| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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CRCW120610K0JNEA | VISHAY |
 Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; -55÷125°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 10kΩ Power: 0.25W Tolerance: ±5% Max. operating voltage: 200V Operating temperature: -55...125°C |
на замовлення 9200 шт: термін постачання 21-30 дні (днів) |
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CRCW120610K0JNTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 10kΩ Power: 0.25W Tolerance: ±5% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 6500 шт: термін постачання 21-30 дні (днів) |
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SFH6156-2 | VISHAY |
 Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4.2µs Turn-off time: 23µs |
на замовлення 2365 шт: термін постачання 21-30 дні (днів) |
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SFH6156-2T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4.2µs Turn-off time: 23µs |
на замовлення 5507 шт: термін постачання 21-30 дні (днів) |
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SFH6156-2X001T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 4.2µs Turn-off time: 23µs |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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1N4001-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V |
товар відсутній |
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SM6T18A-E3/52 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 18V; 24A; unidirectional; ±5%; SMB; reel,tape; SM6T Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 18V Max. forward impulse current: 24A Semiconductor structure: unidirectional Tolerance: ±5% Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SM6T |
на замовлення 2870 шт: термін постачання 21-30 дні (днів) |
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BZD27C51P-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 2.3W; 51V; SMD; reel,tape; SMF; single diode; 1uA Type of diode: Zener Power dissipation: 2.3W Zener voltage: 51V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SMF Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: BZD27C |
товар відсутній |
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BZD27C56P-HE3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 2.3W; 56V; SMD; reel,tape; SMF; single diode; 1uA Type of diode: Zener Power dissipation: 2.3W Zener voltage: 56V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SMF Semiconductor structure: single diode Leakage current: 1µA Manufacturer series: BZD27C Application: automotive industry |
товар відсутній |
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BZD27C5V1P-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 2.3W; 5.1V; SMD; reel,tape; SMF; single diode; BZD27C Type of diode: Zener Power dissipation: 2.3W Zener voltage: 5.1V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SMF Semiconductor structure: single diode Manufacturer series: BZD27C |
на замовлення 1760 шт: термін постачання 21-30 дні (днів) |
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BZD27C5V6P-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 2.3W; 5.6V; SMD; reel,tape; SMF; single diode; BZD27C Type of diode: Zener Power dissipation: 2.3W Zener voltage: 5.6V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SMF Semiconductor structure: single diode Manufacturer series: BZD27C |
на замовлення 24510 шт: термін постачання 21-30 дні (днів) |
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BAT54W-HE3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; SOD123; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Reverse recovery time: 5ns Semiconductor structure: single diode Features of semiconductor devices: small signal Capacitance: 10pF Max. forward voltage: 0.8V Case: SOD123 Kind of package: reel; tape Leakage current: 2µA Max. forward impulse current: 0.6A Power dissipation: 0.15W |
на замовлення 2990 шт: термін постачання 21-30 дні (днів) |
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BAT54WS-E3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD323; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Max. load current: 0.3A Semiconductor structure: single diode Features of semiconductor devices: small signal Case: SOD323 Kind of package: reel; tape Max. forward impulse current: 0.6A |
на замовлення 3335 шт: термін постачання 21-30 дні (днів) |
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IRFP9140PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -15A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.2Ω Mounting: THT Gate charge: 61nC Kind of package: tube Kind of channel: enhanced |
на замовлення 432 шт: термін постачання 21-30 дні (днів) |
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1N4004-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V |
на замовлення 3925 шт: термін постачання 21-30 дні (днів) |
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1N4004-E3/73 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; Ammo Pack; Ifsm: 30A; DO41 Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Capacitance: 15pF Kind of package: Ammo Pack Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V |
на замовлення 27813 шт: термін постачання 21-30 дні (днів) |
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1N4004GP-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 8pF Max. forward impulse current: 30A Case: DO41 Max. forward voltage: 1.1V |
на замовлення 4094 шт: термін постачання 21-30 дні (днів) |
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IRF640PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced |
товар відсутній |
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IRF640SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 130W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 70nC Kind of package: tube Kind of channel: enhanced |
на замовлення 1050 шт: термін постачання 21-30 дні (днів) |
