Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4040) > Сторінка 2 з 68
| Фото | Назва | Виробник | Інформація |
Доступність |
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| 1N5614 | MICROCHIP (MICROSEMI) |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us Type of diode: rectifying Max. off-state voltage: 200V Max. forward impulse current: 30A Semiconductor structure: single diode Mounting: THT Kind of package: tape Load current: 1A Reverse recovery time: 2µs Max. forward voltage: 1.3V |
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| 1N5614 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us Type of diode: rectifying Max. off-state voltage: 200V Max. forward impulse current: 30A Semiconductor structure: single diode Mounting: THT Kind of package: tape Load current: 1A Reverse recovery time: 2µs Max. forward voltage: 1.3V кількість в упаковці: 1 шт |
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| 1N5615 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 25A Max. forward voltage: 1.6V Reverse recovery time: 150ns |
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| 1N5615 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 200V Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 25A Max. forward voltage: 1.6V Reverse recovery time: 150ns кількість в упаковці: 1 шт |
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| 1N5617 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 25A Max. forward voltage: 1.6V Reverse recovery time: 150ns |
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| 1N5617 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 400V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.4kV Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 25A Max. forward voltage: 1.6V Reverse recovery time: 150ns кількість в упаковці: 1 шт |
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| 1N5619 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 250ns Mounting: THT Max. forward impulse current: 25A Kind of package: tape Type of diode: rectifying Max. off-state voltage: 0.6kV Max. forward voltage: 1.6V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 250ns |
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| 1N5619 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 250ns Mounting: THT Max. forward impulse current: 25A Kind of package: tape Type of diode: rectifying Max. off-state voltage: 0.6kV Max. forward voltage: 1.6V Load current: 1A Semiconductor structure: single diode Reverse recovery time: 250ns кількість в упаковці: 1 шт |
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| 1N5620 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 30A Max. forward voltage: 1.3V Reverse recovery time: 2µs |
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| 1N5620 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.8kV Load current: 1A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 30A Max. forward voltage: 1.3V Reverse recovery time: 2µs кількість в упаковці: 1 шт |
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| 1N5629A | MICROCHIP (MICROSEMI) |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; ±5%; DO13 Max. off-state voltage: 5.8V Semiconductor structure: unidirectional Max. forward impulse current: 143A Breakdown voltage: 6.8V Leakage current: 1mA Type of diode: TVS Peak pulse power dissipation: 1.5kW Mounting: THT Case: DO13 Tolerance: ±5% |
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| 1N5629A | MICROCHIP (MICROSEMI) |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; ±5%; DO13 Max. off-state voltage: 5.8V Semiconductor structure: unidirectional Max. forward impulse current: 143A Breakdown voltage: 6.8V Leakage current: 1mA Type of diode: TVS Peak pulse power dissipation: 1.5kW Mounting: THT Case: DO13 Tolerance: ±5% кількість в упаковці: 100 шт |
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| 1N5635A | MICROCHIP (MICROSEMI) |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; ±5%; DO13 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10.2V Breakdown voltage: 12V Max. forward impulse current: 90A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO13 Mounting: THT Leakage current: 5µA |
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| 1N5635A | MICROCHIP (MICROSEMI) |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; ±5%; DO13 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 10.2V Breakdown voltage: 12V Max. forward impulse current: 90A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO13 Mounting: THT Leakage current: 5µA кількість в упаковці: 100 шт |
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| 1N5647A | MICROCHIP (MICROSEMI) |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 39V; 28A; unidirectional; ±5%; DO13 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 28A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO13 Mounting: THT Leakage current: 5µA |
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| 1N5647A | MICROCHIP (MICROSEMI) |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 39V; 28A; unidirectional; ±5%; DO13 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 33.3V Breakdown voltage: 39V Max. forward impulse current: 28A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO13 Mounting: THT Leakage current: 5µA кількість в упаковці: 100 шт |
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| 1N5648A | MICROCHIP (MICROSEMI) |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 43V; 25.3A; unidirectional; ±5%; DO13 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36.8V Breakdown voltage: 43V Max. forward impulse current: 25.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO13 Mounting: THT Leakage current: 5µA |
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| 1N5648A | MICROCHIP (MICROSEMI) |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 43V; 25.3A; unidirectional; ±5%; DO13 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 36.8V Breakdown voltage: 43V Max. forward impulse current: 25.3A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO13 Mounting: THT Leakage current: 5µA кількість в упаковці: 100 шт |
