| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| BXIB-L0305A-40H1200-A-13 | Bridgelux |
Description: LED MOD IB WHT LNR STRIP 4000K Packaging: Tray Color: White, Neutral Size / Dimension: 304.80mm L x 25.00mm W Type: LED Module Configuration: Linear Light Strip, Plug and Play Voltage - Forward (Vf) (Typ): 22.9V Height: 19.00mm Current - Test: 350mA Viewing Angle: 240° Lens Type: Flat Current - Max: 500mA Lumens/Watt @ Current - Test: 114 lm/W CCT (K): 4000K 3-Step MacAdam Ellipse CRI (Color Rendering Index): 95 Light Emitting Surface (LES): 259.60mm L x 25.00mm W Temperature - Test: 40°C Luminous Flux @ Current/Temperature: 915lm (Typ) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BXIB-L0305A-50E1200-A-13 | Bridgelux |
Description: LED MOD IB WHT LNR STRP 5000K Packaging: Tray Color: White, Cool Size / Dimension: 304.80mm L x 25.00mm W Type: LED Module Configuration: Linear Light Strip, Plug and Play Voltage - Forward (Vf) (Typ): 22.9V Height: 19.00mm Current - Test: 350mA Viewing Angle: 240° Lens Type: Flat Current - Max: 500mA Lumens/Watt @ Current - Test: 145 lm/W CCT (K): 5000K 3-Step MacAdam Ellipse CRI (Color Rendering Index): 80 Light Emitting Surface (LES): 259.60mm L x 25.00mm W Temperature - Test: 40°C Luminous Flux @ Current/Temperature: 1160lm (Typ) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BXIB-L0305W-30G1200-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC, 305MM, Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BXIB-L0305W-30G120M-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC & MAGNE Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BXIB-L0305W-40G1200-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC, 305MM, Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BXIB-L0305W-40G120M-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC & MAGNE Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BXIB-L0305W-50E1200-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC, 305MM, Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BXIB-L0305W-50E120M-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC & MAGNE Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BXIB-L0508A-30G2000-A-13 | Bridgelux |
Description: LED MOD IB WHT LNR STRP 3000K Packaging: Tray Color: White, Warm Size / Dimension: 508.00mm L x 25.00mm W Type: LED Module Configuration: Linear Light Strip, Plug and Play Voltage - Forward (Vf) (Typ): 28.6V Height: 19.00mm Current - Test: 500mA Viewing Angle: 240° Lens Type: Flat Current - Max: 700mA Lumens/Watt @ Current - Test: 117 lm/W CCT (K): 3000K 3-Step MacAdam Ellipse CRI (Color Rendering Index): 90 Light Emitting Surface (LES): 463.00mm L x 25.00mm W Temperature - Test: 40°C Luminous Flux @ Current/Temperature: 1680lm (Typ) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BXIB-L0508A-40H2000-A-13 | Bridgelux |
Description: LED MOD IB WHT LNR STRIP 4000K Packaging: Tray Color: White, Neutral Size / Dimension: 508.00mm L x 25.00mm W Type: LED Module Configuration: Linear Light Strip, Plug and Play Voltage - Forward (Vf) (Typ): 28.6V Height: 19.00mm Current - Test: 500mA Viewing Angle: 240° Lens Type: Flat Current - Max: 700mA Lumens/Watt @ Current - Test: 113 lm/W CCT (K): 4000K 3-Step MacAdam Ellipse CRI (Color Rendering Index): 95 Light Emitting Surface (LES): 463.00mm L x 25.00mm W Temperature - Test: 40°C Luminous Flux @ Current/Temperature: 1620lm (Typ) |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BXIB-L0554W-50E2500-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC, 554MM, Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BXIB-L0554W-50E250M-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC & MAGNE Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BXIB-L1092A-27G3000-A-13 | Bridgelux |
Description: LED MOD IB WM WHT LNR STRP 2700K Packaging: Tray Color: White, Warm Size / Dimension: 1090.00mm L x 25.00mm W Type: LED Module Configuration: Linear Light Strip, Plug and Play Voltage - Forward (Vf) (Typ): 42.9V Height: 19.00mm Current - Test: 500mA Viewing Angle: 240° Lens Type: Flat Current - Max: 700mA Lumens/Watt @ Current - Test: 114 lm/W CCT (K): 2700K 3-Step MacAdam Ellipse CRI (Color Rendering Index): 90 Light Emitting Surface (LES): 1041.00mm L x 25.00mm W Temperature - Test: 40°C Luminous Flux @ Current/Temperature: 2450lm (Typ) Part Status: Obsolete |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BXIB-L1092W-50E3000-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC, 1092MM Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BXIB-L1092W-50E300M-C-13 | Bridgelux |
Description: IB SERIES W/ WHITE OPTIC & MAGNE Packaging: Tray |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BXIR-85090BA-1300 | Bridgelux |
Description: EMITTER IR 850NM SMD |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
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BXIR-85090BA-1300 | Bridgelux |
Description: EMITTER IR 850NM SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BXIR-85120AA-0900 | Bridgelux |
Description: IR 3535 SMD, 0900MW MIN, 850NM, |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BXP10N60F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Power dissipation: 48W Case: TO220F On-state resistance: 0.68Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A |
на замовлення 459 шт: термін постачання 14-30 дні (днів) |
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BXP10N65CF | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Power dissipation: 48W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A Gate charge: 32nC |
на замовлення 576 шт: термін постачання 14-30 дні (днів) |
