Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78492) > Сторінка 210 з 1309
Фото | Назва | Виробник | Інформація |
Доступність |
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DXT790AP5-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Frequency - Transition: 100MHz Supplier Device Package: PowerDI™ 5 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 3.2 W |
на замовлення 100000 шт: термін постачання 21-31 дні (днів) |
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ZXMP6A17N8TC | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DMN6068SE-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V |
на замовлення 16000 шт: термін постачання 21-31 дні (днів) |
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ZXTN617MATA | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V Frequency - Transition: 120MHz Supplier Device Package: DFN2020B-3 Part Status: Active Current - Collector (Ic) (Max): 4.5 A Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 1.5 W |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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DMN6068SE-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V |
на замовлення 18508 шт: термін постачання 21-31 дні (днів) |
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DXT2012P5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 5A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Frequency - Transition: 120MHz Supplier Device Package: PowerDI™ 5 Current - Collector (Ic) (Max): 5.5 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 3.2 W |
на замовлення 5164 шт: термін постачання 21-31 дні (днів) |
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DXT2013P5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Frequency - Transition: 125MHz Supplier Device Package: PowerDI™ 5 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 3.2 W |
на замовлення 204295 шт: термін постачання 21-31 дні (днів) |
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DXT2014P5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Frequency - Transition: 120MHz Supplier Device Package: PowerDI™ 5 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 3.2 W |
на замовлення 206689 шт: термін постачання 21-31 дні (днів) |
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DXT458P5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Frequency - Transition: 50MHz Supplier Device Package: PowerDI™ 5 Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 2.8 W |
на замовлення 474390 шт: термін постачання 21-31 дні (днів) |
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DXT5551P5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 130MHz Supplier Device Package: PowerDI™ 5 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 2.25 W |
на замовлення 293491 шт: термін постачання 21-31 дні (днів) |
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DXT690BP5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V Frequency - Transition: 150MHz Supplier Device Package: PowerDI™ 5 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 740 mW |
на замовлення 621 шт: термін постачання 21-31 дні (днів) |
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DXT790AP5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Frequency - Transition: 100MHz Supplier Device Package: PowerDI™ 5 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 3.2 W |
на замовлення 107449 шт: термін постачання 21-31 дні (днів) |
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ZXMP6A17N8TC | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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ZXTN617MATA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V Frequency - Transition: 120MHz Supplier Device Package: DFN2020B-3 Part Status: Active Current - Collector (Ic) (Max): 4.5 A Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 1.5 W |
на замовлення 10221 шт: термін постачання 21-31 дні (днів) |
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ZXTN618MATA | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V Frequency - Transition: 140MHz Supplier Device Package: DFN2020B-3 Part Status: Active Current - Collector (Ic) (Max): 4.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.5 W |
на замовлення 267000 шт: термін постачання 21-31 дні (днів) |
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ZXTN619MATA | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 165MHz Supplier Device Package: DFN2020B-3 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 3 W |
на замовлення 3855000 шт: термін постачання 21-31 дні (днів) |
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ZXTN620MATA | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V Frequency - Transition: 160MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 3.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 3 W |
на замовлення 417000 шт: термін постачання 21-31 дні (днів) |
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ZXTP718MATA | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V Frequency - Transition: 180MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 3.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 3 W |
на замовлення 102000 шт: термін постачання 21-31 дні (днів) |
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ZXTP720MATA | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V Frequency - Transition: 190MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 3 W |
на замовлення 897000 шт: термін постачання 21-31 дні (днів) |
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ZXTP722MATA | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V Frequency - Transition: 180MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 70 V Power - Max: 3 W |
на замовлення 888000 шт: термін постачання 21-31 дні (днів) |
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ZXTP749FTA | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 725 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DXTP19020DP5-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 176MHz Supplier Device Package: PowerDI™ 5 Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 3 W |
на замовлення 55000 шт: термін постачання 21-31 дні (днів) |
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DXTP19020DP5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 176MHz Supplier Device Package: PowerDI™ 5 Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 3 W |
на замовлення 58833 шт: термін постачання 21-31 дні (днів) |
