| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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TS53YL502MR10 | VISHAY |
Category: Single turn SMD trimmersDescription: Potentiometer: mounting; single turn; 5kΩ; 250mW; SMD; ±20%; linear Operating temperature: -55...155°C Body dimensions: 5x5x2.7mm Power: 0.25W Torque: 1.5Ncm Tolerance: ±20% Temperature coefficient: 100ppm/°C Operating voltage: 200V Electrical rotation angle: 220 ±15° Mechanical rotation angle: 270 ±10° Resistance: 5kΩ Track material: cermet IP rating: IP67 Characteristics: linear Type of potentiometer: mounting Mounting: SMD Kind of potentiometer: single turn Leads: YL |
на замовлення 1500 шт: термін постачання 21-30 дні (днів) |
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249FGJS0XB25103KA | VISHAY |
Category: Cermet single turn potentiometersDescription: Potentiometer: shaft; 10kΩ; 1W; ±10%; 6.35mm; THT; Shaft: smooth; 249 Resistance: 10kΩ Mounting: THT Operating temperature: -55...125°C Tolerance: ±10% Type of potentiometer: shaft Shaft surface: smooth Power: 1W Shaft diameter: 6.35mm Linearity tolerance: ±10% Max. operating voltage: 300V AC Temperature coefficient: 100ppm/°C Electrical rotation angle: 265° Manufacturer series: 249 Track material: cermet |
на замовлення 5 шт: термін постачання 21-30 дні (днів) |
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293D336X9010B2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 33uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 33µF Operating voltage: 10V DC Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 1411 Case - mm: 3528 Case: B Manufacturer series: Tantamount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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293D336X9010C2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 33uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 33µF Operating voltage: 10V DC Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2312 Case - mm: 6032 Case: C Manufacturer series: Tantamount |
на замовлення 994 шт: термін постачання 21-30 дні (днів) |
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293D336X9016B2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 33uF; 16VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 33µF Operating voltage: 16V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 1411 Case - mm: 3528 Case: B Manufacturer series: Tantamount |
на замовлення 2495 шт: термін постачання 21-30 дні (днів) |
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293D336X9016C2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 33uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 33µF Operating voltage: 16V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2312 Case - mm: 6032 Case: C Manufacturer series: Tantamount |
на замовлення 150 шт: термін постачання 21-30 дні (днів) |
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293D336X9016D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 33uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 33µF Operating voltage: 16V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2917 Case - mm: 7343 Case: D Manufacturer series: Tantamount |
на замовлення 1215 шт: термін постачання 21-30 дні (днів) |
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293D336X9020D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 33uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 33µF Operating voltage: 20V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2917 Case - mm: 7343 Case: D Manufacturer series: Tantamount |
на замовлення 285 шт: термін постачання 21-30 дні (днів) |
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293D336X9025D2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 33uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Capacitance: 33µF Operating voltage: 25V DC Tolerance: ±10% Operating temperature: -55...125°C Case - inch: 2917 Case - mm: 7343 Case: D Manufacturer series: Tantamount |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BAW56-E3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common anode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 0.1mA Power dissipation: 0.35W Kind of package: 7 inch reel Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
на замовлення 13820 шт: термін постачання 21-30 дні (днів) |
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BAW56-G3-08 | VISHAY |
Category: SMD universal diodesDescription: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA Type of diode: switching Mounting: SMD Max. off-state voltage: 70V Load current: 0.25A Reverse recovery time: 6ns Semiconductor structure: common anode; double Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 0.5A Leakage current: 0.1mA Power dissipation: 0.35W Kind of package: 7 inch reel Features of semiconductor devices: small signal Quantity in set/package: 3000pcs. |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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CRCW040210K0FKTDBC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0402; 10kΩ; 62.5mW; ±1%; 50V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0402 Case - mm: 1005 Resistance: 10kΩ Power: 62.5mW Tolerance: ±1% Operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C |
на замовлення 610200 шт: термін постачання 21-30 дні (днів) |
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IRLR120TRPBF | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4.9A Power dissipation: 42W Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 31A On-state resistance: 0.27Ω Gate charge: 12nC Gate-source voltage: ±10V |
на замовлення 1184 шт: термін постачання 21-30 дні (днів) |
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MAL219826681E3 | VISHAY |
Category: SNAP-IN electrolytic capacitorsDescription: Capacitor: electrolytic; SNAP-IN; 680uF; 400VDC; Ø35x60mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 680µF Operating voltage: 400V DC Body dimensions: Ø35x60mm Tolerance: ±20% Service life: 15000h Operating temperature: -40...85°C Terminal pitch: 10mm |
на замовлення 3 шт: термін постачання 21-30 дні (днів) |
