Продукция производителя vishay siliconix

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SUM45N25-58-E3 SUM45N25-58-E3 sum45n25.pdf Vishay Siliconix Description: MOSFET N-CH 250V 45A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Дополнительная плата за катушку в размере $7)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
под заказ 20788 шт
срок поставки 7-22 дня (дней)
1+ 469.07 грн
10+ 174.74 грн
100+ 111.9 грн
IRFR014TRLPBF IRFR014TRLPBF sihfr014.pdf Vishay Siliconix Description: MOSFET N-CH 60V 7.7A DPAK
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: IRFR014
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
под заказ 2105 шт
срок поставки 7-22 дня (дней)
1+ 73.25 грн
10+ 65.57 грн
100+ 51.13 грн
500+ 38.17 грн
1000+ 30.14 грн
IRFZ24STRR IRFZ24STRR IRFZ24.pdf Vishay Siliconix Description: MOSFET N-CH 60V 17A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IRFZ24STRL IRFZ24STRL IRFZ24.pdf Vishay Siliconix Description: MOSFET N-CH 60V 17A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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под заказ 50000 шт - цена и срок поставки
IRFZ24 IRFZ24 sihfz24.pdf Vishay Siliconix Description: MOSFET N-CH 60V 17A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tube
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IRFZ24STRRPBF IRFZ24STRRPBF sihfz24.pdf Vishay Siliconix Description: MOSFET N-CH 60V 17A TO263
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
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SIP12107DB SIP12107DB sip12107.pdf Vishay Siliconix Description: EVAL BOARD BUCK REG 5V 3A
Regulator Topology: Buck
Voltage - Input: 2.8V ~ 5.5V
Current - Output: 3A
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Utilized IC / Part: SiP12107
Supplied Contents: Board
Board Type: Fully Populated
под заказ 3 шт
срок поставки 7-22 дня (дней)
1+ 2868.24 грн
SIA928DJ-T1-GE3 SIA928DJ-T1-GE3 sia928dj.pdf Vishay Siliconix Description: MOSFET 2N-CH 30V POWERPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
под заказ 2496 шт
срок поставки 7-22 дня (дней)
под заказ 4163 шт - цена и срок поставки
IRF530STRL IRF530STRL sihf530s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 14A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRF530L IRF530L 91019.pdf Vishay Siliconix Description: MOSFET N-CH 100V 14A TO262
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Base Part Number: IRF530
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
FET Type: N-Channel
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IRF530STRR IRF530STRR sihf530s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 14A D2PAK
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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IRF530S IRF530S sihf530s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 14A D2PAK
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
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под заказ 200 шт - цена и срок поставки
IRF530 IRF530 91019.pdf Vishay Siliconix Description: MOSFET N-CH 100V 14A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Part Status: Obsolete
Supplier Device Package: TO-220AB
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Operating Temperature: -55°C ~ 175°C (TJ)
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под заказ 450 шт - цена и срок поставки
IRF530STRRPBF IRF530STRRPBF sihf530s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 14A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Дополнительная плата за катушку в размере $7)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
под заказ 800 шт
срок поставки 7-22 дня (дней)
1+ 381.7 грн
10+ 96.24 грн
25+ 74.03 грн
100+ 46.26 грн
250+ 43.47 грн
IRF530STRLPBF IRF530STRLPBF sihf530s.pdf Vishay Siliconix Description: MOSFET N-CH 100V 14A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Дополнительная плата за катушку в размере $7)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
под заказ 2240 шт
срок поставки 7-22 дня (дней)
под заказ 3519 шт - цена и срок поставки
1+ 378.17 грн
10+ 93.11 грн
25+ 71.06 грн
100+ 44.18 грн
250+ 41.44 грн
IRFP450NPBF IRFP450NPBF IRFP450N,SiHFP450N.pdf Vishay Siliconix Description: MOSFET N-CH 500V 14A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
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под заказ 430 шт - цена и срок поставки
IRFP450LC IRFP450LC 91231.pdf Vishay Siliconix Description: MOSFET N-CH 500V 14A TO247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
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под заказ 46 шт - цена и срок поставки
IRFP450A IRFP450A 91230.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 500V 14A TO247-3
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IRFP450 IRFP450 91233.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 500V 14A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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под заказ 250 шт - цена и срок поставки
IRFP450APBF IRFP450APBF 91230.pdf Vishay Siliconix Description: MOSFET N-CH 500V 14A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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под заказ 1742 шт - цена и срок поставки
IRFP450PBF IRFP450PBF 91233.pdf Vishay Siliconix Description: MOSFET N-CH 500V 14A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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под заказ 718 шт - цена и срок поставки
SISS26LDN-T1-GE3 SISS26LDN-T1-GE3 siss26ldn.pdf Vishay Siliconix Description: MOSFET N-CH 60V 23.7A/81.2A PPAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
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под заказ 5900 шт - цена и срок поставки
SST5486-E3 2N;SST5484%20Series.pdf Vishay Siliconix Description: JFET P-CH 35V 8MA SOT-23
Power - Max: 350mW
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
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SST5486-T1-E3 2N;SST5484%20Series.pdf Vishay Siliconix Description: JFET P-CH 35V 8MA SOT-23
Power - Max: 350mW
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
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под заказ 1219 шт - цена и срок поставки
SST204-E3 SST204-E3 J;SST201%20Series.pdf Vishay Siliconix Description: JFET N-CH 25V .7MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: SST204
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
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SST5484-E3 2N;SST5484%20Series.pdf техническая информация Vishay Siliconix Description: JFET P-CH 35V 1MA SOT-23
Power - Max: 350mW
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
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SST204-T1-E3 SST204-T1-E3 J;SST201%20Series.pdf Vishay Siliconix Description: JFET N-CH 25V 0.35W SOT-23
Base Part Number: SST204
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
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под заказ 2248 шт - цена и срок поставки
SST5462-T1-E3 2N;SST5460%20Series.pdf Vishay Siliconix Description: JFET P-CH 55V 4MA SOT-23
Power - Max: 350mW
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 1.8V @ 1µA
Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: P-Channel
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SST5484-T1-E3 2N;SST5484%20Series.pdf Vishay Siliconix Description: JFET P-CH 35V 1MA SOT-23
Power - Max: 350mW
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
