| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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RCA12065R11FKEA | VISHAY |
 Category: SMD resistorsDescription: Resistor: thick film; 1206; 5.11Ω; 250mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 5.11Ω Power: 0.25W Tolerance: ±1% Operating temperature: -55...155°C Conform to the norm: AEC Q200 Temperature coefficient: 100ppm/°C Max. operating voltage: 200V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RCA06035R11FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 5.11Ω; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 5.11Ω Power: 0.1W Tolerance: ±1% Operating temperature: -55...155°C Conform to the norm: AEC Q200 Temperature coefficient: 100ppm/°C Max. operating voltage: 75V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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RCA06035R11FKEC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0603; 5.11Ω; 100mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0603 Case - mm: 1608 Resistance: 5.11Ω Power: 0.1W Tolerance: ±1% Operating temperature: -55...155°C Conform to the norm: AEC Q200 Temperature coefficient: 100ppm/°C Max. operating voltage: 75V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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CRCW25125R11FKEGHP | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 5.11Ω; 1.5W; ±1%; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 2512 Case - mm: 6332 Resistance: 5.11Ω Power: 1.5W Tolerance: ±1% Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Max. operating voltage: 500V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| MCT0603MF2210BP100 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 221Ω; 0.21W; ±0.1%; MCT0603; 180mm; M Type of resistor: thin film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 221Ω Power: 0.21W Tolerance: ±0.1% Manufacturer series: MCT0603 Max. operating voltage: 75V Operating temperature: -55...175°C Temperature coefficient: 10ppm/°C Conform to the norm: AEC Q200 Roll diameter max.: 180mm Version: M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCT0603MF2210BP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 221Ω; 0.21W; ±0.1%; MCT0603; 180mm; M Type of resistor: thin film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 221Ω Power: 0.21W Tolerance: ±0.1% Manufacturer series: MCT0603 Max. operating voltage: 75V Operating temperature: -55...175°C Temperature coefficient: 10ppm/°C Conform to the norm: AEC Q200 Roll diameter max.: 180mm Version: M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCT0603MF2210BPW00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 221Ω; 0.21W; ±0.1%; MCT0603; 330mm; M Type of resistor: thin film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 221Ω Power: 0.21W Tolerance: ±0.1% Manufacturer series: MCT0603 Max. operating voltage: 75V Operating temperature: -55...175°C Temperature coefficient: 10ppm/°C Conform to the norm: AEC Q200 Roll diameter max.: 330mm Version: M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCT0603MF2211BP100 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 2.21kΩ; 0.21W; ±0.1%; MCT0603; 180mm Type of resistor: thin film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 2.21kΩ Power: 0.21W Tolerance: ±0.1% Manufacturer series: MCT0603 Max. operating voltage: 75V Operating temperature: -55...175°C Temperature coefficient: 10ppm/°C Conform to the norm: AEC Q200 Roll diameter max.: 180mm Version: M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCT0603MF2211BP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 2.21kΩ; 0.21W; ±0.1%; MCT0603; 180mm Type of resistor: thin film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 2.21kΩ Power: 0.21W Tolerance: ±0.1% Manufacturer series: MCT0603 Max. operating voltage: 75V Operating temperature: -55...175°C Temperature coefficient: 10ppm/°C Conform to the norm: AEC Q200 Roll diameter max.: 180mm Version: M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCT0603MF2211BPW00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 2.21kΩ; 0.21W; ±0.1%; MCT0603; 330mm Type of resistor: thin film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 2.21kΩ Power: 0.21W Tolerance: ±0.1% Manufacturer series: MCT0603 Max. operating voltage: 75V Operating temperature: -55...175°C Temperature coefficient: 10ppm/°C Conform to the norm: AEC Q200 Roll diameter max.: 330mm Version: M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCT0603MF2212BP100 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 22.1kΩ; 0.21W; ±0.1%; MCT0603; 180mm Type of resistor: thin film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 22.1kΩ Power: 0.21W Tolerance: ±0.1% Manufacturer series: MCT0603 Max. operating voltage: 75V Operating temperature: -55...175°C Temperature coefficient: 10ppm/°C Conform to the norm: AEC Q200 Roll diameter max.: 180mm Version: M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCT0603MF2212BP500 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 22.1kΩ; 0.21W; ±0.1%; MCT0603; 180mm Type of resistor: thin film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 22.1kΩ Power: 0.21W Tolerance: ±0.1% Manufacturer series: MCT0603 Max. operating voltage: 75V Operating temperature: -55...175°C Temperature coefficient: 10ppm/°C Conform to the norm: AEC Q200 Roll diameter max.: 180mm Version: M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| MCT0603MF2212BPW00 | VISHAY |
Category: SMD resistors Description: Resistor: thin film; SMD; 0603; 22.1kΩ; 0.21W; ±0.1%; MCT0603; 330mm Type of resistor: thin film Mounting: SMD Case - inch: 0603 Case - mm: 1608 Resistance: 22.1kΩ Power: 0.21W Tolerance: ±0.1% Manufacturer series: MCT0603 Max. operating voltage: 75V Operating temperature: -55...175°C Temperature coefficient: 10ppm/°C Conform to the norm: AEC Q200 Roll diameter max.: 330mm Version: M |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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CRCW020168K0FKTDBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0201; 68kΩ; 50mW; ±1%; -55÷155°C Max. operating voltage: 30V Case - mm: 0603 Case - inch: 0201 Mounting: SMD Operating temperature: -55...155°C Type of resistor: thick film Power: 50mW Resistance: 68kΩ Tolerance: ±1% |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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VO615A | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Mounting: THT Max. off-state voltage: 6V Case: DIP4 Collector-emitter voltage: 70V Turn-on time: 3µs Turn-off time: 10µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 50-600%@5mA Conform to the norm: UL Manufacturer series: VO615A Type of optocoupler: optocoupler |