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| SIHA180N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6A Pulsed drain current: 44A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHB180N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHD180N60E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 40A Power dissipation: 156W Case: DPAK; TO252 Gate-source voltage: ±30V On-state resistance: 0.195Ω Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHG080N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 22A Pulsed drain current: 96A Power dissipation: 227W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: THT Gate charge: 63nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHG180N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: TO247AC Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHH080N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Pulsed drain current: 96A Power dissipation: 184W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 80mΩ Mounting: SMD Gate charge: 63nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHH180N60E-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 114W Case: PowerPAK® 8x8L Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP180N60E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 44A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 33nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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MAL219866151E3 | VISHAY |
Category: SNAP-IN electrolytic capacitorsDescription: Capacitor: electrolytic; SNAP-IN; 150uF; 400VDC; Ø22x40mm; ±20% Type of capacitor: electrolytic Mounting: SNAP-IN Capacitance: 150µF Operating voltage: 400V DC Body dimensions: Ø22x40mm Terminal pitch: 10mm Tolerance: ±20% Service life: 15000h Operating temperature: -40...85°C |
на замовлення 46 шт: термін постачання 21-30 дні (днів) |
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WSL2512R2000FEA | VISHAY |
Category: SMD resistorsDescription: Resistor: power metal; sensing; SMD; 2512; 200mΩ; 1W; ±1%; -60÷170°C Type of resistor: power metal Kind of resistor: sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 0.2Ω Power: 1W Tolerance: ±1% Operating temperature: -60...170°C Temperature coefficient: 75ppm/°C |
на замовлення 1347 шт: термін постачання 21-30 дні (днів) |
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SMBJ5.0A-E3/52 | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.4V; 65.2A; unidirectional; SMB; TransZorb®; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Kind of package: 7 inch reel; tape Technology: TransZorb® Leakage current: 0.8mA Manufacturer series: SMBJ Features of semiconductor devices: glass passivated |
на замовлення 4035 шт: термін постачання 21-30 дні (днів) |
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SMBJ5.0A-E3/5B | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6735mV; 65.2A; unidirectional; SMB; TransZorb® Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6735mV Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: 13 inch reel; tape Manufacturer series: SMBJ Features of semiconductor devices: glass passivated Technology: TransZorb® |
на замовлення 3001 шт: термін постачання 21-30 дні (днів) |
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SMBJ5.0D-M3/H | VISHAY |
Category: Unidirectional TVS SMD diodesDescription: Diode: TVS; 600W; 6.5V; 65.9A; unidirectional; SMB; TransZorb®; SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.5V Max. forward impulse current: 65.9A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.5mA Kind of package: 7 inch reel; tape Manufacturer series: SMBJ Features of semiconductor devices: glass passivated Technology: TransZorb® |
на замовлення 2761 шт: термін постачання 21-30 дні (днів) |
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BFC233840105 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; 1uF; 630VDC; 300VAC; THT; ±20%; 22.5mm Type of capacitor: polypropylene Capacitance: 1µF Mounting: THT Tolerance: ±20% Terminal pitch: 22.5mm Body dimensions: 26x12x22mm Operating voltage: 300V AC; 630V DC |
на замовлення 280 шт: термін постачання 21-30 дні (днів) |
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BFC233910105 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±10%; 22.5mm Type of capacitor: polypropylene Capacitance: 1µF Mounting: THT Tolerance: ±10% Terminal pitch: 22.5mm Body dimensions: 26x12x22mm Operating voltage: 310V AC; 630V DC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BFC233921105 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±20%; 27.5mm Type of capacitor: polypropylene Capacitance: 1µF Mounting: THT Tolerance: ±20% Terminal pitch: 27.5mm Body dimensions: 31x11x21mm Operating voltage: 310V AC; 630V DC |
на замовлення 143 шт: термін постачання 21-30 дні (днів) |
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BFC233926105 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±20%; 22.5mm Mounting: THT Type of capacitor: polypropylene Capacitance: 1µF Terminal pitch: 22.5mm Body dimensions: 26x10x19.5mm Operating voltage: 310V AC; 630V DC Tolerance: ±20% |
на замовлення 348 шт: термін постачання 21-30 дні (днів) |
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SFH6206-3X001T | VISHAY |
Category: Optocouplers - analog outputDescription: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 5.3kV CTR@If: 100-320%@10mA Collector-emitter voltage: 70V Case: Gull wing 4 Turn-on time: 3µs Turn-off time: 2.3µs |
на замовлення 1011 шт: термін постачання 21-30 дні (днів) |
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BAT85S-TAP | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V Type of diode: Schottky switching Mounting: THT Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Features of semiconductor devices: small signal Case: DO35 Max. forward voltage: 0.8V Max. forward impulse current: 5A Kind of package: Ammo Pack Max. load current: 0.3A |
на замовлення 10907 шт: термін постачання 21-30 дні (днів) |
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BAT85S-TR | VISHAY |
Category: THT Schottky diodesDescription: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V Type of diode: Schottky switching Case: DO35 Mounting: THT Max. off-state voltage: 30V Load current: 0.2A Semiconductor structure: single diode Max. forward voltage: 0.8V Max. load current: 0.3A Max. forward impulse current: 5A Kind of package: 14 inch reel Features of semiconductor devices: small signal |
на замовлення 8860 шт: термін постачання 21-30 дні (днів) |
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MAL213651222E3 | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 2200uF; 50VDC; Ø18x35mm; Pitch: 7.5mm Type of capacitor: electrolytic Mounting: THT Capacitance: 2.2mF Operating voltage: 50V DC Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C Body dimensions: Ø18x35mm Terminal pitch: 7.5mm |
на замовлення 285 шт: термін постачання 21-30 дні (днів) |
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ZRC00KL2221H00L | VISHAY |
Category: THT electrolytic capacitorsDescription: Capacitor: electrolytic; THT; 2200uF; 50VDC; ±20%; 10000h Type of capacitor: electrolytic Mounting: THT Capacitance: 2.2mF Operating voltage: 50V DC Tolerance: ±20% Service life: 10000h Operating temperature: -55...105°C Dimensions: 18x35.5mm |
