| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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S1PB-M3/84A | VISHAY |
 Category: SMD universal diodesDescription: Diode: rectifying; SMD; 100V; 1A; 1.8us; DO220AA,SMP; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 100V Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 6pF Case: DO220AA; SMP Max. forward voltage: 1.1V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape |
на замовлення 2356 шт: термін постачання 21-30 дні (днів) |
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| S1PDHM3/84A | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; DO220AA,SMP; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 6pF Case: DO220AA; SMP Max. forward voltage: 1.1V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape |
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| S1PG-M3/84A | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 400V; 1A; 1.8us; DO220AA,SMP; Ufmax: 1.1V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 0.4kV Load current: 1A Reverse recovery time: 1.8µs Semiconductor structure: single diode Features of semiconductor devices: glass passivated Capacitance: 6pF Case: DO220AA; SMP Max. forward voltage: 1.1V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape |
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ES1C-E3/5AT | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 1A; 35ns; DO214AC,SMA; Ufmax: 0.92V Mounting: SMD Case: DO214AC; SMA Max. off-state voltage: 150V Kind of package: reel; tape Max. forward voltage: 0.92V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 35ns Max. forward impulse current: 30A Leakage current: 0.1mA Capacitance: 10pF Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching |
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ES1C-E3/61T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 150V; 1A; DO214AC,SMA; Ifsm: 30A; reel,tape Mounting: SMD Max. forward impulse current: 30A Case: DO214AC; SMA Kind of package: reel; tape Type of diode: rectifying Features of semiconductor devices: glass passivated; ultrafast switching Max. off-state voltage: 150V Load current: 1A Semiconductor structure: single diode |
на замовлення 6711 шт: термін постачання 21-30 дні (днів) |
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RS1D-E3/61T | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 1A; 150ns; DO214AC; Ufmax: 1.3V Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 7pF Case: DO214AC Max. forward voltage: 1.3V Max. forward impulse current: 30A Kind of package: reel; tape |
на замовлення 5174 шт: термін постачання 21-30 дні (днів) |
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RS1DHE3_A/I | VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A Type of diode: rectifying Mounting: SMD Max. off-state voltage: 200V Load current: 1A Reverse recovery time: 150ns Semiconductor structure: single diode Features of semiconductor devices: fast switching; glass passivated Capacitance: 10pF Case: SMA Max. forward voltage: 1.3V Max. forward impulse current: 30A Leakage current: 50µA Kind of package: reel; tape |
на замовлення 7405 шт: термін постачання 21-30 дні (днів) |
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| SIA106DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A; 19W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 40A Power dissipation: 19W Gate-source voltage: ±20V On-state resistance: 22.5mΩ Mounting: SMD Gate charge: 13.5nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIA108DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 12A; Idm: 30A; 19W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Pulsed drain current: 30A Power dissipation: 19W Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIA110DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 12A; Idm: 20A; 19W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Pulsed drain current: 20A Power dissipation: 19W Gate-source voltage: ±20V On-state resistance: 72mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
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| SIA112LDJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.8A; Idm: 10A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.8A Pulsed drain current: 10A Power dissipation: 15.6W Gate-source voltage: ±20V On-state resistance: 135mΩ Mounting: SMD Gate charge: 11.8nC Kind of package: reel; tape Kind of channel: enhanced |
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SMCJ160CA-E3/57T | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 1.5kW; 178V; 5.8A; bidirectional; SMC; reel,tape; SMCJ Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 160V Breakdown voltage: 178V Max. forward impulse current: 5.8A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMCJ |
на замовлення 139 шт: термін постачання 21-30 дні (днів) |
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CRCW060322K1FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 22.1kΩ; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 22.1kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
на замовлення 23100 шт: термін постачання 21-30 дні (днів) |
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| IRFIBE20GPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; Idm: 5.6A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 1.4A Pulsed drain current: 5.6A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 6.5Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhanced |
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| VS-30CTQ045-1-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO262AA; tube; Ir: 15mA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Capacitance: 900pF Max. forward voltage: 0.76V Case: TO262AA Kind of package: tube Leakage current: 15mA Max. forward impulse current: 1.06kA |
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VS-30CTQ045-1PBF | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO262; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A x2 Max. load current: 30A Semiconductor structure: common cathode; double Max. forward voltage: 0.56V Case: TO262 Kind of package: tube Max. forward impulse current: 265A |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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VS-30CTQ045-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; tube; Ir: 15mA Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 45V Load current: 15A x2 Semiconductor structure: common cathode; double Capacitance: 900pF Max. forward voltage: 0.76V Case: TO220AB Kind of package: tube Leakage current: 15mA Max. forward impulse current: 1.06kA |