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ZXTN618MATA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V Frequency - Transition: 140MHz Supplier Device Package: DFN2020B-3 Part Status: Active Current - Collector (Ic) (Max): 4.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.5 W |
на замовлення 269984 шт: термін постачання 21-31 дні (днів) |
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ZXTN619MATA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 165MHz Supplier Device Package: DFN2020B-3 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 3 W |
на замовлення 3870959 шт: термін постачання 21-31 дні (днів) |
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ZXTN620MATA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V Frequency - Transition: 160MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 3.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 3 W |
на замовлення 419965 шт: термін постачання 21-31 дні (днів) |
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ZXTP718MATA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V Frequency - Transition: 180MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 3.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 3 W |
на замовлення 105359 шт: термін постачання 21-31 дні (днів) |
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ZXTP722MATA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V Frequency - Transition: 180MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 70 V Power - Max: 3 W |
на замовлення 890022 шт: термін постачання 21-31 дні (днів) |
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ZXTP720MATA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V Frequency - Transition: 190MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 3 W |
на замовлення 906676 шт: термін постачання 21-31 дні (днів) |
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ZXTP749FTA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 725 mW |
на замовлення 5744 шт: термін постачання 21-31 дні (днів) |
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DMN4027SSS-13 | Diodes Incorporated |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DMN4034SSD-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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DMN4034SSS-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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DMN6066SSD-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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DMN6066SSS-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMP4050SSD-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 247500 шт: термін постачання 21-31 дні (днів) |
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DMP4050SSS-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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DXT2010P5-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Frequency - Transition: 130MHz Supplier Device Package: PowerDI™ 5 Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 3.2 W |
на замовлення 210000 шт: термін постачання 21-31 дні (днів) |
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DXT2011P5-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 130MHz Supplier Device Package: PowerDI™ 5 Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 3.2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DMN4027SSS-13 | Diodes Incorporated |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DMN4027SSS-13 | Diodes Incorporated |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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DMN4034SSD-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 20382 шт: термін постачання 21-31 дні (днів) |
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DMN4034SSS-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V |
на замовлення 48823 шт: термін постачання 21-31 дні (днів) |
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DMN6066SSD-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 24979 шт: термін постачання 21-31 дні (днів) |
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DMN6066SSS-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V |
на замовлення 4910 шт: термін постачання 21-31 дні (днів) |
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DMP4050SSD-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 249221 шт: термін постачання 21-31 дні (днів) |
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DMP4050SSS-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V |
на замовлення 47019 шт: термін постачання 21-31 дні (днів) |
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DXT2010P5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Frequency - Transition: 130MHz Supplier Device Package: PowerDI™ 5 Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 3.2 W |
на замовлення 211147 шт: термін постачання 21-31 дні (днів) |
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DXT2011P5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 130MHz Supplier Device Package: PowerDI™ 5 Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 3.2 W |
на замовлення 1219 шт: термін постачання 21-31 дні (днів) |
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PI7C9X130DNDE | Diodes Incorporated |
![]() Packaging: Tray Package / Case: 256-BGA Mounting Type: Surface Mount Interface: SMBus (2-Wire/I2C) Voltage - Supply: 1.8V, 3.3V Applications: PCI-to-PCI Bridge Supplier Device Package: 256-PBGA (17x17) Part Status: Active |
на замовлення 519 шт: термін постачання 21-31 дні (днів) |
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PI7C9X20505GPBNDE | Diodes Incorporated |
![]() Packaging: Tray Package / Case: 256-BGA Mounting Type: Surface Mount Interface: PCI Express Applications: Packet Switch, 5-Port/5-Lane Supplier Device Package: 256-PBGA (17x17) |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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PI7C9X20303SLCFDE | Diodes Incorporated |
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на замовлення 87 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||
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PI7C9X20303ULAZPE | Diodes Incorporated |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PI3PCIE2612-BZFE | Diodes Incorporated |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PI3PCIE2415ZHE | Diodes Incorporated |
![]() Packaging: Tray Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: PCI Express® On-State Resistance (Max): 12Ohm Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 3V ~ 3.6V Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PI2PCIE2422ZHE | Diodes Incorporated |