на замовлення 201 шт: термін постачання 21-30 дні (днів) |
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| SIHB12N65E-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 28A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHF12N65E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 28A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP12N65E-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Pulsed drain current: 28A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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293D226X9010A2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 22uF; 10VDC; SMD; A; 1206; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 22µF Operating voltage: 10V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 1206 Case - mm: 3216 Case: A |
на замовлення 8436 шт: термін постачання 21-30 дні (днів) |
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293D226X9010B2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 22uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C Type of capacitor: tantalum Capacitance: 22µF Operating voltage: 10V DC Mounting: SMD Tolerance: ±10% Operating temperature: -55...125°C Manufacturer series: Tantamount Case - inch: 1411 Case - mm: 3528 Case: B |
на замовлення 3903 шт: термін постачання 21-30 дні (днів) |
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IRF9520PBF | VISHAY |
Category: THT P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.8A Pulsed drain current: -27A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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IRF9520SPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.8A Pulsed drain current: -27A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
на замовлення 580 шт: термін постачання 21-30 дні (днів) |
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IRF9520STRLPBF | VISHAY |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -4.8A Pulsed drain current: -27A Power dissipation: 60W Case: D2PAK; TO263 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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NTCLE100E3474JB0 | VISHAY |
Category: THT measurement NTC thermistorsDescription: NTC thermistor; 470kΩ; THT; 4570K; -40÷125°C; 500mW Power: 0.5W Material constant B: 4570K Type of sensor: NTC thermistor Mounting: THT Operating temperature: -40...125°C Resistance: 470kΩ |
на замовлення 1799 шт: термін постачання 21-30 дні (днів) |
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CNY70 | VISHAY |
Category: PCB Photoelectric SensorsDescription: Sensor: optocoupler; 32V; OUT: transistor; Optocoupler: reflective Type of sensor: optocoupler Kind of optocoupler: reflective Kind of output: transistor Collector-emitter voltage: 32V |
на замовлення 3443 шт: термін постачання 21-30 дні (днів) |
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1.5KE36A-E3/54 | VISHAY |
Category: Unidirectional TVS THT diodesDescription: Diode: TVS; 1.5kW; 36V; 30.1A; unidirectional; DO201; 13 inch reel Type of diode: TVS Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 30.1A Semiconductor structure: unidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 863 шт: термін постачання 21-30 дні (днів) |
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1.5KE36CA-E3/54 | VISHAY |
Category: Bidirectional TVS THT diodesDescription: Diode: TVS; 36V; 30.1A; bidirectional; DO201; 1.5kW; 13 inch reel Type of diode: TVS Max. off-state voltage: 30.8V Breakdown voltage: 36V Max. forward impulse current: 30.1A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Manufacturer series: 1.5KE Technology: TransZorb® Features of semiconductor devices: glass passivated Kind of package: 13 inch reel |
на замовлення 461 шт: термін постачання 21-30 дні (днів) |
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IRLZ44PBF | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 36A Power dissipation: 150W Case: TO220AB Mounting: THT Kind of channel: enhancement Gate-source voltage: ±10V Kind of package: tube Gate charge: 66nC On-state resistance: 28mΩ |
на замовлення 602 шт: термін постачання 21-30 дні (днів) |
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CRCW08054R70FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; 150V; -55÷155°C Type of resistor: thick film Mounting: SMD Case - inch: 0805 Case - mm: 2012 Resistance: 4.7Ω Power: 0.125W Tolerance: ±1% Operating voltage: 150V Operating temperature: -55...155°C |
на замовлення 14195 шт: термін постачання 21-30 дні (днів) |
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CRCW08054R70FKTABC | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; CRCW0805; 150V Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 4.7Ω Power: 0.125W Tolerance: ±1% Operating voltage: 150V Manufacturer series: CRCW0805 Mounting: SMD Operating temperature: -55...155°C |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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CRCW12064R70FKEA | VISHAY |
Category: SMD resistorsDescription: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; 200V; -55÷125°C Type of resistor: thick film Mounting: SMD Case - inch: 1206 Case - mm: 3216 Resistance: 4.7Ω Power: 0.25W Tolerance: ±1% Operating voltage: 200V Operating temperature: -55...125°C |
на замовлення 2997 шт: термін постачання 21-30 дні (днів) |
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P16NP105MAB15 | VISHAY |
Category: Cermet single turn potentiometersDescription: Potentiometer: shaft; single turn; 1MΩ; 1W; ±20%; linear; soldered Type of potentiometer: shaft Kind of potentiometer: single turn Resistance: 1MΩ Tolerance: ±20% Power: 1W Characteristics: linear Leads: solder lugs Track material: cermet Electrical rotation angle: 270° Operating temperature: -40...85°C IP rating: IP67 Temperature coefficient: 150ppm/°C Panel cutout diameter: 10mm Mounting: soldered Knob dimensions: Ø16x8mm Potentiometer features: for industrial use; with knob |
на замовлення 15 шт: термін постачання 21-30 дні (днів) |
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SI2302CDS-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.1A Power dissipation: 0.46W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 57mΩ Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2006 шт: термін постачання 21-30 дні (днів) |
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SI2302DDS-T1-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 2.1A Power dissipation: 0.46W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 57mΩ Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 3389 шт: термін постачання 21-30 дні (днів) |