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CRCW2512220RJNEGHP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 220Ω; 1.5W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 220Ω Power: 1.5W Tolerance: ±5% Max. operating voltage: 500V Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C |
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CRCW0603165RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 165Ω; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 165Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
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RCA06034K70FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 4.7kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 4.7kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC Q200 |
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CRCW060334K0FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 34kΩ; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 34kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
на замовлення 2700 шт: термін постачання 21-30 дні (днів) |
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CRCW06034K22FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 4.22kΩ; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 4.22kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
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RCA060356K0FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 56kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 56kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC Q200 |
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VJ1206A682FXATW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 6.8nF; 50V; C0G (NP0); ±1%; SMD; 1206 Type of capacitor: ceramic Capacitance: 6.8nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
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VJ1206A682GXATW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 6.8nF; 50V; C0G (NP0); ±2%; SMD; 1206 Type of capacitor: ceramic Capacitance: 6.8nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±2% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
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VJ1206Y682KXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 6.8nF; 50V; X7R; ±10%; SMD; 1206 Type of capacitor: ceramic Capacitance: 6.8nF Operating voltage: 50V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
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BZX584C22-G3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 22V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode |
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BZX584C27-G3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 27V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 27V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode |
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BZX584C30-G3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode |
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BZX584C30-V-G-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.2W; 30V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.2W Zener voltage: 30V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode |
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BZX584C36-G3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOD523F; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 36V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD523F Semiconductor structure: single diode |
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| SUM70030E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 3.48mΩ Mounting: SMD Gate charge: 214nC Kind of package: reel; tape Kind of channel: enhanced |
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| SUM70030M-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Pulsed drain current: 500A Power dissipation: 375W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Gate charge: 214nC Kind of package: reel; tape Kind of channel: enhanced |
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| SUM70040M-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Pulsed drain current: 480A Power dissipation: 375W Case: TO263-7 Gate-source voltage: ±20V On-state resistance: 4.6mΩ Mounting: SMD Gate charge: 0.12µC Kind of package: reel; tape Kind of channel: enhanced |
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| SUM70042E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 200A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 150A Pulsed drain current: 200A Power dissipation: 278W Case: TO263 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
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| SUM70060E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 131A Pulsed drain current: 240A Power dissipation: 375W Case: TO263 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Gate charge: 81nC Kind of package: reel; tape Kind of channel: enhanced |
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| SUM70090E-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 50A Pulsed drain current: 120A Power dissipation: 125W Case: TO263 Gate-source voltage: ±20V On-state resistance: 9.3mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
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VJ1206A560JXBCW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 56pF; 100V; C0G (NP0); ±5%; SMD; 1206 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 56pF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 1206 Case - mm: 3216 Operating temperature: -55...125°C |
на замовлення 2900 шт: термін постачання 21-30 дні (днів) |
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CRCW0805604RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 604Ω; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 604Ω Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 400 шт: термін постачання 21-30 дні (днів) |
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VJ0402A560JXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 56pF; 50V; C0G (NP0); ±5%; SMD; 0402 Type of capacitor: ceramic Kind of capacitor: MLCC Capacitance: 56pF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0402 Case - mm: 1005 Operating temperature: -55...125°C |
