Продукция производителя rectron usa

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RM12N100LD RM12N100LD Rectron USA Description: MOSFET N-CH 100V 12A TO252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 34.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26.2nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 112mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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RM8205F RM8205F Rectron USA Description: MOSFET 2 N-CH 20V 6A SOT23-6
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Supplier Device Package: SOT-23-6
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power - Max: 1.14W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 1A, 4.5V, 20mOhm @ 6A, 4.5V
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RM60P04Y RM60P04Y Rectron USA Description: MOSFET P-CHANNEL 60V 4A SOT23
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 25V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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DL4742A-T DL4742A-T dl47xxa.pdf Rectron USA Description: DIODE ZENER 20V 1W MELF
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 20V
Tolerance: ±5%
Power - Max: 1W
Current - Reverse Leakage @ Vr: 5µA @ 10mA
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB (MELF, LL41)
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MB10S MB10S mb1s-mb10s.pdf Rectron USA Description: BRIDGE RECT GLASS 1000V .5A MDS
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1kV
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 500mA
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: MD-S
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под заказ 24061722 шт - цена и срок поставки
EFM204-W EFM204-W efm201-efm207.pdf Rectron USA Description: DIODE SUPER FAST 200V 2A SMB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Current - Average Rectified (Io): 2A
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
под заказ 9000 шт
срок поставки 7-22 дня (дней)
3000+ 3.38 грн
FM302-W FM302-W fm301-fm307.pdf Rectron USA Description: DIODE GEN PURP GLASS 100V 3A SMC
Operating Temperature - Junction: 150°C
Supplier Device Package: SMC
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 100V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Average Rectified (Io): 3A
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
под заказ 6000 шт
срок поставки 7-22 дня (дней)
3000+ 3.38 грн
DRS306K DRS306K drs301k-drs307k.pdf Rectron USA Description: BRIDGE RECT GLASS 800V 3A DK3
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Reverse Leakage @ Vr: 1µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-ESIP
Supplier Device Package: D3K
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5KP190A 5KP190A 15kp.pdf Rectron USA Description: TVS DIO 5KW 190V 310V UNI R-6
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): Out of Bounds
Voltage - Clamping (Max) @ Ipp: 310V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Manufacturer: Rectron USA
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SMA3Z33A SMA3Z33A sma3z%20series.pdf Rectron USA Description: DIODE ZENER 33V 3W SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 33V
Power - Max: 3W
Impedance (Max) (Zzt): 35 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 24V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: Out of Bounds
Manufacturer: Rectron USA
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1N4753A 1N4753A 1n47xxa.pdf Rectron USA Description: DIODE ZENER 36 V 1W DO-41G
Part Status: Active
Voltage - Zener (Nom) (Vz): 36V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 50 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 27.4V
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41G
Manufacturer: Rectron USA
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под заказ 15447 шт - цена и срок поставки
MMSZ4686T MMSZ4686T mmsz4xxxt.pdf Rectron USA Description: DIODE ZENER 3.9V 300MW SOD-523
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.9V
Tolerance: ±5%
Power - Max: 300mW
Current - Reverse Leakage @ Vr: 5µA @ 2V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
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1N5231B 1N5231B 1n52xxb.pdf Rectron USA Description: DIODE ZENER 5.1 V 1W DO-35
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 5.1V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 17 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 2V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 200mA
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
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под заказ 16492 шт - цена и срок поставки
1N4728A 1N4728A 1n47xxa.pdf Rectron USA Description: DIODE ZENER 3.3V 1W DO-41G
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.3V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 100µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41G
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под заказ 20367 шт - цена и срок поставки
1N4732A 1N4732A 1n47xxa.pdf Rectron USA Description: DIODE ZENER 4.7 V 1W DO-41G
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.7V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41G
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под заказ 102693 шт - цена и срок поставки
1N4734A 1N4734A 1n47xxa.pdf Rectron USA Description: DIODE ZENER 5.6 V 1W DO-41G
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 5.6V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 5 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 3V
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41G
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под заказ 19251 шт - цена и срок поставки
BZX55C12 BZX55C12 bzx55c2v0-bzx55c75.pdf Rectron USA Description: DIODE ZENER 12V 500MW DO-34
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 12V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100nA @ 200mA
Power - Max: 500mW
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под заказ 73859 шт - цена и срок поставки
DRS206K DRS206K drs201k-drs207k.pdf Rectron USA Description: BRIDGE RECT GLASS 800V 2A DK3
Supplier Device Package: D3K
Package / Case: 4-ESIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
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1N4735A 1N4735A 1n47xxa.pdf Rectron USA Description: DIODE ZENER 6.2 V 1W DO-41G
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 2 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 3V
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41G
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под заказ 12837 шт - цена и срок поставки
1N4729A 1N4729A 1n47xxa.pdf Rectron USA Description: DIODE ZENER 3.6 V 1W DO-41G
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.6V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 100µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41G
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под заказ 106029 шт - цена и срок поставки
2RS104M 2RS104M 2rs101m-2rs107m.pdf Rectron USA Description: BRIDGE RECT 400V 2A RS-1M
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Supplier Device Package: RS-1M
Package / Case: 4-SIP, RS-1M
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 2µA @ 400V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A
Voltage - Peak Reverse (Max): 400V
Technology: Standard
Diode Type: Single Phase
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1N5337B 1N5337B 1n5333b-1n5388b.pdf Rectron USA Description: DIODE ZENER 4.7V 5W DO-15
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.7V
Tolerance: ±5%
Power - Max: 5W
Impedance (Max) (Zzt): 2 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 1V
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
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под заказ 768 шт - цена и срок поставки
BZV55C 18BSC BZV55C 18BSC bzv55cbs(bsa)(bsb)(bsc)%20series.pdf Rectron USA Description: DIODE ZENER 18V 500MW LL-34
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 18V
Power - Max: 500mW
Impedance (Max) (Zzt): 50 Ohms
Current - Reverse Leakage @ Vr: 200nA @ 13V
Voltage - Forward (Vf) (Max) @ If: 1V @ 13V
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80C
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BZV55C 18BSB BZV55C 18BSB bzv55cbs(bsa)(bsb)(bsc)%20series.pdf Rectron USA Description: DIODE ZENER 18V 500MW LL-34
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 18V
Power - Max: 500mW
Impedance (Max) (Zzt): 50 Ohms
Current - Reverse Leakage @ Vr: 200nA @ 13V
Voltage - Forward (Vf) (Max) @ If: 1V @ 13V
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80C
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RM120N30T2 RM120N30T2 Rectron USA Description: MOSFET N-CH 30V 120A TO220-3
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 50V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 120W (Ta)
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1N4002W 1N4002W 1n4001w-1n4007w.pdf Rectron USA Description: DIODE GEN 1A 100V SOD-123F
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