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| SIHB8N50D-GE3 | VISHAY |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 156W Case: D2PAK; TO263 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHF8N50D-E3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 33W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| SIHP8N50D-GE3 | VISHAY |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.5A Pulsed drain current: 18A Power dissipation: 156W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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293D106X9063E2TE3 | VISHAY |
Category: SMD tantalum capacitorsDescription: Capacitor: tantalum; 10uF; 63VDC; SMD; E; 2917; ±10%; -55÷125°C Type of capacitor: tantalum Mounting: SMD Operating temperature: -55...125°C Capacitance: 10µF Operating voltage: 63V DC Tolerance: ±10% Manufacturer series: Tantamount Case - inch: 2917 Case - mm: 7343 Case: E |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BFC236855474 | VISHAY |
Category: THT Film CapacitorsDescription: Capacitor: polyester; 470nF; 220VAC; 400VDC; 22.5mm; ±10%; THT Mounting: THT Type of capacitor: polyester Operating temperature: -55...85°C Capacitance: 0.47µF Lead length: 0.8mm Terminal pitch: 22.5mm Body dimensions: 8x20x26mm Tolerance: ±10% Operating voltage: 220V AC; 400V DC |
на замовлення 367 шт: термін постачання 21-30 дні (днів) |
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| TS53YL502MR10 |
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Виробник: VISHAY
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 5kΩ; 250mW; SMD; ±20%; linear
Operating temperature: -55...155°C
Body dimensions: 5x5x2.7mm
Power: 0.25W
Torque: 1.5Ncm
Tolerance: ±20%
Temperature coefficient: 100ppm/°C
Operating voltage: 200V
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Resistance: 5kΩ
Track material: cermet
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Kind of potentiometer: single turn
Leads: YL
Category: Single turn SMD trimmers
Description: Potentiometer: mounting; single turn; 5kΩ; 250mW; SMD; ±20%; linear
Operating temperature: -55...155°C
Body dimensions: 5x5x2.7mm
Power: 0.25W
Torque: 1.5Ncm
Tolerance: ±20%
Temperature coefficient: 100ppm/°C
Operating voltage: 200V
Electrical rotation angle: 220 ±15°
Mechanical rotation angle: 270 ±10°
Resistance: 5kΩ
Track material: cermet
IP rating: IP67
Characteristics: linear
Type of potentiometer: mounting
Mounting: SMD
Kind of potentiometer: single turn
Leads: YL
на замовлення 1500 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 132.11 грн |
| 10+ | 104.58 грн |
| 25+ | 99.87 грн |
| 50+ | 95.93 грн |
| 100+ | 92.79 грн |
| 250+ | 88.86 грн |
| 249FGJS0XB25103KA |
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Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; 10kΩ; 1W; ±10%; 6.35mm; THT; Shaft: smooth; 249
Resistance: 10kΩ
Mounting: THT
Operating temperature: -55...125°C
Tolerance: ±10%
Type of potentiometer: shaft
Shaft surface: smooth
Power: 1W
Shaft diameter: 6.35mm
Linearity tolerance: ±10%
Max. operating voltage: 300V AC
Temperature coefficient: 100ppm/°C
Electrical rotation angle: 265°
Manufacturer series: 249
Track material: cermet
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; 10kΩ; 1W; ±10%; 6.35mm; THT; Shaft: smooth; 249
Resistance: 10kΩ
Mounting: THT
Operating temperature: -55...125°C
Tolerance: ±10%
Type of potentiometer: shaft
Shaft surface: smooth
Power: 1W
Shaft diameter: 6.35mm
Linearity tolerance: ±10%
Max. operating voltage: 300V AC
Temperature coefficient: 100ppm/°C
Electrical rotation angle: 265°
Manufacturer series: 249
Track material: cermet
на замовлення 5 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1194.89 грн |
| 293D336X9010B2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 33µF
Operating voltage: 10V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 1411
Case - mm: 3528
Case: B
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 33µF
Operating voltage: 10V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 1411
Case - mm: 3528
Case: B
Manufacturer series: Tantamount
товару немає в наявності
В кошику
од. на суму грн.
| 293D336X9010C2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 33µF
Operating voltage: 10V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2312
Case - mm: 6032
Case: C
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 10VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 33µF
Operating voltage: 10V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2312
Case - mm: 6032
Case: C
Manufacturer series: Tantamount
на замовлення 994 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 34.72 грн |
| 26+ | 15.33 грн |
| 50+ | 12.58 грн |
| 100+ | 11.56 грн |
| 500+ | 9.28 грн |
| 293D336X9016B2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 16VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 1411
Case - mm: 3528
Case: B
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 16VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 1411
Case - mm: 3528
Case: B
Manufacturer series: Tantamount
на замовлення 2495 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.64 грн |
| 20+ | 20.29 грн |
| 50+ | 17.61 грн |
| 100+ | 16.67 грн |
| 500+ | 14.47 грн |
| 1000+ | 13.60 грн |
| 2000+ | 12.82 грн |
| 293D336X9016C2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2312
Case - mm: 6032
Case: C
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 16VDC; SMD; C; 2312; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2312
Case - mm: 6032
Case: C
Manufacturer series: Tantamount
на замовлення 150 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.87 грн |
| 23+ | 17.14 грн |
| 50+ | 14.08 грн |
| 100+ | 13.13 грн |
| 293D336X9016D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 16VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 16V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
на замовлення 1215 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 37.26 грн |
| 21+ | 19.50 грн |
| 50+ | 15.96 грн |
| 100+ | 14.70 грн |
| 500+ | 12.66 грн |
| 293D336X9020D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 20VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 33µF
Operating voltage: 20V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
на замовлення 285 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 53.35 грн |
| 15+ | 26.58 грн |
| 50+ | 21.39 грн |
| 293D336X9025D2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 33µF
Operating voltage: 25V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 33uF; 25VDC; SMD; D; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Capacitance: 33µF
Operating voltage: 25V DC
Tolerance: ±10%
Operating temperature: -55...125°C
Case - inch: 2917
Case - mm: 7343
Case: D
Manufacturer series: Tantamount
товару немає в наявності
В кошику
од. на суму грн.
