Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (78835) > Сторінка 210 з 1314
Фото | Назва | Виробник | Інформація |
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DXT2013P5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V Frequency - Transition: 125MHz Supplier Device Package: PowerDI™ 5 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 3.2 W |
на замовлення 204295 шт: термін постачання 21-31 дні (днів) |
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DXT2014P5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V Frequency - Transition: 120MHz Supplier Device Package: PowerDI™ 5 Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 3.2 W |
на замовлення 206689 шт: термін постачання 21-31 дні (днів) |
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DXT458P5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V Frequency - Transition: 50MHz Supplier Device Package: PowerDI™ 5 Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 2.8 W |
на замовлення 439046 шт: термін постачання 21-31 дні (днів) |
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DXT5551P5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Frequency - Transition: 130MHz Supplier Device Package: PowerDI™ 5 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 160 V Power - Max: 2.25 W |
на замовлення 293491 шт: термін постачання 21-31 дні (днів) |
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DXT690BP5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V Frequency - Transition: 150MHz Supplier Device Package: PowerDI™ 5 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 740 mW |
на замовлення 621 шт: термін постачання 21-31 дні (днів) |
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DXT790AP5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A Current - Collector Cutoff (Max): 20nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V Frequency - Transition: 100MHz Supplier Device Package: PowerDI™ 5 Part Status: Active Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 3.2 W |
на замовлення 107449 шт: термін постачання 21-31 дні (днів) |
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ZXMP6A17N8TC | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXTN617MATA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V Frequency - Transition: 120MHz Supplier Device Package: DFN2020B-3 Part Status: Active Current - Collector (Ic) (Max): 4.5 A Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 1.5 W |
на замовлення 10221 шт: термін постачання 21-31 дні (днів) |
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ZXTN618MATA | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V Frequency - Transition: 140MHz Supplier Device Package: DFN2020B-3 Part Status: Active Current - Collector (Ic) (Max): 4.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.5 W |
на замовлення 267000 шт: термін постачання 21-31 дні (днів) |
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ZXTN619MATA | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 165MHz Supplier Device Package: DFN2020B-3 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 3 W |
на замовлення 3855000 шт: термін постачання 21-31 дні (днів) |
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ZXTN620MATA | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V Frequency - Transition: 160MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 3.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 3 W |
на замовлення 417000 шт: термін постачання 21-31 дні (днів) |
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ZXTP718MATA | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V Frequency - Transition: 180MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 3.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 3 W |
на замовлення 102000 шт: термін постачання 21-31 дні (днів) |
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ZXTP720MATA | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V Frequency - Transition: 190MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 3 W |
на замовлення 897000 шт: термін постачання 21-31 дні (днів) |
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ZXTP722MATA | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V Frequency - Transition: 180MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 70 V Power - Max: 3 W |
на замовлення 888000 шт: термін постачання 21-31 дні (днів) |
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ZXTP749FTA | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 725 mW |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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DXTP19020DP5-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 176MHz Supplier Device Package: PowerDI™ 5 Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 3 W |
на замовлення 55000 шт: термін постачання 21-31 дні (днів) |
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DXTP19020DP5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V Frequency - Transition: 176MHz Supplier Device Package: PowerDI™ 5 Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 3 W |
на замовлення 58833 шт: термін постачання 21-31 дні (днів) |
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ZXTN618MATA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V Frequency - Transition: 140MHz Supplier Device Package: DFN2020B-3 Part Status: Active Current - Collector (Ic) (Max): 4.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.5 W |
на замовлення 269984 шт: термін постачання 21-31 дні (днів) |
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ZXTN619MATA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 165MHz Supplier Device Package: DFN2020B-3 Part Status: Active Current - Collector (Ic) (Max): 4 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 3 W |
на замовлення 3870959 шт: термін постачання 21-31 дні (днів) |
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ZXTN620MATA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V Frequency - Transition: 160MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 3.5 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 3 W |
на замовлення 419965 шт: термін постачання 21-31 дні (днів) |
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ZXTP718MATA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V Frequency - Transition: 180MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 3.5 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 3 W |