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| 1N5652A | MICROCHIP (MICROSEMI) |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 62V; 17.7A; unidirectional; ±5%; DO13 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 53V Breakdown voltage: 62V Max. forward impulse current: 17.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO13 Mounting: THT Leakage current: 5µA |
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| 1N5652A | MICROCHIP (MICROSEMI) |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 62V; 17.7A; unidirectional; ±5%; DO13 Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 53V Breakdown voltage: 62V Max. forward impulse current: 17.7A Semiconductor structure: unidirectional Tolerance: ±5% Case: DO13 Mounting: THT Leakage current: 5µA кількість в упаковці: 100 шт |
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| 1N5655A | MICROCHIP (MICROSEMI) |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 82V; 13.3A; unidirectional; ±5%; DO13 Case: DO13 Mounting: THT Semiconductor structure: unidirectional Max. off-state voltage: 70.1V Peak pulse power dissipation: 1.5kW Tolerance: ±5% Max. forward impulse current: 13.3A Breakdown voltage: 82V Leakage current: 5µA Type of diode: TVS |
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| 1N5655A | MICROCHIP (MICROSEMI) |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 82V; 13.3A; unidirectional; ±5%; DO13 Case: DO13 Mounting: THT Semiconductor structure: unidirectional Max. off-state voltage: 70.1V Peak pulse power dissipation: 1.5kW Tolerance: ±5% Max. forward impulse current: 13.3A Breakdown voltage: 82V Leakage current: 5µA Type of diode: TVS кількість в упаковці: 100 шт |
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| 1N5656A | MICROCHIP (MICROSEMI) |
1N5656A Unidirectional THT transil diodes |
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| 1N5657A | MICROCHIP (MICROSEMI) |
1N5657A Unidirectional THT transil diodes |
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| 1N5660A | MICROCHIP (MICROSEMI) |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 130.5V; 8.4A; unidirectional; ±5%; DO13 Case: DO13 Tolerance: ±5% Max. off-state voltage: 111V Semiconductor structure: unidirectional Max. forward impulse current: 8.4A Breakdown voltage: 130.5V Leakage current: 5µA Type of diode: TVS Peak pulse power dissipation: 1.5kW Mounting: THT |
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| 1N5660A | MICROCHIP (MICROSEMI) |
Category: Unidirectional THT transil diodes Description: Diode: TVS; 1.5kW; 130.5V; 8.4A; unidirectional; ±5%; DO13 Case: DO13 Tolerance: ±5% Max. off-state voltage: 111V Semiconductor structure: unidirectional Max. forward impulse current: 8.4A Breakdown voltage: 130.5V Leakage current: 5µA Type of diode: TVS Peak pulse power dissipation: 1.5kW Mounting: THT кількість в упаковці: 100 шт |
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| 1N5802 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V Kind of package: tape Max. off-state voltage: 50V Max. forward voltage: 0.975V Load current: 2.5A Semiconductor structure: single diode Reverse recovery time: 25ns Max. forward impulse current: 35A Type of diode: rectifying Mounting: THT |
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| 1N5802 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 50V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V Kind of package: tape Max. off-state voltage: 50V Max. forward voltage: 0.975V Load current: 2.5A Semiconductor structure: single diode Reverse recovery time: 25ns Max. forward impulse current: 35A Type of diode: rectifying Mounting: THT кількість в упаковці: 1 шт |
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| 1N5804 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V Kind of package: tape Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Max. forward voltage: 0.975V Load current: 2.5A Semiconductor structure: single diode Reverse recovery time: 25ns Max. forward impulse current: 35A |
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| 1N5804 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V Kind of package: tape Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Max. forward voltage: 0.975V Load current: 2.5A Semiconductor structure: single diode Reverse recovery time: 25ns Max. forward impulse current: 35A кількість в упаковці: 1 шт |
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1N5806 | MICROCHIP (MICROSEMI) |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 150V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 2.5A Reverse recovery time: 25ns Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 35A Max. forward voltage: 0.975V |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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1N5806 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 150V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V Type of diode: rectifying Mounting: THT Max. off-state voltage: 150V Load current: 2.5A Reverse recovery time: 25ns Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 35A Max. forward voltage: 0.975V кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 7-14 дні (днів) |
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| 1N5809 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 125A; Ufmax: 0.8V; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 6A Reverse recovery time: 30ns Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 125A Max. forward voltage: 0.8V |
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| 1N5809 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 125A; Ufmax: 0.8V; 30ns Type of diode: rectifying Mounting: THT Max. off-state voltage: 100V Load current: 6A Reverse recovery time: 30ns Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 125A Max. forward voltage: 0.8V кількість в упаковці: 1 шт |
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1N5819UR-1 | MICROCHIP (MICROSEMI) |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; DO213AB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Case: DO213AB Kind of package: reel; tape Max. forward impulse current: 25A Max. forward voltage: 0.6V |
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1N5819UR-1 | MICROCHIP (MICROSEMI) |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 1A; DO213AB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 1A Semiconductor structure: single diode Case: DO213AB Kind of package: reel; tape Max. forward impulse current: 25A Max. forward voltage: 0.6V кількість в упаковці: 1 шт |