| BAW56-E3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
на замовлення 13820 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 63+ | 6.77 грн |
| 84+ | 4.72 грн |
| 133+ | 2.96 грн |
| 500+ | 2.24 грн |
| 1000+ | 2.02 грн |
| 3000+ | 1.76 грн |
| 6000+ | 1.64 грн |
| 12000+ | 1.55 грн |
| BAW56-G3-08 |
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Виробник: VISHAY
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
Category: SMD universal diodes
Description: Diode: switching; SMD; 70V; 0.25A; 6ns; SOT23; Ufmax: 1.25V; Ir: 100uA
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 70V
Load current: 0.25A
Reverse recovery time: 6ns
Semiconductor structure: common anode; double
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 0.5A
Leakage current: 0.1mA
Power dissipation: 0.35W
Kind of package: 7 inch reel
Features of semiconductor devices: small signal
Quantity in set/package: 3000pcs.
товару немає в наявності
В кошику
од. на суму грн.
| CRCW040210K0FKTDBC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 10kΩ; 62.5mW; ±1%; 50V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 10kΩ
Power: 62.5mW
Tolerance: ±1%
Operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0402; 10kΩ; 62.5mW; ±1%; 50V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0402
Case - mm: 1005
Resistance: 10kΩ
Power: 62.5mW
Tolerance: ±1%
Operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
на замовлення 610200 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 800+ | 0.58 грн |
| 2700+ | 0.15 грн |
| 6100+ | 0.06 грн |
| 10000+ | 0.04 грн |
| IRLR120TRPBF |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.27Ω
Gate charge: 12nC
Gate-source voltage: ±10V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.9A; Idm: 31A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4.9A
Power dissipation: 42W
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 31A
On-state resistance: 0.27Ω
Gate charge: 12nC
Gate-source voltage: ±10V
на замовлення 1184 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 60.97 грн |
| 14+ | 29.41 грн |
| 25+ | 26.03 грн |
| 100+ | 23.35 грн |
| 500+ | 22.10 грн |
| MAL219826681E3 |
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Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 400VDC; Ø35x60mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 400V DC
Body dimensions: Ø35x60mm
Tolerance: ±20%
Service life: 15000h
Operating temperature: -40...85°C
Terminal pitch: 10mm
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 680uF; 400VDC; Ø35x60mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 680µF
Operating voltage: 400V DC
Body dimensions: Ø35x60mm
Tolerance: ±20%
Service life: 15000h
Operating temperature: -40...85°C
Terminal pitch: 10mm
на замовлення 3 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1367.65 грн |
| SIHA180N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 44A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; Idm: 44A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Pulsed drain current: 44A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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| SIHB180N60E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHD180N60E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 156W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 40A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 156W
Case: DPAK; TO252
Gate-source voltage: ±30V
On-state resistance: 0.195Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SIHG080N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 96A
Power dissipation: 227W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 22A; Idm: 96A; 227W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 22A
Pulsed drain current: 96A
Power dissipation: 227W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 63nC
Kind of package: tube
Kind of channel: enhancement
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| SIHG180N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO247AC
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO247AC
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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| SIHH080N60E-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 96A
Power dissipation: 184W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20A; Idm: 96A; 184W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 96A
Power dissipation: 184W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| SIHH180N60E-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 114W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 114W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 114W
Case: PowerPAK® 8x8L
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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од. на суму грн.
| SIHP180N60E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 44A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 12A
Pulsed drain current: 44A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 33nC
Kind of package: tube
Kind of channel: enhancement
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| MAL219866151E3 |
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Виробник: VISHAY
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 150uF; 400VDC; Ø22x40mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 150µF
Operating voltage: 400V DC
Body dimensions: Ø22x40mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 15000h
Operating temperature: -40...85°C
Category: SNAP-IN electrolytic capacitors
Description: Capacitor: electrolytic; SNAP-IN; 150uF; 400VDC; Ø22x40mm; ±20%
Type of capacitor: electrolytic
Mounting: SNAP-IN
Capacitance: 150µF
Operating voltage: 400V DC
Body dimensions: Ø22x40mm
Terminal pitch: 10mm
Tolerance: ±20%
Service life: 15000h
Operating temperature: -40...85°C
на замовлення 46 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 597.02 грн |
| 10+ | 441.14 грн |
| WSL2512R2000FEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 200mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.2Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
Category: SMD resistors
Description: Resistor: power metal; sensing; SMD; 2512; 200mΩ; 1W; ±1%; -60÷170°C
Type of resistor: power metal
Kind of resistor: sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.2Ω
Power: 1W
Tolerance: ±1%
Operating temperature: -60...170°C
Temperature coefficient: 75ppm/°C
на замовлення 1347 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.11 грн |
| 16+ | 24.85 грн |
| 25+ | 20.45 грн |
| 50+ | 18.87 грн |
| 63+ | 14.78 грн |
| 173+ | 14.00 грн |
| 1000+ | 13.92 грн |
| SMBJ5.0A-E3/52 | ![]() |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4V; 65.2A; unidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Leakage current: 0.8mA
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.4V; 65.2A; unidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Kind of package: 7 inch reel; tape
Technology: TransZorb®
Leakage current: 0.8mA
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
на замовлення 4035 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 23+ | 18.63 грн |
| 31+ | 12.74 грн |
