Продукція > ALPHA & OMEGA SEMICONDUCTOR > Всі товари виробника ALPHA & OMEGA SEMICONDUCTOR (4271) > Сторінка 43 з 72
Фото | Назва | Виробник | Інформація |
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AONR21357 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -32.5A Power dissipation: 12W Case: DFN3x3 Gate-source voltage: ±25V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 25nC Kind of channel: enhanced |
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AONR21357 | Alpha & Omega Semiconductor | Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R |
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AONR21357 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -32.5A Power dissipation: 12W Case: DFN3x3 Gate-source voltage: ±25V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 25nC Kind of channel: enhanced кількість в упаковці: 5000 шт |
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AONR21357_201 | Alpha & Omega Semiconductor | P-Channel MOSFET |
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AONR26309A | Alpha & Omega Semiconductor | 30V Complementary MOSFET |
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AONR32314 | Alpha & Omega Semiconductor | 30V N-Channel MOSFET |
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AONR32314 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; 9.6W; DFN8; 3x3mm Case: DFN8 Mounting: SMD Dimensions: 3x3mm Polarisation: unipolar Kind of channel: enhanced Power dissipation: 9.6W Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 30V Drain current: 25.5A On-state resistance: 8.7mΩ Gate charge: 22nC |
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AONR32314 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; 9.6W; DFN8; 3x3mm Case: DFN8 Mounting: SMD Dimensions: 3x3mm Polarisation: unipolar Kind of channel: enhanced Power dissipation: 9.6W Gate-source voltage: ±20V Type of transistor: N-MOSFET Drain-source voltage: 30V Drain current: 25.5A On-state resistance: 8.7mΩ Gate charge: 22nC |
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AONR32318 | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AONR32320C | Alpha & Omega Semiconductor | 30V N-Channel MOSFET |
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AONR32320C | Alpha & Omega Semiconductor | 30V N-Channel MOSFET |
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AONR34332C | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AONR36326C | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AONR36326C | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AONR36366 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 34A 8-Pin DFN EP T/R |
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AONR36366 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 11W; DFN8; 3x3mm Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 34A Power dissipation: 11W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 24nC Kind of channel: enhanced Dimensions: 3x3mm |
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AONR36366 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 34A 8-Pin DFN EP T/R |
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AONR36366 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 11W; DFN8; 3x3mm Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 34A Power dissipation: 11W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 24nC Kind of channel: enhanced Dimensions: 3x3mm кількість в упаковці: 1 шт |
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AONR36368 | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AONR36368 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 9.6W; DFN8; 3x3mm Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Power dissipation: 9.6W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Dimensions: 3x3mm |
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AONR36368 | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AONR36368 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 9.6W; DFN8; 3x3mm Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 32A Power dissipation: 9.6W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhanced Dimensions: 3x3mm кількість в упаковці: 1 шт |
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AONR62692E | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AONR62818 | Alpha & Omega Semiconductor | N-Channel MOSFET |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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AONR62818 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 41A; 21.5W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 41A Power dissipation: 21.5W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 34nC Kind of channel: enhanced |
на замовлення 526 шт: термін постачання 21-30 дні (днів) |
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AONR62818 | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AONR62818 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 41A; 21.5W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 41A Power dissipation: 21.5W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 6.6mΩ Mounting: SMD Gate charge: 34nC Kind of channel: enhanced кількість в упаковці: 1 шт |
на замовлення 526 шт: термін постачання 7-14 дні (днів) |
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AONR62921 | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AONR62921 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 31.5A; 21.5W; DFN3.3x3.3 Drain-source voltage: 100V Drain current: 31.5A On-state resistance: 10.2mΩ Type of transistor: N-MOSFET Power dissipation: 21.5W Polarisation: unipolar Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DFN3.3x3.3 |
