Продукция производителя microsemi corporation

Выбрать Страницу:   1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145  Следующая Страница >> ]
Фото Наименование Техн. инф. Производитель Описание В наличии/под заказ
Цена
без НДС
JAN1N6316CUS 11083-lds-0193-1-datasheet Microsemi Corporation Description: VOLTAGE REGULATOR
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Supplier Device Package: B, SQ-MELF
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
JANTXV1N6316D 10924-lds-0193-datasheet Microsemi Corporation Description: VOLTAGE REGULATOR
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±1%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD130-16 MSD130-16 10534-msd130-rev1-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 1.6KV 130A M3
Current - Average Rectified (Io): 130A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 300A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M3
Supplier Device Package: M3
под заказ 34 шт
срок поставки 7-22 дня (дней)
1+ 1533.46 грн
10+ 1486.43 грн
25+ 1474.72 грн
APT40DC120HJ APT40DC120HJ index.php?option=com_docman&task=doc_download&gid=7001 Microsemi Corporation Description: BRIDGE RECT 1P 1.2KV 40A SOT227
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD30-12 MSD30-12 10539-msd30-rev0-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 1.2KV 30A MSD
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: M1
Supplier Device Package: MSD
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSDM75-16 MSDM75-16 MSDM75.pdf Microsemi Corporation Description: BRIDGE RECT 3P 1.6KV 75A M2-1
Current - Average Rectified (Io): 75A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 500µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: M2-1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD75-12 MSD75-12 10544-msd75-rev1-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 1.2KV 75A SM2
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Supplier Device Package: SM2
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD75-08 MSD75-08 10544-msd75-rev1-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 800V 75A SM2
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Supplier Device Package: SM2
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSDM100-16 MSDM100-16 MSDM100.pdf Microsemi Corporation Description: BRIDGE RECT 3P 1.6KV 100A M2-1
Supplier Device Package: M2-1
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 500µA @ 1600V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD100-12 MSD100-12 10532-msd100-rev1-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 1.2KV 100A M3
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Mounting Type: Chassis Mount
Package / Case: M3
Supplier Device Package: M3
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD100-08 MSD100-08 10532-msd100-rev1-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 800V 100A M3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 300µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Package / Case: SM3-20H
Supplier Device Package: M3
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD200-08 MSD200-08 10538-msd200-rev1-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 800V 200A M3
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 300A
Current - Reverse Leakage @ Vr: 300µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M3
Supplier Device Package: M3
Manufacturer: Microsemi Corporation
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTDC40H1201G APTDC40H1201G 7411-aptdc40h1201g-datasheet Microsemi Corporation Description: BRIDGE RECT 1PHASE 1.2KV 40A SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io): 40A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP1
Package / Case: SP1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD30-18 10539-msd30-rev0-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 1.8KV 30A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Average Rectified (Io): 30A
Voltage - Peak Reverse (Max): 1.8kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 200µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: M1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD30-16 MSD30-16 10539-msd30-rev0-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 1.6KV 30A MSD
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: MSD
Package / Case: M1
Mounting Type: QC Terminal
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 200µA @ 1600V
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Average Rectified (Io): 30A
Voltage - Peak Reverse (Max): 1.6kV
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT60DF120HJ APT60DF120HJ APT60DF120HJ.pdf Microsemi Corporation Description: BRIDGE RECT 1P 1.2KV 90A SOT227
Packaging: Bulk
Part Status: Obsolete
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 90A
Voltage - Forward (Vf) (Max) @ If: 3V @ 60A
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD75-18 10544-msd75-rev1-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 1.8KV 75A
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.8kV
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSDM100-08 MSDM100.pdf Microsemi Corporation Description: BRIDGE RECT 3P 800V 100A M2-1
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Reverse Leakage @ Vr: 500µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: M2-1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSDM100-12 MSDM100-12 MSDM100.pdf Microsemi Corporation Description: BRIDGE RECT 3P 1.2KV 100A M2-1
Supplier Device Package: M2-1
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 500µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT100DL60HJ APT100DL60HJ 6557-apt100dl60hj-datasheet Microsemi Corporation Description: BRIDGE RECT 1P 600V 100A SOT227
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 2V @ 100A
Current - Reverse Leakage @ Vr: 250µA @ 600V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 37 шт - цена и срок поставки
MSDM100-18 MSDM100.pdf Microsemi Corporation Description: BRIDGE RECT 3P 1.8KV 100A M2-1
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.8kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: M2-1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD75-16 MSD75-16 10544-msd75-rev1-datasheet Microsemi Corporation Description: BRIDGE RECT 3PHASE 1.6KV 75A SM2
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.6kV
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Supplier Device Package: SM2
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTDC10H601G APTDC10H601G_Oct2012.pdf Microsemi Corporation Description: BRIDGE RECT 1PHASE 600V 10A SP1
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 200µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io): 10A
Voltage - Peak Reverse (Max): 600V
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: SP1
Package / Case: SP1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT10DC120HJ APT10DC120HJ index.php?option=com_docman&task=doc_download&gid=6587 Microsemi Corporation Description: BRIDGE RECT 1P 1.2KV 10A SOT227
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io): 10A
Voltage - Peak Reverse (Max): 1.2kV
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTDC20H601G index.php?option=com_docman&task=doc_download&gid=7408 Microsemi Corporation Description: BRIDGE RECT 1PHASE 600V 20A SP1
Packaging: Bulk
Part Status: Obsolete
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Reverse Leakage @ Vr: 400µA @ 600V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTDF200H170G 7424-aptdf200h170g-datasheet Microsemi Corporation Description: BRIDGE RECT 1P 1.7KV 240A SP6
Base Part Number: APTDF200
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 350µA @ 1700V
Voltage - Forward (Vf) (Max) @ If: 3V @ 200A
Current - Average Rectified (Io): 240A
Voltage - Peak Reverse (Max): 1.7kV
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Manufacturer: Microsemi Corporation
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTDC20H1201G index.php?option=com_docman&task=doc_download&gid=7407 Microsemi Corporation Description: BRIDGE RECT 1PHASE 1.2KV 20A SP1
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT20DC120HJ APT20DC120HJ index.php?option=com_docman&task=doc_download&gid=6718 Microsemi Corporation Description: BRIDGE RECT 1P 1.2KV 20A SOT227
Part Status: Active
Packaging: Bulk
Current - Average Rectified (Io): 20A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTDC40H601G APTDC40H601G 7412-aptdc40h601g-datasheet Microsemi Corporation Description: BRIDGE RECT 1PHASE 600V 40A SP1
Packaging: Bulk
Manufacturer: Microsemi Corporation
Base Part Number: APTDC40
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 800µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io): 40A
Voltage - Peak Reverse (Max): 600V
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
UFT20140 UFT20140 UFT200_201_202.pdf Microsemi Corporation Description: DIODE MODULE 400V 100A
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70ns
Current - Reverse Leakage @ Vr: 50µA @ 400V
Mounting Type: Screw Mount
Package / Case: Module
Supplier Device Package: Module
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 330 шт - цена и срок поставки
CPT60045 CPT60045 CPT60035-45_Dwg.pdf Microsemi Corporation Description: DIODE MODULE 45V 300A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 2A @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT2X51DC120J APT2X51DC120J doc_details Microsemi Corporation Description: DIODE MODULE 1.2KV 50A SOT227