на замовлення 3434 шт: термін постачання 21-30 дні (днів) |
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VO615A-9 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 200-400%@5mA Collector-emitter voltage: 70V Case: DIP4 Conform to the norm: UL Turn-on time: 3µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: VO615A |
на замовлення 3792 шт: термін постачання 21-30 дні (днів) |
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VO615A-7X017T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V Mounting: SMD Case: Gull wing 4 Collector-emitter voltage: 70V Turn-on time: 6µs Turn-off time: 3µs Number of channels: 1 Kind of output: transistor Insulation voltage: 1.5kV CTR@If: 80-160%@10mA Type of optocoupler: optocoupler |
на замовлення 750 шт: термін постачання 21-30 дні (днів) |
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VO615A-3X019T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Mounting: SMD Max. off-state voltage: 6V Case: SMD4 Collector-emitter voltage: 70V Turn-on time: 3µs Turn-off time: 10µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 100-200%@10mA Conform to the norm: UL; VDE Manufacturer series: VO615A Type of optocoupler: optocoupler |
на замовлення 656 шт: термін постачання 21-30 дні (днів) |
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VO615A-8X017T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V Mounting: SMD Case: Gull wing 4 Collector-emitter voltage: 70V Turn-on time: 6µs Turn-off time: 3µs Number of channels: 1 Kind of output: transistor Insulation voltage: 1.5kV CTR@If: 130-260%@10mA Type of optocoupler: optocoupler |
на замовлення 19 шт: термін постачання 21-30 дні (днів) |
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VOS615A-3T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Mounting: SMD Max. off-state voltage: 6V Case: SSOP4 Collector-emitter voltage: 80V Turn-on time: 4µs Turn-off time: 18µs Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 100-200%@10mA Conform to the norm: UL Manufacturer series: VOS615A Type of optocoupler: optocoupler |
на замовлення 34 шт: термін постачання 21-30 дні (днів) |
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VOS615A-3X001T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Mounting: SMD Case: SSOP4 Collector-emitter voltage: 80V Turn-on time: 4µs Turn-off time: 18µs Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 100-200%@10mA Manufacturer series: VOS615A Type of optocoupler: optocoupler |
на замовлення 3594 шт: термін постачання 21-30 дні (днів) |
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VOS615A-X001T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V Mounting: SMD Case: SSOP4 Collector-emitter voltage: 80V Turn-on time: 4µs Turn-off time: 18µs Number of channels: 1 Kind of output: transistor Insulation voltage: 3.75kV CTR@If: 40-600%@10mA Manufacturer series: VOS615A Type of optocoupler: optocoupler |
на замовлення 1652 шт: термін постачання 21-30 дні (днів) |
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| VO615A-9X017T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 200-400%@5mA Collector-emitter voltage: 70V Case: SMD4 Conform to the norm: UL; VDE Turn-on time: 3µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: VO615A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VO615A-2X009T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Mounting: SMD Max. off-state voltage: 6V Case: SMD4 Collector-emitter voltage: 70V Turn-on time: 3µs Turn-off time: 10µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 63-125%@10mA Conform to the norm: UL Manufacturer series: VO615A Type of optocoupler: optocoupler |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VO615A-3X007T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Mounting: SMD Max. off-state voltage: 6V Case: SMD4 Collector-emitter voltage: 70V Turn-on time: 3µs Turn-off time: 10µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 100-200%@10mA Conform to the norm: UL Manufacturer series: VO615A Type of optocoupler: optocoupler |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VO615A-3X017T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Mounting: SMD Max. off-state voltage: 6V Case: SMD4 Collector-emitter voltage: 70V Turn-on time: 3µs Turn-off time: 10µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 100-200%@10mA Conform to the norm: UL; VDE Manufacturer series: VO615A Type of optocoupler: optocoupler |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VO615A-3X009T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Mounting: SMD Max. off-state voltage: 6V Case: SMD4 Collector-emitter voltage: 70V Turn-on time: 3µs Turn-off time: 10µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 100-200%@10mA Conform to the norm: UL Manufacturer series: VO615A Type of optocoupler: optocoupler |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VO615A-4X019T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: SMD4 Conform to the norm: UL; VDE Turn-on time: 3µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: VO615A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VO615A-1X009T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Mounting: SMD Max. off-state voltage: 6V Case: SMD4 Collector-emitter voltage: 70V Turn-on time: 3µs Turn-off time: 10µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 40-80%@10mA Conform to the norm: UL Manufacturer series: VO615A Type of optocoupler: optocoupler |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| VO615A-1X019T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4 Mounting: SMD Max. off-state voltage: 6V Case: SMD4 Collector-emitter voltage: 70V Turn-on time: 3µs Turn-off time: 10µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 40-80%@10mA Conform to the norm: UL; VDE Manufacturer series: VO615A Type of optocoupler: optocoupler |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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VO615A-2X019T | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V Mounting: SMD Case: Gull wing 4 Collector-emitter voltage: 70V Turn-on time: 6µs Turn-off time: 3µs Number of channels: 1 Kind of output: transistor Insulation voltage: 1.5kV CTR@If: 63-125%@10mA Type of optocoupler: optocoupler |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| VO615A-3 | VISHAY |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4 Mounting: THT Max. off-state voltage: 6V Case: DIP4 Collector-emitter voltage: 70V Turn-on time: 3µs Turn-off time: 10µs Number of channels: 1 Kind of output: transistor Insulation voltage: 5kV CTR@If: 100-200%@10mA Conform to the norm: UL Manufacturer series: VO615A Type of optocoupler: optocoupler |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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BYS10-45-E3/TR3 | VISHAY |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMA; SMD; 45V; 1.5A; 13 inch reel Type of diode: Schottky rectifying Case: SMA Mounting: SMD Max. off-state voltage: 45V Load current: 1.5A Semiconductor structure: single diode Max. forward voltage: 0.5V Max. forward impulse current: 40A Kind of package: 13 inch reel Quantity in set/package: 7500pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SI4162DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 15.4A; 3.2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 15.4A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 7.9mΩ Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2486 шт: термін постачання 21-30 дні (днів) |
