Продукція > MICROCHIP (MICROSEMI) > Всі товари виробника MICROCHIP (MICROSEMI) (4040) > Сторінка 33 з 68
| Фото | Назва | Виробник | Інформація |
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APT30DQ60BG | MICROCHIP (MICROSEMI) |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 600V; 30A; TO247-2; automotive industry Mounting: THT Application: automotive industry Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Case: TO247-2 Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode |
на замовлення 117 шт: термін постачання 21-30 дні (днів) |
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APT30DQ60BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; TO247-2; automotive industry Mounting: THT Application: automotive industry Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Case: TO247-2 Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode кількість в упаковці: 1 шт |
на замовлення 117 шт: термін постачання 7-14 дні (днів) |
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APT30DQ60BHBG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; TO247-3; automotive industry Mounting: THT Application: automotive industry Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Case: TO247-3 Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: double series |
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APT30DQ60BHBG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; TO247-3; automotive industry Mounting: THT Application: automotive industry Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Case: TO247-3 Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: double series кількість в упаковці: 1 шт |
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APT30DQ60KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; TO220-2; 1.14÷1.4mm; FRED Mounting: THT Application: automotive industry Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode |
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APT30DQ60KG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; TO220-2; 1.14÷1.4mm; FRED Mounting: THT Application: automotive industry Type of diode: rectifying Features of semiconductor devices: fast switching Technology: FRED Heatsink thickness: 1.14...1.4mm Case: TO220-2 Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode кількість в упаковці: 1 шт |
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APT30DS60BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; TO247-2; FRED Mounting: THT Type of diode: rectifying Technology: FRED Case: TO247-2 Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode |
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APT30DS60BG | MICROCHIP (MICROSEMI) |
Category: THT universal diodes Description: Diode: rectifying; THT; 600V; 30A; TO247-2; FRED Mounting: THT Type of diode: rectifying Technology: FRED Case: TO247-2 Max. off-state voltage: 0.6kV Load current: 30A Semiconductor structure: single diode кількість в упаковці: 1 шт |
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APT30F50B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; TO247-3 Mounting: THT Case: TO247-3 On-state resistance: 0.19Ω Pulsed drain current: 90A Drain-source voltage: 500V Drain current: 19A Type of transistor: N-MOSFET Power dissipation: 415W Polarisation: unipolar Gate charge: 115nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V |
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APT30F50B | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; TO247-3 Mounting: THT Case: TO247-3 On-state resistance: 0.19Ω Pulsed drain current: 90A Drain-source voltage: 500V Drain current: 19A Type of transistor: N-MOSFET Power dissipation: 415W Polarisation: unipolar Gate charge: 115nC Technology: POWER MOS 8® Kind of channel: enhanced Gate-source voltage: ±30V кількість в упаковці: 1 шт |
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APT30F50S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 19A Pulsed drain current: 90A Power dissipation: 415W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 115nC Kind of channel: enhanced |
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APT30F50S | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; D3PAK Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 500V Drain current: 19A Pulsed drain current: 90A Power dissipation: 415W Case: D3PAK Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 115nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT30F60J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 160A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 19A On-state resistance: 0.15Ω Power dissipation: 355W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced |
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| APT30F60J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 160A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 19A On-state resistance: 0.15Ω Power dissipation: 355W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced кількість в упаковці: 1 шт |
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APT30GN60BDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 37A Power dissipation: 203W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 90A Mounting: THT Gate charge: 165nC Kind of package: tube Turn-on time: 16ns Turn-off time: 255ns Features of semiconductor devices: integrated anti-parallel diode |
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APT30GN60BDQ2G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 37A Power dissipation: 203W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 90A Mounting: THT Gate charge: 165nC Kind of package: tube Turn-on time: 16ns Turn-off time: 255ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
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APT30GN60BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 37A Power dissipation: 203W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 90A Mounting: THT Gate charge: 165nC Kind of package: tube Turn-on time: 26ns Turn-off time: 255ns |
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APT30GN60BG | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3 Type of transistor: IGBT Technology: Field Stop Collector-emitter voltage: 600V Collector current: 37A Power dissipation: 203W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 90A Mounting: THT Gate charge: 165nC Kind of package: tube Turn-on time: 26ns Turn-off time: 255ns кількість в упаковці: 1 шт |
