Продукція > ALPHA & OMEGA SEMICONDUCTOR > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR (4271) > Сторінка 47 з 72
Фото | Назва | Виробник | Інформація |
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AOSP36326C | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AOSP36326C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8 Case: SO8 Mounting: SMD Power dissipation: 2.5W Gate charge: 15nC Polarisation: unipolar Drain current: 12A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET On-state resistance: 11mΩ Gate-source voltage: ±20V |
на замовлення 1505 шт: термін постачання 21-30 дні (днів) |
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AOSP36326C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8 Case: SO8 Mounting: SMD Power dissipation: 2.5W Gate charge: 15nC Polarisation: unipolar Drain current: 12A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET On-state resistance: 11mΩ Gate-source voltage: ±20V кількість в упаковці: 1 шт |
на замовлення 1505 шт: термін постачання 7-14 дні (днів) |
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AOSP66406 | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AOSP66406 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 13A; 2W; SO8 Drain-source voltage: 40V Drain current: 13A On-state resistance: 6.6mΩ Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 8.5nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 |
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AOSP66406 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 13A; 2W; SO8 Drain-source voltage: 40V Drain current: 13A On-state resistance: 6.6mΩ Type of transistor: N-MOSFET Power dissipation: 2W Polarisation: unipolar Gate charge: 8.5nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 кількість в упаковці: 1 шт |
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AOSP66920 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 13.5A; 3.1W; SO8 Drain-source voltage: 100V Drain current: 13.5A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Gate charge: 50nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 |
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AOSP66920 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 13.5A 8-Pin SOIC T/R |
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AOSP66920 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 13.5A; 3.1W; SO8 Drain-source voltage: 100V Drain current: 13.5A On-state resistance: 8.5mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Gate charge: 50nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: SO8 кількість в упаковці: 1 шт |
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AOSP66923 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 12A; 3.1W; SO8 Mounting: SMD Drain-source voltage: 100V Drain current: 12A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Gate charge: 35nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 |
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AOSP66923 | Alpha & Omega Semiconductor | 100V N-Channel MOSFET |
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AOSP66923 | Alpha & Omega Semiconductor | 100V N-Channel MOSFET |
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AOSP66923 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 12A; 3.1W; SO8 Mounting: SMD Drain-source voltage: 100V Drain current: 12A On-state resistance: 11mΩ Type of transistor: N-MOSFET Power dissipation: 3.1W Polarisation: unipolar Gate charge: 35nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 кількість в упаковці: 1 шт |
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AOSP66925 | Alpha & Omega Semiconductor | Medium Voltage MOSFETs (40V - 400V) |
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AOSS21115C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 20V; 4.5A; 1.3W; SOT23 Mounting: SMD Gate charge: 17nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Polarisation: unipolar Power dissipation: 1.3W Type of transistor: P-MOSFET On-state resistance: 40mΩ Drain current: 4.5A Drain-source voltage: 20V |
на замовлення 300 шт: термін постачання 21-30 дні (днів) |
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AOSS21115C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 20V; 4.5A; 1.3W; SOT23 Mounting: SMD Gate charge: 17nC Case: SOT23 Kind of channel: enhanced Gate-source voltage: ±8V Polarisation: unipolar Power dissipation: 1.3W Type of transistor: P-MOSFET On-state resistance: 40mΩ Drain current: 4.5A Drain-source voltage: 20V кількість в упаковці: 5 шт |
на замовлення 300 шт: термін постачання 7-14 дні (днів) |
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AOSS21115C | Alpha & Omega Semiconductor | Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R |
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AOSS21115C | Alpha & Omega Semiconductor | Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R |
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AOSS21115C | Alpha & Omega Semiconductor | Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R |