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IRF640STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 11A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 70nC Kind of package: reel; tape Kind of channel: enhanced |
товар відсутній |
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BAT54A-E3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Reverse recovery time: 5ns Semiconductor structure: common anode; double Features of semiconductor devices: small signal Capacitance: 10pF Max. forward voltage: 0.8V Case: SOT23 Kind of package: reel; tape Leakage current: 2µA Max. forward impulse current: 0.6A Power dissipation: 0.23W |
на замовлення 2535 шт: термін постачання 21-30 дні (днів) |
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BAT54A-HE3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Reverse recovery time: 5ns Semiconductor structure: common anode; double Features of semiconductor devices: small signal Capacitance: 10pF Max. forward voltage: 0.8V Case: SOT23 Kind of package: reel; tape Leakage current: 2µA Max. forward impulse current: 0.6A Power dissipation: 0.23W |
на замовлення 2760 шт: термін постачання 21-30 дні (днів) |
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BAT54S-E3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Max. load current: 0.3A Reverse recovery time: 5ns Semiconductor structure: double series Features of semiconductor devices: small signal Capacitance: 10pF Max. forward voltage: 0.24V Case: SOT23 Kind of package: reel; tape Max. forward impulse current: 0.6A Power dissipation: 0.23W |
на замовлення 15637 шт: термін постачання 21-30 дні (днів) |
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BAT54S-HE3-08 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape Type of diode: Schottky switching Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Reverse recovery time: 5ns Semiconductor structure: double series Features of semiconductor devices: small signal Capacitance: 10pF Max. forward voltage: 0.8V Case: SOT23 Kind of package: reel; tape Leakage current: 2µA Max. forward impulse current: 0.6A Power dissipation: 0.23W |
на замовлення 6300 шт: термін постачання 21-30 дні (днів) |
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VS-10BQ100-M3/5BT | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 1A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.59V Case: SMB Kind of package: reel; tape Max. forward impulse current: 38A |
на замовлення 7265 шт: термін постачання 21-30 дні (днів) |
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| VS-10BQ100HM3/5BT | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 100V; 1A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Semiconductor structure: single diode Capacitance: 65pF Max. forward voltage: 0.82V Case: SMB Kind of package: reel; tape Max. forward impulse current: 780A |
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SI2307BDS-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.5A Pulsed drain current: -12A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 78mΩ Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhanced |
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SI2307CDS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.2A Power dissipation: 1.8W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 138mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 9355 шт: термін постачання 21-30 дні (днів) |
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SMAJ15A-E3/61 | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 300W; 16.7V; 16.4A; unidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 15V Breakdown voltage: 16.7V Max. forward impulse current: 16.4A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMAJ |
на замовлення 4797 шт: термін постачання 21-30 дні (днів) |
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VS-ETH3006FP-M3 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 180A; TO220FP-2; 27ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode Features of semiconductor devices: ultrafast switching Kind of package: tube Max. forward impulse current: 180A Case: TO220FP-2 Max. forward voltage: 1.4V Reverse recovery time: 27ns |
на замовлення 550 шт: термін постачання 21-30 дні (днів) |
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IRFP240PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 12A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhanced |
на замовлення 336 шт: термін постачання 21-30 дні (днів) |
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T63XB103KT20 | VISHAY |
Category: 1/4 inch multiturn THT trimmers Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT Mounting: THT Resistance: 10kΩ Power: 0.25W Tolerance: ±10% Max. operating voltage: 250V Body dimensions: 6.8x6.8x5mm Operating temperature: -55...155°C Terminal pitch: 2.5x2.5mm Temperature coefficient: 100ppm/°C Track material: cermet Kind of potentiometer: multiturn IP rating: IP67 Potentiometer standard: 1/4" Type of potentiometer: mounting Number of mechanical turns: 15 ±5 Number of electrical turns: 13 ±2 Potentiometer series: T63XB Characteristics: linear Torque: 1Ncm |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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T63YB103KT20 | VISHAY |
Category: 1/4 inch multiturn THT trimmers Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT Mounting: THT Resistance: 10kΩ Power: 0.25W Tolerance: ±10% Max. operating voltage: 250V Body dimensions: 6.8x6.8x5mm Operating temperature: -55...155°C Terminal pitch: 2.5x2.5mm Temperature coefficient: 100ppm/°C Track material: cermet Kind of potentiometer: multiturn IP rating: IP67 Potentiometer standard: 1/4" Type of potentiometer: mounting Number of mechanical turns: 15 ±5 Number of electrical turns: 13 ±2 Potentiometer series: T63YB Characteristics: linear Torque: 1Ncm |
на замовлення 695 шт: термін постачання 21-30 дні (днів) |
