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W632GU8NB09I W632GU8NB09I Winbond Electronics w632gu8nb_a01.pdf Description: IC DRAM 2GBIT PARALLEL 78VFBGA
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W632GU8NB09I TR W632GU8NB09I TR Winbond Electronics w632gu8nb_a02.pdf Description: IC DRAM 2GBIT PAR 78VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 1.066 GHz
Memory Format: DRAM
Supplier Device Package: 78-VFBGA (8x10.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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W632GU8NB-09 TR W632GU8NB-09 TR Winbond Electronics w632gu8nb_a02.pdf Description: IC DRAM 2GBIT PAR 78VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 1.066 GHz
Memory Format: DRAM
Supplier Device Package: 78-VFBGA (8x10.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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W634GU6NB-12 W634GU6NB-12 Winbond Electronics W634GU6NB_A01.pdf Description: IC DRAM 4GBIT 96-VFBGA
Packaging: Tray
Package / Case: 96-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-VFBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
на замовлення 725 шт:
термін постачання 21-31 дні (днів)
1+631.42 грн
10+539.71 грн
25+514.65 грн
40+471.34 грн
190+450.14 грн
В кошику  од. на суму  грн.
W634GU6QB-09 Winbond Electronics W634GU6QB_RevA01_10-20-21.pdf Description: IC DRAM 4GBIT PAR 96VFBGA
Packaging: Tray
Package / Case: 96-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 1.06 GHz
Memory Format: DRAM
Supplier Device Package: 96-VFBGA (7.5x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
на замовлення 198 шт:
термін постачання 21-31 дні (днів)
1+578.80 грн
10+508.91 грн
25+499.13 грн
40+465.04 грн
198+417.28 грн
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W63AH2NBVABE Winbond Electronics W63AHxNB_VFBGA178_PKG_datasheet_A01-003_20191203.pdf Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tray
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVABE TR W63AH2NBVABE TR Winbond Electronics W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVABI W63AH2NBVABI Winbond Electronics W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tray
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVABI TR W63AH2NBVABI TR Winbond Electronics W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVACE W63AH2NBVACE Winbond Electronics W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tray
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVACE TR W63AH2NBVACE TR Winbond Electronics W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVACI W63AH2NBVACI Winbond Electronics W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tray
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVACI TR W63AH2NBVACI TR Winbond Electronics W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVADE Winbond Electronics W63AHxNB_VFBGA178_PKG_datasheet_A01-003_20191203.pdf Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tray
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 1.066 GHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVADE TR W63AH2NBVADE TR Winbond Electronics W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 1.066 GHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVADI W63AH2NBVADI Winbond Electronics W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tray
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 1.066 GHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVADI TR W63AH2NBVADI TR Winbond Electronics W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 1.066 GHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH6NBVADE Winbond Electronics W63AHxNB_VFBGA178_PKG_datasheet_A01-003_20191203.pdf Description: 1GB LPDDR3, X16, 1066MHZ
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W63AH6NBVADI W63AH6NBVADI Winbond Electronics W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tray
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 1.066 GHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 181 шт:
термін постачання 21-31 дні (днів)
1+514.68 грн
10+452.62 грн
25+443.96 грн
40+413.62 грн
В кошику  од. на суму  грн.
W63CH6MBVACE Winbond Electronics w63chxmbv_vfbga178_datasheet_a01-001_20181123.pdf Description: IC DRAM 4GBIT PAR 178VFBGA
Packaging: Tray
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
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W66AP6NBHAFJ W66AP6NBHAFJ Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: IC DRAM 1GBIT LVSTL 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBHAFJ TR W66AP6NBHAFJ TR Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: IC DRAM 1GBIT LVSTL 100VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBHAGJ W66AP6NBHAGJ Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: IC DRAM 1GBIT LVSTL 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.867 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBHAGJ TR W66AP6NBHAGJ TR Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: IC DRAM 1GBIT LVSTL 100VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.867 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBHAHJ W66AP6NBHAHJ Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: IC DRAM 1GBIT LVSTL 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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В кошику  од. на суму  грн.
W66AP6NBHAHJ TR W66AP6NBHAHJ TR Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: IC DRAM 1GBIT LVSTL 100VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBQAFJ W66AP6NBQAFJ Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: IC DRAM 1GBIT LVSTL 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
на замовлення 127 шт:
термін постачання 21-31 дні (днів)
1+427.53 грн
10+314.63 грн
25+290.34 грн
В кошику  од. на суму  грн.