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| SI4160DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25.4A; Idm: 70A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 25.4A Pulsed drain current: 70A Power dissipation: 5.7W Case: SO8 Gate-source voltage: ±20V On-state resistance: 6.3mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SI4164DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 6W Case: SO8 Drain-source voltage: 30V Drain current: 30A On-state resistance: 3.9mΩ Type of transistor: N-MOSFET Power dissipation: 6W Polarisation: unipolar Kind of package: reel; tape Gate charge: 95nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 70A Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SI4166DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30.5A; Idm: 70A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 30.5A Pulsed drain current: 70A Power dissipation: 6.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SI4168DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 70A; 5.7W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Pulsed drain current: 70A Power dissipation: 5.7W Case: SO8 Gate-source voltage: ±20V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SI4174DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 13.5A; 3.2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 13.5A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 9.5mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1717 шт: термін постачання 21-30 дні (днів) |
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SI4178DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; 5W; SO8 Case: SO8 Drain-source voltage: 30V Drain current: 6.7A On-state resistance: 33mΩ Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 12nC Kind of channel: enhancement Gate-source voltage: ±25V Mounting: SMD |
на замовлення 2459 шт: термін постачання 21-30 дні (днів) |
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SI4128DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8.7A; 3.2W; SO8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8.7A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 3.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SI4100DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 6.8A; Idm: 20A; 6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.8A Pulsed drain current: 20A Power dissipation: 6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 84mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
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| SI4100DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 6.8A; Idm: 20A; 6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.8A Pulsed drain current: 20A Power dissipation: 6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 84mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
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| SI4101DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -25.7A; Idm: -70A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -25.7A Pulsed drain current: -70A Power dissipation: 6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 203nC Kind of package: reel; tape Kind of channel: enhancement |
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| SI4103DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -16A; Idm: -80A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -16A Pulsed drain current: -80A Power dissipation: 5.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 10.8mΩ Mounting: SMD Gate charge: 0.14µC Kind of package: reel; tape Kind of channel: enhancement |
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| SI4114DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 20A; Idm: 50A; 5.7W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 20A Pulsed drain current: 50A Power dissipation: 5.7W Case: SO8 Gate-source voltage: ±16V On-state resistance: 7mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhancement |
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| SI4114DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 20A; Idm: 50A; 5.7W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 20A Pulsed drain current: 50A Power dissipation: 5.7W Case: SO8 Gate-source voltage: ±16V On-state resistance: 7mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhancement |
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| SI4116DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 18A; Idm: 50A; 5W Case: SO8 Mounting: SMD On-state resistance: 11.5mΩ Type of transistor: N-MOSFET Power dissipation: 5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 50A Drain-source voltage: 25V Drain current: 18A |
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|
|
SI4116DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 18A; Idm: 50A; 3.2W; SO8 Case: SO8 Mounting: SMD On-state resistance: 8.6mΩ Type of transistor: N-MOSFET Power dissipation: 3.2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 56nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: 50A Drain-source voltage: 25V Drain current: 18A |
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| SI4122DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 27.2A; Idm: 70A; 6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 27.2A Pulsed drain current: 70A Power dissipation: 6W Case: SO8 Gate-source voltage: ±25V On-state resistance: 6mΩ Mounting: SMD Gate charge: 95nC Kind of package: reel; tape Kind of channel: enhancement |
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| SI4124DY-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 20.5A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 20.5A Pulsed drain current: 50A Power dissipation: 5.7W Case: SO8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 77nC Kind of package: reel; tape Kind of channel: enhancement |