на замовлення 105359 шт: термін постачання 21-31 дні (днів) |
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ZXTP722MATA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V Frequency - Transition: 180MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 2.5 A Voltage - Collector Emitter Breakdown (Max): 70 V Power - Max: 3 W |
на замовлення 890022 шт: термін постачання 21-31 дні (днів) |
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ZXTP720MATA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A Current - Collector Cutoff (Max): 25nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V Frequency - Transition: 190MHz Supplier Device Package: DFN2020B-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 3 W |
на замовлення 906676 шт: термін постачання 21-31 дні (днів) |
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ZXTP749FTA | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A Current - Collector Cutoff (Max): 50nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 25 V Power - Max: 725 mW |
на замовлення 5744 шт: термін постачання 21-31 дні (днів) |
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DMN4027SSS-13 | Diodes Incorporated |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN4034SSD-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 20000 шт: термін постачання 21-31 дні (днів) |
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DMN4034SSS-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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DMN6066SSD-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 22500 шт: термін постачання 21-31 дні (днів) |
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DMN6066SSS-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
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DMP4050SSD-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 247500 шт: термін постачання 21-31 дні (днів) |
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DMP4050SSS-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V |
на замовлення 45000 шт: термін постачання 21-31 дні (днів) |
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DXT2010P5-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Frequency - Transition: 130MHz Supplier Device Package: PowerDI™ 5 Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 3.2 W |
на замовлення 210000 шт: термін постачання 21-31 дні (днів) |
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DXT2011P5-13 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 130MHz Supplier Device Package: PowerDI™ 5 Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 3.2 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN4027SSS-13 | Diodes Incorporated |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN4027SSS-13 | Diodes Incorporated |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMN4034SSD-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 20382 шт: термін постачання 21-31 дні (днів) |
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DMN4034SSS-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta) Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V |
на замовлення 48823 шт: термін постачання 21-31 дні (днів) |
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DMN6066SSD-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 3.3A Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 24979 шт: термін постачання 21-31 дні (днів) |
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DMN6066SSS-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V |
на замовлення 4910 шт: термін постачання 21-31 дні (днів) |
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DMP4050SSD-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.8W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 4A Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active |
на замовлення 249221 шт: термін постачання 21-31 дні (днів) |
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DMP4050SSS-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V Power Dissipation (Max): 1.56W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V |
на замовлення 47019 шт: термін постачання 21-31 дні (днів) |
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DXT2010P5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V Frequency - Transition: 130MHz Supplier Device Package: PowerDI™ 5 Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 3.2 W |
на замовлення 211147 шт: термін постачання 21-31 дні (днів) |
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DXT2011P5-13 | Diodes Incorporated |
![]() Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V Frequency - Transition: 130MHz Supplier Device Package: PowerDI™ 5 Part Status: Active Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 3.2 W |
на замовлення 1219 шт: термін постачання 21-31 дні (днів) |
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PI7C9X130DNDE | Diodes Incorporated |
![]() Packaging: Tray Package / Case: 256-BGA Mounting Type: Surface Mount Interface: SMBus (2-Wire/I2C) Voltage - Supply: 1.8V, 3.3V Applications: PCI-to-PCI Bridge Supplier Device Package: 256-PBGA (17x17) Part Status: Active |
на замовлення 519 шт: термін постачання 21-31 дні (днів) |
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PI7C9X20505GPBNDE | Diodes Incorporated |
![]() Packaging: Tray Package / Case: 256-BGA Mounting Type: Surface Mount Interface: PCI Express Applications: Packet Switch, 5-Port/5-Lane Supplier Device Package: 256-PBGA (17x17) |
на замовлення 40 шт: термін постачання 21-31 дні (днів) |
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PI7C9X20303SLCFDE | Diodes Incorporated |
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на замовлення 87 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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PI7C9X20303ULAZPE | Diodes Incorporated |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI3PCIE2612-BZFE | Diodes Incorporated |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI3PCIE2415ZHE | Diodes Incorporated |
![]() Packaging: Tray Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: PCI Express® On-State Resistance (Max): 12Ohm Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 3V ~ 3.6V Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI2PCIE2422ZHE | Diodes Incorporated |
