Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
BFC238342222 | VISHAY |
![]() Description: Capacitor: polypropylene; 2.2nF; 1.4kVDC; 500VAC; 17.5x11x5mm; THT Mounting: THT Terminal pitch: 15mm Tolerance: ±5% Body dimensions: 17.5x11x5mm Type of capacitor: polypropylene Leads: 2pin Capacitance: 2.2nF Operating voltage: 500V AC; 1.4kV DC Climate class: 55/110/56 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
![]() |
BFC238370222 | VISHAY |
![]() Description: Capacitor: polypropylene; 2.2nF; 2.5kVDC; 900VAC; 26x15.5x6mm; THT Mounting: THT Terminal pitch: 22.5mm Tolerance: ±5% Body dimensions: 26x15.5x6mm Type of capacitor: polypropylene Leads: 2pin Capacitance: 2.2nF Operating voltage: 900V AC; 2.5kV DC Climate class: 55/110/56 |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
BFC238370333 | VISHAY |
![]() Description: Capacitor: polypropylene; 33nF; 2.5kVDC; 900VAC; 31x23x13mm; THT Mounting: THT Terminal pitch: 27.5mm Tolerance: ±5% Body dimensions: 31x23x13mm Type of capacitor: polypropylene Leads: 2pin Capacitance: 33nF Operating voltage: 900V AC; 2.5kV DC Climate class: 55/110/56 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRL540SPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRL540STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Pulsed drain current: 110A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
![]() |
BZG05C4V7-M3-08 | VISHAY |
![]() Description: Diode: Zener; 3W; 4.7V; 45mA; SMD; 7 inch reel; SMA; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 4.7V Mounting: SMD Tolerance: ±6% Kind of package: 7 inch reel Case: SMA Semiconductor structure: single diode Quantity in set/package: 1500pcs. Manufacturer series: BZG05C-M Zener current: 45mA |
на замовлення 3940 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
![]() |
BZG05C5V1-M3-08 | VISHAY |
![]() Description: Diode: Zener; 3W; 5.1V; SMD; 7 inch reel; SMA; single diode Type of diode: Zener Power dissipation: 3W Zener voltage: 5.1V Kind of package: 7 inch reel Case: SMA Mounting: SMD Tolerance: ±6% Semiconductor structure: single diode Manufacturer series: BZG05C-M Quantity in set/package: 1500pcs. |
на замовлення 2660 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
![]() |
TS53YJ103MR10 | VISHAY |
![]() Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20% Resistance: 10kΩ Power: 0.25W Tolerance: ±20% Body dimensions: 5x5x2.7mm Operating temperature: -55...155°C IP rating: IP67 Leads: YJ Type of potentiometer: mounting Characteristics: linear Mechanical rotation angle: 270 ±10° Electrical rotation angle: 220 ±15° Torque: 1,5Ncm Track material: cermet Kind of potentiometer: single turn Mounting: SMD Temperature coefficient: 100ppm/°C Max. operating voltage: 200V |
на замовлення 634 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
![]() |
CRCW12061M00FKTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 1MΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C |
на замовлення 91200 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
![]() |
CRCW12061M00JNTABC | VISHAY |
![]() Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±5%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 1MΩ Power: 0.25W Tolerance: ±5% Operating temperature: -55...155°C Max. operating voltage: 200V |
на замовлення 19600 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
![]() |
1.5KE82CA-E3/54 | VISHAY |
![]() Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 70.1V Breakdown voltage: 82V Max. forward impulse current: 13.3A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: 13 inch reel Manufacturer series: 1.5KE Features of semiconductor devices: glass passivated Technology: TransZorb® |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
![]() |
GRC00DD1021CTNL | VISHAY |
![]() Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h Type of capacitor: electrolytic Mounting: THT Capacitance: 1mF Operating voltage: 16V DC Tolerance: ±20% Service life: 2000h Operating temperature: -40...105°C Dimensions: 10x16mm Terminal pitch: 5mm |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
IRFP21N60LPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 330W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 150nC Pulsed drain current: 84A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRFP22N60KPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 370W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Power dissipation: 370W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 150nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 88A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRFP26N60LPBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 470W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.25Ω Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 100A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
![]() |
GBU4A-E3/45 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 792 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
![]() |
GBU4A-E3/51 | VISHAY |
![]() Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat Type of bridge rectifier: single-phase Max. off-state voltage: 50V Load current: 4A Max. forward impulse current: 150A Version: flat Case: GBU Electrical mounting: THT Leads: flat pin Kind of package: in-tray Max. forward voltage: 1V Features of semiconductor devices: glass passivated |
на замовлення 396 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
IRF540STRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 110A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRF540STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 28A Power dissipation: 150W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 77mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 110A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
VJ0201G104KXJCW1BC | VISHAY |
![]() Description: Capacitor: ceramic; 100nF; 16V; X5R; ±10%; SMD; 0201 Type of capacitor: ceramic Capacitance: 0.1µF Operating voltage: 16V Dielectric: X5R Tolerance: ±10% Mounting: SMD Case - inch: 0201 Case - mm: 0603 Operating temperature: -55...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
![]() |