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T93XB103KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmers Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear Mounting: THT Resistance: 10kΩ Power: 0.5W Tolerance: ±10% Max. operating voltage: 250V Body dimensions: 9.8x9.8x5mm Operating temperature: -55...125°C Terminal pitch: 2.5x2.5mm Temperature coefficient: 100ppm/°C Track material: cermet Kind of potentiometer: multiturn Engineering PN: 64Z; 67Z; 3296Z IP rating: IP67 Potentiometer standard: 3/8" Type of potentiometer: mounting Number of mechanical turns: 22 ±5 Number of electrical turns: 19 ±2 Potentiometer series: T93XB Characteristics: linear Torque: 1,5Ncm |
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T93YB103KT20 | VISHAY |
Category: 3/8 inch multiturn THT trimmers Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear Type of potentiometer: mounting Kind of potentiometer: multiturn Resistance: 10kΩ Power: 0.5W Mounting: THT Tolerance: ±10% Characteristics: linear Potentiometer series: T93YB Track material: cermet Operating temperature: -55...125°C Potentiometer standard: 3/8" Temperature coefficient: 100ppm/°C Body dimensions: 9.8x9.8x5mm Terminal pitch: 2.5x2.5mm Number of electrical turns: 19 ±2 Max. operating voltage: 250V Number of mechanical turns: 22 ±5 Engineering PN: 64Y; 67Y; 3296Y IP rating: IP67 Torque: 1,5Ncm |
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1N5400-E3/54 | VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 3A; reel,tape; Ifsm: 200A; DO201AD Type of diode: rectifying Mounting: THT Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Capacitance: 30pF Kind of package: reel; tape Max. forward impulse current: 200A Case: DO201AD Max. forward voltage: 1.2V Leakage current: 0.5mA |
на замовлення 31 шт: термін постачання 21-30 дні (днів) |
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VS-36MT60 | VISHAY |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT Case: D-63 Load current: 35A Kind of package: bulk Electrical mounting: THT Version: square Type of bridge rectifier: three-phase Max. off-state voltage: 0.6kV Max. forward impulse current: 475A Leads: connectors 6,3x0,8mm Max. forward voltage: 1.19V |
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VS-36MT80 | VISHAY |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 800V; If: 35A; Ifsm: 475A; THT Case: D-63 Load current: 35A Kind of package: bulk Electrical mounting: THT Version: square Type of bridge rectifier: three-phase Max. off-state voltage: 0.8kV Max. forward impulse current: 475A Leads: connectors 6,3x0,8mm Max. forward voltage: 1.19V |
на замовлення 9 шт: термін постачання 21-30 дні (днів) |
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SQ2308CES-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 2A; Idm: 9A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 9A Power dissipation: 2W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.325Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhanced |
на замовлення 2122 шт: термін постачання 21-30 дні (днів) |
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SIHB12N60E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIHB12N60ET1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 147W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIHF12N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhanced |
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| SIHP12N60E-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.8A Pulsed drain current: 27A Power dissipation: 147W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 58nC Kind of package: tube Kind of channel: enhanced |
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GBPC1204-E4/51 | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 12A; Ifsm: 200A Kind of package: bulk Electrical mounting: THT Version: square Type of bridge rectifier: single-phase Features of semiconductor devices: glass passivated Case: GBPC Leads: connectors FASTON Max. off-state voltage: 0.4kV Max. forward voltage: 1.1V Load current: 12A Max. forward impulse current: 200A |
на замовлення 120 шт: термін постачання 21-30 дні (днів) |
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BZX55C13-TAP | VISHAY |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 13V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 13V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 30850 шт: термін постачання 21-30 дні (днів) |
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IRFP22N50APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Power dissipation: 277W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.23Ω Mounting: THT Gate charge: 0.12µC Kind of package: tube Kind of channel: enhanced |
на замовлення 534 шт: термін постачання 21-30 дні (днів) |
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IRFP23N50LPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 23A; Idm: 92A; 370W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 23A Pulsed drain current: 92A Power dissipation: 370W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.235Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhanced |
на замовлення 136 шт: термін постачання 21-30 дні (днів) |
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IRFP244PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 9.7A Power dissipation: 150W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhanced |
на замовлення 385 шт: термін постачання 21-30 дні (днів) |
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IRFP250PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 19A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced |
на замовлення 195 шт: термін постачання 21-30 дні (днів) |
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IRFP254PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 23A Pulsed drain current: 92A Power dissipation: 190W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: THT Gate charge: 0.14µC Kind of package: tube Kind of channel: enhanced |
на замовлення 308 шт: термін постачання 21-30 дні (днів) |
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IRFP260PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 29A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 55mΩ Mounting: THT Gate charge: 230nC Kind of package: tube Kind of channel: enhanced |