![]() Packaging: Tray Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: PCI Express® On-State Resistance (Max): 10Ohm -3db Bandwidth: 2.5GHz Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 1.5V ~ 1.8V Switch Circuit: SPST Multiplexer/Demultiplexer Circuit: 8:4 Number of Channels: 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI3PCIE2215ZHE | Diodes Incorporated |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI2DBS412ZHE | Diodes Incorporated |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI2DBS212QE | Diodes Incorporated |
![]() Features: SATA Packaging: Tube Package / Case: 20-SSOP (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Telecommunications On-State Resistance (Max): 10Ohm -3db Bandwidth: 2GHz Supplier Device Package: 20-QSOP Voltage - Supply, Single (V+): 1.2V ~ 1.8V Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 2 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI3V712-AZLE | Diodes Incorporated |
Description: IC MUX/DEMUX 7-CH VGA 32TQFN Features: RGB Packaging: Tube Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Applications: Video On-State Resistance (Max): 3Ohm (Typ) -3db Bandwidth: 1GHz Supplier Device Package: 32-TQFN (3x6) Voltage - Supply, Single (V+): 3.3V Multiplexer/Demultiplexer Circuit: 2:1, 1:2 Number of Channels: 7 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI2USB3212ZHE | Diodes Incorporated |
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на замовлення 126 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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AH3761-PG-A | Diodes Incorporated |
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товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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74LVC1G00W5-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-25 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 200 µA |
на замовлення 30000 шт: термін постачання 21-31 дні (днів) |
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74LVC1G00SE-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NAND Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-353 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 1.8ns @ 5V, 50pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 200 µA |
на замовлення 117000 шт: термін постачання 21-31 дні (днів) |
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74LVC1G02W5-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-25 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF Part Status: Active Number of Circuits: 1 Current - Quiescent (Max): 200 µA |
на замовлення 12000 шт: термін постачання 21-31 дні (днів) |
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74LVC1G02SE-7 | Diodes Incorporated |
![]() Packaging: Tape & Reel (TR) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: SOT-353 Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 1.7ns @ 5V, 50pF Number of Circuits: 1 Current - Quiescent (Max): 200 µA |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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DXT2013P5-13 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 100V 5A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 125MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
Description: TRANS PNP 100V 5A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 340mV @ 400mA, 4A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 1V
Frequency - Transition: 125MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
на замовлення 204295 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 76.21 грн |
10+ | 45.56 грн |
100+ | 29.74 грн |
500+ | 21.50 грн |
1000+ | 19.44 грн |
2000+ | 17.71 грн |
DXT2014P5-13 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 140V 4A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 3.2 W
Description: TRANS PNP 140V 4A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 360mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 5V
Frequency - Transition: 120MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 3.2 W
на замовлення 206689 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 79.39 грн |
10+ | 47.63 грн |
100+ | 31.15 грн |
500+ | 22.57 грн |
1000+ | 20.42 грн |
2000+ | 18.62 грн |
DXT458P5-13 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 400V 0.3A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2.8 W
Description: TRANS NPN 400V 0.3A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 6mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2.8 W
на замовлення 439046 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 53.19 грн |
10+ | 31.80 грн |
100+ | 20.51 грн |
500+ | 14.68 грн |
1000+ | 13.20 грн |
2000+ | 11.96 грн |
DXT5551P5-13 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 160V 0.6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 2.25 W
Description: TRANS NPN 160V 0.6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 2.25 W
на замовлення 293491 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 57.16 грн |
10+ | 34.48 грн |
100+ | 22.25 грн |
500+ | 15.92 грн |
1000+ | 14.32 грн |
2000+ | 12.97 грн |
DXT690BP5-13 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 45V 3A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 740 mW
Description: TRANS NPN 45V 3A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 150mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 740 mW
на замовлення 621 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 69.86 грн |
10+ | 41.89 грн |
100+ | 27.31 грн |
500+ | 19.75 грн |
DXT790AP5-13 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 40V 3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3.2 W
Description: TRANS PNP 40V 3A POWERDI5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 300mA, 3A
Current - Collector Cutoff (Max): 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 10mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3.2 W
на замовлення 107449 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 57.16 грн |
10+ | 36.70 грн |
100+ | 25.14 грн |
500+ | 18.68 грн |
1000+ | 17.06 грн |
2000+ | 15.68 грн |
ZXMP6A17N8TC |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 2.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
Description: MOSFET P-CH 60V 2.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.3A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 637 pF @ 30 V
товару немає в наявності
В кошику
од. на суму грн.