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AONR62921 | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AONR62921 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 31.5A; 21.5W; DFN3.3x3.3 Drain-source voltage: 100V Drain current: 31.5A On-state resistance: 10.2mΩ Type of transistor: N-MOSFET Power dissipation: 21.5W Polarisation: unipolar Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DFN3.3x3.3 кількість в упаковці: 1 шт |
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AONR66406 | Alpha & Omega Semiconductor | N-Channel MOSFET |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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AONR66406 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 30A; 10.5W; DFN8; 3x3mm Dimensions: 3x3mm Drain-source voltage: 40V Drain current: 30A On-state resistance: 6.1mΩ Type of transistor: N-MOSFET Power dissipation: 10.5W Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DFN8 |
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AONR66406 | Alpha & Omega Semiconductor | N-Channel MOSFET |
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AONR66406 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 30A; 10.5W; DFN8; 3x3mm Dimensions: 3x3mm Drain-source voltage: 40V Drain current: 30A On-state resistance: 6.1mΩ Type of transistor: N-MOSFET Power dissipation: 10.5W Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: DFN8 кількість в упаковці: 1 шт |
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AONR66820 | Alpha & Omega Semiconductor | Medium Voltage MOSFETs (40V - 400V) |
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AONR66922 | Alpha & Omega Semiconductor | 100V N-Channel MOSFET |
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AONR66922 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 34A; 20.5W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 34A Power dissipation: 20.5W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 32.5nC Kind of channel: enhanced |
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AONR66922 | Alpha & Omega Semiconductor | 100V N-Channel MOSFET |
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AONR66922 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 34A; 20.5W; DFN3.3x3.3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 34A Power dissipation: 20.5W Case: DFN3.3x3.3 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 32.5nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AONR66924 | Alpha & Omega Semiconductor | Medium Voltage MOSFETs (40V - 400V) |
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AONR66924 | Alpha & Omega Semiconductor | Medium Voltage MOSFETs (40V - 400V) |
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AONS1R1A70 | Alpha & Omega Semiconductor | N Channel Power Transistor |
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AONS1R6A70 | Alpha & Omega Semiconductor | N Channel Power Transistor |
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AONS20485 | Alpha & Omega Semiconductor | 40V P-Channel MOSFET |
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AONS21113 | Alpha & Omega Semiconductor | 20V P Channel MOSFET |
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AONS21303C | Alpha & Omega Semiconductor | 30V P Channel MOSFET |
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AONS21307 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -24A; 15W; DFN5x6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -24A Power dissipation: 15W Case: DFN5x6 Gate-source voltage: ±25V On-state resistance: 11mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhanced |
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AONS21307 | Alpha & Omega Semiconductor | P-Channel MOSFET |
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AONS21307 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -24A; 15W; DFN5x6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -24A Power dissipation: 15W Case: DFN5x6 Gate-source voltage: ±25V On-state resistance: 11mΩ Mounting: SMD Gate charge: 17nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AONS21309C | Alpha & Omega Semiconductor | P-Channel MOSFET |
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AONS21321 | Alpha & Omega Semiconductor | 30V P-Channel MOSFET |
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AONS21321 | Alpha & Omega Semiconductor | 30V P-Channel MOSFET |
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AONS21321 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 9.8W; DFN5x6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -20A Power dissipation: 9.8W Case: DFN5x6 Gate-source voltage: ±25V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 11nC Kind of channel: enhanced |
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AONS21321 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 9.8W; DFN5x6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -20A Power dissipation: 9.8W Case: DFN5x6 Gate-source voltage: ±25V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 11nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AONS21357 | Alpha & Omega Semiconductor | 30V P-Channel MOSFET |
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AONS21357 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -36A; 19W; DFN5x6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -36A Power dissipation: 19W Case: DFN5x6 Gate-source voltage: ±25V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 25nC Kind of channel: enhanced |
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AONS21357 | Alpha & Omega Semiconductor | 30V P-Channel MOSFET |
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AONS21357 | ALPHA & OMEGA SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -36A; 19W; DFN5x6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -36A Power dissipation: 19W Case: DFN5x6 Gate-source voltage: ±25V On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 25nC Kind of channel: enhanced кількість в упаковці: 1 шт |