AC03000001007JAC00 | VISHAY |
![]() Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø0.8x25mm; Ø4.8x13mm Type of resistor: wire-wound Mounting: THT Resistance: 0.1Ω Power: 3W Tolerance: ±5% Operating temperature: -50...250°C Temperature coefficient: 80ppm/°C Resistor features: non-flammable Body dimensions: Ø4.8x13mm Leads dimensions: Ø0.8x25mm Leads: axial |
на замовлення 993 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
![]() |
GSC00AF2211VARL | VISHAY |
![]() Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 220µF Operating voltage: 35V DC Tolerance: ±20% Operating temperature: -55...105°C Manufacturer series: GSC Dimensions: 8x10mm Height: 10mm Nominal life: 2000h |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
![]() |
IRFR9220PBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
на замовлення 233 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
![]() |
IRFR9220TRPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -2.3A Power dissipation: 42W Case: DPAK; TO252 Gate-source voltage: ±20V On-state resistance: 1.5Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1670 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
![]() |
VJ0603A151JXBAC | VISHAY |
![]() Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603 Type of capacitor: ceramic Capacitance: 150pF Operating voltage: 100V Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 0603 Case - mm: 1608 Operating temperature: -55...125°C |
на замовлення 10500 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
VJ1111D100JXRAJ | VISHAY |
![]() Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111 Type of capacitor: ceramic Capacitance: 10pF Operating voltage: 1.5kV Dielectric: C0G (NP0) Tolerance: ±5% Mounting: SMD Case - inch: 1111 Case - mm: 3028 Operating temperature: -55...125°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
![]() |
BZX55C3V0-TAP | VISHAY |
![]() Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 3V Kind of package: Ammo Pack Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 19960 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
![]() |
WSL2512R3300FEA | VISHAY |
![]() Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C Type of resistor: power metal Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 0.33Ω Power: 1W Tolerance: ±1% Operating temperature: -60...170°C Temperature coefficient: 75ppm/°C |
на замовлення 1991 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
IRF510STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 20A; 43W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.6A Power dissipation: 43W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.54Ω Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 20A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
![]() |
IRF830ALPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 24nC Kind of package: tube Kind of channel: enhancement |
на замовлення 954 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
IRF830ASPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRF830ASTRLPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 74W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRF830BPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.3A Pulsed drain current: 10A Power dissipation: 104W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Gate charge: 20nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRF840ASTRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRF840BPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; Idm: 18A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.7A Pulsed drain current: 18A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRF840LCLPBF | VISHAY |
![]() ![]() Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 28A Power dissipation: 125W Case: I2PAK; TO262 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRF840LCSPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 28A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRF840STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 32A Power dissipation: 125W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRF9530STRLPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -12A Pulsed drain current: -48A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRF9530STRRPBF | VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -12A Pulsed drain current: -48A Power dissipation: 88W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 38nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRFB13N50APBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 14A Pulsed drain current: 56A Power dissipation: 250W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
ZSC00AK1021VARL | VISHAY |
![]() Description: Capacitor: electrolytic; low ESR; SMD; 1mF; 35VDC; Ø16x16.5mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 1mF Operating voltage: 35V DC Body dimensions: Ø16x16.5mm Tolerance: ±20% Operating temperature: -55...105°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
![]() |
BFC233660222 | VISHAY |
![]() Description: Capacitor: polypropylene; Y2; 2.2nF; 1kVDC; 300VAC; 4x10x12.5mm Type of capacitor: polypropylene Kind of capacitor: Y2 Capacitance: 2.2nF Tolerance: ±20% Mounting: THT Terminal pitch: 10mm Climate class: 55/105/56 Body dimensions: 4x10x12.5mm Leads dimensions: L 3.5mm Leads: 2pin Operating voltage: 300V AC; 1kV DC |
на замовлення 420 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
SISS5808DN-T1-GE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 150A Drain-source voltage: 80V Drain current: 66.6A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 65.7W Polarisation: unipolar Gate charge: 24nC Technology: TrenchFET® |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
![]() |
PR03000202203JAC00 | VISHAY |
![]() Description: Resistor: power metal; THT; 220kΩ; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C Type of resistor: power metal Resistance: 220kΩ Power: 3W Tolerance: ±5% Max. operating voltage: 750V Temperature coefficient: 250ppm/°C Resistor features: high power and small dimension Leads: axial Mounting: THT Body dimensions: Ø5.2x19.5mm |