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| SI4124DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 20.5A; Idm: 50A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 20.5A Pulsed drain current: 50A Power dissipation: 5.7W Case: SO8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 77nC Kind of package: reel; tape Kind of channel: enhancement |
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| SI4126DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 39A; Idm: 70A; 7.8W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 39A Pulsed drain current: 70A Power dissipation: 7.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: SMD Gate charge: 105nC Kind of package: reel; tape Kind of channel: enhancement |
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| SI4136DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 46A; Idm: 70A; 7.8W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 46A Pulsed drain current: 70A Power dissipation: 7.8W Case: SO8 Gate-source voltage: ±20V On-state resistance: 2.5mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhancement |
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| SI4151DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20.5A; 5.6W; SO8 Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -20.5A Pulsed drain current: -150A Power dissipation: 5.6W Case: SO8 Gate-source voltage: ±25V On-state resistance: 13mΩ Mounting: SMD Gate charge: 87nC Kind of package: reel; tape Kind of channel: enhancement |
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| SI4153DY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -19.3A; 5.6W; SO8 Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -19.3A Pulsed drain current: -100A Power dissipation: 5.6W Case: SO8 Gate-source voltage: ±25V On-state resistance: 15mΩ Mounting: SMD Gate charge: 93nC Kind of package: reel; tape Kind of channel: enhancement |
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| SI4154DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 36A; Idm: 70A; 7.8W Mounting: SMD Case: SO8 Drain-source voltage: 40V Drain current: 36A On-state resistance: 3.9mΩ Type of transistor: N-MOSFET Power dissipation: 7.8W Polarisation: unipolar Kind of package: reel; tape Gate charge: 105nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 70A |
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| SI4156DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 70A; 6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 24A Pulsed drain current: 70A Power dissipation: 6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 42nC Kind of package: reel; tape Kind of channel: enhancement |
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| SI4186DY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35.8A; Idm: 70A; 6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 35.8A Pulsed drain current: 70A Power dissipation: 6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 90nC Kind of package: reel; tape Kind of channel: enhancement |
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| SI4190ADY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 18.4A; Idm: 70A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 18.4A Pulsed drain current: 70A Power dissipation: 6W Case: SO8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement |
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| RCA12065R11FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1206; 5.11Ω; 250mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 5.11Ω
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
Category: SMD resistors
Description: Resistor: thick film; 1206; 5.11Ω; 250mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 5.11Ω
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
Temperature coefficient: 100ppm/°C
Max. operating voltage: 200V
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| RCA06035R11FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 5.11Ω; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 5.11Ω
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
Temperature coefficient: 100ppm/°C
Max. operating voltage: 75V
Category: SMD resistors
Description: Resistor: thick film; 0603; 5.11Ω; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 5.11Ω
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
Temperature coefficient: 100ppm/°C
Max. operating voltage: 75V
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| RCA06035R11FKEC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0603; 5.11Ω; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 5.11Ω
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
Temperature coefficient: 100ppm/°C
Max. operating voltage: 75V
Category: SMD resistors
Description: Resistor: thick film; 0603; 5.11Ω; 100mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0603
Case - mm: 1608
Resistance: 5.11Ω
Power: 0.1W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC Q200
Temperature coefficient: 100ppm/°C
Max. operating voltage: 75V
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| CRCW25125R11FKEGHP |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 5.11Ω; 1.5W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 5.11Ω
Power: 1.5W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 5.11Ω; 1.5W; ±1%; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 2512
Case - mm: 6332
Resistance: 5.11Ω
Power: 1.5W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
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| MCT0603MF2210BP100 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 221Ω; 0.21W; ±0.1%; MCT0603; 180mm; M
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 221Ω
Power: 0.21W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Max. operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 10ppm/°C
Conform to the norm: AEC Q200
Roll diameter max.: 180mm
Version: M
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 221Ω; 0.21W; ±0.1%; MCT0603; 180mm; M
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 221Ω
Power: 0.21W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Max. operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 10ppm/°C
Conform to the norm: AEC Q200
Roll diameter max.: 180mm
Version: M
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| MCT0603MF2210BP500 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 221Ω; 0.21W; ±0.1%; MCT0603; 180mm; M
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 221Ω
Power: 0.21W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Max. operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 10ppm/°C