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| BXP10N80F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 44W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 40A Gate charge: 71nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BXP10N90F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BXP12N65F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.7A Pulsed drain current: 48A Power dissipation: 51W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Gate charge: 39nC Kind of package: tube Kind of channel: enhancement |
на замовлення 181 шт: термін постачання 14-30 дні (днів) |
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BXP13N50F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8.1A Pulsed drain current: 52A Power dissipation: 51W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
на замовлення 939 шт: термін постачання 14-30 дні (днів) |
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BXP13N50P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Pulsed drain current: 52A Power dissipation: 158W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.46Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BXP16N65F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.1A Power dissipation: 43W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.56Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 64A Gate charge: 35nC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
| BXP18N20D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252 Case: TO252 Mounting: SMD On-state resistance: 0.18Ω Drain current: 18A Gate-source voltage: ±30V Power dissipation: 90W Pulsed drain current: 72A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tube Polarisation: unipolar Gate charge: 23nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BXP18N20F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F Case: TO220F Mounting: THT On-state resistance: 0.18Ω Drain current: 11A Gate-source voltage: ±30V Power dissipation: 55W Pulsed drain current: 72A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 23nC |
товару немає в наявності |
Мінімальне замовлення: 1000 шт В кошику од. на суму грн. | ||||||||||||||||
| BXP18N20H | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V Mounting: THT Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BXP18N20P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220 Case: TO220 Mounting: THT On-state resistance: 0.18Ω Drain current: 18A Gate-source voltage: ±30V Power dissipation: 95W Pulsed drain current: 72A Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: tube Polarisation: unipolar Gate charge: 23nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BXP18N50F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 72A Power dissipation: 42.8W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
на замовлення 679 шт: термін постачання 14-30 дні (днів) |
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| BXP20N50F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 20A Pulsed drain current: 80A Power dissipation: 39W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Gate charge: 51nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BXP20N50H | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BXP2N20L | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 185V; 1.2A; Idm: 8A; 2W; SOT23-3 Power dissipation: 2W Kind of package: reel; tape Case: SOT23-3 Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 4.5nC On-state resistance: 1.8Ω Drain current: 1.2A Pulsed drain current: 8A Gate-source voltage: ±30V Drain-source voltage: 185V |
на замовлення 1995 шт: термін постачання 14-30 дні (днів) |
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BXP2N65D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 1.21A Power dissipation: 44W Case: TO252 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 8A Gate charge: 8.5nC |
на замовлення 1199 шт: термін постачання 14-30 дні (днів) |
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| BXP2N65F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Case: TO220F Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
| BXP2N65N | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2A Power dissipation: 3W Case: SOT223-3L Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: SMD Kind of package: reel Kind of channel: enhancement Pulsed drain current: 8A Gate charge: 8.5nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BXP2N65U | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 1.21A Power dissipation: 44W Case: TO251 Gate-source voltage: ±30V On-state resistance: 5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 8A Gate charge: 8.5nC |
на замовлення 1425 шт: термін постачання 14-30 дні (днів) |
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BXP3N1KF | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F Case: TO220F Pulsed drain current: 12A Power dissipation: 25W Gate charge: 18nC Polarisation: unipolar Drain current: 1.6A Kind of channel: enhancement Drain-source voltage: 1kV Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: tube On-state resistance: 6Ω Mounting: THT |
на замовлення 783 шт: термін постачання 14-30 дні (днів) |
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BXP4N60D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.5A Power dissipation: 77W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 16A Gate charge: 13.2nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BXP4N65D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 16A Power dissipation: 77W Gate charge: 13nC |
на замовлення 11878 шт: термін постачання 14-30 дні (днів) |
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BXP4N65F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Case: TO220F Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 16A Power dissipation: 37W Gate charge: 13nC |
на замовлення 2256 шт: термін постачання 14-30 дні (днів) |
