| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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| BXS105N10B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8 Gate charge: 71nC On-state resistance: 10.5mΩ Power dissipation: 3.5W Drain current: 14A Gate-source voltage: ±20V Pulsed drain current: 56A Drain-source voltage: 100V Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel Case: SOP8 Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXS1150N10M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.6A Pulsed drain current: 15.6A Power dissipation: 2.5W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 16.3nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 10769 шт: термін постачання 21-30 дні (днів) |
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BXS1150N10M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.6A Pulsed drain current: 15.6A Power dissipation: 2.5W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 16.3nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 10769 шт: термін постачання 14-21 дні (днів) |
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| BXS130N10C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Pulsed drain current: 208A Power dissipation: 57W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXS160N10C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Drain-source voltage: 100V Kind of channel: enhancement Mounting: SMD Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXS230N10B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: SMD Kind of channel: enhancement |
на замовлення 1611 шт: термін постачання 21-30 дні (днів) |
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BXS230N10B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: SMD Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1611 шт: термін постачання 14-21 дні (днів) |
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| BXT020N03C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 130A; Idm: 520A; 120W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 130A Pulsed drain current: 520A Power dissipation: 120W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT030N03C | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 59A; Idm: 360A; 44.6W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 59A Pulsed drain current: 360A Power dissipation: 44.6W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT040N03C | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT060N03B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 80A; 4.5W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Power dissipation: 4.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel Kind of channel: enhancement Pulsed drain current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT070N06D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 108W Case: TO252 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 88nC Kind of package: reel Kind of channel: enhancement Pulsed drain current: 320A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT080N03E | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 120A; 12W; PDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 120A Power dissipation: 12W Case: PDFN8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 13.2nC Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXT090N06B | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Pulsed drain current: 68A Power dissipation: 4.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 99nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BXT1000N06M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 5.2nC On-state resistance: 0.11Ω Power dissipation: 1.5W Drain current: 2A Pulsed drain current: 12A Gate-source voltage: ±20V Drain-source voltage: 60V Case: SOT23-3 |
на замовлення 1301 шт: термін постачання 21-30 дні (днів) |
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BXT1000N06M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3 Kind of package: reel; tape Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 5.2nC On-state resistance: 0.11Ω Power dissipation: 1.5W Drain current: 2A Pulsed drain current: 12A Gate-source voltage: ±20V Drain-source voltage: 60V Case: SOT23-3 кількість в упаковці: 1 шт |
на замовлення 1301 шт: термін постачання 14-21 дні (днів) |
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| BXT1100P02M | BRIDGELUX |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Case: SOT23 Gate-source voltage: ±10V Mounting: SMD Kind of channel: enhancement Power dissipation: 1.25W Pulsed drain current: -10A Kind of package: reel On-state resistance: 0.11Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT110P03E | BRIDGELUX |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -35A; PDFN33 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Case: PDFN33 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXT1150N10D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12.8A Pulsed drain current: 64A Power dissipation: 78W Case: TO252 Gate-source voltage: ±20V On-state resistance: 135mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 4404 шт: термін постачання 21-30 дні (днів) |
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BXT1150N10D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 12.8A Pulsed drain current: 64A Power dissipation: 78W Case: TO252 Gate-source voltage: ±20V On-state resistance: 135mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 4404 шт: термін постачання 14-21 дні (днів) |
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BXT1150N10J | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.6A Pulsed drain current: 32A Power dissipation: 2W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 135mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 7720 шт: термін постачання 21-30 дні (днів) |