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AOSS21311C | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R |
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AOSS21311C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.3W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.3A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 23nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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AOSS21311C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.3W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.3A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 45mΩ Mounting: SMD Gate charge: 23nC Kind of channel: enhanced Features of semiconductor devices: ESD protected gate кількість в упаковці: 6000 шт |
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AOSS21311C | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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AOSS21311C | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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AOSS21319C | Alpha & Omega Semiconductor | P-Channel MOSFET |
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AOSS21319C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 30V; 2.8A; 1.3W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 0.1Ω Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V |
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AOSS21319C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; 30V; 2.8A; 1.3W; SOT23 Mounting: SMD Case: SOT23 Drain-source voltage: 30V Drain current: 2.8A On-state resistance: 0.1Ω Type of transistor: P-MOSFET Power dissipation: 1.3W Polarisation: unipolar Gate charge: 12nC Kind of channel: enhanced Gate-source voltage: ±20V кількість в упаковці: 5 шт |
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AOSS21319C | Alpha & Omega Semiconductor | P-Channel MOSFET |
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AOSS32136C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 38A; 800mW; SOT23 Power dissipation: 0.8W Case: SOT23 Polarisation: unipolar Gate charge: 14nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 38A Drain-source voltage: 20V Drain current: 5A On-state resistance: 28mΩ Type of transistor: N-MOSFET |
на замовлення 1022 шт: термін постачання 21-30 дні (днів) |
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AOSS32136C | Alpha & Omega Semiconductor | 20V N-Channel MOSFET |
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AOSS32136C | Alpha & Omega Semiconductor | 20V N-Channel MOSFET |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AOSS32136C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 38A; 800mW; SOT23 Power dissipation: 0.8W Case: SOT23 Polarisation: unipolar Gate charge: 14nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 38A Drain-source voltage: 20V Drain current: 5A On-state resistance: 28mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт |
на замовлення 1022 шт: термін постачання 7-14 дні (днів) |
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AOSS32334C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; 1.3W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Power dissipation: 1.3W Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 20mΩ Type of transistor: N-MOSFET |
на замовлення 1700 шт: термін постачання 21-30 дні (днів) |
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AOSS32334C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; 1.3W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Power dissipation: 1.3W Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 6.2A On-state resistance: 20mΩ Type of transistor: N-MOSFET кількість в упаковці: 5 шт |
на замовлення 1700 шт: термін постачання 7-14 дні (днів) |
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AOSS32334C | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R |
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AOSS32334C | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R |
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AOSS32338C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.3W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Power dissipation: 1.3W Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: 30V Drain current: 4A On-state resistance: 50mΩ Type of transistor: N-MOSFET |
на замовлення 1520 шт: термін постачання 21-30 дні (днів) |
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AOSS32338C | Alpha & Omega Semiconductor | 30V N-Channel MOSFET |
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AOSS32338C | Alpha & Omega Semiconductor | 30V N-Channel MOSFET |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AOSS32338C | Alpha & Omega Semiconductor | 30V N-Channel MOSFET |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AOSS32338C | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.3W; SOT23 Mounting: SMD Case: SOT23 Polarisation: unipolar Power dissipation: 1.3W Gate charge: 16nC Kind of channel: enhanced Gate-source voltage: ±12V Drain-source voltage: 30V Drain current: 4A On-state resistance: 50mΩ Type of transistor: N-MOSFET кількість в упаковці: 5 шт |