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BXP4N65U | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 2.5A Case: TO251 Gate-source voltage: ±30V On-state resistance: 2.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 16A Power dissipation: 77W Gate charge: 13nC |
на замовлення 1565 шт: термін постачання 14-30 дні (днів) |
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BXP4N80D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.2A Pulsed drain current: 16A Power dissipation: 130W Case: TO252 Gate-source voltage: ±30V On-state resistance: 4Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BXP4N80F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Case: TO220F Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BXP5N20D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5A; Idm: 20A; 41W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5A Pulsed drain current: 20A Power dissipation: 41W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.65Ω Mounting: SMD Kind of package: reel; tube Kind of channel: enhancement Gate charge: 9nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BXP5N20P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BXP6N60D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 24A; 85W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.5A Pulsed drain current: 24A Power dissipation: 85W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.7Ω Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
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BXP7N60D | BRIDGELUX |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 145W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: SMD Kind of package: reel; tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 21nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BXP7N60F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 45W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 45W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 21nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
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BXP7N60P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 166W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 166W Case: TO220 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 21nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BXP7N60U | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 7A Power dissipation: 145W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 21nC |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||||
|
BXP7N65CF | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 46W Case: TO220F Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
на замовлення 356 шт: термін постачання 14-30 дні (днів) |
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BXP7N65D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 145W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
на замовлення 2400 шт: термін постачання 14-30 дні (днів) |
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BXP7N65P | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 167W Case: TO220 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
на замовлення 673 шт: термін постачання 14-30 дні (днів) |
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BXP7N65U | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.9A Pulsed drain current: 28A Power dissipation: 145W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.4Ω Mounting: THT Gate charge: 21nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BXP7N80F | BRIDGELUX |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 28A; 43.9W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 4.2A Power dissipation: 43.9W Case: TO220F Gate-source voltage: ±30V On-state resistance: 2Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 28A Gate charge: 40nC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BXP8N50D | BRIDGELUX |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 32A; 100W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.3A Pulsed drain current: 32A Power dissipation: 100W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
|
BXP8N50P | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 105W; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 8A Pulsed drain current: 32A Power dissipation: 105W Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.9Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||||
| BXP8N90F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 8A; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 8A Case: TO220F Mounting: THT Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| BXIB-L0305A-40H1200-A-13 |
Виробник: Bridgelux
Description: LED MOD IB WHT LNR STRIP 4000K
Packaging: Tray
Color: White, Neutral
Size / Dimension: 304.80mm L x 25.00mm W
Type: LED Module
Configuration: Linear Light Strip, Plug and Play
Voltage - Forward (Vf) (Typ): 22.9V
Height: 19.00mm
Current - Test: 350mA
Viewing Angle: 240°
Lens Type: Flat
Current - Max: 500mA
Lumens/Watt @ Current - Test: 114 lm/W
CCT (K): 4000K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 95
Light Emitting Surface (LES): 259.60mm L x 25.00mm W
Temperature - Test: 40°C
Luminous Flux @ Current/Temperature: 915lm (Typ)
Part Status: Obsolete
Description: LED MOD IB WHT LNR STRIP 4000K
Packaging: Tray
Color: White, Neutral
Size / Dimension: 304.80mm L x 25.00mm W
Type: LED Module
Configuration: Linear Light Strip, Plug and Play
Voltage - Forward (Vf) (Typ): 22.9V
Height: 19.00mm
Current - Test: 350mA
Viewing Angle: 240°
Lens Type: Flat
Current - Max: 500mA
Lumens/Watt @ Current - Test: 114 lm/W
CCT (K): 4000K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 95
Light Emitting Surface (LES): 259.60mm L x 25.00mm W
Temperature - Test: 40°C
Luminous Flux @ Current/Temperature: 915lm (Typ)
Part Status: Obsolete
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В кошику
од. на суму грн.
| BXIB-L0305A-50E1200-A-13 |
Виробник: Bridgelux
Description: LED MOD IB WHT LNR STRP 5000K
Packaging: Tray
Color: White, Cool
Size / Dimension: 304.80mm L x 25.00mm W
Type: LED Module
Configuration: Linear Light Strip, Plug and Play
Voltage - Forward (Vf) (Typ): 22.9V
Height: 19.00mm
Current - Test: 350mA
Viewing Angle: 240°
Lens Type: Flat
Current - Max: 500mA
Lumens/Watt @ Current - Test: 145 lm/W
CCT (K): 5000K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 80
Light Emitting Surface (LES): 259.60mm L x 25.00mm W
Temperature - Test: 40°C
Luminous Flux @ Current/Temperature: 1160lm (Typ)
Description: LED MOD IB WHT LNR STRP 5000K
Packaging: Tray
Color: White, Cool
Size / Dimension: 304.80mm L x 25.00mm W
Type: LED Module
Configuration: Linear Light Strip, Plug and Play
Voltage - Forward (Vf) (Typ): 22.9V
Height: 19.00mm
Current - Test: 350mA
Viewing Angle: 240°
Lens Type: Flat
Current - Max: 500mA
Lumens/Watt @ Current - Test: 145 lm/W
CCT (K): 5000K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 80
Light Emitting Surface (LES): 259.60mm L x 25.00mm W
Temperature - Test: 40°C
Luminous Flux @ Current/Temperature: 1160lm (Typ)
товару немає в наявності
В кошику
од. на суму грн.
| BXIB-L0508A-30G2000-A-13 |
Виробник: Bridgelux
Description: LED MOD IB WHT LNR STRP 3000K
Packaging: Tray
Color: White, Warm
Size / Dimension: 508.00mm L x 25.00mm W
Type: LED Module
Configuration: Linear Light Strip, Plug and Play
Voltage - Forward (Vf) (Typ): 28.6V
Height: 19.00mm
Current - Test: 500mA
Viewing Angle: 240°
Lens Type: Flat
Current - Max: 700mA
Lumens/Watt @ Current - Test: 117 lm/W
CCT (K): 3000K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 90
Light Emitting Surface (LES): 463.00mm L x 25.00mm W
Temperature - Test: 40°C
Luminous Flux @ Current/Temperature: 1680lm (Typ)
Part Status: Obsolete
Description: LED MOD IB WHT LNR STRP 3000K
Packaging: Tray
Color: White, Warm
Size / Dimension: 508.00mm L x 25.00mm W
Type: LED Module
Configuration: Linear Light Strip, Plug and Play
Voltage - Forward (Vf) (Typ): 28.6V
Height: 19.00mm
Current - Test: 500mA
Viewing Angle: 240°
Lens Type: Flat
Current - Max: 700mA
Lumens/Watt @ Current - Test: 117 lm/W
CCT (K): 3000K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 90
Light Emitting Surface (LES): 463.00mm L x 25.00mm W
Temperature - Test: 40°C
Luminous Flux @ Current/Temperature: 1680lm (Typ)
Part Status: Obsolete
товару немає в наявності
В кошику
од. на суму грн.
| BXIB-L0508A-40H2000-A-13 |
Виробник: Bridgelux
Description: LED MOD IB WHT LNR STRIP 4000K
Packaging: Tray
Color: White, Neutral
Size / Dimension: 508.00mm L x 25.00mm W
Type: LED Module
Configuration: Linear Light Strip, Plug and Play
Voltage - Forward (Vf) (Typ): 28.6V
Height: 19.00mm
Current - Test: 500mA
Viewing Angle: 240°
Lens Type: Flat
Current - Max: 700mA
Lumens/Watt @ Current - Test: 113 lm/W
CCT (K): 4000K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 95
Light Emitting Surface (LES): 463.00mm L x 25.00mm W
Temperature - Test: 40°C
Luminous Flux @ Current/Temperature: 1620lm (Typ)
Description: LED MOD IB WHT LNR STRIP 4000K
Packaging: Tray
Color: White, Neutral
Size / Dimension: 508.00mm L x 25.00mm W
Type: LED Module
Configuration: Linear Light Strip, Plug and Play
Voltage - Forward (Vf) (Typ): 28.6V
Height: 19.00mm
Current - Test: 500mA
Viewing Angle: 240°
Lens Type: Flat
Current - Max: 700mA
Lumens/Watt @ Current - Test: 113 lm/W
CCT (K): 4000K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 95
Light Emitting Surface (LES): 463.00mm L x 25.00mm W
Temperature - Test: 40°C
Luminous Flux @ Current/Temperature: 1620lm (Typ)
товару немає в наявності
В кошику
од. на суму грн.
| BXIB-L1092A-27G3000-A-13 |
Виробник: Bridgelux
Description: LED MOD IB WM WHT LNR STRP 2700K
Packaging: Tray
Color: White, Warm
Size / Dimension: 1090.00mm L x 25.00mm W
Type: LED Module
Configuration: Linear Light Strip, Plug and Play
Voltage - Forward (Vf) (Typ): 42.9V
Height: 19.00mm
Current - Test: 500mA
Viewing Angle: 240°
Lens Type: Flat
Current - Max: 700mA
Lumens/Watt @ Current - Test: 114 lm/W
CCT (K): 2700K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 90
Light Emitting Surface (LES): 1041.00mm L x 25.00mm W
Temperature - Test: 40°C
Luminous Flux @ Current/Temperature: 2450lm (Typ)
Part Status: Obsolete
Description: LED MOD IB WM WHT LNR STRP 2700K
Packaging: Tray
Color: White, Warm
Size / Dimension: 1090.00mm L x 25.00mm W
Type: LED Module
Configuration: Linear Light Strip, Plug and Play
Voltage - Forward (Vf) (Typ): 42.9V
Height: 19.00mm
Current - Test: 500mA
Viewing Angle: 240°
Lens Type: Flat
Current - Max: 700mA
Lumens/Watt @ Current - Test: 114 lm/W
CCT (K): 2700K 3-Step MacAdam Ellipse
CRI (Color Rendering Index): 90
Light Emitting Surface (LES): 1041.00mm L x 25.00mm W
Temperature - Test: 40°C
Luminous Flux @ Current/Temperature: 2450lm (Typ)
Part Status: Obsolete
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В кошику
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| BXIR-85090BA-1300 |
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Виробник: Bridgelux
Description: EMITTER IR 850NM SMD
Description: EMITTER IR 850NM SMD
товару немає в наявності
Мінімальне замовлення: 1000 шт
В кошику
од. на суму грн.
| BXIR-85090BA-1300 |
![]() |
Виробник: Bridgelux
Description: EMITTER IR 850NM SMD
Description: EMITTER IR 850NM SMD
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В кошику
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| BXIR-85120AA-0900 |
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Виробник: Bridgelux
Description: IR 3535 SMD, 0900MW MIN, 850NM,
Description: IR 3535 SMD, 0900MW MIN, 850NM,
товару немає в наявності
В кошику
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| BXP10N60F |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 48W
Case: TO220F
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Power dissipation: 48W
Case: TO220F
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
на замовлення 459 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 58.17 грн |
| 10+ | 47.20 грн |
| 25+ | 42.38 грн |
| 100+ | 37.56 грн |
| 250+ | 33.74 грн |
| BXP10N65CF |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 32nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 5A; Idm: 40A; 48W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 48W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 32nC
на замовлення 576 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 51.01 грн |
| 12+ | 36.15 грн |
| 25+ | 31.33 грн |
| 100+ | 28.50 грн |
| BXP10N80F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 44W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 71nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 44W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 44W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 71nC
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| BXP10N90F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Mounting: THT
Kind of channel: enhancement
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В кошику
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| BXP12N65F |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Pulsed drain current: 48A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; Idm: 48A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.7A
Pulsed drain current: 48A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 39nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 181 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 87.70 грн |
| 10+ | 64.90 грн |
| 25+ | 57.84 грн |
| 100+ | 48.61 грн |
| BXP13N50F |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8.1A; Idm: 52A; 51W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8.1A
Pulsed drain current: 52A
Power dissipation: 51W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 939 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 80.54 грн |
| 10+ | 60.00 грн |
| 25+ | 53.60 грн |
| 100+ | 45.04 грн |
| 250+ | 40.47 грн |
| 500+ | 35.73 грн |
| BXP13N50P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 158W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13A; Idm: 52A; 158W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 158W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.46Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
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| BXP16N65F |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Gate charge: 35nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 10.1A; Idm: 64A; 43W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.1A
Power dissipation: 43W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.56Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 64A
Gate charge: 35nC
товару немає в наявності
Мінімальне замовлення: 1000 шт
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од. на суму грн.
| BXP18N20D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252
Case: TO252
Mounting: SMD
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 90W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tube
Polarisation: unipolar
Gate charge: 23nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 90W; TO252
Case: TO252
Mounting: SMD
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 90W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tube
Polarisation: unipolar
Gate charge: 23nC
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В кошику
од. на суму грн.
| BXP18N20F |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F
Case: TO220F
Mounting: THT
On-state resistance: 0.18Ω
Drain current: 11A
Gate-source voltage: ±30V
Power dissipation: 55W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 55W; TO220F
Case: TO220F
Mounting: THT
On-state resistance: 0.18Ω
Drain current: 11A
Gate-source voltage: ±30V
Power dissipation: 55W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
товару немає в наявності
Мінімальне замовлення: 1000 шт
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од. на суму грн.
| BXP18N20H |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Mounting: THT
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Mounting: THT
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
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| BXP18N20P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220
Case: TO220
Mounting: THT
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 95W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 95W; TO220
Case: TO220
Mounting: THT
On-state resistance: 0.18Ω
Drain current: 18A
Gate-source voltage: ±30V
Power dissipation: 95W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: tube
Polarisation: unipolar
Gate charge: 23nC
товару немає в наявності
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| BXP18N50F |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 679 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 116.34 грн |
| 10+ | 86.17 грн |
| 25+ | 77.11 грн |
| 100+ | 64.90 грн |
| 250+ | 58.50 грн |
| 500+ | 51.44 грн |
| BXP20N50F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 39W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 20A; Idm: 80A; 39W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 39W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Gate charge: 51nC
Kind of package: tube
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP20N50H |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Mounting: THT
Kind of channel: enhancement
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| BXP2N20L |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 185V; 1.2A; Idm: 8A; 2W; SOT23-3
Power dissipation: 2W
Kind of package: reel; tape
Case: SOT23-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.5nC
On-state resistance: 1.8Ω
Drain current: 1.2A
Pulsed drain current: 8A
Gate-source voltage: ±30V
Drain-source voltage: 185V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 185V; 1.2A; Idm: 8A; 2W; SOT23-3
Power dissipation: 2W
Kind of package: reel; tape
Case: SOT23-3
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 4.5nC
On-state resistance: 1.8Ω
Drain current: 1.2A
Pulsed drain current: 8A
Gate-source voltage: ±30V
Drain-source voltage: 185V
на замовлення 1995 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 42+ | 10.74 грн |
| 54+ | 7.81 грн |
| 60+ | 6.98 грн |
| 100+ | 5.90 грн |
| 250+ | 5.24 грн |
| 500+ | 4.65 грн |
| 1000+ | 4.40 грн |
| BXP2N65D |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 8.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 8.5nC
на замовлення 1199 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 30+ | 15.21 грн |
| 37+ | 11.47 грн |
| 41+ | 10.22 грн |
| 100+ | 8.56 грн |
| 250+ | 7.73 грн |
| 500+ | 6.81 грн |
| 1000+ | 6.15 грн |
| BXP2N65F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP2N65N |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 3W
Case: SOT223-3L
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 8.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2A; Idm: 8A; 3W; SOT223-3L
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2A
Power dissipation: 3W
Case: SOT223-3L
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: SMD
Kind of package: reel
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 8.5nC
товару немає в наявності
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| BXP2N65U |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 8.5nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1.21A; Idm: 8A; 44W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1.21A
Power dissipation: 44W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 8A
Gate charge: 8.5nC
на замовлення 1425 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 27+ | 17.00 грн |
| 34+ | 12.55 грн |
| 38+ | 11.22 грн |
| 75+ | 9.39 грн |
| 225+ | 8.48 грн |
| 525+ | 7.48 грн |
| 975+ | 7.06 грн |
| BXP3N1KF |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F
Case: TO220F
Pulsed drain current: 12A
Power dissipation: 25W
Gate charge: 18nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 6Ω
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1000V; 1.6A; Idm: 12A; 25W; TO220F
Case: TO220F
Pulsed drain current: 12A
Power dissipation: 25W
Gate charge: 18nC
Polarisation: unipolar
Drain current: 1.6A
Kind of channel: enhancement
Drain-source voltage: 1kV
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: tube
On-state resistance: 6Ω
Mounting: THT
на замовлення 783 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 59.06 грн |
| 10+ | 47.95 грн |
| 25+ | 38.31 грн |
| 100+ | 28.75 грн |
| 250+ | 25.84 грн |
| 500+ | 22.85 грн |
| BXP4N60D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 13.2nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.5A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 13.2nC
товару немає в наявності
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од. на суму грн.