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| 1N6036A | MICROCHIP (MICROSEMI) |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 7.5V; 128A; bidirectional; ±5%; DO13; 1.5kW Case: DO13 Mounting: THT Semiconductor structure: bidirectional Max. off-state voltage: 6V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 128A Breakdown voltage: 7.5V Leakage current: 1mA Tolerance: ±5% Type of diode: TVS |
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| 1N6036A | MICROCHIP (MICROSEMI) |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 7.5V; 128A; bidirectional; ±5%; DO13; 1.5kW Case: DO13 Mounting: THT Semiconductor structure: bidirectional Max. off-state voltage: 6V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 128A Breakdown voltage: 7.5V Leakage current: 1mA Tolerance: ±5% Type of diode: TVS кількість в упаковці: 100 шт |
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| 1N6042A | MICROCHIP (MICROSEMI) |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 13V; 82A; bidirectional; ±5%; DO13; 1.5kW Case: DO13 Mounting: THT Semiconductor structure: bidirectional Max. off-state voltage: 11V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 82A Breakdown voltage: 13V Leakage current: 5µA Tolerance: ±5% Type of diode: TVS |
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| 1N6042A | MICROCHIP (MICROSEMI) |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 13V; 82A; bidirectional; ±5%; DO13; 1.5kW Case: DO13 Mounting: THT Semiconductor structure: bidirectional Max. off-state voltage: 11V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 82A Breakdown voltage: 13V Leakage current: 5µA Tolerance: ±5% Type of diode: TVS кількість в упаковці: 100 шт |
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| 1N6045 | MICROCHIP (MICROSEMI) |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 18V; 56.5A; bidirectional; DO13; 1.5kW Case: DO13 Mounting: THT Semiconductor structure: bidirectional Max. off-state voltage: 14V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 56.5A Breakdown voltage: 18V Leakage current: 5µA Type of diode: TVS |
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| 1N6045 | MICROCHIP (MICROSEMI) |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 18V; 56.5A; bidirectional; DO13; 1.5kW Case: DO13 Mounting: THT Semiconductor structure: bidirectional Max. off-state voltage: 14V Peak pulse power dissipation: 1.5kW Max. forward impulse current: 56.5A Breakdown voltage: 18V Leakage current: 5µA Type of diode: TVS кількість в упаковці: 100 шт |
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| 1N6075 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 150V; 3A; tape; Ifsm: 35A; Ufmax: 2.04V; 30ns Mounting: THT Kind of package: tape Semiconductor structure: single diode Max. off-state voltage: 150V Reverse recovery time: 30ns Max. forward impulse current: 35A Max. forward voltage: 2.04V Type of diode: rectifying Load current: 3A |
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| 1N6075 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 150V; 3A; tape; Ifsm: 35A; Ufmax: 2.04V; 30ns Mounting: THT Kind of package: tape Semiconductor structure: single diode Max. off-state voltage: 150V Reverse recovery time: 30ns Max. forward impulse current: 35A Max. forward voltage: 2.04V Type of diode: rectifying Load current: 3A кількість в упаковці: 100 шт |
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| 1N6113A | MICROCHIP (MICROSEMI) |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 19V; 18A; bidirectional; ±5%; 500W Type of diode: TVS Peak pulse power dissipation: 500W Max. off-state voltage: 15.2V Breakdown voltage: 19V Max. forward impulse current: 18A Semiconductor structure: bidirectional Tolerance: ±5% Mounting: THT Leakage current: 1µA |
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| 1N6113A | MICROCHIP (MICROSEMI) |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 19V; 18A; bidirectional; ±5%; 500W Type of diode: TVS Peak pulse power dissipation: 500W Max. off-state voltage: 15.2V Breakdown voltage: 19V Max. forward impulse current: 18A Semiconductor structure: bidirectional Tolerance: ±5% Mounting: THT Leakage current: 1µA кількість в упаковці: 100 шт |
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| 1N6391 | MICROCHIP (MICROSEMI) |
1N6391 Stud mounting Schottky diodes |
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| 1N649-1 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 400mA; tape; Ifsm: 3A; DO35; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 0.4A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 3A Case: DO35 Max. forward voltage: 1V Power dissipation: 0.6W |
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| 1N649-1 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 400mA; tape; Ifsm: 3A; DO35; Ufmax: 1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 0.6kV Load current: 0.4A Semiconductor structure: single diode Kind of package: tape Max. forward impulse current: 3A Case: DO35 Max. forward voltage: 1V Power dissipation: 0.6W кількість в упаковці: 1 шт |
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| 1N6622 | MICROCHIP (MICROSEMI) |
1N6622 THT universal diodes |
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| 1N6623 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 20A; Ufmax: 1.8V; 60ns Kind of package: tape Max. forward impulse current: 20A Max. forward voltage: 1.8V Max. off-state voltage: 800V Load current: 1A Max. load current: 1.5A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 60ns Mounting: THT |
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| 1N6623 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 20A; Ufmax: 1.8V; 60ns Kind of package: tape Max. forward impulse current: 20A Max. forward voltage: 1.8V Max. off-state voltage: 800V Load current: 1A Max. load current: 1.5A Semiconductor structure: single diode Type of diode: rectifying Reverse recovery time: 60ns Mounting: THT кількість в упаковці: 100 шт |
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| 1N6628 | MICROCHIP (MICROSEMI) |
1N6628 THT universal diodes |