на замовлення 1520 шт: термін постачання 7-14 дні (днів) |
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AOSS62934 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 2A 3-Pin SOT-23 T/R |
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AOSS62934 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 2A 3-Pin SOT-23 T/R |
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AOSS62934 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 2A; 1.4W; SOT23 Type of transistor: N-MOSFET Technology: AlphaSGT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 2A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.8nC Kind of channel: enhanced |
на замовлення 3095 шт: термін постачання 21-30 дні (днів) |
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AOSS62934 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 2A; 1.4W; SOT23 Type of transistor: N-MOSFET Technology: AlphaSGT™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 2A Power dissipation: 1.4W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.8nC Kind of channel: enhanced кількість в упаковці: 5 шт |
на замовлення 3095 шт: термін постачання 7-14 дні (днів) |
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AOT095A60L | Alpha & Omega Semiconductor | N Channel Power Transistor |
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AOT10B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-220 Tube |
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AOT10B60D | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 82W; TO220; Eoff: 0.07mJ; Eon: 0.26mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 82W Case: TO220 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 17.4nC Kind of package: tube Turn-on time: 25ns Turn-off time: 80.8ns Collector-emitter saturation voltage: 1.53V Turn-off switching energy: 0.07mJ Turn-on switching energy: 0.26mJ |
на замовлення 439 шт: термін постачання 21-30 дні (днів) |
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AOT10B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 20A 163W 3-Pin(3+Tab) TO-220 Tube |
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AOT10B60D | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 10A; 82W; TO220; Eoff: 0.07mJ; Eon: 0.26mJ Type of transistor: IGBT Collector-emitter voltage: 600V Collector current: 10A Power dissipation: 82W Case: TO220 Gate-emitter voltage: ±20V Pulsed collector current: 40A Mounting: THT Gate charge: 17.4nC Kind of package: tube Turn-on time: 25ns Turn-off time: 80.8ns Collector-emitter saturation voltage: 1.53V Turn-off switching energy: 0.07mJ Turn-on switching energy: 0.26mJ кількість в упаковці: 1 шт |
на замовлення 439 шт: термін постачання 7-14 дні (днів) |
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AOT10B65M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 20A 150000mW 3-Pin(3+Tab) TO-220 Tube |
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AOT10B65M1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 10A Power dissipation: 75W Case: TO220 Gate-emitter voltage: ±30V Pulsed collector current: 30A Mounting: THT Gate charge: 24nC Kind of package: tube Turn-on time: 27ns Turn-off time: 137ns Collector-emitter saturation voltage: 1.6V Turn-off switching energy: 0.13mJ Turn-on switching energy: 0.18mJ |
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AOT10B65M1 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 10A Power dissipation: 75W Case: TO220 Gate-emitter voltage: ±30V Pulsed collector current: 30A Mounting: THT Gate charge: 24nC Kind of package: tube Turn-on time: 27ns Turn-off time: 137ns Collector-emitter saturation voltage: 1.6V Turn-off switching energy: 0.13mJ Turn-on switching energy: 0.18mJ кількість в упаковці: 1000 шт |
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AOT10B65M2 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 20A 150000mW 3-Pin(3+Tab) TO-220 Tube |
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AOT10B65M2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 10A Power dissipation: 75W Case: TO220 Gate-emitter voltage: ±30V Pulsed collector current: 30A Mounting: THT Gate charge: 24nC Kind of package: tube Turn-on time: 27ns Turn-off time: 137ns Collector-emitter saturation voltage: 1.6V Turn-off switching energy: 0.13mJ Turn-on switching energy: 0.18mJ |
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AOT10B65M2 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 10A Power dissipation: 75W Case: TO220 Gate-emitter voltage: ±30V Pulsed collector current: 30A Mounting: THT Gate charge: 24nC Kind of package: tube Turn-on time: 27ns Turn-off time: 137ns Collector-emitter saturation voltage: 1.6V Turn-off switching energy: 0.13mJ Turn-on switching energy: 0.18mJ кількість в упаковці: 1 шт |