ZXTN617MATA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 15V 4.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 1.5 W
Description: TRANS NPN 15V 4.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 280mV @ 50mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 3A, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 1.5 W
на замовлення 10221 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.11 грн |
10+ | 31.11 грн |
100+ | 21.64 грн |
500+ | 15.86 грн |
1000+ | 12.89 грн |
ZXTN618MATA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 20V 4.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
Description: TRANS NPN 20V 4.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
на замовлення 267000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 13.11 грн |
6000+ | 11.98 грн |
9000+ | 11.12 грн |
30000+ | 10.20 грн |
ZXTN619MATA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 50V 4A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 165MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
Description: TRANS NPN 50V 4A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 165MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
на замовлення 3855000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 10.86 грн |
6000+ | 10.01 грн |
ZXTN620MATA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 80V 3.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 3 W
Description: TRANS NPN 80V 3.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 3 W
на замовлення 417000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 13.11 грн |
6000+ | 11.98 грн |
9000+ | 11.12 грн |
30000+ | 10.20 грн |
ZXTP718MATA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 20V 3.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Description: TRANS PNP 20V 3.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
на замовлення 102000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 13.11 грн |
6000+ | 11.98 грн |
9000+ | 11.12 грн |
30000+ | 10.20 грн |
ZXTP720MATA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 40V 3A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3 W
Description: TRANS PNP 40V 3A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3 W
на замовлення 897000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 13.11 грн |
6000+ | 11.98 грн |
9000+ | 11.12 грн |
30000+ | 10.20 грн |
ZXTP722MATA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 70V 2.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 3 W
Description: TRANS PNP 70V 2.5A DFN2020B-3
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 3 W
на замовлення 888000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 13.11 грн |
6000+ | 11.98 грн |
9000+ | 11.12 грн |
30000+ | 10.20 грн |
ZXTP749FTA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 25V 3A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 725 mW
Description: TRANS PNP 25V 3A SOT-23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 725 mW
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.26 грн |
DXTP19020DP5-13 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 20V 8A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 176MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Description: TRANS PNP 20V 8A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 176MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
на замовлення 55000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 13.50 грн |
10000+ | 12.01 грн |
15000+ | 11.51 грн |
25000+ | 10.27 грн |
35000+ | 10.25 грн |
DXTP19020DP5-13 |
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Виробник: Diodes Incorporated
Description: TRANS PNP 20V 8A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 176MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Description: TRANS PNP 20V 8A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 275mV @ 800mA, 8A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 2V
Frequency - Transition: 176MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
на замовлення 58833 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 60.34 грн |
10+ | 35.93 грн |
100+ | 23.29 грн |
500+ | 16.75 грн |
1000+ | 15.10 грн |
2000+ | 13.71 грн |
ZXTN618MATA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 20V 4.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
Description: TRANS NPN 20V 4.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 270mV @ 125mA, 4.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
на замовлення 269984 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.90 грн |
10+ | 31.96 грн |
100+ | 22.25 грн |
500+ | 16.30 грн |
1000+ | 13.25 грн |
ZXTN619MATA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 50V 4A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 165MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
Description: TRANS NPN 50V 4A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 320mV @ 200mA, 4A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 165MHz
Supplier Device Package: DFN2020B-3
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 3 W
на замовлення 3870959 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
6+ | 61.13 грн |
10+ | 36.70 грн |
100+ | 23.74 грн |
500+ | 17.02 грн |
1000+ | 15.33 грн |
ZXTN620MATA |
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Виробник: Diodes Incorporated
Description: TRANS NPN 80V 3.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 3 W
Description: TRANS NPN 80V 3.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 325mV @ 300mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 200mA, 2V
Frequency - Transition: 160MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 3 W
на замовлення 419965 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.90 грн |
10+ | 31.96 грн |
100+ | 22.25 грн |
500+ | 16.30 грн |
1000+ | 13.25 грн |
ZXTP718MATA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 20V 3.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
Description: TRANS PNP 20V 3.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 350mA, 3.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 2A, 2V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 3 W
на замовлення 105359 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.90 грн |
10+ | 31.96 грн |
100+ | 22.25 грн |
500+ | 16.30 грн |
1000+ | 13.25 грн |
ZXTP722MATA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 70V 2.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 3 W
Description: TRANS PNP 70V 2.5A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 200mA, 1.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 5V
Frequency - Transition: 180MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 2.5 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 3 W
на замовлення 890022 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.90 грн |
10+ | 31.96 грн |
100+ | 22.25 грн |
500+ | 16.30 грн |
1000+ | 13.25 грн |
ZXTP720MATA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 40V 3A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3 W
Description: TRANS PNP 40V 3A DFN2020B-3
Packaging: Cut Tape (CT)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 370mV @ 250mA, 2.5A
Current - Collector Cutoff (Max): 25nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1.5A, 2V
Frequency - Transition: 190MHz
Supplier Device Package: DFN2020B-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 3 W
на замовлення 906676 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
9+ | 38.90 грн |
10+ | 31.96 грн |
100+ | 22.25 грн |
500+ | 16.30 грн |
1000+ | 13.25 грн |
ZXTP749FTA |
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Виробник: Diodes Incorporated
Description: TRANS PNP 25V 3A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 725 mW
Description: TRANS PNP 25V 3A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 300mA, 3A
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 725 mW
на замовлення 5744 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
11+ | 30.17 грн |
17+ | 18.04 грн |
100+ | 11.35 грн |
500+ | 7.94 грн |
1000+ | 7.06 грн |
DMN4027SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 6A 8SO
Description: MOSFET N-CH 40V 6A 8SO
товару немає в наявності
В кошику
од. на суму грн.
