Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SI8499DB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -16A; Idm: -20A Mounting: SMD Technology: TrenchFET® Drain current: -16A Kind of channel: enhanced Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape On-state resistance: 0.12Ω Pulsed drain current: -20A Power dissipation: 13W Gate charge: 30nC Polarisation: unipolar кількість в упаковці: 3000 шт |
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SI8800EDB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.8A; Idm: 15A Mounting: SMD Drain-source voltage: 20V Drain current: 2.8A On-state resistance: 0.15Ω Type of transistor: N-MOSFET Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 8.3nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 15A кількість в упаковці: 3000 шт |
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SI8802DB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 3.5A; Idm: 15A Kind of package: reel; tape Power dissipation: 0.9W Polarisation: unipolar Gate charge: 6.5nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 15A Mounting: SMD Drain-source voltage: 8V Drain current: 3.5A On-state resistance: 135mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
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SI8806DB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 3.9A; Idm: 20A Mounting: SMD On-state resistance: 75mΩ Kind of package: reel; tape Technology: TrenchFET® Drain-source voltage: 12V Drain current: 3.9A Type of transistor: N-MOSFET Power dissipation: 0.9W Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 20A кількість в упаковці: 3000 шт |
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SI8808DB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 2.5A; Idm: 10A On-state resistance: 0.165Ω Mounting: SMD Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 10nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 10A Drain-source voltage: 30V Drain current: 2.5A Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
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SI8810EDB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.9A; Idm: 15A Polarisation: unipolar Type of transistor: N-MOSFET Power dissipation: 0.9W Kind of package: reel; tape Gate charge: 8nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 15A Mounting: SMD Drain-source voltage: 20V Drain current: 2.9A On-state resistance: 0.125Ω кількість в упаковці: 3000 шт |
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SI8812DB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 3.2A; Idm: 20A Kind of package: reel; tape Drain-source voltage: 20V Drain current: 3.2A On-state resistance: 93mΩ Type of transistor: N-MOSFET Power dissipation: 0.9W Polarisation: unipolar Gate charge: 17nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 20A Mounting: SMD кількість в упаковці: 3000 шт |
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SI8816EDB-T2-E1 | VISHAY | SI8816EDB-T2-E1 SMD N channel transistors |
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SI8817DB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.9A; Idm: -15A Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Power dissipation: 0.9W On-state resistance: 0.32Ω Polarisation: unipolar Technology: TrenchFET® Pulsed drain current: -15A Gate charge: 19nC Drain current: -2.9A Kind of channel: enhanced Drain-source voltage: -20V Gate-source voltage: ±8V кількість в упаковці: 3000 шт |
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SI8819EDB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -2.9A; Idm: -15A Mounting: SMD Technology: TrenchFET® Drain current: -2.9A Kind of channel: enhanced Drain-source voltage: -12V Type of transistor: P-MOSFET Gate-source voltage: ±8V Kind of package: reel; tape On-state resistance: 0.28Ω Pulsed drain current: -15A Power dissipation: 0.9W Gate charge: 17nC Polarisation: unipolar кількість в упаковці: 3000 шт |
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SI8821EDB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.3A; Idm: -15A Mounting: SMD Drain-source voltage: -30V Drain current: -2.3A On-state resistance: 0.215Ω Type of transistor: P-MOSFET Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -15A кількість в упаковці: 3000 шт |
товар відсутній |
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Si8823EDB-T2-E1 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.7A; Idm: -15A Mounting: SMD Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 17nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -15A Drain-source voltage: -20V Drain current: -2.7A On-state resistance: 335mΩ Type of transistor: P-MOSFET кількість в упаковці: 3000 шт |
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SI8824EDB-T2-E1 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.9A; Idm: 15A Mounting: SMD Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Gate charge: 6nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 15A Drain-source voltage: 20V Drain current: 2.9A On-state resistance: 0.175Ω Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
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SI8851EDB-T2-E1 | VISHAY | SI8851EDB-T2-E1 SMD P channel transistors |
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SI8902AEDB-T2-E1 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 24V; 11A; Idm: 40A Type of transistor: N-MOSFET x2 Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 24V Drain current: 11A Pulsed drain current: 40A Power dissipation: 5.7W Gate-source voltage: ±12V On-state resistance: 37mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SI9407BDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.6A Power dissipation: 5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 22nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 3920 шт: термін постачання 14-21 дні (днів) |
