| Фото | Назва | Виробник | Інформація |
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BXRV-TR-2765S-20A0-A-23 | BRIDGELUX |
Category: White power LEDs - COBDescription: Power LED; white warm/cold white; COB,bicolour; 17.6/18.2W Type of diode: power LED LED colour: white warm/cold white LED version: bicolour; COB Colour temperature: 2700-6500K Luminosity: 1723lm; 2001lm Min. colour rendering index: 95 Front: flat LED current: 500mA Dimensions: 18.8x18.8x1.65mm Operating voltage: 33.2...37.4/34.1...38.5V DC Manufacturer series: Vesta Tunable White Storage temperature: 40...105°C Power: 17.6/18.2W кількість в упаковці: 1 шт |
на замовлення 5 шт: термін постачання 14-21 дні (днів) |
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BXRV-TR-2765S-20A0-A-23-S2 | Bridgelux |
Description: LED COB VESTA WHITE ROUND 6500KPackaging: Tray Features: With Holder Color: White, Warm / White, Cool Size / Dimension: 36.20mm Dia Type: Chip On Board (COB) Configuration: Round Voltage - Forward (Vf) (Typ): 35.2V Warm White, 36.3V Cool White Height: 3.80mm Current - Test: 500mA Viewing Angle: 130° Lens Type: Flat Current - Max: 700mA Lumens/Watt @ Current - Test: 98 lm/W Warm White, 110 lm/W Cool White CCT (K): 2700K 3-Step MacAdam Ellipse, 6500K 3-Step MacAdam Ellipse CRI (Color Rendering Index): 95 Light Emitting Surface (LES): 14.30mm Dia Temperature - Test: 25°C Luminous Flux @ Current/Temperature: 1550lm Warm White, 1801lm Cool White Part Status: Active |
на замовлення 33 шт: термін постачання 21-31 дні (днів) |
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| BXRV-TR-2765S-40A0-A-23 | Bridgelux |
Description: TW18 TUNABLE WHITE ARRAY (DP) Packaging: Tray Color: White, Warm / White, Cool Size / Dimension: 24.00mm L x 24.00mm W Type: Chip On Board (COB) Configuration: Square Voltage - Forward (Vf) (Typ): 35.3V Height: 1.65mm Current - Test: 900mA Viewing Angle: 130° Lens Type: Flat Current - Max: 1.4A Lumens/Watt @ Current - Test: 118 lm/W CCT (K): 1800K, 4000K CRI (Color Rendering Index): 90 Light Emitting Surface (LES): 19.70mm Dia Temperature - Test: 25°C Luminous Flux @ Current/Temperature: 3741lm (Typ) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXRV-TR-2765S-40A0-A-23-S2 | Bridgelux |
Description: TW ARRAY, LES=18MM, INTEGRATED H Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXS028N10P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXS030N08P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 220A; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 220A Case: TO220 Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXS030N10P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 210A; TO220 Type of transistor: N-MOSFET Case: TO220 Mounting: THT Polarisation: unipolar Gate-source voltage: ±20V Drain current: 210A Drain-source voltage: 100V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXS035N10BP | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXS035N10C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 165A; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 165A Case: PDFN56 Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXS040N08P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 170A; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 170A Case: TO220 Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXS040N10P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Case: TO220 Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXS045N10C | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 600A; 167W; PDFN56 Case: PDFN56 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate-source voltage: ±20V Gate charge: 75nC On-state resistance: 7.5mΩ Power dissipation: 167W Drain current: 117A Drain-source voltage: 100V Pulsed drain current: 600A Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXS049N08P | BRIDGELUX | BXS049N08P THT N channel transistors |
на замовлення 865 шт: термін постачання 14-21 дні (днів) |
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| BXS050N10BP | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXS050N10D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXS055N08P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Case: TO220 Gate-source voltage: ±20V Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXS075N10C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 79A; Idm: 600A; 78W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 79A Pulsed drain current: 600A Power dissipation: 78W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 7.5mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXS080N10C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 79A; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 79A Case: PDFN56 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXS105N10B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8 Case: SOP8 Polarisation: unipolar Kind of channel: enhancement Gate charge: 71nC On-state resistance: 10.5mΩ Power dissipation: 3.5W Drain current: 14A Gate-source voltage: ±20V Pulsed drain current: 56A Drain-source voltage: 100V Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXS1150N10M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Case: SOT23-3 Polarisation: unipolar Gate charge: 16.3nC On-state resistance: 0.15Ω Power dissipation: 2.5W Drain current: 2.6A Pulsed drain current: 15.6A Gate-source voltage: ±20V Drain-source voltage: 100V |
на замовлення 10749 шт: термін постачання 21-30 дні (днів) |
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BXS1150N10M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Case: SOT23-3 Polarisation: unipolar Gate charge: 16.3nC On-state resistance: 0.15Ω Power dissipation: 2.5W Drain current: 2.6A Pulsed drain current: 15.6A Gate-source voltage: ±20V Drain-source voltage: 100V кількість в упаковці: 1 шт |
на замовлення 10749 шт: термін постачання 14-21 дні (днів) |
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| BXS130N10C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 52A Pulsed drain current: 208A Power dissipation: 57W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXS160N10C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Mounting: SMD Drain-source voltage: 100V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXS230N10B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: SMD Kind of channel: enhancement |
на замовлення 1611 шт: термін постачання 21-30 дні (днів) |
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BXS230N10B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: SMD Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1611 шт: термін постачання 14-21 дні (днів) |
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| BXT020N03C | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 130A; Idm: 520A; 120W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 130A Pulsed drain current: 520A Power dissipation: 120W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 2mΩ Mounting: SMD Gate charge: 54nC Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT030N03C | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 59A; Idm: 360A; 44.6W; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 59A Pulsed drain current: 360A Power dissipation: 44.6W Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT040N03C | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Case: PDFN56 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT060N03B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 80A; 4.5W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 20A Power dissipation: 4.5W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel Kind of channel: enhancement Pulsed drain current: 80A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT070N06D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Power dissipation: 108W Case: TO252 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Gate charge: 88nC Kind of package: reel Kind of channel: enhancement Pulsed drain current: 320A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT080N03E | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 120A; 12W; PDFN8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 30A Pulsed drain current: 120A Power dissipation: 12W Case: PDFN8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 13.2nC Kind of package: reel Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXT090N06B | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Pulsed drain current: 68A Power dissipation: 4.8W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 99nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||||
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BXT1000N06M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23-3 Polarisation: unipolar Gate charge: 5.2nC On-state resistance: 0.11Ω Power dissipation: 1.5W Drain current: 2A Pulsed drain current: 12A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement |
на замовлення 1298 шт: термін постачання 21-30 дні (днів) |
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BXT1000N06M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOT23-3 Polarisation: unipolar Gate charge: 5.2nC On-state resistance: 0.11Ω Power dissipation: 1.5W Drain current: 2A Pulsed drain current: 12A Gate-source voltage: ±20V Drain-source voltage: 60V Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1298 шт: термін постачання 14-21 дні (днів) |
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| BXT1000N06N | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V Type of transistor: N-MOSFET Mounting: SMD Polarisation: unipolar Drain-source voltage: 60V Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT1100P02M | BRIDGELUX |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3A Case: SOT23 Gate-source voltage: ±10V Mounting: SMD Kind of channel: enhancement Power dissipation: 1.25W Pulsed drain current: -10A Kind of package: reel On-state resistance: 0.11Ω |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT110P03E | BRIDGELUX |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -35A; PDFN33 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -35A Case: PDFN33 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXT1150N10D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO252 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 21nC On-state resistance: 135mΩ Power dissipation: 78W Drain current: 12.8A Gate-source voltage: ±20V Pulsed drain current: 64A Drain-source voltage: 100V |
на замовлення 4402 шт: термін постачання 21-30 дні (днів) |
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BXT1150N10D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Case: TO252 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 21nC On-state resistance: 135mΩ Power dissipation: 78W Drain current: 12.8A Gate-source voltage: ±20V Pulsed drain current: 64A Drain-source voltage: 100V кількість в упаковці: 1 шт |
на замовлення 4402 шт: термін постачання 14-21 дні (днів) |
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BXT1150N10J | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3 Kind of channel: enhancement Type of transistor: N-MOSFET Case: SOT89-3 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 21nC On-state resistance: 135mΩ Power dissipation: 2W Drain current: 5.6A Gate-source voltage: ±20V Pulsed drain current: 32A Drain-source voltage: 100V |
на замовлення 7685 шт: термін постачання 21-30 дні (днів) |
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BXT1150N10J | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3 Kind of channel: enhancement Type of transistor: N-MOSFET Case: SOT89-3 Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 21nC On-state resistance: 135mΩ Power dissipation: 2W Drain current: 5.6A Gate-source voltage: ±20V Pulsed drain current: 32A Drain-source voltage: 100V кількість в упаковці: 1 шт |
на замовлення 7685 шт: термін постачання 14-21 дні (днів) |
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BXT1700P06M | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.8A Pulsed drain current: -16A Power dissipation: 1.5W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2805 шт: термін постачання 21-30 дні (днів) |
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BXT1700P06M | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -2.8A Pulsed drain current: -16A Power dissipation: 1.5W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 2805 шт: термін постачання 14-21 дні (днів) |
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| BXT170N06D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Power dissipation: 94W Case: TO252 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 49nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 200A |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXT210N02M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel Mounting: SMD Polarisation: unipolar Gate charge: 12.1nC On-state resistance: 21mΩ Power dissipation: 1.6W Drain current: 6.8A Gate-source voltage: ±12V Drain-source voltage: 20V Pulsed drain current: 27.2A Case: SOT23 |
на замовлення 11934 шт: термін постачання 21-30 дні (днів) |
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BXT210N02M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel Mounting: SMD Polarisation: unipolar Gate charge: 12.1nC On-state resistance: 21mΩ Power dissipation: 1.6W Drain current: 6.8A Gate-source voltage: ±12V Drain-source voltage: 20V Pulsed drain current: 27.2A Case: SOT23 кількість в упаковці: 1 шт |
на замовлення 11934 шт: термін постачання 14-21 дні (днів) |
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BXT230P03B | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Pulsed drain current: -40A Power dissipation: 3.9W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 1984 шт: термін постачання 21-30 дні (днів) |
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BXT230P03B | BRIDGELUX |
Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Pulsed drain current: -40A Power dissipation: 3.9W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 34mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 1984 шт: термін постачання 14-21 дні (днів) |
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| BXT250N03B | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT250N03M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
| BXT270N02M | BRIDGELUX | BXT270N02M SMD N channel transistors |
на замовлення 2865 шт: термін постачання 14-21 дні (днів) |
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| BXT2800N10D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
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BXT2800N10M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 1.4A; Idm: 8.8A; 2.8W; SOT23-3 Power dissipation: 2.8W Mounting: SMD Type of transistor: N-MOSFET Case: SOT23-3 Kind of package: reel; tape Polarisation: unipolar Gate charge: 12nC On-state resistance: 0.31Ω Drain current: 1.4A Pulsed drain current: 8.8A Gate-source voltage: ±20V Drain-source voltage: 100V Kind of channel: enhancement |
на замовлення 4069 шт: термін постачання 21-30 дні (днів) |
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BXT2800N10M | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 100V; 1.4A; Idm: 8.8A; 2.8W; SOT23-3 Power dissipation: 2.8W Mounting: SMD Type of transistor: N-MOSFET Case: SOT23-3 Kind of package: reel; tape Polarisation: unipolar Gate charge: 12nC On-state resistance: 0.31Ω Drain current: 1.4A Pulsed drain current: 8.8A Gate-source voltage: ±20V Drain-source voltage: 100V Kind of channel: enhancement кількість в упаковці: 1 шт |
на замовлення 4069 шт: термін постачання 14-21 дні (днів) |
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BXT280N02B | BRIDGELUX |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8 Polarisation: unipolar Case: SOP8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Gate charge: 5.5nC On-state resistance: 38mΩ Power dissipation: 1.6W Drain current: 4A Gate-source voltage: ±12V Drain-source voltage: 20V Pulsed drain current: 24A Kind of package: reel; tape |
на замовлення 509 шт: термін постачання 21-30 дні (днів) |
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BXT280N02B | BRIDGELUX |
Category: Multi channel transistorsDescription: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8 Polarisation: unipolar Case: SOP8 Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET x2 Gate charge: 5.5nC On-state resistance: 38mΩ Power dissipation: 1.6W Drain current: 4A Gate-source voltage: ±12V Drain-source voltage: 20V Pulsed drain current: 24A Kind of package: reel; tape кількість в упаковці: 1 шт |
на замовлення 509 шт: термін постачання 14-21 дні (днів) |
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| BXT280N03M | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.6A Case: SOT23 Gate-source voltage: ±12V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||||
|
BXT2N7002BK | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Pulsed drain current: 1.8A Power dissipation: 0.35W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.8nC |
на замовлення 8880 шт: термін постачання 21-30 дні (днів) |
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BXT2N7002BK | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.36A Pulsed drain current: 1.8A Power dissipation: 0.35W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 3.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 1.8nC кількість в упаковці: 1 шт |
на замовлення 8880 шт: термін постачання 14-21 дні (днів) |
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| BXT2N7002T | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Mounting: SMD Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| BXRV-TR-2765S-20A0-A-23 |
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Виробник: BRIDGELUX
Category: White power LEDs - COB
Description: Power LED; white warm/cold white; COB,bicolour; 17.6/18.2W
Type of diode: power LED
LED colour: white warm/cold white
LED version: bicolour; COB
Colour temperature: 2700-6500K
Luminosity: 1723lm; 2001lm
Min. colour rendering index: 95
Front: flat
LED current: 500mA
Dimensions: 18.8x18.8x1.65mm
Operating voltage: 33.2...37.4/34.1...38.5V DC
Manufacturer series: Vesta Tunable White
Storage temperature: 40...105°C
Power: 17.6/18.2W
кількість в упаковці: 1 шт
Category: White power LEDs - COB
Description: Power LED; white warm/cold white; COB,bicolour; 17.6/18.2W
Type of diode: power LED
LED colour: white warm/cold white
LED version: bicolour; COB
Colour temperature: 2700-6500K
Luminosity: 1723lm; 2001lm
Min. colour rendering index: 95
Front: flat
LED current: 500mA
Dimensions: 18.8x18.8x1.65mm
Operating voltage: 33.2...37.4/34.1...38.5V DC
Manufacturer series: Vesta Tunable White
Storage temperature: 40...105°C
Power: 17.6/18.2W
кількість в упаковці: 1 шт
на замовлення 5 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 896.44 грн |
| 5+ | 756.37 грн |
| 10+ | 603.30 грн |
| 25+ | 584.21 грн |
| BXRV-TR-2765S-20A0-A-23-S2 |
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Виробник: Bridgelux
Description: LED COB VESTA WHITE ROUND 6500K
Packaging: Tray
Features: With Holder
Color: White, Warm / White, Cool
Size / Dimension: 36.20mm Dia
Type: Chip On Board (COB)
Configuration: Round
Voltage - Forward (Vf) (Typ): 35.2V Warm White, 36.3V Cool White
Height: 3.80mm
Current - Test: 500mA
Viewing Angle: 130°
Lens Type: Flat
Current - Max: 700mA
Lumens/Watt @ Current - Test: 98 lm/W Warm White, 110 lm/W Cool White
CCT (K): 2700K 3-Step MacAdam Ellipse, 6500K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 95
Light Emitting Surface (LES): 14.30mm Dia
Temperature - Test: 25°C
Luminous Flux @ Current/Temperature: 1550lm Warm White, 1801lm Cool White
Part Status: Active
Description: LED COB VESTA WHITE ROUND 6500K
Packaging: Tray
Features: With Holder
Color: White, Warm / White, Cool
Size / Dimension: 36.20mm Dia
Type: Chip On Board (COB)
Configuration: Round
Voltage - Forward (Vf) (Typ): 35.2V Warm White, 36.3V Cool White
Height: 3.80mm
Current - Test: 500mA
Viewing Angle: 130°
Lens Type: Flat
Current - Max: 700mA
Lumens/Watt @ Current - Test: 98 lm/W Warm White, 110 lm/W Cool White
CCT (K): 2700K 3-Step MacAdam Ellipse, 6500K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 95
Light Emitting Surface (LES): 14.30mm Dia
Temperature - Test: 25°C
Luminous Flux @ Current/Temperature: 1550lm Warm White, 1801lm Cool White
Part Status: Active
на замовлення 33 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1410.14 грн |
| 10+ | 1070.66 грн |
| BXRV-TR-2765S-40A0-A-23 |
Виробник: Bridgelux
Description: TW18 TUNABLE WHITE ARRAY (DP)
Packaging: Tray
Color: White, Warm / White, Cool
Size / Dimension: 24.00mm L x 24.00mm W
Type: Chip On Board (COB)
Configuration: Square
Voltage - Forward (Vf) (Typ): 35.3V
Height: 1.65mm
Current - Test: 900mA
Viewing Angle: 130°
Lens Type: Flat
Current - Max: 1.4A
Lumens/Watt @ Current - Test: 118 lm/W
CCT (K): 1800K, 4000K
CRI (Color Rendering Index): 90
Light Emitting Surface (LES): 19.70mm Dia
Temperature - Test: 25°C
Luminous Flux @ Current/Temperature: 3741lm (Typ)
Description: TW18 TUNABLE WHITE ARRAY (DP)
Packaging: Tray
Color: White, Warm / White, Cool
Size / Dimension: 24.00mm L x 24.00mm W
Type: Chip On Board (COB)
Configuration: Square
Voltage - Forward (Vf) (Typ): 35.3V
Height: 1.65mm
Current - Test: 900mA
Viewing Angle: 130°
Lens Type: Flat
Current - Max: 1.4A
Lumens/Watt @ Current - Test: 118 lm/W
CCT (K): 1800K, 4000K
CRI (Color Rendering Index): 90
Light Emitting Surface (LES): 19.70mm Dia
Temperature - Test: 25°C
Luminous Flux @ Current/Temperature: 3741lm (Typ)
товару немає в наявності
В кошику
од. на суму грн.
| BXS028N10P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXS030N08P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 220A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 220A
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 220A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 220A
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXS030N10P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; TO220
Type of transistor: N-MOSFET
Case: TO220
Mounting: THT
Polarisation: unipolar
Gate-source voltage: ±20V
Drain current: 210A
Drain-source voltage: 100V
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 210A; TO220
Type of transistor: N-MOSFET
Case: TO220
Mounting: THT
Polarisation: unipolar
Gate-source voltage: ±20V
Drain current: 210A
Drain-source voltage: 100V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXS035N10BP |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXS035N10C |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 165A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 165A
Case: PDFN56
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 165A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 165A
Case: PDFN56
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXS040N08P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 170A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 170A
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 170A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 170A
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXS040N10P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXS045N10C |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 600A; 167W; PDFN56
Case: PDFN56
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 75nC
On-state resistance: 7.5mΩ
Power dissipation: 167W
Drain current: 117A
Drain-source voltage: 100V
Pulsed drain current: 600A
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 117A; Idm: 600A; 167W; PDFN56
Case: PDFN56
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 75nC
On-state resistance: 7.5mΩ
Power dissipation: 167W
Drain current: 117A
Drain-source voltage: 100V
Pulsed drain current: 600A
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| BXS049N08P |
Виробник: BRIDGELUX
BXS049N08P THT N channel transistors
BXS049N08P THT N channel transistors
на замовлення 865 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 115.04 грн |
| 38+ | 29.97 грн |
| 104+ | 28.35 грн |
| BXS050N10BP |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXS050N10D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXS055N08P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXS075N10C |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; Idm: 600A; 78W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Pulsed drain current: 600A
Power dissipation: 78W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; Idm: 600A; 78W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Pulsed drain current: 600A
Power dissipation: 78W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 7.5mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXS080N10C |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Case: PDFN56
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 79A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 79A
Case: PDFN56
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXS105N10B |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8
Case: SOP8
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 71nC
On-state resistance: 10.5mΩ
Power dissipation: 3.5W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 56A
Drain-source voltage: 100V
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 14A; Idm: 56A; 3.5W; SOP8
Case: SOP8
Polarisation: unipolar
Kind of channel: enhancement
Gate charge: 71nC
On-state resistance: 10.5mΩ
Power dissipation: 3.5W
Drain current: 14A
Gate-source voltage: ±20V
Pulsed drain current: 56A
Drain-source voltage: 100V
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel
товару немає в наявності
В кошику
од. на суму грн.
| BXS1150N10M |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23-3
Polarisation: unipolar
Gate charge: 16.3nC
On-state resistance: 0.15Ω
Power dissipation: 2.5W
Drain current: 2.6A
Pulsed drain current: 15.6A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23-3
Polarisation: unipolar
Gate charge: 16.3nC
On-state resistance: 0.15Ω
Power dissipation: 2.5W
Drain current: 2.6A
Pulsed drain current: 15.6A
Gate-source voltage: ±20V
Drain-source voltage: 100V
на замовлення 10749 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 29.13 грн |
| 29+ | 13.76 грн |
| 42+ | 9.67 грн |
| 100+ | 6.91 грн |
| 250+ | 3.46 грн |
| 500+ | 2.62 грн |
| 1000+ | 2.31 грн |
| 3000+ | 2.08 грн |
| BXS1150N10M |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23-3
Polarisation: unipolar
Gate charge: 16.3nC
On-state resistance: 0.15Ω
Power dissipation: 2.5W
Drain current: 2.6A
Pulsed drain current: 15.6A
Gate-source voltage: ±20V
Drain-source voltage: 100V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15.6A; 2.5W
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23-3
Polarisation: unipolar
Gate charge: 16.3nC
On-state resistance: 0.15Ω
Power dissipation: 2.5W
Drain current: 2.6A
Pulsed drain current: 15.6A
Gate-source voltage: ±20V
Drain-source voltage: 100V
кількість в упаковці: 1 шт
на замовлення 10749 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 34.95 грн |
| 18+ | 17.15 грн |
| 25+ | 11.61 грн |
| 100+ | 8.30 грн |
| 250+ | 4.15 грн |
| 500+ | 3.14 грн |
| 1000+ | 2.77 грн |
| BXS130N10C |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 208A
Power dissipation: 57W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 52A; Idm: 208A; 57W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 52A
Pulsed drain current: 208A
Power dissipation: 57W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXS160N10C |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Mounting: SMD
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Mounting: SMD
Drain-source voltage: 100V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
товару немає в наявності
В кошику
од. на суму грн.
| BXS230N10B |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
на замовлення 1611 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 16+ | 28.27 грн |
| 19+ | 21.64 грн |
| 29+ | 14.00 грн |
| 100+ | 10.10 грн |
| 250+ | 8.91 грн |
| 1000+ | 7.64 грн |
| BXS230N10B |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1611 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 33.92 грн |
| 12+ | 26.96 грн |
| 25+ | 16.80 грн |
| 100+ | 12.12 грн |
| 250+ | 10.69 грн |
| 1000+ | 9.16 грн |
| 2000+ | 9.07 грн |
| BXT020N03C |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 130A; Idm: 520A; 120W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 120W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 130A; Idm: 520A; 120W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 120W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 2mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT030N03C |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 59A; Idm: 360A; 44.6W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 59A
Pulsed drain current: 360A
Power dissipation: 44.6W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 59A; Idm: 360A; 44.6W; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 59A
Pulsed drain current: 360A
Power dissipation: 44.6W
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT040N03C |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; PDFN56
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: PDFN56
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT060N03B |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 80A; 4.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 4.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 80A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 20A; Idm: 80A; 4.5W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 20A
Power dissipation: 4.5W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 80A
товару немає в наявності
В кошику
од. на суму грн.
| BXT070N06D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 108W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 320A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 108W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Power dissipation: 108W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 320A
товару немає в наявності
В кошику
од. на суму грн.
| BXT080N03E |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 120A; 12W; PDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 12W
Case: PDFN8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 30A; Idm: 120A; 12W; PDFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 12W
Case: PDFN8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 13.2nC
Kind of package: reel
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT090N06B |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 4.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; Idm: 68A; 4.8W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Pulsed drain current: 68A
Power dissipation: 4.8W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 99nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT1000N06M |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-3
Polarisation: unipolar
Gate charge: 5.2nC
On-state resistance: 0.11Ω
Power dissipation: 1.5W
Drain current: 2A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-3
Polarisation: unipolar
Gate charge: 5.2nC
On-state resistance: 0.11Ω
Power dissipation: 1.5W
Drain current: 2A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
на замовлення 1298 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 28+ | 15.42 грн |
| 36+ | 11.22 грн |
| 100+ | 7.45 грн |
| 500+ | 5.22 грн |
| 1000+ | 3.13 грн |
| BXT1000N06M |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-3
Polarisation: unipolar
Gate charge: 5.2nC
On-state resistance: 0.11Ω
Power dissipation: 1.5W
Drain current: 2A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 12A; 1.5W; SOT23-3
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOT23-3
Polarisation: unipolar
Gate charge: 5.2nC
On-state resistance: 0.11Ω
Power dissipation: 1.5W
Drain current: 2A
Pulsed drain current: 12A
Gate-source voltage: ±20V
Drain-source voltage: 60V
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1298 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 18.50 грн |
| 22+ | 13.98 грн |
| 100+ | 8.94 грн |
| 500+ | 6.26 грн |
| 1000+ | 3.76 грн |
| 3000+ | 3.38 грн |
| 6000+ | 2.99 грн |
| BXT1000N06N |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: 60V
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT1100P02M |
Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 1.25W
Pulsed drain current: -10A
Kind of package: reel
On-state resistance: 0.11Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3A; Idm: -10A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3A
Case: SOT23
Gate-source voltage: ±10V
Mounting: SMD
Kind of channel: enhancement
Power dissipation: 1.25W
Pulsed drain current: -10A
Kind of package: reel
On-state resistance: 0.11Ω
товару немає в наявності
В кошику
од. на суму грн.