на замовлення 352 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
![]() |
BZX85C22-TAP | VISHAY |
![]() Description: Diode: Zener; 1.3W; 22V; Ammo Pack; DO41; single diode Type of diode: Zener Power dissipation: 1.3W Zener voltage: 22V Kind of package: Ammo Pack Case: DO41 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode |
на замовлення 7484 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
![]() |
CRCW0402100KFKED | VISHAY |
![]() Description: Resistor: thick film; SMD; 0402; 100kΩ; 62.5mW; ±1%; CRCW0402 Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 100kΩ Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Manufacturer series: CRCW0402 Temperature coefficient: 100ppm/°C |
на замовлення 31004 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
![]() |
CRCW0402100KFKTDBC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0402; 100kΩ; 62.5mW; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 100kΩ Power: 62.5mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
на замовлення 206300 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
![]() |
CRCW0402100KJNTDBC | VISHAY |
![]() Description: Resistor: thick film; SMD; 0402; 100kΩ; 62.5mW; ±5%; -55÷155°C Type of resistor: thick film Case - inch: 0402 Case - mm: 1005 Resistance: 100kΩ Power: 62.5mW Tolerance: ±5% Max. operating voltage: 50V Temperature coefficient: 200ppm/°C Operating temperature: -55...155°C Mounting: SMD |
на замовлення 7300 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
IRF640PBF-BE3 | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 125W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Pulsed drain current: 72A Power dissipation: 125W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Kind of channel: enhancement Gate charge: 70nC Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IRF640STRRPBF | VISHAY |
![]() Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 130W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 18A Pulsed drain current: 72A Power dissipation: 130W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: SMD Kind of channel: enhancement Gate charge: 70nC Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
BFC233845104 | VISHAY |
![]() Description: Capacitor: polypropylene; 100nF; 630VDC; 300VAC; THT; ±10%; 15mm Mounting: THT Operating voltage: 300V AC; 630V DC Type of capacitor: polypropylene Capacitance: 0.1µF Body dimensions: 17.5x6x12mm Terminal pitch: 15mm Tolerance: ±10% |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
![]() |
CRCW06032R20FKEA | VISHAY |
![]() Description: Resistor: thick film; SMD; 0603; 2.2Ω; 0.1W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 2.2Ω Power: 0.1W Tolerance: ±1% Operating temperature: -55...155°C Max. operating voltage: 75V |
на замовлення 8079 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
GSC00AP4712AARL | VISHAY |
![]() Description: Capacitor: electrolytic; SMD; 470uF; 100VDC; ±20%; -55÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 470µF Operating voltage: 100V DC Tolerance: ±20% Operating temperature: -55...105°C Height: 21.5mm Nominal life: 2000h Dimensions: 18x21.5mm Manufacturer series: GSC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
ZSC00AP4712AARL | VISHAY |
![]() Description: Capacitor: electrolytic; low ESR; SMD; 470uF; 100VDC; Ø18x21.5mm Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 470µF Operating voltage: 100V DC Body dimensions: Ø18x21.5mm Tolerance: ±20% Operating temperature: -55...105°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
ZSC00AG6811CARL | VISHAY |
![]() Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 16VDC; Ø10x10mm; ±20% Type of capacitor: electrolytic Kind of capacitor: low ESR Mounting: SMD Capacitance: 680µF Operating voltage: 16V DC Body dimensions: Ø10x10mm Tolerance: ±20% Operating temperature: -55...105°C |
на замовлення 1840 шт: термін постачання 21-30 дні (днів) |
|
|||||||||||||||||||
![]() |
MBB02070C2200FCT00 | VISHAY |
![]() Description: Resistor: metal film; THT; 220Ω; 0.6W; ±1%; Ø0.6x28mm; Ø2.5x6.5mm Power: 0.6W Resistance: 220Ω Tolerance: ±1% Body dimensions: Ø2.5x6.5mm Leads dimensions: Ø0.6x28mm Temperature coefficient: 50ppm/°C Max. operating voltage: 350V Leads: axial Mounting: THT Operating temperature: -55...155°C Type of resistor: metal film |
на замовлення 5251 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||||
IFSC1008ABER100M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 10uH; 900mA; 359mΩ; ±20%; IFSC; 2.5x2x1.2mm Mounting: SMD Resistance: 359mΩ Tolerance: ±20% Body dimensions: 2.5x2x1.2mm Operating temperature: -55...125°C Operating current: 0.9A Inductance: 10µH Type of inductor: wire Manufacturer series: IFSC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
IFSC1008ABER1R0M01 | VISHAY |
![]() Description: Inductor: wire; SMD; 1uH; 2.65A; 37mΩ; ±20%; IFSC; 2.5x2x1.2mm Mounting: SMD Resistance: 37mΩ Tolerance: ±20% Body dimensions: 2.5x2x1.2mm Operating temperature: -55...125°C Operating current: 2.65A Inductance: 1µH Type of inductor: wire Manufacturer series: IFSC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
GSC00AP4702GARL | VISHAY |
![]() Description: Capacitor: electrolytic; SMD; 47uF; 400VDC; ±20%; -40÷105°C; GSC Type of capacitor: electrolytic Mounting: SMD Capacitance: 47µF Operating voltage: 400V DC Tolerance: ±20% Operating temperature: -40...105°C Manufacturer series: GSC Nominal life: 2000h Dimensions: 18x21.5mm Height: 21.5mm |
товару немає в наявності |
В кошику од. на суму грн. |
BFC238342222 |
![]() |
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; 1.4kVDC; 500VAC; 17.5x11x5mm; THT
Mounting: THT
Terminal pitch: 15mm
Tolerance: ±5%
Body dimensions: 17.5x11x5mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 2.2nF
Operating voltage: 500V AC; 1.4kV DC
Climate class: 55/110/56
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; 1.4kVDC; 500VAC; 17.5x11x5mm; THT
Mounting: THT
Terminal pitch: 15mm
Tolerance: ±5%
Body dimensions: 17.5x11x5mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 2.2nF
Operating voltage: 500V AC; 1.4kV DC
Climate class: 55/110/56
товару немає в наявності
В кошику
од. на суму грн.
