| Фото | Назва | Виробник | Інформація |
Доступність |
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| ZSC00AG4702AARL | VISHAY |
 Category: SMD electrolytic capacitorsDescription: Capacitor: electrolytic; low ESR; SMD; 47uF; 100VDC; Ø10x10mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 47µF Operating voltage: 100V DC Body dimensions: Ø10x10mm Tolerance: ±20% Operating temperature: -55...105°C |
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| SIHG17N60D-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.7A; Idm: 48A; 277.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.7A Pulsed drain current: 48A Power dissipation: 277.8W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.34Ω Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced |
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| SIHP17N60D-GE3 | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.7A; Idm: 48A; 277.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.7A Pulsed drain current: 48A Power dissipation: 277.8W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.34Ω Mounting: THT Gate charge: 90nC Kind of package: tube Kind of channel: enhanced |
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GSC00AF2211EARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 220uF; 25VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Capacitance: 220µF Operating voltage: 25V DC Capacitors series: GSC Mounting: SMD Tolerance: ±20% Operating temperature: -55...105°C Dimensions: 8x10mm Height: 10mm Nominal life: 2000h |
на замовлення 850 шт: термін постачання 21-30 дні (днів) |
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| GSC00XM2211EARL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 220uF; 25VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 220µF Operating voltage: 25V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 10x7.7mm Height: 7.7mm |
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| GSC00XM2211ETFL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 220uF; 25VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 220µF Operating voltage: 25V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 10x7.7mm Height: 7.7mm |
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| SI7820DN-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 2.6A; Idm: 10A Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Drain-source voltage: 200V Drain current: 2.6A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 3.8W Polarisation: unipolar Gate charge: 18nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A |
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| SI7820DN-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 2.6A; Idm: 10A Mounting: SMD Case: PowerPAK® 1212-8 Kind of package: reel; tape Drain-source voltage: 200V Drain current: 2.6A On-state resistance: 0.25Ω Type of transistor: N-MOSFET Power dissipation: 3.8W Polarisation: unipolar Gate charge: 18nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 10A |
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| GSC00AG2211HTFL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 220uF; 50VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Capacitance: 220µF Operating voltage: 50V DC Mounting: SMD Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Height: 10mm Dimensions: 10x10mm Nominal life: 2000h |
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VS-36MB160A | VISHAY |
Category: Square single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 35A; Ifsm: 475A Case: D-34 Kind of package: bulk Max. off-state voltage: 1.6kV Max. forward voltage: 1.3V Max. forward impulse current: 475A Electrical mounting: THT Version: square Type of bridge rectifier: single-phase Load current: 35A Leads: connectors FASTON |
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| SI1330EDL-T1-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A Case: SC70; SOT323 Mounting: SMD Gate charge: 0.6nC Polarisation: unipolar Technology: TrenchFET® Drain current: 0.25A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 8Ω Pulsed drain current: 1A Power dissipation: 0.31W |
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SI1330EDL-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; 0.18W; SC70 Case: SC70 Mounting: SMD Gate charge: 0.4nC Polarisation: unipolar Features of semiconductor devices: ESD protected gate Drain current: 0.19A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 2.5Ω Power dissipation: 0.18W |
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| SI1330EDL-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A Case: SC70; SOT323 Mounting: SMD Gate charge: 0.6nC Polarisation: unipolar Technology: TrenchFET® Drain current: 0.25A Kind of channel: enhanced Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 8Ω Pulsed drain current: 1A Power dissipation: 0.31W |
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| GSC00AG4711ETNL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 470uF; 25VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 470µF Operating voltage: 25V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 10x10mm Height: 10mm |
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CRCW25128R20JNEG | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 8.2Ω; 1W; ±5%; -55÷155°C; 200ppm/°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 8.2Ω Power: 1W Tolerance: ±5% Max. operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C |
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CRCW25128R20JNEGHP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 8.2Ω; 1.5W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 8.2Ω Power: 1.5W Tolerance: ±5% Max. operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C |
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| IRFI9Z14GPBF | VISHAY |
 Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -5.3A; Idm: -21A; 27W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.3A Pulsed drain current: -21A Power dissipation: 27W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.5Ω Mounting: THT Gate charge: 12nC Kind of package: tube Kind of channel: enhanced |