| 51+ | 7.78 грн |
| 100+ | 6.24 грн |
| 250+ | 4.88 грн |
| 400+ | 4.41 грн |
| 750+ | 3.96 грн |
| 1500+ | 3.78 грн |
| SMBJ5.0A-E3/5B |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6735mV; 65.2A; unidirectional; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6735mV
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: 13 inch reel; tape
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6735mV; 65.2A; unidirectional; SMB; TransZorb®
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6735mV
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: 13 inch reel; tape
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
на замовлення 3001 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 17.78 грн |
| 28+ | 14.47 грн |
| 33+ | 12.27 грн |
| 43+ | 9.18 грн |
| 100+ | 5.54 грн |
| 500+ | 4.32 грн |
| SMBJ5.0D-M3/H |
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Виробник: VISHAY
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.5V; 65.9A; unidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Max. forward impulse current: 65.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 6.5V; 65.9A; unidirectional; SMB; TransZorb®; SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.5V
Max. forward impulse current: 65.9A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.5mA
Kind of package: 7 inch reel; tape
Manufacturer series: SMBJ
Features of semiconductor devices: glass passivated
Technology: TransZorb®
на замовлення 2761 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 20.32 грн |
| 35+ | 11.40 грн |
| 100+ | 7.94 грн |
| 500+ | 6.13 грн |
| 750+ | 5.82 грн |
| BFC233840105 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 300VAC; THT; ±20%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 22.5mm
Body dimensions: 26x12x22mm
Operating voltage: 300V AC; 630V DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 300VAC; THT; ±20%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 22.5mm
Body dimensions: 26x12x22mm
Operating voltage: 300V AC; 630V DC
на замовлення 280 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 723.20 грн |
| 3+ | 383.74 грн |
| 7+ | 363.29 грн |
| BFC233910105 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±10%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±10%
Terminal pitch: 22.5mm
Body dimensions: 26x12x22mm
Operating voltage: 310V AC; 630V DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±10%; 22.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±10%
Terminal pitch: 22.5mm
Body dimensions: 26x12x22mm
Operating voltage: 310V AC; 630V DC
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| BFC233921105 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±20%; 27.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 27.5mm
Body dimensions: 31x11x21mm
Operating voltage: 310V AC; 630V DC
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±20%; 27.5mm
Type of capacitor: polypropylene
Capacitance: 1µF
Mounting: THT
Tolerance: ±20%
Terminal pitch: 27.5mm
Body dimensions: 31x11x21mm
Operating voltage: 310V AC; 630V DC
на замовлення 143 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 84.68 грн |
| 10+ | 44.04 грн |
| 25+ | 36.09 грн |
| 32+ | 28.94 грн |
| 88+ | 27.36 грн |
| BFC233926105 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±20%; 22.5mm
Mounting: THT
Type of capacitor: polypropylene
Capacitance: 1µF
Terminal pitch: 22.5mm
Body dimensions: 26x10x19.5mm
Operating voltage: 310V AC; 630V DC
Tolerance: ±20%
Category: THT Film Capacitors
Description: Capacitor: polypropylene; 1uF; 630VDC; 310VAC; THT; ±20%; 22.5mm
Mounting: THT
Type of capacitor: polypropylene
Capacitance: 1µF
Terminal pitch: 22.5mm
Body dimensions: 26x10x19.5mm
Operating voltage: 310V AC; 630V DC
Tolerance: ±20%
на замовлення 348 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 236.27 грн |
| 10+ | 92.79 грн |
| 28+ | 88.07 грн |
| SFH6206-3X001T |
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Виробник: VISHAY
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 5.3kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 5.3kV
CTR@If: 100-320%@10mA
Collector-emitter voltage: 70V
Case: Gull wing 4
Turn-on time: 3µs
Turn-off time: 2.3µs
на замовлення 1011 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 62.67 грн |
| 10+ | 43.41 грн |
| 100+ | 30.51 грн |
| 500+ | 24.38 грн |
| 1000+ | 22.33 грн |
| BAT85S-TAP |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Max. forward voltage: 0.8V
Max. forward impulse current: 5A
Kind of package: Ammo Pack
Max. load current: 0.3A
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Features of semiconductor devices: small signal
Case: DO35
Max. forward voltage: 0.8V
Max. forward impulse current: 5A
Kind of package: Ammo Pack
Max. load current: 0.3A
на замовлення 10907 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.62 грн |
| 60+ | 6.61 грн |
| 66+ | 5.98 грн |
| 100+ | 4.29 грн |
| 500+ | 3.37 грн |
| 1000+ | 3.05 грн |
| 2000+ | 2.78 грн |
| 5000+ | 2.75 грн |
| BAT85S-TR |
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Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Case: DO35
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 5A
Kind of package: 14 inch reel
Features of semiconductor devices: small signal
Category: THT Schottky diodes
Description: Diode: Schottky switching; THT; 30V; 0.2A; DO35; Ufmax: 0.8V
Type of diode: Schottky switching
Case: DO35
Mounting: THT
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. load current: 0.3A
Max. forward impulse current: 5A
Kind of package: 14 inch reel
Features of semiconductor devices: small signal
на замовлення 8860 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 16.94 грн |
| 35+ | 11.24 грн |
| 100+ | 5.85 грн |
| 500+ | 3.92 грн |
| 1000+ | 3.42 грн |
| 2000+ | 3.05 грн |
| 5000+ | 2.71 грн |
| MAL213651222E3 |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; Ø18x35mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Body dimensions: Ø18x35mm
Terminal pitch: 7.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; Ø18x35mm; Pitch: 7.5mm
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Body dimensions: Ø18x35mm
Terminal pitch: 7.5mm
на замовлення 285 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 225.26 грн |
| 100+ | 165.92 грн |
| 200+ | 154.12 грн |
| ZRC00KL2221H00L |
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Виробник: VISHAY
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 18x35.5mm
Category: THT electrolytic capacitors
Description: Capacitor: electrolytic; THT; 2200uF; 50VDC; ±20%; 10000h
Type of capacitor: electrolytic
Mounting: THT
Capacitance: 2.2mF
Operating voltage: 50V DC
Tolerance: ±20%
Service life: 10000h
Operating temperature: -55...105°C
Dimensions: 18x35.5mm
на замовлення 201 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 208.32 грн |
| 10+ | 116.38 грн |
| 50+ | 86.50 грн |
| 100+ | 73.13 грн |
| 200+ | 66.05 грн |
| SIHB12N65E-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
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| SIHF12N65E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
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В кошику
од. на суму грн.
| SIHP12N65E-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; Idm: 28A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Pulsed drain current: 28A
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| 293D226X9010A2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 1206
Case - mm: 3216
Case: A
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; A; 1206; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 1206
Case - mm: 3216
Case: A
на замовлення 8436 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 21.17 грн |
| 33+ | 12.27 грн |
| 50+ | 9.12 грн |
| 100+ | 8.26 грн |
| 250+ | 7.31 грн |
| 500+ | 6.92 грн |
| 1000+ | 6.53 грн |
| 2000+ | 6.29 грн |
| 4000+ | 6.05 грн |
| 293D226X9010B2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 1411
Case - mm: 3528
Case: B
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 22uF; 10VDC; SMD; B; 1411; ±10%; -55÷125°C
Type of capacitor: tantalum
Capacitance: 22µF
Operating voltage: 10V DC
Mounting: SMD
Tolerance: ±10%
Operating temperature: -55...125°C
Manufacturer series: Tantamount
Case - inch: 1411
Case - mm: 3528
Case: B
на замовлення 3903 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 17.78 грн |
| 40+ | 9.99 грн |
| 100+ | 7.94 грн |
| 500+ | 7.00 грн |
| 1000+ | 6.68 грн |
| 2000+ | 6.37 грн |
| IRF9520PBF |
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Виробник: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
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| IRF9520SPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 580 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 138.03 грн |
| 10+ | 88.07 грн |
| 50+ | 76.28 грн |
| 100+ | 71.56 грн |
| 250+ | 66.05 грн |
| 500+ | 60.55 грн |
| IRF9520STRLPBF |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.8A; Idm: -27A; 60W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.8A
Pulsed drain current: -27A
Power dissipation: 60W
Case: D2PAK; TO263
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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В кошику
од. на суму грн.
| NTCLE100E3474JB0 |
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Виробник: VISHAY
Category: THT measurement NTC thermistors
Description: NTC thermistor; 470kΩ; THT; 4570K; -40÷125°C; 500mW
Power: 0.5W
Material constant B: 4570K
Type of sensor: NTC thermistor
Mounting: THT
Operating temperature: -40...125°C
Resistance: 470kΩ
Category: THT measurement NTC thermistors
Description: NTC thermistor; 470kΩ; THT; 4570K; -40÷125°C; 500mW
Power: 0.5W
Material constant B: 4570K
Type of sensor: NTC thermistor
Mounting: THT
Operating temperature: -40...125°C
Resistance: 470kΩ
на замовлення 1799 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 27.95 грн |
| 50+ | 23.91 грн |
| 100+ | 22.73 грн |
| 300+ | 20.37 грн |
| 500+ | 19.19 грн |
| 1000+ | 18.48 грн |
| CNY70 |
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Виробник: VISHAY
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; 32V; OUT: transistor; Optocoupler: reflective
Type of sensor: optocoupler
Kind of optocoupler: reflective
Kind of output: transistor
Collector-emitter voltage: 32V
Category: PCB Photoelectric Sensors
Description: Sensor: optocoupler; 32V; OUT: transistor; Optocoupler: reflective
Type of sensor: optocoupler
Kind of optocoupler: reflective
Kind of output: transistor
Collector-emitter voltage: 32V
на замовлення 3443 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 38.11 грн |
| 30+ | 30.90 грн |
| 50+ | 30.51 грн |
| 1.5KE36A-E3/54 |
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Виробник: VISHAY
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 36V; 30.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Unidirectional TVS THT diodes
Description: Diode: TVS; 1.5kW; 36V; 30.1A; unidirectional; DO201; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: unidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 863 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 30.49 грн |
| 16+ | 26.03 грн |
| 50+ | 23.35 грн |
| 100+ | 22.02 грн |
| 500+ | 18.79 грн |
| 1.5KE36CA-E3/54 |
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Виробник: VISHAY
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 30.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 36V; 30.1A; bidirectional; DO201; 1.5kW; 13 inch reel
Type of diode: TVS
Max. off-state voltage: 30.8V
Breakdown voltage: 36V
Max. forward impulse current: 30.1A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Manufacturer series: 1.5KE
Technology: TransZorb®
Features of semiconductor devices: glass passivated
Kind of package: 13 inch reel
на замовлення 461 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.87 грн |
| 15+ | 27.36 грн |
| 50+ | 22.65 грн |
| 100+ | 20.52 грн |
| 200+ | 18.48 грн |
| IRLZ44PBF |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±10V
Kind of package: tube
Gate charge: 66nC
On-state resistance: 28mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Power dissipation: 150W
Case: TO220AB
Mounting: THT
Kind of channel: enhancement
Gate-source voltage: ±10V
Kind of package: tube
Gate charge: 66nC
On-state resistance: 28mΩ
на замовлення 602 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 117.71 грн |
| 10+ | 84.14 грн |
| 50+ | 75.49 грн |
| 100+ | 72.34 грн |
| 250+ | 67.63 грн |
| 500+ | 65.27 грн |
| CRCW08054R70FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 4.7Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; 150V; -55÷155°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 0805
Case - mm: 2012
Resistance: 4.7Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Operating temperature: -55...155°C
на замовлення 14195 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 5.93 грн |
| 162+ | 2.44 грн |
| 232+ | 1.70 грн |
| 272+ | 1.45 грн |
| 500+ | 1.04 грн |
| 1000+ | 0.92 грн |
| 2500+ | 0.79 грн |
| 5000+ | 0.74 грн |
| CRCW08054R70FKTABC |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; CRCW0805; 150V
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 4.7Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Manufacturer series: CRCW0805
Mounting: SMD
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 4.7Ω; 0.125W; ±1%; CRCW0805; 150V
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 4.7Ω
Power: 0.125W
Tolerance: ±1%
Operating voltage: 150V
Manufacturer series: CRCW0805
Mounting: SMD
Operating temperature: -55...155°C
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 100+ | 6.36 грн |
| 500+ | 2.68 грн |
| 1000+ | 2.08 грн |
| CRCW12064R70FKEA |
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Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; 200V; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...125°C
Category: SMD resistors
Description: Resistor: thick film; SMD; 1206; 4.7Ω; 0.25W; ±1%; 200V; -55÷125°C
Type of resistor: thick film
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Resistance: 4.7Ω
Power: 0.25W
Tolerance: ±1%
Operating voltage: 200V
Operating temperature: -55...125°C
на замовлення 2997 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 72+ | 5.93 грн |
| 143+ | 2.75 грн |
| 262+ | 1.50 грн |
| 500+ | 1.10 грн |
| 1000+ | 0.99 грн |
| 2500+ | 0.88 грн |
| P16NP105MAB15 |
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Виробник: VISHAY
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 1MΩ; 1W; ±20%; linear; soldered
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1MΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Leads: solder lugs
Track material: cermet
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Temperature coefficient: 150ppm/°C
Panel cutout diameter: 10mm
Mounting: soldered
Knob dimensions: Ø16x8mm
Potentiometer features: for industrial use; with knob
Category: Cermet single turn potentiometers
Description: Potentiometer: shaft; single turn; 1MΩ; 1W; ±20%; linear; soldered
Type of potentiometer: shaft
Kind of potentiometer: single turn
Resistance: 1MΩ
Tolerance: ±20%
Power: 1W
Characteristics: linear
Leads: solder lugs
Track material: cermet
Electrical rotation angle: 270°
Operating temperature: -40...85°C
IP rating: IP67
Temperature coefficient: 150ppm/°C
Panel cutout diameter: 10mm
Mounting: soldered
Knob dimensions: Ø16x8mm
Potentiometer features: for industrial use; with knob
на замовлення 15 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1355.79 грн |
| SI2302CDS-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2006 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.87 грн |
| 18+ | 22.96 грн |
| 50+ | 18.09 грн |
| 100+ | 16.28 грн |
| 500+ | 12.66 грн |
| 1000+ | 11.24 грн |
| SI2302DDS-T1-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.1A; 0.46W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.1A
Power dissipation: 0.46W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 3389 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.71 грн |
| 22+ | 18.72 грн |
| 25+ | 16.59 грн |
| 100+ | 13.29 грн |
| 500+ | 9.91 грн |
| 1000+ | 8.65 грн |
| 3000+ | 7.39 грн |
| SIHB8N50D-GE3 |
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Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: D2PAK; TO263
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHF8N50D-E3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 33W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| SIHP8N50D-GE3 |
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Виробник: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.5A; Idm: 18A; 156W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.5A
Pulsed drain current: 18A
Power dissipation: 156W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| 293D106X9063E2TE3 |
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Виробник: VISHAY
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 63VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Operating temperature: -55...125°C
Capacitance: 10µF
Operating voltage: 63V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: E
Category: SMD tantalum capacitors
Description: Capacitor: tantalum; 10uF; 63VDC; SMD; E; 2917; ±10%; -55÷125°C
Type of capacitor: tantalum
Mounting: SMD
Operating temperature: -55...125°C
Capacitance: 10µF
Operating voltage: 63V DC
Tolerance: ±10%
Manufacturer series: Tantamount
Case - inch: 2917
Case - mm: 7343
Case: E
товару немає в наявності
В кошику
од. на суму грн.
| BFC236855474 |
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Виробник: VISHAY
Category: THT Film Capacitors
Description: Capacitor: polyester; 470nF; 220VAC; 400VDC; 22.5mm; ±10%; THT
Mounting: THT
Type of capacitor: polyester
Operating temperature: -55...85°C
Capacitance: 0.47µF
Lead length: 0.8mm
Terminal pitch: 22.5mm
Body dimensions: 8x20x26mm
Tolerance: ±10%
Operating voltage: 220V AC; 400V DC
Category: THT Film Capacitors
Description: Capacitor: polyester; 470nF; 220VAC; 400VDC; 22.5mm; ±10%; THT
Mounting: THT
Type of capacitor: polyester
Operating temperature: -55...85°C
Capacitance: 0.47µF
Lead length: 0.8mm
Terminal pitch: 22.5mm
Body dimensions: 8x20x26mm
Tolerance: ±10%
Operating voltage: 220V AC; 400V DC
на замовлення 367 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 110.94 грн |
| 50+ | 82.57 грн |
| 100+ | 76.28 грн |
| 250+ | 69.20 грн |





