DMN4034SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 4.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 40V 4.8A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 20000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 26.08 грн |
5000+ | 24.12 грн |
7500+ | 23.19 грн |
12500+ | 21.73 грн |
DMN4034SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 5.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
Description: MOSFET N-CH 40V 5.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 17.63 грн |
5000+ | 16.66 грн |
DMN6066SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 60V 3.3A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 22500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 28.01 грн |
5000+ | 25.62 грн |
12500+ | 24.66 грн |
DMN6066SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 3.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
Description: MOSFET N-CH 60V 3.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 22.33 грн |
DMP4050SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 40V 4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 40V 4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 247500 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 24.41 грн |
DMP4050SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 4.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
Description: MOSFET P-CH 40V 4.4A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
на замовлення 45000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
2500+ | 17.92 грн |
5000+ | 16.66 грн |
DXT2010P5-13 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 60V 6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 3.2 W
Description: TRANS NPN 60V 6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 3.2 W
на замовлення 210000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5000+ | 17.51 грн |
10000+ | 15.63 грн |
15000+ | 15.00 грн |
25000+ | 13.74 грн |
DXT2011P5-13 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 100V 6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
Description: TRANS NPN 100V 6A POWERDI 5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
товару немає в наявності
В кошику
од. на суму грн.
DMN4027SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 6A 8SO
Description: MOSFET N-CH 40V 6A 8SO
товару немає в наявності
В кошику
од. на суму грн.
DMN4027SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 6A 8SO
Description: MOSFET N-CH 40V 6A 8SO
товару немає в наявності
В кошику
од. на суму грн.
DMN4034SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 4.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 40V 4.8A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 453pF @ 20V
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 20382 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 102.41 грн |
10+ | 60.62 грн |
100+ | 39.31 грн |
500+ | 29.04 грн |
1000+ | 26.34 грн |
DMN4034SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 5.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
Description: MOSFET N-CH 40V 5.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 453 pF @ 20 V
на замовлення 48823 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 77.01 грн |
10+ | 48.01 грн |
100+ | 31.59 грн |
500+ | 22.96 грн |
1000+ | 20.81 грн |
DMN6066SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 60V 3.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2N-CH 60V 3.3A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3.3A
Input Capacitance (Ciss) (Max) @ Vds: 502pF @ 30V
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.3nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 24979 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 65.89 грн |
10+ | 56.80 грн |
100+ | 44.31 грн |
500+ | 34.35 грн |
1000+ | 27.12 грн |
DMN6066SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 3.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
Description: MOSFET N-CH 60V 3.7A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 502 pF @ 30 V
на замовлення 4910 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 83.36 грн |
10+ | 52.06 грн |
100+ | 34.23 грн |
500+ | 24.99 грн |
1000+ | 22.68 грн |
DMP4050SSD-13 |
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Виробник: Diodes Incorporated
Description: MOSFET 2P-CH 40V 4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Description: MOSFET 2P-CH 40V 4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.8W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4A
Input Capacitance (Ciss) (Max) @ Vds: 674pF @ 20V
