Продукція > CENTRAL SEMICONDUCTOR CORP > Всі товари виробника CENTRAL SEMICONDUCTOR CORP (7952) > Сторінка 132 з 133
| Фото | Назва | Виробник | Інформація |
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CUD10-04 TR13 | Central Semiconductor Corp |
 Description: DIODE STANDARD 400V 10A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Technology: Standard Capacitance @ Vr, F: 62pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CMPZDA4V3 TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER ARRAY 4.3V SOT-23 Tolerance: ±6.98% Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Configuration: 1 Pair Common Anode Operating Temperature: -65°C ~ 175°C (TJ) Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 90 Ohms Supplier Device Package: SOT-23 Power - Max: 350 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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P6SMB250A TR13 PBFREE | Central Semiconductor Corp |
Description: 600W 214V SMD TRANSIENT VOLTAGE Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 1.7A Voltage - Reverse Standoff (Typ): 214V Supplier Device Package: SMB Unidirectional Channels: 1 Voltage - Breakdown (Min): 237.5V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| PN3638A APP PBFREE | Central Semiconductor Corp |
Description: 25V 800MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 35nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PN3638A TRC PBFREE | Central Semiconductor Corp |
Description: 25V 800MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 35nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92 Voltage - Collector Emitter Breakdown (Max): 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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PN3638A PBFREE | Central Semiconductor Corp |
Description: 25V 800MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 35nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Voltage - Collector Emitter Breakdown (Max): 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PN3638A APM PBFREE | Central Semiconductor Corp |
Description: 25V 800MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 35nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Voltage - Collector Emitter Breakdown (Max): 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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PN3638A TRE PBFREE | Central Semiconductor Corp |
Description: 25V 800MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 35nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Voltage - Collector Emitter Breakdown (Max): 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| PN3638A APP TIN/LEAD | Central Semiconductor Corp |
Description: 25V 800MA 625MW TH TRANSISTOR-SM Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 35nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
| PN3638A TRC TIN/LEAD | Central Semiconductor Corp |
Description: 25V 800MA 625MW TH TRANSISTOR-SM Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 35nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92 Voltage - Collector Emitter Breakdown (Max): 25 V |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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PN3638A TIN/LEAD | Central Semiconductor Corp |
Description: 25V 800MA 625MW TH TRANSISTOR-SM Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 35nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Voltage - Collector Emitter Breakdown (Max): 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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P6SMB33CA TR13 PBFREE | Central Semiconductor Corp |
Description: 600W 28.2V SMD TRANSIENT VOLTAGE Packaging: Tape & Reel (TR) Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 13.2A Voltage - Reverse Standoff (Typ): 28.2V Supplier Device Package: SMB Bidirectional Channels: 1 Voltage - Breakdown (Min): 31.4V Voltage - Clamping (Max) @ Ipp: 45.7V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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2N4289 PBFREE | Central Semiconductor Corp |
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 350mV Frequency - Transition: 40MHz Supplier Device Package: TO-92-3 Voltage - Collector Emitter Breakdown (Max): 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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2N4287 PBFREE | Central Semiconductor Corp |
Description: 45V 50MA 360MW TH TRANSISTOR-SMA Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Frequency - Transition: 40MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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2N4289 TIN/LEAD | Central Semiconductor Corp |
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 350mV Frequency - Transition: 40MHz Supplier Device Package: TO-92-3 Voltage - Collector Emitter Breakdown (Max): 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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2N4287 TIN/LEAD | Central Semiconductor Corp |
Description: 45V 50MA 360MW TH TRANSISTOR-SMA Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V Frequency - Transition: 40MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 45 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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2N3053 TIN/LEAD | Central Semiconductor Corp |
Description: 40V 700MA 5W TH TRANSISTOR-SMALL Packaging: Box Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V Frequency - Transition: 100MHz Supplier Device Package: TO-39 Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 5 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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2N1613 TIN/LEAD | Central Semiconductor Corp |
Description: 500MA 800MW TH TRANSISTOR-SMALL Packaging: Box Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Frequency - Transition: 60MHz Supplier Device Package: TO-39 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 3 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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1N5261B TR TIN/LEAD | Central Semiconductor Corp |