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BXT1150N10J | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.6A Pulsed drain current: 32A Power dissipation: 2W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 135mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 7720 шт: термін постачання 14-21 дні (днів) |
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BXT1700P06M | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W Kind of channel: enhancement Case: SOT23-3 Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -16A Drain current: -2.8A Gate charge: 22nC On-state resistance: 0.17Ω Power dissipation: 1.5W Gate-source voltage: ±20V |
на замовлення 2930 шт: термін постачання 21-30 дні (днів) |
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BXT1700P06M | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W Kind of channel: enhancement Case: SOT23-3 Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: -60V Pulsed drain current: -16A Drain current: -2.8A Gate charge: 22nC On-state resistance: 0.17Ω Power dissipation: 1.5W Gate-source voltage: ±20V кількість в упаковці: 1 шт |
на замовлення 2930 шт: термін постачання 14-21 дні (днів) |
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| BXT170N06D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252 Kind of channel: enhancement Case: TO252 Type of transistor: N-MOSFET Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain-source voltage: 60V Pulsed drain current: 200A Drain current: 33A Gate charge: 49nC On-state resistance: 25mΩ Power dissipation: 94W Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXT210N02M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel Mounting: SMD Polarisation: unipolar Gate charge: 12.1nC On-state resistance: 21mΩ Power dissipation: 1.6W Drain current: 6.8A Gate-source voltage: ±12V Drain-source voltage: 20V Pulsed drain current: 27.2A Case: SOT23 |
на замовлення 11934 шт: термін постачання 21-30 дні (днів) |
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BXT210N02M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel Mounting: SMD Polarisation: unipolar Gate charge: 12.1nC On-state resistance: 21mΩ Power dissipation: 1.6W Drain current: 6.8A Gate-source voltage: ±12V Drain-source voltage: 20V Pulsed drain current: 27.2A Case: SOT23 кількість в упаковці: 1 шт |
на замовлення 11934 шт: термін постачання 14-21 дні (днів) |
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BXT230P03B | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Pulsed drain current: -40A Power dissipation: 3.9W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1994 шт: термін постачання 21-30 дні (днів) |
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BXT230P03B | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Pulsed drain current: -40A Power dissipation: 3.9W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1994 шт: термін постачання 14-21 дні (днів) |
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| BXT250N03B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT250N03M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXT270N02M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 18A; 1W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.6A Pulsed drain current: 18A Power dissipation: 1W Case: SOT23-3 Gate-source voltage: ±12V On-state resistance: 44mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 5.8nC |
на замовлення 5970 шт: термін постачання 21-30 дні (днів) |
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BXT270N02M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 18A; 1W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.6A Pulsed drain current: 18A Power dissipation: 1W Case: SOT23-3 Gate-source voltage: ±12V On-state resistance: 44mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 5.8nC кількість в упаковці: 1 шт |
на замовлення 5970 шт: термін постачання 14-21 дні (днів) |
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| BXT2800N10D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXT2800N10M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 1.4A; Idm: 8.8A; 2.8W; SOT23-3 Power dissipation: 2.8W Mounting: SMD Type of transistor: N-MOSFET Case: SOT23-3 Kind of package: reel; tape Polarisation: unipolar Gate charge: 12nC On-state resistance: 0.31Ω Drain current: 1.4A Pulsed drain current: 8.8A Gate-source voltage: ±20V Drain-source voltage: 100V Kind of channel: enhancement |
на замовлення 4069 шт: термін постачання 21-30 дні (днів) |
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BXT2800N10M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 1.4A; Idm: 8.8A; 2.8W; SOT23-3 Power dissipation: 2.8W Mounting: SMD Type of transistor: N-MOSFET Case: SOT23-3 Kind of package: reel; tape Polarisation: unipolar Gate charge: 12nC On-state resistance: 0.31Ω Drain current: 1.4A Pulsed drain current: 8.8A Gate-source voltage: ±20V Drain-source voltage: 100V Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 4069 шт: термін постачання 14-21 дні (днів) |
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BXT280N02B | BRIDGELUX |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.6W Case: SOP8 Mounting: SMD Kind of package: reel; tape On-state resistance: 38mΩ Gate charge: 5.5nC Drain current: 4A Pulsed drain current: 24A Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement |
на замовлення 509 шт: термін постачання 21-30 дні (днів) |
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BXT280N02B | BRIDGELUX |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Power dissipation: 1.6W Case: SOP8 Mounting: SMD Kind of package: reel; tape On-state resistance: 38mΩ Gate charge: 5.5nC Drain current: 4A Pulsed drain current: 24A Gate-source voltage: ±12V Drain-source voltage: 20V Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 509 шт: термін постачання 14-21 дні (днів) |