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| IRFI9Z24GPBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; 8.5A; Idm: -34A; 37W; TO220FP Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: 8.5A Pulsed drain current: -34A Power dissipation: 37W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Gate charge: 19nC Kind of package: tube Kind of channel: enhanced |
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BA679-GS08 | VISHAY |
Category: Diodes - others Description: Diode: switching; 30V; 50mA; MiniMELF; single diode; Ufmax: 1V Type of diode: switching Mounting: SMD Kind of package: reel; tape Features of semiconductor devices: PIN; RF Case: MiniMELF Max. off-state voltage: 30V Max. forward voltage: 1V Load current: 50mA Semiconductor structure: single diode |
на замовлення 2125 шт: термін постачання 21-30 дні (днів) |
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SA6.0A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 6.67÷7.37V; 48.5A; unidirectional; DO15 Type of diode: TVS Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 48.5A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 0.6mA Peak pulse power dissipation: 500W Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® |
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SA6.0A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 6.67÷7.37V; 48.5A; unidirectional; DO15 Mounting: THT Max. forward impulse current: 48.5A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 6V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 0.6mA Case: DO15 Type of diode: TVS Breakdown voltage: 6.67...7.37V |
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SA6.0CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 6.67÷7.37V; 48.5A; bidirectional; DO15; 500W; reel,tape Type of diode: TVS Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 48.5A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1.2mA Peak pulse power dissipation: 0.5kW Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® |
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SA6.0CA-E3/73 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 6.67÷7.37V; 48.5A; bidirectional; DO15; 500W; Ammo Pack Type of diode: TVS Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 48.5A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1.2mA Peak pulse power dissipation: 0.5kW Kind of package: Ammo Pack Features of semiconductor devices: glass passivated Technology: TransZorb® |
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SA6.5A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 7.22÷7.98V; 44.7A; unidirectional; DO15 Type of diode: TVS Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 44.7A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 0.4mA Peak pulse power dissipation: 500W Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® |
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SA6.5A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 7.22÷7.98V; 44.7A; unidirectional; DO15 Mounting: THT Max. forward impulse current: 44.7A Peak pulse power dissipation: 500W Technology: TransZorb® Features of semiconductor devices: glass passivated Max. off-state voltage: 6.5V Kind of package: Ammo Pack Semiconductor structure: unidirectional Leakage current: 0.4mA Case: DO15 Type of diode: TVS Breakdown voltage: 7.22...7.98V |
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SA6.5CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 7.22÷7.98V; 44.7A; bidirectional; DO15; 500W; reel,tape Type of diode: TVS Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 44.7A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 0.8mA Peak pulse power dissipation: 500W Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® |
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SA6.5CA-E3/73 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 7.22÷7.98V; 44.7A; bidirectional; DO15; 500W; Ammo Pack Type of diode: TVS Max. off-state voltage: 6.5V Breakdown voltage: 7.22...7.98V Max. forward impulse current: 44.7A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 0.8mA Peak pulse power dissipation: 500W Kind of package: Ammo Pack Features of semiconductor devices: glass passivated Technology: TransZorb® |
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SA64A-E3/54 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 71.1÷78.6V; 4.9A; unidirectional; DO15; reel,tape Type of diode: TVS Peak pulse power dissipation: 500W Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 4.9A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® |
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SA64A-E3/73 | VISHAY |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 500W; 71.1÷78.6V; 4.9A; unidirectional; DO15; Ammo Pack Type of diode: TVS Peak pulse power dissipation: 500W Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 4.9A Semiconductor structure: unidirectional Case: DO15 Mounting: THT Leakage current: 1µA Kind of package: Ammo Pack Features of semiconductor devices: glass passivated Technology: TransZorb® |
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SA64CA-E3/54 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 71.1÷78.6V; 4.9A; bidirectional; DO15; 500W; reel,tape Type of diode: TVS Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 4.9A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 500W Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® |
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SA64CA-E3/73 | VISHAY |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 71.1÷78.6V; 4.9A; bidirectional; DO15; 500W; Ammo Pack Type of diode: TVS Max. off-state voltage: 64V Breakdown voltage: 71.1...78.6V Max. forward impulse current: 4.9A Semiconductor structure: bidirectional Case: DO15 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 500W Kind of package: Ammo Pack Features of semiconductor devices: glass passivated Technology: TransZorb® |
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PR02000204703JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 470kΩ; 2W; ±5%; Ø3.9x12mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 470kΩ Power: 2W Tolerance: ±5% Max. operating voltage: 500V Body dimensions: Ø3.9x12mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
на замовлення 1850 шт: термін постачання 21-30 дні (днів) |