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под заказ 33000 шт - цена и срок поставки
SST5485-T1-E3 2N;SST5484%20Series.pdf Vishay Siliconix Description: JFET P-CH 35V 4MA SOT-23
Power - Max: 350mW
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
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под заказ 3002324 шт - цена и срок поставки
SST5485-E3 2N;SST5484%20Series.pdf Vishay Siliconix Description: JFET P-CH 35V 4MA SOT-23
Power - Max: 350mW
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
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SST5461-T1-E3 SST5461-T1-E3 2N;SST5460%20Series.pdf Vishay Siliconix Description: JFET P-CH 55V 2MA SOT-23
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
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SST4416-E3 SST4416-E3 2N4416,2N4416A.SST4416.pdf Vishay Siliconix Description: JFET N-CH 36V 5MA SOT-23
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 3V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Voltage - Breakdown (V(BR)GSS): 30V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
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под заказ 195 шт - цена и срок поставки
SST4416-T1-E3 2N4416,2N4416A.SST4416.pdf Vishay Siliconix Description: JFET N-CH 36V 5MA SOT-23
Power - Max: 350mW
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 3V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Voltage - Breakdown (V(BR)GSS): 30V
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под заказ 45000 шт - цена и срок поставки
SST201-T1-E3 SST201-T1-E3 J;SST201%20Series.pdf Vishay Siliconix Description: JFET N-CH 25V .7MA SOT-23
Base Part Number: SST201
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
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под заказ 8518 шт - цена и срок поставки
SST174-E3 SST174-E3 J;SST174,175,176,177%20Series.pdf Vishay Siliconix Description: JFET N-CH 30V 20MA SOT-23
Supplier Device Package: TO-236
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Resistance - RDS(On): 85 Ohms
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
Voltage - Breakdown (V(BR)GSS): 30V
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
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SST174-T1-E3 SST174-T1-E3 J;SST174,175,176,177%20Series.pdf Vishay Siliconix Description: JFET N-CH 30V 20MA SOT-23
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
Resistance - RDS(On): 85 Ohms
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
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под заказ 33000 шт - цена и срок поставки
SST4119-T1-E3 SST4119-T1-E3 2N,PN,SST4117A%20Series.pdf Vishay Siliconix Description: JFET N-CH 70V 200UA SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 10V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: TO-236
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под заказ 69098 шт - цена и срок поставки
SST4118-T1-E3 SST4118-T1-E3 2N,PN,SST4117A%20Series.pdf Vishay Siliconix Description: JFET N-CH 70V 80UA SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 80µA @ 10V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-23
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под заказ 58000 шт - цена и срок поставки
2N4392 2N,PN,SST4391.pdf техническая информация Vishay Siliconix Description: MOSFET N-CH 40V .1NA TO-18
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Power - Max: 1.8W
Resistance - RDS(On): 60 Ohms
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
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под заказ 6580 шт - цена и срок поставки
2N4392-E3 2N,PN,SST4391.pdf Vishay Siliconix Description: MOSFET N-CH 40V .1NA TO-18
Resistance - RDS(On): 60 Ohms
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.8W
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2N4393 2N,PN,SST4391.pdf Vishay Siliconix Description: MOSFET N-CH 40V .1NA TO-18
Packaging: Bulk
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.8W
Resistance - RDS(On): 100 Ohms
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
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под заказ 12546 шт - цена и срок поставки
2N4393-E3 2N,PN,SST4391.pdf Vishay Siliconix Description: MOSFET N-CH 40V .1NA TO-18
Part Status: Obsolete
Packaging: Bulk
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Resistance - RDS(On): 100 Ohms
Power - Max: 1.8W
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
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2N4416A 2N4416A 2N4416,2N4416A.SST4416.pdf Vishay Siliconix Description: MOSFET N-CH 35V 5MA TO-206AF
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-206AF (TO-72)
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
FET Type: N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
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под заказ 38160 шт - цена и срок поставки
2N4416A-E3 2N4416A-E3 2N4416,2N4416A.SST4416.pdf Vishay Siliconix Description: MOSFET N-CH 35V 5MA TO-206AF
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
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2N4118A 2N4118A 2N,PN,SST4117A%20Series.pdf Vishay Siliconix Description: MOSFET N-CH 40V 80UA TO-206AF
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Base Part Number: 2N4118
Supplier Device Package: TO-206AF (TO-72)
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 80µA @ 10V
Voltage - Breakdown (V(BR)GSS): 40V
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под заказ 23732 шт - цена и срок поставки
2N4118A-E3 2N4118A-E3 2N,PN,SST4117A%20Series.pdf Vishay Siliconix Description: MOSFET N-CH 40V 80UA TO-206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
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2N4119A 2N4119A 2N,PN,SST4117A%20Series.pdf Vishay Siliconix Description: MOSFET N-CH 40V 200UA TO-206AF
Supplier Device Package: TO-206AF (TO-72)
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 10V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
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2N4119A-E3 2N4119A-E3 2N,PN,SST4117A%20Series.pdf Vishay Siliconix Description: MOSFET N-CH 40V 200UA TO-206AF
Supplier Device Package: TO-206AF (TO-72)
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 10V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
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2N4416 2N4416 2N4416,2N4416A.SST4416.pdf техническая информация Vishay Siliconix Description: JFET N-CH 30V 0.3W TO-206AF
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
FET Type: N-Channel
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
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2N4416-E3 2N4416-E3 2N4416,2N4416A.SST4416.pdf Vishay Siliconix Description: JFET N-CH 30V 0.3W TO-206AF
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Part Status: Obsolete
Power - Max: 300 mW
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
FET Type: N-Channel
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
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2N4338 2N4338-4341.pdf Vishay Siliconix Description: MOSFET N-CH 50V 600UA TO-206AA
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 100nA
Supplier Device Package: TO-206AA (TO-18)
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 50V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
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под заказ 11754 шт - цена и срок поставки
2N4338-E3 2N4338-4341.pdf Vishay Siliconix Description: MOSFET N-CH 50V 600UA TO-206AA