Description: 47V 500MW TH DIODE-ZENER SINGLE: Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 105 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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1N5261B BK TIN/LEAD | Central Semiconductor Corp |
Description: 47V 500MW TH DIODE-ZENER SINGLE: Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 105 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 36 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CMDSH-3G TR PBFREE | Central Semiconductor Corp |
Description: DIODE SCHOTTKY 30V 100MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 7pF @ 1V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CMDSH-3G TR TIN/LEAD | Central Semiconductor Corp |
Description: DIODE SCHOTTKY 30V 100MA SOD323 Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 7pF @ 1V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CMDSH-3G BK PBFREE | Central Semiconductor Corp |
Description: DIODE SCHOTTKY 30V 100MA SOD323 Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 7pF @ 1V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CMDSH-3G BK TIN/LEAD | Central Semiconductor Corp |
Description: DIODE SCHOTTKY 30V 100MA SOD323 Packaging: Bulk Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Capacitance @ Vr, F: 7pF @ 1V, 1MHz Current - Average Rectified (Io): 100mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TIP120 | Central Semiconductor Corp |
Description: TRANS NPN DARL 60V TO-220-3 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V Frequency - Transition: 4MHz Supplier Device Package: TO-220-3 Voltage - Collector Emitter Breakdown (Max): 60 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| 2N5194 | Central Semiconductor Corp |
Description: TRANS PNP 60V 4A TO-126 Packaging: Bulk Package / Case: TO-225AA, TO-126-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V Frequency - Transition: 2MHz Supplier Device Package: TO-126 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 40 W |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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MPSL01 PBFREE | Central Semiconductor Corp |
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 60MHz Supplier Device Package: TO-92-3 Voltage - Collector Emitter Breakdown (Max): 120 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MPSL51 PBFREE | Central Semiconductor Corp |
Description: 100V 600MA 625MW TH TRANSISTOR-S Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Frequency - Transition: 60MHz Supplier Device Package: TO-92-3 Voltage - Collector Emitter Breakdown (Max): 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MPSL01 TIN/LEAD | Central Semiconductor Corp |
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Frequency - Transition: 60MHz Supplier Device Package: TO-92-3 Voltage - Collector Emitter Breakdown (Max): 120 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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MPSL51 TIN/LEAD | Central Semiconductor Corp |
Description: 100V 600MA 625MW TH TRANSISTOR-S Packaging: Box Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V Frequency - Transition: 60MHz Supplier Device Package: TO-92-3 Voltage - Collector Emitter Breakdown (Max): 100 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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3SMC40CA-TM TR13 TIN/LEAD | Central Semiconductor Corp |
Description: TRANSIENT VOLTAGE SUPPRESSOR Packaging: Tape & Reel (TR) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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3SMC40CA-TM TR13 TIN/LEAD | Central Semiconductor Corp |
Description: TRANSIENT VOLTAGE SUPPRESSOR Packaging: Cut Tape (CT) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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P6KE220CA TR PBFREE | Central Semiconductor Corp |
Description: 600W 185V TH TRANSIENT VOLTAGE S Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2A Voltage - Reverse Standoff (Typ): 185V Supplier Device Package: DO-15 Bidirectional Channels: 1 Voltage - Breakdown (Min): 209V Voltage - Clamping (Max) @ Ipp: 328V Power - Peak Pulse: 600W Power Line Protection: No |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CSHDD16-40C TR13 PBFREE | Central Semiconductor Corp |
Description: 16A 40V SMD RECTIFIER-SCHOTTKY ( Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 16A Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A Current - Reverse Leakage @ Vr: 50 µA @ 40 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| 2N6427 TRE PBFREE | Central Semiconductor Corp |
Description: 500MA 40V TH TRANSISTOR-SMALL SI Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 130MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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2N6426 TRE PBFREE | Central Semiconductor Corp |
Description: 500MA 40V TH TRANSISTOR-SMALL SI Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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2N6426 TRA PBFREE | Central Semiconductor Corp |
Description: 500MA 40V TH TRANSISTOR-SMALL SI Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500µA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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2N6426 APM PBFREE | Central Semiconductor Corp |
Description: 500MA 40V TH TRANSISTOR-SMALL SI Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 150°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
| 2N6426 APP PBFREE | Central Semiconductor Corp |
Description: 500MA 40V TH TRANSISTOR-SMALL SI Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN - Darlington Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500µA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 500mA, 5V Frequency - Transition: 150MHz Supplier Device Package: TO-92 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||||
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2N6427 APM PBFREE | Central Semiconductor Corp |
