| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| BU1208-E3/45 | VISHAY |
 Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 800V; If: 12A; Ifsm: 150A Electrical mounting: THT Version: flat Features of semiconductor devices: glass passivated Technology: isoCink+™ Case: BU Type of bridge rectifier: single-phase Leads: flat pin Max. off-state voltage: 0.8kV Max. forward voltage: 0.95V Load current: 12A Max. forward impulse current: 150A Kind of package: tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BU1208-M3/45 | VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 12A; Ifsm: 150A Electrical mounting: THT Version: flat Features of semiconductor devices: glass passivated Technology: isoCink+™ Case: BU Type of bridge rectifier: single-phase Leads: flat pin Max. off-state voltage: 0.8kV Max. forward voltage: 0.95V Load current: 12A Max. forward impulse current: 150A Kind of package: tube |
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RCA040293K1FKED | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0402; 93.1kΩ; 63mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0402 Case - mm: 1005 Resistance: 93.1kΩ Power: 63mW Tolerance: ±1% Max. operating voltage: 50V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC Q200 |
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RCA120693K1FKEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 1206; 93.1kΩ; 250mW; ±1%; -55÷155°C Type of resistor: thick film Case - inch: 1206 Case - mm: 3216 Resistance: 93.1kΩ Power: 0.25W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC Q200 |
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MBA02040C9312FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 93.1kΩ; 400mW; ±1%; 0; Ø0.5x29mm; axial Type of resistor: metal film Mounting: THT Resistance: 93.1kΩ Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads dimensions: Ø0.5x29mm Leads: axial Quantity in set/package: 1000pcs. Manufacturer series: 0 Body dimensions: Ø1.6x3.6mm |
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MBA02040C9312FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 93.1kΩ; 400mW; ±1%; 0; Ø0.5x29mm; axial Type of resistor: metal film Mounting: THT Resistance: 93.1kΩ Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads dimensions: Ø0.5x29mm Leads: axial Quantity in set/package: 5000pcs. Manufacturer series: 0 Body dimensions: Ø1.6x3.6mm |
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В кошику од. на суму грн. | ||||||||||||
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MBA0204VC9312FC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 93.1kΩ; 400mW; ±1%; V; Ø0.5x29mm; axial Type of resistor: metal film Mounting: THT Resistance: 93.1kΩ Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads dimensions: Ø0.5x29mm Leads: axial Quantity in set/package: 1000pcs. Manufacturer series: V Body dimensions: Ø1.6x3.6mm |
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MBA0204VC9312FCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; THT; 93.1kΩ; 400mW; ±1%; V; Ø0.5x29mm; axial Type of resistor: metal film Mounting: THT Resistance: 93.1kΩ Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads dimensions: Ø0.5x29mm Leads: axial Quantity in set/package: 5000pcs. Manufacturer series: V Body dimensions: Ø1.6x3.6mm |
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В кошику од. на суму грн. | ||||||||||||
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MRS16000C9312FC100 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 93.1kΩ; 400mW; ±1%; Ø0.5x29mm; Ø1.6x3.6mm Type of resistor: thin film Mounting: THT Resistance: 93.1kΩ Power: 0.4W Tolerance: ±1% Max. operating voltage: 200V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads dimensions: Ø0.5x29mm Body dimensions: Ø1.6x3.6mm |
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В кошику од. на суму грн. | ||||||||||||
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MRS25000C9312FC100 | VISHAY |
Category: THT Resistors Description: Resistor: thin film; THT; 93.1kΩ; 600mW; ±1%; Ø0.6x28mm; Ø2.5x6.5mm Type of resistor: thin film Mounting: THT Resistance: 93.1kΩ Power: 0.6W Tolerance: ±1% Max. operating voltage: 350V Operating temperature: -55...155°C Temperature coefficient: 50ppm/°C Leads dimensions: Ø0.6x28mm Body dimensions: Ø2.5x6.5mm |
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В кошику од. на суму грн. | ||||||||||||
| CMB02070X9312FB200 | VISHAY |
Category: SMD resistors Description: Resistor: carbon film; SMD; 0207 MELF; 93.1kΩ; 1W; ±1%; Ø2.2x5.8mm Type of resistor: carbon film Mounting: SMD Resistance: 93.1kΩ Power: 1W Tolerance: ±1% Max. operating voltage: 500V Operating temperature: -55...125°C Conform to the norm: AEC Q200 Roll diameter max.: 180mm Body dimensions: Ø2.2x5.8mm Case: 0207 MELF |
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В кошику од. на суму грн. | |||||||||||||
| CMB02070X9312FB700 | VISHAY |
Category: SMD resistors Description: Resistor: carbon film; SMD; 0207 MELF; 93.1kΩ; 1W; ±1%; Ø2.2x5.8mm Type of resistor: carbon film Mounting: SMD Resistance: 93.1kΩ Power: 1W Tolerance: ±1% Max. operating voltage: 500V Operating temperature: -55...125°C Conform to the norm: AEC Q200 Roll diameter max.: 330mm Body dimensions: Ø2.2x5.8mm Case: 0207 MELF |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SI3460DDV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 7.9A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 7.9A Pulsed drain current: 20A Power dissipation: 1.7W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 28mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 630 шт: термін постачання 21-30 дні (днів) |
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SI3458BDV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 3.2A; Idm: 10A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Pulsed drain current: 10A Power dissipation: 2.1W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1499 шт: термін постачання 21-30 дні (днів) |