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| BXT280N03M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.6A Case: SOT23 Gate-source voltage: ±12V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXT2N7002BK | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Pulsed drain current: 1.8A Power dissipation: 0.35W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.8nC |
на замовлення 8880 шт: термін постачання 21-30 дні (днів) |
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BXT2N7002BK | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Pulsed drain current: 1.8A Power dissipation: 0.35W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.8nC кількість в упаковці: 1 шт |
на замовлення 8880 шт: термін постачання 14-21 дні (днів) |
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| BXT2N7002T | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT2N7002T3 | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT320N02D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT330N02M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 24A; 1.25W; SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel Mounting: SMD Polarisation: unipolar Gate charge: 11nC On-state resistance: 33mΩ Power dissipation: 1.25W Drain current: 6A Gate-source voltage: ±10V Drain-source voltage: 20V Pulsed drain current: 24A Case: SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT330N03M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Drain current: 4.5A Gate-source voltage: ±20V Drain-source voltage: 30V Case: SOT23 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT330N03N | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXT330N06D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 24.5nC On-state resistance: 45mΩ Power dissipation: 27.8W Drain current: 14A Gate-source voltage: ±20V Drain-source voltage: 60V Pulsed drain current: 80A Case: TO252 |
на замовлення 3845 шт: термін постачання 21-30 дні (днів) |
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BXT330N06D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 24.5nC On-state resistance: 45mΩ Power dissipation: 27.8W Drain current: 14A Gate-source voltage: ±20V Drain-source voltage: 60V Pulsed drain current: 80A Case: TO252 кількість в упаковці: 1 шт |
на замовлення 3845 шт: термін постачання 14-21 дні (днів) |
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| BXT3800P06M | BRIDGELUX | BXT3800P06M SMD P channel transistors |
на замовлення 6659 шт: термін постачання 14-21 дні (днів) |
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BXT420N03M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Pulsed drain current: 16A Power dissipation: 1.1W Case: SOT23-3 Gate-source voltage: ±12V On-state resistance: 70mΩ Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 10793 шт: термін постачання 21-30 дні (днів) |
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BXT420N03M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Pulsed drain current: 16A Power dissipation: 1.1W Case: SOT23-3 Gate-source voltage: ±12V On-state resistance: 70mΩ Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 10793 шт: термін постачання 14-21 дні (днів) |
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| BXT520P02M | BRIDGELUX | BXT520P02M SMD P channel transistors |
на замовлення 54 шт: термін постачання 14-21 дні (днів) |
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BXT600P03M | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W Mounting: SMD Kind of package: reel; tape Case: SOT23-3 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -16.4A Drain current: -2.7A Gate charge: 6.8nC On-state resistance: 85mΩ Power dissipation: 1.51W Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: P-MOSFET |
на замовлення 2600 шт: термін постачання 21-30 дні (днів) |
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BXT600P03M | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W Mounting: SMD Kind of package: reel; tape Case: SOT23-3 Polarisation: unipolar Drain-source voltage: -30V Pulsed drain current: -16.4A Drain current: -2.7A Gate charge: 6.8nC On-state resistance: 85mΩ Power dissipation: 1.51W Gate-source voltage: ±20V Kind of channel: enhancement Type of transistor: P-MOSFET кількість в упаковці: 1 шт |
на замовлення 2600 шт: термін постачання 14-21 дні (днів) |
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BXT900P06D | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; TO252 Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Drain-source voltage: -60V Polarisation: unipolar Kind of channel: enhancement Case: TO252 |
на замовлення 2490 шт: термін постачання 21-30 дні (днів) |
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BXT900P06D | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; TO252 Type of transistor: P-MOSFET Mounting: SMD Kind of package: reel; tape Drain-source voltage: -60V Polarisation: unipolar Kind of channel: enhancement Case: TO252 кількість в упаковці: 1 шт |
на замовлення 2490 шт: термін постачання 14-21 дні (днів) |
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BXW10M1K2H | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W Polarisation: unipolar Case: TO247-3 Gate-source voltage: -3...20V Gate charge: 29nC On-state resistance: 610mΩ Drain current: 10A Pulsed drain current: 40A Power dissipation: 80.6W Drain-source voltage: 1.2kV Kind of package: tube Kind of channel: enhancement Type of transistor: N-MOSFET Technology: SiC Mounting: THT |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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OLMA-40C000-A01A-AA000 | Bridgelux |
Description: LED MOD OLM 4000K 70CRI A01A |
на замовлення 47 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||||||
|
OLMA-40C000-A06A-AA000 | Bridgelux |
Description: LED MOD OLM 4000K 70CRI A06A |
на замовлення 45 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. |
| BXS105N10B |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8
Gate charge: 71nC
On-state resistance: 10.5mΩ