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| 1N6638 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: switching; THT; 125V; 300mA; reel,tape; Ifsm: 2.5A; 20ns Kind of package: reel; tape Mounting: THT Max. forward impulse current: 2.5A Max. forward voltage: 1.1V Max. off-state voltage: 125V Load current: 0.3A Semiconductor structure: single diode Type of diode: switching Reverse recovery time: 20ns |
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| 1N6638 | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: switching; THT; 125V; 300mA; reel,tape; Ifsm: 2.5A; 20ns Kind of package: reel; tape Mounting: THT Max. forward impulse current: 2.5A Max. forward voltage: 1.1V Max. off-state voltage: 125V Load current: 0.3A Semiconductor structure: single diode Type of diode: switching Reverse recovery time: 20ns кількість в упаковці: 1 шт |
товар відсутній |
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| 1N756A-1 | MICROCHIP (MICROSEMI) |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 8.2V; 50mA; tape; DO35; single diode; Ir: 1uA Semiconductor structure: single diode Zener voltage: 8.2V Zener current: 50mA Leakage current: 1µA Power dissipation: 0.5W Kind of package: tape Type of diode: Zener Mounting: THT Case: DO35 Tolerance: ±5% |
товар відсутній |
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| 1N756A-1 | MICROCHIP (MICROSEMI) |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 8.2V; 50mA; tape; DO35; single diode; Ir: 1uA Semiconductor structure: single diode Zener voltage: 8.2V Zener current: 50mA Leakage current: 1µA Power dissipation: 0.5W Kind of package: tape Type of diode: Zener Mounting: THT Case: DO35 Tolerance: ±5% кількість в упаковці: 439 шт |
товар відсутній |
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| 1N759A-1 | MICROCHIP (MICROSEMI) |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; 35mA; tape; DO35; single diode; Ir: 1uA Mounting: THT Zener current: 35mA Leakage current: 1µA Case: DO35 Zener voltage: 12V Power dissipation: 0.5W Kind of package: tape Type of diode: Zener Semiconductor structure: single diode Tolerance: ±5% |
товар відсутній |
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| 1N759A-1 | MICROCHIP (MICROSEMI) |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 12V; 35mA; tape; DO35; single diode; Ir: 1uA Mounting: THT Zener current: 35mA Leakage current: 1µA Case: DO35 Zener voltage: 12V Power dissipation: 0.5W Kind of package: tape Type of diode: Zener Semiconductor structure: single diode Tolerance: ±5% кількість в упаковці: 439 шт |
товар відсутній |
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| 1N821A | MICROCHIP (MICROSEMI) |
Category: THT Zener diodes Description: Diode: Zener; 0.5W; 6.2V; 7.5mA; tape; DO35; single diode; Ir: 2uA Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.2V Zener current: 7.5mA Kind of package: tape Case: DO35 Mounting: THT Tolerance: ±5% Semiconductor structure: single diode Leakage current: 2µA |
товар відсутній |
| 1N5614 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Load current: 1A
Reverse recovery time: 2µs
Max. forward voltage: 1.3V
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Load current: 1A
Reverse recovery time: 2µs
Max. forward voltage: 1.3V
товар відсутній
| 1N5614 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Load current: 1A
Reverse recovery time: 2µs
Max. forward voltage: 1.3V
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us
Type of diode: rectifying
Max. off-state voltage: 200V
Max. forward impulse current: 30A
Semiconductor structure: single diode
Mounting: THT
Kind of package: tape
Load current: 1A
Reverse recovery time: 2µs
Max. forward voltage: 1.3V
кількість в упаковці: 1 шт
товар відсутній
| 1N5615 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 25A
Max. forward voltage: 1.6V
Reverse recovery time: 150ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 25A
Max. forward voltage: 1.6V
Reverse recovery time: 150ns
товар відсутній
| 1N5615 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 25A
Max. forward voltage: 1.6V
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 200V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 200V
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 25A
Max. forward voltage: 1.6V
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
товар відсутній
| 1N5617 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 25A
Max. forward voltage: 1.6V
Reverse recovery time: 150ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 25A
Max. forward voltage: 1.6V
Reverse recovery time: 150ns
товар відсутній
| 1N5617 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 25A
Max. forward voltage: 1.6V
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 400V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 150ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.4kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 25A
Max. forward voltage: 1.6V
Reverse recovery time: 150ns
кількість в упаковці: 1 шт
товар відсутній
| 1N5619 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 250ns
Mounting: THT
Max. forward impulse current: 25A
Kind of package: tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 250ns
Mounting: THT
Max. forward impulse current: 25A
Kind of package: tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
товар відсутній
| 1N5619 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 250ns
Mounting: THT
Max. forward impulse current: 25A
Kind of package: tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 1A; tape; Ifsm: 25A; Ufmax: 1.6V; 250ns
Mounting: THT
Max. forward impulse current: 25A
Kind of package: tape
Type of diode: rectifying
Max. off-state voltage: 0.6kV
Max. forward voltage: 1.6V
Load current: 1A
Semiconductor structure: single diode
Reverse recovery time: 250ns
кількість в упаковці: 1 шт
товар відсутній
| 1N5620 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Reverse recovery time: 2µs
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Reverse recovery time: 2µs
товар відсутній
| 1N5620 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Reverse recovery time: 2µs
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 30A; Ufmax: 1.3V; 2us
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.8kV
Load current: 1A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 30A