Voltage - Cutoff (VGS off) @ Id: 300mV @ 100nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 50V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Power - Max: 300mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)
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2N4339 2N4338-4341.pdf Vishay Siliconix Description: MOSFET N-CH 50V 1.5MA TO-206AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA
Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V
Voltage - Breakdown (V(BR)GSS): 50V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
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под заказ 7747 шт - цена и срок поставки
2N4339-E3 2N4338-4341.pdf Vishay Siliconix Description: MOSFET N-CH 50V 1.5MA TO-206AA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA
Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V
Voltage - Breakdown (V(BR)GSS): 50V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Power - Max: 300mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)
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2N4117A 2N4117A 2N,PN,SST4117A%20Series.pdf Vishay Siliconix Description: MOSFET N-CH 40V 30UA TO-206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
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под заказ 18165 шт - цена и срок поставки
2N4117A-E3 2N4117A-E3 2N,PN,SST4117A%20Series.pdf Vishay Siliconix Description: MOSFET N-CH 40V 30UA TO-206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
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2N5432 2N5432%20thru%202N5434.pdf Vishay Siliconix Description: JFET N-CH 25V TO-52
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
Power - Max: 300mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
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под заказ 20697 шт - цена и срок поставки
2N5432-E3 2N5432%20thru%202N5434.pdf Vishay Siliconix Description: JFET N-CH 25V TO-52
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Power - Max: 300mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
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2N5433 2N5432%20thru%202N5434.pdf Vishay Siliconix Description: JFET N-CH 25V 0.3W TO-52
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 3V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
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под заказ 20489 шт - цена и срок поставки
2N5433-E3 2N5432%20thru%202N5434.pdf Vishay Siliconix Description: JFET N-CH 25V 0.3W TO-52
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 3V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AC, TO-52-3 Metal Can
Supplier Device Package: TO-206AC (TO-52)
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2N5114 124387-lds-0006 Vishay Siliconix Description: JFET P-CH 30V TO-206AA
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
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под заказ 5524 шт - цена и срок поставки
2N5114-E3 Vishay Siliconix Description: JFET P-CH 30V TO-206AA
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
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U290 U290,U291.pdf Vishay Siliconix Description: JFET N-CH 30V 0.5W TO-206AC
Power - Max: 500mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Resistance - RDS(On): 3 Ohm
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 500mA @ 10V
Voltage - Breakdown (V(BR)GSS): 30V
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под заказ 3694 шт - цена и срок поставки
U290-E3 U290,U291.pdf Vishay Siliconix Description: JFET N-CH 30V 0.5W TO-206AC
Power - Max: 500mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Resistance - RDS(On): 3 Ohm
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 500mA @ 10V
Voltage - Breakdown (V(BR)GSS): 30V
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U291 U290,U291.pdf Vishay Siliconix Description: JFET N-CH 30V 0.5W TO-206AC
Power - Max: 500mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Resistance - RDS(On): 7 Ohm
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 1.5V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 200mA @ 10V
Voltage - Breakdown (V(BR)GSS): 30V
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под заказ 3237 шт - цена и срок поставки
U291-E3 U290,U291.pdf Vishay Siliconix Description: JFET N-CH 30V 0.5W TO-206AC
Power - Max: 500mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Resistance - RDS(On): 7 Ohm
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 1.5V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 200mA @ 10V
Voltage - Breakdown (V(BR)GSS): 30V
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U310-E3 J;SST;U308%20Series.pdf Vishay Siliconix Description: JFET P-CH 25V TO-52
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Power - Max: 500mW
Current - Drain (Idss) @ Vds (Vgs=0): 24mA @ 10V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Voltage - Cutoff (VGS off) @ Id: 2.5V @ 1nA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AC, TO-52-3 Metal Can
Supplier Device Package: TO-206AC (TO-52)
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под заказ 564 шт - цена и срок поставки
U430 U430,U431.pdf Vishay Siliconix Description: JFET P-CH 25V TO-78
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
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под заказ 2006795 шт - цена и срок поставки
U430-E3 U430,U431.pdf Vishay Siliconix Description: JFET DUAL P-CH 25V TO-78
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
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U431 U430,U431.pdf Vishay Siliconix Description: JFET DUAL P-CH 25V TO-78
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
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под заказ 6237 шт - цена и срок поставки
U440 U440.U441.pdf Vishay Siliconix Description: JFET DUAL P-CH 25V TO-71
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
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под заказ 5797 шт - цена и срок поставки
U440-E3 U440.U441.pdf Vishay Siliconix Description: JFET DUAL P-CH 25V TO-71
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
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U441 U440.U441.pdf Vishay Siliconix Description: JFET 2N-CH 25V TO-71
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
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под заказ 1759 шт - цена и срок поставки
U441-E3 U440.U441.pdf Vishay Siliconix Description: JFET 2N-CH 25V TO-71
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
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2N5545JTX01 Vishay Siliconix Description: JFET N-CH 50V TO-71
Supplier Device Package: TO-71
Package / Case: TO-71-6
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
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2N4856JAN02 Vishay Siliconix Description: MOSFET N-CH 40V 50MA TO-18
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
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2N4857JAN02 Vishay Siliconix Description: JFET N-CH 40V 360MA TO-18
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)
Base Part Number: 2N4857
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2N4858JAN02 Vishay Siliconix Description: JFET N-CH 40V 80MA TO-18
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
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2N4859JAN02 alucapsreach.pdf Vishay Siliconix Description: JFET N-CH 30V 360MW TO-18
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
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2N4860JAN02 Vishay Siliconix Description: JFET N-CH 30V TO-206
Base Part Number: 2N4860
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Packaging: Tube
Part Status: Obsolete
Manufacturer: Vishay Siliconix
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2N5547JTX01 Vishay Siliconix Description: JFET N-CH 50V TO-71
Supplier Device Package: TO-71
Package / Case: TO-71-6
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
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2N4860JTX02 Vishay Siliconix Description: JFET N-CH 30V TO-206
Base Part Number: 2N4860
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
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2N4861JTX02 Vishay Siliconix Description: JFET N-CH 30V TO-206
Base Part Number: 2N4861
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
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2N4861JAN02 Vishay Siliconix Description: JFET N-CH 30V TO-206
Base Part Number: 2N4861
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
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под заказ 100 шт - цена и срок поставки
2N4860JTXL02 Vishay Siliconix Description: JFET N-CH 30V TO-206
Base Part Number: 2N4860
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
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2N4861JTXL02 Vishay Siliconix Description: JFET N-CH 30V TO-206
Base Part Number: 2N4861
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
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2N5547JTXL01 Vishay Siliconix Description: JFET N-CH 50V TO-71
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-71
Package / Case: TO-71-6
Mounting Type: Through Hole
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2N5547JTXV01 Vishay Siliconix Description: JFET N-CH 50V TO-71
Package / Case: TO-71-6
Mounting Type: Through Hole
Part Status: Obsolete
Supplier Device Package: TO-71
Packaging: Tube
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2N4416A-2 2N4416A-2 2N4416,2N4416A.SST4416.pdf Vishay Siliconix Description: MOSFET N-CH 35V 5MA TO-206AF
FET Type: N-Channel
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 35 V
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
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2N5432-2 2N5432%20thru%202N5434.pdf Vishay Siliconix Description: JFET N-CH 25V 0.3W TO-52
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-206AC (TO-52)
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2N5433-2 2N5432%20thru%202N5434.pdf Vishay Siliconix Description: JFET N-CH 25V 0.3W TO-52
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 3V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
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2N4391 2N,PN,SST4391.pdf Vishay Siliconix Description: MOSFET N-CH 40V .1NA TO-18
Power - Max: 1.8 W
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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под заказ 33313 шт - цена и срок поставки
2N4391-E3 2N,PN,SST4391.pdf Vishay Siliconix Description: MOSFET N-CH 40V .1NA TO-18
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Power - Max: 1.8 W
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
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под заказ 1016000 шт - цена и срок поставки
2N4860JTXV02 Vishay Siliconix Description: JFET N-CH 30V TO-206
Base Part Number: 2N4860
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
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2N4861JTXV02 Vishay Siliconix Description: JFET N-CH 30V TO-206
Base Part Number: 2N4861
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
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2N4391-2 2N,PN,SST4391.pdf Vishay Siliconix Description: MOSFET N-CH 40V .1NA TO-18
Packaging: Bulk
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Power - Max: 1.8 W
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Package / Case: TO-206AA, TO-18-3 Metal Can
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2N4856JTX02 Vishay Siliconix Description: MOSFET N-CH 40V 50MA TO-18
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Bulk
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SUM45N25-58-E3 sum45n25.pdf
SUM45N25-58-E3
Производитель: Vishay Siliconix
Description: MOSFET N-CH 250V 45A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 5000pF @ 25V
Vgs (Max): ±30V
Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 58mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Drain to Source Voltage (Vdss): 250V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Дополнительная плата за катушку в размере $7)
Power Dissipation (Max): 3.75W (Ta), 375W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-263 (D2Pak)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
под заказ 20788 шт
срок поставки 7-22 дня (дней)
1+ 469.07 грн
10+ 174.74 грн
100+ 111.9 грн
IRFR014TRLPBF sihfr014.pdf
IRFR014TRLPBF
Производитель: Vishay Siliconix
Description: MOSFET N-CH 60V 7.7A DPAK
Part Status: Active
Packaging: Cut Tape (CT)
Manufacturer: Vishay Siliconix
Base Part Number: IRFR014
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 200mOhm @ 4.6A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 7.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
под заказ 2105 шт
срок поставки 7-22 дня (дней)
1+ 73.25 грн
10+ 65.57 грн
100+ 51.13 грн
500+ 38.17 грн
1000+ 30.14 грн
IRFZ24STRR IRFZ24.pdf
IRFZ24STRR
Производитель: Vishay Siliconix
Description: MOSFET N-CH 60V 17A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Packaging: Tape & Reel (TR)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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IRFZ24STRL IRFZ24.pdf
IRFZ24STRL
Производитель: Vishay Siliconix
Description: MOSFET N-CH 60V 17A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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под заказ 50000 шт - цена и срок поставки
IRFZ24 sihfz24.pdf
IRFZ24
Производитель: Vishay Siliconix
Description: MOSFET N-CH 60V 17A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Technology: MOSFET (Metal Oxide)
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Packaging: Tube
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IRFZ24STRRPBF sihfz24.pdf
IRFZ24STRRPBF
Производитель: Vishay Siliconix
Description: MOSFET N-CH 60V 17A TO263
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D²Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
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SIP12107DB sip12107.pdf
SIP12107DB
Производитель: Vishay Siliconix
Description: EVAL BOARD BUCK REG 5V 3A
Regulator Topology: Buck
Voltage - Input: 2.8V ~ 5.5V
Current - Output: 3A
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Utilized IC / Part: SiP12107
Supplied Contents: Board
Board Type: Fully Populated
под заказ 3 шт
срок поставки 7-22 дня (дней)
1+ 2868.24 грн
SIA928DJ-T1-GE3 sia928dj.pdf
SIA928DJ-T1-GE3
Производитель: Vishay Siliconix
Description: MOSFET 2N-CH 30V POWERPAK SC70-6
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 7.8W
FET Type: 2 N-Channel (Dual)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V
FET Feature: Standard
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
под заказ 2496 шт
срок поставки 7-22 дня (дней)
под заказ 4163 шт - цена и срок поставки
IRF530STRL sihf530s.pdf
IRF530STRL
