Продукція > XSEMI CORPORATION > Всі товари виробника XSEMI CORPORATION (6) > Сторінка 1 з 1

Виробник: XSemi Corporation
Description: MOSFET N-CH 30V 63.5A PMPAK-5X6
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PMPAK® 5 x 6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)

Виробник: XSemi Corporation
Description: MOSFET N-CH 30V 63.5A PMPAK-5X6
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PMPAK® 5 x 6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 5W (Ta), 50W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 32.8A (Ta), 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Tape & Reel (TR)

Виробник: XSemi Corporation
Description: MOSFET N-CH 40V 33.8A PMPAK-5X6
Power Dissipation (Max): 5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Input Capacitance (Ciss) (Max) @ Vds: 9056 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PMPAK® 5 x 6
Vgs(th) (Max) @ Id: 5V @ 250µA
Packaging: Tape & Reel (TR)

Виробник: XSemi Corporation
Description: MOSFET N-CH 40V 33.8A PMPAK-5X6
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PMPAK® 5 x 6
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 37.5A (Ta), 170A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 9056 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V

Виробник: XSemi Corporation
Description: MOSFET N-CH 40V 75A TO-252
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33.8A (Ta), 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.55mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PMPAK® 5 x 6
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 20 V

Виробник: XSemi Corporation
Description: MOSFET N-CH 40V 75A TO-252
Input Capacitance (Ciss) (Max) @ Vds: 6080 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PMPAK® 5 x 6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 5W (Ta), 69.4W (Tc)
Rds On (Max) @ Id, Vgs: 2.55mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 33.8A (Ta), 125A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Packaging: Tape & Reel (TR)