W66AP6NBQAFJ TR Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: IC DRAM 1GBIT LVSTL 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBQAGJ Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: IC DRAM 1GBIT LVSTL 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.867 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBQAGJ TR Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: IC DRAM 1GBIT LVSTL 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.867 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBQAHJ Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: IC DRAM 1GBIT LVSTL 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBQAHJ TR Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: IC DRAM 1GBIT LVSTL 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBUAFJ W66AP6NBUAFJ Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: IC DRAM 1GBIT LVSTL 200WFBGA
Packaging: Tray
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBUAFJ TR W66AP6NBUAFJ TR Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: IC DRAM 1GBIT LVSTL 200WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBUAGJ W66AP6NBUAGJ Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: IC DRAM 1GBIT LVSTL 200WFBGA
Packaging: Tray
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.867 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBUAGJ TR W66AP6NBUAGJ TR Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: IC DRAM 1GBIT LVSTL 200WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.867 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBUAHJ W66AP6NBUAHJ Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: IC DRAM 1GBIT LVSTL 200WFBGA
Packaging: Tray
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBUAHJ TR W66AP6NBUAHJ TR Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: IC DRAM 1GBIT LVSTL 200WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AQ6NBHAHJ Winbond Electronics levelOne.jsp?__locale=en&DocNo=DA00-W66AQ6NBU Description: 1GB LPDDR4X, X16, 2133MHZ, -40C~
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_06
Access Time: 3.6 ns
Memory Organization: 64M x 16
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В кошику  од. на суму  грн.
W66AQ6NBHAHJ TR Winbond Electronics levelOne.jsp?__locale=en&DocNo=DA00-W66AQ6NBU Description: 1GB LPDDR4X, X16, 2133MHZ, -40C~
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_06
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AQ6NBQAHJ Winbond Electronics levelOne.jsp?__locale=en&DocNo=DA00-W66AQ6NBU Description: 1GB LPDDR4X, X16, 2133MHZ, -40C~
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_06
Access Time: 3.6 ns
Memory Organization: 64M x 16
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В кошику  од. на суму  грн.
W66AQ6NBQAHJ TR Winbond Electronics levelOne.jsp?__locale=en&DocNo=DA00-W66AQ6NBU Description: 1GB LPDDR4X, X16, 2133MHZ, -40C~
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_06
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AQ6NBUAHJ Winbond Electronics levelOne.jsp?__locale=en&DocNo=DA00-W66AQ6NBU Description: 1GB LPDDR4X, X16, 2133MHZ, -40C~
Packaging: Tray
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_06
Access Time: 3.6 ns
Memory Organization: 64M x 16
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В кошику  од. на суму  грн.
W66AQ6NBUAHJ TR Winbond Electronics levelOne.jsp?__locale=en&DocNo=DA00-W66AQ6NBU Description: 1GB LPDDR4X, X16, 2133MHZ, -40C~
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_06
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66BM6NBUAFJ W66BM6NBUAFJ Winbond Electronics W66xMxNx_LPDDR4X_WFBGA200_SDP_DDP_datasheet_A01-003_20190918.pdf Description: 2GB LPDDR4X, X16, 1600MHZ, -40C~
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W66BM6NBUAFJ TR W66BM6NBUAFJ TR Winbond Electronics W66xMxNx_LPDDR4X_WFBGA200_SDP_DDP_datasheet_A01-003_20190918.pdf Description: 2GB LPDDR4X, X16, 1600MHZ, -40C~
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В кошику  од. на суму  грн.