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SI3433CDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -20A Power dissipation: 2.1W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 38mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SI3417DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -8A Pulsed drain current: -50A Power dissipation: 2.7W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 25.2mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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SI3440DV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 1.2A Pulsed drain current: 6A Power dissipation: 0.59W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 375mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SI3437DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -1.4A Pulsed drain current: -5A Power dissipation: 3.2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 790mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| Si3493DDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -32A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Pulsed drain current: -32A Power dissipation: 3.6W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 51.1mΩ Mounting: SMD Gate charge: 52.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| Si3410DV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 30A Power dissipation: 4.1W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SI3424CDV-T1-BE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 20A Power dissipation: 3.6W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 12.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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SI3424CDV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 2.3W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 20A Power dissipation: 2.3W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 26mΩ Mounting: SMD Gate charge: 12.5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| SI3429EDV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -8A Pulsed drain current: -40A Power dissipation: 2.7W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 38mΩ Mounting: SMD Gate charge: 43.2nC Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
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В кошику од. на суму грн. | |||||||||||||
| SI3430DV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.4A Pulsed drain current: 8A Power dissipation: 2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| Si3430DV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.4A Pulsed drain current: 8A Power dissipation: 2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SI3433CDV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -6A Pulsed drain current: -20A Power dissipation: 3.3W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 60mΩ Mounting: SMD Gate charge: 45nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SI3437DV-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -150V Drain current: -1.4A Pulsed drain current: -5A Power dissipation: 3.2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 790mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SI3438DV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Pulsed drain current: 20A Power dissipation: 3.5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 42.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SI3438DV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 7.4A Pulsed drain current: 20A Power dissipation: 3.5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 42.5mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SI3440ADV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 2.2A Pulsed drain current: 4A Power dissipation: 3.6W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 432mΩ Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SI3440DV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 1.2A Pulsed drain current: 6A Power dissipation: 1.14W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.4Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SI3442BDV-T1-E3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Pulsed drain current: 20A Power dissipation: 1.67W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SI3442BDV-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.2A Pulsed drain current: 20A Power dissipation: 1.67W Case: TSOP6 Gate-source voltage: ±12V On-state resistance: 90mΩ Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| SI3453DV-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -3.4A; Idm: -6A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.4A Pulsed drain current: -6A Power dissipation: 3W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 276mΩ Mounting: SMD Gate charge: 6.8nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
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CRCW08051M20FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 1.2MΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 1.2MΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C Mounting: SMD |
на замовлення 9600 шт: термін постачання 21-30 дні (днів) |
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CRCW08051M50FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 1.5MΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 1.5MΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C Mounting: SMD |
на замовлення 4300 шт: термін постачання 21-30 дні (днів) |
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CRCW08051M43FKTABC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 1.43MΩ; 0.125W; ±1%; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 1.43MΩ Power: 0.125W Tolerance: ±1% Max. operating voltage: 150V Operating temperature: -55...155°C Mounting: SMD |
на замовлення 4000 шт: термін постачання 21-30 дні (днів) |
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RCA08051R00JNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; 0805; 1Ω; 125mW; ±5%; -55÷155°C; 100ppm/°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 1Ω Power: 0.125W Tolerance: ±5% Max. operating voltage: 150V Temperature coefficient: 100ppm/°C Conform to the norm: AEC Q200 Operating temperature: -55...155°C |
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В кошику од. на суму грн. | ||||||||||||
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CRCW08051R00JNEA | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 0805; 1Ω; 0.125W; ±5%; -55÷155°C Type of resistor: thick film Case - inch: 0805 Case - mm: 2012 Resistance: 1Ω Power: 0.125W Tolerance: ±5% Max. operating voltage: 150V Operating temperature: -55...155°C Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
| WSL2512R2200FEA | VISHAY |
Category: SMD resistors Description: Resistor: metal strip; current shunt,sensing; SMD; 2512; 220mΩ; 2W Type of resistor: metal strip Kind of resistor: current shunt; sensing Mounting: SMD Case - inch: 2512 Case - mm: 6432 Resistance: 0.22Ω Power: 2W Tolerance: ±1% Operating temperature: -65...170°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||
| BZT52C11-E3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 11V; SMD; 7 inch reel; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: 7 inch reel Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: BZT52C Quantity in set/package: 3000pcs. |
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В кошику од. на суму грн. | |||||||||||||
| BZT52C11-E3-18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 11V; SMD; 13 inch reel; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: 13 inch reel Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: BZT52C Quantity in set/package: 10000pcs. |