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PR03000204703JAC00 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 470kΩ; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 470kΩ Power: 3W Tolerance: ±5% Max. operating voltage: 750V Body dimensions: Ø5.2x19.5mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
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MAL211936101E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 100uF; 25VDC; Ø10x18mm; ±20%; 4000h Operating voltage: 25V DC Operating temperature: -55...125°C Leads: axial Service life: 4000h Capacitance: 100µF Type of capacitor: electrolytic Body dimensions: Ø10x18mm Tolerance: ±20% Mounting: THT |
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MAL211938479E3 | VISHAY |
Category: THT electrolytic capacitors Description: Capacitor: electrolytic; THT; 47uF; 63VDC; Ø10x18mm; ±20%; 4000h Operating voltage: 63V DC Operating temperature: -55...125°C Leads: axial Service life: 4000h Capacitance: 47µF Type of capacitor: electrolytic Body dimensions: Ø10x18mm Tolerance: ±20% Mounting: THT |
на замовлення 329 шт: термін постачання 21-30 дні (днів) |
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VO615A-2X016 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: DIP4 |
на замовлення 1433 шт: термін постачання 21-30 дні (днів) |
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VO615A-2X019T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 1.5kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 6µs Turn-off time: 3µs |
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VO615A-4X009T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 1.5kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 6µs Turn-off time: 3µs |
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VO615A-7X017T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 1.5kV CTR@If: 80-160%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 6µs Turn-off time: 3µs |
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VO615A-8X017T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 1.5kV CTR@If: 130-260%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 6µs Turn-off time: 3µs |
на замовлення 69 шт: термін постачання 21-30 дні (днів) |
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VJ1812A221KXGAT | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 220pF; 1kV; C0G (NP0); ±10%; SMD; 1812 Type of capacitor: ceramic Capacitance: 220pF Operating voltage: 1kV Dielectric: C0G (NP0) Tolerance: ±10% Mounting: SMD Case - inch: 1812 Case - mm: 4532 Operating temperature: -55...125°C |
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| GSC00BM4701HTNL | VISHAY |
Category: SMD electrolytic capacitors Description: Capacitor: electrolytic; SMD; 47uF; 50VDC; ±20%; -55÷105°C; 2000h Type of capacitor: electrolytic Mounting: SMD Capacitance: 47µF Operating voltage: 50V DC Tolerance: ±20% Operating temperature: -55...105°C Capacitors series: GSC Nominal life: 2000h Dimensions: 6.3x7.7mm Height: 7.7mm |
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SMBJ14D-M3/H | VISHAY |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 600W; 15.8V; 26.2A; unidirectional; SMB; reel,tape; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 14V Breakdown voltage: 15.8V Max. forward impulse current: 26.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMBJ |
на замовлення 897 шт: термін постачання 21-30 дні (днів) |
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| IRFIZ44GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 48W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 120A Power dissipation: 48W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 28mΩ Mounting: THT Gate charge: 95nC Kind of package: tube Kind of channel: enhanced |
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| IRFP448PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 180W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Pulsed drain current: 44A Power dissipation: 180W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 84nC Kind of package: tube Kind of channel: enhanced |
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TEFT4300 | VISHAY |
Category: Phototransistors Description: Phototransistor; 3mm; λp max: 925nm; 70V; 60°; λd: 875÷1000nm LED diameter: 3mm Wavelength: 875...1000nm LED lens: black with IR filter Viewing angle: 60° Type of photoelement: phototransistor Wavelength of peak sensitivity: 925nm Mounting: THT Collector-emitter voltage: 70V |
на замовлення 10558 шт: термін постачання 21-30 дні (днів) |
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VJ0805L120GXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 12pF; 50V; ±2%; SMD; 0805 Type of capacitor: ceramic Capacitance: 12pF Operating voltage: 50V Tolerance: ±2% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
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| IRF620SPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.2A Pulsed drain current: 18A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRF620STRLPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.2A Pulsed drain current: 18A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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| IRF620STRRPBF | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.2A Pulsed drain current: 18A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
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SS35-E3/57T | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMC; reel,tape Mounting: SMD Case: SMC Max. off-state voltage: 50V Max. forward voltage: 0.75V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 100A Kind of package: reel; tape Type of diode: Schottky rectifying |
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| SS35-E3/9AT | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMC; reel,tape Mounting: SMD Case: SMC Max. off-state voltage: 50V Max. forward voltage: 0.75V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 100A Kind of package: reel; tape Type of diode: Schottky rectifying |