Packaging: Bulk
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 50A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT2X60DC120J APT2X60DC120J index.php?option=com_docman&task=doc_download&gid=6855 Microsemi Corporation Description: DIODE MODULE 1.2KV 60A SOT227
Packaging: Bulk
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1.2mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT2X61D40J APT2X61D40J 6167-apt2x61d40j-apt2x60d40j-datasheet Microsemi Corporation Description: DIODE MODULE 400V 60A ISOTOP
Packaging: Tube
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37ns
Current - Reverse Leakage @ Vr: 250µA @ 400V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
под заказ 23 шт
срок поставки 7-22 дня (дней)
1+ 925.82 грн
10+ 853.73 грн
APT2X100DQ100J APT2X100DQ100J 123802-apt2x101dq100j-apt2x100dq100j-datasheet Microsemi Corporation Description: DIODE MODULE 1KV 100A ISOTOP
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Reverse Recovery Time (trr): 290ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Tube
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSCD60-12 MSCD60-12 MSxD60.pdf Microsemi Corporation Description: DIODE MODULE 1.2KV 60A D1
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Packaging: Bulk
Part Status: Obsolete
Manufacturer: Microsemi Corporation
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
под заказ 1 шт
срок поставки 7-22 дня (дней)
под заказ 1 шт - цена и срок поставки
1+ 635.95 грн
MSCD60-16 MSCD60-16 MSxD60.pdf Microsemi Corporation Description: DIODE MODULE 1.6KV 60A D1
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 1600V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSKD60-16 MSKD60-16 MSxD60.pdf Microsemi Corporation Description: DIODE MODULE 1.6KV 60A D1
Supplier Device Package: D1
Package / Case: D1
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 1600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 60A
Voltage - DC Reverse (Vr) (Max): 1600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT2X31D120J APT2X31D120J 6158-apt2x31d120j-apt2x30d120j-datasheet Microsemi Corporation Description: DIODE MODULE 1.2KV 30A ISOTOP
Packaging: Tube
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
под заказ 19 шт
срок поставки 7-22 дня (дней)
1+ 1089.35 грн
10+ 1004.8 грн
MSKD100-08 MSKD100-08 127505-msk-a-cd100-rev1 Microsemi Corporation Description: DIODE MODULE 800V 100A D1
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 800V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSKD100-12 MSKD100-12 127505-msk-a-cd100-rev1 Microsemi Corporation Description: DIODE MODULE 1.2KV 100A D1
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSCD120-12 MSCD120-12 MSxD120.pdf Microsemi Corporation Description: DIODE MODULE 1.2KV 120A D1
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Supplier Device Package: D1
Package / Case: D1
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 6mA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
Current - Average Rectified (Io) (per Diode): 120A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
под заказ 1 шт
срок поставки 7-22 дня (дней)
1+ 894.55 грн
MSCD120-16 MSCD120-16 MSxD120.pdf Microsemi Corporation Description: DIODE MODULE 1.6KV 120A D1
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 120A
Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 6mA @ 1600V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT2X150DL60J APT2X150DL60J index.php?option=com_docman&task=doc_download&gid=6840 Microsemi Corporation Description: DIODE MODULE 600V 150A ISOTOP
Manufacturer: Microsemi Corporation
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 25µA @ 600V
Reverse Recovery Time (trr): 408ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 2 Independent
Part Status: Obsolete
Packaging: Tube
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
HS123100 HS123100 HS12380,90,100.pdf Microsemi Corporation Description: DIODE SCHOTTKY 100V 120A HALFPAK
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 910mV @ 120A
Current - Average Rectified (Io): 120A
Voltage - DC Reverse (Vr) (Max): 100V
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 3mA @ 100V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
UFT7260SM5D UFT7260SM5D Microsemi Corporation Description: DIODE MODULE 600V 35A SM5
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
Current - Average Rectified (Io) (per Diode): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25µA @ 600V
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SM5
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
FST153100 FST153100 Microsemi Corporation Description: DIODE MODULE 100V 75A TO249
Supplier Device Package: TO-249
Package / Case: TO-249-9, TO-249AA Variant
Mounting Type: Screw Mount
Current - Reverse Leakage @ Vr: 1.5mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 940mV @ 75A
Current - Average Rectified (Io) (per Diode): 75A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
FST60100 FST60100 FST6080-FST60100_Dwg.pdf Microsemi Corporation Description: DIODE MODULE 100V 60A TO249
Current - Reverse Leakage @ Vr: 2mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 860mV @ 60A
Current - Average Rectified (Io) (per Diode): 60A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-249
Package / Case: TO-249-9, TO-249AA Variant
Mounting Type: Chassis Mount
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
UFT14140 UFT14140 Microsemi Corporation Description: DIODE MODULE 400V 70A TO249
Mounting Type: Screw Mount
Package / Case: TO-249AA
Supplier Device Package: TO-249
Current - Reverse Leakage @ Vr: 25µA @ 400V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 70A
Current - Average Rectified (Io) (per Diode): 70A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
FST16050 FST16050 FST16035-FST16050.pdf Microsemi Corporation Description: DIODE MODULE 50V 80A TO249
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io) (per Diode): 80A
Voltage - Forward (Vf) (Max) @ If: 740mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 2mA @ 50V
Mounting Type: Chassis Mount
Package / Case: TO-249AA Isolated Base
Supplier Device Package: TO-249
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
HS246150 HS246150 HS246150(R).pdf Microsemi Corporation Description: DIODE SCHOTTKY 150V 240A HALFPAK
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Capacitance @ Vr, F: 6000pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 8mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A
Current - Average Rectified (Io): 240A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
HU10260 HU10260 HU100,101,102.pdf Microsemi Corporation Description: DIODE GEN PURP 600V 100A HALFPAK
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Capacitance @ Vr, F: 275pF @ 10V, 1Mhz
Current - Reverse Leakage @ Vr: 50µA @ 600V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
Current - Average Rectified (Io): 100A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
CPT40145 CPT40145 CPT40130-CPT40145.pdf Microsemi Corporation Description: DIODE MODULE 45V 200A MD3CC
Supplier Device Package: MD3CC
Package / Case: MD3CC
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 570mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
HU20260 HU20260 Microsemi Corporation Description: DIODE GEN PURP 600V 200A HALFPAK
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 50µA @ 600V
Reverse Recovery Time (trr): 130ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
Current - Average Rectified (Io): 200A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Bulk
под заказ 3 шт
срок поставки 7-22 дня (дней)
под заказ 3 шт - цена и срок поставки
1+ 3350.88 грн
CPT50060 CPT50060 CPT50060.pdf Microsemi Corporation Description: DIODE MODULE 60V 250A 2TOWER
Part Status: Obsolete
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 730mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 280 шт - цена и срок поставки
CPT500100 CPT500100 Microsemi Corporation Description: DIODE MODULE 100V 250A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 100 шт - цена и срок поставки
APT2X21DC120J APT2X21DC120J 6842-apt2x21dc120j-apt2x20dc120j-datasheet Microsemi Corporation Description: DIODE MODULE 1.2KV 20A SOT227
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Average Rectified (Io) (per Diode): 20A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Supplier Device Package: SOT-227
Package / Case: ISOTOP
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
SDM30004 SDM30004 SDM300.pdf Microsemi Corporation Description: DIODE GEN PURP 400V 300A MODULE
Packaging: Bulk
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 75µA @ 400V
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Manufacturer: Microsemi Corporation
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTDF400KK170G APTDF400KK170G 7442-aptdf400kk170g-datasheet Microsemi Corporation Description: DIODE MODULE 1.7KV 480A SP6
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io) (per Diode): 480A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 400A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 572ns
Current - Reverse Leakage @ Vr: 750µA @ 1700V
Mounting Type: Chassis Mount
Package / Case: LP4
Supplier Device Package: SP6
под заказ 1 шт
срок поставки 7-22 дня (дней)
1+ 6448.22 грн