на замовлення 795 шт: термін постачання 21-30 дні (днів) |
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IRFP264PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 24A Power dissipation: 280W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.75Ω Mounting: THT Gate charge: 0.21µC Kind of package: tube Kind of channel: enhanced |
на замовлення 690 шт: термін постачання 21-30 дні (днів) |
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IRFP27N60KPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 500W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 500W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.22Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhanced |
на замовлення 218 шт: термін постачання 21-30 дні (днів) |
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| SB140-E3/54 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; reel,tape; Ir: 10mA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 40V Load current: 1A Semiconductor structure: single diode Case: DO41 Kind of package: reel; tape Max. forward impulse current: 50A Max. forward voltage: 0.48V Leakage current: 10mA |
товар відсутній |
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1.5KE6.8CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 5.8V Breakdown voltage: 6.8V Max. forward impulse current: 143A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: 1.5KE |
на замовлення 1021 шт: термін постачання 21-30 дні (днів) |
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SS34-E3/57T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 3A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: SMC Kind of package: reel; tape Max. forward impulse current: 100A |
на замовлення 5240 шт: термін постачання 21-30 дні (днів) |
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| SS34-E3/9AT | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 3A; SMC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Max. forward voltage: 0.5V Case: SMC Kind of package: reel; tape Leakage current: 20mA Max. forward impulse current: 100A |
товар відсутній |
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VS-50RIA60 | VISHAY |
Category: Stud mounting thyristors Description: Thyristor: stud; 600V; Ifmax: 80A; 50A; Igt: 100mA; TO208AC,TO65 Semiconductor structure: anode to stud Max. off-state voltage: 0.6kV Load current: 50A Max. load current: 80A Case: TO65; TO208AC Max. forward impulse current: 1.43kA Gate current: 100mA Mounting: screw Kind of package: bulk Manufacturer series: VS-50RIA Fastening thread: 1/4"-28UNF-2A Type of thyristor: stud |
товар відсутній |
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SS15P3S-M3/87A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 1A; SMA; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.75V Case: SMA Kind of package: reel; tape Max. forward impulse current: 40A |
товар відсутній |
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VF20100C-M3/4W | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 10A x2 Semiconductor structure: common cathode; double Case: TO220FP Kind of package: tube Max. forward impulse current: 150A Max. forward voltage: 0.79V |
товар відсутній |
| CRCW120610K0JNEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Operating temperature: -55...125°C
на замовлення 9200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.84 грн |
| 500+ | 0.83 грн |
| 1000+ | 0.72 грн |
| 1200+ | 0.69 грн |
| 3300+ | 0.65 грн |
| CRCW120610K0JNTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 10kΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±5%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 6500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.5 грн |
| 1000+ | 0.46 грн |
| 4000+ | 0.2 грн |
| SFH6156-2 | |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
на замовлення 2365 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 42.58 грн |
| 16+ | 23.03 грн |
| 90+ | 8.88 грн |
| 248+ | 8.39 грн |
| 2000+ | 8.32 грн |
| SFH6156-2T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
на замовлення 5507 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 42.58 грн |
| 16+ | 23.03 грн |
| 83+ | 9.71 грн |
| 228+ | 9.16 грн |
| 2000+ | 8.88 грн |
| SFH6156-2X001T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 4.2µs
Turn-off time: 23µs
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.76 грн |
| 1N4001-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
товар відсутній
| SM6T18A-E3/52 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 24A; unidirectional; ±5%; SMB; reel,tape; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SM6T
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 18V; 24A; unidirectional; ±5%; SMB; reel,tape; SM6T
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 18V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SM6T
на замовлення 2870 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 9.86 грн |
| 55+ | 6.87 грн |
| 100+ | 6.04 грн |
| 155+ | 5.24 грн |
| 425+ | 4.95 грн |
| BZD27C51P-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 2.3W; 51V; SMD; reel,tape; SMF; single diode; 1uA
Type of diode: Zener
Power dissipation: 2.3W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SMF
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZD27C
Category: SMD Zener diodes
Description: Diode: Zener; 2.3W; 51V; SMD; reel,tape; SMF; single diode; 1uA
Type of diode: Zener
Power dissipation: 2.3W
Zener voltage: 51V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SMF
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZD27C
товар відсутній
| BZD27C56P-HE3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 2.3W; 56V; SMD; reel,tape; SMF; single diode; 1uA
Type of diode: Zener
Power dissipation: 2.3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SMF
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZD27C
Application: automotive industry
Category: SMD Zener diodes
Description: Diode: Zener; 2.3W; 56V; SMD; reel,tape; SMF; single diode; 1uA
Type of diode: Zener