Производитель: Vishay Siliconix
Description: MOSFET N-CH 100V 14A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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IRF530L 91019.pdf
IRF530L
Производитель: Vishay Siliconix
Description: MOSFET N-CH 100V 14A TO262
Part Status: Active
Packaging: Tube
Manufacturer: Vishay Siliconix
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Base Part Number: IRF530
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: TO-262
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
FET Type: N-Channel
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IRF530STRR sihf530s.pdf
IRF530STRR
Производитель: Vishay Siliconix
Description: MOSFET N-CH 100V 14A D2PAK
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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IRF530S sihf530s.pdf
IRF530S
Производитель: Vishay Siliconix
Description: MOSFET N-CH 100V 14A D2PAK
Technology: MOSFET (Metal Oxide)
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
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под заказ 200 шт - цена и срок поставки
IRF530 91019.pdf
IRF530
Производитель: Vishay Siliconix
Description: MOSFET N-CH 100V 14A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Part Status: Obsolete
Supplier Device Package: TO-220AB
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Power Dissipation (Max): 88W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Operating Temperature: -55°C ~ 175°C (TJ)
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под заказ 450 шт - цена и срок поставки
IRF530STRRPBF sihf530s.pdf
IRF530STRRPBF
Производитель: Vishay Siliconix
Description: MOSFET N-CH 100V 14A D2PAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Дополнительная плата за катушку в размере $7)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D²Pak)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
под заказ 800 шт
срок поставки 7-22 дня (дней)
1+ 381.7 грн
10+ 96.24 грн
25+ 74.03 грн
100+ 46.26 грн
250+ 43.47 грн
IRF530STRLPBF sihf530s.pdf
IRF530STRLPBF
Производитель: Vishay Siliconix
Description: MOSFET N-CH 100V 14A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 670pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Rds On (Max) @ Id, Vgs: 160mOhm @ 8.4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Drain to Source Voltage (Vdss): 100V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Digi-Reel® (Дополнительная плата за катушку в размере $7)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Power Dissipation (Max): 3.7W (Ta), 88W (Tc)
под заказ 2240 шт
срок поставки 7-22 дня (дней)
под заказ 3519 шт - цена и срок поставки
1+ 378.17 грн
10+ 93.11 грн
25+ 71.06 грн
100+ 44.18 грн
250+ 41.44 грн
IRFP450NPBF IRFP450N,SiHFP450N.pdf
IRFP450NPBF
Производитель: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247-3
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2260 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 370mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
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под заказ 430 шт - цена и срок поставки
IRFP450LC 91231.pdf
IRFP450LC
Производитель: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
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под заказ 46 шт - цена и срок поставки
IRFP450A техническая информация 91230.pdf
IRFP450A
Производитель: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247-3
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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IRFP450 техническая информация 91233.pdf
IRFP450
Производитель: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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под заказ 250 шт - цена и срок поставки
IRFP450APBF 91230.pdf
IRFP450APBF
Производитель: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247-3
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2038 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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под заказ 1742 шт - цена и срок поставки
IRFP450PBF 91233.pdf
IRFP450PBF
Производитель: Vishay Siliconix
Description: MOSFET N-CH 500V 14A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Operating Temperature: -55°C ~ 150°C (TJ)
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-247AC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 190W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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SISS26LDN-T1-GE3 siss26ldn.pdf
SISS26LDN-T1-GE3
Производитель: Vishay Siliconix
Description: MOSFET N-CH 60V 23.7A/81.2A PPAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® 1212-8S
Packaging: Cut Tape (CT)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK® 1212-8S
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
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под заказ 5900 шт - цена и срок поставки
SST5486-E3 2N;SST5484%20Series.pdf
Производитель: Vishay Siliconix
Description: JFET P-CH 35V 8MA SOT-23
Power - Max: 350mW
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
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SST5486-T1-E3 2N;SST5484%20Series.pdf
Производитель: Vishay Siliconix
Description: JFET P-CH 35V 8MA SOT-23
Power - Max: 350mW
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 2V @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 8mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
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под заказ 1219 шт - цена и срок поставки
SST204-E3 J;SST201%20Series.pdf
SST204-E3
Производитель: Vishay Siliconix
Description: JFET N-CH 25V .7MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Base Part Number: SST204
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
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SST5484-E3 техническая информация 2N;SST5484%20Series.pdf
Производитель: Vishay Siliconix
Description: JFET P-CH 35V 1MA SOT-23
Power - Max: 350mW
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
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SST204-T1-E3 J;SST201%20Series.pdf
SST204-T1-E3
Производитель: Vishay Siliconix
Description: JFET N-CH 25V 0.35W SOT-23
Base Part Number: SST204
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
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SST5462-T1-E3 2N;SST5460%20Series.pdf
Производитель: Vishay Siliconix
Description: JFET P-CH 55V 4MA SOT-23
Power - Max: 350mW
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 1.8V @ 1µA
Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: P-Channel
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SST5484-T1-E3 2N;SST5484%20Series.pdf
Производитель: Vishay Siliconix
Description: JFET P-CH 35V 1MA SOT-23
Power - Max: 350mW
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 1mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
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под заказ 33000 шт - цена и срок поставки
SST5485-T1-E3 2N;SST5484%20Series.pdf
Производитель: Vishay Siliconix
Description: JFET P-CH 35V 4MA SOT-23
Power - Max: 350mW
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
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под заказ 3002324 шт - цена и срок поставки
SST5485-E3 2N;SST5484%20Series.pdf
Производитель: Vishay Siliconix
Description: JFET P-CH 35V 4MA SOT-23
Power - Max: 350mW
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 500mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 4mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