BFC238370222 |
![]() |
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; 2.5kVDC; 900VAC; 26x15.5x6mm; THT
Mounting: THT
Terminal pitch: 22.5mm
Tolerance: ±5%
Body dimensions: 26x15.5x6mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 2.2nF
Operating voltage: 900V AC; 2.5kV DC
Climate class: 55/110/56
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 2.2nF; 2.5kVDC; 900VAC; 26x15.5x6mm; THT
Mounting: THT
Terminal pitch: 22.5mm
Tolerance: ±5%
Body dimensions: 26x15.5x6mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 2.2nF
Operating voltage: 900V AC; 2.5kV DC
Climate class: 55/110/56
на замовлення 300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 116.63 грн |
10+ | 76.26 грн |
17+ | 53.38 грн |
46+ | 50.33 грн |
BFC238370333 |
![]() |
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 33nF; 2.5kVDC; 900VAC; 31x23x13mm; THT
Mounting: THT
Terminal pitch: 27.5mm
Tolerance: ±5%
Body dimensions: 31x23x13mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 33nF
Operating voltage: 900V AC; 2.5kV DC
Climate class: 55/110/56
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 33nF; 2.5kVDC; 900VAC; 31x23x13mm; THT
Mounting: THT
Terminal pitch: 27.5mm
Tolerance: ±5%
Body dimensions: 31x23x13mm
Type of capacitor: polypropylene
Leads: 2pin
Capacitance: 33nF
Operating voltage: 900V AC; 2.5kV DC
Climate class: 55/110/56
товару немає в наявності
В кошику
од. на суму грн.
IRL540SPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRL540STRLPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Pulsed drain current: 110A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±10V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
BZG05C4V7-M3-08 |
![]() |
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 4.7V; 45mA; SMD; 7 inch reel; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: 7 inch reel
Case: SMA
Semiconductor structure: single diode
Quantity in set/package: 1500pcs.
Manufacturer series: BZG05C-M
Zener current: 45mA
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 4.7V; 45mA; SMD; 7 inch reel; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±6%
Kind of package: 7 inch reel
Case: SMA
Semiconductor structure: single diode
Quantity in set/package: 1500pcs.
Manufacturer series: BZG05C-M
Zener current: 45mA
на замовлення 3940 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
15+ | 27.43 грн |
23+ | 17.24 грн |
100+ | 11.82 грн |
115+ | 7.78 грн |
315+ | 7.40 грн |
1500+ | 7.09 грн |
BZG05C5V1-M3-08 |
![]() |
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; 7 inch reel; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Kind of package: 7 inch reel
Case: SMA
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Manufacturer series: BZG05C-M
Quantity in set/package: 1500pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 3W; 5.1V; SMD; 7 inch reel; SMA; single diode
Type of diode: Zener
Power dissipation: 3W
Zener voltage: 5.1V
Kind of package: 7 inch reel
Case: SMA
Mounting: SMD
Tolerance: ±6%
Semiconductor structure: single diode
Manufacturer series: BZG05C-M
Quantity in set/package: 1500pcs.