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RCA12061R50FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 1206; 1.5Ω; 250mW; ±1%; -55÷155°C; 100ppm/°C Case - inch: 1206 Case - mm: 3216 Resistance: 1.5Ω Operating temperature: -55...155°C Tolerance: ±1% Conform to the norm: AEC Q200 Type of resistor: thick film Power: 0.25W Temperature coefficient: 100ppm/°C Max. operating voltage: 200V |
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SI2334DS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 3.9A; 1.1W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 3.9A Power dissipation: 1.1W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 44mΩ Mounting: SMD Gate charge: 3.7nC Kind of package: reel; tape Kind of channel: enhanced |
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CRCW060311K3FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 11.3kΩ; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 11.3kΩ Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
на замовлення 1600 шт: термін постачання 21-30 дні (днів) |
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CRCW0603121RFKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0603; 121Ω; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 121Ω Power: 0.1W Tolerance: ±1% Max. operating voltage: 75V Operating temperature: -55...155°C |
на замовлення 2300 шт: термін постачання 21-30 дні (днів) |
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| MRS25000C6199FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 61.9Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C Type of resistor: thin film Mounting: THT Resistance: 61.9Ω Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C |
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| T1110P6-SD-F | VISHAY |
Category: Photodiodes Description: PIN IR photodiode; SMD; 940nm; 430÷1100nm; 60°; 65mW Mounting: SMD Wavelength: 430...1100nm Viewing angle: 60° Type of photoelement: PIN IR photodiode Wavelength of peak sensitivity: 940nm Active area: 7.5mm2 Dimensions: 2.97x2.97x0.28mm Optical power: 65mW |
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| VS-85HF100 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1kV; 1.2V; 85A; cathode to stud; DO203AB; bulk Type of diode: rectifying Max. off-state voltage: 1kV Max. forward voltage: 1.2V Load current: 85A Max. load current: 133A Semiconductor structure: cathode to stud Case: DO203AB Fastening thread: 1/4"-28UNF-2A Mounting: screw type Max. forward impulse current: 1.7kA Kind of package: bulk |
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VS-85HF120 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 1.2kV; 1.2V; 85A; cathode to stud; DO203AB; bulk Type of diode: rectifying Max. off-state voltage: 1.2kV Max. forward voltage: 1.2V Load current: 85A Max. load current: 133A Semiconductor structure: cathode to stud Case: DO203AB Fastening thread: 1/4"-28UNF-2A Mounting: screw type Max. forward impulse current: 1.7kA Kind of package: bulk |
на замовлення 90 шт: термін постачання 21-30 дні (днів) |
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VS-85HF40 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 400V; 1.2V; 85A; cathode to stud; DO203AB,DO5 Type of diode: rectifying Semiconductor structure: cathode to stud Max. off-state voltage: 0.4kV Load current: 85A Case: DO5; DO203AB Max. forward voltage: 1.2V Max. forward impulse current: 1.45kA Mounting: screw type Max. load current: 133A Kind of package: bulk Manufacturer series: VS-8xHF(R) Fastening thread: 1/4"-28UNF-2A |
на замовлення 36 шт: термін постачання 21-30 дні (днів) |
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VS-85HF80 | VISHAY |
Category: Stud mounting universal diodes Description: Diode: rectifying; 800V; 1.2V; 85A; cathode to stud; DO203AB; bulk Type of diode: rectifying Max. off-state voltage: 0.8kV Max. forward voltage: 1.2V Load current: 85A Max. load current: 133A Semiconductor structure: cathode to stud Case: DO203AB Fastening thread: 1/4"-28UNF-2A Mounting: screw type Max. forward impulse current: 1.7kA Kind of package: bulk |
на замовлення 28 шт: термін постачання 21-30 дні (днів) |
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TSTS7100 | VISHAY |
Category: IR LEDs Description: IR transmitter; 4.7mm; TO18; 950nm; transparent; 7mW; 10°; THT Type of diode: IR transmitter LED diameter: 4.7mm Case: TO18 Wavelength: 950nm LED lens: transparent Optical power: 7mW Viewing angle: 10° Mounting: THT LED current: 250mA Operating voltage: 1.3...1.7V |
товар відсутній |
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| SS3P4L-M3/87A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 3A; SMPC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 3A Semiconductor structure: single diode Case: SMPC Kind of package: reel; tape Max. forward impulse current: 150A |
товар відсутній |
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| SS3P5L-M3/87A | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMPC; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 50V Load current: 3A Semiconductor structure: single diode Case: SMPC Kind of package: reel; tape Max. forward impulse current: 150A |
товар відсутній |
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TCMT1109 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 200-400%@5mA Collector-emitter voltage: 70V Case: SOP4 Turn-on time: 3µs Turn-off time: 4.7µs Manufacturer series: TCMT110. |
на замовлення 3193 шт: термін постачання 21-30 дні (днів) |
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VJ0805A122FXAAC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 1.2nF; 50V; C0G (NP0); ±1%; SMD; 0805 Type of capacitor: ceramic Capacitance: 1.2nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±1% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
товар відсутній |
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VJ0805A122KXACW1BC | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 1.2nF; 50V; C0G (NP0); ±10%; SMD; 0805 Type of capacitor: ceramic Capacitance: 1.2nF Operating voltage: 50V Dielectric: C0G (NP0) Tolerance: ±10% Mounting: SMD Case - inch: 0805 Case - mm: 2012 Operating temperature: -55...125°C |
товар відсутній |