Power dissipation: 3.5W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 56A
Drain-source voltage: 100V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
Case: SOP8
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8
Gate charge: 71nC
On-state resistance: 10.5mΩ
Power dissipation: 3.5W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 56A
Drain-source voltage: 100V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
Case: SOP8
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| BXS1150N10M |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Pulsed drain current: 15.6A
Power dissipation: 2.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Pulsed drain current: 15.6A
Power dissipation: 2.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 10769 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 32.48 грн |
| 27+ | 15.00 грн |
| 38+ | 10.51 грн |
| 100+ | 7.49 грн |
| 250+ | 3.75 грн |
| 430+ | 2.17 грн |
| 1182+ | 2.05 грн |
| BXS1150N10M |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Pulsed drain current: 15.6A
Power dissipation: 2.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 2.6A
Pulsed drain current: 15.6A
Power dissipation: 2.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 10769 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 8+ | 38.97 грн |
| 16+ | 18.69 грн |
| 25+ | 12.61 грн |
| 100+ | 8.99 грн |
| 250+ | 4.49 грн |
| 430+ | 2.60 грн |
| 1182+ | 2.46 грн |
| BXS130N10C |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 208A
Power dissipation: 57W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 208A
Power dissipation: 57W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXS160N10C |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Drain-source voltage: 100V
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| BXS230N10B |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
на замовлення 1611 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.20 грн |
| 19+ | 21.51 грн |
| 29+ | 13.89 грн |
| 100+ | 10.00 грн |
| 250+ | 8.81 грн |
| 1000+ | 7.62 грн |
| BXS230N10B |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1611 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.84 грн |
| 12+ | 26.80 грн |
| 25+ | 16.67 грн |
| 100+ | 12.00 грн |
| 250+ | 10.57 грн |
| 1000+ | 9.14 грн |
| 2000+ | 9.05 грн |
| BXT020N03C |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 130A; Idm: 520A; 120W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 120W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 130A; Idm: 520A; 120W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 120W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT030N03C |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 59A; Idm: 360A; 44.6W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 59A
Pulsed drain current: 360A
Power dissipation: 44.6W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 59A; Idm: 360A; 44.6W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 59A
Pulsed drain current: 360A
Power dissipation: 44.6W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT040N03C |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT060N03B |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 80A; 4.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 4.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 80A; 4.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 4.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 80A
товару немає в наявності
В кошику
од. на суму грн.
| BXT070N06D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 108W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 320A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 108W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 320A
товару немає в наявності
В кошику
од. на суму грн.
| BXT080N03E |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 120A; 12W; PDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 12W
Case: PDFN8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 120A; 12W; PDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 12W
Case: PDFN8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT090N06B |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 4.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 4.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT1000N06M |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.2nC
On-state resistance: 0.11Ω
Power dissipation: 1.5W
Drain current: 2A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Case: SOT23-3
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.2nC
On-state resistance: 0.11Ω
Power dissipation: 1.5W
Drain current: 2A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Case: SOT23-3
на замовлення 1301 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.38 грн |
| 36+ | 11.19 грн |
| 100+ | 7.44 грн |
| 500+ | 5.21 грн |
| 1000+ | 3.13 грн |
| BXT1000N06M |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.2nC
On-state resistance: 0.11Ω
Power dissipation: 1.5W
Drain current: 2A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Case: SOT23-3
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Kind of package: reel; tape
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 5.2nC
On-state resistance: 0.11Ω
Power dissipation: 1.5W
Drain current: 2A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Case: SOT23-3
кількість в упаковці: 1 шт
на замовлення 1301 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 18.46 грн |
| 22+ | 13.94 грн |
| 100+ | 8.93 грн |
| 500+ | 6.26 грн |
| 1000+ | 3.75 грн |
| 3000+ | 3.38 грн |
| 6000+ | 2.98 грн |
| BXT1100P02M |
Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 1.25W
Pulsed drain current: -10A
Kind of package: reel
On-state resistance: 0.11Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 1.25W
Pulsed drain current: -10A
Kind of package: reel
On-state resistance: 0.11Ω
товару немає в наявності
В кошику
од. на суму грн.