![]() Packaging: Tray Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: PCI Express® On-State Resistance (Max): 10Ohm -3db Bandwidth: 2.5GHz Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 1.5V ~ 1.8V Switch Circuit: SPST Multiplexer/Demultiplexer Circuit: 8:4 Number of Channels: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PI3PCIE2215ZHE | Diodes Incorporated |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PI2DBS412ZHE | Diodes Incorporated |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PI2DBS212QE | Diodes Incorporated |
![]() Features: SATA Packaging: Tube Package / Case: 20-SSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Telecommunications On-State Resistance (Max): 10Ohm -3db Bandwidth: 2GHz Supplier Device Package: 20-QSOP Voltage - Supply, Single (V+): 1.2V ~ 1.8V Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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PI3V712-AZLE | Diodes Incorporated |
Description: IC MUX/DEMUX 7-CH VGA 32TQFN Features: RGB Packaging: Tube Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Applications: Video On-State Resistance (Max): 3Ohm (Typ) -3db Bandwidth: 1GHz Supplier Device Package: 32-TQFN (3x6) Voltage - Supply, Single (V+): 3.3V Multiplexer/Demultiplexer Circuit: 2:1, 1:2 Number of Channels: 7 |
товару немає в наявності |
В кошику од. на суму грн. |
DXT790AP5-13 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 40V 3A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3.2 W
Description: TRANS PNP 40V 3A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3.2 W
на замовлення 100000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
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5000+ | 14.43 грн |
ZXMP6A17N8TC |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 2.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Description: MOSFET P-CH 60V 2.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
DMN6068SE-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 4.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
Description: MOSFET N-CH 60V 4.1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
на замовлення 16000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4000+ | 12.04 грн |
8000+ | 11.21 грн |
ZXTN617MATA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 15V 4.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 1.5 W
Description: TRANS NPN 15V 4.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 1.5 W
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
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3000+ | 10.46 грн |
DMN6068SE-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 4.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
Description: MOSFET N-CH 60V 4.1A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 68mOhm @ 12A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
на замовлення 18508 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
7+ | 46.58 грн |
10+ | 29.97 грн |
100+ | 20.71 грн |
500+ | 17.02 грн |
1000+ | 13.75 грн |
2000+ | 12.88 грн |
DXT2012P5-13 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 60V 5.5A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 3.2 W
Description: TRANS PNP 60V 5.5A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 5.5 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 3.2 W
на замовлення 5164 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 74.52 грн |
10+ | 44.55 грн |
100+ | 29.08 грн |
500+ | 21.03 грн |
1000+ | 19.01 грн |
2000+ | 17.31 грн |
DXT2013P5-13 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 100V 5A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 125MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
Description: TRANS PNP 100V 5A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 125MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
на замовлення 204295 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 74.52 грн |
10+ | 44.55 грн |
100+ | 29.08 грн |
500+ | 21.03 грн |
1000+ | 19.01 грн |
2000+ | 17.31 грн |
DXT2014P5-13 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 140V 4A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 3.2 W
Description: TRANS PNP 140V 4A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 3.2 W
на замовлення 206689 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 77.62 грн |
10+ | 46.57 грн |
100+ | 30.46 грн |
500+ | 22.07 грн |
1000+ | 19.97 грн |
2000+ | 18.20 грн |
DXT458P5-13 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 400V 0.3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2.8 W
Description: TRANS NPN 400V 0.3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2.8 W
на замовлення 474390 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 40.36 грн |
12+ | 25.79 грн |
100+ | 17.54 грн |
500+ | 12.91 грн |
1000+ | 11.74 грн |
2000+ | 10.74 грн |
DXT5551P5-13 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 160V 0.6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 2.25 W
Description: TRANS NPN 160V 0.6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 2.25 W
на замовлення 293491 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 55.89 грн |
10+ | 33.71 грн |
100+ | 21.75 грн |
500+ | 15.56 грн |
1000+ | 14.00 грн |
2000+ | 12.68 грн |
DXT690BP5-13 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 45V 3A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 740 mW
Description: TRANS NPN 45V 3A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 740 mW
на замовлення 621 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 68.31 грн |
10+ | 40.96 грн |
100+ | 26.70 грн |
500+ | 19.31 грн |
DXT790AP5-13 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 40V 3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3.2 W
Description: TRANS PNP 40V 3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3.2 W
на замовлення 107449 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 55.89 грн |
10+ | 35.88 грн |
100+ | 24.59 грн |
500+ | 18.26 грн |
1000+ | 16.68 грн |
2000+ | 15.33 грн |
ZXMP6A17N8TC |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 2.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Description: MOSFET P-CH 60V 2.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
ZXTN617MATA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 15V 4.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 1.5 W
Description: TRANS NPN 15V 4.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 1.5 W