Conform to the norm: AEC Q200
Roll diameter max.: 180mm
Version: M
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 221Ω; 0.21W; ±0.1%; MCT0603; 180mm; M
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 221Ω
Power: 0.21W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Max. operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 10ppm/°C
Conform to the norm: AEC Q200
Roll diameter max.: 180mm
Version: M
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| MCT0603MF2210BPW00 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 221Ω; 0.21W; ±0.1%; MCT0603; 330mm; M
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 221Ω
Power: 0.21W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Max. operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 10ppm/°C
Conform to the norm: AEC Q200
Roll diameter max.: 330mm
Version: M
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 221Ω; 0.21W; ±0.1%; MCT0603; 330mm; M
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 221Ω
Power: 0.21W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Max. operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 10ppm/°C
Conform to the norm: AEC Q200
Roll diameter max.: 330mm
Version: M
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| MCT0603MF2211BP100 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 2.21kΩ; 0.21W; ±0.1%; MCT0603; 180mm
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 2.21kΩ
Power: 0.21W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Max. operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 10ppm/°C
Conform to the norm: AEC Q200
Roll diameter max.: 180mm
Version: M
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 2.21kΩ; 0.21W; ±0.1%; MCT0603; 180mm
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 2.21kΩ
Power: 0.21W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Max. operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 10ppm/°C
Conform to the norm: AEC Q200
Roll diameter max.: 180mm
Version: M
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| MCT0603MF2211BP500 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 2.21kΩ; 0.21W; ±0.1%; MCT0603; 180mm
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 2.21kΩ
Power: 0.21W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Max. operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 10ppm/°C
Conform to the norm: AEC Q200
Roll diameter max.: 180mm
Version: M
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 2.21kΩ; 0.21W; ±0.1%; MCT0603; 180mm
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 2.21kΩ
Power: 0.21W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Max. operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 10ppm/°C
Conform to the norm: AEC Q200
Roll diameter max.: 180mm
Version: M
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| MCT0603MF2211BPW00 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 2.21kΩ; 0.21W; ±0.1%; MCT0603; 330mm
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 2.21kΩ
Power: 0.21W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Max. operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 10ppm/°C
Conform to the norm: AEC Q200
Roll diameter max.: 330mm
Version: M
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 2.21kΩ; 0.21W; ±0.1%; MCT0603; 330mm
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 2.21kΩ
Power: 0.21W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Max. operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 10ppm/°C
Conform to the norm: AEC Q200
Roll diameter max.: 330mm
Version: M
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| MCT0603MF2212BP100 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 22.1kΩ; 0.21W; ±0.1%; MCT0603; 180mm
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 22.1kΩ
Power: 0.21W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Max. operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 10ppm/°C
Conform to the norm: AEC Q200
Roll diameter max.: 180mm
Version: M
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 22.1kΩ; 0.21W; ±0.1%; MCT0603; 180mm
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 22.1kΩ
Power: 0.21W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Max. operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 10ppm/°C
Conform to the norm: AEC Q200
Roll diameter max.: 180mm
Version: M
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| MCT0603MF2212BP500 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 22.1kΩ; 0.21W; ±0.1%; MCT0603; 180mm
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 22.1kΩ
Power: 0.21W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Max. operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 10ppm/°C
Conform to the norm: AEC Q200
Roll diameter max.: 180mm
Version: M
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 22.1kΩ; 0.21W; ±0.1%; MCT0603; 180mm
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 22.1kΩ
Power: 0.21W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Max. operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 10ppm/°C
Conform to the norm: AEC Q200
Roll diameter max.: 180mm
Version: M
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| MCT0603MF2212BPW00 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 22.1kΩ; 0.21W; ±0.1%; MCT0603; 330mm
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 22.1kΩ
Power: 0.21W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Max. operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 10ppm/°C
Conform to the norm: AEC Q200
Roll diameter max.: 330mm
Version: M
Category: SMD resistors
Description: Resistor: thin film; SMD; 0603; 22.1kΩ; 0.21W; ±0.1%; MCT0603; 330mm
Type of resistor: thin film
Mounting: SMD
Case - inch: 0603
Case - mm: 1608
Resistance: 22.1kΩ
Power: 0.21W
Tolerance: ±0.1%
Manufacturer series: MCT0603
Max. operating voltage: 75V
Operating temperature: -55...175°C
Temperature coefficient: 10ppm/°C
Conform to the norm: AEC Q200
Roll diameter max.: 330mm
Version: M
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| CRCW020168K0FKTDBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0201; 68kΩ; 50mW; ±1%; -55÷155°C
Max. operating voltage: 30V
Case - mm: 0603
Case - inch: 0201
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 50mW
Resistance: 68kΩ
Tolerance: ±1%
Category: SMD resistors
Description: Resistor: thick film; SMD; 0201; 68kΩ; 50mW; ±1%; -55÷155°C
Max. operating voltage: 30V
Case - mm: 0603
Case - inch: 0201
Mounting: SMD
Operating temperature: -55...155°C
Type of resistor: thick film
Power: 50mW
Resistance: 68kΩ
Tolerance: ±1%
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од. на суму грн.