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SST5461-T1-E3 2N;SST5460%20Series.pdf
SST5461-T1-E3
Производитель: Vishay Siliconix
Description: JFET P-CH 55V 2MA SOT-23
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 40V
Current - Drain (Idss) @ Vds (Vgs=0): 2mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 1V @ 1µA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
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SST4416-E3 2N4416,2N4416A.SST4416.pdf
SST4416-E3
Производитель: Vishay Siliconix
Description: JFET N-CH 36V 5MA SOT-23
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 3V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Voltage - Breakdown (V(BR)GSS): 30V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
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под заказ 195 шт - цена и срок поставки
SST4416-T1-E3 2N4416,2N4416A.SST4416.pdf
Производитель: Vishay Siliconix
Description: JFET N-CH 36V 5MA SOT-23
Power - Max: 350mW
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 2.2pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 3V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 15V
Voltage - Breakdown (V(BR)GSS): 30V
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под заказ 45000 шт - цена и срок поставки
SST201-T1-E3 J;SST201%20Series.pdf
SST201-T1-E3
Производитель: Vishay Siliconix
Description: JFET N-CH 25V .7MA SOT-23
Base Part Number: SST201
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 4.5pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
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под заказ 8518 шт - цена и срок поставки
SST174-E3 J;SST174,175,176,177%20Series.pdf
SST174-E3
Производитель: Vishay Siliconix
Description: JFET N-CH 30V 20MA SOT-23
Supplier Device Package: TO-236
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 350mW
Resistance - RDS(On): 85 Ohms
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
Voltage - Breakdown (V(BR)GSS): 30V
FET Type: P-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
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SST174-T1-E3 J;SST174,175,176,177%20Series.pdf
SST174-T1-E3
Производитель: Vishay Siliconix
Description: JFET N-CH 30V 20MA SOT-23
Packaging: Tape & Reel (TR)
Part Status: Obsolete
FET Type: P-Channel
Voltage - Breakdown (V(BR)GSS): 30V
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 5V @ 10nA
Input Capacitance (Ciss) (Max) @ Vds: 20pF @ 0V
Resistance - RDS(On): 85 Ohms
Power - Max: 350mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
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под заказ 33000 шт - цена и срок поставки
SST4119-T1-E3 2N,PN,SST4117A%20Series.pdf
SST4119-T1-E3
Производитель: Vishay Siliconix
Description: JFET N-CH 70V 200UA SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 10V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: TO-236
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под заказ 69098 шт - цена и срок поставки
SST4118-T1-E3 2N,PN,SST4117A%20Series.pdf
SST4118-T1-E3
Производитель: Vishay Siliconix
Description: JFET N-CH 70V 80UA SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 350mW
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 80µA @ 10V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tape & Reel (TR)
Supplier Device Package: SOT-23
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под заказ 58000 шт - цена и срок поставки
2N4392 техническая информация 2N,PN,SST4391.pdf
Производитель: Vishay Siliconix
Description: MOSFET N-CH 40V .1NA TO-18
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Power - Max: 1.8W
Resistance - RDS(On): 60 Ohms
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
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под заказ 6580 шт - цена и срок поставки
2N4392-E3 2N,PN,SST4391.pdf
Производитель: Vishay Siliconix
Description: MOSFET N-CH 40V .1NA TO-18
Resistance - RDS(On): 60 Ohms
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 25mA @ 20V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.8W
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2N4393 2N,PN,SST4391.pdf
Производитель: Vishay Siliconix
Description: MOSFET N-CH 40V .1NA TO-18
Packaging: Bulk
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 1.8W
Resistance - RDS(On): 100 Ohms
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
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2N4393-E3 2N,PN,SST4391.pdf
Производитель: Vishay Siliconix
Description: MOSFET N-CH 40V .1NA TO-18
Part Status: Obsolete
Packaging: Bulk
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Cutoff (VGS off) @ Id: 500mV @ 1nA
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
Resistance - RDS(On): 100 Ohms
Power - Max: 1.8W
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Current - Drain (Idss) @ Vds (Vgs=0): 5mA @ 20V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
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2N4416A 2N4416,2N4416A.SST4416.pdf
2N4416A
Производитель: Vishay Siliconix
Description: MOSFET N-CH 35V 5MA TO-206AF
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-206AF (TO-72)
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
FET Type: N-Channel
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
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2N4416A-E3 2N4416,2N4416A.SST4416.pdf
2N4416A-E3
Производитель: Vishay Siliconix
Description: MOSFET N-CH 35V 5MA TO-206AF
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
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2N4118A 2N,PN,SST4117A%20Series.pdf
2N4118A
Производитель: Vishay Siliconix
Description: MOSFET N-CH 40V 80UA TO-206AF
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Base Part Number: 2N4118
Supplier Device Package: TO-206AF (TO-72)
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Cutoff (VGS off) @ Id: 1V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 80µA @ 10V
Voltage - Breakdown (V(BR)GSS): 40V
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под заказ 23732 шт - цена и срок поставки
2N4118A-E3 2N,PN,SST4117A%20Series.pdf
2N4118A-E3
Производитель: Vishay Siliconix
Description: MOSFET N-CH 40V 80UA TO-206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 80 µA @ 10 V
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2N4119A 2N,PN,SST4117A%20Series.pdf
2N4119A
Производитель: Vishay Siliconix
Description: MOSFET N-CH 40V 200UA TO-206AF
Supplier Device Package: TO-206AF (TO-72)
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 10V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
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2N4119A-E3 2N,PN,SST4117A%20Series.pdf
2N4119A-E3
Производитель: Vishay Siliconix
Description: MOSFET N-CH 40V 200UA TO-206AF
Supplier Device Package: TO-206AF (TO-72)
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Cutoff (VGS off) @ Id: 2V @ 1nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 10V
Voltage - Breakdown (V(BR)GSS): 40V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
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2N4416 техническая информация 2N4416,2N4416A.SST4416.pdf
2N4416
Производитель: Vishay Siliconix
Description: JFET N-CH 30V 0.3W TO-206AF
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
FET Type: N-Channel
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
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2N4416-E3 2N4416,2N4416A.SST4416.pdf