на замовлення 10221 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 37.26 грн |
10+ | 30.42 грн |
100+ | 21.15 грн |
500+ | 15.50 грн |
1000+ | 12.60 грн |
ZXTN618MATA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 20V 4.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
Description: TRANS NPN 20V 4.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
на замовлення 267000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 12.81 грн |
6000+ | 11.71 грн |
9000+ | 10.88 грн |
30000+ | 9.97 грн |
ZXTN619MATA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 50V 4A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 165MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
Description: TRANS NPN 50V 4A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 165MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
на замовлення 3855000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 10.62 грн |
6000+ | 9.79 грн |
ZXTN620MATA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 80V 3.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 3 W
Description: TRANS NPN 80V 3.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 3 W
на замовлення 417000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 12.81 грн |
6000+ | 11.71 грн |
9000+ | 10.88 грн |
30000+ | 9.97 грн |
ZXTP718MATA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 20V 3.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Description: TRANS PNP 20V 3.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
на замовлення 102000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 12.81 грн |
6000+ | 11.71 грн |
9000+ | 10.88 грн |
30000+ | 9.97 грн |
ZXTP720MATA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 40V 3A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3 W
Description: TRANS PNP 40V 3A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3 W
на замовлення 897000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 12.81 грн |
6000+ | 11.71 грн |
9000+ | 10.88 грн |
30000+ | 9.97 грн |
ZXTP722MATA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 70V 2.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 3 W
Description: TRANS PNP 70V 2.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 3 W
на замовлення 888000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 12.81 грн |
6000+ | 11.71 грн |
9000+ | 10.88 грн |
30000+ | 9.97 грн |
ZXTP749FTA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 25V 3A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 725 mW
Description: TRANS PNP 25V 3A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 725 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.14 грн |
DXTP19020DP5-13 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 20V 8A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 176MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Description: TRANS PNP 20V 8A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 176MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
на замовлення 55000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 13.20 грн |
10000+ | 11.75 грн |
15000+ | 11.25 грн |
25000+ | 10.04 грн |
35000+ | 10.02 грн |
DXTP19020DP5-13 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 20V 8A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 176MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Description: TRANS PNP 20V 8A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 176MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
на замовлення 58833 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 59.00 грн |
10+ | 35.13 грн |
100+ | 22.78 грн |
500+ | 16.37 грн |
1000+ | 14.76 грн |
2000+ | 13.40 грн |
ZXTN618MATA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 20V 4.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
Description: TRANS NPN 20V 4.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
на замовлення 269984 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.04 грн |
10+ | 31.25 грн |
100+ | 21.75 грн |
500+ | 15.94 грн |
1000+ | 12.95 грн |
ZXTN619MATA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 50V 4A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 165MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
Description: TRANS NPN 50V 4A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 165MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
на замовлення 3870959 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 59.77 грн |
10+ | 35.88 грн |
100+ | 23.21 грн |
500+ | 16.65 грн |
1000+ | 14.99 грн |
ZXTN620MATA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 80V 3.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 3 W
Description: TRANS NPN 80V 3.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 3 W
на замовлення 419965 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.04 грн |
10+ | 31.25 грн |
100+ | 21.75 грн |
500+ | 15.94 грн |
1000+ | 12.95 грн |
ZXTP718MATA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 20V 3.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Description: TRANS PNP 20V 3.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
на замовлення 105359 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.04 грн |
10+ | 31.25 грн |
100+ | 21.75 грн |
500+ | 15.94 грн |
1000+ | 12.95 грн |
ZXTP722MATA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 70V 2.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 3 W
Description: TRANS PNP 70V 2.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 3 W
на замовлення 890022 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.04 грн |
10+ | 31.25 грн |
100+ | 21.75 грн |
500+ | 15.94 грн |
1000+ | 12.95 грн |
ZXTP720MATA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 40V 3A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3 W
Description: TRANS PNP 40V 3A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3 W
на замовлення 906676 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.04 грн |
10+ | 31.25 грн |
100+ | 21.75 грн |
500+ | 15.94 грн |
1000+ | 12.95 грн |
ZXTP749FTA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 25V 3A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 725 mW
Description: TRANS PNP 25V 3A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 725 mW
на замовлення 5744 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 29.50 грн |
17+ | 17.64 грн |
100+ | 11.10 грн |
500+ | 7.76 грн |
1000+ | 6.90 грн |
DMN4027SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 6A 8SO
Description: MOSFET N-CH 40V 6A 8SO
товару немає в наявності
В кошику
од. на суму грн.