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В кошику од. на суму грн. | |||||||||||||
| BZT52C11-G3-08 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 11V; SMD; 7 inch reel; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: 7 inch reel Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: BZT52-G Quantity in set/package: 3000pcs. |
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| BZT52C11-G3-18 | VISHAY |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 11V; SMD; 13 inch reel; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 11V Mounting: SMD Tolerance: ±5% Kind of package: 13 inch reel Case: SOD123 Semiconductor structure: single diode Leakage current: 0.1µA Manufacturer series: BZT52-G Quantity in set/package: 10000pcs. |
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| VS-MBR1535CT-1-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 35V; 15A; TO262AA; tube; 50pcs. Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 35V Load current: 15A Semiconductor structure: common cathode; double Case: TO262AA Kind of package: tube Quantity in set/package: 50pcs. |
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| VS-MBR1535CT-M3 | VISHAY |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 35V; 15A; TO220AB; tube; 50pcs. Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 35V Load current: 15A Semiconductor structure: common cathode; double Case: TO220AB Kind of package: tube Quantity in set/package: 50pcs. |
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| LTO050F47R00JTE3 | VISHAY |
Category: Power resistors Description: Resistor: thick film; THT; TO220; 47Ω; 50W; ±5%; -55÷155°C Type of resistor: thick film Mounting: THT Case: TO220 Resistance: 47Ω Power: 50W Tolerance: ±5% Max. operating voltage: 500V Operating temperature: -55...155°C Resistor features: needs additional heatsink Power without heatsink: 2.5W Recommended heatsink: thermal resistance 0,5 K/W |
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| LTO150F47R00JTE3 | VISHAY |
Category: Power resistors Description: Resistor: thick film; THT; TO247; 47Ω; 150W; ±5%; -55÷175°C Type of resistor: thick film Resistance: 47Ω Power: 150W Tolerance: ±5% Max. operating voltage: 500V Recommended heatsink: thermal resistance 0,87K/W Operating temperature: -55...175°C Mounting: THT Case: TO247 Power without heatsink: 4.5W Resistor features: needs additional heatsink |
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| D2TO020C250R0FRE3 | VISHAY |
Category: Power resistors Description: Resistor: thick film; SMD; TO263; 250Ω; 25W; ±1%; -55÷155°C Mounting: SMD Resistance: 250Ω Operating temperature: -55...155°C Tolerance: ±1% Conform to the norm: AEC Q200 Type of resistor: thick film Case: TO263 Power: 25W Max. operating voltage: 500V |
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| D2TO035C250R0FRE3 | VISHAY |
Category: Power resistors Description: Resistor: thick film; SMD; TO263; 250Ω; 35W; ±1%; -55÷175°C; 500pcs. Mounting: SMD Resistance: 250Ω Operating temperature: -55...175°C Tolerance: ±1% Conform to the norm: AEC Q200 Quantity in set/package: 500pcs. Type of resistor: thick film Case: TO263 Power: 35W Max. operating voltage: 500V |
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| D2TO035C250R0FTE3 | VISHAY |
Category: Power resistors Description: Resistor: thick film; SMD; TO263; 250Ω; 35W; ±1%; -55÷175°C; 50pcs. Mounting: SMD Resistance: 250Ω Operating temperature: -55...175°C Tolerance: ±1% Conform to the norm: AEC Q200 Quantity in set/package: 50pcs. Type of resistor: thick film Case: TO263 Power: 35W Max. operating voltage: 500V |
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 |
CRCW2512120KFKTHBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 120kΩ; 1W; ±1%; -55÷155°C Operating temperature: -55...155°C Case - mm: 6332 Case - inch: 2512 Mounting: SMD Type of resistor: thick film Power: 1W Resistance: 120kΩ Tolerance: ±1% Temperature coefficient: 100ppm/°C Max. operating voltage: 500V |
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В кошику од. на суму грн. | ||||||||||||
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|
CRCW2512120RJNTHBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 120Ω; 1W; ±5%; -55÷155°C; 200ppm/°C Operating temperature: -55...155°C Case - mm: 6332 Case - inch: 2512 Mounting: SMD Type of resistor: thick film Power: 1W Resistance: 120Ω Tolerance: ±5% Temperature coefficient: 200ppm/°C Max. operating voltage: 500V |
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В кошику од. на суму грн. | ||||||||||||
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|
MBA0204VD1212BC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; precise; THT; 12.1kΩ; 400mW; ±0.1%; V; axial Operating temperature: -55...155°C Body dimensions: Ø1.6x3.6mm Leads: axial Quantity in set/package: 1000pcs. Manufacturer series: V Kind of resistor: precise Mounting: THT Type of resistor: metal film Power: 0.4W Resistance: 12.1kΩ Tolerance: ±0.1% Leads dimensions: Ø0.5x29mm Temperature coefficient: 25ppm/°C Max. operating voltage: 200V |
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|
MBA0204VE1212BC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; precise; THT; 12.1kΩ; 400mW; ±0.1%; V; axial Operating temperature: -55...155°C Body dimensions: Ø1.6x3.6mm Leads: axial Quantity in set/package: 1000pcs. Manufacturer series: V Kind of resistor: precise Mounting: THT Type of resistor: metal film Power: 0.4W Resistance: 12.1kΩ Tolerance: ±0.1% Leads dimensions: Ø0.5x29mm Temperature coefficient: 15ppm/°C Max. operating voltage: 200V |
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|
CRCW2512120RFKTHBC | VISHAY |
Category: SMD resistors Description: Resistor: thick film; SMD; 2512; 120Ω; 1W; ±1%; -55÷155°C; 100ppm/°C Operating temperature: -55...155°C Case - mm: 6332 Case - inch: 2512 Mounting: SMD Type of resistor: thick film Power: 1W Resistance: 120Ω Tolerance: ±1% Temperature coefficient: 100ppm/°C Max. operating voltage: 500V |
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|
MBA0204VD1212BCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; precise; THT; 12.1kΩ; 400mW; ±0.1%; V; axial Operating temperature: -55...155°C Body dimensions: Ø1.6x3.6mm Leads: axial Quantity in set/package: 5000pcs. Manufacturer series: V Kind of resistor: precise Mounting: THT Type of resistor: metal film Power: 0.4W Resistance: 12.1kΩ Tolerance: ±0.1% Leads dimensions: Ø0.5x29mm Temperature coefficient: 25ppm/°C Max. operating voltage: 200V |
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|