2N4416-E3
Производитель: Vishay Siliconix
Description: JFET N-CH 30V 0.3W TO-206AF
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 nA
Part Status: Obsolete
Power - Max: 300 mW
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
FET Type: N-Channel
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
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2N4338 2N4338-4341.pdf
Производитель: Vishay Siliconix
Description: MOSFET N-CH 50V 600UA TO-206AA
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 300mV @ 100nA
Supplier Device Package: TO-206AA (TO-18)
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 50V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
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2N4338-E3 2N4338-4341.pdf
Производитель: Vishay Siliconix
Description: MOSFET N-CH 50V 600UA TO-206AA
Voltage - Cutoff (VGS off) @ Id: 300mV @ 100nA
Current - Drain (Idss) @ Vds (Vgs=0): 200µA @ 15V
Voltage - Breakdown (V(BR)GSS): 50V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Power - Max: 300mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)
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2N4339 2N4338-4341.pdf
Производитель: Vishay Siliconix
Description: MOSFET N-CH 50V 1.5MA TO-206AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA
Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V
Voltage - Breakdown (V(BR)GSS): 50V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
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2N4339-E3 2N4338-4341.pdf
Производитель: Vishay Siliconix
Description: MOSFET N-CH 50V 1.5MA TO-206AA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
Voltage - Cutoff (VGS off) @ Id: 600mV @ 100nA
Current - Drain (Idss) @ Vds (Vgs=0): 500µA @ 15V
Voltage - Breakdown (V(BR)GSS): 50V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Bulk
Power - Max: 300mW
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)
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2N4117A 2N,PN,SST4117A%20Series.pdf
2N4117A
Производитель: Vishay Siliconix
Description: MOSFET N-CH 40V 30UA TO-206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
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2N4117A-E3 2N,PN,SST4117A%20Series.pdf
2N4117A-E3
Производитель: Vishay Siliconix
Description: MOSFET N-CH 40V 30UA TO-206AF
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 40 V
Supplier Device Package: TO-206AF (TO-72)
Part Status: Obsolete
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 30 µA @ 10 V
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2N5432 2N5432%20thru%202N5434.pdf
Производитель: Vishay Siliconix
Description: JFET N-CH 25V TO-52
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
Power - Max: 300mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
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2N5432-E3 2N5432%20thru%202N5434.pdf
Производитель: Vishay Siliconix
Description: JFET N-CH 25V TO-52
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Power - Max: 300mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
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2N5433 2N5432%20thru%202N5434.pdf
Производитель: Vishay Siliconix
Description: JFET N-CH 25V 0.3W TO-52
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 3V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
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под заказ 20489 шт - цена и срок поставки
2N5433-E3 2N5432%20thru%202N5434.pdf
Производитель: Vishay Siliconix
Description: JFET N-CH 25V 0.3W TO-52
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 3V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AC, TO-52-3 Metal Can
Supplier Device Package: TO-206AC (TO-52)
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2N5114 124387-lds-0006
Производитель: Vishay Siliconix
Description: JFET P-CH 30V TO-206AA
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
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под заказ 5524 шт - цена и срок поставки
2N5114-E3
Производитель: Vishay Siliconix
Description: JFET P-CH 30V TO-206AA
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
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U290 U290,U291.pdf
Производитель: Vishay Siliconix
Description: JFET N-CH 30V 0.5W TO-206AC
Power - Max: 500mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Resistance - RDS(On): 3 Ohm
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 500mA @ 10V
Voltage - Breakdown (V(BR)GSS): 30V
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U290-E3 U290,U291.pdf
Производитель: Vishay Siliconix
Description: JFET N-CH 30V 0.5W TO-206AC
Power - Max: 500mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Resistance - RDS(On): 3 Ohm
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 500mA @ 10V
Voltage - Breakdown (V(BR)GSS): 30V
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U291 U290,U291.pdf
Производитель: Vishay Siliconix
Description: JFET N-CH 30V 0.5W TO-206AC
Power - Max: 500mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Resistance - RDS(On): 7 Ohm
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 1.5V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 200mA @ 10V
Voltage - Breakdown (V(BR)GSS): 30V
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U291-E3 U290,U291.pdf
Производитель: Vishay Siliconix
Description: JFET N-CH 30V 0.5W TO-206AC
Power - Max: 500mW
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Resistance - RDS(On): 7 Ohm
Input Capacitance (Ciss) (Max) @ Vds: 160pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 1.5V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 200mA @ 10V
Voltage - Breakdown (V(BR)GSS): 30V
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U310-E3 J;SST;U308%20Series.pdf
Производитель: Vishay Siliconix
Description: JFET P-CH 25V TO-52
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Power - Max: 500mW
Current - Drain (Idss) @ Vds (Vgs=0): 24mA @ 10V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Voltage - Cutoff (VGS off) @ Id: 2.5V @ 1nA
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AC, TO-52-3 Metal Can
Supplier Device Package: TO-206AC (TO-52)
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под заказ 564 шт - цена и срок поставки
U430 U430,U431.pdf
Производитель: Vishay Siliconix
Description: JFET P-CH 25V TO-78
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
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U430-E3 U430,U431.pdf
Производитель: Vishay Siliconix
Description: JFET DUAL P-CH 25V TO-78
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 12 mA @ 10 V
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U431 U430,U431.pdf
Производитель: Vishay Siliconix
Description: JFET DUAL P-CH 25V TO-78
Packaging: Tube
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 5pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Supplier Device Package: TO-78-6
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 2 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 24 mA @ 10 V
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U440 U440.U441.pdf
Производитель: Vishay Siliconix
Description: JFET DUAL P-CH 25V TO-71
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
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U440-E3 U440.U441.pdf
Производитель: Vishay Siliconix
Description: JFET DUAL P-CH 25V TO-71
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
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U441 U440.U441.pdf
Производитель: Vishay Siliconix
Description: JFET 2N-CH 25V TO-71
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
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под заказ 1759 шт - цена и срок поставки
U441-E3 U440.U441.pdf
Производитель: Vishay Siliconix
Description: JFET 2N-CH 25V TO-71
Packaging: Tube
Package / Case: TO-71-6
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
FET Type: 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds: 3pF @ 10V
Voltage - Breakdown (V(BR)GSS): 25 V
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 6 mA @ 10 V
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2N5545JTX01
Производитель: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Supplier Device Package: TO-71
Package / Case: TO-71-6
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
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2N4856JAN02
Производитель: Vishay Siliconix
Description: MOSFET N-CH 40V 50MA TO-18
Part Status: Obsolete
Packaging: Bulk
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
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2N4857JAN02
Производитель: Vishay Siliconix
Description: JFET N-CH 40V 360MA TO-18
Manufacturer: Vishay Siliconix
Packaging: Tube
Part Status: Obsolete
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Supplier Device Package: TO-206AA (TO-18)
Base Part Number: 2N4857
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2N4858JAN02
Производитель: Vishay Siliconix
Description: JFET N-CH 40V 80MA TO-18
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
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2N4859JAN02 alucapsreach.pdf
Производитель: Vishay Siliconix
Description: JFET N-CH 30V 360MW TO-18
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-206AA (TO-18)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
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2N4860JAN02
Производитель: Vishay Siliconix
Description: JFET N-CH 30V TO-206
Base Part Number: 2N4860
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Packaging: Tube
Part Status: Obsolete
Manufacturer: Vishay Siliconix
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2N5547JTX01
Производитель: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Supplier Device Package: TO-71
Package / Case: TO-71-6
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
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2N4860JTX02
Производитель: Vishay Siliconix
Description: JFET N-CH 30V TO-206
Base Part Number: 2N4860
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
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2N4861JTX02
Производитель: Vishay Siliconix
Description: JFET N-CH 30V TO-206
Base Part Number: 2N4861
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
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2N4861JAN02
Производитель: Vishay Siliconix
Description: JFET N-CH 30V TO-206
Base Part Number: 2N4861
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
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под заказ 100 шт - цена и срок поставки
2N4860JTXL02
Производитель: Vishay Siliconix
Description: JFET N-CH 30V TO-206
Base Part Number: 2N4860
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
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2N4861JTXL02
Производитель: Vishay Siliconix
Description: JFET N-CH 30V TO-206
Base Part Number: 2N4861
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
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2N5547JTXL01
Производитель: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-71
Package / Case: TO-71-6
Mounting Type: Through Hole
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2N5547JTXV01
Производитель: Vishay Siliconix
Description: JFET N-CH 50V TO-71
Package / Case: TO-71-6
Mounting Type: Through Hole
Part Status: Obsolete
Supplier Device Package: TO-71
Packaging: Tube
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2N4416A-2 2N4416,2N4416A.SST4416.pdf
2N4416A-2
Производитель: Vishay Siliconix
Description: MOSFET N-CH 35V 5MA TO-206AF
FET Type: N-Channel
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Power - Max: 300 mW
Part Status: Obsolete
Supplier Device Package: TO-206AF (TO-72)
Voltage - Breakdown (V(BR)GSS): 35 V
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Operating Temperature: -50°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AF, TO-72-4 Metal Can
Packaging: Bulk
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
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2N5432-2 2N5432%20thru%202N5434.pdf
Производитель: Vishay Siliconix
Description: JFET N-CH 25V 0.3W TO-52
Package / Case: TO-206AC, TO-52-3 Metal Can
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 4V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 150mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-206AC (TO-52)
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2N5433-2 2N5432%20thru%202N5434.pdf
Производитель: Vishay Siliconix
Description: JFET N-CH 25V 0.3W TO-52
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Input Capacitance (Ciss) (Max) @ Vds: 30pF @ 0V
Voltage - Cutoff (VGS off) @ Id: 3V @ 3nA
Current - Drain (Idss) @ Vds (Vgs=0): 100mA @ 15V
Voltage - Breakdown (V(BR)GSS): 25V
FET Type: N-Channel
Part Status: Obsolete
Packaging: Tube
Supplier Device Package: TO-206AC (TO-52)
Package / Case: TO-206AC, TO-52-3 Metal Can
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2N4391 2N,PN,SST4391.pdf
Производитель: Vishay Siliconix
Description: MOSFET N-CH 40V .1NA TO-18
Power - Max: 1.8 W
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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под заказ 33313 шт - цена и срок поставки
2N4391-E3 2N,PN,SST4391.pdf
Производитель: Vishay Siliconix
Description: MOSFET N-CH 40V .1NA TO-18
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Power - Max: 1.8 W
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
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под заказ 1016000 шт - цена и срок поставки
2N4860JTXV02
Производитель: Vishay Siliconix
Description: JFET N-CH 30V TO-206
Base Part Number: 2N4860
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
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2N4861JTXV02
Производитель: Vishay Siliconix
Description: JFET N-CH 30V TO-206
Base Part Number: 2N4861
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Tube
Manufacturer: Vishay Siliconix
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2N4391-2 2N,PN,SST4391.pdf
Производитель: Vishay Siliconix
Description: MOSFET N-CH 40V .1NA TO-18
Packaging: Bulk
Operating Temperature: -65°C ~ 200°C (TJ)
Mounting Type: Through Hole
Current - Drain (Idss) @ Vds (Vgs=0): 50 mA @ 20 V
Voltage - Cutoff (VGS off) @ Id: 4 V @ 1 nA
Resistance - RDS(On): 30 Ohms
Power - Max: 1.8 W
Part Status: Obsolete
Supplier Device Package: TO-206AA (TO-18)
Voltage - Breakdown (V(BR)GSS): 40 V
Input Capacitance (Ciss) (Max) @ Vds: 14pF @ 20V
FET Type: N-Channel
Package / Case: TO-206AA, TO-18-3 Metal Can
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2N4856JTX02
Производитель: Vishay Siliconix
Description: MOSFET N-CH 40V 50MA TO-18
Supplier Device Package: TO-206AA (TO-18)
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Part Status: Obsolete
Packaging: Bulk
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