Description: 500MA 40V TH TRANSISTOR-SMALL SI Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN - Darlington DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V Frequency - Transition: 130MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 625 mW |
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В кошику од. на суму грн. | ||||||
 |
TIP35C | Central Semiconductor Corp |
Description: TRANS NPN 100V 25A TO-218 Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-218 Current - Collector (Ic) (Max): 25 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 125 W |
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В кошику од. на суму грн. | ||||||
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CMLM0585 TR PBFREE | Central Semiconductor Corp |
Description: SMD MODULE 650MA 20V P-CHANNEL M Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 16 V |
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В кошику од. на суму грн. | ||||||
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CMLM0575 TR PBFREE | Central Semiconductor Corp |
Description: SMD MODULE 650MA 20V N-CHANNEL M Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 650mA (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-563 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 16 V |
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В кошику од. на суму грн. | ||||||
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CMLM0584 TR PBFREE | Central Semiconductor Corp |
Description: SMD MODULE 450MA 30V P-CHANNEL M Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 450mA Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 880 pC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V |
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В кошику од. на суму грн. | ||||||
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CMLM0574 TR PBFREE | Central Semiconductor Corp |
Description: SMD MODULE 450MA 30V N-CHANNEL M Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 450mA (Ta) Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): 8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 792 pC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V |
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В кошику од. на суму грн. | ||||||
 |
2N4416A | Central Semiconductor Corp |
Description: JFET N-CH 35V TO72 Packaging: Bulk Package / Case: TO-206AF, TO-72-4 Metal Can Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V Voltage - Breakdown (V(BR)GSS): 35 V Supplier Device Package: TO-72 Drain to Source Voltage (Vdss): 35 V Power - Max: 300 mW Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V |
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В кошику од. на суму грн. | ||||||
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1N5246B BK TIN/LEAD | Central Semiconductor Corp |
Description: 16V 500MW TH DIODE-ZENER SINGLE: Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 17 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 12 V |
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В кошику од. на суму грн. | ||||||
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1N4700 TR TIN/LEAD | Central Semiconductor Corp |
Description: 13V 500MW TH DIODE-ZENER SINGLE: Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 13 V Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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1N4700 BK TIN/LEAD | Central Semiconductor Corp |
Description: 13V 500MW TH DIODE-ZENER SINGLE: Tolerance: ±5% Packaging: Box Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 13 V Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V |
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В кошику од. на суму грн. | ||||||
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TIP147 | Central Semiconductor Corp |
Description: TRANS PNP 100V 10A TO-218 Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Supplier Device Package: TO-218 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 125 W |
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В кошику од. на суму грн. | ||||||
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CMDZ47L TR PBFREE | Central Semiconductor Corp |
Description: 47V 250MW SMD DIODE-ZENER SINGLE Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Voltage - Zener (Nom) (Vz): 47 V Impedance (Max) (Zzt): 450 Ohms Supplier Device Package: SOD-323 Power - Max: 250 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 1 µA @ 44 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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TIP3055 | Central Semiconductor Corp |
Description: TRANS NPN 100V 15A TO-218 Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-218 Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 90 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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2N2325 PBFREE | Central Semiconductor Corp |
Description: SCR 150V 1.6A TO-39 Packaging: Box Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Current - On State (It (AV)) (Max): 1 A Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.5 V Current - Off State (Max): 5 µA Supplier Device Package: TO-39 Current - On State (It (RMS)) (Max): 1.6 A Voltage - Off State: 150 V |
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В кошику од. на суму грн. | ||||||
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2N2325 TIN/LEAD | Central Semiconductor Corp |
Description: SCR 150V 1.6A TO-39 Packaging: Box Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole SCR Type: Standard Recovery Operating Temperature: -65°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 2 mA Current - Gate Trigger (Igt) (Max): 200 µA Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz Current - On State (It (AV)) (Max): 1 A Voltage - Gate Trigger (Vgt) (Max): 800 mV Voltage - On State (Vtm) (Max): 1.5 V Current - Off State (Max): 5 µA Supplier Device Package: TO-39 Current - On State (It (RMS)) (Max): 1.6 A Voltage - Off State: 150 V |
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В кошику од. на суму грн. | ||||||