| BXT110P03E |
Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; PDFN33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Case: PDFN33
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -35A; PDFN33
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -35A
Case: PDFN33
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT1150N10D |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO252
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 78W
Drain current: 12.8A
Gate-source voltage: ±20V
Pulsed drain current: 64A
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO252
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 78W
Drain current: 12.8A
Gate-source voltage: ±20V
Pulsed drain current: 64A
Drain-source voltage: 100V
на замовлення 4402 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 17.99 грн |
| 28+ | 14.32 грн |
| 35+ | 11.46 грн |
| 100+ | 10.26 грн |
| 250+ | 8.67 грн |
| 500+ | 7.80 грн |
| 1000+ | 6.92 грн |
| 2500+ | 6.13 грн |
| BXT1150N10D |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO252
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 78W
Drain current: 12.8A
Gate-source voltage: ±20V
Pulsed drain current: 64A
Drain-source voltage: 100V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 12.8A; Idm: 64A; 78W; TO252
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: TO252
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 78W
Drain current: 12.8A
Gate-source voltage: ±20V
Pulsed drain current: 64A
Drain-source voltage: 100V
кількість в упаковці: 1 шт
на замовлення 4402 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 15+ | 21.59 грн |
| 17+ | 17.84 грн |
| 25+ | 13.75 грн |
| 100+ | 12.31 грн |
| 250+ | 10.41 грн |
| 500+ | 9.36 грн |
| 1000+ | 8.30 грн |
| BXT1150N10J |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT89-3
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 2W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 32A
Drain-source voltage: 100V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT89-3
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 2W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 32A
Drain-source voltage: 100V
на замовлення 7685 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 39+ | 11.14 грн |
| 46+ | 8.67 грн |
| 58+ | 6.97 грн |
| 100+ | 6.22 грн |
| 250+ | 5.19 грн |
| 500+ | 4.65 грн |
| 1000+ | 4.35 грн |
| 3000+ | 4.11 грн |
| 4000+ | 3.75 грн |
| BXT1150N10J |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT89-3
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 2W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 32A
Drain-source voltage: 100V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.6A; Idm: 32A; 2W; SOT89-3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOT89-3
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 21nC
On-state resistance: 135mΩ
Power dissipation: 2W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 32A
Drain-source voltage: 100V
кількість в упаковці: 1 шт
на замовлення 7685 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 24+ | 13.36 грн |
| 28+ | 10.81 грн |
| 35+ | 8.36 грн |
| 100+ | 7.46 грн |
| 250+ | 6.23 грн |
| 500+ | 5.58 грн |
| 1000+ | 5.22 грн |
| BXT1700P06M |
![]() |
Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -16A
Power dissipation: 1.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -16A
Power dissipation: 1.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2805 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 13.71 грн |
| 36+ | 11.06 грн |
| 45+ | 8.91 грн |
| 100+ | 7.88 грн |
| 250+ | 6.60 грн |
| 500+ | 5.97 грн |
| 1000+ | 5.25 грн |
| BXT1700P06M |
![]() |
Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -16A
Power dissipation: 1.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -16A; 1.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -2.8A
Pulsed drain current: -16A
Power dissipation: 1.5W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 2805 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 16.45 грн |
| 22+ | 13.78 грн |
| 27+ | 10.69 грн |
| 100+ | 9.45 грн |
| 250+ | 7.92 грн |
| 500+ | 7.16 грн |
| 1000+ | 6.30 грн |
| BXT170N06D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 94W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 200A; 94W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 94W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 49nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
товару немає в наявності
В кошику
од. на суму грн.
| BXT210N02M |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 21mΩ
Power dissipation: 1.6W
Drain current: 6.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 27.2A
Case: SOT23
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 21mΩ
Power dissipation: 1.6W
Drain current: 6.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 27.2A
Case: SOT23
на замовлення 11934 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 21+ | 20.56 грн |
| 33+ | 12.33 грн |
| 65+ | 6.17 грн |
| 108+ | 3.71 грн |
| 250+ | 2.47 грн |
| 1000+ | 1.98 грн |
| BXT210N02M |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 21mΩ
Power dissipation: 1.6W
Drain current: 6.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 27.2A
Case: SOT23
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.8A; Idm: 27.2A; 1.6W; SOT23
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel
Mounting: SMD
Polarisation: unipolar
Gate charge: 12.1nC
On-state resistance: 21mΩ
Power dissipation: 1.6W
Drain current: 6.8A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 27.2A
Case: SOT23
кількість в упаковці: 1 шт
на замовлення 11934 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 24.67 грн |
| 20+ | 15.37 грн |
| 39+ | 7.41 грн |
| 100+ | 4.45 грн |
| 250+ | 2.96 грн |
| 1000+ | 2.38 грн |
| BXT230P03B |
![]() |
Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -40A
Power dissipation: 3.9W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -40A