на замовлення 2660 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 31.21 грн |
22+ | 18.07 грн |
100+ | 12.74 грн |
115+ | 7.78 грн |
315+ | 7.32 грн |
TS53YJ103MR10 |
![]() |
Виробник: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
IP rating: IP67
Leads: YJ
Type of potentiometer: mounting
Characteristics: linear
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: single turn
Mounting: SMD
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 10kΩ; 250mW; SMD; ±20%
Resistance: 10kΩ
Power: 0.25W
Tolerance: ±20%
Body dimensions: 5x5x2.7mm
Operating temperature: -55...155°C
IP rating: IP67
Leads: YJ
Type of potentiometer: mounting
Characteristics: linear
Mechanical rotation angle: 270 ±10°
Electrical rotation angle: 220 ±15°
Torque: 1,5Ncm
Track material: cermet
Kind of potentiometer: single turn
Mounting: SMD
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
на замовлення 634 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
2+ | 229.97 грн |
10+ | 159.39 грн |
11+ | 86.18 грн |
29+ | 81.60 грн |
500+ | 78.55 грн |
CRCW12061M00FKTABC |
![]() |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1MΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1MΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
на замовлення 91200 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
300+ | 1.72 грн |
600+ | 0.72 грн |
1000+ | 0.51 грн |
4100+ | 0.22 грн |
11100+ | 0.21 грн |
CRCW12061M00JNTABC |
![]() |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1MΩ
Power: 0.25W
Tolerance: ±5%
Operating temperature: -55...155°C
Max. operating voltage: 200V
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 1MΩ; 0.25W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 1MΩ
Power: 0.25W
Tolerance: ±5%
Operating temperature: -55...155°C
Max. operating voltage: 200V
на замовлення 19600 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
300+ | 1.88 грн |
600+ | 0.75 грн |
1000+ | 0.58 грн |
3400+ | 0.27 грн |
9200+ | 0.25 грн |
1.5KE82CA-E3/54 |
![]() |
Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 82V; 13.3A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 70.1V
Breakdown voltage: 82V
Max. forward impulse current: 13.3A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: 13 inch reel
Manufacturer series: 1.5KE
Features of semiconductor devices: glass passivated
Technology: TransZorb®
товару немає в наявності
В кошику
од. на суму грн.
GRC00DD1021CTNL |
![]() |
Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 10x16mm
Terminal pitch: 5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 1000uF; 16VDC; Pitch: 5mm; ±20%; 2000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 1mF
Operating voltage: 16V DC
Tolerance: ±20%
Service life: 2000h
Operating temperature: -40...105°C
Dimensions: 10x16mm
Terminal pitch: 5mm
на замовлення 67 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
12+ | 35.32 грн |
25+ | 15.48 грн |
50+ | 7.78 грн |
IRFP21N60LPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Pulsed drain current: 84A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; Idm: 84A; 330W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 330W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 150nC
Pulsed drain current: 84A
товару немає в наявності
В кошику
од. на суму грн.
IRFP22N60KPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 88A; 370W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Power dissipation: 370W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 88A
товару немає в наявності
В кошику
од. на суму грн.
IRFP26N60LPBF |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 470W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 100A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 26A; Idm: 100A; 470W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 470W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.25Ω
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 100A
товару немає в наявності
В кошику
од. на суму грн.
GBU4A-E3/45 |
![]() |
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: tube
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 792 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
6+ | 74.74 грн |
7+ | 62.54 грн |
19+ | 49.12 грн |
50+ | 46.44 грн |
GBU4A-E3/51 |
![]() |
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 50V; If: 4A; Ifsm: 150A; flat
Type of bridge rectifier: single-phase
Max. off-state voltage: 50V
Load current: 4A
Max. forward impulse current: 150A
Version: flat
Case: GBU
Electrical mounting: THT
Leads: flat pin
Kind of package: in-tray
Max. forward voltage: 1V
Features of semiconductor devices: glass passivated
на замовлення 396 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
3+ | 149.48 грн |
10+ | 103.72 грн |
20+ | 44.23 грн |
55+ | 41.95 грн |
IRF540STRLPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
товару немає в наявності
В кошику
од. на суму грн.
IRF540STRRPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 28A; Idm: 110A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 28A
Power dissipation: 150W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 77mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 110A
товару немає в наявності
В кошику
од. на суму грн.
VJ0201G104KXJCW1BC |
![]() |
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 16V; X5R; ±10%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...85°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 100nF; 16V; X5R; ±10%; SMD; 0201
Type of capacitor: ceramic
Capacitance: 0.1µF
Operating voltage: 16V
Dielectric: X5R
Tolerance: ±10%
Mounting: SMD
Case - inch: 0201
Case - mm: 0603
Operating temperature: -55...85°C
товару немає в наявності
В кошику
од. на суму грн.
AC03000001007JAC00 |
![]() |
Виробник: VISHAY
Category: Power resistors
Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø0.8x25mm; Ø4.8x13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.1Ω
Power: 3W
Tolerance: ±5%
Operating temperature: -50...250°C
Temperature coefficient: 80ppm/°C
Resistor features: non-flammable
Body dimensions: Ø4.8x13mm
Leads dimensions: Ø0.8x25mm
Leads: axial
Category: Power resistors
Description: Resistor: wire-wound; THT; 100mΩ; 3W; ±5%; Ø0.8x25mm; Ø4.8x13mm
Type of resistor: wire-wound
Mounting: THT
Resistance: 0.1Ω
Power: 3W
Tolerance: ±5%
Operating temperature: -50...250°C
Temperature coefficient: 80ppm/°C
Resistor features: non-flammable
Body dimensions: Ø4.8x13mm
Leads dimensions: Ø0.8x25mm
Leads: axial
на замовлення 993 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
10+ | 44.35 грн |
15+ | 26.77 грн |
50+ | 21.66 грн |
71+ | 12.58 грн |
195+ | 11.90 грн |
GSC00AF2211VARL |
![]() |
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Manufacturer series: GSC
Dimensions: 8x10mm
Height: 10mm
Nominal life: 2000h
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 220uF; 35VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 220µF
Operating voltage: 35V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Manufacturer series: GSC
Dimensions: 8x10mm
Height: 10mm
Nominal life: 2000h
товару немає в наявності
В кошику
од. на суму грн.