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.9nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
на замовлення 249221 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
4+ | 104.00 грн |
10+ | 62.69 грн |
100+ | 41.50 грн |
500+ | 30.97 грн |
1000+ | 27.00 грн |
DMP4050SSS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 4.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
Description: MOSFET P-CH 40V 4.4A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 10V
Power Dissipation (Max): 1.56W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 674 pF @ 20 V
на замовлення 47019 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
8+ | 44.46 грн |
10+ | 31.27 грн |
100+ | 24.51 грн |
500+ | 20.15 грн |
1000+ | 19.11 грн |
DXT2010P5-13 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 60V 6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 3.2 W
Description: TRANS NPN 60V 6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 300mA, 6A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 1V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 3.2 W
на замовлення 211147 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 76.21 грн |
10+ | 45.56 грн |
100+ | 29.74 грн |
500+ | 21.50 грн |
1000+ | 19.44 грн |
2000+ | 17.71 грн |
DXT2011P5-13 |
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Виробник: Diodes Incorporated
Description: TRANS NPN 100V 6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
Description: TRANS NPN 100V 6A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 500mA, 5A
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
Frequency - Transition: 130MHz
Supplier Device Package: PowerDI™ 5
Part Status: Active
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 3.2 W
на замовлення 1219 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
5+ | 76.21 грн |
10+ | 45.56 грн |
100+ | 29.74 грн |
500+ | 21.50 грн |
1000+ | 19.44 грн |
PI7C9X130DNDE |
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Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 256BGA
Packaging: Tray
Package / Case: 256-BGA
Mounting Type: Surface Mount
Interface: SMBus (2-Wire/I2C)
Voltage - Supply: 1.8V, 3.3V
Applications: PCI-to-PCI Bridge
Supplier Device Package: 256-PBGA (17x17)
Part Status: Active
Description: IC INTERFACE SPECIALIZED 256BGA
Packaging: Tray
Package / Case: 256-BGA
Mounting Type: Surface Mount
Interface: SMBus (2-Wire/I2C)
Voltage - Supply: 1.8V, 3.3V
Applications: PCI-to-PCI Bridge
Supplier Device Package: 256-PBGA (17x17)
Part Status: Active
на замовлення 519 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 2846.10 грн |
10+ | 2080.86 грн |
25+ | 1911.99 грн |
90+ | 1628.88 грн |
270+ | 1600.47 грн |
PI7C9X20505GPBNDE |
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Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 256BGA
Packaging: Tray
Package / Case: 256-BGA
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 5-Port/5-Lane
Supplier Device Package: 256-PBGA (17x17)
Description: IC INTERFACE SPECIALIZED 256BGA
Packaging: Tray
Package / Case: 256-BGA
Mounting Type: Surface Mount
Interface: PCI Express
Applications: Packet Switch, 5-Port/5-Lane
Supplier Device Package: 256-PBGA (17x17)
на замовлення 40 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
1+ | 1328.18 грн |
10+ | 1175.25 грн |
25+ | 1126.55 грн |
PI7C9X20303SLCFDE |
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Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 128LQFP
Description: IC INTERFACE SPECIALIZED 128LQFP
на замовлення 87 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
PI7C9X20303ULAZPE |
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Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 132TQFN
Description: IC INTERFACE SPECIALIZED 132TQFN
товару немає в наявності
В кошику
од. на суму грн.
PI3PCIE2612-BZFE |
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Виробник: Diodes Incorporated
Description: IC MUX DISPLAYPORT/PCIE 56TQFN
Description: IC MUX DISPLAYPORT/PCIE 56TQFN
товару немає в наявності
В кошику
од. на суму грн.
PI3PCIE2415ZHE |
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Виробник: Diodes Incorporated
Description: IC MUX/DEMUX 2X1 42TQFN
Packaging: Tray
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: PCI Express®
On-State Resistance (Max): 12Ohm
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
Description: IC MUX/DEMUX 2X1 42TQFN
Packaging: Tray
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: PCI Express®
On-State Resistance (Max): 12Ohm
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
товару немає в наявності
В кошику
од. на суму грн.