APT2X41DC120J APT2X41DC120J 6850-apt2x41dc120j-apt2x40dc120j-datasheet Microsemi Corporation Description: DIODE MODULE 1.2KV 40A SOT227
Supplier Device Package: SOT-227
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io) (per Diode): 40A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Diode Configuration: 2 Independent
Part Status: Active
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT2X61DC120J APT2X61DC120J 6855-apt2x61dc120j-apt2x60dc120j-datasheet Microsemi Corporation Description: DIODE MODULE 1.2KV 60A SOT227
Current - Reverse Leakage @ Vr: 1.2mA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Current - Average Rectified (Io) (per Diode): 60A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Bulk
под заказ 202 шт
срок поставки 7-22 дня (дней)
1+ 6105.52 грн
10+ 5706.63 грн
25+ 5507.11 грн
APTM50HM75STG APTM50HM75STG index.php?option=com_docman&task=doc_download&gid=8195 Microsemi Corporation Description: MOSFET 4N-CH 500V 46A SP4
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 357W
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A
Drain to Source Voltage (Vdss): 500V
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
под заказ 40 шт
срок поставки 7-22 дня (дней)
1+ 4761.37 грн
10+ 4463.8 грн
25+ 4255.48 грн
APTM10AM02FG APTM10AM02FG index.php?option=com_docman&task=doc_download&gid=8040 Microsemi Corporation Description: MOSFET 2N-CH 100V 495A SP6
Supplier Device Package: SP6
Package / Case: SP6
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Power - Max: 1250W
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Vgs(th) (Max) @ Id: 4V @ 10mA
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Current - Continuous Drain (Id) @ 25°C: 495A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Bulk
под заказ 71 шт
срок поставки 7-22 дня (дней)
1+ 9232.02 грн
10+ 8842.08 грн
25+ 8647.02 грн
APT17F120J APT17F120J 6692-apt17f120j-datasheet Microsemi Corporation Description: MOSFET N-CH 1200V 18A SOT-227
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 580mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V
Power Dissipation (Max): 545W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT10M11JVRU2 APT10M11JVRU2 APT10M11JVRU2.pdf Microsemi Corporation Description: MOSFET N-CH 100V 142A SOT227
Packaging: Bulk
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 71A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Power Dissipation (Max): 450W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT10035JLL APT10035JLL 123944-apt10035jll-c-pdf Microsemi Corporation Description: MOSFET N-CH 1000V 25A SOT-227
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V
Power Dissipation (Max): 520W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT20M22JVRU2 APT20M22JVRU2 6750-apt20m22jvru2-datasheet Microsemi Corporation Description: MOSFET N-CH 200V 97A SOT-227
Power Dissipation (Max): 450W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 48.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT100F50J APT100F50J 6559-apt100f50j-datasheet Microsemi Corporation Description: MOSFET N-CH 500V 103A SOT227
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 24600pF @ 25V
Power Dissipation (Max): 960W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT60M75JFLL APT60M75JFLL 6442-apt60m75jfll-datasheet Microsemi Corporation Description: MOSFET N-CH 600V 58A SOT-227
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 595W (Tc)
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 75mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
под заказ 8 шт
срок поставки 7-22 дня (дней)
1+ 2237.86 грн
APT60M75JLL APT60M75JLL 6443-apt60m75jll-datasheet Microsemi Corporation Description: MOSFET N-CH 600V 58A SOT-227
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 595W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V
Rds On (Max) @ Id, Vgs: 75mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM10HM19FT3G APTM10HM19FT3G index.php?option=com_docman&task=doc_download&gid=8057 Microsemi Corporation Description: MOSFET 4N-CH 100V 70A SP3
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 208W
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP3
Package / Case: SP3
Mounting Type: Chassis Mount
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT33N90JCCU2 APT33N90JCCU2 doc_details Microsemi Corporation Description: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Manufacturer: Microsemi Corporation
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT10021JLL APT10021JLL 5610-apt10021jll-datasheet Microsemi Corporation Description: MOSFET N-CH 1000V 37A SOT-227
Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 395nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 18.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
под заказ 1 шт
срок поставки 7-22 дня (дней)
1+ 3269.32 грн
APTM100H45STG APTM100H45STG index.php?option=com_docman&task=doc_download&gid=8015 Microsemi Corporation Description: MOSFET 4N-CH 1000V 18A SP4
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 357W
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
под заказ 8 шт
срок поставки 7-22 дня (дней)
1+ 5783.96 грн
APTM100A18FTG APTM100A18FTG index.php?option=com_docman&task=doc_download&gid=7992 Microsemi Corporation Description: MOSFET 2N-CH 1000V 43A SP4
Power - Max: 780W
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Type: 2 N-Channel (Half Bridge)
Packaging: Bulk
Part Status: Active
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM10HM05FG APTM10HM05FG index.php?option=com_docman&task=doc_download&gid=8054 Microsemi Corporation Description: MOSFET 4N-CH 100V 278A SP6
Vgs(th) (Max) @ Id: 4V @ 5mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Current - Continuous Drain (Id) @ 25°C: 278A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 780W
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM20UM03FAG APTM20UM03FAG index.php?option=com_docman&task=doc_download&gid=8144 Microsemi Corporation Description: MOSFET N-CH 200V 580A SP6
Input Capacitance (Ciss) (Max) @ Vds: 43300pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 840nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 15mA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Bulk
Power Dissipation (Max): 2270W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP6
Package / Case: SP6
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM100H18FG APTM100H18FG index.php?option=com_docman&task=doc_download&gid=8009 Microsemi Corporation Description: MOSFET 4N-CH 1000V 43A SP6
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 780W
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM100AM90FG APTM100AM90FG index.php?option=com_docman&task=doc_download&gid=7998 Microsemi Corporation Description: MOSFET 2N-CH 1000V 78A SP6
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 1250W
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Current - Continuous Drain (Id) @ 25°C: 78A
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Part Status: Active
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
2N6849 2N6849 8809-lds-0009-datasheet Microsemi Corporation Description: MOSFET P-CH 100V 6.5A TO39
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AF Metal Can
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 12 шт - цена и срок поставки
2N6804 125024-lds-0113-datasheet Microsemi Corporation Description: MOSFET P-CH 100V TO-204AA TO-3
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA (TO-3)
Package / Case: TO-204AA, TO-3
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 120 шт - цена и срок поставки
2N6762 8925-lds-0111-datasheet Microsemi Corporation Description: MOSFET N-CH 500V TO-3
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA
Package / Case: TO-204AA, TO-3
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 3200 шт - цена и срок поставки
2N6760 8925-lds-0111-datasheet Microsemi Corporation Description: MOSFET N-CH 400V 5.5A TO204AA
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA
Package / Case: TO-204AA, TO-3
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 1800 шт - цена и срок поставки
2N6766 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH 200V TO-204AE TO-3
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3
Package / Case: TO-204AE
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT20M22JVRU3 APT20M22JVRU3 6751-apt20m22jvru3-datasheet Microsemi Corporation Description: MOSFET N-CH 200V 97A SOT-227
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 48.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 450W (Tc)
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT10M11JVRU3 APT10M11JVRU3 APT10M11JVRU3.pdf Microsemi Corporation Description: MOSFET N-CH 100V 142A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 11mOhm @ 71A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 450W (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
под заказ 3 шт
срок поставки 7-22 дня (дней)
1+ 1328.94 грн
APTM100DA33T1G index.php?option=com_docman&task=doc_download&gid=8002 Microsemi Corporation Description: MOSFET N-CH 1000V 23A SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Package / Case: SP1
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM100SK33T1G index.php?option=com_docman&task=doc_download&gid=8019 Microsemi Corporation Description: MOSFET N-CH 1000V 23A SP1
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Package / Case: SP1
Supplier Device Package: SP1
Mounting Type: Chassis Mount
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM120DA56T1G Microsemi Corporation Description: MOSFET N-CH 1200V 18A SP1
Drain to Source Voltage (Vdss): 1200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Package / Case: SP1
Supplier Device Package: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM120SK56T1G APTM120SK56T1G.pdf Microsemi Corporation Description: MOSFET N-CH 1200V 18A SP1
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
Power Dissipation (Max): 390W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM60H23FT1G APTM60H23UT1G-Rev0.pdf Microsemi Corporation Description: MOSFET 4N-CH 600V 20A SP1
Packaging: Bulk
Part Status: Active
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 276mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT45M100J APT45M100J 7053-apt45m100j-datasheet Microsemi Corporation Description: MOSFET N-CH 1000V 45A SOT-227
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 180mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 960W (Tc)
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTC60AM83B1G Microsemi Corporation Description: MOSFET 3N-CH 600V 36A SP1
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 250W
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 3mA
Rds On (Max) @ Id, Vgs: 83mOhm @ 24.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A
Drain to Source Voltage (Vdss): 600V
FET Feature: Super Junction
FET Type: 3 N Channel (Phase Leg + Boost Chopper)
Part Status: Obsolete
Packaging: Tray
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTC60DSKM45T1G Microsemi Corporation Description: MOSFET 2N-CH 600V 49A SP1
Packaging: Tray
Part Status: Obsolete
FET Type: 2 N Channel (Dual Buck Chopper)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTC80DSK15T3G Microsemi Corporation Description: MOSFET 2N-CH 800V 28A SP3
Supplier Device Package: SP3
Package / Case: SP3
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 277W
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
FET Feature: Standard
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT33N90JCCU3 APT33N90JCCU3 Microsemi Corporation Description: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Manufacturer: Microsemi Corporation
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
2N6766T1 77270-lds-0101-datasheet Microsemi Corporation Description: MOSFET N-CH 200V 30A TO254AA
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTC90SKM60T1G 7394-aptc90skm60t1g-datasheet Microsemi Corporation Description: MOSFET N-CH 900V 59A SP1
Packaging: Tray
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 462W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTC90DSK12T1G APTC90DSK12T1G.pdf Microsemi Corporation Description: MOSFET 2N-CH 900V 30A SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 250W
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A
Drain to Source Voltage (Vdss): 900V
FET Feature: Super Junction
FET Type: 2 N Channel (Dual Buck Chopper)
Part Status: Obsolete
Supplier Device Package: SP1
Packaging: Tray
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM10DHM09T3G Microsemi Corporation Description: MOSFET 2N-CH 100V 139A SP3
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
JAN1N6316CUS 11083-lds-0193-1-datasheet
Производитель: Microsemi Corporation
Description: VOLTAGE REGULATOR
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Supplier Device Package: B, SQ-MELF
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±2%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
JANTXV1N6316D 10924-lds-0193-datasheet
Производитель: Microsemi Corporation
Description: VOLTAGE REGULATOR
Supplier Device Package: DO-35 (DO-204AH)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 1.5V
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Impedance (Max) (Zzt): 17 Ohms
Power - Max: 500mW
Tolerance: ±1%
Voltage - Zener (Nom) (Vz): 4.7V
Part Status: Active
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD130-16 10534-msd130-rev1-datasheet
MSD130-16
Производитель: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.6KV 130A M3
Current - Average Rectified (Io): 130A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 300A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M3
Supplier Device Package: M3
под заказ 34 шт
срок поставки 7-22 дня (дней)
1+ 1533.46 грн
10+ 1486.43 грн
25+ 1474.72 грн
APT40DC120HJ index.php?option=com_docman&task=doc_download&gid=7001
APT40DC120HJ
Производитель: Microsemi Corporation
Description: BRIDGE RECT 1P 1.2KV 40A SOT227
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD30-12 10539-msd30-rev0-datasheet
MSD30-12
Производитель: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.2KV 30A MSD
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: M1
Supplier Device Package: MSD
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSDM75-16 MSDM75.pdf
MSDM75-16
Производитель: Microsemi Corporation
Description: BRIDGE RECT 3P 1.6KV 75A M2-1
Current - Average Rectified (Io): 75A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 500µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: M2-1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD75-12 10544-msd75-rev1-datasheet
MSD75-12
Производитель: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.2KV 75A SM2
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Supplier Device Package: SM2
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD75-08 10544-msd75-rev1-datasheet
MSD75-08
Производитель: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 75A SM2
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Supplier Device Package: SM2
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSDM100-16 MSDM100.pdf
MSDM100-16
Производитель: Microsemi Corporation
Description: BRIDGE RECT 3P 1.6KV 100A M2-1
Supplier Device Package: M2-1
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 500µA @ 1600V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.6kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD100-12 10532-msd100-rev1-datasheet
MSD100-12
Производитель: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.2KV 100A M3
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 300µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Mounting Type: Chassis Mount
Package / Case: M3
Supplier Device Package: M3
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD100-08 10532-msd100-rev1-datasheet
MSD100-08
Производитель: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 100A M3
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 300µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Package / Case: SM3-20H
Supplier Device Package: M3
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD200-08 10538-msd200-rev1-datasheet
MSD200-08
Производитель: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 200A M3
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 200A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 300A
Current - Reverse Leakage @ Vr: 300µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M3
Supplier Device Package: M3
Manufacturer: Microsemi Corporation
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTDC40H1201G 7411-aptdc40h1201g-datasheet
APTDC40H1201G
Производитель: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 1.2KV 40A SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io): 40A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP1
Package / Case: SP1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD30-18 10539-msd30-rev0-datasheet
Производитель: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.8KV 30A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Average Rectified (Io): 30A
Voltage - Peak Reverse (Max): 1.8kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 200µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: QC Terminal
Package / Case: M1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD30-16 10539-msd30-rev0-datasheet
MSD30-16
Производитель: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.6KV 30A MSD
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: MSD
Package / Case: M1
Mounting Type: QC Terminal
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 200µA @ 1600V
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 100A
Current - Average Rectified (Io): 30A
Voltage - Peak Reverse (Max): 1.6kV
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT60DF120HJ APT60DF120HJ.pdf
APT60DF120HJ
Производитель: Microsemi Corporation
Description: BRIDGE RECT 1P 1.2KV 90A SOT227
Packaging: Bulk
Part Status: Obsolete
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 90A
Voltage - Forward (Vf) (Max) @ If: 3V @ 60A
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD75-18 10544-msd75-rev1-datasheet
Производитель: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.8KV 75A
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.8kV
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSDM100-08 MSDM100.pdf
Производитель: Microsemi Corporation
Description: BRIDGE RECT 3P 800V 100A M2-1
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Reverse Leakage @ Vr: 500µA @ 800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: M2-1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSDM100-12 MSDM100.pdf
MSDM100-12
Производитель: Microsemi Corporation
Description: BRIDGE RECT 3P 1.2KV 100A M2-1
Supplier Device Package: M2-1
Package / Case: Module
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 500µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT100DL60HJ 6557-apt100dl60hj-datasheet
APT100DL60HJ
Производитель: Microsemi Corporation
Description: BRIDGE RECT 1P 600V 100A SOT227
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 2V @ 100A
Current - Reverse Leakage @ Vr: 250µA @ 600V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 37 шт - цена и срок поставки
MSDM100-18 MSDM100.pdf
Производитель: Microsemi Corporation
Description: BRIDGE RECT 3P 1.8KV 100A M2-1
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 300A
Current - Average Rectified (Io): 100A
Voltage - Peak Reverse (Max): 1.8kV
Technology: Standard
Diode Type: Three Phase
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 500µA @ 1800V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: M2-1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSD75-16 10544-msd75-rev1-datasheet
MSD75-16
Производитель: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.6KV 75A SM2
Packaging: Bulk
Part Status: Obsolete
Diode Type: Three Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1.6kV
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Reverse Leakage @ Vr: 300µA @ 1600V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: M2
Supplier Device Package: SM2
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTDC10H601G APTDC10H601G_Oct2012.pdf
Производитель: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 600V 10A SP1
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 200µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io): 10A
Voltage - Peak Reverse (Max): 600V
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: SP1
Package / Case: SP1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT10DC120HJ index.php?option=com_docman&task=doc_download&gid=6587
APT10DC120HJ
Производитель: Microsemi Corporation
Description: BRIDGE RECT 1P 1.2KV 10A SOT227
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 200µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 10A
Current - Average Rectified (Io): 10A
Voltage - Peak Reverse (Max): 1.2kV
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTDC20H601G index.php?option=com_docman&task=doc_download&gid=7408
Производитель: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 600V 20A SP1
Packaging: Bulk
Part Status: Obsolete
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Reverse Leakage @ Vr: 400µA @ 600V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTDF200H170G 7424-aptdf200h170g-datasheet
Производитель: Microsemi Corporation
Description: BRIDGE RECT 1P 1.7KV 240A SP6
Base Part Number: APTDF200
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 350µA @ 1700V
Voltage - Forward (Vf) (Max) @ If: 3V @ 200A
Current - Average Rectified (Io): 240A
Voltage - Peak Reverse (Max): 1.7kV
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Bulk
Manufacturer: Microsemi Corporation
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTDC20H1201G index.php?option=com_docman&task=doc_download&gid=7407
Производитель: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 1.2KV 20A SP1
Packaging: Bulk
Part Status: Active
Diode Type: Single Phase
Technology: Silicon Carbide Schottky
Voltage - Peak Reverse (Max): 1.2kV
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT20DC120HJ index.php?option=com_docman&task=doc_download&gid=6718
APT20DC120HJ
Производитель: Microsemi Corporation
Description: BRIDGE RECT 1P 1.2KV 20A SOT227
Part Status: Active
Packaging: Bulk
Current - Average Rectified (Io): 20A
Voltage - Peak Reverse (Max): 1.2kV
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 175°C (TJ)
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTDC40H601G 7412-aptdc40h601g-datasheet
APTDC40H601G
Производитель: Microsemi Corporation
Description: BRIDGE RECT 1PHASE 600V 40A SP1
Packaging: Bulk
Manufacturer: Microsemi Corporation
Base Part Number: APTDC40
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Current - Reverse Leakage @ Vr: 800µA @ 600V
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io): 40A
Voltage - Peak Reverse (Max): 600V
Technology: Silicon Carbide Schottky
Diode Type: Single Phase
Part Status: Active
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
UFT20140 UFT200_201_202.pdf
UFT20140
Производитель: Microsemi Corporation
Description: DIODE MODULE 400V 100A
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70ns
Current - Reverse Leakage @ Vr: 50µA @ 400V
Mounting Type: Screw Mount
Package / Case: Module
Supplier Device Package: Module
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 330 шт - цена и срок поставки
CPT60045 CPT60035-45_Dwg.pdf
CPT60045
Производитель: Microsemi Corporation
Description: DIODE MODULE 45V 300A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 2A @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 650mV @ 300A
Current - Average Rectified (Io) (per Diode): 300A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT2X51DC120J doc_details
APT2X51DC120J
Производитель: Microsemi Corporation
Description: DIODE MODULE 1.2KV 50A SOT227
Packaging: Bulk
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 50A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 50A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT2X60DC120J index.php?option=com_docman&task=doc_download&gid=6855
APT2X60DC120J
Производитель: Microsemi Corporation
Description: DIODE MODULE 1.2KV 60A SOT227
Packaging: Bulk
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 1.2mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT2X61D40J 6167-apt2x61d40j-apt2x60d40j-datasheet
APT2X61D40J
Производитель: Microsemi Corporation
Description: DIODE MODULE 400V 60A ISOTOP
Packaging: Tube
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 60A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 37ns
Current - Reverse Leakage @ Vr: 250µA @ 400V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
под заказ 23 шт
срок поставки 7-22 дня (дней)
1+ 925.82 грн
10+ 853.73 грн
APT2X100DQ100J 123802-apt2x101dq100j-apt2x100dq100j-datasheet
APT2X100DQ100J
Производитель: Microsemi Corporation
Description: DIODE MODULE 1KV 100A ISOTOP
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Reverse Recovery Time (trr): 290ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A
Current - Average Rectified (Io) (per Diode): 100A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Tube
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSCD60-12 MSxD60.pdf
MSCD60-12
Производитель: Microsemi Corporation
Description: DIODE MODULE 1.2KV 60A D1
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Packaging: Bulk
Part Status: Obsolete
Manufacturer: Microsemi Corporation
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
под заказ 1 шт
срок поставки 7-22 дня (дней)
под заказ 1 шт - цена и срок поставки
1+ 635.95 грн
MSCD60-16 MSxD60.pdf
MSCD60-16
Производитель: Microsemi Corporation
Description: DIODE MODULE 1.6KV 60A D1
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 1600V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSKD60-16 MSxD60.pdf
MSKD60-16
Производитель: Microsemi Corporation
Description: DIODE MODULE 1.6KV 60A D1
Supplier Device Package: D1
Package / Case: D1
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 5mA @ 1600V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 200A
Current - Average Rectified (Io) (per Diode): 60A
Voltage - DC Reverse (Vr) (Max): 1600V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT2X31D120J 6158-apt2x31d120j-apt2x30d120j-datasheet
APT2X31D120J
Производитель: Microsemi Corporation
Description: DIODE MODULE 1.2KV 30A ISOTOP
Packaging: Tube
Part Status: Active
Diode Configuration: 2 Independent
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 30A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 370ns
Current - Reverse Leakage @ Vr: 250µA @ 1200V
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
под заказ 19 шт
срок поставки 7-22 дня (дней)
1+ 1089.35 грн
10+ 1004.8 грн
MSKD100-08 127505-msk-a-cd100-rev1
MSKD100-08
Производитель: Microsemi Corporation
Description: DIODE MODULE 800V 100A D1
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 800V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSKD100-12 127505-msk-a-cd100-rev1
MSKD100-12
Производитель: Microsemi Corporation
Description: DIODE MODULE 1.2KV 100A D1
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io) (per Diode): 100A
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5mA @ 1200V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
MSCD120-12 MSxD120.pdf
MSCD120-12
Производитель: Microsemi Corporation
Description: DIODE MODULE 1.2KV 120A D1
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Supplier Device Package: D1
Package / Case: D1
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 6mA @ 1200V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
Current - Average Rectified (Io) (per Diode): 120A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
под заказ 1 шт
срок поставки 7-22 дня (дней)
1+ 894.55 грн
MSCD120-16 MSxD120.pdf
MSCD120-16
Производитель: Microsemi Corporation
Description: DIODE MODULE 1.6KV 120A D1
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Series Connection
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600V
Current - Average Rectified (Io) (per Diode): 120A
Voltage - Forward (Vf) (Max) @ If: 1.43V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 6mA @ 1600V
Mounting Type: Chassis Mount
Package / Case: D1
Supplier Device Package: D1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT2X150DL60J index.php?option=com_docman&task=doc_download&gid=6840
APT2X150DL60J
Производитель: Microsemi Corporation
Description: DIODE MODULE 600V 150A ISOTOP
Manufacturer: Microsemi Corporation
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 25µA @ 600V
Reverse Recovery Time (trr): 408ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.6V @ 150A
Current - Average Rectified (Io) (per Diode): 150A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 2 Independent
Part Status: Obsolete
Packaging: Tube
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
HS123100 HS12380,90,100.pdf
HS123100
Производитель: Microsemi Corporation
Description: DIODE SCHOTTKY 100V 120A HALFPAK
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 910mV @ 120A
Current - Average Rectified (Io): 120A
Voltage - DC Reverse (Vr) (Max): 100V
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Capacitance @ Vr, F: 3000pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 3mA @ 100V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
UFT7260SM5D
UFT7260SM5D
Производитель: Microsemi Corporation
Description: DIODE MODULE 600V 35A SM5
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 35A
Current - Average Rectified (Io) (per Diode): 35A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Diode Configuration: 1 Pair Series Connection
Part Status: Obsolete
Packaging: Bulk
Current - Reverse Leakage @ Vr: 25µA @ 600V
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: SM5
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
FST153100
FST153100
Производитель: Microsemi Corporation
Description: DIODE MODULE 100V 75A TO249
Supplier Device Package: TO-249
Package / Case: TO-249-9, TO-249AA Variant
Mounting Type: Screw Mount
Current - Reverse Leakage @ Vr: 1.5mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 940mV @ 75A
Current - Average Rectified (Io) (per Diode): 75A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
FST60100 FST6080-FST60100_Dwg.pdf
FST60100
Производитель: Microsemi Corporation
Description: DIODE MODULE 100V 60A TO249
Current - Reverse Leakage @ Vr: 2mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 860mV @ 60A
Current - Average Rectified (Io) (per Diode): 60A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-249
Package / Case: TO-249-9, TO-249AA Variant
Mounting Type: Chassis Mount
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
UFT14140
UFT14140
Производитель: Microsemi Corporation
Description: DIODE MODULE 400V 70A TO249
Mounting Type: Screw Mount
Package / Case: TO-249AA
Supplier Device Package: TO-249
Current - Reverse Leakage @ Vr: 25µA @ 400V
Reverse Recovery Time (trr): 60ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 70A
Current - Average Rectified (Io) (per Diode): 70A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
FST16050 FST16035-FST16050.pdf
FST16050
Производитель: Microsemi Corporation
Description: DIODE MODULE 50V 80A TO249
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io) (per Diode): 80A
Voltage - Forward (Vf) (Max) @ If: 740mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 2mA @ 50V
Mounting Type: Chassis Mount
Package / Case: TO-249AA Isolated Base
Supplier Device Package: TO-249
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
HS246150 HS246150(R).pdf
HS246150
Производитель: Microsemi Corporation
Description: DIODE SCHOTTKY 150V 240A HALFPAK
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Capacitance @ Vr, F: 6000pF @ 5V, 1MHz
Current - Reverse Leakage @ Vr: 8mA @ 150V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 860mV @ 240A
Current - Average Rectified (Io): 240A
Voltage - DC Reverse (Vr) (Max): 150V
Diode Type: Schottky
Part Status: Obsolete
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
HU10260 HU100,101,102.pdf
HU10260
Производитель: Microsemi Corporation
Description: DIODE GEN PURP 600V 100A HALFPAK
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Capacitance @ Vr, F: 275pF @ 10V, 1Mhz
Current - Reverse Leakage @ Vr: 50µA @ 600V
Reverse Recovery Time (trr): 90ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 100A
Current - Average Rectified (Io): 100A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
CPT40145 CPT40130-CPT40145.pdf
CPT40145
Производитель: Microsemi Corporation
Description: DIODE MODULE 45V 200A MD3CC
Supplier Device Package: MD3CC
Package / Case: MD3CC
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 10mA @ 45V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 570mV @ 200A
Current - Average Rectified (Io) (per Diode): 200A
Voltage - DC Reverse (Vr) (Max): 45V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Part Status: Obsolete
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
HU20260
HU20260
Производитель: Microsemi Corporation
Description: DIODE GEN PURP 600V 200A HALFPAK
Supplier Device Package: HALF-PAK
Package / Case: HALF-PAK
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 50µA @ 600V
Reverse Recovery Time (trr): 130ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.35V @ 200A
Current - Average Rectified (Io): 200A
Voltage - DC Reverse (Vr) (Max): 600V
Diode Type: Standard
Part Status: Obsolete
Packaging: Bulk
под заказ 3 шт
срок поставки 7-22 дня (дней)
под заказ 3 шт - цена и срок поставки
1+ 3350.88 грн
CPT50060 CPT50060.pdf
CPT50060
Производитель: Microsemi Corporation
Description: DIODE MODULE 60V 250A 2TOWER
Part Status: Obsolete
Packaging: Bulk
Voltage - DC Reverse (Vr) (Max): 60V
Diode Type: Schottky
Diode Configuration: 1 Pair Common Cathode
Supplier Device Package: Twin Tower
Package / Case: Twin Tower
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 60V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 730mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 280 шт - цена и срок поставки
CPT500100
CPT500100
Производитель: Microsemi Corporation
Description: DIODE MODULE 100V 250A TO244AB
Supplier Device Package: TO-244AB
Package / Case: TO-244AB
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 8mA @ 100V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 900mV @ 250A
Current - Average Rectified (Io) (per Diode): 250A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Schottky
Packaging: Bulk
Part Status: Obsolete
Diode Configuration: 1 Pair Common Cathode
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 100 шт - цена и срок поставки
APT2X21DC120J 6842-apt2x21dc120j-apt2x20dc120j-datasheet
APT2X21DC120J
Производитель: Microsemi Corporation
Description: DIODE MODULE 1.2KV 20A SOT227
Mounting Type: Chassis Mount
Operating Temperature - Junction: -55°C ~ 175°C
Current - Reverse Leakage @ Vr: 400µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
Current - Average Rectified (Io) (per Diode): 20A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Supplier Device Package: SOT-227
Package / Case: ISOTOP
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
SDM30004 SDM300.pdf
SDM30004
Производитель: Microsemi Corporation
Description: DIODE GEN PURP 400V 300A MODULE
Packaging: Bulk
Part Status: Obsolete
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 300A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 75µA @ 400V
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: Module
Manufacturer: Microsemi Corporation
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTDF400KK170G 7442-aptdf400kk170g-datasheet
APTDF400KK170G
Производитель: Microsemi Corporation
Description: DIODE MODULE 1.7KV 480A SP6
Packaging: Bulk
Part Status: Active
Diode Configuration: 1 Pair Common Cathode
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1700V
Current - Average Rectified (Io) (per Diode): 480A
Voltage - Forward (Vf) (Max) @ If: 2.5V @ 400A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 572ns
Current - Reverse Leakage @ Vr: 750µA @ 1700V
Mounting Type: Chassis Mount
Package / Case: LP4
Supplier Device Package: SP6
под заказ 1 шт
срок поставки 7-22 дня (дней)
1+ 6448.22 грн
APT2X41DC120J 6850-apt2x41dc120j-apt2x40dc120j-datasheet
APT2X41DC120J
Производитель: Microsemi Corporation
Description: DIODE MODULE 1.2KV 40A SOT227
Supplier Device Package: SOT-227
Package / Case: ISOTOP
Mounting Type: Chassis Mount
Current - Reverse Leakage @ Vr: 800µA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 40A
Current - Average Rectified (Io) (per Diode): 40A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Diode Configuration: 2 Independent
Part Status: Active
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT2X61DC120J 6855-apt2x61dc120j-apt2x60dc120j-datasheet
APT2X61DC120J
Производитель: Microsemi Corporation
Description: DIODE MODULE 1.2KV 60A SOT227
Current - Reverse Leakage @ Vr: 1.2mA @ 1200V
Reverse Recovery Time (trr): 0ns
Speed: No Recovery Time > 500mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.8V @ 60A
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Current - Average Rectified (Io) (per Diode): 60A
Voltage - DC Reverse (Vr) (Max): 1200V
Diode Type: Silicon Carbide Schottky
Diode Configuration: 2 Independent
Part Status: Active
Packaging: Bulk
под заказ 202 шт
срок поставки 7-22 дня (дней)
1+ 6105.52 грн
10+ 5706.63 грн
25+ 5507.11 грн
APTM50HM75STG index.php?option=com_docman&task=doc_download&gid=8195
APTM50HM75STG
Производитель: Microsemi Corporation
Description: MOSFET 4N-CH 500V 46A SP4