| VO615A |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Mounting: THT
Max. off-state voltage: 6V
Case: DIP4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Conform to the norm: UL
Manufacturer series: VO615A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Mounting: THT
Max. off-state voltage: 6V
Case: DIP4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 50-600%@5mA
Conform to the norm: UL
Manufacturer series: VO615A
Type of optocoupler: optocoupler
на замовлення 3434 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 26.35 грн |
| 26+ | 15.21 грн |
| 100+ | 9.63 грн |
| 139+ | 6.57 грн |
| 382+ | 6.27 грн |
| VO615A-9 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: DIP4
Conform to the norm: UL
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
на замовлення 3792 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.17 грн |
| 23+ | 17.35 грн |
| 100+ | 10.47 грн |
| 138+ | 6.50 грн |
| 377+ | 6.12 грн |
| VO615A-7X017T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
CTR@If: 80-160%@10mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
CTR@If: 80-160%@10mA
Type of optocoupler: optocoupler
на замовлення 750 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 28.82 грн |
| 24+ | 16.28 грн |
| 50+ | 11.24 грн |
| 100+ | 9.71 грн |
| 118+ | 7.80 грн |
| 324+ | 7.34 грн |
| VO615A-3X019T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Mounting: SMD
Max. off-state voltage: 6V
Case: SMD4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Conform to the norm: UL; VDE
Manufacturer series: VO615A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Mounting: SMD
Max. off-state voltage: 6V
Case: SMD4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Conform to the norm: UL; VDE
Manufacturer series: VO615A
Type of optocoupler: optocoupler
на замовлення 656 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 35.40 грн |
| 25+ | 15.90 грн |
| 30+ | 13.07 грн |
| 100+ | 9.48 грн |
| 114+ | 8.03 грн |
| 313+ | 7.64 грн |
| VO615A-8X017T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
CTR@If: 130-260%@10mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
CTR@If: 130-260%@10mA
Type of optocoupler: optocoupler
на замовлення 19 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 31.29 грн |
| 19+ | 19.88 грн |
| VOS615A-3T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Mounting: SMD
Max. off-state voltage: 6V
Case: SSOP4
Collector-emitter voltage: 80V
Turn-on time: 4µs
Turn-off time: 18µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 100-200%@10mA
Conform to the norm: UL
Manufacturer series: VOS615A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Mounting: SMD
Max. off-state voltage: 6V
Case: SSOP4
Collector-emitter voltage: 80V
Turn-on time: 4µs
Turn-off time: 18µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 100-200%@10mA
Conform to the norm: UL
Manufacturer series: VOS615A
Type of optocoupler: optocoupler
на замовлення 34 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 46.93 грн |
| 27+ | 14.68 грн |
| 29+ | 13.53 грн |
| VOS615A-3X001T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Mounting: SMD
Case: SSOP4
Collector-emitter voltage: 80V
Turn-on time: 4µs
Turn-off time: 18µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 100-200%@10mA
Manufacturer series: VOS615A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Mounting: SMD
Case: SSOP4
Collector-emitter voltage: 80V
Turn-on time: 4µs
Turn-off time: 18µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 100-200%@10mA
Manufacturer series: VOS615A
Type of optocoupler: optocoupler
на замовлення 3594 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 35.40 грн |
| 20+ | 19.65 грн |
| 70+ | 13.07 грн |
| 193+ | 12.38 грн |
| 500+ | 11.93 грн |
| VOS615A-X001T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Mounting: SMD
Case: SSOP4
Collector-emitter voltage: 80V
Turn-on time: 4µs
Turn-off time: 18µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 40-600%@10mA
Manufacturer series: VOS615A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 3.75kV; Uce: 80V
Mounting: SMD
Case: SSOP4
Collector-emitter voltage: 80V
Turn-on time: 4µs
Turn-off time: 18µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 3.75kV
CTR@If: 40-600%@10mA
Manufacturer series: VOS615A
Type of optocoupler: optocoupler
на замовлення 1652 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 46.10 грн |
| 15+ | 26.07 грн |
| 20+ | 21.41 грн |
| 74+ | 12.46 грн |
| 203+ | 11.77 грн |
| 1000+ | 11.31 грн |
| VO615A-9X017T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SMD4
Conform to the norm: UL; VDE
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 200-400%@5mA
Collector-emitter voltage: 70V
Case: SMD4
Conform to the norm: UL; VDE
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
товару немає в наявності
В кошику
од. на суму грн.
| VO615A-2X009T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Mounting: SMD
Max. off-state voltage: 6V
Case: SMD4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 63-125%@10mA
Conform to the norm: UL
Manufacturer series: VO615A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Mounting: SMD
Max. off-state voltage: 6V
Case: SMD4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 63-125%@10mA
Conform to the norm: UL
Manufacturer series: VO615A
Type of optocoupler: optocoupler
товару немає в наявності
В кошику
од. на суму грн.
