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BCY59 TIN/LEAD BCY59 TIN/LEAD Central Semiconductor Corp Description: 45V 100MA 340MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
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2N4952 TIN/LEAD 2N4952 TIN/LEAD Central Semiconductor Corp Description: 30V 1A 625MW TH TRANSISTOR-SMALL
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2N5059 PBFREE 2N5059 PBFREE Central Semiconductor Corp Description: 250V 150MA 1W TH TRANSISTOR-SMAL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 25V
Frequency - Transition: 160MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 5 W
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2N5059 TIN/LEAD 2N5059 TIN/LEAD Central Semiconductor Corp Description: 250V 150MA 1W TH TRANSISTOR-SMAL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 25V
Frequency - Transition: 160MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 5 W
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TIP3055 TIP3055 Central Semiconductor Corp LSSGP091.PDF Description: TRANS NPN 100V 15A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 90 W
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P6SMB22A BK PBFREE P6SMB22A BK PBFREE Central Semiconductor Corp P6SMB6.8A_200A.PDF Description: 600W 18.8V SMD TRANSIENT VOLTAGE
Packaging: Box
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Power - Peak Pulse: 600W
Power Line Protection: No
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TIP2955 TIP2955 Central Semiconductor Corp LSSGP091.PDF Description: TRANS PNP 100V 15A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 90 W
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1N747A TR PBFREE 1N747A TR PBFREE Central Semiconductor Corp Description: 3.6V 500MW TH DIODE-ZENER SINGLE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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1N747A BK PBFREE 1N747A BK PBFREE Central Semiconductor Corp Description: 3.6V 500MW TH DIODE-ZENER SINGLE
Packaging: Box
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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1N5231B BK TIN/LEAD 1N5231B BK TIN/LEAD Central Semiconductor Corp Description: 5.1V 500MW TH DIODE-ZENER SINGLE
Packaging: Box
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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CUD10-04 TR13 CUD10-04 TR13 Central Semiconductor Corp CUD10-02_04_06_Jan21%2C2013.pdf Description: DIODE STANDARD 400V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 62pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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CMPZDA4V3 TR PBFREE CMPZDA4V3 TR PBFREE Central Semiconductor Corp Description: DIODE ZENER ARRAY 4.3V SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±6.98%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
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P6SMB250A TR13 PBFREE P6SMB250A TR13 PBFREE Central Semiconductor Corp P6SMB6.8A_200A.PDF Description: 600W 214V SMD TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237.5V
Power - Peak Pulse: 600W
Power Line Protection: No
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PN3638A APP PBFREE Central Semiconductor Corp LSSGP076.PDF Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
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PN3638A TRC PBFREE Central Semiconductor Corp Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 25 V
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PN3638A PBFREE PN3638A PBFREE Central Semiconductor Corp Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
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PN3638A APM PBFREE PN3638A APM PBFREE Central Semiconductor Corp LSSGP076.PDF Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
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PN3638A TRE PBFREE PN3638A TRE PBFREE Central Semiconductor Corp Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
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PN3638A APP TIN/LEAD Central Semiconductor Corp LSSGP076.PDF Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
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PN3638A TRC TIN/LEAD Central Semiconductor Corp Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 25 V
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PN3638A TIN/LEAD PN3638A TIN/LEAD Central Semiconductor Corp Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
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P6SMB33CA TR13 PBFREE P6SMB33CA TR13 PBFREE Central Semiconductor Corp P6SMB6.8CA_200CA.PDF Description: 600W 28.2V SMD TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
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2N4289 PBFREE 2N4289 PBFREE Central Semiconductor Corp Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 350mV
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 45 V
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2N4287 PBFREE 2N4287 PBFREE Central Semiconductor Corp Description: 45V 50MA 360MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
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2N4289 TIN/LEAD 2N4289 TIN/LEAD Central Semiconductor Corp Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 350mV
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 45 V
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2N4287 TIN/LEAD 2N4287 TIN/LEAD Central Semiconductor Corp Description: 45V 50MA 360MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
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TIP35C TIP35C Central Semiconductor Corp TIP35.PDF Description: TRANS NPN 100V 25A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
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TIP142 TIP142 Central Semiconductor Corp LSSGP091.PDF Description: TRANS NPN 100V 10A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
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CMDSH-3 TR Central Semiconductor Corp DIODE SCHOTTKY 30V 100MA SOD323
на замовлення 10 шт:
термін постачання 5 дні (днів)
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CMDSH05-4 Central Semiconductor Corp SOD323
на замовлення 10 шт:
термін постачання 5 дні (днів)
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BCY59 TIN/LEAD
BCY59 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 45V 100MA 340MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 2.5mA, 100mA
Current - Collector Cutoff (Max): 10nA (ICBO)