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| SS35HE3_B/H | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMC; reel,tape Mounting: SMD Application: automotive industry Case: SMC Max. off-state voltage: 50V Max. forward voltage: 0.75V Load current: 3A Semiconductor structure: single diode Max. forward impulse current: 100A Kind of package: reel; tape Type of diode: Schottky rectifying |
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PR02000207509JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 75Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 75Ω Power: 2W Tolerance: ±5% Max. operating voltage: 500V Body dimensions: Ø3.9x12mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
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PR02000207501JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 7.5kΩ; 2W; ±5%; Ø3.9x12mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 7.5kΩ Power: 2W Tolerance: ±5% Max. operating voltage: 500V Body dimensions: Ø3.9x12mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
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PR02000207500JA100 | VISHAY |
Category: THT Resistors Description: Resistor: power metal; THT; 750Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C Type of resistor: power metal Mounting: THT Resistance: 750Ω Power: 2W Tolerance: ±5% Max. operating voltage: 500V Body dimensions: Ø3.9x12mm Resistor features: high power and small dimension Temperature coefficient: 250ppm/°C Leads: axial |
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MRS16000C2703FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 270kΩ; 400mW; ±1%; Ø1.6x3.6mm; -55÷155°C Type of resistor: thin film Mounting: THT Resistance: 270kΩ Tolerance: ±1% Power: 0.4W Operating temperature: -55...155°C Max. operating voltage: 200V Body dimensions: Ø1.6x3.6mm Temperature coefficient: 50ppm/°C Leads dimensions: Ø0.5x29mm |
на замовлення 190 шт: термін постачання 21-30 дні (днів) |
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MRS16000C3001FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 3kΩ; 400mW; ±1%; Ø1.6x3.6mm; -55÷155°C Type of resistor: thin film Mounting: THT Resistance: 3kΩ Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.6x3.6mm Leads dimensions: Ø0.5x29mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
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MRS16000C3003FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 300kΩ; 400mW; ±1%; Ø1.6x3.6mm; -55÷155°C Type of resistor: thin film Mounting: THT Resistance: 300kΩ Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.6x3.6mm Leads dimensions: Ø0.5x29mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
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MRS16000C3301FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 3.3kΩ; 400mW; ±1%; Ø1.6x3.6mm; -55÷155°C Type of resistor: thin film Mounting: THT Resistance: 3.3kΩ Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Body dimensions: Ø1.6x3.6mm Leads dimensions: Ø0.5x29mm Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C |
товар відсутній |
| ZSC00AG4702AARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 47uF; 100VDC; Ø10x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 47µF
Operating voltage: 100V DC
Body dimensions: Ø10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 47uF; 100VDC; Ø10x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 47µF
Operating voltage: 100V DC
Body dimensions: Ø10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
товар відсутній
| SIHG17N60D-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.7A; Idm: 48A; 277.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.7A
Pulsed drain current: 48A
Power dissipation: 277.8W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.7A; Idm: 48A; 277.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.7A
Pulsed drain current: 48A
Power dissipation: 277.8W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| SIHP17N60D-GE3 |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.7A; Idm: 48A; 277.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.7A
Pulsed drain current: 48A
Power dissipation: 277.8W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.7A; Idm: 48A; 277.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.7A
Pulsed drain current: 48A
Power dissipation: 277.8W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.34Ω
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| GSC00AF2211EARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 220µF
Operating voltage: 25V DC
Capacitors series: GSC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Height: 10mm
Nominal life: 2000h
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 220µF
Operating voltage: 25V DC
Capacitors series: GSC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Dimensions: 8x10mm
Height: 10mm
Nominal life: 2000h
на замовлення 850 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 17.18 грн |
| 50+ | 10.28 грн |
| 100+ | 7.8 грн |
| 140+ | 5.85 грн |
| 380+ | 5.54 грн |
| GSC00XM2211EARL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 10x7.7mm
Height: 7.7mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 10x7.7mm
Height: 7.7mm
товар відсутній
| GSC00XM2211ETFL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 10x7.7mm
Height: 7.7mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 10x7.7mm
Height: 7.7mm
товар відсутній
| SI7820DN-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 2.6A; Idm: 10A
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 2.6A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Gate charge: 18nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 2.6A; Idm: 10A
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 2.6A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Gate charge: 18nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
товар відсутній
| SI7820DN-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 2.6A; Idm: 10A
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 2.6A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Gate charge: 18nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 2.6A; Idm: 10A
Mounting: SMD
Case: PowerPAK® 1212-8
Kind of package: reel; tape
Drain-source voltage: 200V
Drain current: 2.6A
On-state resistance: 0.25Ω
Type of transistor: N-MOSFET
Power dissipation: 3.8W
Polarisation: unipolar