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AOT10B65MQ2 | Alpha & Omega Semiconductor | Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode |
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AOT10B65MQ2 | Alpha & Omega Semiconductor | Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode |
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AOT10N60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220 |
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AOT10N60 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 250W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7.2A Power dissipation: 250W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Gate charge: 31nC Kind of channel: enhanced |
на замовлення 218 шт: термін постачання 21-30 дні (днів) |
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AOSP36326C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8
Case: SO8
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 12A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 11mΩ
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8
Case: SO8
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 12A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 11mΩ
Gate-source voltage: ±20V
на замовлення 1505 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
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21+ | 18.38 грн |
29+ | 12.37 грн |
89+ | 9 грн |
244+ | 8.51 грн |
AOSP36326C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8
Case: SO8
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 12A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 11mΩ
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; 2.5W; SO8
Case: SO8
Mounting: SMD
Power dissipation: 2.5W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 12A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
On-state resistance: 11mΩ
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 1505 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
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13+ | 22.06 грн |
25+ | 15.42 грн |
89+ | 10.8 грн |
244+ | 10.21 грн |
AOSP66406 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13A; 2W; SO8
Drain-source voltage: 40V
Drain current: 13A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 8.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13A; 2W; SO8
Drain-source voltage: 40V
Drain current: 13A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 8.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
товар відсутній
AOSP66406 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13A; 2W; SO8
Drain-source voltage: 40V
Drain current: 13A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 8.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 13A; 2W; SO8
Drain-source voltage: 40V
Drain current: 13A
On-state resistance: 6.6mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Gate charge: 8.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
товар відсутній
AOSP66920 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 13.5A; 3.1W; SO8
Drain-source voltage: 100V
Drain current: 13.5A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 50nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 13.5A; 3.1W; SO8
Drain-source voltage: 100V
Drain current: 13.5A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 50nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
товар відсутній
AOSP66920 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 100V 13.5A 8-Pin SOIC T/R
Trans MOSFET N-CH 100V 13.5A 8-Pin SOIC T/R
товар відсутній
AOSP66920 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 13.5A; 3.1W; SO8
Drain-source voltage: 100V
Drain current: 13.5A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 50nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 13.5A; 3.1W; SO8
Drain-source voltage: 100V
Drain current: 13.5A
On-state resistance: 8.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 50nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: SO8
кількість в упаковці: 1 шт
товар відсутній
AOSP66923 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 12A; 3.1W; SO8
Mounting: SMD
Drain-source voltage: 100V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 35nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 12A; 3.1W; SO8
Mounting: SMD
Drain-source voltage: 100V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 35nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
товар відсутній
AOSP66923 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 12A; 3.1W; SO8
Mounting: SMD
Drain-source voltage: 100V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 35nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 12A; 3.1W; SO8
Mounting: SMD
Drain-source voltage: 100V
Drain current: 12A
On-state resistance: 11mΩ
Type of transistor: N-MOSFET
Power dissipation: 3.1W
Polarisation: unipolar
Gate charge: 35nC
Technology: AlphaSGT™
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