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AONS30300 | Alpha & Omega Semiconductor | 30V N-Channel MOSFET |
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AONR21357 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -32.5A
Power dissipation: 12W
Case: DFN3x3
Gate-source voltage: ±25V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -32.5A
Power dissipation: 12W
Case: DFN3x3
Gate-source voltage: ±25V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhanced
товар відсутній
AONR21357 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R
Trans MOSFET P-CH 30V 21A 8-Pin DFN-A EP T/R
товар відсутній
AONR21357 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -32.5A
Power dissipation: 12W
Case: DFN3x3
Gate-source voltage: ±25V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhanced
кількість в упаковці: 5000 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32.5A; 12W; DFN3x3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -32.5A
Power dissipation: 12W
Case: DFN3x3
Gate-source voltage: ±25V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhanced
кількість в упаковці: 5000 шт
товар відсутній
AONR32314 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; 9.6W; DFN8; 3x3mm
Case: DFN8
Mounting: SMD
Dimensions: 3x3mm
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 9.6W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 25.5A
On-state resistance: 8.7mΩ
Gate charge: 22nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; 9.6W; DFN8; 3x3mm
Case: DFN8
Mounting: SMD
Dimensions: 3x3mm
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 9.6W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 25.5A
On-state resistance: 8.7mΩ
Gate charge: 22nC
товар відсутній
AONR32314 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; 9.6W; DFN8; 3x3mm
Case: DFN8
Mounting: SMD
Dimensions: 3x3mm
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 9.6W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 25.5A
On-state resistance: 8.7mΩ
Gate charge: 22nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 25.5A; 9.6W; DFN8; 3x3mm
Case: DFN8
Mounting: SMD
Dimensions: 3x3mm
Polarisation: unipolar
Kind of channel: enhanced
Power dissipation: 9.6W
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Drain-source voltage: 30V
Drain current: 25.5A
On-state resistance: 8.7mΩ
Gate charge: 22nC
товар відсутній
AONR36366 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 34A 8-Pin DFN EP T/R
Trans MOSFET N-CH 30V 34A 8-Pin DFN EP T/R
товар відсутній
AONR36366 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 11W; DFN8; 3x3mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Dimensions: 3x3mm
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 11W; DFN8; 3x3mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Dimensions: 3x3mm
товар відсутній
AONR36366 |
Виробник: Alpha & Omega Semiconductor
Trans MOSFET N-CH 30V 34A 8-Pin DFN EP T/R
Trans MOSFET N-CH 30V 34A 8-Pin DFN EP T/R
товар відсутній
AONR36366 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 11W; DFN8; 3x3mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Dimensions: 3x3mm
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 34A; 11W; DFN8; 3x3mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 34A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 24nC
Kind of channel: enhanced
Dimensions: 3x3mm
кількість в упаковці: 1 шт
товар відсутній
AONR36368 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 9.6W; DFN8; 3x3mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 9.6W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Dimensions: 3x3mm
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 9.6W; DFN8; 3x3mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 9.6W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Dimensions: 3x3mm
товар відсутній
AONR36368 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 9.6W; DFN8; 3x3mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 9.6W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Dimensions: 3x3mm
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 9.6W; DFN8; 3x3mm
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 9.6W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Dimensions: 3x3mm
кількість в упаковці: 1 шт
товар відсутній
AONR62818 |
Виробник: Alpha & Omega Semiconductor
N-Channel MOSFET
N-Channel MOSFET
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
3000+ | 27.72 грн |
AONR62818 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; 21.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 41A
Power dissipation: 21.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; 21.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 41A
Power dissipation: 21.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
на замовлення 526 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
7+ | 60.5 грн |
8+ | 44.66 грн |
24+ | 35.56 грн |
65+ | 33.42 грн |
500+ | 33.14 грн |
AONR62818 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; 21.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 41A
Power dissipation: 21.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 41A; 21.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 41A
Power dissipation: 21.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 6.6mΩ
Mounting: SMD
Gate charge: 34nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
на замовлення 526 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
4+ | 72.6 грн |
5+ | 55.65 грн |
24+ | 42.67 грн |
65+ | 40.11 грн |
500+ | 39.77 грн |
AONR62921 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31.5A; 21.5W; DFN3.3x3.3
Drain-source voltage: 100V
Drain current: 31.5A
On-state resistance: 10.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 21.5W
Polarisation: unipolar