MBA0204VE1212BCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; precise; THT; 12.1kΩ; 400mW; ±0.1%; V; axial Operating temperature: -55...155°C Body dimensions: Ø1.6x3.6mm Leads: axial Quantity in set/package: 5000pcs. Manufacturer series: V Kind of resistor: precise Mounting: THT Type of resistor: metal film Power: 0.4W Resistance: 12.1kΩ Tolerance: ±0.1% Leads dimensions: Ø0.5x29mm Temperature coefficient: 15ppm/°C Max. operating voltage: 200V |
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|
MBA0204VE2212BC100 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; precise; THT; 22.1kΩ; 400mW; ±0.1%; V; axial Operating temperature: -55...155°C Body dimensions: Ø1.6x3.6mm Leads: axial Quantity in set/package: 1000pcs. Manufacturer series: V Kind of resistor: precise Mounting: THT Type of resistor: metal film Power: 0.4W Resistance: 22.1kΩ Tolerance: ±0.1% Leads dimensions: Ø0.5x29mm Temperature coefficient: 15ppm/°C Max. operating voltage: 200V |
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|
MBA0204VE2212BCT00 | VISHAY |
Category: THT Resistors Description: Resistor: metal film; precise; THT; 22.1kΩ; 400mW; ±0.1%; V; axial Operating temperature: -55...155°C Body dimensions: Ø1.6x3.6mm Leads: axial Quantity in set/package: 5000pcs. Manufacturer series: V Kind of resistor: precise Mounting: THT Type of resistor: metal film Power: 0.4W Resistance: 22.1kΩ Tolerance: ±0.1% Leads dimensions: Ø0.5x29mm Temperature coefficient: 15ppm/°C Max. operating voltage: 200V |
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В кошику од. на суму грн. |
| BU1208-E3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 12A; Ifsm: 150A
Electrical mounting: THT
Version: flat
Features of semiconductor devices: glass passivated
Technology: isoCink+™
Case: BU
Type of bridge rectifier: single-phase
Leads: flat pin
Max. off-state voltage: 0.8kV
Max. forward voltage: 0.95V
Load current: 12A
Max. forward impulse current: 150A
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 12A; Ifsm: 150A
Electrical mounting: THT
Version: flat
Features of semiconductor devices: glass passivated
Technology: isoCink+™
Case: BU
Type of bridge rectifier: single-phase
Leads: flat pin
Max. off-state voltage: 0.8kV
Max. forward voltage: 0.95V
Load current: 12A
Max. forward impulse current: 150A
Kind of package: tube
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| BU1208-M3/45 |
|
Виробник: VISHAY
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 12A; Ifsm: 150A
Electrical mounting: THT
Version: flat
Features of semiconductor devices: glass passivated
Technology: isoCink+™
Case: BU
Type of bridge rectifier: single-phase
Leads: flat pin
Max. off-state voltage: 0.8kV
Max. forward voltage: 0.95V
Load current: 12A
Max. forward impulse current: 150A
Kind of package: tube
Category: Flat single phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 12A; Ifsm: 150A
Electrical mounting: THT
Version: flat
Features of semiconductor devices: glass passivated
Technology: isoCink+™
Case: BU
Type of bridge rectifier: single-phase
Leads: flat pin
Max. off-state voltage: 0.8kV
Max. forward voltage: 0.95V
Load current: 12A
Max. forward impulse current: 150A
Kind of package: tube
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| RCA040293K1FKED |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0402; 93.1kΩ; 63mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 93.1kΩ
Power: 63mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 0402; 93.1kΩ; 63mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0402
Case - mm: 1005
Resistance: 93.1kΩ
Power: 63mW
Tolerance: ±1%
Max. operating voltage: 50V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
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| RCA120693K1FKEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 1206; 93.1kΩ; 250mW; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 93.1kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Category: SMD resistors
Description: Resistor: thick film; 1206; 93.1kΩ; 250mW; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 1206
Case - mm: 3216
Resistance: 93.1kΩ
Power: 0.25W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
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| MBA02040C9312FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 93.1kΩ; 400mW; ±1%; 0; Ø0.5x29mm; axial
Type of resistor: metal film
Mounting: THT
Resistance: 93.1kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.5x29mm
Leads: axial
Quantity in set/package: 1000pcs.
Manufacturer series: 0
Body dimensions: Ø1.6x3.6mm
Category: THT Resistors
Description: Resistor: metal film; THT; 93.1kΩ; 400mW; ±1%; 0; Ø0.5x29mm; axial
Type of resistor: metal film
Mounting: THT
Resistance: 93.1kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.5x29mm
Leads: axial
Quantity in set/package: 1000pcs.
Manufacturer series: 0
Body dimensions: Ø1.6x3.6mm
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| MBA02040C9312FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 93.1kΩ; 400mW; ±1%; 0; Ø0.5x29mm; axial
Type of resistor: metal film
Mounting: THT
Resistance: 93.1kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.5x29mm
Leads: axial
Quantity in set/package: 5000pcs.
Manufacturer series: 0
Body dimensions: Ø1.6x3.6mm
Category: THT Resistors
Description: Resistor: metal film; THT; 93.1kΩ; 400mW; ±1%; 0; Ø0.5x29mm; axial
Type of resistor: metal film
Mounting: THT
Resistance: 93.1kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.5x29mm
Leads: axial
Quantity in set/package: 5000pcs.
Manufacturer series: 0
Body dimensions: Ø1.6x3.6mm
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| MBA0204VC9312FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 93.1kΩ; 400mW; ±1%; V; Ø0.5x29mm; axial
Type of resistor: metal film
Mounting: THT
Resistance: 93.1kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.5x29mm
Leads: axial
Quantity in set/package: 1000pcs.
Manufacturer series: V
Body dimensions: Ø1.6x3.6mm
Category: THT Resistors
Description: Resistor: metal film; THT; 93.1kΩ; 400mW; ±1%; V; Ø0.5x29mm; axial
Type of resistor: metal film
Mounting: THT
Resistance: 93.1kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.5x29mm
Leads: axial
Quantity in set/package: 1000pcs.
Manufacturer series: V
Body dimensions: Ø1.6x3.6mm
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| MBA0204VC9312FCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; THT; 93.1kΩ; 400mW; ±1%; V; Ø0.5x29mm; axial
Type of resistor: metal film
Mounting: THT
Resistance: 93.1kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.5x29mm
Leads: axial
Quantity in set/package: 5000pcs.
Manufacturer series: V
Body dimensions: Ø1.6x3.6mm
Category: THT Resistors
Description: Resistor: metal film; THT; 93.1kΩ; 400mW; ±1%; V; Ø0.5x29mm; axial
Type of resistor: metal film
Mounting: THT
Resistance: 93.1kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.5x29mm
Leads: axial
Quantity in set/package: 5000pcs.
Manufacturer series: V
Body dimensions: Ø1.6x3.6mm
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| MRS16000C9312FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 93.1kΩ; 400mW; ±1%; Ø0.5x29mm; Ø1.6x3.6mm
Type of resistor: thin film
Mounting: THT
Resistance: 93.1kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
Category: THT Resistors
Description: Resistor: thin film; THT; 93.1kΩ; 400mW; ±1%; Ø0.5x29mm; Ø1.6x3.6mm
Type of resistor: thin film
Mounting: THT
Resistance: 93.1kΩ
Power: 0.4W
Tolerance: ±1%
Max. operating voltage: 200V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.5x29mm
Body dimensions: Ø1.6x3.6mm
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| MRS25000C9312FC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: thin film; THT; 93.1kΩ; 600mW; ±1%; Ø0.6x28mm; Ø2.5x6.5mm
Type of resistor: thin film
Mounting: THT
Resistance: 93.1kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Body dimensions: Ø2.5x6.5mm
Category: THT Resistors
Description: Resistor: thin film; THT; 93.1kΩ; 600mW; ±1%; Ø0.6x28mm; Ø2.5x6.5mm
Type of resistor: thin film
Mounting: THT
Resistance: 93.1kΩ
Power: 0.6W
Tolerance: ±1%
Max. operating voltage: 350V
Operating temperature: -55...155°C
Temperature coefficient: 50ppm/°C
Leads dimensions: Ø0.6x28mm
Body dimensions: Ø2.5x6.5mm
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| CMB02070X9312FB200 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 93.1kΩ; 1W; ±1%; Ø2.2x5.8mm
Type of resistor: carbon film
Mounting: SMD
Resistance: 93.1kΩ
Power: 1W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...125°C
Conform to the norm: AEC Q200
Roll diameter max.: 180mm
Body dimensions: Ø2.2x5.8mm
Case: 0207 MELF
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 93.1kΩ; 1W; ±1%; Ø2.2x5.8mm
Type of resistor: carbon film
Mounting: SMD
Resistance: 93.1kΩ
Power: 1W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...125°C
Conform to the norm: AEC Q200
Roll diameter max.: 180mm
Body dimensions: Ø2.2x5.8mm
Case: 0207 MELF
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| CMB02070X9312FB700 |
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 93.1kΩ; 1W; ±1%; Ø2.2x5.8mm
Type of resistor: carbon film
Mounting: SMD
Resistance: 93.1kΩ
Power: 1W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...125°C
Conform to the norm: AEC Q200
Roll diameter max.: 330mm
Body dimensions: Ø2.2x5.8mm
Case: 0207 MELF
Category: SMD resistors
Description: Resistor: carbon film; SMD; 0207 MELF; 93.1kΩ; 1W; ±1%; Ø2.2x5.8mm
Type of resistor: carbon film
Mounting: SMD
Resistance: 93.1kΩ
Power: 1W
Tolerance: ±1%
Max. operating voltage: 500V
Operating temperature: -55...125°C
Conform to the norm: AEC Q200
Roll diameter max.: 330mm
Body dimensions: Ø2.2x5.8mm
Case: 0207 MELF
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| SI3460DDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 7.9A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 7.9A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 7.9A
Pulsed drain current: 20A
Power dissipation: 1.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 630 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 33.01 грн |
| 19+ | 20.61 грн |
| 50+ | 17.63 грн |
| 100+ | 13.95 грн |
| 105+ | 8.74 грн |
| 289+ | 8.28 грн |
| SI3458BDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 3.2A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 10A
Power dissipation: 2.1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 3.2A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 10A
Power dissipation: 2.1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1499 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 57.77 грн |
| 12+ | 32.34 грн |
| 25+ | 28.89 грн |
| 40+ | 23.14 грн |
| 100+ | 23.07 грн |
| 110+ | 21.84 грн |
| SI3433CDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 2.1W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI3417DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -50A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -50A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 25.2mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI3440DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 0.59W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 375mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 0.59W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 375mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI3437DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| Si3493DDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -32A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -32A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 51.1mΩ
Mounting: SMD
Gate charge: 52.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -8A; Idm: -32A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -32A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 51.1mΩ
Mounting: SMD
Gate charge: 52.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| Si3410DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 30A; 4.1W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 30A
Power dissipation: 4.1W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI3424CDV-T1-BE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 3.6W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI3424CDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 2.3W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 2.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 8A; Idm: 20A; 2.3W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 20A
Power dissipation: 2.3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 12.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI3429EDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 43.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -8A; Idm: -40A; 2.7W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 43.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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| SI3430DV-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 8A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 8A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| Si3430DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 8A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.4A
Pulsed drain current: 8A
Power dissipation: 2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.185Ω
Mounting: SMD
Gate charge: 8.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI3433CDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6A
Pulsed drain current: -20A
Power dissipation: 3.3W
Case: TSOP6
Gate-source voltage: ±8V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI3437DV-T1-E3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -150V; -1.4A; Idm: -5A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.4A
Pulsed drain current: -5A
Power dissipation: 3.2W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 790mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI3438DV-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI3438DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 7.4A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 7.4A
Pulsed drain current: 20A
Power dissipation: 3.5W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 42.5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI3440ADV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.2A
Pulsed drain current: 4A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 432mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 2.2A; Idm: 4A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 2.2A
Pulsed drain current: 4A
Power dissipation: 3.6W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 432mΩ
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI3440DV-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 150V; 1.2A; Idm: 6A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 1.2A
Pulsed drain current: 6A
Power dissipation: 1.14W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI3442BDV-T1-E3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI3442BDV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.2A; Idm: 20A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.2A
Pulsed drain current: 20A
Power dissipation: 1.67W
Case: TSOP6
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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| SI3453DV-T1-GE3 |
|
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -3.4A; Idm: -6A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -6A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -3.4A; Idm: -6A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.4A
Pulsed drain current: -6A
Power dissipation: 3W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 276mΩ
Mounting: SMD
Gate charge: 6.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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| CRCW08051M20FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.2MΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1.2MΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.2MΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1.2MΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
на замовлення 9600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 1.96 грн |
| 500+ | 0.97 грн |
| 1000+ | 0.59 грн |
| 4100+ | 0.22 грн |
| 5000+ | 0.20 грн |
| CRCW08051M50FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.5MΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1.5MΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.5MΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1.5MΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
на замовлення 4300 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 1.96 грн |
| 500+ | 0.97 грн |
| 1000+ | 0.59 грн |
| 4100+ | 0.22 грн |
| CRCW08051M43FKTABC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.43MΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1.43MΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1.43MΩ; 0.125W; ±1%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1.43MΩ
Power: 0.125W
Tolerance: ±1%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
на замовлення 4000 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 300+ | 1.96 грн |
| 500+ | 0.97 грн |
| 1000+ | 0.59 грн |
| RCA08051R00JNEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; 0805; 1Ω; 125mW; ±5%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1Ω
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Operating temperature: -55...155°C
Category: SMD resistors
Description: Resistor: thick film; 0805; 1Ω; 125mW; ±5%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1Ω
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC Q200
Operating temperature: -55...155°C
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| CRCW08051R00JNEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1Ω; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1Ω
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
Category: SMD resistors
Description: Resistor: thick film; SMD; 0805; 1Ω; 0.125W; ±5%; -55÷155°C
Type of resistor: thick film
Case - inch: 0805
Case - mm: 2012
Resistance: 1Ω
Power: 0.125W
Tolerance: ±5%
Max. operating voltage: 150V
Operating temperature: -55...155°C
Mounting: SMD
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| WSL2512R2200FEA |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2512; 220mΩ; 2W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.22Ω
Power: 2W
Tolerance: ±1%
Operating temperature: -65...170°C
Category: SMD resistors
Description: Resistor: metal strip; current shunt,sensing; SMD; 2512; 220mΩ; 2W
Type of resistor: metal strip
Kind of resistor: current shunt; sensing
Mounting: SMD
Case - inch: 2512
Case - mm: 6432
Resistance: 0.22Ω
Power: 2W
Tolerance: ±1%
Operating temperature: -65...170°C
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| BZT52C11-E3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52C
Quantity in set/package: 3000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52C
Quantity in set/package: 3000pcs.
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| BZT52C11-E3-18 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; 13 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: 13 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52C
Quantity in set/package: 10000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; 13 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: 13 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52C
Quantity in set/package: 10000pcs.
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| BZT52C11-G3-08 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52-G
Quantity in set/package: 3000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; 7 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: 7 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52-G
Quantity in set/package: 3000pcs.
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| BZT52C11-G3-18 |
|
Виробник: VISHAY
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; 13 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: 13 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52-G
Quantity in set/package: 10000pcs.
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 11V; SMD; 13 inch reel; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 11V
Mounting: SMD
Tolerance: ±5%
Kind of package: 13 inch reel
Case: SOD123
Semiconductor structure: single diode
Leakage current: 0.1µA
Manufacturer series: BZT52-G
Quantity in set/package: 10000pcs.
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| VS-MBR1535CT-1-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 15A; TO262AA; tube; 50pcs.
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 15A
Semiconductor structure: common cathode; double
Case: TO262AA
Kind of package: tube
Quantity in set/package: 50pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 15A; TO262AA; tube; 50pcs.
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 15A
Semiconductor structure: common cathode; double
Case: TO262AA
Kind of package: tube
Quantity in set/package: 50pcs.
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| VS-MBR1535CT-M3 |
|
Виробник: VISHAY
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 15A; TO220AB; tube; 50pcs.
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 15A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Quantity in set/package: 50pcs.
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 15A; TO220AB; tube; 50pcs.
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 15A
Semiconductor structure: common cathode; double
Case: TO220AB
Kind of package: tube
Quantity in set/package: 50pcs.
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| LTO050F47R00JTE3 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: thick film; THT; TO220; 47Ω; 50W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: THT
Case: TO220
Resistance: 47Ω
Power: 50W
Tolerance: ±5%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Resistor features: needs additional heatsink
Power without heatsink: 2.5W
Recommended heatsink: thermal resistance 0,5 K/W
Category: Power resistors
Description: Resistor: thick film; THT; TO220; 47Ω; 50W; ±5%; -55÷155°C
Type of resistor: thick film
Mounting: THT
Case: TO220
Resistance: 47Ω
Power: 50W
Tolerance: ±5%
Max. operating voltage: 500V
Operating temperature: -55...155°C
Resistor features: needs additional heatsink
Power without heatsink: 2.5W
Recommended heatsink: thermal resistance 0,5 K/W
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| LTO150F47R00JTE3 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: thick film; THT; TO247; 47Ω; 150W; ±5%; -55÷175°C
Type of resistor: thick film
Resistance: 47Ω
Power: 150W
Tolerance: ±5%
Max. operating voltage: 500V
Recommended heatsink: thermal resistance 0,87K/W
Operating temperature: -55...175°C
Mounting: THT
Case: TO247
Power without heatsink: 4.5W
Resistor features: needs additional heatsink
Category: Power resistors
Description: Resistor: thick film; THT; TO247; 47Ω; 150W; ±5%; -55÷175°C
Type of resistor: thick film
Resistance: 47Ω
Power: 150W
Tolerance: ±5%
Max. operating voltage: 500V
Recommended heatsink: thermal resistance 0,87K/W
Operating temperature: -55...175°C
Mounting: THT
Case: TO247
Power without heatsink: 4.5W
Resistor features: needs additional heatsink
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| D2TO020C250R0FRE3 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: thick film; SMD; TO263; 250Ω; 25W; ±1%; -55÷155°C
Mounting: SMD
Resistance: 250Ω
Operating temperature: -55...155°C
Tolerance: ±1%
Conform to the norm: AEC Q200
Type of resistor: thick film
Case: TO263
Power: 25W
Max. operating voltage: 500V
Category: Power resistors
Description: Resistor: thick film; SMD; TO263; 250Ω; 25W; ±1%; -55÷155°C
Mounting: SMD
Resistance: 250Ω
Operating temperature: -55...155°C
Tolerance: ±1%
Conform to the norm: AEC Q200
Type of resistor: thick film
Case: TO263
Power: 25W
Max. operating voltage: 500V
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| D2TO035C250R0FRE3 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: thick film; SMD; TO263; 250Ω; 35W; ±1%; -55÷175°C; 500pcs.
Mounting: SMD
Resistance: 250Ω
Operating temperature: -55...175°C
Tolerance: ±1%
Conform to the norm: AEC Q200
Quantity in set/package: 500pcs.
Type of resistor: thick film
Case: TO263
Power: 35W
Max. operating voltage: 500V
Category: Power resistors
Description: Resistor: thick film; SMD; TO263; 250Ω; 35W; ±1%; -55÷175°C; 500pcs.
Mounting: SMD
Resistance: 250Ω
Operating temperature: -55...175°C
Tolerance: ±1%
Conform to the norm: AEC Q200
Quantity in set/package: 500pcs.
Type of resistor: thick film
Case: TO263
Power: 35W
Max. operating voltage: 500V
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| D2TO035C250R0FTE3 |
|
Виробник: VISHAY
Category: Power resistors
Description: Resistor: thick film; SMD; TO263; 250Ω; 35W; ±1%; -55÷175°C; 50pcs.
Mounting: SMD
Resistance: 250Ω
Operating temperature: -55...175°C
Tolerance: ±1%
Conform to the norm: AEC Q200
Quantity in set/package: 50pcs.
Type of resistor: thick film
Case: TO263
Power: 35W
Max. operating voltage: 500V
Category: Power resistors
Description: Resistor: thick film; SMD; TO263; 250Ω; 35W; ±1%; -55÷175°C; 50pcs.
Mounting: SMD
Resistance: 250Ω
Operating temperature: -55...175°C
Tolerance: ±1%
Conform to the norm: AEC Q200
Quantity in set/package: 50pcs.
Type of resistor: thick film
Case: TO263
Power: 35W
Max. operating voltage: 500V
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| CRCW2512120KFKTHBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 120kΩ; 1W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Case - mm: 6332
Case - inch: 2512
Mounting: SMD
Type of resistor: thick film
Power: 1W
Resistance: 120kΩ
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 120kΩ; 1W; ±1%; -55÷155°C
Operating temperature: -55...155°C
Case - mm: 6332
Case - inch: 2512
Mounting: SMD
Type of resistor: thick film
Power: 1W
Resistance: 120kΩ
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
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| CRCW2512120RJNTHBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 120Ω; 1W; ±5%; -55÷155°C; 200ppm/°C
Operating temperature: -55...155°C
Case - mm: 6332
Case - inch: 2512
Mounting: SMD
Type of resistor: thick film
Power: 1W
Resistance: 120Ω
Tolerance: ±5%
Temperature coefficient: 200ppm/°C
Max. operating voltage: 500V
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 120Ω; 1W; ±5%; -55÷155°C; 200ppm/°C
Operating temperature: -55...155°C
Case - mm: 6332
Case - inch: 2512
Mounting: SMD
Type of resistor: thick film
Power: 1W
Resistance: 120Ω
Tolerance: ±5%
Temperature coefficient: 200ppm/°C
Max. operating voltage: 500V
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| MBA0204VD1212BC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; precise; THT; 12.1kΩ; 400mW; ±0.1%; V; axial
Operating temperature: -55...155°C
Body dimensions: Ø1.6x3.6mm
Leads: axial
Quantity in set/package: 1000pcs.
Manufacturer series: V
Kind of resistor: precise
Mounting: THT
Type of resistor: metal film
Power: 0.4W
Resistance: 12.1kΩ
Tolerance: ±0.1%
Leads dimensions: Ø0.5x29mm
Temperature coefficient: 25ppm/°C
Max. operating voltage: 200V
Category: THT Resistors
Description: Resistor: metal film; precise; THT; 12.1kΩ; 400mW; ±0.1%; V; axial
Operating temperature: -55...155°C
Body dimensions: Ø1.6x3.6mm
Leads: axial
Quantity in set/package: 1000pcs.
Manufacturer series: V
Kind of resistor: precise
Mounting: THT
Type of resistor: metal film
Power: 0.4W
Resistance: 12.1kΩ
Tolerance: ±0.1%
Leads dimensions: Ø0.5x29mm
Temperature coefficient: 25ppm/°C
Max. operating voltage: 200V
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| MBA0204VE1212BC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; precise; THT; 12.1kΩ; 400mW; ±0.1%; V; axial
Operating temperature: -55...155°C
Body dimensions: Ø1.6x3.6mm
Leads: axial
Quantity in set/package: 1000pcs.
Manufacturer series: V
Kind of resistor: precise
Mounting: THT
Type of resistor: metal film
Power: 0.4W
Resistance: 12.1kΩ
Tolerance: ±0.1%
Leads dimensions: Ø0.5x29mm
Temperature coefficient: 15ppm/°C
Max. operating voltage: 200V
Category: THT Resistors
Description: Resistor: metal film; precise; THT; 12.1kΩ; 400mW; ±0.1%; V; axial
Operating temperature: -55...155°C
Body dimensions: Ø1.6x3.6mm
Leads: axial
Quantity in set/package: 1000pcs.