кількість в упаковці: 1 шт
товар відсутній
AOSS21115C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 20V; 4.5A; 1.3W; SOT23
Mounting: SMD
Gate charge: 17nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Polarisation: unipolar
Power dissipation: 1.3W
Type of transistor: P-MOSFET
On-state resistance: 40mΩ
Drain current: 4.5A
Drain-source voltage: 20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 20V; 4.5A; 1.3W; SOT23
Mounting: SMD
Gate charge: 17nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Polarisation: unipolar
Power dissipation: 1.3W
Type of transistor: P-MOSFET
On-state resistance: 40mΩ
Drain current: 4.5A
Drain-source voltage: 20V
на замовлення 300 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.11 грн |
80+ | 4.58 грн |
100+ | 4.06 грн |
240+ | 3.48 грн |
AOSS21115C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 20V; 4.5A; 1.3W; SOT23
Mounting: SMD
Gate charge: 17nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Polarisation: unipolar
Power dissipation: 1.3W
Type of transistor: P-MOSFET
On-state resistance: 40mΩ
Drain current: 4.5A
Drain-source voltage: 20V
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 20V; 4.5A; 1.3W; SOT23
Mounting: SMD
Gate charge: 17nC
Case: SOT23
Kind of channel: enhanced
Gate-source voltage: ±8V
Polarisation: unipolar
Power dissipation: 1.3W
Type of transistor: P-MOSFET
On-state resistance: 40mΩ
Drain current: 4.5A
Drain-source voltage: 20V
кількість в упаковці: 5 шт
на замовлення 300 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.13 грн |
50+ | 5.71 грн |
100+ | 4.87 грн |
240+ | 4.18 грн |
650+ | 3.95 грн |
AOSS21115C |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
товар відсутній
AOSS21115C |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
товар відсутній
AOSS21115C |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 20V 4.5A 3-Pin SOT-23 T/R
товар відсутній
AOSS21311C |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R
товар відсутній
AOSS21311C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
товар відсутній
AOSS21311C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 6000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.3A; 1.3W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 23nC
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
кількість в упаковці: 6000 шт
товар відсутній
AOSS21311C |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 26.99 грн |
6000+ | 22.13 грн |
AOSS21311C |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 30V 4.3A 3-Pin SOT-23 T/R
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 29.07 грн |
6000+ | 23.84 грн |
AOSS21319C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 2.8A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 2.8A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
товар відсутній
AOSS21319C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 2.8A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; 30V; 2.8A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Drain-source voltage: 30V
Drain current: 2.8A
On-state resistance: 0.1Ω
Type of transistor: P-MOSFET
Power dissipation: 1.3W
Polarisation: unipolar
Gate charge: 12nC
Kind of channel: enhanced
Gate-source voltage: ±20V
кількість в упаковці: 5 шт
товар відсутній
AOSS32136C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 38A; 800mW; SOT23
Power dissipation: 0.8W
Case: SOT23
Polarisation: unipolar
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 38A
Drain-source voltage: 20V
Drain current: 5A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 38A; 800mW; SOT23
Power dissipation: 0.8W
Case: SOT23
Polarisation: unipolar
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 38A
Drain-source voltage: 20V
Drain current: 5A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
на замовлення 1022 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
36+ | 10.88 грн |
58+ | 6.19 грн |
100+ | 5.62 грн |
185+ | 4.55 грн |
500+ | 4.48 грн |
508+ | 4.27 грн |
AOSS32136C |
Виробник: Alpha & Omega Semiconductor
20V N-Channel MOSFET
20V N-Channel MOSFET
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 3.42 грн |
AOSS32136C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 38A; 800mW; SOT23
Power dissipation: 0.8W
Case: SOT23
Polarisation: unipolar
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 38A
Drain-source voltage: 20V
Drain current: 5A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 5A; Idm: 38A; 800mW; SOT23
Power dissipation: 0.8W
Case: SOT23
Polarisation: unipolar
Gate charge: 14nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 38A
Drain-source voltage: 20V
Drain current: 5A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 1 шт
на замовлення 1022 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
22+ | 13.05 грн |
35+ | 7.71 грн |
100+ | 6.74 грн |
185+ | 5.46 грн |
500+ | 5.38 грн |
508+ | 5.12 грн |
AOSS32334C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Power dissipation: 1.3W
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Power dissipation: 1.3W