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APT30GP60BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 49A; 463W; TO247-3 Type of transistor: IGBT Technology: POWER MOS 7®; PT Collector-emitter voltage: 600V Collector current: 49A Power dissipation: 463W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 90nC Kind of package: tube Turn-on time: 31ns Turn-off time: 165ns Features of semiconductor devices: integrated anti-parallel diode |
на замовлення 44 шт: термін постачання 21-30 дні (днів) |
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APT30GP60BDQ1G | MICROCHIP (MICROSEMI) |
Category: THT IGBT transistors Description: Transistor: IGBT; PT; 600V; 49A; 463W; TO247-3 Type of transistor: IGBT Technology: POWER MOS 7®; PT Collector-emitter voltage: 600V Collector current: 49A Power dissipation: 463W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 120A Mounting: THT Gate charge: 90nC Kind of package: tube Turn-on time: 31ns Turn-off time: 165ns Features of semiconductor devices: integrated anti-parallel diode кількість в упаковці: 1 шт |
на замовлення 44 шт: термін постачання 7-14 дні (днів) |
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| APT30GP60BG | MICROCHIP (MICROSEMI) |
APT30GP60BG THT IGBT transistors |
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APT30M19JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 520A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 130A On-state resistance: 19mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS V® Kind of channel: enhanced |
на замовлення 1 шт: термін постачання 21-30 дні (днів) |
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APT30M19JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 520A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 130A On-state resistance: 19mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS V® Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 1 шт: термін постачання 7-14 дні (днів) |
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| APT30M19JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 520A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 130A On-state resistance: 19mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced |
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| APT30M19JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 520A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 130A On-state resistance: 19mΩ Power dissipation: 700W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT30M30JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 88A; ISOTOP; screw; Idm: 352A; 520W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 352A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 88A On-state resistance: 30mΩ Power dissipation: 520W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced |
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| APT30M30JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 88A; ISOTOP; screw; Idm: 352A; 520W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 352A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 88A On-state resistance: 30mΩ Power dissipation: 520W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT30M36B2FLLG | MICROCHIP (MICROSEMI) |
APT30M36B2FLLG THT N channel transistors |
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| APT30M36B2LLG | MICROCHIP (MICROSEMI) | APT30M36B2LLG THT N channel transistors |
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| APT30M36JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 304A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 76A On-state resistance: 36mΩ Power dissipation: 463W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced |
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| APT30M36JFLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 304A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 76A On-state resistance: 36mΩ Power dissipation: 463W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT30M36JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 304A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 76A On-state resistance: 36mΩ Power dissipation: 463W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced |
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| APT30M36JLL | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 304A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 76A On-state resistance: 36mΩ Power dissipation: 463W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 7® Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT30M36LFLLG | MICROCHIP (MICROSEMI) | APT30M36LFLLG THT N channel transistors |
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| APT30M36LLLG | MICROCHIP (MICROSEMI) |
APT30M36LLLG THT N channel transistors |
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| APT30M40JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 280A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 70A On-state resistance: 40mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced |
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| APT30M40JVFR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 280A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 70A On-state resistance: 40mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT30M40JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 280A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 70A On-state resistance: 40mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced |
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| APT30M40JVR | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 280A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 300V Drain current: 70A On-state resistance: 40mΩ Power dissipation: 450W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 5® Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT30M60J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 160A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 19A On-state resistance: 0.15Ω Power dissipation: 355W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced |
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| APT30M60J | MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W Mechanical mounting: screw Gate-source voltage: ±30V Pulsed drain current: 160A Case: ISOTOP Semiconductor structure: single transistor Drain-source voltage: 600V Drain current: 19A On-state resistance: 0.15Ω Power dissipation: 355W Polarisation: unipolar Electrical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Kind of channel: enhanced кількість в упаковці: 1 шт |
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| APT30M61BFLLG | MICROCHIP (MICROSEMI) | APT30M61BFLLG THT N channel transistors |
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| APT30M61BLLG | MICROCHIP (MICROSEMI) | APT30M61BLLG THT N channel transistors |
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APT30M61SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 54A; 403W; D3PAK Mounting: SMD Drain current: 54A Kind of channel: enhanced Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: D3PAK On-state resistance: 61mΩ Power dissipation: 403W Gate charge: 64nC Polarisation: unipolar Technology: POWER MOS 7® |
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APT30M61SFLLG | MICROCHIP (MICROSEMI) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 54A; 403W; D3PAK Mounting: SMD Drain current: 54A Kind of channel: enhanced Drain-source voltage: 300V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube Case: D3PAK On-state resistance: 61mΩ Power dissipation: 403W Gate charge: 64nC Polarisation: unipolar Technology: POWER MOS 7® кількість в упаковці: 1 шт |
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| APT30M61SLLG | MICROCHIP (MICROSEMI) | APT30M61SLLG SMD N channel transistors |
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| APT30M70BVFRG | MICROCHIP (MICROSEMI) |
APT30M70BVFRG THT N channel transistors |
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| APT30M70BVRG | MICROCHIP (MICROSEMI) |
APT30M70BVRG THT N channel transistors |
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| APT30M75BFLLG | MICROCHIP (MICROSEMI) | APT30M75BFLLG THT N channel transistors |
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| APT30M75BLLG | MICROCHIP (MICROSEMI) | APT30M75BLLG THT N channel transistors |
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APT30M85BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A Technology: POWER MOS 5® Mounting: THT Power dissipation: 300W Case: TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 195nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 160A Drain-source voltage: 300V Drain current: 40A On-state resistance: 85mΩ |
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APT30M85BVRG | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A Technology: POWER MOS 5® Mounting: THT Power dissipation: 300W Case: TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 195nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 160A Drain-source voltage: 300V Drain current: 40A On-state resistance: 85mΩ кількість в упаковці: 1 шт |
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APT30N60BC6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 89A Power dissipation: 219W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Gate charge: 88nC Kind of channel: enhanced |
на замовлення 16 шт: термін постачання 21-30 дні (днів) |
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APT30N60BC6 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Pulsed drain current: 89A Power dissipation: 219W Case: TO247-3 Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Gate charge: 88nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 16 шт: термін постачання 7-14 дні (днів) |
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| APT30S20BCTG | MICROCHIP (MICROSEMI) |
APT30S20BCTG THT Schottky diodes |
на замовлення 38 шт: термін постачання 7-14 дні (днів) |
|
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| APT30S20BG | MICROCHIP (MICROSEMI) |
APT30S20BG THT Schottky diodes |
товар відсутній |
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| APT31M100B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 20A Pulsed drain current: 120A Power dissipation: 1.04kW Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 260nC Kind of channel: enhanced |
товар відсутній |
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| APT31M100B2 | MICROCHIP (MICROSEMI) |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW Type of transistor: N-MOSFET Technology: POWER MOS 8® Polarisation: unipolar Drain-source voltage: 1kV Drain current: 20A Pulsed drain current: 120A Power dissipation: 1.04kW Case: TO247MAX Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 260nC Kind of channel: enhanced кількість в упаковці: 1 шт |
товар відсутній |
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| APT31M100L | MICROCHIP (MICROSEMI) |
APT31M100L THT N channel transistors |
товар відсутній |
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| APT32F120J | MICROCHIP (MICROSEMI) |
APT32F120J Transistor modules MOSFET |
товар відсутній |
| APT30DQ60BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-2; automotive industry
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: TO247-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-2; automotive industry
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: TO247-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
на замовлення 117 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 205.93 грн |
| 5+ | 170.38 грн |
| 7+ | 131.56 грн |
| 18+ | 124.37 грн |
| APT30DQ60BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-2; automotive industry
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: TO247-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-2; automotive industry
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: TO247-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
кількість в упаковці: 1 шт
на замовлення 117 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 247.12 грн |
| 5+ | 212.31 грн |
| 7+ | 157.87 грн |
| 18+ | 149.24 грн |
| APT30DQ60BHBG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-3; automotive industry
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: TO247-3
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: double series
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-3; automotive industry
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: TO247-3
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: double series
товар відсутній