IRFR9220PBF |
![]() |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 233 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
4+ | 116.63 грн |
10+ | 49.65 грн |
31+ | 29.44 грн |
84+ | 27.84 грн |
IRFR9220TRPBF |
![]() |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -2.3A; 42W; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -2.3A
Power dissipation: 42W
Case: DPAK; TO252
Gate-source voltage: ±20V
On-state resistance: 1.5Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1670 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 82.95 грн |
10+ | 63.99 грн |
33+ | 27.07 грн |
91+ | 25.55 грн |
VJ0603A151JXBAC |
![]() |
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 150pF; 100V; C0G (NP0); ±5%; SMD; 0603
Type of capacitor: ceramic
Capacitance: 150pF
Operating voltage: 100V
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Operating temperature: -55...125°C
на замовлення 10500 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
25+ | 16.43 грн |
46+ | 8.39 грн |
60+ | 6.45 грн |
100+ | 5.80 грн |
317+ | 2.82 грн |
871+ | 2.66 грн |
VJ1111D100JXRAJ |
![]() |
Виробник: VISHAY
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 1.5kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1111
Case - mm: 3028
Operating temperature: -55...125°C
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; 10pF; 1.5kV; C0G (NP0); ±5%; SMD; 1111
Type of capacitor: ceramic
Capacitance: 10pF
Operating voltage: 1.5kV
Dielectric: C0G (NP0)
Tolerance: ±5%
Mounting: SMD
Case - inch: 1111
Case - mm: 3028
Operating temperature: -55...125°C
товару немає в наявності
В кошику
од. на суму грн.
BZX55C3V0-TAP |
![]() |
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 3V; Ammo Pack; DO35; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 3V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 19960 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
61+ | 6.78 грн |
91+ | 4.19 грн |
109+ | 3.51 грн |
163+ | 2.34 грн |
671+ | 1.33 грн |
1842+ | 1.26 грн |
WSL2512R3300FEA |
![]() |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.33Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 330mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.33Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
на замовлення 1991 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
13+ | 33.67 грн |
18+ | 21.35 грн |
20+ | 19.90 грн |
25+ | 19.52 грн |
78+ | 11.44 грн |
215+ | 10.83 грн |
IRF510STRRPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 20A; 43W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 20A; 43W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Power dissipation: 43W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.54Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
товару немає в наявності
В кошику
од. на суму грн.
IRF830ALPBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; I2PAK,TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 954 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
5+ | 85.42 грн |
10+ | 71.69 грн |
16+ | 57.96 грн |
43+ | 54.91 грн |
IRF830ASPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRF830ASTRLPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5A; Idm: 20A; 74W; D2PAK,TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 74W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRF830BPBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 10A; 104W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 10A
Power dissipation: 104W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRF840ASTRRPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRF840BPBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.7A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.7A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.7A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRF840LCLPBF | ![]() |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: I2PAK; TO262
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRF840LCSPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 28A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 28A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRF840STRRPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 125W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRF9530STRLPBF |
![]() |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRF9530STRRPBF |
![]() |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 88W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 88W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 38nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
IRFB13N50APBF |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 14A; Idm: 56A; 250W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 14A
Pulsed drain current: 56A
Power dissipation: 250W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
ZSC00AK1021VARL |
![]() |
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 1mF; 35VDC; Ø16x16.5mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 1mF
Operating voltage: 35V DC
Body dimensions: Ø16x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 1mF; 35VDC; Ø16x16.5mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 1mF
Operating voltage: 35V DC
Body dimensions: Ø16x16.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
товару немає в наявності
В кошику
од. на суму грн.
BFC233660222 |
![]() |
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; Y2; 2.2nF; 1kVDC; 300VAC; 4x10x12.5mm
Type of capacitor: polypropylene
Kind of capacitor: Y2
Capacitance: 2.2nF
Tolerance: ±20%
Mounting: THT
Terminal pitch: 10mm
Climate class: 55/105/56
Body dimensions: 4x10x12.5mm
Leads dimensions: L 3.5mm
Leads: 2pin
Operating voltage: 300V AC; 1kV DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; Y2; 2.2nF; 1kVDC; 300VAC; 4x10x12.5mm
Type of capacitor: polypropylene
Kind of capacitor: Y2
Capacitance: 2.2nF
Tolerance: ±20%
Mounting: THT
Terminal pitch: 10mm
Climate class: 55/105/56
Body dimensions: 4x10x12.5mm
Leads dimensions: L 3.5mm
Leads: 2pin
Operating voltage: 300V AC; 1kV DC
на замовлення 420 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
8+ | 56.67 грн |
10+ | 40.73 грн |
61+ | 14.95 грн |
165+ | 14.19 грн |
SISS5808DN-T1-GE3 |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 80V
Drain current: 66.6A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 24nC
Technology: TrenchFET®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 66.6A; Idm: 150A
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 150A
Drain-source voltage: 80V
Drain current: 66.6A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 65.7W
Polarisation: unipolar
Gate charge: 24nC
Technology: TrenchFET®
товару немає в наявності
В кошику
од. на суму грн.