Manufacturer series: V
Kind of resistor: precise
Mounting: THT
Type of resistor: metal film
Power: 0.4W
Resistance: 12.1kΩ
Tolerance: ±0.1%
Leads dimensions: Ø0.5x29mm
Temperature coefficient: 15ppm/°C
Max. operating voltage: 200V
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| CRCW2512120RFKTHBC |
|
Виробник: VISHAY
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 120Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Operating temperature: -55...155°C
Case - mm: 6332
Case - inch: 2512
Mounting: SMD
Type of resistor: thick film
Power: 1W
Resistance: 120Ω
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
Category: SMD resistors
Description: Resistor: thick film; SMD; 2512; 120Ω; 1W; ±1%; -55÷155°C; 100ppm/°C
Operating temperature: -55...155°C
Case - mm: 6332
Case - inch: 2512
Mounting: SMD
Type of resistor: thick film
Power: 1W
Resistance: 120Ω
Tolerance: ±1%
Temperature coefficient: 100ppm/°C
Max. operating voltage: 500V
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| MBA0204VD1212BCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; precise; THT; 12.1kΩ; 400mW; ±0.1%; V; axial
Operating temperature: -55...155°C
Body dimensions: Ø1.6x3.6mm
Leads: axial
Quantity in set/package: 5000pcs.
Manufacturer series: V
Kind of resistor: precise
Mounting: THT
Type of resistor: metal film
Power: 0.4W
Resistance: 12.1kΩ
Tolerance: ±0.1%
Leads dimensions: Ø0.5x29mm
Temperature coefficient: 25ppm/°C
Max. operating voltage: 200V
Category: THT Resistors
Description: Resistor: metal film; precise; THT; 12.1kΩ; 400mW; ±0.1%; V; axial
Operating temperature: -55...155°C
Body dimensions: Ø1.6x3.6mm
Leads: axial
Quantity in set/package: 5000pcs.
Manufacturer series: V
Kind of resistor: precise
Mounting: THT
Type of resistor: metal film
Power: 0.4W
Resistance: 12.1kΩ
Tolerance: ±0.1%
Leads dimensions: Ø0.5x29mm
Temperature coefficient: 25ppm/°C
Max. operating voltage: 200V
товару немає в наявності
В кошику
од. на суму грн.
| MBA0204VE1212BCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; precise; THT; 12.1kΩ; 400mW; ±0.1%; V; axial
Operating temperature: -55...155°C
Body dimensions: Ø1.6x3.6mm
Leads: axial
Quantity in set/package: 5000pcs.
Manufacturer series: V
Kind of resistor: precise
Mounting: THT
Type of resistor: metal film
Power: 0.4W
Resistance: 12.1kΩ
Tolerance: ±0.1%
Leads dimensions: Ø0.5x29mm
Temperature coefficient: 15ppm/°C
Max. operating voltage: 200V
Category: THT Resistors
Description: Resistor: metal film; precise; THT; 12.1kΩ; 400mW; ±0.1%; V; axial
Operating temperature: -55...155°C
Body dimensions: Ø1.6x3.6mm
Leads: axial
Quantity in set/package: 5000pcs.
Manufacturer series: V
Kind of resistor: precise
Mounting: THT
Type of resistor: metal film
Power: 0.4W
Resistance: 12.1kΩ
Tolerance: ±0.1%
Leads dimensions: Ø0.5x29mm
Temperature coefficient: 15ppm/°C
Max. operating voltage: 200V
товару немає в наявності
В кошику
од. на суму грн.
| MBA0204VE2212BC100 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; precise; THT; 22.1kΩ; 400mW; ±0.1%; V; axial
Operating temperature: -55...155°C
Body dimensions: Ø1.6x3.6mm
Leads: axial
Quantity in set/package: 1000pcs.
Manufacturer series: V
Kind of resistor: precise
Mounting: THT
Type of resistor: metal film
Power: 0.4W
Resistance: 22.1kΩ
Tolerance: ±0.1%
Leads dimensions: Ø0.5x29mm
Temperature coefficient: 15ppm/°C
Max. operating voltage: 200V
Category: THT Resistors
Description: Resistor: metal film; precise; THT; 22.1kΩ; 400mW; ±0.1%; V; axial
Operating temperature: -55...155°C
Body dimensions: Ø1.6x3.6mm
Leads: axial
Quantity in set/package: 1000pcs.
Manufacturer series: V
Kind of resistor: precise
Mounting: THT
Type of resistor: metal film
Power: 0.4W
Resistance: 22.1kΩ
Tolerance: ±0.1%
Leads dimensions: Ø0.5x29mm
Temperature coefficient: 15ppm/°C
Max. operating voltage: 200V
товару немає в наявності
В кошику
од. на суму грн.
| MBA0204VE2212BCT00 |
|
Виробник: VISHAY
Category: THT Resistors
Description: Resistor: metal film; precise; THT; 22.1kΩ; 400mW; ±0.1%; V; axial
Operating temperature: -55...155°C
Body dimensions: Ø1.6x3.6mm
Leads: axial
Quantity in set/package: 5000pcs.
Manufacturer series: V
Kind of resistor: precise
Mounting: THT
Type of resistor: metal film
Power: 0.4W
Resistance: 22.1kΩ
Tolerance: ±0.1%
Leads dimensions: Ø0.5x29mm
Temperature coefficient: 15ppm/°C
Max. operating voltage: 200V
Category: THT Resistors
Description: Resistor: metal film; precise; THT; 22.1kΩ; 400mW; ±0.1%; V; axial
Operating temperature: -55...155°C
Body dimensions: Ø1.6x3.6mm
Leads: axial
Quantity in set/package: 5000pcs.
Manufacturer series: V
Kind of resistor: precise
Mounting: THT
Type of resistor: metal film
Power: 0.4W
Resistance: 22.1kΩ
Tolerance: ±0.1%
Leads dimensions: Ø0.5x29mm
Temperature coefficient: 15ppm/°C
Max. operating voltage: 200V
товару немає в наявності
В кошику
од. на суму грн.