Power dissipation: 3.9W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 1984 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 22.27 грн |
| 24+ | 16.71 грн |
| 28+ | 14.32 грн |
| 100+ | 11.38 грн |
| 250+ | 10.18 грн |
| 500+ | 8.51 грн |
| 1000+ | 7.72 грн |
| BXT230P03B |
![]() |
Виробник: BRIDGELUX
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -40A
Power dissipation: 3.9W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -40A; 3.9W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -40A
Power dissipation: 3.9W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 1984 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 26.73 грн |
| 15+ | 20.82 грн |
| 25+ | 17.18 грн |
| 100+ | 13.65 грн |
| 250+ | 12.22 грн |
| 500+ | 10.21 грн |
| 1000+ | 9.26 грн |
| BXT250N03B |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT250N03M |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT270N02M |
Виробник: BRIDGELUX
BXT270N02M SMD N channel transistors
BXT270N02M SMD N channel transistors
на замовлення 2865 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 10+ | 30.96 грн |
| 572+ | 1.97 грн |
| 1572+ | 1.86 грн |
| BXT2800N10D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT2800N10M |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; Idm: 8.8A; 2.8W; SOT23-3
Power dissipation: 2.8W
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23-3
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 0.31Ω
Drain current: 1.4A
Pulsed drain current: 8.8A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; Idm: 8.8A; 2.8W; SOT23-3
Power dissipation: 2.8W
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23-3
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 0.31Ω
Drain current: 1.4A
Pulsed drain current: 8.8A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
на замовлення 4069 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 56+ | 7.71 грн |
| 79+ | 5.09 грн |
| 100+ | 4.01 грн |
| 111+ | 3.60 грн |
| 250+ | 3.02 грн |
| 450+ | 2.08 грн |
| 1236+ | 1.96 грн |
| BXT2800N10M |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; Idm: 8.8A; 2.8W; SOT23-3
Power dissipation: 2.8W
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23-3
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 0.31Ω
Drain current: 1.4A
Pulsed drain current: 8.8A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.4A; Idm: 8.8A; 2.8W; SOT23-3
Power dissipation: 2.8W
Mounting: SMD
Type of transistor: N-MOSFET
Case: SOT23-3
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 12nC
On-state resistance: 0.31Ω
Drain current: 1.4A
Pulsed drain current: 8.8A
Gate-source voltage: ±20V
Drain-source voltage: 100V
Kind of channel: enhancement
кількість в упаковці: 1 шт
на замовлення 4069 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 34+ | 9.25 грн |
| 47+ | 6.34 грн |
| 60+ | 4.81 грн |
| 100+ | 4.31 грн |
| 250+ | 3.63 грн |
| 450+ | 2.49 грн |
| 1236+ | 2.36 грн |
| BXT280N02B |
![]() |
Виробник: BRIDGELUX
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Polarisation: unipolar
Case: SOP8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Gate charge: 5.5nC
On-state resistance: 38mΩ
Power dissipation: 1.6W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 24A
Kind of package: reel; tape
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Polarisation: unipolar
Case: SOP8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Gate charge: 5.5nC
On-state resistance: 38mΩ
Power dissipation: 1.6W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 24A
Kind of package: reel; tape
на замовлення 509 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 32+ | 13.71 грн |
| 40+ | 10.18 грн |
| 46+ | 8.72 грн |
| 100+ | 6.95 грн |
| 250+ | 6.22 грн |
| 500+ | 5.20 грн |
| BXT280N02B |
![]() |
Виробник: BRIDGELUX
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Polarisation: unipolar
Case: SOP8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Gate charge: 5.5nC
On-state resistance: 38mΩ
Power dissipation: 1.6W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 24A
Kind of package: reel; tape
кількість в упаковці: 1 шт
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 4A; Idm: 24A; 1.6W; SOP8
Polarisation: unipolar
Case: SOP8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET x2
Gate charge: 5.5nC
On-state resistance: 38mΩ
Power dissipation: 1.6W
Drain current: 4A
Gate-source voltage: ±12V
Drain-source voltage: 20V
Pulsed drain current: 24A
Kind of package: reel; tape
кількість в упаковці: 1 шт
на замовлення 509 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 19+ | 16.45 грн |
| 24+ | 12.69 грн |
| 28+ | 10.46 грн |
| 100+ | 8.34 грн |
| 250+ | 7.46 грн |
| 500+ | 6.24 грн |
| 1000+ | 5.62 грн |
| BXT280N03M |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Case: SOT23
Gate-source voltage: ±12V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXT2N7002BK |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.8nC
на замовлення 8880 шт:
термін постачання 21-30 дні (днів)| Кількість | Ціна |
|---|---|
| 62+ | 6.96 грн |
| 129+ | 3.10 грн |
| 187+ | 2.13 грн |
| 231+ | 1.73 грн |
| 307+ | 1.30 грн |
| 500+ | 1.16 грн |
| 1000+ | 1.03 грн |
| 1051+ | 0.89 грн |
| 2889+ | 0.84 грн |
| BXT2N7002BK |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.8nC
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; Idm: 1.8A; 0.35W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Pulsed drain current: 1.8A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 3.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1.8nC
кількість в упаковці: 1 шт
на замовлення 8880 шт:
термін постачання 14-21 дні (днів)| Кількість | Ціна |
|---|---|
| 37+ | 8.36 грн |
| 77+ | 3.87 грн |
| 112+ | 2.56 грн |
| 139+ | 2.07 грн |
| 250+ | 1.56 грн |
| 500+ | 1.39 грн |
| 1000+ | 1.23 грн |
| BXT2N7002T |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.