PI2PCIE2422ZHE |
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Виробник: Diodes Incorporated
Description: IC MUX/DEMUX 2X1 42TQFN
Packaging: Tray
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: PCI Express®
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 2.5GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 1.5V ~ 1.8V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 8:4
Number of Channels: 8
Description: IC MUX/DEMUX 2X1 42TQFN
Packaging: Tray
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: PCI Express®
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 2.5GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 1.5V ~ 1.8V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 8:4
Number of Channels: 8
товару немає в наявності
В кошику
од. на суму грн.
PI3PCIE2215ZHE |
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Виробник: Diodes Incorporated
Description: IC MUX/DEMUX 2X1 28TQFN
Description: IC MUX/DEMUX 2X1 28TQFN
товару немає в наявності
В кошику
од. на суму грн.
PI2DBS412ZHE |
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Виробник: Diodes Incorporated
Description: IC MUX/DEMUX 2X1 42TQFN
Description: IC MUX/DEMUX 2X1 42TQFN
товару немає в наявності
В кошику
од. на суму грн.
PI2DBS212QE |
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Виробник: Diodes Incorporated
Description: IC MUX/DEMUX 2X2 20QSOP
Features: SATA
Packaging: Tube
Package / Case: 20-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 2GHz
Supplier Device Package: 20-QSOP
Voltage - Supply, Single (V+): 1.2V ~ 1.8V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Description: IC MUX/DEMUX 2X2 20QSOP
Features: SATA
Packaging: Tube
Package / Case: 20-SSOP (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 2GHz
Supplier Device Package: 20-QSOP
Voltage - Supply, Single (V+): 1.2V ~ 1.8V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
товару немає в наявності
В кошику
од. на суму грн.
PI3V712-AZLE |
Виробник: Diodes Incorporated
Description: IC MUX/DEMUX 7-CH VGA 32TQFN
Features: RGB
Packaging: Tube
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: Video
On-State Resistance (Max): 3Ohm (Typ)
-3db Bandwidth: 1GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1, 1:2
Number of Channels: 7
Description: IC MUX/DEMUX 7-CH VGA 32TQFN
Features: RGB
Packaging: Tube
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: Video
On-State Resistance (Max): 3Ohm (Typ)
-3db Bandwidth: 1GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 3.3V
Multiplexer/Demultiplexer Circuit: 2:1, 1:2
Number of Channels: 7
товару немає в наявності
В кошику
од. на суму грн.
PI2USB3212ZHE |
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Виробник: Diodes Incorporated
Description: IC MUX/DEMUX 1X2 28TQFN
Description: IC MUX/DEMUX 1X2 28TQFN
на замовлення 126 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
AH3761-PG-A |
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Виробник: Diodes Incorporated
Description: MAGNETIC SWITCH LATCH 3SIP
Description: MAGNETIC SWITCH LATCH 3SIP
товару немає в наявності
В кошику
од. на суму грн.
74LVC1G00W5-7 |
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Виробник: Diodes Incorporated
Description: IC GATE NAND 1CH 2-INP SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Description: IC GATE NAND 1CH 2-INP SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.34 грн |
6000+ | 3.74 грн |
9000+ | 3.51 грн |
15000+ | 3.05 грн |
21000+ | 2.91 грн |
30000+ | 2.78 грн |
74LVC1G00SE-7 |
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Виробник: Diodes Incorporated
Description: IC GATE NAND 1CH 2-INP SOT353
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-353
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 1.8ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Description: IC GATE NAND 1CH 2-INP SOT353
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-353
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 1.8ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
на замовлення 117000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.30 грн |
6000+ | 4.57 грн |
9000+ | 4.30 грн |
15000+ | 3.75 грн |
21000+ | 3.58 грн |
30000+ | 3.42 грн |
75000+ | 3.02 грн |
74LVC1G02W5-7 |
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Виробник: Diodes Incorporated
Description: IC GATE NOR 1CH 2-INP SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Description: IC GATE NOR 1CH 2-INP SOT25
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-25
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 4ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 4.34 грн |
6000+ | 3.74 грн |
9000+ | 3.51 грн |
74LVC1G02SE-7 |
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Виробник: Diodes Incorporated
Description: IC GATE NOR 1CH 2-INP SOT353
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-353
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 1.7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
Description: IC GATE NOR 1CH 2-INP SOT353
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: SOT-353
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 1.7ns @ 5V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 200 µA
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)Кількість | Ціна |
---|---|
3000+ | 5.10 грн |
6000+ | 4.40 грн |