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VJ1210Y122KXEAR | VISHAY |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; 1.2nF; 500V; X7R; ±10%; SMD; 1210 Type of capacitor: ceramic Capacitance: 1.2nF Operating voltage: 500V Dielectric: X7R Tolerance: ±10% Mounting: SMD Case - inch: 1210 Case - mm: 3225 Operating temperature: -55...125°C |
товар відсутній |
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VS-36MT120 | VISHAY |
Category: Three phase diode bridge rectifiers Description: Bridge rectifier: three-phase; Urmax: 1200V; If: 35A; Ifsm: 475A Case: D-63 Load current: 35A Kind of package: bulk Electrical mounting: THT Version: square Type of bridge rectifier: three-phase Max. off-state voltage: 1.2kV Max. forward impulse current: 475A Leads: connectors 6,3x0,8mm Max. forward voltage: 1.19V |
на замовлення 74 шт: термін постачання 21-30 дні (днів) |
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BYS11-90-E3/TR | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 90V; 1.5A; SMA; reel,tape Kind of package: reel; tape Max. off-state voltage: 90V Load current: 1.5A Semiconductor structure: single diode Case: SMA Type of diode: Schottky rectifying Mounting: SMD Max. forward impulse current: 40A Max. forward voltage: 0.75V |
на замовлення 3906 шт: термін постачання 21-30 дні (днів) |
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SMAJ48CA-E3/61 | VISHAY |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 300W; 53.3V; 5.2A; bidirectional; SMA; reel,tape; SMAJ Type of diode: TVS Peak pulse power dissipation: 0.3kW Max. off-state voltage: 48V Breakdown voltage: 53.3V Max. forward impulse current: 5.2A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Technology: TransZorb® Manufacturer series: SMAJ |
на замовлення 2310 шт: термін постачання 21-30 дні (днів) |
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| S1PB-M3/84A |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; DO220AA,SMP; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6pF
Case: DO220AA; SMP
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 100V; 1A; 1.8us; DO220AA,SMP; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 100V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6pF
Case: DO220AA; SMP
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
на замовлення 2356 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 55+ | 7.09 грн |
| 75+ | 4.84 грн |
| 225+ | 3.52 грн |
| 620+ | 3.33 грн |
| S1PDHM3/84A |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; DO220AA,SMP; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6pF
Case: DO220AA; SMP
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 1.8us; DO220AA,SMP; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6pF
Case: DO220AA; SMP
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
товар відсутній
| S1PG-M3/84A |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.8us; DO220AA,SMP; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6pF
Case: DO220AA; SMP
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 400V; 1A; 1.8us; DO220AA,SMP; Ufmax: 1.1V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 0.4kV
Load current: 1A
Reverse recovery time: 1.8µs
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Capacitance: 6pF
Case: DO220AA; SMP
Max. forward voltage: 1.1V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
товар відсутній
| ES1C-E3/5AT |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 35ns; DO214AC,SMA; Ufmax: 0.92V
Mounting: SMD
Case: DO214AC; SMA
Max. off-state voltage: 150V
Kind of package: reel; tape
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Leakage current: 0.1mA
Capacitance: 10pF
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; 35ns; DO214AC,SMA; Ufmax: 0.92V
Mounting: SMD
Case: DO214AC; SMA
Max. off-state voltage: 150V
Kind of package: reel; tape
Max. forward voltage: 0.92V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 35ns
Max. forward impulse current: 30A
Leakage current: 0.1mA
Capacitance: 10pF
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
товар відсутній
| ES1C-E3/61T |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; DO214AC,SMA; Ifsm: 30A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Case: DO214AC; SMA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 150V; 1A; DO214AC,SMA; Ifsm: 30A; reel,tape
Mounting: SMD
Max. forward impulse current: 30A
Case: DO214AC; SMA
Kind of package: reel; tape
Type of diode: rectifying
Features of semiconductor devices: glass passivated; ultrafast switching
Max. off-state voltage: 150V
Load current: 1A
Semiconductor structure: single diode
на замовлення 6711 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 24.59 грн |
| 21+ | 17.09 грн |
| 33+ | 10.52 грн |
| 100+ | 8.86 грн |
| 250+ | 8.03 грн |
| 262+ | 3.04 грн |
| 719+ | 2.91 грн |
| RS1D-E3/61T |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 1A; 150ns; DO214AC; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 7pF
Case: DO214AC
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 300V; 1A; 150ns; DO214AC; Ufmax: 1.3V
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 300V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 7pF
Case: DO214AC
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 5174 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 53+ | 7.08 грн |
| 70+ | 4.97 грн |
| 213+ | 3.81 грн |
| 583+ | 3.6 грн |
| RS1DHE3_A/I |
|
Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 150ns; SMA; Ufmax: 1.3V; Ifsm: 30A
Type of diode: rectifying
Mounting: SMD
Max. off-state voltage: 200V
Load current: 1A
Reverse recovery time: 150ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching; glass passivated
Capacitance: 10pF
Case: SMA
Max. forward voltage: 1.3V
Max. forward impulse current: 30A
Leakage current: 50µA
Kind of package: reel; tape
на замовлення 7405 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 11.83 грн |
| 90+ | 9.05 грн |
| 250+ | 8.55 грн |
| SIA106DJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 22.5mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 22.5mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIA108DJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 12A; Idm: 30A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 12A; Idm: 30A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIA110DJ-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 12A; Idm: 20A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 20A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 12A; Idm: 20A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 20A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SIA112LDJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.8A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.8A
Pulsed drain current: 10A
Power dissipation: 15.6W
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.8A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.8A
Pulsed drain current: 10A
Power dissipation: 15.6W
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SMCJ160CA-E3/57T |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 178V; 5.8A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 160V
Breakdown voltage: 178V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 1.5kW; 178V; 5.8A; bidirectional; SMC; reel,tape; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 160V
Breakdown voltage: 178V
Max. forward impulse current: 5.8A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMCJ
на замовлення 139 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 21.46 грн |
| 25+ | 17.92 грн |
| 61+ | 13.04 грн |
| CRCW060322K1FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 22.1kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 22.1kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 22.1kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 22.1kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
на замовлення 23100 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.76 грн |
| 500+ | 0.85 грн |
| 1000+ | 0.5 грн |
| 5000+ | 0.2 грн |
| IRFIBE20GPBF |
|
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; Idm: 5.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 1.4A; Idm: 5.6A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 1.4A
Pulsed drain current: 5.6A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 6.5Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
товар відсутній
| VS-30CTQ045-1-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO262AA; tube; Ir: 15mA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Capacitance: 900pF
Max. forward voltage: 0.76V
Case: TO262AA
Kind of package: tube
Leakage current: 15mA
Max. forward impulse current: 1.06kA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO262AA; tube; Ir: 15mA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Capacitance: 900pF
Max. forward voltage: 0.76V
Case: TO262AA
Kind of package: tube
Leakage current: 15mA
Max. forward impulse current: 1.06kA
товар відсутній
| VS-30CTQ045-1PBF |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO262; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Case: TO262
Kind of package: tube
Max. forward impulse current: 265A
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO262; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Max. load current: 30A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.56V
Case: TO262
Kind of package: tube
Max. forward impulse current: 265A
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 126.62 грн |
| 9+ | 96.87 грн |
| 23+ | 91.34 грн |
| VS-30CTQ045-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; tube; Ir: 15mA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Capacitance: 900pF
Max. forward voltage: 0.76V
Case: TO220AB
Kind of package: tube
Leakage current: 15mA
Max. forward impulse current: 1.06kA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 45V; 15Ax2; TO220AB; tube; Ir: 15mA
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 45V
Load current: 15A x2
Semiconductor structure: common cathode; double
Capacitance: 900pF
Max. forward voltage: 0.76V
Case: TO220AB
Kind of package: tube
Leakage current: 15mA
Max. forward impulse current: 1.06kA
товар відсутній
| CRCW2512220RJNEGHP |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 220Ω; 1.5W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 220Ω
Power: 1.5W
Tolerance: ±5%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 220Ω; 1.5W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 220Ω
Power: 1.5W
Tolerance: ±5%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
товар відсутній
| CRCW0603165RFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 165Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 165Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 165Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 165Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
товар відсутній
| RCA06034K70FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 4.7kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 4.7kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 4.7kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 4.7kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
товар відсутній
| CRCW060334K0FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 34kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 34kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 34kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 34kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
на замовлення 2700 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.67 грн |
| 500+ | 0.8 грн |
| 1000+ | 0.48 грн |
| CRCW06034K22FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 4.22kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 4.22kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 4.22kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 4.22kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.76 грн |
| 500+ | 0.85 грн |
| 1000+ | 0.5 грн |
| RCA060356K0FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 56kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 56kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0603; 56kΩ; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 56kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
товар відсутній
| VJ1206A682FXATW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 6.8nF; 50V; C0G (NP0); ±1%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 6.8nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 6.8nF; 50V; C0G (NP0); ±1%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 6.8nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товар відсутній
| VJ1206A682GXATW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 6.8nF; 50V; C0G (NP0); ±2%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 6.8nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 6.8nF; 50V; C0G (NP0); ±2%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 6.8nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±2%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товар відсутній
| VJ1206Y682KXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 6.8nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 6.8nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 6.8nF; 50V; X7R; ±10%; SMD; 1206
Type of capacitor: ceramic
Capacitance: 6.8nF
Operating voltage: 50V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
товар відсутній
| BZX584C22-G3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 22V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
товар відсутній
| BZX584C27-G3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 27V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 27V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 27V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
товар відсутній
| BZX584C30-G3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 30V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
товар відсутній
| BZX584C30-V-G-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 30V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 30V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 30V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
товар відсутній
| BZX584C36-G3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 36V; SMD; reel,tape; SOD523F; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 36V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD523F
Semiconductor structure: single diode
товар відсутній
| SUM70030E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.48mΩ
Mounting: SMD
Gate charge: 214nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 3.48mΩ
Mounting: SMD
Gate charge: 214nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SUM70030M-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 214nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 500A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 500A
Power dissipation: 375W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 214nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SUM70040M-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 375W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 120A; Idm: 480A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Pulsed drain current: 480A
Power dissipation: 375W
Case: TO263-7
Gate-source voltage: ±20V
On-state resistance: 4.6mΩ
Mounting: SMD
Gate charge: 0.12µC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SUM70042E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 200A
Power dissipation: 278W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 150A; Idm: 200A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 150A
Pulsed drain current: 200A
Power dissipation: 278W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SUM70060E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 131A
Pulsed drain current: 240A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 131A; Idm: 240A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 131A
Pulsed drain current: 240A
Power dissipation: 375W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 81nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| SUM70090E-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 120A
Power dissipation: 125W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 50A; Idm: 120A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50A
Pulsed drain current: 120A
Power dissipation: 125W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 9.3mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| VJ1206A560JXBCW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 56pF; 100V; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 56pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 56pF; 100V; C0G (NP0); ±5%; SMD; 1206
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 56pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Operating temperature: -55...125°C
на замовлення 2900 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 100+ | 6.43 грн |
| 300+ | 4.03 грн |
| 600+ | 1.53 грн |
| 1500+ | 1.44 грн |
| CRCW0805604RFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 604Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 604Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 604Ω; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 604Ω
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 400 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 200+ | 1.87 грн |
| VJ0402A560JXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 56pF; 50V; C0G (NP0); ±5%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 56pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 56pF; 50V; C0G (NP0); ±5%; SMD; 0402
Type of capacitor: ceramic
Kind of capacitor: MLCC
Capacitance: 56pF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Operating temperature: -55...125°C
товар відсутній
| RCA12061R50FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1206; 1.5Ω; 250mW; ±1%; -55÷155°C; 100ppm/°C
Case - inch: 1206
Case - mm: 3216
Resistance: 1.5Ω
Operating temperature: -55...155°C
Tolerance: ±1%
Conform to the norm: AEC Q200
Type of resistor: thick film
Power: 0.25W
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
Category: SMD resistors
Description: Resistor: thick film; 1206; 1.5Ω; 250mW; ±1%; -55÷155°C; 100ppm/°C
Case - inch: 1206
Case - mm: 3216
Resistance: 1.5Ω
Operating temperature: -55...155°C
Tolerance: ±1%
Conform to the norm: AEC Q200
Type of resistor: thick film
Power: 0.25W
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
товар відсутній
| SI2334DS-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.9A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.9A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 3.9A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 3.9A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 3.7nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
| CRCW060311K3FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 11.3kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 11.3kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 11.3kΩ; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 11.3kΩ