| APT30DQ60BHBG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-3; automotive industry
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: TO247-3
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: double series
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-3; automotive industry
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Case: TO247-3
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: double series
кількість в упаковці: 1 шт
товар відсутній
| APT30DQ60KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO220-2; 1.14÷1.4mm; FRED
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO220-2; 1.14÷1.4mm; FRED
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
товар відсутній
| APT30DQ60KG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO220-2; 1.14÷1.4mm; FRED
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO220-2; 1.14÷1.4mm; FRED
Mounting: THT
Application: automotive industry
Type of diode: rectifying
Features of semiconductor devices: fast switching
Technology: FRED
Heatsink thickness: 1.14...1.4mm
Case: TO220-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
кількість в упаковці: 1 шт
товар відсутній
| APT30DS60BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-2; FRED
Mounting: THT
Type of diode: rectifying
Technology: FRED
Case: TO247-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-2; FRED
Mounting: THT
Type of diode: rectifying
Technology: FRED
Case: TO247-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
товар відсутній
| APT30DS60BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-2; FRED
Mounting: THT
Type of diode: rectifying
Technology: FRED
Case: TO247-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
кількість в упаковці: 1 шт
Category: THT universal diodes
Description: Diode: rectifying; THT; 600V; 30A; TO247-2; FRED
Mounting: THT
Type of diode: rectifying
Technology: FRED
Case: TO247-2
Max. off-state voltage: 0.6kV
Load current: 30A
Semiconductor structure: single diode
кількість в упаковці: 1 шт
товар відсутній
| APT30F50B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; TO247-3
Mounting: THT
Case: TO247-3
On-state resistance: 0.19Ω
Pulsed drain current: 90A
Drain-source voltage: 500V
Drain current: 19A
Type of transistor: N-MOSFET
Power dissipation: 415W
Polarisation: unipolar
Gate charge: 115nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; TO247-3
Mounting: THT
Case: TO247-3
On-state resistance: 0.19Ω
Pulsed drain current: 90A
Drain-source voltage: 500V
Drain current: 19A
Type of transistor: N-MOSFET
Power dissipation: 415W
Polarisation: unipolar
Gate charge: 115nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
товар відсутній
| APT30F50B |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; TO247-3
Mounting: THT
Case: TO247-3
On-state resistance: 0.19Ω
Pulsed drain current: 90A
Drain-source voltage: 500V
Drain current: 19A
Type of transistor: N-MOSFET
Power dissipation: 415W
Polarisation: unipolar
Gate charge: 115nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; TO247-3
Mounting: THT
Case: TO247-3
On-state resistance: 0.19Ω
Pulsed drain current: 90A
Drain-source voltage: 500V
Drain current: 19A
Type of transistor: N-MOSFET
Power dissipation: 415W
Polarisation: unipolar
Gate charge: 115nC
Technology: POWER MOS 8®
Kind of channel: enhanced
Gate-source voltage: ±30V
кількість в упаковці: 1 шт
товар відсутній
| APT30F50S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 19A
Pulsed drain current: 90A
Power dissipation: 415W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 115nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 19A
Pulsed drain current: 90A
Power dissipation: 415W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 115nC
Kind of channel: enhanced
товар відсутній
| APT30F50S |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 19A
Pulsed drain current: 90A
Power dissipation: 415W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 115nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 19A; Idm: 90A; 415W; D3PAK
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 19A
Pulsed drain current: 90A
Power dissipation: 415W
Case: D3PAK
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 115nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT30F60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 160A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 160A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
товар відсутній
| APT30F60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 160A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 160A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT30GN60BDQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 203W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Turn-on time: 16ns
Turn-off time: 255ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 203W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Turn-on time: 16ns
Turn-off time: 255ns
Features of semiconductor devices: integrated anti-parallel diode
товар відсутній
| APT30GN60BDQ2G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 203W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Turn-on time: 16ns
Turn-off time: 255ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 203W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Turn-on time: 16ns
Turn-off time: 255ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
товар відсутній
| APT30GN60BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 203W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 255ns
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 203W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 255ns
товар відсутній
| APT30GN60BG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 203W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 255ns
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; Field Stop; 600V; 37A; 203W; TO247-3
Type of transistor: IGBT
Technology: Field Stop
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 203W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 90A
Mounting: THT
Gate charge: 165nC
Kind of package: tube
Turn-on time: 26ns
Turn-off time: 255ns
кількість в упаковці: 1 шт
товар відсутній
| APT30GP60BDQ1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 49A; 463W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Collector current: 49A