W66BM6NBUAGJ W66BM6NBUAGJ Winbond Electronics W66xMxNx_LPDDR4X_WFBGA200_SDP_DDP_datasheet_A01-003_20190918.pdf Description: 2GB LPDDR4X, X16, 1866MHZ, -40C~
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W66BM6NBUAGJ TR W66BM6NBUAGJ TR Winbond Electronics W66xMxNx_LPDDR4X_WFBGA200_SDP_DDP_datasheet_A01-003_20190918.pdf Description: 2GB LPDDR4X, X16, 1866MHZ, -40C~
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W66BM6NBUAHJ W66BM6NBUAHJ Winbond Electronics W66xMxNx_LPDDR4X_WFBGA200_SDP_DDP_datasheet_A01-003_20190918.pdf Description: 2GB LPDDR4X, X16, 2133MHZ, -40C~
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W66BM6NBUAHJ TR W66BM6NBUAHJ TR Winbond Electronics W66xMxNx_LPDDR4X_WFBGA200_SDP_DDP_datasheet_A01-003_20190918.pdf Description: 2GB LPDDR4X, X16, 2133MHZ, -40C~
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W66BP2NQQAHJ Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: 2GB LPDDR4, DDP, X32, 2133MHZ, -
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 32
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W66BP2NQQAHJ TR Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: 2GB LPDDR4, DDP, X32, 2133MHZ, -
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 32
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W66BP2NQUAHJ Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: 2GB LPDDR4, DDP, X32, 2133MHZ, -
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 32
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W66BP2NQUAHJ TR Winbond Electronics levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU Description: 2GB LPDDR4, DDP, X32, 2133MHZ, -
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 32
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W66BP6NBHAHJ Winbond Electronics levelOne.jsp?__locale=en&DocNo=DA00-W66BP6NB Description: 2GB LPDDR4, X16, 2133MHZ, -40C~1
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 128M x 16
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W66BP6NBHAHJ TR Winbond Electronics levelOne.jsp?__locale=en&DocNo=DA00-W66BP6NB Description: 2GB LPDDR4, X16, 2133MHZ, -40C~1
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 128M x 16
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W66BP6NBQAHJ Winbond Electronics levelOne.jsp?__locale=en&DocNo=DA00-W66BP6NB Description: 2GB LPDDR4, X16, 2133MHZ, -40C~1
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 128M x 16
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W66BP6NBQAHJ TR Winbond Electronics levelOne.jsp?__locale=en&DocNo=DA00-W66BP6NB Description: 2GB LPDDR4, X16, 2133MHZ, -40C~1
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 128M x 16
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W66BQ2NQQAHJ Winbond Electronics levelOne.jsp?__locale=en&DocNo=DA00-W66AQ6NBU Description: 2GB LPDDR4X, DDP, X32, 2133MHZ,
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_06
Access Time: 3.6 ns
Memory Organization: 64M x 32
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W66BQ2NQQAHJ TR Winbond Electronics levelOne.jsp?__locale=en&DocNo=DA00-W66AQ6NBU Description: 2GB LPDDR4X, DDP, X32, 2133MHZ,
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_06
Access Time: 3.6 ns
Memory Organization: 64M x 32
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W632GU8NB09I w632gu8nb_a01.pdf
W632GU8NB09I
Виробник: Winbond Electronics
Description: IC DRAM 2GBIT PARALLEL 78VFBGA
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W632GU8NB09I TR w632gu8nb_a02.pdf
W632GU8NB09I TR
Виробник: Winbond Electronics
Description: IC DRAM 2GBIT PAR 78VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 1.066 GHz
Memory Format: DRAM
Supplier Device Package: 78-VFBGA (8x10.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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W632GU8NB-09 TR w632gu8nb_a02.pdf
W632GU8NB-09 TR
Виробник: Winbond Electronics
Description: IC DRAM 2GBIT PAR 78VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 1.066 GHz
Memory Format: DRAM
Supplier Device Package: 78-VFBGA (8x10.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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W634GU6NB-12 W634GU6NB_A01.pdf
W634GU6NB-12
Виробник: Winbond Electronics
Description: IC DRAM 4GBIT 96-VFBGA
Packaging: Tray
Package / Case: 96-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-VFBGA (9x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
на замовлення 725 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+631.42 грн
10+539.71 грн
25+514.65 грн
40+471.34 грн
190+450.14 грн
В кошику  од. на суму  грн.
W634GU6QB-09 W634GU6QB_RevA01_10-20-21.pdf
Виробник: Winbond Electronics
Description: IC DRAM 4GBIT PAR 96VFBGA
Packaging: Tray
Package / Case: 96-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 1.06 GHz
Memory Format: DRAM
Supplier Device Package: 96-VFBGA (7.5x13)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
на замовлення 198 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+578.80 грн
10+508.91 грн
25+499.13 грн
40+465.04 грн
198+417.28 грн
В кошику  од. на суму  грн.
W63AH2NBVABE W63AHxNB_VFBGA178_PKG_datasheet_A01-003_20191203.pdf
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tray
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVABE TR W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf
W63AH2NBVABE TR
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVABI W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf
W63AH2NBVABI
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tray
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVABI TR W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf
W63AH2NBVABI TR
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVACE W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf
W63AH2NBVACE
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tray
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVACE TR W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf
W63AH2NBVACE TR
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVACI W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf
W63AH2NBVACI
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tray
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVACI TR W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf
W63AH2NBVACI TR
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVADE W63AHxNB_VFBGA178_PKG_datasheet_A01-003_20191203.pdf
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tray
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 1.066 GHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVADE TR W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf
W63AH2NBVADE TR
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 1.066 GHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVADI W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf
W63AH2NBVADI
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tray
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 1.066 GHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH2NBVADI TR W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf
W63AH2NBVADI TR
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 1.066 GHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 32M x 32
DigiKey Programmable: Not Verified
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W63AH6NBVADE W63AHxNB_VFBGA178_PKG_datasheet_A01-003_20191203.pdf
Виробник: Winbond Electronics
Description: 1GB LPDDR3, X16, 1066MHZ
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W63AH6NBVADI W63AHxNB_VFBGA178_PKG_datasheet_A01-005_20200728.pdf
W63AH6NBVADI
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT HSUL 12 178VFBGA
Packaging: Tray
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 1.066 GHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Part Status: Active
Write Cycle Time - Word, Page: 15ns
Memory Interface: HSUL_12
Access Time: 5.5 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
на замовлення 181 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+514.68 грн
10+452.62 грн
25+443.96 грн
40+413.62 грн
В кошику  од. на суму  грн.
W63CH6MBVACE w63chxmbv_vfbga178_datasheet_a01-001_20181123.pdf
Виробник: Winbond Electronics
Description: IC DRAM 4GBIT PAR 178VFBGA
Packaging: Tray
Package / Case: 178-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -25°C ~ 85°C (TC)
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR3
Clock Frequency: 933 MHz
Memory Format: DRAM
Supplier Device Package: 178-VFBGA (11x11.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
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W66AP6NBHAFJ levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
W66AP6NBHAFJ
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBHAFJ TR levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
W66AP6NBHAFJ TR
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 100VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBHAGJ levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
W66AP6NBHAGJ
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.867 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBHAGJ TR levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
W66AP6NBHAGJ TR
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 100VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.867 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBHAHJ levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
W66AP6NBHAHJ
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 100VFBGA
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBHAHJ TR levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
W66AP6NBHAHJ TR
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 100VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBQAFJ levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
W66AP6NBQAFJ
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
на замовлення 127 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+427.53 грн
10+314.63 грн
25+290.34 грн
В кошику  од. на суму  грн.
W66AP6NBQAFJ TR levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBQAGJ levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.867 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBQAGJ TR levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.867 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBQAHJ levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 200TFBGA
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBQAHJ TR levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 200TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBUAFJ levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
W66AP6NBUAFJ
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 200WFBGA
Packaging: Tray
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBUAFJ TR levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
W66AP6NBUAFJ TR
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 200WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBUAGJ levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
W66AP6NBUAGJ
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 200WFBGA
Packaging: Tray
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.867 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBUAGJ TR levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
W66AP6NBUAGJ TR
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 200WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.867 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AP6NBUAHJ levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
W66AP6NBUAHJ
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 200WFBGA
Packaging: Tray
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
товару немає в наявності
В кошику  од. на суму  грн.
W66AP6NBUAHJ TR levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
W66AP6NBUAHJ TR
Виробник: Winbond Electronics
Description: IC DRAM 1GBIT LVSTL 200WFBGA
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AQ6NBHAHJ levelOne.jsp?__locale=en&DocNo=DA00-W66AQ6NBU
Виробник: Winbond Electronics
Description: 1GB LPDDR4X, X16, 2133MHZ, -40C~
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_06
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AQ6NBHAHJ TR levelOne.jsp?__locale=en&DocNo=DA00-W66AQ6NBU
Виробник: Winbond Electronics
Description: 1GB LPDDR4X, X16, 2133MHZ, -40C~
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_06
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AQ6NBQAHJ levelOne.jsp?__locale=en&DocNo=DA00-W66AQ6NBU
Виробник: Winbond Electronics
Description: 1GB LPDDR4X, X16, 2133MHZ, -40C~
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_06
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66AQ6NBQAHJ TR levelOne.jsp?__locale=en&DocNo=DA00-W66AQ6NBU
Виробник: Winbond Electronics
Description: 1GB LPDDR4X, X16, 2133MHZ, -40C~
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_06
Access Time: 3.6 ns
Memory Organization: 64M x 16
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В кошику  од. на суму  грн.
W66AQ6NBUAHJ levelOne.jsp?__locale=en&DocNo=DA00-W66AQ6NBU
Виробник: Winbond Electronics
Description: 1GB LPDDR4X, X16, 2133MHZ, -40C~
Packaging: Tray
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_06
Access Time: 3.6 ns
Memory Organization: 64M x 16
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В кошику  од. на суму  грн.