Power dissipation: 2.3W
Zener voltage: 56V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SMF
Semiconductor structure: single diode
Leakage current: 1µA
Manufacturer series: BZD27C
Application: automotive industry
товар відсутній
| BZD27C5V1P-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 2.3W; 5.1V; SMD; reel,tape; SMF; single diode; BZD27C
Type of diode: Zener
Power dissipation: 2.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SMF
Semiconductor structure: single diode
Manufacturer series: BZD27C
Category: SMD Zener diodes
Description: Diode: Zener; 2.3W; 5.1V; SMD; reel,tape; SMF; single diode; BZD27C
Type of diode: Zener
Power dissipation: 2.3W
Zener voltage: 5.1V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SMF
Semiconductor structure: single diode
Manufacturer series: BZD27C
на замовлення 1760 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 40+ | 9.86 грн |
| 45+ | 8.25 грн |
| 100+ | 7.28 грн |
| 130+ | 6.29 грн |
| 355+ | 5.95 грн |
| BZD27C5V6P-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 2.3W; 5.6V; SMD; reel,tape; SMF; single diode; BZD27C
Type of diode: Zener
Power dissipation: 2.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMF
Semiconductor structure: single diode
Manufacturer series: BZD27C
Category: SMD Zener diodes
Description: Diode: Zener; 2.3W; 5.6V; SMD; reel,tape; SMF; single diode; BZD27C
Type of diode: Zener
Power dissipation: 2.3W
Zener voltage: 5.6V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SMF
Semiconductor structure: single diode
Manufacturer series: BZD27C
на замовлення 24510 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.65 грн |
| 45+ | 7.77 грн |
| 100+ | 6.94 грн |
| 135+ | 6.04 грн |
| 365+ | 5.76 грн |
| BAT54W-HE3-08 |
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; SOD123; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOD123
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.15W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; SOD123; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOD123
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.15W
на замовлення 2990 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.75 грн |
| 100+ | 4.2 грн |
| 250+ | 3.33 грн |
| 670+ | 3.15 грн |
| BAT54WS-E3-08 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; SOD323; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 0.6A
на замовлення 3335 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 14.19 грн |
| 33+ | 10.54 грн |
| 42+ | 8.44 грн |
| 100+ | 5.06 грн |
| 250+ | 4.43 грн |
| 263+ | 3.05 грн |
| 722+ | 2.89 грн |
| IRFP9140PBF |
|
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 180W; TO247AC
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.2Ω
Mounting: THT
Gate charge: 61nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 432 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 106.83 грн |
| 5+ | 94.34 грн |
| 11+ | 76.31 грн |
| 29+ | 72.14 грн |
| 1N4004-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
на замовлення 3925 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 24+ | 15.69 грн |
| 33+ | 10.68 грн |
| 49+ | 7.1 грн |
| 100+ | 5.33 грн |
| 469+ | 1.71 грн |
| 1288+ | 1.62 грн |
| 1N4004-E3/73 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ammo Pack; Ifsm: 30A; DO41
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Capacitance: 15pF
Kind of package: Ammo Pack
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
на замовлення 27813 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 14.19 грн |
| 35+ | 10.13 грн |
| 52+ | 6.71 грн |
| 100+ | 5.04 грн |
| 491+ | 1.64 грн |
| 1350+ | 1.55 грн |
| 1N4004GP-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 8pF
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
на замовлення 4094 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 58.27 грн |
| 9+ | 40.37 грн |
| 25+ | 26.91 грн |
| 100+ | 20.26 грн |
| 122+ | 6.59 грн |
| 336+ | 6.24 грн |
| IRF640PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRF640SPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 130W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; 130W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 1050 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 77.69 грн |
| 10+ | 65.9 грн |
| 17+ | 49.25 грн |
| 45+ | 47.17 грн |
| IRF640STRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 11A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 70nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| BAT54A-E3-08 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOT23
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOT23
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
на замовлення 2535 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 70+ | 5.38 грн |
| 120+ | 2.99 грн |
| 355+ | 2.29 грн |
| 970+ | 2.16 грн |
| BAT54A-HE3-08 |
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOT23
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: common anode; double
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOT23
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
на замовлення 2760 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 75+ | 5.3 грн |
| 115+ | 3.11 грн |
| 315+ | 2.59 грн |
| 855+ | 2.44 грн |
| BAT54S-E3-08 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: double series
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.24V
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: double series
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.24V
Case: SOT23
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
на замовлення 15637 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 62+ | 6.05 грн |
| 148+ | 2.35 грн |
| 411+ | 1.96 грн |
| 1129+ | 1.85 грн |
| 12000+ | 1.78 грн |
| BAT54S-HE3-08 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: double series
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOT23
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SMD; 30V; 0.2A; 5ns; SOT23; reel,tape
Type of diode: Schottky switching
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Reverse recovery time: 5ns