Power dissipation: 463W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 165ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 49A; 463W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Collector current: 49A
Power dissipation: 463W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 165ns
Features of semiconductor devices: integrated anti-parallel diode
на замовлення 44 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 851.6 грн |
| 2+ | 654.91 грн |
| 4+ | 618.96 грн |
| APT30GP60BDQ1G |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 49A; 463W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Collector current: 49A
Power dissipation: 463W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 165ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; PT; 600V; 49A; 463W; TO247-3
Type of transistor: IGBT
Technology: POWER MOS 7®; PT
Collector-emitter voltage: 600V
Collector current: 49A
Power dissipation: 463W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 120A
Mounting: THT
Gate charge: 90nC
Kind of package: tube
Turn-on time: 31ns
Turn-off time: 165ns
Features of semiconductor devices: integrated anti-parallel diode
кількість в упаковці: 1 шт
на замовлення 44 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 1021.92 грн |
| 2+ | 816.11 грн |
| 4+ | 742.75 грн |
| APT30M19JVFR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 520A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 130A
On-state resistance: 19mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS V®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 520A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 130A
On-state resistance: 19mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS V®
Kind of channel: enhanced
на замовлення 1 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 5404.58 грн |
| APT30M19JVFR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 520A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 130A
On-state resistance: 19mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS V®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 520A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 130A
On-state resistance: 19mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS V®
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 1 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 6485.5 грн |
| APT30M19JVR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 520A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 130A
On-state resistance: 19mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 520A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 130A
On-state resistance: 19mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
товар відсутній
| APT30M19JVR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 520A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 130A
On-state resistance: 19mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 130A; ISOTOP; screw; Idm: 520A
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 520A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 130A
On-state resistance: 19mΩ
Power dissipation: 700W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT30M30JLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 88A; ISOTOP; screw; Idm: 352A; 520W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 352A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 88A
On-state resistance: 30mΩ
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 88A; ISOTOP; screw; Idm: 352A; 520W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 352A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 88A
On-state resistance: 30mΩ
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
товар відсутній
| APT30M30JLL |
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 88A; ISOTOP; screw; Idm: 352A; 520W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 352A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 88A
On-state resistance: 30mΩ
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 88A; ISOTOP; screw; Idm: 352A; 520W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 352A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 88A
On-state resistance: 30mΩ
Power dissipation: 520W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT30M36B2FLLG |
|
Виробник: MICROCHIP (MICROSEMI)
APT30M36B2FLLG THT N channel transistors
APT30M36B2FLLG THT N channel transistors
товар відсутній
| APT30M36B2LLG |
Виробник: MICROCHIP (MICROSEMI)
APT30M36B2LLG THT N channel transistors
APT30M36B2LLG THT N channel transistors
товар відсутній
| APT30M36JFLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 304A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 76A
On-state resistance: 36mΩ
Power dissipation: 463W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 304A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 76A
On-state resistance: 36mΩ
Power dissipation: 463W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
товар відсутній
| APT30M36JFLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 304A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 76A
On-state resistance: 36mΩ
Power dissipation: 463W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 304A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 76A
On-state resistance: 36mΩ
Power dissipation: 463W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT30M36JLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 304A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 76A
On-state resistance: 36mΩ
Power dissipation: 463W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 304A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 76A
On-state resistance: 36mΩ
Power dissipation: 463W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
товар відсутній
| APT30M36JLL |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 304A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 76A
On-state resistance: 36mΩ
Power dissipation: 463W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 76A; ISOTOP; screw; Idm: 304A; 463W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 304A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 76A
On-state resistance: 36mΩ
Power dissipation: 463W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 7®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT30M36LFLLG |
Виробник: MICROCHIP (MICROSEMI)
APT30M36LFLLG THT N channel transistors
APT30M36LFLLG THT N channel transistors