| BXP4N65D |
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Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 77W
Gate charge: 13nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 77W
Gate charge: 13nC
на замовлення 11878 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.06 грн |
| 23+ | 18.45 грн |
| 26+ | 16.45 грн |
| 100+ | 13.79 грн |
| 250+ | 12.38 грн |
| 500+ | 10.97 грн |
| 1000+ | 9.81 грн |
| 2500+ | 9.31 грн |
| BXP4N65F |
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Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 37W
Gate charge: 13nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 37W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 37W
Gate charge: 13nC
на замовлення 2256 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 18+ | 25.95 грн |
| 22+ | 19.28 грн |
| 30+ | 17.20 грн |
| 120+ | 14.46 грн |
| 240+ | 12.96 грн |
| 480+ | 11.55 грн |
| 960+ | 11.05 грн |
| BXP4N65U |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 77W
Gate charge: 13nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 2.5A; Idm: 16A; 77W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.5A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 2.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 77W
Gate charge: 13nC
на замовлення 1565 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 20+ | 23.27 грн |
| 25+ | 17.12 грн |
| 28+ | 15.29 грн |
| 75+ | 12.88 грн |
| 225+ | 11.55 грн |
| 525+ | 10.22 грн |
| 975+ | 9.22 грн |
| BXP4N80D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.2A; Idm: 16A; 130W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.2A
Pulsed drain current: 16A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BXP4N80F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
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од. на суму грн.
| BXP5N20D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; Idm: 20A; 41W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 41W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Gate charge: 9nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 5A; Idm: 20A; 41W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 41W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Gate charge: 9nC
товару немає в наявності
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од. на суму грн.
| BXP5N20P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
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| BXP6N60D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 24A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 24A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; Idm: 24A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Pulsed drain current: 24A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.7Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.
| BXP7N60D |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 21nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: SMD
Kind of package: reel; tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 21nC
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| BXP7N60F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 45W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 45W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 21nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 45W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 45W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 21nC
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| BXP7N60P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 166W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 166W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 21nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 166W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 166W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 21nC
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| BXP7N60U |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 21nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 21nC
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| BXP7N65CF |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 46W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 46W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 356 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 9+ | 52.80 грн |
| 11+ | 37.98 грн |
| 25+ | 30.58 грн |
| 100+ | 25.68 грн |
| 250+ | 23.10 грн |
| BXP7N65D |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
на замовлення 2400 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 64.43 грн |
| 11+ | 41.13 грн |
| 25+ | 33.24 грн |
| 100+ | 27.92 грн |
| 250+ | 25.10 грн |
| 500+ | 22.19 грн |
| 1000+ | 19.94 грн |
| BXP7N65P |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 167W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 167W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
на замовлення 673 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 7+ | 70.70 грн |
| 10+ | 44.87 грн |
| 25+ | 40.05 грн |
| 100+ | 33.65 грн |
| 250+ | 30.33 грн |
| 500+ | 26.76 грн |
| BXP7N65U |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.9A; Idm: 28A; 145W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.9A
Pulsed drain current: 28A
Power dissipation: 145W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: THT
Gate charge: 21nC
Kind of package: tube
Kind of channel: enhancement
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од. на суму грн.
| BXP7N80F |
![]() |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 28A; 43.9W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Power dissipation: 43.9W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 40nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 4.2A; Idm: 28A; 43.9W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4.2A
Power dissipation: 43.9W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 28A
Gate charge: 40nC
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од. на суму грн.
| BXP8N50D |
![]() |
Виробник: BRIDGELUX
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 32A; 100W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 32A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.3A; Idm: 32A; 100W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.3A
Pulsed drain current: 32A
Power dissipation: 100W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
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| BXP8N50P |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 105W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 105W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 8A; Idm: 32A; 105W; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 105W
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.9Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
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| BXP8N90F |
Виробник: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 8A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 8A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 8A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 8A
Case: TO220F
Mounting: THT
Kind of channel: enhancement
товару немає в наявності
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од. на суму грн.