Gate charge: 18nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 10A
товар відсутній
| GSC00AG2211HTFL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 50VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 220µF
Operating voltage: 50V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Height: 10mm
Dimensions: 10x10mm
Nominal life: 2000h
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 50VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Capacitance: 220µF
Operating voltage: 50V DC
Mounting: SMD
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Height: 10mm
Dimensions: 10x10mm
Nominal life: 2000h
товар відсутній
| VS-36MB160A |
|
Виробник: VISHAY
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 35A; Ifsm: 475A
Case: D-34
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Max. forward impulse current: 475A
Electrical mounting: THT
Version: square
Type of bridge rectifier: single-phase
Load current: 35A
Leads: connectors FASTON
Category: Square single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1.6kV; If: 35A; Ifsm: 475A
Case: D-34
Kind of package: bulk
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.3V
Max. forward impulse current: 475A
Electrical mounting: THT
Version: square
Type of bridge rectifier: single-phase
Load current: 35A
Leads: connectors FASTON
товар відсутній
| SI1330EDL-T1-BE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A
Case: SC70; SOT323
Mounting: SMD
Gate charge: 0.6nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 0.25A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 8Ω
Pulsed drain current: 1A
Power dissipation: 0.31W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A
Case: SC70; SOT323
Mounting: SMD
Gate charge: 0.6nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 0.25A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 8Ω
Pulsed drain current: 1A
Power dissipation: 0.31W
товар відсутній
| SI1330EDL-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; 0.18W; SC70
Case: SC70
Mounting: SMD
Gate charge: 0.4nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 0.19A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 2.5Ω
Power dissipation: 0.18W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.19A; 0.18W; SC70
Case: SC70
Mounting: SMD
Gate charge: 0.4nC
Polarisation: unipolar
Features of semiconductor devices: ESD protected gate
Drain current: 0.19A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 2.5Ω
Power dissipation: 0.18W
товар відсутній
| SI1330EDL-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A
Case: SC70; SOT323
Mounting: SMD
Gate charge: 0.6nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 0.25A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 8Ω
Pulsed drain current: 1A
Power dissipation: 0.31W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 250mA; Idm: 1A
Case: SC70; SOT323
Mounting: SMD
Gate charge: 0.6nC
Polarisation: unipolar
Technology: TrenchFET®
Drain current: 0.25A
Kind of channel: enhanced
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 8Ω
Pulsed drain current: 1A
Power dissipation: 0.31W
товар відсутній
| GSC00AG4711ETNL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 470uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 470µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 10x10mm
Height: 10mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 470uF; 25VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 470µF
Operating voltage: 25V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 10x10mm
Height: 10mm
товар відсутній
| CRCW25128R20JNEG |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 8.2Ω; 1W; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 8.2Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 8.2Ω; 1W; ±5%; -55÷155°C; 200ppm/°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 8.2Ω
Power: 1W
Tolerance: ±5%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
товар відсутній
| CRCW25128R20JNEGHP |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 8.2Ω; 1.5W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 8.2Ω
Power: 1.5W
Tolerance: ±5%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 8.2Ω; 1.5W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 8.2Ω
Power: 1.5W
Tolerance: ±5%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
товар відсутній
| IRFI9Z14GPBF |
|
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.3A; Idm: -21A; 27W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5.3A; Idm: -21A; 27W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.3A
Pulsed drain current: -21A
Power dissipation: 27W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.5Ω
Mounting: THT
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFI9Z24GPBF |
|
Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 8.5A; Idm: -34A; 37W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: 8.5A
Pulsed drain current: -34A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; 8.5A; Idm: -34A; 37W; TO220FP
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: 8.5A
Pulsed drain current: -34A
Power dissipation: 37W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 19nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| BA679-GS08 |
|
Виробник: VISHAY
Category: Diodes - others
Description: Diode: switching; 30V; 50mA; MiniMELF; single diode; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Case: MiniMELF
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 50mA
Semiconductor structure: single diode
Category: Diodes - others
Description: Diode: switching; 30V; 50mA; MiniMELF; single diode; Ufmax: 1V
Type of diode: switching
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: PIN; RF
Case: MiniMELF
Max. off-state voltage: 30V
Max. forward voltage: 1V
Load current: 50mA
Semiconductor structure: single diode
на замовлення 2125 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 65+ | 6.22 грн |
| 75+ | 4.74 грн |
| 210+ | 3.87 грн |
| 575+ | 3.66 грн |
| SA6.0A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 6.67÷7.37V; 48.5A; unidirectional; DO15
Type of diode: TVS
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 48.5A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.6mA
Peak pulse power dissipation: 500W