DMN4034SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 4.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 40V 4.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 25.50 грн |
5000+ | 23.58 грн |
7500+ | 22.67 грн |
12500+ | 21.25 грн |
DMN4034SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 5.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
Description: MOSFET N-CH 40V 5.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 17.24 грн |
5000+ | 16.29 грн |
DMN6066SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 60V 3.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 27.39 грн |
5000+ | 25.05 грн |
12500+ | 24.11 грн |
DMN6066SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 3.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
Description: MOSFET N-CH 60V 3.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 21.83 грн |
DMP4050SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 40V 4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 40V 4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 247500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 23.87 грн |
DMP4050SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 4.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
Description: MOSFET P-CH 40V 4.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 17.52 грн |
5000+ | 16.29 грн |
DXT2010P5-13 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 60V 6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 3.2 W
Description: TRANS NPN 60V 6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 3.2 W
на замовлення 210000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 17.12 грн |
10000+ | 15.28 грн |
15000+ | 14.66 грн |
25000+ | 13.43 грн |
DXT2011P5-13 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 100V 6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
Description: TRANS NPN 100V 6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
товару немає в наявності
В кошику
од. на суму грн.
DMN4027SSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 6A 8SO
Description: MOSFET N-CH 40V 6A 8SO
товару немає в наявності
В кошику
од. на суму грн.
DMN4027SSS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 6A 8SO
Description: MOSFET N-CH 40V 6A 8SO
товару немає в наявності
В кошику
од. на суму грн.
DMN4034SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 4.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 40V 4.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 20382 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 100.14 грн |
10+ | 59.28 грн |
100+ | 38.44 грн |
500+ | 28.39 грн |
1000+ | 25.75 грн |
DMN4034SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 5.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
Description: MOSFET N-CH 40V 5.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
на замовлення 48823 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 75.30 грн |
10+ | 46.94 грн |
100+ | 30.89 грн |
500+ | 22.45 грн |
1000+ | 20.35 грн |
DMN6066SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 60V 3.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 24979 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 64.43 грн |
10+ | 55.54 грн |
100+ | 43.33 грн |
500+ | 33.59 грн |
1000+ | 26.52 грн |
DMN6066SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 3.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
Description: MOSFET N-CH 60V 3.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
на замовлення 4910 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 81.51 грн |
10+ | 50.90 грн |
100+ | 33.47 грн |
500+ | 24.44 грн |
1000+ | 22.18 грн |
DMP4050SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 40V 4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 40V 4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 249221 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 101.69 грн |
10+ | 61.30 грн |
100+ | 40.57 грн |
500+ | 30.28 грн |
1000+ | 26.40 грн |
DMP4050SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 4.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
Description: MOSFET P-CH 40V 4.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
на замовлення 47019 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 43.47 грн |
10+ | 30.57 грн |
100+ | 23.96 грн |
500+ | 19.70 грн |
1000+ | 18.68 грн |
DXT2010P5-13 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS NPN 60V 6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 3.2 W
Description: TRANS NPN 60V 6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 3.2 W
на замовлення 211147 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 74.52 грн |
10+ | 44.55 грн |
100+ | 29.08 грн |
500+ | 21.03 грн |
1000+ | 19.01 грн |
2000+ | 17.31 грн |
DXT2011P5-13 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 100V 6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
Description: TRANS NPN 100V 6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
на замовлення 1219 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 74.52 грн |
10+ | 44.55 грн |
100+ | 29.08 грн |
500+ | 21.03 грн |
1000+ | 19.01 грн |
PI7C9X130DNDE |
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Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 256BGA
Packaging: Tray
Package / Case: 256-BGA
Mounting Type: Surface Mount
Interface: SMBus (2-Wire/I2C)
Voltage - Supply: 1.8V, 3.3V
Applications: PCI-to-PCI Bridge
Supplier Device Package: 256-PBGA (17x17)
Part Status: Active
Description: IC INTERFACE SPECIALIZED 256BGA
Packaging: Tray
Package / Case: 256-BGA
Mounting Type: Surface Mount
Interface: SMBus (2-Wire/I2C)
Voltage - Supply: 1.8V, 3.3V
Applications: PCI-to-PCI Bridge
Supplier Device Package: 256-PBGA (17x17)
Part Status: Active
на замовлення 519 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2782.86 грн |
10+ | 2034.62 грн |
25+ | 1869.50 грн |
90+ | 1592.69 грн |
270+ | 1564.91 грн |
PI7C9X20505GPBNDE |
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Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 256BGA
Packaging: Tray
Package / Case: 256-BGA
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 5-Port/5-Lane
Supplier Device Package: 256-PBGA (17x17)
Description: IC INTERFACE SPECIALIZED 256BGA
Packaging: Tray
Package / Case: 256-BGA
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 5-Port/5-Lane
Supplier Device Package: 256-PBGA (17x17)
на замовлення 40 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1298.67 грн |
10+ | 1149.13 грн |
25+ | 1101.52 грн |
PI7C9X20303SLCFDE |
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Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 128LQFP
Description: IC INTERFACE SPECIALIZED 128LQFP
на замовлення 87 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
PI7C9X20303ULAZPE |
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Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 132TQFN
Description: IC INTERFACE SPECIALIZED 132TQFN
товару немає в наявності
В кошику
од. на суму грн.