Gate Charge (Qg) (Max) @ Vgs: 123nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 357W
Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
Rds On (Max) @ Id, Vgs: 90mOhm @ 23A, 10V
Current - Continuous Drain (Id) @ 25°C: 46A
Drain to Source Voltage (Vdss): 500V
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
под заказ 40 шт
срок поставки 7-22 дня (дней)
1+ 4761.37 грн
10+ 4463.8 грн
25+ 4255.48 грн
APTM10AM02FG index.php?option=com_docman&task=doc_download&gid=8040
APTM10AM02FG
Производитель: Microsemi Corporation
Description: MOSFET 2N-CH 100V 495A SP6
Supplier Device Package: SP6
Package / Case: SP6
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Power - Max: 1250W
Gate Charge (Qg) (Max) @ Vgs: 1360nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
Vgs(th) (Max) @ Id: 4V @ 10mA
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 200A, 10V
Current - Continuous Drain (Id) @ 25°C: 495A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 2 N-Channel (Half Bridge)
Part Status: Active
Packaging: Bulk
под заказ 71 шт
срок поставки 7-22 дня (дней)
1+ 9232.02 грн
10+ 8842.08 грн
25+ 8647.02 грн
APT17F120J 6692-apt17f120j-datasheet
APT17F120J
Производитель: Microsemi Corporation
Description: MOSFET N-CH 1200V 18A SOT-227
Packaging: Tube
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 580mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 9670pF @ 25V
Power Dissipation (Max): 545W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT10M11JVRU2 APT10M11JVRU2.pdf
APT10M11JVRU2
Производитель: Microsemi Corporation
Description: MOSFET N-CH 100V 142A SOT227
Packaging: Bulk
Part Status: Active
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 11mOhm @ 71A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Power Dissipation (Max): 450W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT10035JLL 123944-apt10035jll-c-pdf
APT10035JLL
Производитель: Microsemi Corporation
Description: MOSFET N-CH 1000V 25A SOT-227
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1000V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 350mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 186nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 5185pF @ 25V
Power Dissipation (Max): 520W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT20M22JVRU2 6750-apt20m22jvru2-datasheet
APT20M22JVRU2
Производитель: Microsemi Corporation
Description: MOSFET N-CH 200V 97A SOT-227
Power Dissipation (Max): 450W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 48.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT100F50J 6559-apt100f50j-datasheet
APT100F50J
Производитель: Microsemi Corporation
Description: MOSFET N-CH 500V 103A SOT227
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 103A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 75A, 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 620nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 24600pF @ 25V
Power Dissipation (Max): 960W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: ISOTOP®
Package / Case: SOT-227-4, miniBLOC
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT60M75JFLL 6442-apt60m75jfll-datasheet
APT60M75JFLL
Производитель: Microsemi Corporation
Description: MOSFET N-CH 600V 58A SOT-227
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 595W (Tc)
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 75mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
под заказ 8 шт
срок поставки 7-22 дня (дней)
1+ 2237.86 грн
APT60M75JLL 6443-apt60m75jll-datasheet
APT60M75JLL
Производитель: Microsemi Corporation
Description: MOSFET N-CH 600V 58A SOT-227
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 195nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 595W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 8930pF @ 25V
Rds On (Max) @ Id, Vgs: 75mOhm @ 29A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM10HM19FT3G index.php?option=com_docman&task=doc_download&gid=8057
APTM10HM19FT3G
Производитель: Microsemi Corporation
Description: MOSFET 4N-CH 100V 70A SP3
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 208W
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP3
Package / Case: SP3
Mounting Type: Chassis Mount
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT33N90JCCU2 doc_details
APT33N90JCCU2
Производитель: Microsemi Corporation
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Manufacturer: Microsemi Corporation
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT10021JLL 5610-apt10021jll-datasheet
APT10021JLL
Производитель: Microsemi Corporation
Description: MOSFET N-CH 1000V 37A SOT-227
Input Capacitance (Ciss) (Max) @ Vds: 9750pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 395nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: ISOTOP®
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 694W (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 18.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
под заказ 1 шт
срок поставки 7-22 дня (дней)
1+ 3269.32 грн
APTM100H45STG index.php?option=com_docman&task=doc_download&gid=8015
APTM100H45STG
Производитель: Microsemi Corporation
Description: MOSFET 4N-CH 1000V 18A SP4
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 357W
Input Capacitance (Ciss) (Max) @ Vds: 4350pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 154nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 540mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
под заказ 8 шт
срок поставки 7-22 дня (дней)
1+ 5783.96 грн
APTM100A18FTG index.php?option=com_docman&task=doc_download&gid=7992
APTM100A18FTG
Производитель: Microsemi Corporation
Description: MOSFET 2N-CH 1000V 43A SP4
Power - Max: 780W
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A
FET Feature: Standard
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Type: 2 N-Channel (Half Bridge)
Packaging: Bulk
Part Status: Active
Supplier Device Package: SP4
Package / Case: SP4
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM10HM05FG index.php?option=com_docman&task=doc_download&gid=8054
APTM10HM05FG
Производитель: Microsemi Corporation
Description: MOSFET 4N-CH 100V 278A SP6
Vgs(th) (Max) @ Id: 4V @ 5mA
Rds On (Max) @ Id, Vgs: 5mOhm @ 125A, 10V
Current - Continuous Drain (Id) @ 25°C: 278A
Drain to Source Voltage (Vdss): 100V
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 780W
Input Capacitance (Ciss) (Max) @ Vds: 20000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 700nC @ 10V
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM20UM03FAG index.php?option=com_docman&task=doc_download&gid=8144
APTM20UM03FAG
Производитель: Microsemi Corporation
Description: MOSFET N-CH 200V 580A SP6
Input Capacitance (Ciss) (Max) @ Vds: 43300pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 840nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 15mA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 290A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 580A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Packaging: Bulk
Power Dissipation (Max): 2270W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP6
Package / Case: SP6
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM100H18FG index.php?option=com_docman&task=doc_download&gid=8009
APTM100H18FG
Производитель: Microsemi Corporation
Description: MOSFET 4N-CH 1000V 43A SP6
Input Capacitance (Ciss) (Max) @ Vds: 10400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 372nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 5mA
Rds On (Max) @ Id, Vgs: 210mOhm @ 21.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 43A
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Feature: Standard
FET Type: 4 N-Channel (H-Bridge)
Part Status: Active
Packaging: Bulk
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 780W
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM100AM90FG index.php?option=com_docman&task=doc_download&gid=7998
APTM100AM90FG
Производитель: Microsemi Corporation
Description: MOSFET 2N-CH 1000V 78A SP6
Supplier Device Package: SP6
Package / Case: SP6
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 1250W
Input Capacitance (Ciss) (Max) @ Vds: 20700pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 744nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 10mA
Current - Continuous Drain (Id) @ 25°C: 78A
Rds On (Max) @ Id, Vgs: 105mOhm @ 39A, 10V
Drain to Source Voltage (Vdss): 1000V (1kV)
FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Part Status: Active
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
2N6849 8809-lds-0009-datasheet
2N6849
Производитель: Microsemi Corporation
Description: MOSFET P-CH 100V 6.5A TO39
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 320mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34.8nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 800mW (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-39
Package / Case: TO-205AF Metal Can
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 12 шт - цена и срок поставки
2N6804 125024-lds-0113-datasheet
Производитель: Microsemi Corporation
Description: MOSFET P-CH 100V TO-204AA TO-3
Packaging: Bulk
Part Status: Obsolete
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 360mOhm @ 11A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA (TO-3)
Package / Case: TO-204AA, TO-3
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 120 шт - цена и срок поставки
2N6762 8925-lds-0111-datasheet
Производитель: Microsemi Corporation