Semiconductor structure: double series
Features of semiconductor devices: small signal
Capacitance: 10pF
Max. forward voltage: 0.8V
Case: SOT23
Kind of package: reel; tape
Leakage current: 2µA
Max. forward impulse current: 0.6A
Power dissipation: 0.23W
на замовлення 6300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 5.98 грн |
| 100+ | 3.48 грн |
| 290+ | 2.79 грн |
| 795+ | 2.64 грн |
| VS-10BQ100-M3/5BT |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 38A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.59V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 38A
на замовлення 7265 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 13.9 грн |
| 45+ | 8.6 грн |
| 100+ | 7.77 грн |
| 115+ | 7.14 грн |
| 310+ | 6.73 грн |
| 3200+ | 6.52 грн |
| VS-10BQ100HM3/5BT |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 65pF
Max. forward voltage: 0.82V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 780A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 100V; 1A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 65pF
Max. forward voltage: 0.82V
Case: SMB
Kind of package: reel; tape
Max. forward impulse current: 780A
товар відсутній
| SI2307BDS-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.5A; Idm: -12A; 0.48W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.5A
Pulsed drain current: -12A
Power dissipation: 0.48W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SI2307CDS-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 138mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.2A; 1.8W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.2A
Power dissipation: 1.8W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 138mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 9355 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 19+ | 20.39 грн |
| 25+ | 14.29 грн |
| 74+ | 10.96 грн |
| 202+ | 10.34 грн |
| SMAJ15A-E3/61 |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 16.7V; 16.4A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMAJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 300W; 16.7V; 16.4A; unidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7V
Max. forward impulse current: 16.4A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMAJ
на замовлення 4797 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 31+ | 12.1 грн |
| 59+ | 5.97 грн |
| 100+ | 5.27 грн |
| 175+ | 4.59 грн |
| 481+ | 4.34 грн |
| VS-ETH3006FP-M3 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 180A; TO220FP-2; 27ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 27ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; tube; Ifsm: 180A; TO220FP-2; 27ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Features of semiconductor devices: ultrafast switching
Kind of package: tube
Max. forward impulse current: 180A
Case: TO220FP-2
Max. forward voltage: 1.4V
Reverse recovery time: 27ns
на замовлення 550 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 134.47 грн |
| 4+ | 111.68 грн |
| 10+ | 86.02 грн |
| 27+ | 81.16 грн |
| IRFP240PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 336 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 112.06 грн |
| 5+ | 93.65 грн |
| 11+ | 74.22 грн |
| 30+ | 70.06 грн |
| 250+ | 69.37 грн |
| T63XB103KT20 |
|
Виробник: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Mounting: THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Max. operating voltage: 250V
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Terminal pitch: 2.5x2.5mm
Temperature coefficient: 100ppm/°C
Track material: cermet
Kind of potentiometer: multiturn
IP rating: IP67
Potentiometer standard: 1/4"
Type of potentiometer: mounting
Number of mechanical turns: 15 ±5
Number of electrical turns: 13 ±2
Potentiometer series: T63XB
Characteristics: linear
Torque: 1Ncm
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Mounting: THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Max. operating voltage: 250V
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Terminal pitch: 2.5x2.5mm
Temperature coefficient: 100ppm/°C
Track material: cermet
Kind of potentiometer: multiturn
IP rating: IP67
Potentiometer standard: 1/4"
Type of potentiometer: mounting
Number of mechanical turns: 15 ±5
Number of electrical turns: 13 ±2
Potentiometer series: T63XB
Characteristics: linear
Torque: 1Ncm
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 373.52 грн |
| T63YB103KT20 |
|
Виробник: VISHAY
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Mounting: THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Max. operating voltage: 250V
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Terminal pitch: 2.5x2.5mm
Temperature coefficient: 100ppm/°C
Track material: cermet
Kind of potentiometer: multiturn
IP rating: IP67
Potentiometer standard: 1/4"
Type of potentiometer: mounting
Number of mechanical turns: 15 ±5
Number of electrical turns: 13 ±2
Potentiometer series: T63YB
Characteristics: linear
Torque: 1Ncm
Category: 1/4 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 250mW; ±10%; linear; THT
Mounting: THT
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±10%
Max. operating voltage: 250V
Body dimensions: 6.8x6.8x5mm
Operating temperature: -55...155°C
Terminal pitch: 2.5x2.5mm
Temperature coefficient: 100ppm/°C
Track material: cermet
Kind of potentiometer: multiturn
IP rating: IP67
Potentiometer standard: 1/4"
Type of potentiometer: mounting
Number of mechanical turns: 15 ±5
Number of electrical turns: 13 ±2
Potentiometer series: T63YB
Characteristics: linear
Torque: 1Ncm
на замовлення 695 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 215.15 грн |
| 5+ | 162.32 грн |
| 7+ | 115.85 грн |
| 19+ | 109.6 грн |
| T93XB103KT20 |
|
Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Mounting: THT
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Max. operating voltage: 250V
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Terminal pitch: 2.5x2.5mm
Temperature coefficient: 100ppm/°C
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 64Z; 67Z; 3296Z