| BXT110P03E |
Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; PDFN33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Case: PDFN33
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; PDFN33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Case: PDFN33
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT1150N10D |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.8A
Pulsed drain current: 64A
Power dissipation: 78W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.8A
Pulsed drain current: 64A
Power dissipation: 78W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 4404 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 17.95 грн |
| 28+ | 14.28 грн |
| 35+ | 11.43 грн |
| 100+ | 10.24 грн |
| 250+ | 8.57 грн |
| 500+ | 7.78 грн |
| 1000+ | 6.82 грн |
| 2500+ | 6.11 грн |
| BXT1150N10D |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.8A
Pulsed drain current: 64A
Power dissipation: 78W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 12.8A
Pulsed drain current: 64A
Power dissipation: 78W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 4404 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.54 грн |
| 17+ | 17.80 грн |
| 25+ | 13.71 грн |
| 100+ | 12.28 грн |
| 250+ | 10.29 грн |
| 500+ | 9.33 грн |
| 1000+ | 8.19 грн |
| BXT1150N10J |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Pulsed drain current: 32A
Power dissipation: 2W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Pulsed drain current: 32A
Power dissipation: 2W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 7720 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.11 грн |
| 46+ | 8.65 грн |
| 58+ | 6.92 грн |
| 100+ | 6.20 грн |
| 250+ | 5.17 грн |
| 500+ | 4.63 грн |
| 1000+ | 4.33 грн |
| 3000+ | 4.09 грн |
| 4000+ | 3.73 грн |
| BXT1150N10J |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Pulsed drain current: 32A
Power dissipation: 2W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.6A
Pulsed drain current: 32A
Power dissipation: 2W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 135mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 7720 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.33 грн |
| 28+ | 10.78 грн |
| 35+ | 8.30 грн |
| 100+ | 7.44 грн |
| 250+ | 6.21 грн |
| 500+ | 5.56 грн |
| 1000+ | 5.20 грн |
| BXT1700P06M |
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Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Kind of channel: enhancement
Case: SOT23-3
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -16A
Drain current: -2.8A
Gate charge: 22nC
On-state resistance: 0.17Ω
Power dissipation: 1.5W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Kind of channel: enhancement
Case: SOT23-3
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -16A
Drain current: -2.8A
Gate charge: 22nC
On-state resistance: 0.17Ω
Power dissipation: 1.5W
Gate-source voltage: ±20V
на замовлення 2930 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 13.67 грн |
| 37+ | 10.87 грн |
| 46+ | 8.73 грн |
| 100+ | 7.78 грн |
| 250+ | 6.51 грн |
| 500+ | 5.87 грн |
| 1000+ | 5.24 грн |
| BXT1700P06M |
![]() |
Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Kind of channel: enhancement
Case: SOT23-3
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -16A
Drain current: -2.8A
Gate charge: 22nC
On-state resistance: 0.17Ω
Power dissipation: 1.5W
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Kind of channel: enhancement
Case: SOT23-3
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -16A
Drain current: -2.8A
Gate charge: 22nC
On-state resistance: 0.17Ω
Power dissipation: 1.5W
Gate-source voltage: ±20V
кількість в упаковці: 1 шт
на замовлення 2930 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 16.41 грн |
| 22+ | 13.55 грн |
| 28+ | 10.48 грн |
| 100+ | 9.33 грн |
| 250+ | 7.81 грн |
| 500+ | 7.05 грн |
| 1000+ | 6.29 грн |
| BXT170N06D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252
Kind of channel: enhancement
Case: TO252
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 200A
Drain current: 33A
Gate charge: 49nC
On-state resistance: 25mΩ
Power dissipation: 94W
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252
Kind of channel: enhancement
Case: TO252
Type of transistor: N-MOSFET
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 200A
Drain current: 33A
Gate charge: 49nC
On-state resistance: 25mΩ
Power dissipation: 94W
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.