Max. forward voltage: 1.3V
Reverse recovery time: 2µs
кількість в упаковці: 1 шт
товар відсутній
| 1N5629A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; ±5%; DO13
Max. off-state voltage: 5.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 143A
Breakdown voltage: 6.8V
Leakage current: 1mA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO13
Tolerance: ±5%
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; ±5%; DO13
Max. off-state voltage: 5.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 143A
Breakdown voltage: 6.8V
Leakage current: 1mA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO13
Tolerance: ±5%
товар відсутній
| 1N5629A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; ±5%; DO13
Max. off-state voltage: 5.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 143A
Breakdown voltage: 6.8V
Leakage current: 1mA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO13
Tolerance: ±5%
кількість в упаковці: 100 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 6.8V; 143A; unidirectional; ±5%; DO13
Max. off-state voltage: 5.8V
Semiconductor structure: unidirectional
Max. forward impulse current: 143A
Breakdown voltage: 6.8V
Leakage current: 1mA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Case: DO13
Tolerance: ±5%
кількість в упаковці: 100 шт
товар відсутній
| 1N5635A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 90A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 90A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
товар відсутній
| 1N5635A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 90A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
кількість в упаковці: 100 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 12V; 90A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 10.2V
Breakdown voltage: 12V
Max. forward impulse current: 90A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
кількість в упаковці: 100 шт
товар відсутній
| 1N5647A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 39V; 28A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 39V; 28A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
товар відсутній
| 1N5647A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 39V; 28A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
кількість в упаковці: 100 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 39V; 28A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 33.3V
Breakdown voltage: 39V
Max. forward impulse current: 28A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
кількість в упаковці: 100 шт
товар відсутній
| 1N5648A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 43V; 25.3A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36.8V
Breakdown voltage: 43V
Max. forward impulse current: 25.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 43V; 25.3A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36.8V
Breakdown voltage: 43V
Max. forward impulse current: 25.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
товар відсутній
| 1N5648A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 43V; 25.3A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36.8V
Breakdown voltage: 43V
Max. forward impulse current: 25.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
кількість в упаковці: 100 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 43V; 25.3A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 36.8V
Breakdown voltage: 43V
Max. forward impulse current: 25.3A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
кількість в упаковці: 100 шт
товар відсутній
| 1N5652A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 62V; 17.7A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 62V; 17.7A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
товар відсутній
| 1N5652A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 62V; 17.7A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
кількість в упаковці: 100 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 62V; 17.7A; unidirectional; ±5%; DO13
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 53V
Breakdown voltage: 62V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Tolerance: ±5%
Case: DO13
Mounting: THT
Leakage current: 5µA
кількість в упаковці: 100 шт
товар відсутній
| 1N5655A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 82V; 13.3A; unidirectional; ±5%; DO13
Case: DO13
Mounting: THT
Semiconductor structure: unidirectional
Max. off-state voltage: 70.1V
Peak pulse power dissipation: 1.5kW
Tolerance: ±5%
Max. forward impulse current: 13.3A
Breakdown voltage: 82V
Leakage current: 5µA
Type of diode: TVS
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 82V; 13.3A; unidirectional; ±5%; DO13
Case: DO13
Mounting: THT
Semiconductor structure: unidirectional
Max. off-state voltage: 70.1V
Peak pulse power dissipation: 1.5kW
Tolerance: ±5%
Max. forward impulse current: 13.3A
Breakdown voltage: 82V
Leakage current: 5µA
Type of diode: TVS
товар відсутній
| 1N5655A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 82V; 13.3A; unidirectional; ±5%; DO13
Case: DO13
Mounting: THT
Semiconductor structure: unidirectional
Max. off-state voltage: 70.1V
Peak pulse power dissipation: 1.5kW
Tolerance: ±5%
Max. forward impulse current: 13.3A
Breakdown voltage: 82V
Leakage current: 5µA
Type of diode: TVS
кількість в упаковці: 100 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 82V; 13.3A; unidirectional; ±5%; DO13
Case: DO13
Mounting: THT
Semiconductor structure: unidirectional
Max. off-state voltage: 70.1V
Peak pulse power dissipation: 1.5kW
Tolerance: ±5%
Max. forward impulse current: 13.3A
Breakdown voltage: 82V
Leakage current: 5µA
Type of diode: TVS
кількість в упаковці: 100 шт
товар відсутній
| 1N5660A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 130.5V; 8.4A; unidirectional; ±5%; DO13
Case: DO13
Tolerance: ±5%
Max. off-state voltage: 111V
Semiconductor structure: unidirectional
Max. forward impulse current: 8.4A
Breakdown voltage: 130.5V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 130.5V; 8.4A; unidirectional; ±5%; DO13
Case: DO13
Tolerance: ±5%
Max. off-state voltage: 111V
Semiconductor structure: unidirectional
Max. forward impulse current: 8.4A
Breakdown voltage: 130.5V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
товар відсутній
| 1N5660A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 130.5V; 8.4A; unidirectional; ±5%; DO13
Case: DO13
Tolerance: ±5%
Max. off-state voltage: 111V
Semiconductor structure: unidirectional
Max. forward impulse current: 8.4A
Breakdown voltage: 130.5V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
кількість в упаковці: 100 шт
Category: Unidirectional THT transil diodes
Description: Diode: TVS; 1.5kW; 130.5V; 8.4A; unidirectional; ±5%; DO13
Case: DO13
Tolerance: ±5%
Max. off-state voltage: 111V
Semiconductor structure: unidirectional
Max. forward impulse current: 8.4A
Breakdown voltage: 130.5V
Leakage current: 5µA
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Mounting: THT
кількість в упаковці: 100 шт
товар відсутній
| 1N5802 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Kind of package: tape
Max. off-state voltage: 50V
Max. forward voltage: 0.975V
Load current: 2.5A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 35A
Type of diode: rectifying
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Kind of package: tape
Max. off-state voltage: 50V
Max. forward voltage: 0.975V
Load current: 2.5A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 35A
Type of diode: rectifying
Mounting: THT
товар відсутній
| 1N5802 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Kind of package: tape
Max. off-state voltage: 50V
Max. forward voltage: 0.975V
Load current: 2.5A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 35A
Type of diode: rectifying
Mounting: THT
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 50V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Kind of package: tape
Max. off-state voltage: 50V
Max. forward voltage: 0.975V
Load current: 2.5A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 35A
Type of diode: rectifying
Mounting: THT
кількість в упаковці: 1 шт
товар відсутній
| 1N5804 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Kind of package: tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Max. forward voltage: 0.975V
Load current: 2.5A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 35A
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Kind of package: tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Max. forward voltage: 0.975V
Load current: 2.5A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 35A
товар відсутній
| 1N5804 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Kind of package: tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Max. forward voltage: 0.975V
Load current: 2.5A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 35A
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Kind of package: tape
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Max. forward voltage: 0.975V
Load current: 2.5A
Semiconductor structure: single diode
Reverse recovery time: 25ns
Max. forward impulse current: 35A
кількість в упаковці: 1 шт
товар відсутній
| 1N5806 | |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 2.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 35A
Max. forward voltage: 0.975V
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 2.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 35A
Max. forward voltage: 0.975V
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 390.96 грн |
| 1N5806 | |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 2.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 35A
Max. forward voltage: 0.975V
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 2.5A; tape; Ifsm: 35A; Ufmax: 0.975V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 150V
Load current: 2.5A
Reverse recovery time: 25ns
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 35A
Max. forward voltage: 0.975V
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 469.16 грн |
| 3+ | 417.46 грн |
| 7+ | 387.34 грн |
| 10+ | 370.08 грн |
| 1N5809 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 125A; Ufmax: 0.8V; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 6A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Max. forward voltage: 0.8V
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 125A; Ufmax: 0.8V; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 6A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Max. forward voltage: 0.8V
товар відсутній
| 1N5809 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 125A; Ufmax: 0.8V; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 6A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Max. forward voltage: 0.8V
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 100V; 6A; tape; Ifsm: 125A; Ufmax: 0.8V; 30ns
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 6A
Reverse recovery time: 30ns
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 125A
Max. forward voltage: 0.8V
кількість в упаковці: 1 шт
товар відсутній
| 1N5819UR-1 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; DO213AB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO213AB
Kind of package: reel; tape
Max. forward impulse current: 25A
Max. forward voltage: 0.6V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; DO213AB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO213AB
Kind of package: reel; tape
Max. forward impulse current: 25A
Max. forward voltage: 0.6V
товар відсутній
| 1N5819UR-1 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; DO213AB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO213AB
Kind of package: reel; tape
Max. forward impulse current: 25A
Max. forward voltage: 0.6V
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 1A; DO213AB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Case: DO213AB
Kind of package: reel; tape
Max. forward impulse current: 25A
Max. forward voltage: 0.6V
кількість в упаковці: 1 шт
товар відсутній
| 1N6036A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 7.5V; 128A; bidirectional; ±5%; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 6V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 128A
Breakdown voltage: 7.5V
Leakage current: 1mA
Tolerance: ±5%
Type of diode: TVS
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 7.5V; 128A; bidirectional; ±5%; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 6V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 128A
Breakdown voltage: 7.5V
Leakage current: 1mA
Tolerance: ±5%
Type of diode: TVS
товар відсутній
| 1N6036A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 7.5V; 128A; bidirectional; ±5%; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 6V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 128A
Breakdown voltage: 7.5V
Leakage current: 1mA
Tolerance: ±5%
Type of diode: TVS
кількість в упаковці: 100 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 7.5V; 128A; bidirectional; ±5%; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 6V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 128A
Breakdown voltage: 7.5V
Leakage current: 1mA
Tolerance: ±5%
Type of diode: TVS
кількість в упаковці: 100 шт
товар відсутній
| 1N6042A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 13V; 82A; bidirectional; ±5%; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 82A
Breakdown voltage: 13V
Leakage current: 5µA
Tolerance: ±5%
Type of diode: TVS
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 13V; 82A; bidirectional; ±5%; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 82A
Breakdown voltage: 13V
Leakage current: 5µA
Tolerance: ±5%
Type of diode: TVS
товар відсутній
| 1N6042A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 13V; 82A; bidirectional; ±5%; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 82A
Breakdown voltage: 13V
Leakage current: 5µA
Tolerance: ±5%
Type of diode: TVS
кількість в упаковці: 100 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 13V; 82A; bidirectional; ±5%; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 11V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 82A
Breakdown voltage: 13V
Leakage current: 5µA
Tolerance: ±5%
Type of diode: TVS
кількість в упаковці: 100 шт
товар відсутній
| 1N6045 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 18V; 56.5A; bidirectional; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 14V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 56.5A
Breakdown voltage: 18V
Leakage current: 5µA
Type of diode: TVS
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 18V; 56.5A; bidirectional; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 14V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 56.5A
Breakdown voltage: 18V
Leakage current: 5µA
Type of diode: TVS
товар відсутній
| 1N6045 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 18V; 56.5A; bidirectional; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 14V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 56.5A
Breakdown voltage: 18V
Leakage current: 5µA
Type of diode: TVS
кількість в упаковці: 100 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 18V; 56.5A; bidirectional; DO13; 1.5kW
Case: DO13
Mounting: THT
Semiconductor structure: bidirectional
Max. off-state voltage: 14V
Peak pulse power dissipation: 1.5kW
Max. forward impulse current: 56.5A
Breakdown voltage: 18V
Leakage current: 5µA
Type of diode: TVS
кількість в упаковці: 100 шт
товар відсутній
| 1N6075 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 3A; tape; Ifsm: 35A; Ufmax: 2.04V; 30ns
Mounting: THT
Kind of package: tape
Semiconductor structure: single diode
Max. off-state voltage: 150V
Reverse recovery time: 30ns
Max. forward impulse current: 35A
Max. forward voltage: 2.04V
Type of diode: rectifying
Load current: 3A
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 3A; tape; Ifsm: 35A; Ufmax: 2.04V; 30ns
Mounting: THT
Kind of package: tape
Semiconductor structure: single diode
Max. off-state voltage: 150V
Reverse recovery time: 30ns
Max. forward impulse current: 35A
Max. forward voltage: 2.04V
Type of diode: rectifying
Load current: 3A
товар відсутній
| 1N6075 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 3A; tape; Ifsm: 35A; Ufmax: 2.04V; 30ns
Mounting: THT
Kind of package: tape
Semiconductor structure: single diode
Max. off-state voltage: 150V
Reverse recovery time: 30ns
Max. forward impulse current: 35A
Max. forward voltage: 2.04V
Type of diode: rectifying
Load current: 3A
кількість в упаковці: 100 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 150V; 3A; tape; Ifsm: 35A; Ufmax: 2.04V; 30ns
Mounting: THT
Kind of package: tape
Semiconductor structure: single diode
Max. off-state voltage: 150V
Reverse recovery time: 30ns
Max. forward impulse current: 35A
Max. forward voltage: 2.04V
Type of diode: rectifying
Load current: 3A
кількість в упаковці: 100 шт
товар відсутній
| 1N6113A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 19V; 18A; bidirectional; ±5%; 500W
Type of diode: TVS
Peak pulse power dissipation: 500W
Max. off-state voltage: 15.2V
Breakdown voltage: 19V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Mounting: THT
Leakage current: 1µA
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 19V; 18A; bidirectional; ±5%; 500W
Type of diode: TVS
Peak pulse power dissipation: 500W
Max. off-state voltage: 15.2V
Breakdown voltage: 19V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Mounting: THT
Leakage current: 1µA
товар відсутній
| 1N6113A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 19V; 18A; bidirectional; ±5%; 500W
Type of diode: TVS
Peak pulse power dissipation: 500W
Max. off-state voltage: 15.2V
Breakdown voltage: 19V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Mounting: THT
Leakage current: 1µA
кількість в упаковці: 100 шт
Category: Bidirectional THT transil diodes
Description: Diode: TVS; 19V; 18A; bidirectional; ±5%; 500W
Type of diode: TVS
Peak pulse power dissipation: 500W
Max. off-state voltage: 15.2V
Breakdown voltage: 19V
Max. forward impulse current: 18A
Semiconductor structure: bidirectional
Tolerance: ±5%
Mounting: THT
Leakage current: 1µA
кількість в упаковці: 100 шт
товар відсутній
| 1N649-1 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 400mA; tape; Ifsm: 3A; DO35; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 0.4A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 3A
Case: DO35
Max. forward voltage: 1V
Power dissipation: 0.6W
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 400mA; tape; Ifsm: 3A; DO35; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 0.4A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 3A
Case: DO35
Max. forward voltage: 1V
Power dissipation: 0.6W
товар відсутній
| 1N649-1 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 400mA; tape; Ifsm: 3A; DO35; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 0.4A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 3A
Case: DO35
Max. forward voltage: 1V
Power dissipation: 0.6W
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 400mA; tape; Ifsm: 3A; DO35; Ufmax: 1V
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 0.4A
Semiconductor structure: single diode
Kind of package: tape
Max. forward impulse current: 3A
Case: DO35
Max. forward voltage: 1V
Power dissipation: 0.6W
кількість в упаковці: 1 шт
товар відсутній
| 1N6623 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 20A; Ufmax: 1.8V; 60ns
Kind of package: tape
Max. forward impulse current: 20A
Max. forward voltage: 1.8V
Max. off-state voltage: 800V
Load current: 1A
Max. load current: 1.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 60ns
Mounting: THT
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 20A; Ufmax: 1.8V; 60ns
Kind of package: tape
Max. forward impulse current: 20A
Max. forward voltage: 1.8V
Max. off-state voltage: 800V
Load current: 1A
Max. load current: 1.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 60ns
Mounting: THT
товар відсутній
| 1N6623 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 20A; Ufmax: 1.8V; 60ns
Kind of package: tape
Max. forward impulse current: 20A
Max. forward voltage: 1.8V
Max. off-state voltage: 800V
Load current: 1A
Max. load current: 1.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 60ns
Mounting: THT
кількість в упаковці: 100 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 800V; 1A; tape; Ifsm: 20A; Ufmax: 1.8V; 60ns
Kind of package: tape
Max. forward impulse current: 20A
Max. forward voltage: 1.8V
Max. off-state voltage: 800V
Load current: 1A
Max. load current: 1.5A
Semiconductor structure: single diode
Type of diode: rectifying
Reverse recovery time: 60ns
Mounting: THT
кількість в упаковці: 100 шт
товар відсутній
| 1N6638 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 300mA; reel,tape; Ifsm: 2.5A; 20ns
Kind of package: reel; tape
Mounting: THT
Max. forward impulse current: 2.5A
Max. forward voltage: 1.1V
Max. off-state voltage: 125V
Load current: 0.3A
Semiconductor structure: single diode
Type of diode: switching
Reverse recovery time: 20ns
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 300mA; reel,tape; Ifsm: 2.5A; 20ns
Kind of package: reel; tape
Mounting: THT
Max. forward impulse current: 2.5A
Max. forward voltage: 1.1V
Max. off-state voltage: 125V
Load current: 0.3A
Semiconductor structure: single diode
Type of diode: switching
Reverse recovery time: 20ns
товар відсутній
| 1N6638 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 300mA; reel,tape; Ifsm: 2.5A; 20ns
Kind of package: reel; tape
Mounting: THT
Max. forward impulse current: 2.5A
Max. forward voltage: 1.1V
Max. off-state voltage: 125V
Load current: 0.3A
Semiconductor structure: single diode
Type of diode: switching
Reverse recovery time: 20ns
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: switching; THT; 125V; 300mA; reel,tape; Ifsm: 2.5A; 20ns
Kind of package: reel; tape
Mounting: THT
Max. forward impulse current: 2.5A
Max. forward voltage: 1.1V
Max. off-state voltage: 125V
Load current: 0.3A
Semiconductor structure: single diode
Type of diode: switching
Reverse recovery time: 20ns
кількість в упаковці: 1 шт
товар відсутній
| 1N756A-1 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 50mA; tape; DO35; single diode; Ir: 1uA
Semiconductor structure: single diode
Zener voltage: 8.2V
Zener current: 50mA
Leakage current: 1µA
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Mounting: THT
Case: DO35
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 50mA; tape; DO35; single diode; Ir: 1uA
Semiconductor structure: single diode
Zener voltage: 8.2V
Zener current: 50mA
Leakage current: 1µA
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Mounting: THT
Case: DO35
Tolerance: ±5%
товар відсутній
| 1N756A-1 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 50mA; tape; DO35; single diode; Ir: 1uA
Semiconductor structure: single diode
Zener voltage: 8.2V
Zener current: 50mA
Leakage current: 1µA
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Mounting: THT
Case: DO35
Tolerance: ±5%
кількість в упаковці: 439 шт
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 8.2V; 50mA; tape; DO35; single diode; Ir: 1uA
Semiconductor structure: single diode
Zener voltage: 8.2V
Zener current: 50mA
Leakage current: 1µA
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Mounting: THT
Case: DO35
Tolerance: ±5%
кількість в упаковці: 439 шт
товар відсутній
| 1N759A-1 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 35mA; tape; DO35; single diode; Ir: 1uA
Mounting: THT
Zener current: 35mA
Leakage current: 1µA
Case: DO35
Zener voltage: 12V
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Semiconductor structure: single diode
Tolerance: ±5%
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 35mA; tape; DO35; single diode; Ir: 1uA
Mounting: THT
Zener current: 35mA
Leakage current: 1µA
Case: DO35
Zener voltage: 12V
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Semiconductor structure: single diode
Tolerance: ±5%
товар відсутній
| 1N759A-1 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 35mA; tape; DO35; single diode; Ir: 1uA
Mounting: THT
Zener current: 35mA
Leakage current: 1µA
Case: DO35
Zener voltage: 12V
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Semiconductor structure: single diode
Tolerance: ±5%
кількість в упаковці: 439 шт
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 12V; 35mA; tape; DO35; single diode; Ir: 1uA
Mounting: THT
Zener current: 35mA
Leakage current: 1µA
Case: DO35
Zener voltage: 12V
Power dissipation: 0.5W
Kind of package: tape
Type of diode: Zener
Semiconductor structure: single diode
Tolerance: ±5%
кількість в упаковці: 439 шт
товар відсутній
| 1N821A |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 7.5mA; tape; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 7.5mA
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
Category: THT Zener diodes
Description: Diode: Zener; 0.5W; 6.2V; 7.5mA; tape; DO35; single diode; Ir: 2uA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.2V
Zener current: 7.5mA
Kind of package: tape
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Leakage current: 2µA
товар відсутній