| VO615A-3X007T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Mounting: SMD
Max. off-state voltage: 6V
Case: SMD4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Conform to the norm: UL
Manufacturer series: VO615A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Mounting: SMD
Max. off-state voltage: 6V
Case: SMD4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Conform to the norm: UL
Manufacturer series: VO615A
Type of optocoupler: optocoupler
товару немає в наявності
В кошику
од. на суму грн.
| VO615A-3X017T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Mounting: SMD
Max. off-state voltage: 6V
Case: SMD4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Conform to the norm: UL; VDE
Manufacturer series: VO615A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Mounting: SMD
Max. off-state voltage: 6V
Case: SMD4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Conform to the norm: UL; VDE
Manufacturer series: VO615A
Type of optocoupler: optocoupler
товару немає в наявності
В кошику
од. на суму грн.
| VO615A-3X009T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Mounting: SMD
Max. off-state voltage: 6V
Case: SMD4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Conform to the norm: UL
Manufacturer series: VO615A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Mounting: SMD
Max. off-state voltage: 6V
Case: SMD4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Conform to the norm: UL
Manufacturer series: VO615A
Type of optocoupler: optocoupler
товару немає в наявності
В кошику
од. на суму грн.
| VO615A-4X019T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: SMD4
Conform to the norm: UL; VDE
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: SMD4
Conform to the norm: UL; VDE
Turn-on time: 3µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: VO615A
товару немає в наявності
В кошику
од. на суму грн.
| VO615A-1X009T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Mounting: SMD
Max. off-state voltage: 6V
Case: SMD4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 40-80%@10mA
Conform to the norm: UL
Manufacturer series: VO615A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Mounting: SMD
Max. off-state voltage: 6V
Case: SMD4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 40-80%@10mA
Conform to the norm: UL
Manufacturer series: VO615A
Type of optocoupler: optocoupler
товару немає в наявності
В кошику
од. на суму грн.
| VO615A-1X019T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Mounting: SMD
Max. off-state voltage: 6V
Case: SMD4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 40-80%@10mA
Conform to the norm: UL; VDE
Manufacturer series: VO615A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; SMD4
Mounting: SMD
Max. off-state voltage: 6V
Case: SMD4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 40-80%@10mA
Conform to the norm: UL; VDE
Manufacturer series: VO615A
Type of optocoupler: optocoupler
товару немає в наявності
В кошику
од. на суму грн.
| VO615A-2X019T |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
CTR@If: 63-125%@10mA
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 1.5kV; Uce: 70V
Mounting: SMD
Case: Gull wing 4
Collector-emitter voltage: 70V
Turn-on time: 6µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 1.5kV
CTR@If: 63-125%@10mA
Type of optocoupler: optocoupler
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| VO615A-3 |
|
Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Mounting: THT
Max. off-state voltage: 6V
Case: DIP4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Conform to the norm: UL
Manufacturer series: VO615A
Type of optocoupler: optocoupler
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 5kV; Uce: 70V; DIP4
Mounting: THT
Max. off-state voltage: 6V
Case: DIP4
Collector-emitter voltage: 70V
Turn-on time: 3µs
Turn-off time: 10µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5kV
CTR@If: 100-200%@10mA
Conform to the norm: UL
Manufacturer series: VO615A
Type of optocoupler: optocoupler
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| BYS10-45-E3/TR3 |
|
Виробник: VISHAY
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 45V; 1.5A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 45V; 1.5A; 13 inch reel
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 45V
Load current: 1.5A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 40A
Kind of package: 13 inch reel
Quantity in set/package: 7500pcs.