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
на замовлення 1700 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.11 грн |
55+ | 6.54 грн |
100+ | 5.9 грн |
185+ | 4.55 грн |
505+ | 4.34 грн |
AOSS32334C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Power dissipation: 1.3W
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 6.2A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Power dissipation: 1.3W
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 6.2A
On-state resistance: 20mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
на замовлення 1700 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.13 грн |
35+ | 8.15 грн |
100+ | 7.08 грн |
185+ | 5.46 грн |
505+ | 5.21 грн |
AOSS32334C |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R
товар відсутній
AOSS32334C |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 30V 6.2A 3-Pin SOT-23 T/R
товар відсутній
AOSS32338C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Power dissipation: 1.3W
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Power dissipation: 1.3W
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
на замовлення 1520 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
35+ | 12.25 грн |
70+ | 5.23 грн |
100+ | 4.72 грн |
215+ | 3.89 грн |
590+ | 3.68 грн |
AOSS32338C |
Виробник: Alpha & Omega Semiconductor
30V N-Channel MOSFET
30V N-Channel MOSFET
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 7.19 грн |
AOSS32338C |
Виробник: Alpha & Omega Semiconductor
30V N-Channel MOSFET
30V N-Channel MOSFET
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 6.67 грн |
AOSS32338C |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Power dissipation: 1.3W
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4A; 1.3W; SOT23
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Power dissipation: 1.3W
Gate charge: 16nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Drain-source voltage: 30V
Drain current: 4A
On-state resistance: 50mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 5 шт
на замовлення 1520 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
20+ | 14.7 грн |
45+ | 6.52 грн |
100+ | 5.67 грн |
215+ | 4.67 грн |
590+ | 4.42 грн |
AOSS62934 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 100V 2A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 100V 2A 3-Pin SOT-23 T/R
товар відсутній
AOSS62934 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 100V 2A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 100V 2A 3-Pin SOT-23 T/R
товар відсутній
AOSS62934 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 2A; 1.4W; SOT23
Type of transistor: N-MOSFET
Technology: AlphaSGT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.8nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 2A; 1.4W; SOT23
Type of transistor: N-MOSFET
Technology: AlphaSGT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.8nC
Kind of channel: enhanced
на замовлення 3095 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.11 грн |
45+ | 8.18 грн |
100+ | 7.25 грн |
135+ | 6.19 грн |
365+ | 5.9 грн |
AOSS62934 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 2A; 1.4W; SOT23
Type of transistor: N-MOSFET
Technology: AlphaSGT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.8nC
Kind of channel: enhanced
кількість в упаковці: 5 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 2A; 1.4W; SOT23
Type of transistor: N-MOSFET
Technology: AlphaSGT™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2A
Power dissipation: 1.4W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.8nC
Kind of channel: enhanced
кількість в упаковці: 5 шт
на замовлення 3095 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.13 грн |
30+ | 10.19 грн |
100+ | 8.7 грн |
135+ | 7.42 грн |
365+ | 7.08 грн |
AOT10B60D |
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-220 Tube
Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(3+Tab) TO-220 Tube
товар відсутній
AOT10B60D |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 82W; TO220; Eoff: 0.07mJ; Eon: 0.26mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 82W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 17.4nC
Kind of package: tube
Turn-on time: 25ns
Turn-off time: 80.8ns
Collector-emitter saturation voltage: 1.53V
Turn-off switching energy: 0.07mJ
Turn-on switching energy: 0.26mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 82W; TO220; Eoff: 0.07mJ; Eon: 0.26mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 82W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 17.4nC
Kind of package: tube
Turn-on time: 25ns
Turn-off time: 80.8ns
Collector-emitter saturation voltage: 1.53V
Turn-off switching energy: 0.07mJ
Turn-on switching energy: 0.26mJ
на замовлення 439 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 104.16 грн |
5+ | 85.34 грн |
12+ | 76.09 грн |
31+ | 71.83 грн |
AOT10B60D |
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 600V 20A 163W 3-Pin(3+Tab) TO-220 Tube