Frequency - Transition: 150MHz
Supplier Device Package: TO-18
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 340 mW
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2N4952 TIN/LEAD
2N4952 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 30V 1A 625MW TH TRANSISTOR-SMALL
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 1A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 250MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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2N5059 PBFREE
2N5059 PBFREE
Виробник: Central Semiconductor Corp
Description: 250V 150MA 1W TH TRANSISTOR-SMAL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 25V
Frequency - Transition: 160MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 5 W
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2N5059 TIN/LEAD
2N5059 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 250V 150MA 1W TH TRANSISTOR-SMAL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 3mA, 30mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 25V
Frequency - Transition: 160MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 5 W
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TIP3055 LSSGP091.PDF
TIP3055
Виробник: Central Semiconductor Corp
Description: TRANS NPN 100V 15A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 90 W
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P6SMB22A BK PBFREE P6SMB6.8A_200A.PDF
P6SMB22A BK PBFREE
Виробник: Central Semiconductor Corp
Description: 600W 18.8V SMD TRANSIENT VOLTAGE
Packaging: Box
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 20A
Voltage - Reverse Standoff (Typ): 18.8V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 20.9V
Power - Peak Pulse: 600W
Power Line Protection: No
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TIP2955 LSSGP091.PDF
TIP2955
Виробник: Central Semiconductor Corp
Description: TRANS PNP 100V 15A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 90 W
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1N747A TR PBFREE
1N747A TR PBFREE
Виробник: Central Semiconductor Corp
Description: 3.6V 500MW TH DIODE-ZENER SINGLE
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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1N747A BK PBFREE
1N747A BK PBFREE
Виробник: Central Semiconductor Corp
Description: 3.6V 500MW TH DIODE-ZENER SINGLE
Packaging: Box
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
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1N5231B BK TIN/LEAD
1N5231B BK TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 5.1V 500MW TH DIODE-ZENER SINGLE
Packaging: Box
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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CUD10-04 TR13 CUD10-02_04_06_Jan21%2C2013.pdf
CUD10-04 TR13
Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 400V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 62pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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CMPZDA4V3 TR PBFREE
CMPZDA4V3 TR PBFREE
Виробник: Central Semiconductor Corp
Description: DIODE ZENER ARRAY 4.3V SOT-23
Packaging: Tape & Reel (TR)
Tolerance: ±6.98%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
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P6SMB250A TR13 PBFREE P6SMB6.8A_200A.PDF
P6SMB250A TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: 600W 214V SMD TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237.5V
Power - Peak Pulse: 600W
Power Line Protection: No
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PN3638A APP PBFREE LSSGP076.PDF
Виробник: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
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PN3638A TRC PBFREE
Виробник: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 25 V
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PN3638A PBFREE
PN3638A PBFREE
Виробник: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
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PN3638A APM PBFREE LSSGP076.PDF
PN3638A APM PBFREE
Виробник: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
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PN3638A TRE PBFREE
PN3638A TRE PBFREE
Виробник: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
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PN3638A APP TIN/LEAD LSSGP076.PDF
Виробник: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
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PN3638A TRC TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 25 V
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PN3638A TIN/LEAD
PN3638A TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
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P6SMB33CA TR13 PBFREE P6SMB6.8CA_200CA.PDF
P6SMB33CA TR13 PBFREE
Виробник: Central Semiconductor Corp
Description: 600W 28.2V SMD TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
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2N4289 PBFREE
2N4289 PBFREE
Виробник: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 350mV
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 45 V
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2N4287 PBFREE
2N4287 PBFREE
Виробник: Central Semiconductor Corp
Description: 45V 50MA 360MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
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2N4289 TIN/LEAD
2N4289 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 350mV
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 45 V
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2N4287 TIN/LEAD
2N4287 TIN/LEAD
Виробник: Central Semiconductor Corp
Description: 45V 50MA 360MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
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TIP35C TIP35.PDF
TIP35C
Виробник: Central Semiconductor Corp
Description: TRANS NPN 100V 25A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
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TIP142 LSSGP091.PDF
TIP142
Виробник: Central Semiconductor Corp
Description: TRANS NPN 100V 10A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
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CMDSH-3 TR
Виробник: Central Semiconductor Corp
DIODE SCHOTTKY 30V 100MA SOD323
на замовлення 10 шт:
термін постачання 5 дні (днів)
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CMDSH05-4
Виробник: Central Semiconductor Corp
SOD323
на замовлення 10 шт:
термін постачання 5 дні (днів)
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