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| SI4162DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15.4A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15.4A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15.4A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15.4A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 7.9mΩ
Mounting: SMD
Gate charge: 8.8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2486 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 62.57 грн |
| 44+ | 21.02 грн |
| 120+ | 19.88 грн |
| SI4160DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25.4A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25.4A
Pulsed drain current: 70A
Power dissipation: 5.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 25.4A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 25.4A
Pulsed drain current: 70A
Power dissipation: 5.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 6.3mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI4164DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 6W
Case: SO8
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 95nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30A; Idm: 70A; 6W
Case: SO8
Drain-source voltage: 30V
Drain current: 30A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 6W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 95nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 70A
Mounting: SMD
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| SI4166DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30.5A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30.5A
Pulsed drain current: 70A
Power dissipation: 6.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 30.5A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30.5A
Pulsed drain current: 70A
Power dissipation: 6.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI4168DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 70A; 5.7W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Pulsed drain current: 70A
Power dissipation: 5.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 70A; 5.7W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Pulsed drain current: 70A
Power dissipation: 5.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI4174DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.5A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 13.5A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 13.5A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9.5mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1717 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 69.98 грн |
| 11+ | 37.61 грн |
| 25+ | 32.80 грн |
| 32+ | 28.90 грн |
| 88+ | 27.29 грн |
| 500+ | 27.06 грн |
| SI4178DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; 5W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 6.7A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.7A; 5W; SO8
Case: SO8
Drain-source voltage: 30V
Drain current: 6.7A
On-state resistance: 33mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 12nC
Kind of channel: enhancement
Gate-source voltage: ±25V
Mounting: SMD
на замовлення 2459 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.05 грн |
| 50+ | 27.52 грн |
| 52+ | 17.43 грн |
| 142+ | 16.44 грн |
| SI4128DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.7A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.7A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8.7A; 3.2W; SO8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8.7A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI4100DY-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 6.8A; Idm: 20A; 6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 6.8A; Idm: 20A; 6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI4100DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 6.8A; Idm: 20A; 6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 6.8A; Idm: 20A; 6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.8A
Pulsed drain current: 20A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 84mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI4101DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -25.7A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25.7A
Pulsed drain current: -70A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 203nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -25.7A; Idm: -70A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25.7A
Pulsed drain current: -70A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 203nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI4103DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -16A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16A
Pulsed drain current: -80A
Power dissipation: 5.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -16A; Idm: -80A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -16A
Pulsed drain current: -80A
Power dissipation: 5.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 0.14µC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI4114DY-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 20A; Idm: 50A; 5.7W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 5.7W
Case: SO8
Gate-source voltage: ±16V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 20A; Idm: 50A; 5.7W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 5.7W
Case: SO8
Gate-source voltage: ±16V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI4114DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 20A; Idm: 50A; 5.7W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 5.7W
Case: SO8
Gate-source voltage: ±16V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 20A; Idm: 50A; 5.7W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 20A
Pulsed drain current: 50A
Power dissipation: 5.7W
Case: SO8
Gate-source voltage: ±16V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI4116DY-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 18A; Idm: 50A; 5W
Case: SO8
Mounting: SMD
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 50A
Drain-source voltage: 25V
Drain current: 18A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 25V; 18A; Idm: 50A; 5W
Case: SO8
Mounting: SMD
On-state resistance: 11.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 50A
Drain-source voltage: 25V
Drain current: 18A
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| SI4116DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 18A; Idm: 50A; 3.2W; SO8
Case: SO8
Mounting: SMD
On-state resistance: 8.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 50A
Drain-source voltage: 25V
Drain current: 18A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 18A; Idm: 50A; 3.2W; SO8
Case: SO8
Mounting: SMD
On-state resistance: 8.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 56nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 50A
Drain-source voltage: 25V
Drain current: 18A
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| SI4122DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 27.2A; Idm: 70A; 6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.2A
Pulsed drain current: 70A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 27.2A; Idm: 70A; 6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.2A
Pulsed drain current: 70A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 95nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI4124DY-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 20.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20.5A
Pulsed drain current: 50A
Power dissipation: 5.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 20.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20.5A
Pulsed drain current: 50A
Power dissipation: 5.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI4124DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 20.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20.5A
Pulsed drain current: 50A
Power dissipation: 5.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 20.5A; Idm: 50A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 20.5A
Pulsed drain current: 50A
Power dissipation: 5.7W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI4126DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 39A; Idm: 70A; 7.8W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 70A
Power dissipation: 7.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 39A; Idm: 70A; 7.8W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 39A
Pulsed drain current: 70A
Power dissipation: 7.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 105nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI4136DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 46A; Idm: 70A; 7.8W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 46A
Pulsed drain current: 70A
Power dissipation: 7.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 46A; Idm: 70A; 7.8W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 46A
Pulsed drain current: 70A
Power dissipation: 7.8W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 2.5mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI4151DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20.5A; 5.6W; SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20.5A
Pulsed drain current: -150A
Power dissipation: 5.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -20.5A; 5.6W; SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20.5A
Pulsed drain current: -150A
Power dissipation: 5.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI4153DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -19.3A; 5.6W; SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -19.3A
Pulsed drain current: -100A
Power dissipation: 5.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 93nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -19.3A; 5.6W; SO8
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -19.3A
Pulsed drain current: -100A
Power dissipation: 5.6W
Case: SO8
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 93nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI4154DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 36A; Idm: 70A; 7.8W
Mounting: SMD
Case: SO8
Drain-source voltage: 40V
Drain current: 36A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 7.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 70A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 36A; Idm: 70A; 7.8W
Mounting: SMD
Case: SO8
Drain-source voltage: 40V
Drain current: 36A
On-state resistance: 3.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 7.8W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 105nC
Technology: TrenchFET®
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 70A
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| SI4156DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 70A; 6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Pulsed drain current: 70A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 24A; Idm: 70A; 6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 24A
Pulsed drain current: 70A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 42nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI4186DY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35.8A; Idm: 70A; 6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 35.8A
Pulsed drain current: 70A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 35.8A; Idm: 70A; 6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 35.8A
Pulsed drain current: 70A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 90nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI4190ADY-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 18.4A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18.4A
Pulsed drain current: 70A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 18.4A; Idm: 70A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 18.4A
Pulsed drain current: 70A
Power dissipation: 6W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
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