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 6.67÷7.37V; 48.5A; unidirectional; DO15
Type of diode: TVS
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 48.5A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.6mA
Peak pulse power dissipation: 500W
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
товар відсутній
| SA6.0A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 6.67÷7.37V; 48.5A; unidirectional; DO15
Mounting: THT
Max. forward impulse current: 48.5A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 6V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 0.6mA
Case: DO15
Type of diode: TVS
Breakdown voltage: 6.67...7.37V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 6.67÷7.37V; 48.5A; unidirectional; DO15
Mounting: THT
Max. forward impulse current: 48.5A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 6V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 0.6mA
Case: DO15
Type of diode: TVS
Breakdown voltage: 6.67...7.37V
товар відсутній
| SA6.0CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 6.67÷7.37V; 48.5A; bidirectional; DO15; 500W; reel,tape
Type of diode: TVS
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 48.5A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1.2mA
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 6.67÷7.37V; 48.5A; bidirectional; DO15; 500W; reel,tape
Type of diode: TVS
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 48.5A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1.2mA
Peak pulse power dissipation: 0.5kW
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
товар відсутній
| SA6.0CA-E3/73 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 6.67÷7.37V; 48.5A; bidirectional; DO15; 500W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 48.5A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1.2mA
Peak pulse power dissipation: 0.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 6.67÷7.37V; 48.5A; bidirectional; DO15; 500W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 48.5A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1.2mA
Peak pulse power dissipation: 0.5kW
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
товар відсутній
| SA6.5A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 7.22÷7.98V; 44.7A; unidirectional; DO15
Type of diode: TVS
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 44.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.4mA
Peak pulse power dissipation: 500W
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 7.22÷7.98V; 44.7A; unidirectional; DO15
Type of diode: TVS
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 44.7A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 0.4mA
Peak pulse power dissipation: 500W
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
товар відсутній
| SA6.5A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 7.22÷7.98V; 44.7A; unidirectional; DO15
Mounting: THT
Max. forward impulse current: 44.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 6.5V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 0.4mA
Case: DO15
Type of diode: TVS
Breakdown voltage: 7.22...7.98V
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 7.22÷7.98V; 44.7A; unidirectional; DO15
Mounting: THT
Max. forward impulse current: 44.7A
Peak pulse power dissipation: 500W
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Max. off-state voltage: 6.5V
Kind of package: Ammo Pack
Semiconductor structure: unidirectional
Leakage current: 0.4mA
Case: DO15
Type of diode: TVS
Breakdown voltage: 7.22...7.98V
товар відсутній
| SA6.5CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 7.22÷7.98V; 44.7A; bidirectional; DO15; 500W; reel,tape
Type of diode: TVS
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 44.7A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 0.8mA
Peak pulse power dissipation: 500W
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 7.22÷7.98V; 44.7A; bidirectional; DO15; 500W; reel,tape
Type of diode: TVS
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 44.7A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 0.8mA
Peak pulse power dissipation: 500W
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
товар відсутній
| SA6.5CA-E3/73 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 7.22÷7.98V; 44.7A; bidirectional; DO15; 500W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 44.7A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 0.8mA
Peak pulse power dissipation: 500W
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 7.22÷7.98V; 44.7A; bidirectional; DO15; 500W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 6.5V
Breakdown voltage: 7.22...7.98V
Max. forward impulse current: 44.7A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 0.8mA
Peak pulse power dissipation: 500W
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
товар відсутній
| SA64A-E3/54 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 71.1÷78.6V; 4.9A; unidirectional; DO15; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 500W
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 71.1÷78.6V; 4.9A; unidirectional; DO15; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 500W
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
товар відсутній
| SA64A-E3/73 |
|
Виробник: VISHAY
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 71.1÷78.6V; 4.9A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 500W
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 500W; 71.1÷78.6V; 4.9A; unidirectional; DO15; Ammo Pack
Type of diode: TVS
Peak pulse power dissipation: 500W
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 4.9A
Semiconductor structure: unidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
товар відсутній
| SA64CA-E3/54 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 71.1÷78.6V; 4.9A; bidirectional; DO15; 500W; reel,tape
Type of diode: TVS
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 500W
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 71.1÷78.6V; 4.9A; bidirectional; DO15; 500W; reel,tape
Type of diode: TVS
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 500W
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
товар відсутній
| SA64CA-E3/73 |
|