IP rating: IP67
Potentiometer standard: 3/8"
Type of potentiometer: mounting
Number of mechanical turns: 22 ±5
Number of electrical turns: 19 ±2
Potentiometer series: T93XB
Characteristics: linear
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Mounting: THT
Resistance: 10kΩ
Power: 0.5W
Tolerance: ±10%
Max. operating voltage: 250V
Body dimensions: 9.8x9.8x5mm
Operating temperature: -55...125°C
Terminal pitch: 2.5x2.5mm
Temperature coefficient: 100ppm/°C
Track material: cermet
Kind of potentiometer: multiturn
Engineering PN: 64Z; 67Z; 3296Z
IP rating: IP67
Potentiometer standard: 3/8"
Type of potentiometer: mounting
Number of mechanical turns: 22 ±5
Number of electrical turns: 19 ±2
Potentiometer series: T93XB
Characteristics: linear
Torque: 1,5Ncm
товар відсутній
| T93YB103KT20 |
|
Виробник: VISHAY
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 10kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T93YB
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard: 3/8"
Temperature coefficient: 100ppm/°C
Body dimensions: 9.8x9.8x5mm
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1,5Ncm
Category: 3/8 inch multiturn THT trimmers
Description: Potentiometer: mounting; multiturn; 10kΩ; 500mW; THT; ±10%; linear
Type of potentiometer: mounting
Kind of potentiometer: multiturn
Resistance: 10kΩ
Power: 0.5W
Mounting: THT
Tolerance: ±10%
Characteristics: linear
Potentiometer series: T93YB
Track material: cermet
Operating temperature: -55...125°C
Potentiometer standard: 3/8"
Temperature coefficient: 100ppm/°C
Body dimensions: 9.8x9.8x5mm
Terminal pitch: 2.5x2.5mm
Number of electrical turns: 19 ±2
Max. operating voltage: 250V
Number of mechanical turns: 22 ±5
Engineering PN: 64Y; 67Y; 3296Y
IP rating: IP67
Torque: 1,5Ncm
товар відсутній
| 1N5400-E3/54 |
|
Виробник: VISHAY
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; reel,tape; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 30pF
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Leakage current: 0.5mA
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 3A; reel,tape; Ifsm: 200A; DO201AD
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 30pF
Kind of package: reel; tape
Max. forward impulse current: 200A
Case: DO201AD
Max. forward voltage: 1.2V
Leakage current: 0.5mA
на замовлення 31 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 26.89 грн |
| 17+ | 20.81 грн |
| 18+ | 19.77 грн |
| 25+ | 16.58 грн |
| VS-36MT60 |
|
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Case: D-63
Load current: 35A
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Max. forward impulse current: 475A
Leads: connectors 6,3x0,8mm
Max. forward voltage: 1.19V
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 600V; If: 35A; Ifsm: 475A; THT
Case: D-63
Load current: 35A
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.6kV
Max. forward impulse current: 475A
Leads: connectors 6,3x0,8mm
Max. forward voltage: 1.19V
товар відсутній
| VS-36MT80 |
|
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 35A; Ifsm: 475A; THT
Case: D-63
Load current: 35A
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Max. forward impulse current: 475A
Leads: connectors 6,3x0,8mm
Max. forward voltage: 1.19V
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 800V; If: 35A; Ifsm: 475A; THT
Case: D-63
Load current: 35A
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: three-phase
Max. off-state voltage: 0.8kV
Max. forward impulse current: 475A
Leads: connectors 6,3x0,8mm
Max. forward voltage: 1.19V
на замовлення 9 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 898.69 грн |
| 3+ | 788.72 грн |
| SQ2308CES-T1_GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 2A; Idm: 9A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 9A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 2A; Idm: 9A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 9A
Power dissipation: 2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.325Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2122 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 49.3 грн |
| 14+ | 24.97 грн |
| 25+ | 21.78 грн |
| 42+ | 19.7 грн |
| 114+ | 18.59 грн |
| 500+ | 18.45 грн |
| SIHB12N60E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; 147W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHB12N60ET1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIHF12N60E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHP12N60E-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.8A; Idm: 27A; 147W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 27A
Power dissipation: 147W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 58nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| GBPC1204-E4/51 |
|
Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 12A; Ifsm: 200A
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: single-phase
Features of semiconductor devices: glass passivated
Case: GBPC
Leads: connectors FASTON
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 12A
Max. forward impulse current: 200A
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 400V; If: 12A; Ifsm: 200A
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: single-phase
Features of semiconductor devices: glass passivated
Case: GBPC
Leads: connectors FASTON
Max. off-state voltage: 0.4kV
Max. forward voltage: 1.1V
Load current: 12A
Max. forward impulse current: 200A
на замовлення 120 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 220.38 грн |
| 3+ | 184.52 грн |
| 6+ | 140.82 грн |
| 16+ | 133.19 грн |
| BZX55C13-TAP | |
|
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 13V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 13V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 30850 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 120+ | 3.32 грн |
| 230+ | 1.56 грн |
| 500+ | 1.25 грн |
| 700+ | 1.15 грн |
| 1920+ | 1.09 грн |
| 10000+ | 1.05 грн |
| IRFP22N50APBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; 277W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Power dissipation: 277W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.23Ω