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SI9407BDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4.7A; Idm: -20A; 3.2W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4.7A Pulsed drain current: -20A Power dissipation: 3.2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.12Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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SI9407BDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.6A Power dissipation: 5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 22nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 3920 шт: термін постачання 14-21 дні (днів) |
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Si9433BDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1223 шт: термін постачання 14-21 дні (днів) |
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Si9433BDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -5A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1223 шт: термін постачання 14-21 дні (днів) |
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SI9433BDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.2A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -6.2A Pulsed drain current: -20A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±12V On-state resistance: 60mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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SI9435BDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.6A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2188 шт: термін постачання 14-21 дні (днів) |
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SI9435BDY-T1-E3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.6A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 2188 шт: термін постачання 14-21 дні (днів) |
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SI9435BDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.7A Pulsed drain current: -30A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 2500 шт |
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SI9926CDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.7A; 3.1W; SO8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 6.7A Power dissipation: 3.1W Case: SO8 Gate-source voltage: ±12V On-state resistance: 22mΩ Mounting: SMD Gate charge: 33nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1650 шт: термін постачання 14-21 дні (днів) |
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SI9926CDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8 Mounting: SMD Power dissipation: 2W Polarisation: unipolar Kind of package: reel; tape Gate charge: 33nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 30A Case: SO8 Drain-source voltage: 20V Drain current: 8A On-state resistance: 18mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
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Si9933CDY-T1-E3 | VISHAY |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -20A Mounting: SMD Drain-source voltage: -20V Drain current: -4A On-state resistance: 94mΩ Type of transistor: P-MOSFET x2 Power dissipation: 3.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 26nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: -20A Case: SO8 кількість в упаковці: 2500 шт |
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SI9933CDY-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 2W; SO8 Case: SO8 Mounting: SMD On-state resistance: 58mΩ Kind of package: reel; tape Power dissipation: 2W Kind of channel: enhanced Type of transistor: P-MOSFET Gate-source voltage: ±12V Drain current: -4A Drain-source voltage: -20V Polarisation: unipolar Gate charge: 8nC кількість в упаковці: 1 шт |
на замовлення 3033 шт: термін постачання 14-21 дні (днів) |
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SI9945BDY-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 20A; 2W; SO8 Power dissipation: 2W Mounting: SMD Kind of package: reel; tape Case: SO8 Drain-source voltage: 60V Drain current: 5.3A On-state resistance: 58mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 20A кількість в упаковці: 1 шт |
на замовлення 12829 шт: термін постачання 14-21 дні (днів) |
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SIA106DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A; 19W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 12A Pulsed drain current: 40A Power dissipation: 19W Gate-source voltage: ±20V On-state resistance: 22.5mΩ Mounting: SMD Gate charge: 13.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SIA108DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 12A; Idm: 30A; 19W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 12A Pulsed drain current: 30A Power dissipation: 19W Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SIA110DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 12A; Idm: 20A; 19W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 12A Pulsed drain current: 20A Power dissipation: 19W Gate-source voltage: ±20V On-state resistance: 72mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SIA112LDJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.8A; Idm: 10A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.8A Pulsed drain current: 10A Power dissipation: 15.6W Gate-source voltage: ±20V On-state resistance: 135mΩ Mounting: SMD Gate charge: 11.8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 6000 шт |
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SIA400EDJ-T1-GE3 | VISHAY | SIA400EDJ-T1-GE3 SMD N channel transistors |
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SIA413ADJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A Mounting: SMD Kind of package: reel; tape Gate charge: 57nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Drain-source voltage: -12V Drain current: -12A On-state resistance: 0.1Ω Type of transistor: P-MOSFET Power dissipation: 19W Polarisation: unipolar кількість в упаковці: 3000 шт |
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SIA413DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -12V Drain current: -12A Pulsed drain current: -40A Power dissipation: 19W Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 57nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIA414DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 40A; 19W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 32nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 40A Power dissipation: 19W Drain-source voltage: 8V Drain current: 12A On-state resistance: 41mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
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SIA416DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11.3A; Idm: 15A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 11.3A Pulsed drain current: 15A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 83mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SIA421DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -35A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -35A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SIA4263DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -32A Kind of package: reel; tape Drain-source voltage: -20V Drain current: -12A On-state resistance: 51.1mΩ Type of transistor: P-MOSFET Power dissipation: 15.6W Polarisation: unipolar Gate charge: 52.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -32A Mounting: SMD кількість в упаковці: 3000 шт |
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SIA4265EDJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Pulsed drain current: -20A Power dissipation: 15.6W Gate-source voltage: ±8V On-state resistance: 67.5mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SIA427ADJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -12A; Idm: -50A; 12W Mounting: SMD Case: PowerPAK® SC70 Kind of package: reel; tape Polarisation: unipolar Gate charge: 50nC Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: -50A Power dissipation: 12W Drain-source voltage: -8V Drain current: -12A On-state resistance: 16mΩ Type of transistor: P-MOSFET кількість в упаковці: 3000 шт |
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SIA429DJT-T1-GE3 | VISHAY | SIA429DJT-T1-GE3 SMD P channel transistors |
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SIA430DJT-T1-GE3 | VISHAY | SIA430DJT-T1-GE3 SMD N channel transistors |
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SIA431DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -12A; Idm: -30A; 12W Case: PowerPAK® SC70 Mounting: SMD Kind of package: reel; tape Drain current: -12A Drain-source voltage: -20V Power dissipation: 12W Polarisation: unipolar Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -30A On-state resistance: 25mΩ Type of transistor: P-MOSFET кількість в упаковці: 3000 шт |
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SIA432DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 12A Pulsed drain current: 30A Power dissipation: 19.2W Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
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SIA433EDJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -12A Pulsed drain current: -50A Power dissipation: 19W Gate-source voltage: ±12V On-state resistance: 65mΩ Mounting: SMD Gate charge: 75nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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SIA436DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 50A; 19W Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Gate charge: 25.2nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±5V Pulsed drain current: 50A Power dissipation: 19W Drain-source voltage: 8V Drain current: 12A On-state resistance: 36mΩ Type of transistor: N-MOSFET кількість в упаковці: 3000 шт |
товар відсутній |
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SIA437DJ-T1-GE3 | VISHAY | SIA437DJ-T1-GE3 SMD P channel transistors |
товар відсутній |
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SIA440DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 50A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 12A Pulsed drain current: 50A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 26mΩ Mounting: SMD Gate charge: 21.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
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SIA441DJ-T1-GE3 | VISHAY | SIA441DJ-T1-GE3 SMD P channel transistors |
товар відсутній |
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SIA445EDJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -12A Pulsed drain current: -50A Power dissipation: 19W Gate-source voltage: ±12V On-state resistance: 30mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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SiA445EDJT-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -20V Drain current: -12A Pulsed drain current: -50A Power dissipation: 19W Gate-source voltage: ±12V On-state resistance: 31mΩ Mounting: SMD Gate charge: 69nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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SIA446DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 7.7A; Idm: 10A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 7.7A Pulsed drain current: 10A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±20V On-state resistance: 177mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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SIA447DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -50A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -12A Pulsed drain current: -50A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±8V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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SIA449DJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -30A; 12W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -12A Pulsed drain current: -30A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 20mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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SIA456DJ-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 2.6A Pulsed drain current: 2A Power dissipation: 12W Case: PowerPAK® SC70 Gate-source voltage: ±16V On-state resistance: 1.38Ω Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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SIA459EDJ-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -40A; 10W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Pulsed drain current: -40A Power dissipation: 10W Case: PowerPAK® SC70 Gate-source voltage: ±12V On-state resistance: 35mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced кількість в упаковці: 3000 шт |
товар відсутній |
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SIA461DJ-T1-GE3 | VISHAY | SIA461DJ-T1-GE3 SMD P channel transistors |
товар відсутній |
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SIA462DJ-T1-GE3 | VISHAY | SIA462DJ-T1-GE3 SMD N channel transistors |
товар відсутній |
SI8499DB-T2-E1 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -16A; Idm: -20A
Mounting: SMD
Technology: TrenchFET®
Drain current: -16A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 0.12Ω
Pulsed drain current: -20A
Power dissipation: 13W
Gate charge: 30nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -16A; Idm: -20A
Mounting: SMD
Technology: TrenchFET®
Drain current: -16A
Kind of channel: enhanced
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
On-state resistance: 0.12Ω
Pulsed drain current: -20A
Power dissipation: 13W
Gate charge: 30nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
SI8800EDB-T2-E1 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.8A; Idm: 15A
Mounting: SMD
Drain-source voltage: 20V
Drain current: 2.8A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8.3nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 15A
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.8A; Idm: 15A
Mounting: SMD
Drain-source voltage: 20V
Drain current: 2.8A
On-state resistance: 0.15Ω
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 8.3nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 15A
кількість в упаковці: 3000 шт
товар відсутній
SI8802DB-T2-E1 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 3.5A; Idm: 15A
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 6.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 15A
Mounting: SMD
Drain-source voltage: 8V
Drain current: 3.5A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 3.5A; Idm: 15A
Kind of package: reel; tape
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 6.5nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 15A
Mounting: SMD
Drain-source voltage: 8V
Drain current: 3.5A
On-state resistance: 135mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI8806DB-T2-E1 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 3.9A; Idm: 20A
Mounting: SMD
On-state resistance: 75mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: 12V
Drain current: 3.9A
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 12V; 3.9A; Idm: 20A
Mounting: SMD
On-state resistance: 75mΩ
Kind of package: reel; tape
Technology: TrenchFET®
Drain-source voltage: 12V
Drain current: 3.9A
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
кількість в упаковці: 3000 шт
товар відсутній
SI8808DB-T2-E1 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 2.5A; Idm: 10A
On-state resistance: 0.165Ω
Mounting: SMD
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 10A
Drain-source voltage: 30V
Drain current: 2.5A
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 2.5A; Idm: 10A
On-state resistance: 0.165Ω
Mounting: SMD
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 10nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 10A
Drain-source voltage: 30V
Drain current: 2.5A
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI8810EDB-T2-E1 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.9A; Idm: 15A
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Kind of package: reel; tape
Gate charge: 8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 15A
Mounting: SMD
Drain-source voltage: 20V
Drain current: 2.9A
On-state resistance: 0.125Ω
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.9A; Idm: 15A
Polarisation: unipolar
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Kind of package: reel; tape
Gate charge: 8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 15A
Mounting: SMD
Drain-source voltage: 20V
Drain current: 2.9A
On-state resistance: 0.125Ω
кількість в упаковці: 3000 шт
товар відсутній
SI8812DB-T2-E1 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 3.2A; Idm: 20A
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 3.2A
On-state resistance: 93mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
Mounting: SMD
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 3.2A; Idm: 20A
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 3.2A
On-state resistance: 93mΩ
Type of transistor: N-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 20A
Mounting: SMD
кількість в упаковці: 3000 шт
товар відсутній
SI8817DB-T2-E1 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.9A; Idm: -15A
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.9W
On-state resistance: 0.32Ω
Polarisation: unipolar
Technology: TrenchFET®
Pulsed drain current: -15A
Gate charge: 19nC
Drain current: -2.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Gate-source voltage: ±8V
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.9A; Idm: -15A
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.9W
On-state resistance: 0.32Ω
Polarisation: unipolar
Technology: TrenchFET®
Pulsed drain current: -15A
Gate charge: 19nC
Drain current: -2.9A
Kind of channel: enhanced
Drain-source voltage: -20V
Gate-source voltage: ±8V
кількість в упаковці: 3000 шт
товар відсутній
SI8819EDB-T2-E1 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -2.9A; Idm: -15A
Mounting: SMD
Technology: TrenchFET®
Drain current: -2.9A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 0.28Ω
Pulsed drain current: -15A
Power dissipation: 0.9W
Gate charge: 17nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -2.9A; Idm: -15A
Mounting: SMD
Technology: TrenchFET®
Drain current: -2.9A
Kind of channel: enhanced
Drain-source voltage: -12V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
On-state resistance: 0.28Ω
Pulsed drain current: -15A
Power dissipation: 0.9W
Gate charge: 17nC
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
SI8821EDB-T2-E1 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.3A; Idm: -15A
Mounting: SMD
Drain-source voltage: -30V
Drain current: -2.3A
On-state resistance: 0.215Ω
Type of transistor: P-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -15A
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.3A; Idm: -15A
Mounting: SMD
Drain-source voltage: -30V
Drain current: -2.3A
On-state resistance: 0.215Ω
Type of transistor: P-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -15A
кількість в упаковці: 3000 шт
товар відсутній
Si8823EDB-T2-E1 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.7A; Idm: -15A
Mounting: SMD
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 335mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -2.7A; Idm: -15A
Mounting: SMD
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 17nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -15A
Drain-source voltage: -20V
Drain current: -2.7A
On-state resistance: 335mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI8824EDB-T2-E1 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.9A; Idm: 15A
Mounting: SMD
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 15A
Drain-source voltage: 20V
Drain current: 2.9A
On-state resistance: 0.175Ω
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 2.9A; Idm: 15A
Mounting: SMD
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 6nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 15A
Drain-source voltage: 20V
Drain current: 2.9A
On-state resistance: 0.175Ω
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SI8902AEDB-T2-E1 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 24V; 11A; Idm: 40A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 11A
Pulsed drain current: 40A
Power dissipation: 5.7W
Gate-source voltage: ±12V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 24V; 11A; Idm: 40A
Type of transistor: N-MOSFET x2
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 24V
Drain current: 11A
Pulsed drain current: 40A
Power dissipation: 5.7W
Gate-source voltage: ±12V
On-state resistance: 37mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SI9407BDY-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3920 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 85.62 грн |
7+ | 45.22 грн |
25+ | 38.04 грн |
31+ | 34.88 грн |
84+ | 32.98 грн |
500+ | 31.71 грн |
SI9407BDY-T1-E3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.7A; Idm: -20A; 3.2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.7A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.7A; Idm: -20A; 3.2W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.7A
Pulsed drain current: -20A
Power dissipation: 3.2W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SI9407BDY-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.6A; 5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.6A
Power dissipation: 5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 22nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 3920 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 85.62 грн |
7+ | 45.22 грн |
25+ | 38.04 грн |
31+ | 34.88 грн |
84+ | 32.98 грн |
500+ | 31.71 грн |
Si9433BDY-T1-E3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1223 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 133.3 грн |
5+ | 70.37 грн |
19+ | 56.02 грн |
51+ | 53.31 грн |
500+ | 51.5 грн |
Si9433BDY-T1-E3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -5A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1223 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 133.3 грн |
5+ | 70.37 грн |
19+ | 56.02 грн |
51+ | 53.31 грн |
500+ | 51.5 грн |
SI9433BDY-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.2A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6.2A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -6.2A
Pulsed drain current: -20A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
SI9435BDY-T1-E3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2188 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 38.92 грн |
10+ | 35.37 грн |
38+ | 27.92 грн |
105+ | 26.38 грн |
2500+ | 25.93 грн |
SI9435BDY-T1-E3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -4.6A; 2.5W; SO8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -4.6A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 2188 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
8+ | 38.92 грн |
10+ | 35.37 грн |
38+ | 27.92 грн |
105+ | 26.38 грн |
2500+ | 25.93 грн |
SI9435BDY-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Pulsed drain current: -30A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -5.7A; Idm: -30A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -5.7A
Pulsed drain current: -30A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 2500 шт
товар відсутній
SI9926CDY-T1-E3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.7A; 3.1W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.7A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 6.7A; 3.1W; SO8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.7A
Power dissipation: 3.1W
Case: SO8
Gate-source voltage: ±12V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 33nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1650 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 76.87 грн |
8+ | 40.16 грн |
25+ | 34.33 грн |
36+ | 29.82 грн |
98+ | 28.01 грн |
500+ | 27.47 грн |
SI9926CDY-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8
Mounting: SMD
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 20V
Drain current: 8A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 8A; Idm: 30A; 2W; SO8
Mounting: SMD
Power dissipation: 2W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 33nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 30A
Case: SO8
Drain-source voltage: 20V
Drain current: 8A
On-state resistance: 18mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
товар відсутній
Si9933CDY-T1-E3 |
Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Mounting: SMD
Drain-source voltage: -20V
Drain current: -4A
On-state resistance: 94mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Case: SO8
кількість в упаковці: 2500 шт
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; TrenchFET®; unipolar; -20V; -4A; Idm: -20A
Mounting: SMD
Drain-source voltage: -20V
Drain current: -4A
On-state resistance: 94mΩ
Type of transistor: P-MOSFET x2
Power dissipation: 3.1W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 26nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -20A
Case: SO8
кількість в упаковці: 2500 шт
товар відсутній
SI9933CDY-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 2W; SO8
Case: SO8
Mounting: SMD
On-state resistance: 58mΩ
Kind of package: reel; tape
Power dissipation: 2W
Kind of channel: enhanced
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Drain current: -4A
Drain-source voltage: -20V
Polarisation: unipolar
Gate charge: 8nC
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4A; 2W; SO8
Case: SO8
Mounting: SMD
On-state resistance: 58mΩ
Kind of package: reel; tape
Power dissipation: 2W
Kind of channel: enhanced
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Drain current: -4A
Drain-source voltage: -20V
Polarisation: unipolar
Gate charge: 8nC
кількість в упаковці: 1 шт
на замовлення 3033 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
6+ | 48.65 грн |
44+ | 25.15 грн |
121+ | 22.9 грн |
500+ | 22.23 грн |
1000+ | 22.05 грн |
SI9945BDY-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 20A; 2W; SO8
Power dissipation: 2W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 58mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 20A; 2W; SO8
Power dissipation: 2W
Mounting: SMD
Kind of package: reel; tape
Case: SO8
Drain-source voltage: 60V
Drain current: 5.3A
On-state resistance: 58mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 20A
кількість в упаковці: 1 шт
на замовлення 12829 шт:
термін постачання 14-21 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 88.54 грн |
5+ | 77.12 грн |
22+ | 48.34 грн |
25+ | 48.25 грн |
61+ | 45.63 грн |
2500+ | 44.36 грн |
SIA106DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 22.5mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 12A; Idm: 40A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 12A
Pulsed drain current: 40A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 22.5mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIA108DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 12A; Idm: 30A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 12A; Idm: 30A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIA110DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 12A; Idm: 20A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 20A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 12A; Idm: 20A; 19W
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12A
Pulsed drain current: 20A
Power dissipation: 19W
Gate-source voltage: ±20V
On-state resistance: 72mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIA112LDJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.8A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.8A
Pulsed drain current: 10A
Power dissipation: 15.6W
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 6000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 8.8A; Idm: 10A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.8A
Pulsed drain current: 10A
Power dissipation: 15.6W
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 6000 шт
товар відсутній
SIA413ADJ-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A
Mounting: SMD
Kind of package: reel; tape
Gate charge: 57nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 19W
Polarisation: unipolar
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A
Mounting: SMD
Kind of package: reel; tape
Gate charge: 57nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -40A
Drain-source voltage: -12V
Drain current: -12A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 19W
Polarisation: unipolar
кількість в упаковці: 3000 шт
товар відсутній
SIA413DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12A
Pulsed drain current: -40A
Power dissipation: 19W
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -12V; -12A; Idm: -40A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12A
Pulsed drain current: -40A
Power dissipation: 19W
Gate-source voltage: ±8V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIA414DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 40A; 19W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 40A
Power dissipation: 19W
Drain-source voltage: 8V
Drain current: 12A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 40A; 19W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 32nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 40A
Power dissipation: 19W
Drain-source voltage: 8V
Drain current: 12A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SIA416DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.3A; Idm: 15A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.3A
Pulsed drain current: 15A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11.3A; Idm: 15A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11.3A
Pulsed drain current: 15A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 83mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIA421DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -35A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -35A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -35A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -35A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIA4263DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -32A
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -12A
On-state resistance: 51.1mΩ
Type of transistor: P-MOSFET
Power dissipation: 15.6W
Polarisation: unipolar
Gate charge: 52.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -32A
Mounting: SMD
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -32A
Kind of package: reel; tape
Drain-source voltage: -20V
Drain current: -12A
On-state resistance: 51.1mΩ
Type of transistor: P-MOSFET
Power dissipation: 15.6W
Polarisation: unipolar
Gate charge: 52.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -32A
Mounting: SMD
кількість в упаковці: 3000 шт
товар відсутній
SIA4265EDJ-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -20A
Power dissipation: 15.6W
Gate-source voltage: ±8V
On-state resistance: 67.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -9A; Idm: -20A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -20A
Power dissipation: 15.6W
Gate-source voltage: ±8V
On-state resistance: 67.5mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIA427ADJ-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -12A; Idm: -50A; 12W
Mounting: SMD
Case: PowerPAK® SC70
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 50nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -50A
Power dissipation: 12W
Drain-source voltage: -8V
Drain current: -12A
On-state resistance: 16mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -12A; Idm: -50A; 12W
Mounting: SMD
Case: PowerPAK® SC70
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 50nC
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -50A
Power dissipation: 12W
Drain-source voltage: -8V
Drain current: -12A
On-state resistance: 16mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SIA431DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; Idm: -30A; 12W
Case: PowerPAK® SC70
Mounting: SMD
Kind of package: reel; tape
Drain current: -12A
Drain-source voltage: -20V
Power dissipation: 12W
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -30A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12A; Idm: -30A; 12W
Case: PowerPAK® SC70
Mounting: SMD
Kind of package: reel; tape
Drain current: -12A
Drain-source voltage: -20V
Power dissipation: 12W
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -30A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SIA432DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 19.2W
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 12A; Idm: 30A
Type of transistor: N-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12A
Pulsed drain current: 30A
Power dissipation: 19.2W
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIA433EDJ-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 19W
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 19W
Gate-source voltage: ±12V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 75nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIA436DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 50A; 19W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 25.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 50A
Power dissipation: 19W
Drain-source voltage: 8V
Drain current: 12A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 50A; 19W
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 25.2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: 50A
Power dissipation: 19W
Drain-source voltage: 8V
Drain current: 12A
On-state resistance: 36mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 3000 шт
товар відсутній
SIA440DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 50A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 50A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 26mΩ
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIA445EDJ-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 19W
Gate-source voltage: ±12V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 19W
Gate-source voltage: ±12V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SiA445EDJT-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 19W
Gate-source voltage: ±12V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -12A; Idm: -50A
Type of transistor: P-MOSFET
Technology: TrenchFET®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 19W
Gate-source voltage: ±12V
On-state resistance: 31mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIA446DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 7.7A; Idm: 10A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 7.7A
Pulsed drain current: 10A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 177mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 7.7A; Idm: 10A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 7.7A
Pulsed drain current: 10A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±20V
On-state resistance: 177mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIA447DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -50A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -12A; Idm: -50A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -12A
Pulsed drain current: -50A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±8V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIA449DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -30A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -30A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -30A; 12W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -12A
Pulsed drain current: -30A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
SIA456DJ-T1-GE3 |
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 2A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±16V
On-state resistance: 1.38Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 2.6A
Pulsed drain current: 2A
Power dissipation: 12W
Case: PowerPAK® SC70
Gate-source voltage: ±16V
On-state resistance: 1.38Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній
SIA459EDJ-T1-GE3 |
Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -40A; 10W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -40A
Power dissipation: 10W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -40A; 10W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -40A
Power dissipation: 10W
Case: PowerPAK® SC70
Gate-source voltage: ±12V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 3000 шт
товар відсутній