Виробник: VISHAY
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 71.1÷78.6V; 4.9A; bidirectional; DO15; 500W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 500W
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 71.1÷78.6V; 4.9A; bidirectional; DO15; 500W; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 4.9A
Semiconductor structure: bidirectional
Case: DO15
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 500W
Kind of package: Ammo Pack
Features of semiconductor devices: glass passivated
Technology: TransZorb®
товар відсутній
| PR02000204703JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 470kΩ; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 470kΩ
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 470kΩ; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 470kΩ
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
на замовлення 1850 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 60+ | 7.41 грн |
| 100+ | 5.01 грн |
| 240+ | 3.43 грн |
| 650+ | 3.24 грн |
| 1000+ | 3.12 грн |
| PR03000204703JAC00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 470kΩ; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 470kΩ
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 470kΩ; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 470kΩ
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Body dimensions: Ø5.2x19.5mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
товар відсутній
| MAL211936101E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 25VDC; Ø10x18mm; ±20%; 4000h
Operating voltage: 25V DC
Operating temperature: -55...125°C
Leads: axial
Service life: 4000h
Capacitance: 100µF
Type of capacitor: electrolytic
Body dimensions: Ø10x18mm
Tolerance: ±20%
Mounting: THT
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 100uF; 25VDC; Ø10x18mm; ±20%; 4000h
Operating voltage: 25V DC
Operating temperature: -55...125°C
Leads: axial
Service life: 4000h
Capacitance: 100µF
Type of capacitor: electrolytic
Body dimensions: Ø10x18mm
Tolerance: ±20%
Mounting: THT
товар відсутній
| MAL211938479E3 |
|
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 63VDC; Ø10x18mm; ±20%; 4000h
Operating voltage: 63V DC
Operating temperature: -55...125°C
Leads: axial
Service life: 4000h
Capacitance: 47µF
Type of capacitor: electrolytic
Body dimensions: Ø10x18mm
Tolerance: ±20%
Mounting: THT
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 47uF; 63VDC; Ø10x18mm; ±20%; 4000h
Operating voltage: 63V DC
Operating temperature: -55...125°C
Leads: axial
Service life: 4000h
Capacitance: 47µF
Type of capacitor: electrolytic
Body dimensions: Ø10x18mm
Tolerance: ±20%
Mounting: THT
на замовлення 329 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 210.45 грн |
| 9+ | 93 грн |
| 24+ | 87.93 грн |
| VO615A-2X016 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP4
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP4
на замовлення 1433 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 24.71 грн |
| 36+ | 9.88 грн |
| 50+ | 8.14 грн |
| 105+ | 7.72 грн |
| 250+ | 7.16 грн |
| 1000+ | 7.02 грн |
| VO615A-2X019T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 6µs
Turn-off time: 3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 6µs
Turn-off time: 3µs
товар відсутній
| VO615A-4X009T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 6µs
Turn-off time: 3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 6µs
Turn-off time: 3µs
товар відсутній
| VO615A-7X017T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
CTR@If: 80-160%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 6µs
Turn-off time: 3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
CTR@If: 80-160%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 6µs
Turn-off time: 3µs
товар відсутній
| VO615A-8X017T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
CTR@If: 130-260%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 6µs
Turn-off time: 3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
CTR@If: 130-260%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 6µs
Turn-off time: 3µs
на замовлення 69 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 15+ | 25.09 грн |
| 29+ | 12.24 грн |
| 50+ | 9.67 грн |
| VJ1812A221KXGAT |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220pF; 1kV; C0G (NP0); ±10%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 220pF
Operating voltage: 1kV
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 220pF; 1kV; C0G (NP0); ±10%; SMD; 1812
Type of capacitor: ceramic
Capacitance: 220pF
Operating voltage: 1kV
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 1812
Case - mm: 4532
Operating temperature: -55...125°C
товар відсутній
| GSC00BM4701HTNL |
|
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 50VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 6.3x7.7mm
Height: 7.7mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 50VDC; ±20%; -55÷105°C; 2000h
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 50V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Capacitors series: GSC
Nominal life: 2000h
Dimensions: 6.3x7.7mm
Height: 7.7mm
товар відсутній
| SMBJ14D-M3/H |
|
Виробник: VISHAY
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15.8V; 26.2A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.8V
Max. forward impulse current: 26.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 600W; 15.8V; 26.2A; unidirectional; SMB; reel,tape; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 14V
Breakdown voltage: 15.8V
Max. forward impulse current: 26.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMBJ
на замовлення 897 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 29+ | 13.33 грн |
| 56+ | 6.26 грн |
| 100+ | 5.56 грн |
| 169+ | 4.78 грн |
| 463+ | 4.52 грн |
| IRFIZ44GPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 48W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 48W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 95nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| IRFP448PBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 11A; Idm: 44A; 180W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 44A
Power dissipation: 180W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 84nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| TEFT4300 |