W66AQ6NBUAHJ TR levelOne.jsp?__locale=en&DocNo=DA00-W66AQ6NBU
Виробник: Winbond Electronics
Description: 1GB LPDDR4X, X16, 2133MHZ, -40C~
Packaging: Tape & Reel (TR)
Package / Case: 200-WFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-WFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_06
Access Time: 3.6 ns
Memory Organization: 64M x 16
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W66BM6NBUAFJ W66xMxNx_LPDDR4X_WFBGA200_SDP_DDP_datasheet_A01-003_20190918.pdf
W66BM6NBUAFJ
Виробник: Winbond Electronics
Description: 2GB LPDDR4X, X16, 1600MHZ, -40C~
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W66BM6NBUAFJ TR W66xMxNx_LPDDR4X_WFBGA200_SDP_DDP_datasheet_A01-003_20190918.pdf
W66BM6NBUAFJ TR
Виробник: Winbond Electronics
Description: 2GB LPDDR4X, X16, 1600MHZ, -40C~
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W66BM6NBUAGJ W66xMxNx_LPDDR4X_WFBGA200_SDP_DDP_datasheet_A01-003_20190918.pdf
W66BM6NBUAGJ
Виробник: Winbond Electronics
Description: 2GB LPDDR4X, X16, 1866MHZ, -40C~
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W66BM6NBUAGJ TR W66xMxNx_LPDDR4X_WFBGA200_SDP_DDP_datasheet_A01-003_20190918.pdf
W66BM6NBUAGJ TR
Виробник: Winbond Electronics
Description: 2GB LPDDR4X, X16, 1866MHZ, -40C~
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W66BM6NBUAHJ W66xMxNx_LPDDR4X_WFBGA200_SDP_DDP_datasheet_A01-003_20190918.pdf
W66BM6NBUAHJ
Виробник: Winbond Electronics
Description: 2GB LPDDR4X, X16, 2133MHZ, -40C~
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В кошику  од. на суму  грн.
W66BM6NBUAHJ TR W66xMxNx_LPDDR4X_WFBGA200_SDP_DDP_datasheet_A01-003_20190918.pdf
W66BM6NBUAHJ TR
Виробник: Winbond Electronics
Description: 2GB LPDDR4X, X16, 2133MHZ, -40C~
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W66BP2NQQAHJ levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
Виробник: Winbond Electronics
Description: 2GB LPDDR4, DDP, X32, 2133MHZ, -
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 32
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W66BP2NQQAHJ TR levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
Виробник: Winbond Electronics
Description: 2GB LPDDR4, DDP, X32, 2133MHZ, -
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 32
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W66BP2NQUAHJ levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
Виробник: Winbond Electronics
Description: 2GB LPDDR4, DDP, X32, 2133MHZ, -
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 32
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W66BP2NQUAHJ TR levelOne.jsp?__locale=en_TW&DocNo=DA00-W66AP6NBU
Виробник: Winbond Electronics
Description: 2GB LPDDR4, DDP, X32, 2133MHZ, -
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 64M x 32
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W66BP6NBHAHJ levelOne.jsp?__locale=en&DocNo=DA00-W66BP6NB
Виробник: Winbond Electronics
Description: 2GB LPDDR4, X16, 2133MHZ, -40C~1
Packaging: Tray
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 128M x 16
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W66BP6NBHAHJ TR levelOne.jsp?__locale=en&DocNo=DA00-W66BP6NB
Виробник: Winbond Electronics
Description: 2GB LPDDR4, X16, 2133MHZ, -40C~1
Packaging: Tape & Reel (TR)
Package / Case: 100-VFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 100-VFBGA (10x7.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 128M x 16
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W66BP6NBQAHJ levelOne.jsp?__locale=en&DocNo=DA00-W66BP6NB
Виробник: Winbond Electronics
Description: 2GB LPDDR4, X16, 2133MHZ, -40C~1
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 128M x 16
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W66BP6NBQAHJ TR levelOne.jsp?__locale=en&DocNo=DA00-W66BP6NB
Виробник: Winbond Electronics
Description: 2GB LPDDR4, X16, 2133MHZ, -40C~1
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_11
Access Time: 3.6 ns
Memory Organization: 128M x 16
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W66BQ2NQQAHJ levelOne.jsp?__locale=en&DocNo=DA00-W66AQ6NBU
Виробник: Winbond Electronics
Description: 2GB LPDDR4X, DDP, X32, 2133MHZ,
Packaging: Tray
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_06
Access Time: 3.6 ns
Memory Organization: 64M x 32
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В кошику  од. на суму  грн.
W66BQ2NQQAHJ TR levelOne.jsp?__locale=en&DocNo=DA00-W66AQ6NBU
Виробник: Winbond Electronics
Description: 2GB LPDDR4X, DDP, X32, 2133MHZ,
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 2.133 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL_06
Access Time: 3.6 ns
Memory Organization: 64M x 32
товару немає в наявності
В кошику  од. на суму  грн.
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