Trans IGBT Chip N-CH 600V 20A 163W 3-Pin(3+Tab) TO-220 Tube
товар відсутній
AOT10B60D |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 82W; TO220; Eoff: 0.07mJ; Eon: 0.26mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 82W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 17.4nC
Kind of package: tube
Turn-on time: 25ns
Turn-off time: 80.8ns
Collector-emitter saturation voltage: 1.53V
Turn-off switching energy: 0.07mJ
Turn-on switching energy: 0.26mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 10A; 82W; TO220; Eoff: 0.07mJ; Eon: 0.26mJ
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 10A
Power dissipation: 82W
Case: TO220
Gate-emitter voltage: ±20V
Pulsed collector current: 40A
Mounting: THT
Gate charge: 17.4nC
Kind of package: tube
Turn-on time: 25ns
Turn-off time: 80.8ns
Collector-emitter saturation voltage: 1.53V
Turn-off switching energy: 0.07mJ
Turn-on switching energy: 0.26mJ
кількість в упаковці: 1 шт
на замовлення 439 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3+ | 124.99 грн |
5+ | 106.35 грн |
12+ | 91.31 грн |
31+ | 86.19 грн |
500+ | 83.63 грн |
AOT10B65M1 |
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 20A 150000mW 3-Pin(3+Tab) TO-220 Tube
Trans IGBT Chip N-CH 650V 20A 150000mW 3-Pin(3+Tab) TO-220 Tube
товар відсутній
AOT10B65M1 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 75W
Case: TO220
Gate-emitter voltage: ±30V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Turn-on time: 27ns
Turn-off time: 137ns
Collector-emitter saturation voltage: 1.6V
Turn-off switching energy: 0.13mJ
Turn-on switching energy: 0.18mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 75W
Case: TO220
Gate-emitter voltage: ±30V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Turn-on time: 27ns
Turn-off time: 137ns
Collector-emitter saturation voltage: 1.6V
Turn-off switching energy: 0.13mJ
Turn-on switching energy: 0.18mJ
товар відсутній
AOT10B65M1 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 75W
Case: TO220
Gate-emitter voltage: ±30V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Turn-on time: 27ns
Turn-off time: 137ns
Collector-emitter saturation voltage: 1.6V
Turn-off switching energy: 0.13mJ
Turn-on switching energy: 0.18mJ
кількість в упаковці: 1000 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 75W
Case: TO220
Gate-emitter voltage: ±30V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Turn-on time: 27ns
Turn-off time: 137ns
Collector-emitter saturation voltage: 1.6V
Turn-off switching energy: 0.13mJ
Turn-on switching energy: 0.18mJ
кількість в упаковці: 1000 шт
товар відсутній
AOT10B65M2 |
Виробник: Alpha & Omega Semiconductor
Trans IGBT Chip N-CH 650V 20A 150000mW 3-Pin(3+Tab) TO-220 Tube
Trans IGBT Chip N-CH 650V 20A 150000mW 3-Pin(3+Tab) TO-220 Tube
товар відсутній
AOT10B65M2 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 75W
Case: TO220
Gate-emitter voltage: ±30V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Turn-on time: 27ns
Turn-off time: 137ns
Collector-emitter saturation voltage: 1.6V
Turn-off switching energy: 0.13mJ
Turn-on switching energy: 0.18mJ
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 75W
Case: TO220
Gate-emitter voltage: ±30V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Turn-on time: 27ns
Turn-off time: 137ns
Collector-emitter saturation voltage: 1.6V
Turn-off switching energy: 0.13mJ
Turn-on switching energy: 0.18mJ
товар відсутній
AOT10B65M2 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 75W
Case: TO220
Gate-emitter voltage: ±30V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Turn-on time: 27ns
Turn-off time: 137ns
Collector-emitter saturation voltage: 1.6V
Turn-off switching energy: 0.13mJ
Turn-on switching energy: 0.18mJ
кількість в упаковці: 1 шт
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 10A; 75W; TO220; Eoff: 0.13mJ; Eon: 0.18mJ
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 10A
Power dissipation: 75W
Case: TO220
Gate-emitter voltage: ±30V
Pulsed collector current: 30A
Mounting: THT
Gate charge: 24nC
Kind of package: tube
Turn-on time: 27ns
Turn-off time: 137ns
Collector-emitter saturation voltage: 1.6V
Turn-off switching energy: 0.13mJ
Turn-on switching energy: 0.18mJ
кількість в упаковці: 1 шт
товар відсутній
AOT10B65MQ2 |
Виробник: Alpha & Omega Semiconductor
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
товар відсутній
AOT10B65MQ2 |
Виробник: Alpha & Omega Semiconductor
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode
товар відсутній
AOT10N60 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220
Trans MOSFET N-CH 600V 10A 3-Pin(3+Tab) TO-220
товар відсутній
AOT10N60 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 31nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 250W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 31nC
Kind of channel: enhanced
на замовлення 218 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5+ | 82.71 грн |
6+ | 68.98 грн |
15+ | 58.31 грн |
39+ | 54.76 грн |