PR03000202203JAC00 |
![]() |
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: power metal; THT; 220kΩ; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Resistance: 220kΩ
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Temperature coefficient: 250ppm/°C
Resistor features: high power and small dimension
Leads: axial
Mounting: THT
Body dimensions: Ø5.2x19.5mm
Category: THT Resistors
Description: Resistor: power metal; THT; 220kΩ; 3W; ±5%; Ø5.2x19.5mm; 250ppm/°C
Type of resistor: power metal
Resistance: 220kΩ
Power: 3W
Tolerance: ±5%
Max. operating voltage: 750V
Temperature coefficient: 250ppm/°C
Resistor features: high power and small dimension
Leads: axial
Mounting: THT
Body dimensions: Ø5.2x19.5mm
на замовлення 352 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
14+ | 29.98 грн |
23+ | 16.78 грн |
26+ | 14.72 грн |
50+ | 13.19 грн |
100+ | 11.74 грн |
143+ | 6.25 грн |
BZX85C22-TAP |
![]() |
Виробник: VISHAY
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 22V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 22V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Category: THT Zener diodes
Description: Diode: Zener; 1.3W; 22V; Ammo Pack; DO41; single diode
Type of diode: Zener
Power dissipation: 1.3W
Zener voltage: 22V
Kind of package: Ammo Pack
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
на замовлення 7484 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
28+ | 14.78 грн |
43+ | 9.08 грн |
65+ | 5.93 грн |
100+ | 5.11 грн |
302+ | 2.95 грн |
830+ | 2.80 грн |
5000+ | 2.79 грн |
CRCW0402100KFKED |
![]() |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 100kΩ; 62.5mW; ±1%; CRCW0402
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 100kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Manufacturer series: CRCW0402
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 100kΩ; 62.5mW; ±1%; CRCW0402
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 100kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Manufacturer series: CRCW0402
Temperature coefficient: 100ppm/°C
на замовлення 31004 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
56+ | 7.41 грн |
358+ | 1.07 грн |
521+ | 0.73 грн |
1000+ | 0.48 грн |
2500+ | 0.39 грн |
3157+ | 0.29 грн |
8679+ | 0.27 грн |
CRCW0402100KFKTDBC |
![]() |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 100kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 100kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 100kΩ; 62.5mW; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 100kΩ
Power: 62.5mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
на замовлення 206300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
700+ | 0.59 грн |
2100+ | 0.19 грн |
10000+ | 0.05 грн |
CRCW0402100KJNTDBC |
![]() |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 100kΩ; 62.5mW; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 100kΩ
Power: 62.5mW
Tolerance: ±5%
Max. operating voltage: 50V
Temperature coefficient: 200ppm/°C
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 100kΩ; 62.5mW; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 100kΩ
Power: 62.5mW
Tolerance: ±5%
Max. operating voltage: 50V
Temperature coefficient: 200ppm/°C
Operating temperature: -55...155°C
Mounting: SMD
на замовлення 7300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
600+ | 0.77 грн |
1300+ | 0.32 грн |
6200+ | 0.15 грн |
IRF640PBF-BE3 |
![]() |
Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 125W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 125W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: tube
товару немає в наявності
В кошику
од. на суму грн.
IRF640STRRPBF |
![]() |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 130W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: SMD
Kind of channel: enhancement
Gate charge: 70nC
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
BFC233845104 |
![]() |
Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 630VDC; 300VAC; THT; ±10%; 15mm
Mounting: THT
Operating voltage: 300V AC; 630V DC
Type of capacitor: polypropylene
Capacitance: 0.1µF
Body dimensions: 17.5x6x12mm
Terminal pitch: 15mm
Tolerance: ±10%
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 100nF; 630VDC; 300VAC; THT; ±10%; 15mm
Mounting: THT
Operating voltage: 300V AC; 630V DC
Type of capacitor: polypropylene
Capacitance: 0.1µF
Body dimensions: 17.5x6x12mm
Terminal pitch: 15mm
Tolerance: ±10%
товару немає в наявності
В кошику
од. на суму грн.