| BXT210N02M |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 21mΩ
Power dissipation: 1.6W
Drain current: 6.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 27.2A
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 21mΩ
Power dissipation: 1.6W
Drain current: 6.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 27.2A
Case: SOT23
на замовлення 11934 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.22 грн |
| 30+ | 13.25 грн |
| 60+ | 6.63 грн |
| 100+ | 3.98 грн |
| 250+ | 2.65 грн |
| 431+ | 2.17 грн |
| 1000+ | 2.12 грн |
| 1186+ | 2.05 грн |
| 3000+ | 1.97 грн |
| BXT210N02M |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 21mΩ
Power dissipation: 1.6W
Drain current: 6.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 27.2A
Case: SOT23
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 21mΩ
Power dissipation: 1.6W
Drain current: 6.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 27.2A
Case: SOT23
кількість в упаковці: 1 шт
на замовлення 11934 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.67 грн |
| 18+ | 16.52 грн |
| 36+ | 7.96 грн |
| 100+ | 4.77 грн |
| 250+ | 3.18 грн |
| 431+ | 2.60 грн |
| 1000+ | 2.54 грн |
| BXT230P03B |
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Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -40A
Power dissipation: 3.9W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -40A
Power dissipation: 3.9W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1994 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.22 грн |
| 25+ | 16.51 грн |
| 29+ | 14.13 грн |
| 100+ | 11.27 грн |
| 127+ | 7.38 грн |
| 349+ | 6.90 грн |
| BXT230P03B |
![]() |
Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -40A
Power dissipation: 3.9W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -40A
Power dissipation: 3.9W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1994 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.67 грн |
| 15+ | 20.57 грн |
| 25+ | 16.95 грн |
| 100+ | 13.52 грн |
| 127+ | 8.86 грн |
| 349+ | 8.29 грн |
| 2000+ | 8.09 грн |
| BXT250N03B |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT250N03M |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT270N02M |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 18A; 1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 44mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 18A; 1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 44mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.8nC
на замовлення 5970 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 23.93 грн |
| 36+ | 11.27 грн |
| 50+ | 7.94 грн |
| 100+ | 5.63 грн |
| 250+ | 2.82 грн |
| 500+ | 2.13 грн |
| 572+ | 1.63 грн |
| 1572+ | 1.54 грн |
| BXT270N02M |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 18A; 1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 44mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.8nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.6A; Idm: 18A; 1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 44mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 5.8nC
кількість в упаковці: 1 шт
на замовлення 5970 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 28.72 грн |
| 22+ | 14.04 грн |
| 30+ | 9.52 грн |
| 100+ | 6.76 грн |
| 250+ | 3.38 грн |
| 500+ | 2.55 грн |
| 572+ | 1.95 грн |
| BXT2800N10D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT2800N10M |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; Idm: 8.8A; 2.8W; SOT23-3
Power dissipation: 2.8W
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23-3
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 0.31Ω
Drain current: 1.4A
Pulsed drain current: 8.8A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; Idm: 8.8A; 2.8W; SOT23-3
Power dissipation: 2.8W
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23-3
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 0.31Ω
Drain current: 1.4A
Pulsed drain current: 8.8A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
на замовлення 4069 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.69 грн |
| 79+ | 5.08 грн |
| 100+ | 4.00 грн |
| 111+ | 3.59 грн |
| 250+ | 3.02 грн |
| 450+ | 2.07 грн |
| 1236+ | 1.96 грн |
| BXT2800N10M |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; Idm: 8.8A; 2.8W; SOT23-3
Power dissipation: 2.8W
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23-3
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 0.31Ω
Drain current: 1.4A
Pulsed drain current: 8.8A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; Idm: 8.8A; 2.8W; SOT23-3
Power dissipation: 2.8W
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23-3
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 0.31Ω
Drain current: 1.4A
Pulsed drain current: 8.8A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 4069 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 9.23 грн |
| 47+ | 6.33 грн |
| 60+ | 4.80 грн |
| 100+ | 4.30 грн |
| 250+ | 3.62 грн |
| 450+ | 2.49 грн |
| 1236+ | 2.35 грн |
| BXT280N02B |
![]() |
Виробник: BRIDGELUX
