service life: 3000h
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 200VDC; Ø16x20mm; Pitch: 7.5mm
Manufacturer series: MAL2152
Operating temperature: -40...105°C
Mounting: THT
Type of capacitor: electrolytic
Capacitance: 100µF
Terminal pitch: 7.5mm
Height: 20mm
Diameter: 16mm
Body dimensions: Ø16x20mm
Operating voltage: 200V DC
Tolerance: ±20%
Service life: 3000h
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од. на суму грн.
| MAL215253339E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 33uF; 250VDC; Ø12.5x20mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 33µF
Operating voltage: 250V DC
Body dimensions: Ø12.5x20mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 3000h
Operating temperature: -40...105°C
Height: 20mm
Diameter: 12.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 33uF; 250VDC; Ø12.5x20mm; Pitch: 5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 33µF
Operating voltage: 250V DC
Body dimensions: Ø12.5x20mm
Terminal pitch: 5mm
Tolerance: ±20%
Service life: 3000h
Operating temperature: -40...105°C
Height: 20mm
Diameter: 12.5mm
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| SI3443BDV-T1-E3 | |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 86 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 31.63 грн |
| 21+ | 20.14 грн |
| 25+ | 18.13 грн |
| SI3443DDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SI3443CDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SI3443BDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -3.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.6A
Pulsed drain current: -20A
Power dissipation: 1.1W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SI3443CDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4.6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SI3443DDV-T1-BE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4A
Pulsed drain current: -20A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.