PI3PCIE2612-BZFE |
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Виробник: Diodes Incorporated
Description: IC MUX DISPLAYPORT/PCIE 56TQFN
Description: IC MUX DISPLAYPORT/PCIE 56TQFN
товару немає в наявності
В кошику
од. на суму грн.
PI3PCIE2415ZHE |
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Виробник: Diodes Incorporated
Description: IC MUX/DEMUX 2X1 42TQFN
Packaging: Tray
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: PCI Express®
On-State Resistance (Max): 12Ohm
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
Description: IC MUX/DEMUX 2X1 42TQFN
Packaging: Tray
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: PCI Express®
On-State Resistance (Max): 12Ohm
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
товару немає в наявності
В кошику
од. на суму грн.
PI2PCIE2422ZHE |
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Виробник: Diodes Incorporated
Description: IC MUX/DEMUX 2X1 42TQFN
Packaging: Tray
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: PCI Express®
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 2.5GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 1.5V ~ 1.8V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 8:4
Number of Channels: 8
Description: IC MUX/DEMUX 2X1 42TQFN
Packaging: Tray
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: PCI Express®
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 2.5GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 1.5V ~ 1.8V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 8:4
Number of Channels: 8
товару немає в наявності
В кошику
од. на суму грн.
PI3PCIE2215ZHE |
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Виробник: Diodes Incorporated
Description: IC MUX/DEMUX 2X1 28TQFN
Description: IC MUX/DEMUX 2X1 28TQFN
товару немає в наявності
В кошику
од. на суму грн.
PI2DBS412ZHE |
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Виробник: Diodes Incorporated
Description: IC MUX/DEMUX 2X1 42TQFN
Description: IC MUX/DEMUX 2X1 42TQFN
товару немає в наявності
В кошику
од. на суму грн.
PI2DBS212QE |
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Виробник: Diodes Incorporated
Description: IC MUX/DEMUX 2X2 20QSOP
Features: SATA
Packaging: Tube
Package / Case: 20-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 2GHz
Supplier Device Package: 20-QSOP
Voltage - Supply, Single (V+): 1.2V ~ 1.8V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Description: IC MUX/DEMUX 2X2 20QSOP
Features: SATA
Packaging: Tube
Package / Case: 20-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 2GHz
Supplier Device Package: 20-QSOP
Voltage - Supply, Single (V+): 1.2V ~ 1.8V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
товару немає в наявності
В кошику
од. на суму грн.
PI3V712-AZLE |
Виробник: Diodes Incorporated
Description: IC MUX/DEMUX 7-CH VGA 32TQFN
Features: RGB
Packaging: Tube
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: Video
On-State Resistance (Max): 3Ohm (Typ)
-3db Bandwidth: 1GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1, 1:2
Number of Channels: 7
Description: IC MUX/DEMUX 7-CH VGA 32TQFN
Features: RGB
Packaging: Tube
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: Video
On-State Resistance (Max): 3Ohm (Typ)
-3db Bandwidth: 1GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1, 1:2
Number of Channels: 7
товару немає в наявності
В кошику
од. на суму грн.