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.6W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 38mΩ
Gate charge: 5.5nC
Drain current: 4A
Pulsed drain current: 24A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.6W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 38mΩ
Gate charge: 5.5nC
Drain current: 4A
Pulsed drain current: 24A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
на замовлення 509 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 30+ | 14.53 грн |
| 37+ | 10.95 грн |
| 43+ | 9.36 грн |
| 100+ | 7.48 грн |
| 220+ | 4.27 грн |
| BXT280N02B |
![]() |
Виробник: BRIDGELUX
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.6W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 38mΩ
Gate charge: 5.5nC
Drain current: 4A
Pulsed drain current: 24A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Power dissipation: 1.6W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 38mΩ
Gate charge: 5.5nC
Drain current: 4A
Pulsed drain current: 24A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 509 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 18+ | 17.43 грн |
| 22+ | 13.65 грн |
| 26+ | 11.24 грн |
| 100+ | 8.97 грн |
| 220+ | 5.12 грн |
| 603+ | 4.84 грн |
| 4000+ | 4.80 грн |
| BXT280N03M |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT2N7002BK |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.8nC
на замовлення 8880 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 62+ | 6.95 грн |
| 129+ | 3.10 грн |
| 187+ | 2.13 грн |
| 231+ | 1.72 грн |
| 307+ | 1.29 грн |
| 500+ | 1.16 грн |
| 1000+ | 1.02 грн |
| 1051+ | 0.89 грн |
| 2889+ | 0.84 грн |
| BXT2N7002BK |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.8nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.8nC
кількість в упаковці: 1 шт
на замовлення 8880 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 8.34 грн |
| 77+ | 3.86 грн |
| 112+ | 2.55 грн |
| 139+ | 2.07 грн |
| 250+ | 1.55 грн |
| 500+ | 1.39 грн |
| 1000+ | 1.23 грн |
| BXT2N7002T |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT2N7002T3 |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT320N02D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT330N02M |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 24A; 1.25W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 33mΩ
Power dissipation: 1.25W
Drain current: 6A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Pulsed drain current: 24A
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6A; Idm: 24A; 1.25W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 33mΩ
Power dissipation: 1.25W
Drain current: 6A
Gate-source voltage: ±10V
Drain-source voltage: 20V
Pulsed drain current: 24A
Case: SOT23
товару немає в наявності
В кошику
од. на суму грн.
| BXT330N03M |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 4.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.5A; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 4.5A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Case: SOT23
товару немає в наявності
В кошику
од. на суму грн.
| BXT330N03N |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT330N06D |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 24.5nC
On-state resistance: 45mΩ
Power dissipation: 27.8W
Drain current: 14A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 80A
Case: TO252
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 24.5nC
On-state resistance: 45mΩ
Power dissipation: 27.8W
Drain current: 14A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 80A
Case: TO252
на замовлення 3845 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 19.66 грн |
| 29+ | 14.13 грн |
| 36+ | 11.27 грн |
| 100+ | 10.08 грн |
| 250+ | 8.49 грн |
| 500+ | 7.62 грн |
| 1000+ | 6.75 грн |
| 2500+ | 6.03 грн |
| BXT330N06D |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 24.5nC
On-state resistance: 45mΩ
Power dissipation: 27.8W
Drain current: 14A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 80A
Case: TO252
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 14A; Idm: 80A; 27.8W; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 24.5nC
On-state resistance: 45mΩ
Power dissipation: 27.8W
Drain current: 14A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Pulsed drain current: 80A
Case: TO252
кількість в упаковці: 1 шт
на замовлення 3845 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 23.59 грн |
| 17+ | 17.60 грн |
| 25+ | 13.52 грн |
| 100+ | 12.09 грн |
| 250+ | 10.19 грн |
| 500+ | 9.14 грн |
| 1000+ | 8.09 грн |
| BXT3800P06M |
Виробник: BRIDGELUX
BXT3800P06M SMD P channel transistors
BXT3800P06M SMD P channel transistors
на замовлення 6659 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 14+ | 22.67 грн |
| 163+ | 6.95 грн |
| 447+ | 6.57 грн |
| BXT420N03M |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 1.1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 1.1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 10793 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 36+ | 11.97 грн |
| 75+ | 5.32 грн |
| 106+ | 3.75 грн |
| 133+ | 2.98 грн |
| 250+ | 2.67 грн |