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P6KE39CA P6KE39CA p6ke.pdf Rectron USA Description: TVS DIODE 39VWM 53.9VC DO15
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 39V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
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под заказ 24114 шт - цена и срок поставки
RS406L RS406L rs401l-rs407l.pdf Rectron USA Description: BRIDGE RECT GLASS 800V 4A RS-4L
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 4A
Current - Reverse Leakage @ Vr: 2µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, RS-4L
Supplier Device Package: RS-4L
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 4A
Current - Reverse Leakage @ Vr: 2µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, RS-4L
Supplier Device Package: RS-4L
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под заказ 85000 шт - цена и срок поставки
1.5KE36A-T 1.5KE36A-T 1.5ke.pdf Rectron USA Description: TVS DIODE 30.8VWM 49.9VC 1.5KE
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Voltage - Reverse Standoff (Typ): 30.8V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: 1.5KE
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 30.1A
под заказ 100800 шт
срок поставки 7-22 дня (дней)
1200+ 4.23 грн
MB4S-W MB4S-W mb1s-mb10s.pdf Rectron USA Description: BRIDGE RECTIFIER 400V .5 A
Supplier Device Package: MD-S
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - Peak Reverse (Max): 400V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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LL4148-T LL4148-T ll4148.pdf Rectron USA Description: DIODE GEN PURP 100V 200MA LL34
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: LL-34
Operating Temperature - Junction: 175°C (Max)
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DB107S-T-Z DB107S-T-Z db101s-db107s.pdf Rectron USA Description: BRIDGE RECTIFIER 1A 1000V DB-S
Supplier Device Package: DB-S
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - Peak Reverse (Max): 1kV
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1N5406-F 1N5406-F 1n5400-1n5408.pdf Rectron USA Description: DIODE GEN PURP 600V 3A DO-201AD
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
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1N4004-F 1N4004-F 1n4001-1n4007.pdf Rectron USA Description: DIODE GEN PU 400V 1A DO-41 AMMO
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
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1N4004-T 1N4004-T 1n4001-1n4007.pdf Rectron USA Description: DIODE GEN PURP 400V 1A DO-41
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 200nA @ 1000V
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
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под заказ 909590 шт - цена и срок поставки
R3000 r2500-r5000.pdf техническая информация Rectron USA Description: DIODE GEN PURP 3000V 200A DO15
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 3000V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 4V @ 200mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 3000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-15
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
под заказ 15 шт - цена и срок поставки
20000+ 4.65 грн
SD05C SD05C sd05c-sd24c.pdf Rectron USA Description: ESD PROTECTION DIODE SOD-323
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 5V (Max)
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14.5V
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Power - Peak Pulse: 350W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz (Max)
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
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под заказ 444500 шт - цена и срок поставки
1N5817-B 1N5817-B 1n5817-1n5819.pdf Rectron USA Description: DIODE SCHOKKTY 20V 1A DO-41
Operating Temperature - Junction: 150°C
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200µA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Manufacturer: Rectron USA
Packaging: Bulk
Part Status: Active
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FR302-B FR302-B fr301-fr307p.pdf Rectron USA Description: DIODE FAST 100V 3A DO-201
Manufacturer: Rectron USA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
под заказ 4000 шт
срок поставки 7-22 дня (дней)
2000+ 3.76 грн
FR302-T FR302-T fr301-fr307p.pdf Rectron USA Description: DIODE FAST 100V 3A DO-201
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
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RM18P100HDE Rectron USA Description: MOSFET P-CH 100V 18A TO263-2
FET Type: P-Channel
Power Dissipation (Max): 70W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 15V
Part Status: Active
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
8000+ 14.37 грн
1N5404G-T 1N5404G-T 1n5400g-1n5408g.pdf Rectron USA Description: DIODE GEN PURP GLASS 400V 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Current - Reverse Leakage @ Vr: 500nA @ 400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 980mV @ 3A
Current - Average Rectified (Io): 3A
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под заказ 2039 шт - цена и срок поставки
RM75N60T2 RM75N60T2 Rectron USA Description: MOSFET N-CHANNEL 60V 75A TO220-3
Manufacturer: Rectron USA
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 50V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
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RM75N60LD RM75N60LD Rectron USA Description: MOSFET N-CHANNEL 60V 75A TO252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 25V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
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RM60N30DF RM60N30DF Rectron USA Description: MOSFET N-CHANNEL 30V 58A 8DFN
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1844pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
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RM45N60DF RM45N60DF Rectron USA Description: MOSFET N-CHANNEL 60V 45A 8DFN
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 30V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 30V
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Package / Case: 8-PowerVDFN
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RM45N600T7 RM45N600T7 Rectron USA Description: MOSFET N-CH 600V 44.5A TO247
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 431W
Input Capacitance (Ciss) (Max) @ Vds: 2808pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 15.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer: Rectron USA
Package / Case: TO-247-3
Current - Continuous Drain (Id) @ 25°C: 44.5A (Tj)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
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2N7002K36 2N7002K36 Rectron USA Description: MOSFET 2 N-CH 60V 250MA SOT23-6
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power - Max: 350mW (Ta)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6
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2N7002KD1 2N7002KD1 Rectron USA Description: MOSFET N-CH 60V 350MA DFN1006-3
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 25V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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1SMAF2EZ10 1SMAF2EZ10 1smaf2ez%20series.pdf Rectron USA Description: DIODE ZENER 10V 2W SMAF
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 10V
Power - Max: 2W
Impedance (Max) (Zzt): 3.5 Ohms
Current - Reverse Leakage @ Vr: 50µA @ 7.6V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 0.2mA
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAF
Manufacturer: Rectron USA
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RM2020ES9 RM2020ES9 Rectron USA Description: MOSFET N&P-CH 20V SOT363
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Supplier Device Package: SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 150mW (Ta), 800mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V, 120pF @ 16V
Gate Charge (Qg) (Max) @ Vgs: 1.8pC @ 10V, 750pC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, 380mOhm @ 650mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 800mA (Ta)
Drain to Source Voltage (Vdss): 20V
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1N4007-F 1N4007-F 1n4001-1n4007.pdf Rectron USA Description: DIODE GEN PURP 1000V 1A AMMO
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
под заказ 30000 шт
срок поставки 7-22 дня (дней)
3000+ 0.93 грн
1N4007G-T 1N4007G-T 1n4001g-1n4007g.pdf Rectron USA Description: DIODE GEN PURP GLASS 1000V 1A
Operating Temperature - Junction: -65°C ~ 175°C
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 1000V
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
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под заказ 364202 шт - цена и срок поставки
1N4001-T 1N4001-T 1n4001-1n4007.pdf Rectron USA Description: DIODE GEN PURP 50V 1A DO-41
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Packaging: Tape & Reel (TR)
Part Status: Active
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под заказ 258250 шт - цена и срок поставки
P4KE18-T P4KE18-T p4ke.pdf Rectron USA Description: TVS DIODE 14.5V 26.5 DO-41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 15.1A
Voltage - Clamping (Max) @ Ipp: 26.5V
Voltage - Breakdown (Min): 16.2V
Voltage - Reverse Standoff (Typ): 14.5V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-41
под заказ 250000 шт
срок поставки 7-22 дня (дней)
5000+ 2.03 грн
HER508-F HER508-F her501-her508.pdf Rectron USA Description: DIODE HIGH EFF 1000V 5A DO-201
Operating Temperature - Junction: 150°C
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Mounting Type: Through Hole
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Current - Average Rectified (Io): 5A
Part Status: Active
Diode Type: Standard
Packaging: Tape & Reel (TR)
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1S40-T 1s20-1s100.pdf Rectron USA Description: DIODE SCHOKKTY 40V 1A R-1
Operating Temperature - Junction: 150°C
Supplier Device Package: R-1
Package / Case: R-1, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Current - Average Rectified (Io): 1A
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
под заказ 10000 шт
срок поставки 7-22 дня (дней)
5000+ 2.32 грн
10A6-T 10a05-10a10.pdf Rectron USA Description: DIODE GEN PURP 600V 6A R-6
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 135pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
под заказ 800 шт
срок поставки 7-22 дня (дней)
800+ 7.18 грн
1N5257B 1N5257B 1n52xxb.pdf Rectron USA Description: DIODE ZENER 33 V 1W DO-35
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 58 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 25V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 200mA
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
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под заказ 34771 шт - цена и срок поставки
MB10F MB10F mb1f-mb10f.pdf Rectron USA Description: BRIDGE RECT GLASS 1000V .8A MB-F
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 800mA
Current - Average Rectified (Io): 800mA
Voltage - Peak Reverse (Max): 1kV
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Supplier Device Package: MB-F
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 1000V
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под заказ 2452250 шт - цена и срок поставки
RM80N60LD RM80N60LD Rectron USA Description: MOSFET N-CHANNEL 60V 80A TO252-2
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 60V
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RM80N60DF RM80N60DF Rectron USA Description: MOSFET N-CHANNEL 60V 80A 8DFN
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 85W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 30V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
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RM180N60T2 RM180N60T2 Rectron USA Description: MOSFET N-CH 60V 180A TO220-3
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 220W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
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RM2A8N60S4 Rectron USA Description: MOSFET N-CH 60V 2.8A SOT223-3
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 25V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drain to Source Voltage (Vdss): 60V
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
30000+ 4.65 грн
P6KE68CA-T P6KE68CA-T p6ke.pdf Rectron USA Description: TVS DIODE 58.1VWM 92VC DO15
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Bidirectional Channels: 1
Part Status: Active
Type: Zener
Supplier Device Package: DO-15
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
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1N4004G-T 1N4004G-T 1n4001g-1n4007g.pdf Rectron USA Description: DIODE GEN PU GLASS 400V 1A DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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под заказ 41448 шт - цена и срок поставки
2N7002K 2N7002K 2N7002K-D.pdf 2n7002k-d.pdf SOT232N70S702K.pdf Rectron USA Description: MOSFET N-CHANNEL 60V 300MA SOT23
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 25V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power Dissipation (Max): 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
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под заказ 686255 шт - цена и срок поставки
2N7002KA 2N7002KA Rectron USA Description: MOSFET N-CHANNEL 60V 115MA SOT23
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power Dissipation (Max): 225mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
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2N7002KS6 2N7002KS6 Rectron USA Description: MOSFET 2 N-CH 60V 250MA SOT363
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA,10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power - Max: 350mW (Ta)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
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1N4003-T 1N4003-T 1n4001-1n4007.pdf Rectron USA Description: DIODE GEN PURP 200V 1A DO-41
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
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под заказ 291733 шт - цена и срок поставки
RM12N650LD RM12N650LD Rectron USA Description: MOSFET N-CH 650V 11.5A TO252-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Technology: MOSFET (Metal Oxide)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 101W (Tc)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 50V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
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RM12N650IP RM12N650IP Rectron USA Description: MOSFET N-CH 650V 11.5A TO251
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 101W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 50V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
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RM12N650T2 RM12N650T2 Rectron USA Description: MOSFET N-CH 650V 11.5A TO220-3
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 50V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
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RM12N650TI RM12N650TI Rectron USA Description: MOSFET N-CH 650V 11.5A TO220F
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 32.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 25V
Vgs(th) (Max) @ Id: 4V @ 250µA
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RM6N800LD RM6N800LD Rectron USA Description: MOSFET N-CHANNEL 800V 6A TO252-2
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 50V
Power Dissipation (Max): 98W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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RM6N800IP RM6N800IP Rectron USA Description: MOSFET N-CHANNEL 800V 6A TO251
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 50V
Power Dissipation (Max): 98W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251
Package / Case: TO-251-3 Stub Leads, IPak
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RM6N800HD RM6N800HD Rectron USA Description: MOSFET N-CHANNEL 800V 6A TO263-2
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 50V
Power Dissipation (Max): 98W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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RM6N800TI RM6N800TI Rectron USA Description: MOSFET N-CHANNEL 800V 6A TO220F
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 50V
Power Dissipation (Max): 32.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
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RM6N800T2 RM6N800T2 Rectron USA Description: MOSFET N-CHANNEL 800V 6A TO220-3
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 50V
Power Dissipation (Max): 98W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
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RM40N600T7 RM40N600T7 Rectron USA Description: IGBT TRENCH FS 600V 40A TO247-3
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 151ns
Test Condition: 400V, 40A, 10Ohm, 15V
Td (on/off) @ 25°C: 21ns/203ns
Gate Charge: 149nC
Input Type: Standard
Switching Energy: 1.12mJ (on), 610µJ (off)
Power - Max: 306W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 160A
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
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RM4N650IP Rectron USA Description: MOSFET N-CHANNEL 650V 4A TO251
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Part Status: Active
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 20V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
4000+ 13.94 грн
RM4N650LD Rectron USA Description: MOSFET N-CHANNEL 650V 4A TO252-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 25V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
25000+ 13.94 грн
RM4N650TI Rectron USA Description: MOSFET N-CHANNEL 650V 4A TO220F
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 50V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 28.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 50V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
5000+ 17.75 грн
RM4N650T2 Rectron USA Description: MOSFET N-CHANNEL 650V 4A TO220-3
Package / Case: TO-220-3
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 15V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
5000+ 19.02 грн
RM47N600T7 RM47N600T7 Rectron USA Description: MOSFET N-CHANNEL 600V 47A TO247
Power Dissipation (Max): 417W
Input Capacitance (Ciss) (Max) @ Vds: 3111.9pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 87.967nC @ 30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 81mOhm @ 15.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
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RM17N800TI RM17N800TI Rectron USA Description: MOSFET N-CHANNEL 800V 17A TO220F
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
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RM17N800T2 RM17N800T2 Rectron USA Description: MOSFET N-CH 800V 17A TO220-3
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V
Power Dissipation (Max): 260W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
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RM17N800HD RM17N800HD Rectron USA Description: MOSFET N-CH 800V 17A TO263-2
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V
Power Dissipation (Max): 260W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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RM7N600IP Rectron USA Description: MOSFET N-CHANNEL 600V 7A TO251
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 63W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 580mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Tube
Part Status: Active
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
4000+ 23.24 грн
RM7N600LD Rectron USA Description: MOSFET N-CHANNEL 600V 7A TO252-2
Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 25V
Rds On (Max) @ Id, Vgs: 580mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Tube
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 63W (Tc)
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
4000+ 24.51 грн
RM20N60LD Rectron USA Description: MOSFET N-CHANNEL 60V 20A TO252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 50V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 60V
Packaging: Tape & Reel (TR)
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
25000+ 5.92 грн
RM120N60T2 RM120N60T2 Rectron USA Description: MOSFET N-CH 60V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 30V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 180W (Tc)
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1N5368B 1N5368B 1n5333b-1n5388b.pdf техническая информация Rectron USA Description: DIODE ZENER 47V 5W DO-15
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 47V
Tolerance: ±5%
Power - Max: 5W
Impedance (Max) (Zzt): 25 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 35.8V
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
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под заказ 1233 шт - цена и срок поставки
RM5N60S4 RM5N60S4 Rectron USA Description: MOSFET N-CHANNEL 60V 5A SOT223-3
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 50V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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RM50N60IP RM50N60IP Rectron USA Description: MOSFET N-CHANNEL 60V 50A TO251
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 80W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 75V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
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RM50N60T2 RM50N60T2 Rectron USA Description: MOSFET N-CHANNEL 60V 50A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 30V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 85W (Tc)
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RM50N60TI RM50N60TI Rectron USA Description: MOSFET N-CHANNEL 60V 50A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 30V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 85W (Ta)
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RM50N60LD RM50N60LD Rectron USA Description: MOSFET N-CHANNEL 60V 50A TO252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 85W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 30V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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RM50N60DF RM50N60DF Rectron USA Description: MOSFET N-CHANNEL 60V 50A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90.3nC @ 50V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Package / Case: 8-PowerVDFN
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 75W (Tc)
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RM150N60T2 RM150N60T2 Rectron USA Description: MOSFET N-CH 60V 150A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 163nC @ 25V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 220W (Tc)
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RM12N100LD
RM12N100LD
Производитель: Rectron USA
Description: MOSFET N-CH 100V 12A TO252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 34.7W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1535pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26.2nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 112mOhm @ 10A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
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RM8205F
RM8205F
Производитель: Rectron USA
Description: MOSFET 2 N-CH 20V 6A SOT23-6
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drain to Source Voltage (Vdss): 20V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Supplier Device Package: SOT-23-6
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power - Max: 1.14W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 1035pF @ 20V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Rds On (Max) @ Id, Vgs: 17mOhm @ 1A, 4.5V, 20mOhm @ 6A, 4.5V
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RM60P04Y
RM60P04Y
Производитель: Rectron USA
Description: MOSFET P-CHANNEL 60V 4A SOT23
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 25V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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DL4742A-T dl47xxa.pdf
DL4742A-T
Производитель: Rectron USA
Description: DIODE ZENER 20V 1W MELF
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 20V
Tolerance: ±5%
Power - Max: 1W
Current - Reverse Leakage @ Vr: 5µA @ 10mA
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB (MELF, LL41)
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MB10S mb1s-mb10s.pdf
MB10S
Производитель: Rectron USA
Description: BRIDGE RECT GLASS 1000V .5A MDS
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 1kV
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 500mA
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-SMD, Gull Wing
Supplier Device Package: MD-S
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под заказ 24061722 шт - цена и срок поставки
EFM204-W efm201-efm207.pdf
EFM204-W
Производитель: Rectron USA
Description: DIODE SUPER FAST 200V 2A SMB
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AA (SMB)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 200V
Reverse Recovery Time (trr): 35ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 950mV @ 2A
Current - Average Rectified (Io): 2A
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
под заказ 9000 шт
срок поставки 7-22 дня (дней)
3000+ 3.38 грн
FM302-W fm301-fm307.pdf
FM302-W
Производитель: Rectron USA
Description: DIODE GEN PURP GLASS 100V 3A SMC
Operating Temperature - Junction: 150°C
Supplier Device Package: SMC
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 1µA @ 100V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Current - Average Rectified (Io): 3A
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
под заказ 6000 шт
срок поставки 7-22 дня (дней)
3000+ 3.38 грн
DRS306K drs301k-drs307k.pdf
DRS306K
Производитель: Rectron USA
Description: BRIDGE RECT GLASS 800V 3A DK3
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Current - Reverse Leakage @ Vr: 1µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-ESIP
Supplier Device Package: D3K
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5KP190A 15kp.pdf
5KP190A
Производитель: Rectron USA
Description: TVS DIO 5KW 190V 310V UNI R-6
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Unidirectional Channels: 1
Voltage - Reverse Standoff (Typ): Out of Bounds
Voltage - Clamping (Max) @ Ipp: 310V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Manufacturer: Rectron USA
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SMA3Z33A sma3z%20series.pdf
SMA3Z33A
Производитель: Rectron USA
Description: DIODE ZENER 33V 3W SMA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 33V
Power - Max: 3W
Impedance (Max) (Zzt): 35 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 24V
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: Out of Bounds
Manufacturer: Rectron USA
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1N4753A 1n47xxa.pdf
1N4753A
Производитель: Rectron USA
Description: DIODE ZENER 36 V 1W DO-41G
Part Status: Active
Voltage - Zener (Nom) (Vz): 36V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 50 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 27.4V
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41G
Manufacturer: Rectron USA
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под заказ 15447 шт - цена и срок поставки
MMSZ4686T mmsz4xxxt.pdf
MMSZ4686T
Производитель: Rectron USA
Description: DIODE ZENER 3.9V 300MW SOD-523
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.9V
Tolerance: ±5%
Power - Max: 300mW
Current - Reverse Leakage @ Vr: 5µA @ 2V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 10mA
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
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1N5231B 1n52xxb.pdf
1N5231B
Производитель: Rectron USA
Description: DIODE ZENER 5.1 V 1W DO-35
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 5.1V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 17 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 2V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 200mA
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
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под заказ 16492 шт - цена и срок поставки
1N4728A 1n47xxa.pdf
1N4728A
Производитель: Rectron USA
Description: DIODE ZENER 3.3V 1W DO-41G
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.3V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 100µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41G
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под заказ 20367 шт - цена и срок поставки
1N4732A 1n47xxa.pdf
1N4732A
Производитель: Rectron USA
Description: DIODE ZENER 4.7 V 1W DO-41G
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.7V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 8 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41G
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под заказ 102693 шт - цена и срок поставки
1N4734A 1n47xxa.pdf
1N4734A
Производитель: Rectron USA
Description: DIODE ZENER 5.6 V 1W DO-41G
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 5.6V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 5 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 3V
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41G
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под заказ 19251 шт - цена и срок поставки
BZX55C12 bzx55c2v0-bzx55c75.pdf
BZX55C12
Производитель: Rectron USA
Description: DIODE ZENER 12V 500MW DO-34
Tolerance: ±5%
Voltage - Zener (Nom) (Vz): 12V
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-35
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Current - Reverse Leakage @ Vr: 100nA @ 200mA
Power - Max: 500mW
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под заказ 73859 шт - цена и срок поставки
DRS206K drs201k-drs207k.pdf
DRS206K
Производитель: Rectron USA
Description: BRIDGE RECT GLASS 800V 2A DK3
Supplier Device Package: D3K
Package / Case: 4-ESIP
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 800V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A
Voltage - Peak Reverse (Max): 800V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
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1N4735A 1n47xxa.pdf
1N4735A
Производитель: Rectron USA
Description: DIODE ZENER 6.2 V 1W DO-41G
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Part Status: Active
Voltage - Zener (Nom) (Vz): 6.2V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 2 Ohms
Current - Reverse Leakage @ Vr: 10µA @ 3V
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41G
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под заказ 12837 шт - цена и срок поставки
1N4729A 1n47xxa.pdf
1N4729A
Производитель: Rectron USA
Description: DIODE ZENER 3.6 V 1W DO-41G
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 3.6V
Tolerance: ±5%
Power - Max: 1W
Impedance (Max) (Zzt): 10 Ohms
Current - Reverse Leakage @ Vr: 100µA @ 1V
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41G
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под заказ 106029 шт - цена и срок поставки
2RS104M 2rs101m-2rs107m.pdf
2RS104M
Производитель: Rectron USA
Description: BRIDGE RECT 400V 2A RS-1M
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Supplier Device Package: RS-1M
Package / Case: 4-SIP, RS-1M
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 2µA @ 400V
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 2A
Current - Average Rectified (Io): 2A
Voltage - Peak Reverse (Max): 400V
Technology: Standard
Diode Type: Single Phase
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1N5337B 1n5333b-1n5388b.pdf
1N5337B
Производитель: Rectron USA
Description: DIODE ZENER 4.7V 5W DO-15
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 4.7V
Tolerance: ±5%
Power - Max: 5W
Impedance (Max) (Zzt): 2 Ohms
Current - Reverse Leakage @ Vr: 5µA @ 1V
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
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под заказ 768 шт - цена и срок поставки
BZV55C 18BSC bzv55cbs(bsa)(bsb)(bsc)%20series.pdf
BZV55C 18BSC
Производитель: Rectron USA
Description: DIODE ZENER 18V 500MW LL-34
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 18V
Power - Max: 500mW
Impedance (Max) (Zzt): 50 Ohms
Current - Reverse Leakage @ Vr: 200nA @ 13V
Voltage - Forward (Vf) (Max) @ If: 1V @ 13V
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80C
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BZV55C 18BSB bzv55cbs(bsa)(bsb)(bsc)%20series.pdf
BZV55C 18BSB
Производитель: Rectron USA
Description: DIODE ZENER 18V 500MW LL-34
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 18V
Power - Max: 500mW
Impedance (Max) (Zzt): 50 Ohms
Current - Reverse Leakage @ Vr: 200nA @ 13V
Voltage - Forward (Vf) (Max) @ If: 1V @ 13V
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: SOD-80C
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RM120N30T2
RM120N30T2
Производитель: Rectron USA
Description: MOSFET N-CH 30V 120A TO220-3
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Input Capacitance (Ciss) (Max) @ Vds: 3550pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 48nC @ 50V
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 120W (Ta)
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1N4002W 1n4001w-1n4007w.pdf
1N4002W
Производитель: Rectron USA
Description: DIODE GEN 1A 100V SOD-123F
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C
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P6KE39CA p6ke.pdf
P6KE39CA
Производитель: Rectron USA
Description: TVS DIODE 39VWM 53.9VC DO15
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 39V
Voltage - Clamping (Max) @ Ipp: 53.9V
Power - Peak Pulse: 600W
Power Line Protection: No
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
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под заказ 24114 шт - цена и срок поставки
RS406L rs401l-rs407l.pdf
RS406L
Производитель: Rectron USA
Description: BRIDGE RECT GLASS 800V 4A RS-4L
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 4A
Current - Reverse Leakage @ Vr: 2µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, RS-4L
Supplier Device Package: RS-4L
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
Diode Type: Single Phase
Technology: Standard
Voltage - Peak Reverse (Max): 800V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 4A
Current - Reverse Leakage @ Vr: 2µA @ 800V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 4-SIP, RS-4L
Supplier Device Package: RS-4L
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под заказ 85000 шт - цена и срок поставки
1.5KE36A-T 1.5ke.pdf
1.5KE36A-T
Производитель: Rectron USA
Description: TVS DIODE 30.8VWM 49.9VC 1.5KE
Voltage - Clamping (Max) @ Ipp: 49.9V
Voltage - Breakdown (Min): 34.2V
Voltage - Reverse Standoff (Typ): 30.8V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: 1.5KE
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 30.1A
под заказ 100800 шт
срок поставки 7-22 дня (дней)
1200+ 4.23 грн
MB4S-W mb1s-mb10s.pdf
MB4S-W
Производитель: Rectron USA
Description: BRIDGE RECTIFIER 400V .5 A
Supplier Device Package: MD-S
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 5µA @ 400V
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 500mA
Current - Average Rectified (Io): 500mA
Voltage - Peak Reverse (Max): 400V
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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LL4148-T ll4148.pdf
LL4148-T
Производитель: Rectron USA
Description: DIODE GEN PURP 100V 200MA LL34
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 10mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 5µA @ 75V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AC, MINI-MELF, SOD-80
Supplier Device Package: LL-34
Operating Temperature - Junction: 175°C (Max)
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DB107S-T-Z db101s-db107s.pdf
DB107S-T-Z
Производитель: Rectron USA
Description: BRIDGE RECTIFIER 1A 1000V DB-S
Supplier Device Package: DB-S
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - Peak Reverse (Max): 1kV
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1N5406-F 1n5400-1n5408.pdf
1N5406-F
Производитель: Rectron USA
Description: DIODE GEN PURP 600V 3A DO-201AD
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
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1N4004-F 1n4001-1n4007.pdf
1N4004-F
Производитель: Rectron USA
Description: DIODE GEN PU 400V 1A DO-41 AMMO
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
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1N4004-T 1n4001-1n4007.pdf
1N4004-T
Производитель: Rectron USA
Description: DIODE GEN PURP 400V 1A DO-41
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 200nA @ 1000V
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
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под заказ 909590 шт - цена и срок поставки
R3000 техническая информация r2500-r5000.pdf
Производитель: Rectron USA
Description: DIODE GEN PURP 3000V 200A DO15
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 5µA @ 3000V
Speed: Small Signal =< 200mA (Io), Any Speed
Voltage - Forward (Vf) (Max) @ If: 4V @ 200mA
Current - Average Rectified (Io): 200mA
Voltage - DC Reverse (Vr) (Max): 3000V
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-15
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
под заказ 15 шт - цена и срок поставки
20000+ 4.65 грн
SD05C sd05c-sd24c.pdf
SD05C
Производитель: Rectron USA
Description: ESD PROTECTION DIODE SOD-323
Packaging: Tape & Reel (TR)
Part Status: Active
Type: Zener
Bidirectional Channels: 1
Voltage - Reverse Standoff (Typ): 5V (Max)
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 14.5V
Current - Peak Pulse (10/1000µs): 24A (8/20µs)
Power - Peak Pulse: 350W
Power Line Protection: No
Applications: General Purpose
Capacitance @ Frequency: 200pF @ 1MHz (Max)
Operating Temperature: -55°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
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под заказ 444500 шт - цена и срок поставки
1N5817-B 1n5817-1n5819.pdf
1N5817-B
Производитель: Rectron USA
Description: DIODE SCHOKKTY 20V 1A DO-41
Operating Temperature - Junction: 150°C
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200µA @ 20V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 20V
Diode Type: Schottky
Manufacturer: Rectron USA
Packaging: Bulk
Part Status: Active
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FR302-B fr301-fr307p.pdf
FR302-B
Производитель: Rectron USA
Description: DIODE FAST 100V 3A DO-201
Manufacturer: Rectron USA
Packaging: Bulk
Part Status: Active
Diode Type: Standard
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
под заказ 4000 шт
срок поставки 7-22 дня (дней)
2000+ 3.76 грн
FR302-T fr301-fr307p.pdf
FR302-T
Производитель: Rectron USA
Description: DIODE FAST 100V 3A DO-201
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 10µA @ 100V
Reverse Recovery Time (trr): 150ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Current - Average Rectified (Io): 3A
Voltage - DC Reverse (Vr) (Max): 100V
Diode Type: Standard
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
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RM18P100HDE
Производитель: Rectron USA
Description: MOSFET P-CH 100V 18A TO263-2
FET Type: P-Channel
Power Dissipation (Max): 70W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 61nC @ 15V
Part Status: Active
Packaging: Tape & Reel (TR)
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 16A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
8000+ 14.37 грн
1N5404G-T 1n5400g-1n5408g.pdf
1N5404G-T
Производитель: Rectron USA
Description: DIODE GEN PURP GLASS 400V 3A
Voltage - DC Reverse (Vr) (Max): 400V
Diode Type: Standard
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-201AD
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Current - Reverse Leakage @ Vr: 500nA @ 400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 980mV @ 3A
Current - Average Rectified (Io): 3A
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под заказ 2039 шт - цена и срок поставки
RM75N60T2
RM75N60T2
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 60V 75A TO220-3
Manufacturer: Rectron USA
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 50V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
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RM75N60LD
RM75N60LD
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 60V 75A TO252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 25V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
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RM60N30DF
RM60N30DF
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 30V 58A 8DFN
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1844pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 17.6nC @ 15V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 30A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
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RM45N60DF
RM45N60DF
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 60V 45A 8DFN
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 58nC @ 30V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 2180pF @ 30V
Power Dissipation (Max): 60W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (5x6)
Package / Case: 8-PowerVDFN
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RM45N600T7
RM45N600T7
Производитель: Rectron USA
Description: MOSFET N-CH 600V 44.5A TO247
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 431W
Input Capacitance (Ciss) (Max) @ Vds: 2808pF @ 100V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 69nC @ 100V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 90mOhm @ 15.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer: Rectron USA
Package / Case: TO-247-3
Current - Continuous Drain (Id) @ 25°C: 44.5A (Tj)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
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2N7002K36
2N7002K36
Производитель: Rectron USA
Description: MOSFET 2 N-CH 60V 250MA SOT23-6
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power - Max: 350mW (Ta)
Mounting Type: Surface Mount
Package / Case: SOT-23-6
Supplier Device Package: SOT-23-6
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2N7002KD1
2N7002KD1
Производитель: Rectron USA
Description: MOSFET N-CH 60V 350MA DFN1006-3
Package / Case: SC-101, SOT-883
Supplier Device Package: DFN1006-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 350mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 25V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Rds On (Max) @ Id, Vgs: 2.8Ohm @ 200mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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1SMAF2EZ10 1smaf2ez%20series.pdf
1SMAF2EZ10
Производитель: Rectron USA
Description: DIODE ZENER 10V 2W SMAF
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 10V
Power - Max: 2W
Impedance (Max) (Zzt): 3.5 Ohms
Current - Reverse Leakage @ Vr: 50µA @ 7.6V
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 0.2mA
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAF
Manufacturer: Rectron USA
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RM2020ES9
RM2020ES9
Производитель: Rectron USA
Description: MOSFET N&P-CH 20V SOT363
FET Feature: Standard
FET Type: N and P-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Supplier Device Package: SOT-363
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 150mW (Ta), 800mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 87pF @ 10V, 120pF @ 16V
Gate Charge (Qg) (Max) @ Vgs: 1.8pC @ 10V, 750pC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 1.1V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V, 380mOhm @ 650mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta), 800mA (Ta)
Drain to Source Voltage (Vdss): 20V
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1N4007-F 1n4001-1n4007.pdf
1N4007-F
Производитель: Rectron USA
Description: DIODE GEN PURP 1000V 1A AMMO
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
под заказ 30000 шт
срок поставки 7-22 дня (дней)
3000+ 0.93 грн
1N4007G-T 1n4001g-1n4007g.pdf
1N4007G-T
Производитель: Rectron USA
Description: DIODE GEN PURP GLASS 1000V 1A
Operating Temperature - Junction: -65°C ~ 175°C
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 1000V
Part Status: Active
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
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под заказ 364202 шт - цена и срок поставки
1N4001-T 1n4001-1n4007.pdf
1N4001-T
Производитель: Rectron USA
Description: DIODE GEN PURP 50V 1A DO-41
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
Diode Type: Standard
Packaging: Tape & Reel (TR)
Part Status: Active
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под заказ 258250 шт - цена и срок поставки
P4KE18-T p4ke.pdf
P4KE18-T
Производитель: Rectron USA
Description: TVS DIODE 14.5V 26.5 DO-41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 400W
Current - Peak Pulse (10/1000µs): 15.1A
Voltage - Clamping (Max) @ Ipp: 26.5V
Voltage - Breakdown (Min): 16.2V
Voltage - Reverse Standoff (Typ): 14.5V
Unidirectional Channels: 1
Type: Zener
Part Status: Active
Packaging: Tape & Reel (TR)
Supplier Device Package: DO-41
под заказ 250000 шт
срок поставки 7-22 дня (дней)
5000+ 2.03 грн
HER508-F her501-her508.pdf
HER508-F
Производитель: Rectron USA
Description: DIODE HIGH EFF 1000V 5A DO-201
Operating Temperature - Junction: 150°C
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Mounting Type: Through Hole
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 500nA @ 1000V
Reverse Recovery Time (trr): 75ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Current - Average Rectified (Io): 5A
Part Status: Active
Diode Type: Standard
Packaging: Tape & Reel (TR)
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1S40-T 1s20-1s100.pdf
Производитель: Rectron USA
Description: DIODE SCHOKKTY 40V 1A R-1
Operating Temperature - Junction: 150°C
Supplier Device Package: R-1
Package / Case: R-1, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200µA @ 40V
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 550mV @ 1A
Current - Average Rectified (Io): 1A
Diode Type: Schottky
Part Status: Active
Packaging: Tape & Reel (TR)
под заказ 10000 шт
срок поставки 7-22 дня (дней)
5000+ 2.32 грн
10A6-T 10a05-10a10.pdf
Производитель: Rectron USA
Description: DIODE GEN PURP 600V 6A R-6
Packaging: Tape & Reel (TR)
Part Status: Active
Diode Type: Standard
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
Speed: Standard Recovery >500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 135pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C
под заказ 800 шт
срок поставки 7-22 дня (дней)
800+ 7.18 грн
1N5257B 1n52xxb.pdf
1N5257B
Производитель: Rectron USA
Description: DIODE ZENER 33 V 1W DO-35
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 33V
Tolerance: ±5%
Power - Max: 500mW
Impedance (Max) (Zzt): 58 Ohms
Current - Reverse Leakage @ Vr: 100nA @ 25V
Voltage - Forward (Vf) (Max) @ If: 900mV @ 200mA
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
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под заказ 34771 шт - цена и срок поставки
MB10F mb1f-mb10f.pdf
MB10F
Производитель: Rectron USA
Description: BRIDGE RECT GLASS 1000V .8A MB-F
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 800mA
Current - Average Rectified (Io): 800mA
Voltage - Peak Reverse (Max): 1kV
Technology: Standard
Diode Type: Single Phase
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Supplier Device Package: MB-F
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Reverse Leakage @ Vr: 1µA @ 1000V
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под заказ 2452250 шт - цена и срок поставки
RM80N60LD
RM80N60LD
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 60V 80A TO252-2
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 110W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90nC @ 30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drain to Source Voltage (Vdss): 60V
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RM80N60DF
RM80N60DF
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 60V 80A 8DFN
Package / Case: 8-PowerVDFN
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 85W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 30V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 40A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
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RM180N60T2
RM180N60T2
Производитель: Rectron USA
Description: MOSFET N-CH 60V 180A TO220-3
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 220W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 70nC @ 30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
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RM2A8N60S4
Производитель: Rectron USA
Description: MOSFET N-CH 60V 2.8A SOT223-3
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 1.5W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 715pF @ 15V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 7nC @ 25V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 100mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
Drain to Source Voltage (Vdss): 60V
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
30000+ 4.65 грн
P6KE68CA-T p6ke.pdf
P6KE68CA-T
Производитель: Rectron USA
Description: TVS DIODE 58.1VWM 92VC DO15
Power Line Protection: No
Power - Peak Pulse: 600W
Current - Peak Pulse (10/1000µs): 6.5A
Voltage - Clamping (Max) @ Ipp: 92V
Voltage - Breakdown (Min): 64.6V
Voltage - Reverse Standoff (Typ): 58.1V
Bidirectional Channels: 1
Part Status: Active
Type: Zener
Supplier Device Package: DO-15
Package / Case: DO-204AC, DO-15, Axial
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
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1N4004G-T 1n4001g-1n4007g.pdf
1N4004G-T
Производитель: Rectron USA
Description: DIODE GEN PU GLASS 400V 1A DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 400V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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под заказ 41448 шт - цена и срок поставки
2N7002K 2N7002K-D.pdf 2n7002k-d.pdf SOT232N70S702K.pdf
2N7002K
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 60V 300MA SOT23
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 25V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Rds On (Max) @ Id, Vgs: 2Ohm @ 500mA, 10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power Dissipation (Max): 350mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
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под заказ 686255 шт - цена и срок поставки
2N7002KA
2N7002KA
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 60V 115MA SOT23
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Rds On (Max) @ Id, Vgs: 3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
Power Dissipation (Max): 225mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
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2N7002KS6
2N7002KS6
Производитель: Rectron USA
Description: MOSFET 2 N-CH 60V 250MA SOT363
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA,10V
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power - Max: 350mW (Ta)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363
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1N4003-T 1n4001-1n4007.pdf
1N4003-T
Производитель: Rectron USA
Description: DIODE GEN PURP 200V 1A DO-41
Diode Type: Standard
Part Status: Active
Packaging: Tape & Reel (TR)
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-41
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Reverse Leakage @ Vr: 200nA @ 1000V
Speed: Standard Recovery >500ns, > 200mA (Io)
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Current - Average Rectified (Io): 1A
Voltage - DC Reverse (Vr) (Max): 1000V
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под заказ 291733 шт - цена и срок поставки
RM12N650LD
RM12N650LD
Производитель: Rectron USA
Description: MOSFET N-CH 650V 11.5A TO252-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Technology: MOSFET (Metal Oxide)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 101W (Tc)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 50V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
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RM12N650IP
RM12N650IP
Производитель: Rectron USA
Description: MOSFET N-CH 650V 11.5A TO251
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 101W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 50V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
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RM12N650T2
RM12N650T2
Производитель: Rectron USA
Description: MOSFET N-CH 650V 11.5A TO220-3
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 50V
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 101W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 50V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
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RM12N650TI
RM12N650TI
Производитель: Rectron USA
Description: MOSFET N-CH 650V 11.5A TO220F
Rds On (Max) @ Id, Vgs: 360mOhm @ 7A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 32.6W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 870pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 25V
Vgs(th) (Max) @ Id: 4V @ 250µA
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RM6N800LD
RM6N800LD
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 800V 6A TO252-2
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 50V
Power Dissipation (Max): 98W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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RM6N800IP
RM6N800IP
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 800V 6A TO251
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1290pF @ 50V
Power Dissipation (Max): 98W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-251
Package / Case: TO-251-3 Stub Leads, IPak
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RM6N800HD
RM6N800HD
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 800V 6A TO263-2
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 50V
Power Dissipation (Max): 98W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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RM6N800TI
RM6N800TI
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 800V 6A TO220F
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tj)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 50V
Power Dissipation (Max): 32.4W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
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RM6N800T2
RM6N800T2
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 800V 6A TO220-3
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.8nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 1320pF @ 50V
Power Dissipation (Max): 98W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
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RM40N600T7
RM40N600T7
Производитель: Rectron USA
Description: IGBT TRENCH FS 600V 40A TO247-3
Voltage - Collector Emitter Breakdown (Max): 600V
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Reverse Recovery Time (trr): 151ns
Test Condition: 400V, 40A, 10Ohm, 15V
Td (on/off) @ 25°C: 21ns/203ns
Gate Charge: 149nC
Input Type: Standard
Switching Energy: 1.12mJ (on), 610µJ (off)
Power - Max: 306W
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A
Current - Collector (Ic) (Max): 80A
Current - Collector Pulsed (Icm): 160A
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
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RM4N650IP
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 650V 4A TO251
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Part Status: Active
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 20V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
4000+ 13.94 грн
RM4N650LD
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 650V 4A TO252-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 25V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
25000+ 13.94 грн
RM4N650TI
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 650V 4A TO220F
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 50V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 28.5W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 50V
Vgs (Max): ±30V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 4A
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
5000+ 17.75 грн
RM4N650T2
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 650V 4A TO220-3
Package / Case: TO-220-3
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 46W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 15V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drain to Source Voltage (Vdss): 650V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
5000+ 19.02 грн
RM47N600T7
RM47N600T7
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 600V 47A TO247
Power Dissipation (Max): 417W
Input Capacitance (Ciss) (Max) @ Vds: 3111.9pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 87.967nC @ 30V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 81mOhm @ 15.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 47A (Tj)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-247-3
Supplier Device Package: TO-247
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
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RM17N800TI
RM17N800TI
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 800V 17A TO220F
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V
Power Dissipation (Max): 35W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack
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RM17N800T2
RM17N800T2
Производитель: Rectron USA
Description: MOSFET N-CH 800V 17A TO220-3
Manufacturer: Rectron USA
Packaging: Tube
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V
Power Dissipation (Max): 260W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220-3
Package / Case: TO-220-3
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RM17N800HD
RM17N800HD
Производитель: Rectron USA
Description: MOSFET N-CH 800V 17A TO263-2
Manufacturer: Rectron USA
Packaging: Tape & Reel (TR)
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 320mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36nC @ 50V
Vgs (Max): ±30V
Input Capacitance (Ciss) (Max) @ Vds: 2060pF @ 50V
Power Dissipation (Max): 260W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263-2
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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RM7N600IP
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 600V 7A TO251
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 63W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 20V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 580mOhm @ 3A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Tube
Part Status: Active
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
4000+ 23.24 грн
RM7N600LD
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 600V 7A TO252-2
Input Capacitance (Ciss) (Max) @ Vds: 587pF @ 50V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 25V
Rds On (Max) @ Id, Vgs: 580mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 600V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Packaging: Tube
Part Status: Active
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 63W (Tc)
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
4000+ 24.51 грн
RM20N60LD
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 60V 20A TO252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 45W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 47nC @ 50V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 35mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drain to Source Voltage (Vdss): 60V
Packaging: Tape & Reel (TR)
под заказ 1000000 шт
срок поставки 7-22 дня (дней)
25000+ 5.92 грн
RM120N60T2
RM120N60T2
Производитель: Rectron USA
Description: MOSFET N-CH 60V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 67nC @ 30V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Rds On (Max) @ Id, Vgs: 4mOhm @ 60A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 180W (Tc)
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1N5368B техническая информация 1n5333b-1n5388b.pdf
1N5368B
Производитель: Rectron USA
Description: DIODE ZENER 47V 5W DO-15
Packaging: Tape & Reel (TR)
Part Status: Active
Voltage - Zener (Nom) (Vz): 47V
Tolerance: ±5%
Power - Max: 5W
Impedance (Max) (Zzt): 25 Ohms
Current - Reverse Leakage @ Vr: 500nA @ 35.8V
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
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под заказ 1233 шт - цена и срок поставки
RM5N60S4
RM5N60S4
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 60V 5A SOT223-3
Package / Case: TO-261-4, TO-261AA
Supplier Device Package: SOT-223-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 8.5nC @ 50V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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RM50N60IP
RM50N60IP
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 60V 50A TO251
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-251-3 Stub Leads, IPak
Supplier Device Package: TO-251
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 80W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 75V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
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RM50N60T2
RM50N60T2
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 60V 50A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 30V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 85W (Tc)
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RM50N60TI
RM50N60TI
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 60V 50A TO220F
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 30V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Ta)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220F
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 85W (Ta)
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RM50N60LD
RM50N60LD
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 60V 50A TO252-2
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: TO-252-2
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 85W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 50nC @ 30V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 20mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
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RM50N60DF
RM50N60DF
Производитель: Rectron USA
Description: MOSFET N-CHANNEL 60V 50A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 4000pF @ 30V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 90.3nC @ 50V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Package / Case: 8-PowerVDFN
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tape & Reel (TR)
Manufacturer: Rectron USA
Supplier Device Package: 8-DFN (5x6)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 75W (Tc)
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RM150N60T2
RM150N60T2
Производитель: Rectron USA
Description: MOSFET N-CH 60V 150A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 163nC @ 25V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 75A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube
Manufacturer: Rectron USA
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power Dissipation (Max): 220W (Tc)
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