|
Виробник: VISHAY
Category: Phototransistors
Description: Phototransistor; 3mm; λp max: 925nm; 70V; 60°; λd: 875÷1000nm
LED diameter: 3mm
Wavelength: 875...1000nm
LED lens: black with IR filter
Viewing angle: 60°
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 925nm
Mounting: THT
Collector-emitter voltage: 70V
Category: Phototransistors
Description: Phototransistor; 3mm; λp max: 925nm; 70V; 60°; λd: 875÷1000nm
LED diameter: 3mm
Wavelength: 875...1000nm
LED lens: black with IR filter
Viewing angle: 60°
Type of photoelement: phototransistor
Wavelength of peak sensitivity: 925nm
Mounting: THT
Collector-emitter voltage: 70V
на замовлення 10558 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 14+ | 29.58 грн |
| 30+ | 12.1 грн |
| 50+ | 9.94 грн |
| 94+ | 8.69 грн |
| 256+ | 8.21 грн |
| 1000+ | 8.14 грн |
| VJ0805L120GXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 12pF; 50V; ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 12pF
Operating voltage: 50V
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 12pF; 50V; ±2%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 12pF
Operating voltage: 50V
Tolerance: ±2%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товар відсутній
| IRF620SPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF620STRLPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| IRF620STRRPBF |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 18A; 50W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5.2A
Pulsed drain current: 18A
Power dissipation: 50W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SS35-E3/57T |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMC; reel,tape
Mounting: SMD
Case: SMC
Max. off-state voltage: 50V
Max. forward voltage: 0.75V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMC; reel,tape
Mounting: SMD
Case: SMC
Max. off-state voltage: 50V
Max. forward voltage: 0.75V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: Schottky rectifying
товар відсутній
| SS35-E3/9AT |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMC; reel,tape
Mounting: SMD
Case: SMC
Max. off-state voltage: 50V
Max. forward voltage: 0.75V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMC; reel,tape
Mounting: SMD
Case: SMC
Max. off-state voltage: 50V
Max. forward voltage: 0.75V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: Schottky rectifying
товар відсутній
| SS35HE3_B/H |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMC; reel,tape
Mounting: SMD
Application: automotive industry
Case: SMC
Max. off-state voltage: 50V
Max. forward voltage: 0.75V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMC; reel,tape
Mounting: SMD
Application: automotive industry
Case: SMC
Max. off-state voltage: 50V
Max. forward voltage: 0.75V
Load current: 3A
Semiconductor structure: single diode
Max. forward impulse current: 100A
Kind of package: reel; tape
Type of diode: Schottky rectifying
товар відсутній
| PR02000207509JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 75Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 75Ω
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 75Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 75Ω
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
товар відсутній
| PR02000207501JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 7.5kΩ; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 7.5kΩ
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 7.5kΩ; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 7.5kΩ
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
товар відсутній
| PR02000207500JA100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 750Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 750Ω
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
Category: THT Resistors
Description: Resistor: power metal; THT; 750Ω; 2W; ±5%; Ø3.9x12mm; 250ppm/°C
Type of resistor: power metal
Mounting: THT
Resistance: 750Ω
Power: 2W
Tolerance: ±5%
Max. operating voltage: 500V
Body dimensions: Ø3.9x12mm
Resistor features: high power and small dimension
Temperature coefficient: 250ppm/°C
Leads: axial
товар відсутній
| MRS16000C2703FCT00 |
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 270kΩ; 400mW; ±1%; Ø1.6x3.6mm; -55÷155°C
Type of resistor: thin film
Mounting: THT
Resistance: 270kΩ
Tolerance: ±1%
Power: 0.4W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Body dimensions: Ø1.6x3.6mm
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.5x29mm
Category: THT Resistors
Description: Resistor: thin film; THT; 270kΩ; 400mW; ±1%; Ø1.6x3.6mm; -55÷155°C
Type of resistor: thin film
Mounting: THT
Resistance: 270kΩ
Tolerance: ±1%
Power: 0.4W
Operating temperature: -55...155°C
Max. operating voltage: 200V
Body dimensions: Ø1.6x3.6mm
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.5x29mm
на замовлення 190 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.58 грн |
| 100+ | 5.11 грн |
| MRS16000C3001FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 3kΩ; 400mW; ±1%; Ø1.6x3.6mm; -55÷155°C
Type of resistor: thin film
Mounting: THT
Resistance: 3kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 3kΩ; 400mW; ±1%; Ø1.6x3.6mm; -55÷155°C
Type of resistor: thin film
Mounting: THT
Resistance: 3kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
товар відсутній
| MRS16000C3003FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 300kΩ; 400mW; ±1%; Ø1.6x3.6mm; -55÷155°C
Type of resistor: thin film
Mounting: THT
Resistance: 300kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 300kΩ; 400mW; ±1%; Ø1.6x3.6mm; -55÷155°C
Type of resistor: thin film
Mounting: THT
Resistance: 300kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
товар відсутній
| MRS16000C3301FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 3.3kΩ; 400mW; ±1%; Ø1.6x3.6mm; -55÷155°C
Type of resistor: thin film
Mounting: THT
Resistance: 3.3kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 3.3kΩ; 400mW; ±1%; Ø1.6x3.6mm; -55÷155°C
Type of resistor: thin film
Mounting: THT
Resistance: 3.3kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Body dimensions: Ø1.6x3.6mm
Leads dimensions: Ø0.5x29mm
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
товар відсутній