Mounting: THT
Gate charge: 0.12µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 534 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 211.41 грн |
| 5+ | 176.89 грн |
| 6+ | 138.04 грн |
| 16+ | 130.41 грн |
| IRFP23N50LPBF | |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; Idm: 92A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 23A; Idm: 92A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.235Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 136 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 276.41 грн |
| 5+ | 176.2 грн |
| 13+ | 167.18 грн |
| IRFP244PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.7A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 9.7A; 150W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 9.7A
Power dissipation: 150W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 385 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 119.53 грн |
| 5+ | 99.2 грн |
| 11+ | 76.31 грн |
| 29+ | 72.14 грн |
| IRFP250PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 19A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 19A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 195 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 116.54 грн |
| 5+ | 97.12 грн |
| 11+ | 77.69 грн |
| 29+ | 72.84 грн |
| IRFP254PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 23A; Idm: 92A; 190W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 23A
Pulsed drain current: 92A
Power dissipation: 190W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 308 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 155.38 грн |
| 5+ | 129.72 грн |
| 8+ | 102.67 грн |
| 22+ | 97.12 грн |
| IRFP260PBF | |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 29A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 29A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 55mΩ
Mounting: THT
Gate charge: 230nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 795 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 235.32 грн |
| 5+ | 197.01 грн |
| 6+ | 151.22 грн |
| 15+ | 142.9 грн |
| IRFP264PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 24A; 280W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 24A
Power dissipation: 280W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 0.21µC
Kind of package: tube
Kind of channel: enhanced
на замовлення 690 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 205.44 грн |
| 5+ | 180.36 грн |
| 6+ | 151.22 грн |
| 15+ | 142.2 грн |
| 100+ | 140.12 грн |
| IRFP27N60KPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 500W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 500W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 18A; 500W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 500W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.22Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhanced
на замовлення 218 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 372.77 грн |
| 4+ | 241.4 грн |
| 10+ | 228.22 грн |
| SB140-E3/54 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; reel,tape; Ir: 10mA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. forward voltage: 0.48V
Leakage current: 10mA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 40V; 1A; DO41; reel,tape; Ir: 10mA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Case: DO41
Kind of package: reel; tape
Max. forward impulse current: 50A
Max. forward voltage: 0.48V
Leakage current: 10mA
товар відсутній
| 1.5KE6.8CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 6.8V; 143A; bidirectional; DO201; 1.5kW; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 5.8V
Breakdown voltage: 6.8V
Max. forward impulse current: 143A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: 1.5KE
на замовлення 1021 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 28.91 грн |
| 15+ | 24.21 грн |
| 44+ | 18.52 грн |
| 120+ | 17.48 грн |
| SS34-E3/57T |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Max. forward impulse current: 100A
на замовлення 5240 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 23+ | 16.96 грн |
| 30+ | 11.65 грн |
| 87+ | 9.32 грн |
| 237+ | 8.81 грн |
| 1700+ | 8.67 грн |
| SS34-E3/9AT |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Leakage current: 20mA
Max. forward impulse current: 100A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SMC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Case: SMC
Kind of package: reel; tape
Leakage current: 20mA
Max. forward impulse current: 100A
товар відсутній
| VS-50RIA60 |
|
Виробник: VISHAY
Category: Stud mounting thyristors
Description: Thyristor: stud; 600V; Ifmax: 80A; 50A; Igt: 100mA; TO208AC,TO65
Semiconductor structure: anode to stud
Max. off-state voltage: 0.6kV
Load current: 50A
Max. load current: 80A
Case: TO65; TO208AC
Max. forward impulse current: 1.43kA
Gate current: 100mA
Mounting: screw
Kind of package: bulk
Manufacturer series: VS-50RIA
Fastening thread: 1/4"-28UNF-2A
Type of thyristor: stud
Category: Stud mounting thyristors
Description: Thyristor: stud; 600V; Ifmax: 80A; 50A; Igt: 100mA; TO208AC,TO65
Semiconductor structure: anode to stud
Max. off-state voltage: 0.6kV
Load current: 50A
Max. load current: 80A
Case: TO65; TO208AC
Max. forward impulse current: 1.43kA
Gate current: 100mA
Mounting: screw
Kind of package: bulk
Manufacturer series: VS-50RIA
Fastening thread: 1/4"-28UNF-2A
Type of thyristor: stud
товар відсутній
| SS15P3S-M3/87A |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 1A; SMA; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Case: SMA
Kind of package: reel; tape
Max. forward impulse current: 40A
товар відсутній
| VF20100C-M3/4W |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.79V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 10Ax2; TO220FP; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 10A x2
Semiconductor structure: common cathode; double
Case: TO220FP
Kind of package: tube
Max. forward impulse current: 150A
Max. forward voltage: 0.79V
товар відсутній