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
на замовлення 1600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.76 грн |
| 500+ | 0.85 грн |
| 1000+ | 0.5 грн |
| CRCW0603121RFKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 121Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 121Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 121Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 121Ω
Power: 0.1W
Tolerance: ±1%
Max. operating voltage: 75V
Operating temperature: -55...155°C
на замовлення 2300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 300+ | 1.76 грн |
| 500+ | 0.85 грн |
| 1000+ | 0.5 грн |
| MRS25000C6199FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 61.9Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 61.9Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Category: THT Resistors
Description: Resistor: thin film; THT; 61.9Ω; 600mW; ±1%; Ø2.5x6.5mm; 50ppm/°C
Type of resistor: thin film
Mounting: THT
Resistance: 61.9Ω
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
товар відсутній
| T1110P6-SD-F |
|
Виробник: VISHAY
Category: Photodiodes
Description: PIN IR photodiode; SMD; 940nm; 430÷1100nm; 60°; 65mW
Mounting: SMD
Wavelength: 430...1100nm
Viewing angle: 60°
Type of photoelement: PIN IR photodiode
Wavelength of peak sensitivity: 940nm
Active area: 7.5mm2
Dimensions: 2.97x2.97x0.28mm
Optical power: 65mW
Category: Photodiodes
Description: PIN IR photodiode; SMD; 940nm; 430÷1100nm; 60°; 65mW
Mounting: SMD
Wavelength: 430...1100nm
Viewing angle: 60°
Type of photoelement: PIN IR photodiode
Wavelength of peak sensitivity: 940nm
Active area: 7.5mm2
Dimensions: 2.97x2.97x0.28mm
Optical power: 65mW
товар відсутній
| VS-85HF100 |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.2V; 85A; cathode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.2V
Load current: 85A
Max. load current: 133A
Semiconductor structure: cathode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1.7kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1kV; 1.2V; 85A; cathode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1kV
Max. forward voltage: 1.2V
Load current: 85A
Max. load current: 133A
Semiconductor structure: cathode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1.7kA
Kind of package: bulk
товар відсутній
| VS-85HF120 |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 1.2V; 85A; cathode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.2V
Load current: 85A
Max. load current: 133A
Semiconductor structure: cathode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1.7kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 1.2kV; 1.2V; 85A; cathode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 1.2kV
Max. forward voltage: 1.2V
Load current: 85A
Max. load current: 133A
Semiconductor structure: cathode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1.7kA
Kind of package: bulk
на замовлення 90 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 767.52 грн |
| 2+ | 518.95 грн |
| 5+ | 490.58 грн |
| VS-85HF40 |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 400V; 1.2V; 85A; cathode to stud; DO203AB,DO5
Type of diode: rectifying
Semiconductor structure: cathode to stud
Max. off-state voltage: 0.4kV
Load current: 85A
Case: DO5; DO203AB
Max. forward voltage: 1.2V
Max. forward impulse current: 1.45kA
Mounting: screw type
Max. load current: 133A
Kind of package: bulk
Manufacturer series: VS-8xHF(R)
Fastening thread: 1/4"-28UNF-2A
Category: Stud mounting universal diodes
Description: Diode: rectifying; 400V; 1.2V; 85A; cathode to stud; DO203AB,DO5
Type of diode: rectifying
Semiconductor structure: cathode to stud
Max. off-state voltage: 0.4kV
Load current: 85A
Case: DO5; DO203AB
Max. forward voltage: 1.2V
Max. forward impulse current: 1.45kA
Mounting: screw type
Max. load current: 133A
Kind of package: bulk
Manufacturer series: VS-8xHF(R)
Fastening thread: 1/4"-28UNF-2A
на замовлення 36 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 728.77 грн |
| 2+ | 518.95 грн |
| 5+ | 489.89 грн |
| VS-85HF80 |
|
Виробник: VISHAY
Category: Stud mounting universal diodes
Description: Diode: rectifying; 800V; 1.2V; 85A; cathode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.2V
Load current: 85A
Max. load current: 133A
Semiconductor structure: cathode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1.7kA
Kind of package: bulk
Category: Stud mounting universal diodes
Description: Diode: rectifying; 800V; 1.2V; 85A; cathode to stud; DO203AB; bulk
Type of diode: rectifying
Max. off-state voltage: 0.8kV
Max. forward voltage: 1.2V
Load current: 85A
Max. load current: 133A
Semiconductor structure: cathode to stud
Case: DO203AB
Fastening thread: 1/4"-28UNF-2A
Mounting: screw type
Max. forward impulse current: 1.7kA
Kind of package: bulk
на замовлення 28 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 678.1 грн |
| 2+ | 519.64 грн |
| 5+ | 491.27 грн |
| TSTS7100 |
|
Виробник: VISHAY
Category: IR LEDs
Description: IR transmitter; 4.7mm; TO18; 950nm; transparent; 7mW; 10°; THT
Type of diode: IR transmitter
LED diameter: 4.7mm
Case: TO18
Wavelength: 950nm
LED lens: transparent
Optical power: 7mW
Viewing angle: 10°
Mounting: THT
LED current: 250mA
Operating voltage: 1.3...1.7V
Category: IR LEDs
Description: IR transmitter; 4.7mm; TO18; 950nm; transparent; 7mW; 10°; THT
Type of diode: IR transmitter
LED diameter: 4.7mm
Case: TO18
Wavelength: 950nm
LED lens: transparent
Optical power: 7mW
Viewing angle: 10°
Mounting: THT
LED current: 250mA
Operating voltage: 1.3...1.7V
товар відсутній
| SS3P4L-M3/87A |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 150A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 3A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 150A
товар відсутній
| SS3P5L-M3/87A |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 150A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 50V; 3A; SMPC; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 50V
Load current: 3A
Semiconductor structure: single diode
Case: SMPC
Kind of package: reel; tape
Max. forward impulse current: 150A
товар відсутній
| TCMT1109 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SOP4
Turn-on time: 3µs
Turn-off time: 4.7µs
Manufacturer series: TCMT110.