CRCW06032R20FKEA |
![]() |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 2.2Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 2.2Ω
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Max. operating voltage: 75V
Category: SMD resistors
Description: Resistor: thick film; SMD; 0603; 2.2Ω; 0.1W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 2.2Ω
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Max. operating voltage: 75V
на замовлення 8079 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
62+ | 6.64 грн |
228+ | 1.68 грн |
363+ | 1.05 грн |
435+ | 0.88 грн |
556+ | 0.69 грн |
667+ | 0.57 грн |
1000+ | 0.48 грн |
2000+ | 0.47 грн |
2041+ | 0.43 грн |
GSC00AP4712AARL |
![]() |
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 470uF; 100VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 470µF
Operating voltage: 100V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Height: 21.5mm
Nominal life: 2000h
Dimensions: 18x21.5mm
Manufacturer series: GSC
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 470uF; 100VDC; ±20%; -55÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 470µF
Operating voltage: 100V DC
Tolerance: ±20%
Operating temperature: -55...105°C
Height: 21.5mm
Nominal life: 2000h
Dimensions: 18x21.5mm
Manufacturer series: GSC
товару немає в наявності
В кошику
од. на суму грн.
ZSC00AP4712AARL |
![]() |
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 470uF; 100VDC; Ø18x21.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 470µF
Operating voltage: 100V DC
Body dimensions: Ø18x21.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 470uF; 100VDC; Ø18x21.5mm
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 470µF
Operating voltage: 100V DC
Body dimensions: Ø18x21.5mm
Tolerance: ±20%
Operating temperature: -55...105°C
товару немає в наявності
В кошику
од. на суму грн.
ZSC00AG6811CARL |
![]() |
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 16VDC; Ø10x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 16V DC
Body dimensions: Ø10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; low ESR; SMD; 680uF; 16VDC; Ø10x10mm; ±20%
Type of capacitor: electrolytic
Kind of capacitor: low ESR
Mounting: SMD
Capacitance: 680µF
Operating voltage: 16V DC
Body dimensions: Ø10x10mm
Tolerance: ±20%
Operating temperature: -55...105°C
на замовлення 1840 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
20+ | 24.39 грн |
100+ | 13.42 грн |
130+ | 7.25 грн |
340+ | 6.86 грн |
MBB02070C2200FCT00 |
![]() |
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 220Ω; 0.6W; ±1%; Ø0.6x28mm; Ø2.5x6.5mm
Power: 0.6W
Resistance: 220Ω
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads: axial
Mounting: THT
Operating temperature: -55...155°C
Type of resistor: metal film
Category: THT Resistors
Description: Resistor: metal film; THT; 220Ω; 0.6W; ±1%; Ø0.6x28mm; Ø2.5x6.5mm
Power: 0.6W
Resistance: 220Ω
Tolerance: ±1%
Body dimensions: Ø2.5x6.5mm
Leads dimensions: Ø0.6x28mm
Temperature coefficient: 50ppm/°C
Max. operating voltage: 350V
Leads: axial
Mounting: THT
Operating temperature: -55...155°C
Type of resistor: metal film
на замовлення 5251 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна |
---|---|
39+ | 10.68 грн |
63+ | 6.10 грн |
75+ | 5.09 грн |
100+ | 4.67 грн |
500+ | 3.71 грн |
593+ | 1.54 грн |
1630+ | 1.46 грн |
IFSC1008ABER100M01 |
![]() |
Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 900mA; 359mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 359mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Operating current: 0.9A
Inductance: 10µH
Type of inductor: wire
Manufacturer series: IFSC
Category: Inductors
Description: Inductor: wire; SMD; 10uH; 900mA; 359mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 359mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Operating current: 0.9A
Inductance: 10µH
Type of inductor: wire
Manufacturer series: IFSC
товару немає в наявності
В кошику
од. на суму грн.
IFSC1008ABER1R0M01 |
![]() |
Виробник: VISHAY
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 2.65A; 37mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 37mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Operating current: 2.65A
Inductance: 1µH
Type of inductor: wire
Manufacturer series: IFSC
Category: Inductors
Description: Inductor: wire; SMD; 1uH; 2.65A; 37mΩ; ±20%; IFSC; 2.5x2x1.2mm
Mounting: SMD
Resistance: 37mΩ
Tolerance: ±20%
Body dimensions: 2.5x2x1.2mm
Operating temperature: -55...125°C
Operating current: 2.65A
Inductance: 1µH
Type of inductor: wire
Manufacturer series: IFSC
товару немає в наявності
В кошику
од. на суму грн.
GSC00AP4702GARL |
![]() |
Виробник: VISHAY
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 400VDC; ±20%; -40÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 400V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Manufacturer series: GSC
Nominal life: 2000h
Dimensions: 18x21.5mm
Height: 21.5mm
Category: SMD electrolytic capacitors
Description: Capacitor: electrolytic; SMD; 47uF; 400VDC; ±20%; -40÷105°C; GSC
Type of capacitor: electrolytic
Mounting: SMD
Capacitance: 47µF
Operating voltage: 400V DC
Tolerance: ±20%
Operating temperature: -40...105°C
Manufacturer series: GSC
Nominal life: 2000h
Dimensions: 18x21.5mm
Height: 21.5mm
товару немає в наявності
В кошику
од. на суму грн.