| 500+ | 2.25 грн |
| 546+ | 1.71 грн |
| 1500+ | 1.63 грн |
| BXT420N03M |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 1.1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 16A; 1.1W; SOT23-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 2.6A
Pulsed drain current: 16A
Power dissipation: 1.1W
Case: SOT23-3
Gate-source voltage: ±12V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 10793 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 22+ | 14.36 грн |
| 45+ | 6.63 грн |
| 64+ | 4.49 грн |
| 100+ | 3.58 грн |
| 250+ | 3.21 грн |
| 500+ | 2.70 грн |
| 546+ | 2.06 грн |
| BXT520P02M |
Виробник: BRIDGELUX
BXT520P02M SMD P channel transistors
BXT520P02M SMD P channel transistors
на замовлення 54 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 16.33 грн |
| 498+ | 2.26 грн |
| 1369+ | 2.13 грн |
| BXT600P03M |
![]() |
Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Mounting: SMD
Kind of package: reel; tape
Case: SOT23-3
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -16.4A
Drain current: -2.7A
Gate charge: 6.8nC
On-state resistance: 85mΩ
Power dissipation: 1.51W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Mounting: SMD
Kind of package: reel; tape
Case: SOT23-3
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -16.4A
Drain current: -2.7A
Gate charge: 6.8nC
On-state resistance: 85mΩ
Power dissipation: 1.51W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
на замовлення 2600 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.38 грн |
| 57+ | 7.06 грн |
| 81+ | 4.95 грн |
| 101+ | 3.94 грн |
| 250+ | 3.52 грн |
| 500+ | 2.96 грн |
| 1000+ | 2.67 грн |
| BXT600P03M |
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Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Mounting: SMD
Kind of package: reel; tape
Case: SOT23-3
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -16.4A
Drain current: -2.7A
Gate charge: 6.8nC
On-state resistance: 85mΩ
Power dissipation: 1.51W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; Idm: -16.4A; 1.51W
Mounting: SMD
Kind of package: reel; tape
Case: SOT23-3
Polarisation: unipolar
Drain-source voltage: -30V
Pulsed drain current: -16.4A
Drain current: -2.7A
Gate charge: 6.8nC
On-state resistance: 85mΩ
Power dissipation: 1.51W
Gate-source voltage: ±20V
Kind of channel: enhancement
Type of transistor: P-MOSFET
кількість в упаковці: 1 шт
на замовлення 2600 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 18.46 грн |
| 34+ | 8.80 грн |
| 49+ | 5.94 грн |
| 100+ | 4.73 грн |
| 250+ | 4.23 грн |
| 500+ | 3.55 грн |
| 1000+ | 3.20 грн |
| BXT900P06D |
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Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; TO252
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Polarisation: unipolar
Kind of channel: enhancement
Case: TO252
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; TO252
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Polarisation: unipolar
Kind of channel: enhancement
Case: TO252
на замовлення 2490 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 39.31 грн |
| 19+ | 21.27 грн |
| 25+ | 18.09 грн |
| 100+ | 14.44 грн |
| 250+ | 12.94 грн |
| 500+ | 10.87 грн |
| 1000+ | 9.76 грн |
| BXT900P06D |
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Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; TO252
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Polarisation: unipolar
Kind of channel: enhancement
Case: TO252
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; TO252
Type of transistor: P-MOSFET
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -60V
Polarisation: unipolar
Kind of channel: enhancement
Case: TO252
кількість в упаковці: 1 шт
на замовлення 2490 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 47.18 грн |
| 12+ | 26.50 грн |
| 25+ | 21.71 грн |
| 100+ | 17.33 грн |
| 250+ | 15.52 грн |
| 500+ | 13.05 грн |
| 1000+ | 11.71 грн |
| BXW10M1K2H |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W
Polarisation: unipolar
Case: TO247-3
Gate-source voltage: -3...20V
Gate charge: 29nC
On-state resistance: 610mΩ
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 80.6W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 10A; Idm: 40A; 80.6W
Polarisation: unipolar
Case: TO247-3
Gate-source voltage: -3...20V
Gate charge: 29nC
On-state resistance: 610mΩ
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 80.6W
Drain-source voltage: 1.2kV
Kind of package: tube
Kind of channel: enhancement
Type of transistor: N-MOSFET
Technology: SiC
Mounting: THT
товару немає в наявності
В кошику
од. на суму грн.
| OLMA-40C000-A01A-AA000 |
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Виробник: Bridgelux
Description: LED MOD OLM 4000K 70CRI A01A
Description: LED MOD OLM 4000K 70CRI A01A
на замовлення 47 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| OLMA-40C000-A06A-AA000 |
![]() |
Виробник: Bridgelux
Description: LED MOD OLM 4000K 70CRI A06A
Description: LED MOD OLM 4000K 70CRI A06A
на замовлення 45 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.