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CZ5359B BK PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 24V 5W DO201 Tolerance: ±5% Packaging: Bulk Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Operating Temperature: -60°C ~ 200°C Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-201 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V |
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В кошику од. на суму грн. | ||||||
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CZ5359B TR TIN/LEAD | Central Semiconductor Corp |
Description: 24V 5W TH DIODE-ZENER SINGLE: PO Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-201 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V |
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В кошику од. на суму грн. | ||||||
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CZ5359B BK TIN/LEAD | Central Semiconductor Corp |
Description: 24V 5W TH DIODE-ZENER SINGLE: PO Tolerance: ±5% Packaging: Box Package / Case: DO-201AA, DO-27, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C (TJ) Voltage - Zener (Nom) (Vz): 24 V Impedance (Max) (Zzt): 3.5 Ohms Supplier Device Package: DO-201 Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V |
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В кошику од. на суму грн. | ||||||
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2N2270 TIN/LEAD | Central Semiconductor Corp |
Description: 45V 1A 1W TH TRANSISTOR-SMALL SI Packaging: Box Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 900mV @ 15mA, 150mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V Frequency - Transition: 100MHz Supplier Device Package: TO-39 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 1 W |
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В кошику од. на суму грн. | ||||||
 |
CMSZ5245B BK PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 15V 275MW SOT323 Tolerance: ±5% Packaging: Bulk Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: SOT-323 Power - Max: 275 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 11 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||
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CMSZ5245B TR PBFREE | Central Semiconductor Corp |
Description: DIODE ZENER 15V 275MW SOT323 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: SOT-323 Power - Max: 275 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 11 V |
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В кошику од. на суму грн. |
| CUD10-04 TR13 |
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Виробник: Central Semiconductor Corp
Description: DIODE STANDARD 400V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 62pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: DIODE STANDARD 400V 10A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 62pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DPAK
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 10 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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| CMPZDA4V3 TR PBFREE |
Виробник: Central Semiconductor Corp
Description: DIODE ZENER ARRAY 4.3V SOT-23
Tolerance: ±6.98%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE ZENER ARRAY 4.3V SOT-23
Tolerance: ±6.98%
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Configuration: 1 Pair Common Anode
Operating Temperature: -65°C ~ 175°C (TJ)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: SOT-23
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
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В кошику
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| P6SMB250A TR13 PBFREE |
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Виробник: Central Semiconductor Corp
Description: 600W 214V SMD TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237.5V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: 600W 214V SMD TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.7A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: SMB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237.5V
Power - Peak Pulse: 600W
Power Line Protection: No
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В кошику
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| PN3638A APP PBFREE |
|
Виробник: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
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| PN3638A TRC PBFREE |
Виробник: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 25 V
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| PN3638A PBFREE |
Виробник: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
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| PN3638A APM PBFREE |
|
Виробник: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
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| PN3638A TRE PBFREE |
Виробник: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
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| PN3638A APP TIN/LEAD |
|
Виробник: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 25 V
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| PN3638A TRC TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Voltage - Collector Emitter Breakdown (Max): 25 V
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| PN3638A TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
Description: 25V 800MA 625MW TH TRANSISTOR-SM
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 35nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 1V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 25 V
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| P6SMB33CA TR13 PBFREE |
|
Виробник: Central Semiconductor Corp
Description: 600W 28.2V SMD TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: 600W 28.2V SMD TRANSIENT VOLTAGE
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 13.2A
Voltage - Reverse Standoff (Typ): 28.2V
Supplier Device Package: SMB
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 600W
Power Line Protection: No
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| 2N4289 PBFREE |
Виробник: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 350mV
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 45 V
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 350mV
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 45 V
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| 2N4287 PBFREE |
Виробник: Central Semiconductor Corp
Description: 45V 50MA 360MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Description: 45V 50MA 360MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
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| 2N4289 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 350mV
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 45 V
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 350mV
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 45 V
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| 2N4287 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 45V 50MA 360MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Description: 45V 50MA 360MW TH TRANSISTOR-SMA
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
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| 2N3053 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 40V 700MA 5W TH TRANSISTOR-SMALL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 5 W
Description: 40V 700MA 5W TH TRANSISTOR-SMALL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 15mA, 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 5 W
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| 2N1613 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 500MA 800MW TH TRANSISTOR-SMALL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
Description: 500MA 800MW TH TRANSISTOR-SMALL
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 15mA, 150mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Frequency - Transition: 60MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
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| 1N5261B TR TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 47V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 105 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Description: 47V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 105 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
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| 1N5261B BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 47V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 105 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
Description: 47V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 105 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 36 V
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| CMDSH-3G TR PBFREE |
Виробник: Central Semiconductor Corp
Description: DIODE SCHOTTKY 30V 100MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Description: DIODE SCHOTTKY 30V 100MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
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| CMDSH-3G TR TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: DIODE SCHOTTKY 30V 100MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Description: DIODE SCHOTTKY 30V 100MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
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| CMDSH-3G BK PBFREE |
Виробник: Central Semiconductor Corp
Description: DIODE SCHOTTKY 30V 100MA SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Description: DIODE SCHOTTKY 30V 100MA SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
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| CMDSH-3G BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: DIODE SCHOTTKY 30V 100MA SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
Description: DIODE SCHOTTKY 30V 100MA SOD323
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 1V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 25 V
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| TIP120 |
|
Виробник: Central Semiconductor Corp
Description: TRANS NPN DARL 60V TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Voltage - Collector Emitter Breakdown (Max): 60 V
Description: TRANS NPN DARL 60V TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 20mA, 5A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 3A, 3V
Frequency - Transition: 4MHz
Supplier Device Package: TO-220-3
Voltage - Collector Emitter Breakdown (Max): 60 V
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| 2N5194 |
|
Виробник: Central Semiconductor Corp
Description: TRANS PNP 60V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
Description: TRANS PNP 60V 4A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.4V @ 1A, 4A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1.5A, 2V
Frequency - Transition: 2MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 40 W
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| MPSL01 PBFREE |
|
Виробник: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 120 V
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 120 V
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| MPSL51 PBFREE |
|
Виробник: Central Semiconductor Corp
Description: 100V 600MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 100 V
Description: 100V 600MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 100 V
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| MPSL01 TIN/LEAD |
|
Виробник: Central Semiconductor Corp
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 120 V
Description: TH TRANSISTOR-SMALL SIGNAL (<=1A
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 120 V
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| MPSL51 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 100V 600MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 100 V
Description: 100V 600MA 625MW TH TRANSISTOR-S
Packaging: Box
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 5V
Frequency - Transition: 60MHz
Supplier Device Package: TO-92-3
Voltage - Collector Emitter Breakdown (Max): 100 V
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| 3SMC40CA-TM TR13 TIN/LEAD |
|
Виробник: Central Semiconductor Corp
Description: TRANSIENT VOLTAGE SUPPRESSOR
Packaging: Tape & Reel (TR)
Description: TRANSIENT VOLTAGE SUPPRESSOR
Packaging: Tape & Reel (TR)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 311.31 грн |
| 3SMC40CA-TM TR13 TIN/LEAD |
|
Виробник: Central Semiconductor Corp
Description: TRANSIENT VOLTAGE SUPPRESSOR
Packaging: Cut Tape (CT)
Description: TRANSIENT VOLTAGE SUPPRESSOR
Packaging: Cut Tape (CT)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 684.76 грн |
| 10+ | 452.87 грн |
| 100+ | 366.93 грн |
| P6KE220CA TR PBFREE |
Виробник: Central Semiconductor Corp
Description: 600W 185V TH TRANSIENT VOLTAGE S
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-15
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
Description: 600W 185V TH TRANSIENT VOLTAGE S
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2A
Voltage - Reverse Standoff (Typ): 185V
Supplier Device Package: DO-15
Bidirectional Channels: 1
Voltage - Breakdown (Min): 209V
Voltage - Clamping (Max) @ Ipp: 328V
Power - Peak Pulse: 600W
Power Line Protection: No
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| CSHDD16-40C TR13 PBFREE |
Виробник: Central Semiconductor Corp
Description: 16A 40V SMD RECTIFIER-SCHOTTKY (
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Description: 16A 40V SMD RECTIFIER-SCHOTTKY (
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 16A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
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| 2N6427 TRE PBFREE |
|
Виробник: Central Semiconductor Corp
Description: 500MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 500MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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| 2N6426 TRE PBFREE |
Виробник: Central Semiconductor Corp
Description: 500MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 500MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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| 2N6426 TRA PBFREE |
Виробник: Central Semiconductor Corp
Description: 500MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500µA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 500MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500µA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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| 2N6426 APM PBFREE |
Виробник: Central Semiconductor Corp
Description: 500MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 500MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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| 2N6426 APP PBFREE |
Виробник: Central Semiconductor Corp
Description: 500MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500µA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 500MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500µA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: TO-92
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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| 2N6427 APM PBFREE |
Виробник: Central Semiconductor Corp
Description: 500MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Description: 500MA 40V TH TRANSISTOR-SMALL SI
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
DC Current Gain (hFE) (Min) @ Ic, Vce: 20000 @ 100mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
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| TIP35C |
|
Виробник: Central Semiconductor Corp
Description: TRANS NPN 100V 25A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
Description: TRANS NPN 100V 25A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 15A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
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| CMLM0585 TR PBFREE |
Виробник: Central Semiconductor Corp
Description: SMD MODULE 650MA 20V P-CHANNEL M
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 16 V
Description: SMD MODULE 650MA 20V P-CHANNEL M
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 360mOhm @ 350mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 16 V
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| CMLM0575 TR PBFREE |
|
Виробник: Central Semiconductor Corp
Description: SMD MODULE 650MA 20V N-CHANNEL M
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-563
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 16 V
Description: SMD MODULE 650MA 20V N-CHANNEL M
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-563
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.58 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 16 V
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| CMLM0584 TR PBFREE |
Виробник: Central Semiconductor Corp
Description: SMD MODULE 450MA 30V P-CHANNEL M
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 880 pC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V
Description: SMD MODULE 450MA 30V P-CHANNEL M
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 430mA, 4.5V
Power Dissipation (Max): 350mW (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 880 pC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 25 V
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| CMLM0574 TR PBFREE |
|
Виробник: Central Semiconductor Corp
Description: SMD MODULE 450MA 30V N-CHANNEL M
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 792 pC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
Description: SMD MODULE 450MA 30V N-CHANNEL M
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 450mA (Ta)
Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): 8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 792 pC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
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| 2N4416A |
|
Виробник: Central Semiconductor Corp
Description: JFET N-CH 35V TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-72
Drain to Source Voltage (Vdss): 35 V
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
Description: JFET N-CH 35V TO72
Packaging: Bulk
Package / Case: TO-206AF, TO-72-4 Metal Can
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 15V
Voltage - Breakdown (V(BR)GSS): 35 V
Supplier Device Package: TO-72
Drain to Source Voltage (Vdss): 35 V
Power - Max: 300 mW
Voltage - Cutoff (VGS off) @ Id: 2.5 V @ 1 nA
Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V
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| 1N5246B BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 16V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
Description: 16V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
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| 1N4700 TR TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 13V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
Description: 13V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
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| 1N4700 BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 13V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
Description: 13V 500MW TH DIODE-ZENER SINGLE:
Tolerance: ±5%
Packaging: Box
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 13 V
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.8 V
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| TIP147 |
|
Виробник: Central Semiconductor Corp
Description: TRANS PNP 100V 10A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
Description: TRANS PNP 100V 10A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 125 W
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| CMDZ47L TR PBFREE |
Виробник: Central Semiconductor Corp
Description: 47V 250MW SMD DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: SOD-323
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 44 V
Description: 47V 250MW SMD DIODE-ZENER SINGLE
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 450 Ohms
Supplier Device Package: SOD-323
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 44 V
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| TIP3055 |
|
Виробник: Central Semiconductor Corp
Description: TRANS NPN 100V 15A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 90 W
Description: TRANS NPN 100V 15A TO-218
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 90 W
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| 2N2325 PBFREE |
Виробник: Central Semiconductor Corp
Description: SCR 150V 1.6A TO-39
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-39
Current - On State (It (RMS)) (Max): 1.6 A
Voltage - Off State: 150 V
Description: SCR 150V 1.6A TO-39
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-39
Current - On State (It (RMS)) (Max): 1.6 A
Voltage - Off State: 150 V
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| 2N2325 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: SCR 150V 1.6A TO-39
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-39
Current - On State (It (RMS)) (Max): 1.6 A
Voltage - Off State: 150 V
Description: SCR 150V 1.6A TO-39
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -65°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 2 mA
Current - Gate Trigger (Igt) (Max): 200 µA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15A @ 60Hz
Current - On State (It (AV)) (Max): 1 A
Voltage - Gate Trigger (Vgt) (Max): 800 mV
Voltage - On State (Vtm) (Max): 1.5 V
Current - Off State (Max): 5 µA
Supplier Device Package: TO-39
Current - On State (It (RMS)) (Max): 1.6 A
Voltage - Off State: 150 V
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| CZ5359B BK PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 24V 5W DO201
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -60°C ~ 200°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-201
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
Description: DIODE ZENER 24V 5W DO201
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -60°C ~ 200°C
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-201
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
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| CZ5359B TR TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 24V 5W TH DIODE-ZENER SINGLE: PO
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-201
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
Description: 24V 5W TH DIODE-ZENER SINGLE: PO
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-201
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
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| CZ5359B BK TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 24V 5W TH DIODE-ZENER SINGLE: PO
Tolerance: ±5%
Packaging: Box
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-201
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
Description: 24V 5W TH DIODE-ZENER SINGLE: PO
Tolerance: ±5%
Packaging: Box
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 3.5 Ohms
Supplier Device Package: DO-201
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 18.2 V
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| 2N2270 TIN/LEAD |
Виробник: Central Semiconductor Corp
Description: 45V 1A 1W TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
Description: 45V 1A 1W TH TRANSISTOR-SMALL SI
Packaging: Box
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 150mA, 10V
Frequency - Transition: 100MHz
Supplier Device Package: TO-39
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 1 W
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| CMSZ5245B BK PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 15V 275MW SOT323
Tolerance: ±5%
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOT-323
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Description: DIODE ZENER 15V 275MW SOT323
Tolerance: ±5%
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOT-323
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
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| CMSZ5245B TR PBFREE |
|
Виробник: Central Semiconductor Corp
Description: DIODE ZENER 15V 275MW SOT323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOT-323
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Description: DIODE ZENER 15V 275MW SOT323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: SOT-323
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
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