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN3.3x3.3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31.5A; 21.5W; DFN3.3x3.3
Drain-source voltage: 100V
Drain current: 31.5A
On-state resistance: 10.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 21.5W
Polarisation: unipolar
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN3.3x3.3
товар відсутній
AONR62921 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31.5A; 21.5W; DFN3.3x3.3
Drain-source voltage: 100V
Drain current: 31.5A
On-state resistance: 10.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 21.5W
Polarisation: unipolar
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN3.3x3.3
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31.5A; 21.5W; DFN3.3x3.3
Drain-source voltage: 100V
Drain current: 31.5A
On-state resistance: 10.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 21.5W
Polarisation: unipolar
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN3.3x3.3
кількість в упаковці: 1 шт
товар відсутній
AONR66406 |
Виробник: Alpha & Omega Semiconductor
N-Channel MOSFET
N-Channel MOSFET
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна без ПДВ |
---|---|
5000+ | 8.57 грн |
AONR66406 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 30A; 10.5W; DFN8; 3x3mm
Dimensions: 3x3mm
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 10.5W
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN8
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 30A; 10.5W; DFN8; 3x3mm
Dimensions: 3x3mm
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 10.5W
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN8
товар відсутній
AONR66406 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 30A; 10.5W; DFN8; 3x3mm
Dimensions: 3x3mm
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 10.5W
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN8
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 30A; 10.5W; DFN8; 3x3mm
Dimensions: 3x3mm
Drain-source voltage: 40V
Drain current: 30A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 10.5W
Polarisation: unipolar
Gate charge: 20nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: DFN8
кількість в упаковці: 1 шт
товар відсутній
AONR66922 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; 20.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Power dissipation: 20.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 32.5nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; 20.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Power dissipation: 20.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 32.5nC
Kind of channel: enhanced
товар відсутній
AONR66922 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; 20.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Power dissipation: 20.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 32.5nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; 20.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Power dissipation: 20.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 32.5nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
AONS21307 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -24A; 15W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -24A
Power dissipation: 15W
Case: DFN5x6
Gate-source voltage: ±25V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -24A; 15W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -24A
Power dissipation: 15W
Case: DFN5x6
Gate-source voltage: ±25V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
товар відсутній
AONS21307 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -24A; 15W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -24A
Power dissipation: 15W
Case: DFN5x6
Gate-source voltage: ±25V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -24A; 15W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -24A
Power dissipation: 15W
Case: DFN5x6
Gate-source voltage: ±25V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 17nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
AONS21321 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 9.8W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 9.8W
Case: DFN5x6
Gate-source voltage: ±25V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 9.8W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 9.8W
Case: DFN5x6
Gate-source voltage: ±25V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
товар відсутній
AONS21321 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 9.8W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 9.8W
Case: DFN5x6
Gate-source voltage: ±25V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -20A; 9.8W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -20A
Power dissipation: 9.8W
Case: DFN5x6
Gate-source voltage: ±25V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 11nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній
AONS21357 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -36A; 19W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -36A
Power dissipation: 19W
Case: DFN5x6
Gate-source voltage: ±25V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -36A; 19W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -36A
Power dissipation: 19W
Case: DFN5x6
Gate-source voltage: ±25V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhanced
товар відсутній
AONS21357 |
Виробник: ALPHA & OMEGA SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -36A; 19W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -36A
Power dissipation: 19W
Case: DFN5x6
Gate-source voltage: ±25V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -36A; 19W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -36A
Power dissipation: 19W
Case: DFN5x6
Gate-source voltage: ±25V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 25nC
Kind of channel: enhanced
кількість в упаковці: 1 шт
товар відсутній