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SOP4
Turn-on time: 3µs
Turn-off time: 4.7µs
Manufacturer series: TCMT110.
на замовлення 3193 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 13+ | 29.81 грн |
| 14+ | 26.5 грн |
| 50+ | 18.96 грн |
| 69+ | 11.63 грн |
| 188+ | 10.99 грн |
| VJ0805A122FXAAC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1.2nF; 50V; C0G (NP0); ±1%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 1.2nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1.2nF; 50V; C0G (NP0); ±1%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 1.2nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±1%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товар відсутній
| VJ0805A122KXACW1BC |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1.2nF; 50V; C0G (NP0); ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 1.2nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1.2nF; 50V; C0G (NP0); ±10%; SMD; 0805
Type of capacitor: ceramic
Capacitance: 1.2nF
Operating voltage: 50V
Dielectric: C0G (NP0)
Tolerance: ±10%
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Operating temperature: -55...125°C
товар відсутній
| VJ1210Y122KXEAR |
|
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1.2nF; 500V; X7R; ±10%; SMD; 1210
Type of capacitor: ceramic
Capacitance: 1.2nF
Operating voltage: 500V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 1.2nF; 500V; X7R; ±10%; SMD; 1210
Type of capacitor: ceramic
Capacitance: 1.2nF
Operating voltage: 500V
Dielectric: X7R
Tolerance: ±10%
Mounting: SMD
Case - inch: 1210
Case - mm: 3225
Operating temperature: -55...125°C
товар відсутній
| VS-36MT120 |
|
Виробник: VISHAY
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1200V; If: 35A; Ifsm: 475A
Case: D-63
Load current: 35A
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Max. forward impulse current: 475A
Leads: connectors 6,3x0,8mm
Max. forward voltage: 1.19V
Category: Three phase diode bridge rectifiers
Description: Bridge rectifier: three-phase; Urmax: 1200V; If: 35A; Ifsm: 475A
Case: D-63
Load current: 35A
Kind of package: bulk
Electrical mounting: THT
Version: square
Type of bridge rectifier: three-phase
Max. off-state voltage: 1.2kV
Max. forward impulse current: 475A
Leads: connectors 6,3x0,8mm
Max. forward voltage: 1.19V
на замовлення 74 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 813.72 грн |
| 2+ | 571.54 грн |
| 4+ | 540.4 грн |
| BYS11-90-E3/TR |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 1.5A; SMA; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 90V
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.75V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 1.5A; SMA; reel,tape
Kind of package: reel; tape
Max. off-state voltage: 90V
Load current: 1.5A
Semiconductor structure: single diode
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Max. forward impulse current: 40A
Max. forward voltage: 0.75V
на замовлення 3906 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 16+ | 23.4 грн |
| 29+ | 12.25 грн |
| 97+ | 8.23 грн |
| 265+ | 7.75 грн |
| SMAJ48CA-E3/61 |
|
Виробник: VISHAY
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 300W; 53.3V; 5.2A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMAJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 300W; 53.3V; 5.2A; bidirectional; SMA; reel,tape; SMAJ
Type of diode: TVS
Peak pulse power dissipation: 0.3kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Manufacturer series: SMAJ
на замовлення 2310 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 35+ | 11.18 грн |
| 55+ | 6.44 грн |
| 100+ | 5.74 грн |
| 165+ | 4.96 грн |
| 445+ | 4.69 грн |