Description: MOSFET N-CH 500V TO-3
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Drain to Source Voltage (Vdss): 500V
Technology: MOSFET (Metal Oxide)
Part Status: Obsolete
Packaging: Bulk
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA
Package / Case: TO-204AA, TO-3
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 3200 шт - цена и срок поставки
2N6760 8925-lds-0111-datasheet
Производитель: Microsemi Corporation
Description: MOSFET N-CH 400V 5.5A TO204AA
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 400V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 5.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 75W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-204AA
Package / Case: TO-204AA, TO-3
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
под заказ 1800 шт - цена и срок поставки
2N6766 77270-lds-0101-datasheet
Производитель: Microsemi Corporation
Description: MOSFET N-CH 200V TO-204AE TO-3
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs (Max): ±20V
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-3
Package / Case: TO-204AE
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT20M22JVRU3 6751-apt20m22jvru3-datasheet
APT20M22JVRU3
Производитель: Microsemi Corporation
Description: MOSFET N-CH 200V 97A SOT-227
Input Capacitance (Ciss) (Max) @ Vds: 8500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 290nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 22mOhm @ 48.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 97A (Tc)
Drain to Source Voltage (Vdss): 200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 450W (Tc)
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT10M11JVRU3 APT10M11JVRU3.pdf
APT10M11JVRU3
Производитель: Microsemi Corporation
Description: MOSFET N-CH 100V 142A SOT227
Input Capacitance (Ciss) (Max) @ Vds: 8600pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Rds On (Max) @ Id, Vgs: 11mOhm @ 71A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 142A (Tc)
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 450W (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
под заказ 3 шт
срок поставки 7-22 дня (дней)
1+ 1328.94 грн
APTM100DA33T1G index.php?option=com_docman&task=doc_download&gid=8002
Производитель: Microsemi Corporation
Description: MOSFET N-CH 1000V 23A SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
Vgs (Max): ±30V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Package / Case: SP1
Supplier Device Package: SP1
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM100SK33T1G index.php?option=com_docman&task=doc_download&gid=8019
Производитель: Microsemi Corporation
Description: MOSFET N-CH 1000V 23A SP1
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7868pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 305nC @ 10V
Package / Case: SP1
Supplier Device Package: SP1
Mounting Type: Chassis Mount
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Bulk
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM120DA56T1G
Производитель: Microsemi Corporation
Description: MOSFET N-CH 1200V 18A SP1
Drain to Source Voltage (Vdss): 1200V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Package / Case: SP1
Supplier Device Package: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 390W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM120SK56T1G APTM120SK56T1G.pdf
Производитель: Microsemi Corporation
Description: MOSFET N-CH 1200V 18A SP1
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 1200V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 672mOhm @ 14A, 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 7736pF @ 25V
Power Dissipation (Max): 390W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM60H23FT1G APTM60H23UT1G-Rev0.pdf
Производитель: Microsemi Corporation
Description: MOSFET 4N-CH 600V 20A SP1
Packaging: Bulk
Part Status: Active
FET Type: 4 N-Channel (H-Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 276mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 165nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5316pF @ 25V
Power - Max: 208W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT45M100J 7053-apt45m100j-datasheet
APT45M100J
Производитель: Microsemi Corporation
Description: MOSFET N-CH 1000V 45A SOT-227
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 18500pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 570nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Rds On (Max) @ Id, Vgs: 180mOhm @ 33A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 1000V
Technology: MOSFET (Metal Oxide)
Part Status: Active
Package / Case: SOT-227-4, miniBLOC
Supplier Device Package: SOT-227
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 960W (Tc)
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTC60AM83B1G
Производитель: Microsemi Corporation
Description: MOSFET 3N-CH 600V 36A SP1
Supplier Device Package: SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 250W
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 250nC @ 10V
Vgs(th) (Max) @ Id: 5V @ 3mA
Rds On (Max) @ Id, Vgs: 83mOhm @ 24.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A
Drain to Source Voltage (Vdss): 600V
FET Feature: Super Junction
FET Type: 3 N Channel (Phase Leg + Boost Chopper)
Part Status: Obsolete
Packaging: Tray
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTC60DSKM45T1G
Производитель: Microsemi Corporation
Description: MOSFET 2N-CH 600V 49A SP1
Packaging: Tray
Part Status: Obsolete
FET Type: 2 N Channel (Dual Buck Chopper)
FET Feature: Super Junction
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 49A
Rds On (Max) @ Id, Vgs: 45mOhm @ 24.5A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 7200pF @ 25V
Power - Max: 250W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP1
Supplier Device Package: SP1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTC80DSK15T3G
Производитель: Microsemi Corporation
Description: MOSFET 2N-CH 800V 28A SP3
Supplier Device Package: SP3
Package / Case: SP3
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 277W
Input Capacitance (Ciss) (Max) @ Vds: 4507pF @ 25V
Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
Vgs(th) (Max) @ Id: 3.9V @ 2mA
Rds On (Max) @ Id, Vgs: 150mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A
Drain to Source Voltage (Vdss): 800V
FET Feature: Standard
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APT33N90JCCU3
APT33N90JCCU3
Производитель: Microsemi Corporation
Description: MOSFET N-CH 900V 33A SOT227
Packaging: Bulk
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 290W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227
Package / Case: SOT-227-4, miniBLOC
Manufacturer: Microsemi Corporation
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
2N6766T1 77270-lds-0101-datasheet
Производитель: Microsemi Corporation
Description: MOSFET N-CH 200V 30A TO254AA
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drain to Source Voltage (Vdss): 200V
Package / Case: TO-254-3, TO-254AA (Straight Leads)
Supplier Device Package: TO-254AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 4W (Ta), 150W (Tc)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Manufacturer: Microsemi Corporation
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTC90SKM60T1G 7394-aptc90skm60t1g-datasheet
Производитель: Microsemi Corporation
Description: MOSFET N-CH 900V 59A SP1
Packaging: Tray
Part Status: Obsolete
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 900V
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 52A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 6mA
Gate Charge (Qg) (Max) @ Vgs: 540nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 13600pF @ 100V
FET Feature: Super Junction
Power Dissipation (Max): 462W (Tc)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SP1
Package / Case: SP1
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTC90DSK12T1G APTC90DSK12T1G.pdf
Производитель: Microsemi Corporation
Description: MOSFET 2N-CH 900V 30A SP1
Package / Case: SP1
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power - Max: 250W
Input Capacitance (Ciss) (Max) @ Vds: 6800pF @ 100V
Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Rds On (Max) @ Id, Vgs: 120mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A
Drain to Source Voltage (Vdss): 900V
FET Feature: Super Junction
FET Type: 2 N Channel (Dual Buck Chopper)
Part Status: Obsolete
Supplier Device Package: SP1
Packaging: Tray
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
APTM10DHM09T3G
Производитель: Microsemi Corporation
Description: MOSFET 2N-CH 100V 139A SP3
Manufacturer: Microsemi Corporation
Packaging: Bulk
Part Status: Obsolete
FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 139A
Rds On (Max) @ Id, Vgs: 10mOhm @ 69.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 2.5mA
Gate Charge (Qg) (Max) @ Vgs: 350nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9875pF @ 25V
Power - Max: 390W
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: SP3
Supplier Device Package: SP3
товар отсутствует, Вы можете сделать запрос добавив товар в корзину
Выбрать Страницу:   1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 81 82 83 84 85 86 87 88 89 90 91 92 93 94 95 96 97 98 99 100 101 102 103 104 105 106 107 108 109 110 111 112 113 114 115 116 117 118 119 120 121 122 123 124 125 126 127 128 129 130 131 132 133 134 135 136 137 138 139 140 141 142 143 144 145  Следующая Страница >> ]