товар відсутній
| APT30M40JVFR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
товар відсутній
| APT30M40JVFR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT30M40JVR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
товар відсутній
| APT30M40JVR |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 300V; 70A; ISOTOP; screw; Idm: 280A; 450W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 280A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 300V
Drain current: 70A
On-state resistance: 40mΩ
Power dissipation: 450W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 5®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT30M60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 160A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 160A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
товар відсутній
| APT30M60J |
|
Виробник: MICROCHIP (MICROSEMI)
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 160A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 19A; ISOTOP; screw; Idm: 160A; 355W
Mechanical mounting: screw
Gate-source voltage: ±30V
Pulsed drain current: 160A
Case: ISOTOP
Semiconductor structure: single transistor
Drain-source voltage: 600V
Drain current: 19A
On-state resistance: 0.15Ω
Power dissipation: 355W
Polarisation: unipolar
Electrical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
| APT30M61BFLLG |
Виробник: MICROCHIP (MICROSEMI)
APT30M61BFLLG THT N channel transistors
APT30M61BFLLG THT N channel transistors
товар відсутній
| APT30M61SFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 54A; 403W; D3PAK
Mounting: SMD
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: D3PAK
On-state resistance: 61mΩ
Power dissipation: 403W
Gate charge: 64nC
Polarisation: unipolar
Technology: POWER MOS 7®
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 54A; 403W; D3PAK
Mounting: SMD
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: D3PAK
On-state resistance: 61mΩ
Power dissipation: 403W
Gate charge: 64nC
Polarisation: unipolar
Technology: POWER MOS 7®
товар відсутній
| APT30M61SFLLG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 54A; 403W; D3PAK
Mounting: SMD
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: D3PAK
On-state resistance: 61mΩ
Power dissipation: 403W
Gate charge: 64nC
Polarisation: unipolar
Technology: POWER MOS 7®
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 54A; 403W; D3PAK
Mounting: SMD
Drain current: 54A
Kind of channel: enhanced
Drain-source voltage: 300V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
Case: D3PAK
On-state resistance: 61mΩ
Power dissipation: 403W
Gate charge: 64nC
Polarisation: unipolar
Technology: POWER MOS 7®
кількість в упаковці: 1 шт
товар відсутній
| APT30M70BVFRG |
|
Виробник: MICROCHIP (MICROSEMI)
APT30M70BVFRG THT N channel transistors
APT30M70BVFRG THT N channel transistors
товар відсутній
| APT30M75BFLLG |
Виробник: MICROCHIP (MICROSEMI)
APT30M75BFLLG THT N channel transistors
APT30M75BFLLG THT N channel transistors
товар відсутній
| APT30M85BVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A
Technology: POWER MOS 5®
Mounting: THT
Power dissipation: 300W
Case: TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 195nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 160A
Drain-source voltage: 300V
Drain current: 40A
On-state resistance: 85mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A
Technology: POWER MOS 5®
Mounting: THT
Power dissipation: 300W
Case: TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 195nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 160A
Drain-source voltage: 300V
Drain current: 40A
On-state resistance: 85mΩ
товар відсутній
| APT30M85BVRG |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A
Technology: POWER MOS 5®
Mounting: THT
Power dissipation: 300W
Case: TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 195nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 160A
Drain-source voltage: 300V
Drain current: 40A
On-state resistance: 85mΩ
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; POWER MOS 5®; unipolar; 300V; 40A; Idm: 160A
Technology: POWER MOS 5®
Mounting: THT
Power dissipation: 300W
Case: TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 195nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 160A
Drain-source voltage: 300V
Drain current: 40A
On-state resistance: 85mΩ
кількість в упаковці: 1 шт
товар відсутній
| APT30N60BC6 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 89A
Power dissipation: 219W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 88nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 89A
Power dissipation: 219W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 88nC
Kind of channel: enhanced
на замовлення 16 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 544.25 грн |
| 3+ | 490.28 грн |
| 10+ | 487.4 грн |
| APT30N60BC6 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 89A
Power dissipation: 219W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 88nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; Idm: 89A; 219W; TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Pulsed drain current: 89A
Power dissipation: 219W
Case: TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Gate charge: 88nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 16 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 653.1 грн |
| 3+ | 610.96 грн |
| 10+ | 584.89 грн |
| APT30S20BCTG |
|
Виробник: MICROCHIP (MICROSEMI)
APT30S20BCTG THT Schottky diodes
APT30S20BCTG THT Schottky diodes
на замовлення 38 шт:
термін постачання 7-14 дні (днів)| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 904.87 грн |
| 2+ | 551.24 грн |
| 6+ | 521.05 грн |
| APT31M100B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 1.04kW
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 1.04kW
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
товар відсутній
| APT31M100B2 |
|
Виробник: MICROCHIP (MICROSEMI)
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 1.04kW
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 20A; Idm: 120A; 1.04kW
Type of transistor: N-MOSFET
Technology: POWER MOS 8®
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 20A
Pulsed drain current: 120A
Power dissipation: 1.04kW
Case: TO247MAX
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 260nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній