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FZT589TA DIODES INCORPORATED FZT589.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
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FZT789AQTA DIODES INCORPORATED FZT789A.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector current: 3A
Pulsed collector current: 6A
Collector-emitter voltage: 25V
Current gain: 100...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
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FCX589TA DIODES INCORPORATED FCX589.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 2.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 2.3W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
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FMMT589TA FMMT589TA DIODES INCORPORATED FMMT589.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Collector-emitter voltage: 30V
Quantity in set/package: 3000pcs.
Frequency: 100MHz
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FMMT489TA DIODES INCORPORATED FMMT489.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 3000pcs.
Frequency: 150MHz
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DMN4031SSD-13 DMN4031SSD-13 DIODES INCORPORATED DMN4031SSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMN4031SSDQ-13 DMN4031SSDQ-13 DIODES INCORPORATED DMN4031SSDQ.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
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AP66300FVBW-13 DIODES INCORPORATED AP66300.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...60V DC
Output voltage: 0.8...50V DC
Output current: 3A
Case: U-QDFN4040-16SWP Type UXB
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
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AP66300QFVBW-13 DIODES INCORPORATED AP66300Q.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...60V DC
Output voltage: 0.8...50V DC
Output current: 3A
Case: U-QDFN4040-16SWP Type UXB
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive industry
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SMAJ48CAQ-13-F DIODES INCORPORATED SMAJ5.0CAQ-SMAJ200CAQ.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ64A-13-F SMCJ64A-13-F DIODES INCORPORATED SMCJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ64AQ-13-F DIODES INCORPORATED SMCJ5.0CAQ_SMCJ110CAQ.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1V; unidirectional; DO214AB,SMC; Ch: 1; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Number of channels: 1
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
3000+21.18 грн
Мінімальне замовлення: 3000
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PDS1045-13 DIODES INCORPORATED ds30539.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Case: PowerDI®5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Leakage current: 150mA
Max. forward voltage: 0.51V
Load current: 10A
Max. off-state voltage: 45V
Max. forward impulse current: 275A
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DMN30H4D0L-7 DMN30H4D0L-7 DIODES INCORPORATED DMN30H4D0L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
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DMN30H4D0LFDE-7 DIODES INCORPORATED DMN30H4D0LFDE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.44A; 0.63W; U-DFN2020-6
Gate-source voltage: ±20V
Drain-source voltage: 300V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 0.44A
On-state resistance: 6Ω
Power dissipation: 0.63W
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DMN30H14DLY-13 DIODES INCORPORATED DMN30H14DLY.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 4nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.16A
On-state resistance: 20Ω
Power dissipation: 2.2W
Pulsed drain current: 1A
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DMN30H4D0L-13 DMN30H4D0L-13 DIODES INCORPORATED DMN30H4D0L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
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DMN30H4D0LFDE-13 DIODES INCORPORATED DMN30H4D0LFDE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 430mA; Idm: 2A; 1.98W
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.43A
On-state resistance: 6Ω
Power dissipation: 1.98W
Pulsed drain current: 2A
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DMN30H4D1S-13 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
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DMN30H4D1S-7 DIODES INCORPORATED Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
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B350B-13-F DIODES INCORPORATED B320B-B360B_Rev10-2.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 3A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.7V
Load current: 3A
Max. off-state voltage: 50V
Max. forward impulse current: 100A
Kind of package: reel; tape
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74LVC573AQ20-13 DIODES INCORPORATED 74LVC573A.pdf Category: Latches
Description: IC: digital; 8bit,buffer; AND; Ch: 10; IN: 8; CMOS; 1.65÷3.6VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; buffer
Number of channels: 10
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Case: V-QFN4525-20
Operating temperature: -40...150°C
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Number of inputs: 8
Kind of gate: AND
Technology: CMOS
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74LVC573AT20-13 DIODES INCORPORATED 74LVC573A.pdf Category: Latches
Description: IC: digital; D latch; Ch: 8; IN: 1; CMOS; 1.65÷3.6VDC; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...150°C
Family: LVC
Kind of output: 3-state
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of inputs: 1
Technology: CMOS
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SMBJ40CA-13-F SMBJ40CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 638 шт:
термін постачання 14-30 дні (днів)
42+10.77 грн
53+8.00 грн
58+7.25 грн
63+6.67 грн
Мінімальне замовлення: 42
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SMBJ45CA-13-F SMBJ45CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷57.5V; 8.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1794 шт:
термін постачання 14-30 дні (днів)
28+16.15 грн
38+11.17 грн
43+9.92 грн
100+7.08 грн
500+5.92 грн
1000+5.50 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
SMBJ43CA-13-F SMBJ43CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 955 шт:
термін постачання 14-30 дні (днів)
23+19.74 грн
29+14.67 грн
33+12.83 грн
100+8.25 грн
500+6.33 грн
Мінімальне замовлення: 23
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SMBJ48CA-13-F SMBJ48CA-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷61.3V; 7.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ43A-13-F SMBJ43A-13-F DIODES INCORPORATED SMBJ_ser.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMN10H220LVT-7 DMN10H220LVT-7 DIODES INCORPORATED DMN10H220LVT.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.79A
Pulsed drain current: 6.6A
Power dissipation: 1.07W
Case: TSOT26
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220LQ-7 DMN10H220LQ-7 DIODES INCORPORATED DMN10H220LQ-7.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN10H220L-13 DMN10H220L-13 DIODES INCORPORATED DMN10H220L.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN10H220LE-13 DIODES INCORPORATED DMN10H220LE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN10H220LQ-13 DIODES INCORPORATED DMN10H220LQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 4.1nC
Application: automotive industry
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DMN10H220LFDF-7 DIODES INCORPORATED DMN10H220LFDF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220LFVW-7 DIODES INCORPORATED DMN10H220LFVW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 44A
Power dissipation: 2.4W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220LPDW-13 DIODES INCORPORATED DMN10H220LPDW.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.4A; Idm: 32A; 2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.4A
Pulsed drain current: 32A
Power dissipation: 2.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP4015SK3Q-13-01 DIODES INCORPORATED Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -14A
Case: DPAK; TO252
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
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MMSZ5226BS-7-F MMSZ5226BS-7-F DIODES INCORPORATED mmsz52xxbs_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 4665 шт:
термін постачання 14-30 дні (днів)
50+8.97 грн
71+5.92 грн
87+4.79 грн
142+2.94 грн
3000+1.73 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
B130-13-F B130-13-F DIODES INCORPORATED b120-160b.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 0.11nF
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 3506 шт:
термін постачання 14-30 дні (днів)
42+10.77 грн
54+7.75 грн
100+5.62 грн
500+4.32 грн
1000+3.85 грн
2000+3.41 грн
2500+3.27 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
DMN6068SEQ-13 DIODES INCORPORATED ds32033.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 20.8A; 3.7W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 20.8A
Power dissipation: 3.7W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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AP8801SG-13 AP8801SG-13 DIODES INCORPORATED AP8801.pdf Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 0.8÷48VDC; 0.5A; SO8; SMD; 700kHz; 92%
Topology: buck
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Output current: 0.5A
Input voltage: 0.8...48V DC
Efficiency: 92%
Frequency: 700kHz
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DMP10H400SEQ-13 DMP10H400SEQ-13 DIODES INCORPORATED DMP10H400SEQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2.1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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MMSZ5221BQ-7-F MMSZ5221BQ-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 2.4V; SMD; reel,tape; SOD123; single diode
Application: automotive industry
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 2.4V
на замовлення 5410 шт:
термін постачання 14-30 дні (днів)
3000+1.71 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MMSZ5221B-7-F MMSZ5221B-7-F DIODES INCORPORATED mmsz52xxb_Ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 2.4V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 2.4V
на замовлення 1845 шт:
термін постачання 14-30 дні (днів)
84+5.38 грн
109+3.83 грн
130+3.21 грн
212+1.97 грн
Мінімальне замовлення: 84
В кошику  од. на суму  грн.
DMG2302UK-7
+1
 		DMG2302UK-7 DIODES INCORPORATED DMG2302UK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.66W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 4919 шт:
термін постачання 14-30 дні (днів)
27+17.05 грн
35+12.17 грн
100+7.44 грн
500+5.40 грн
1000+4.68 грн
1500+4.33 грн
3000+3.82 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
DMG2302UKQ-7 DMG2302UKQ-7 DIODES INCORPORATED DMG2302UKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMG2302UK-13 DMG2302UK-13 DIODES INCORPORATED DMG2302UK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMG2302UKQ-13 DMG2302UKQ-13 DIODES INCORPORATED DMG2302UKQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMG2302UQ-7 DMG2302UQ-7 DIODES INCORPORATED DMG2302UQ.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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MMSZ5230BS-7-F MMSZ5230BS-7-F DIODES INCORPORATED mmsz52xxbs_ser.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 6425 шт:
термін постачання 14-30 дні (днів)
50+8.97 грн
65+6.50 грн
74+5.67 грн
120+3.50 грн
500+2.50 грн
1000+2.34 грн
3000+2.10 грн
6000+1.99 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BSP75GTA BSP75GTA DIODES INCORPORATED BSP75G.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.6A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.55Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
на замовлення 1359 шт:
термін постачання 14-30 дні (днів)
5+109.48 грн
10+65.00 грн
50+51.66 грн
100+45.83 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ZXMS6004DGTA ZXMS6004DGTA DIODES INCORPORATED ZXMS6004DG.pdf Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
на замовлення 678 шт:
термін постачання 14-30 дні (днів)
5+96.92 грн
10+57.66 грн
50+43.08 грн
100+39.08 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AP2138N-2.2TRG1 DIODES INCORPORATED AP2138-9.pdf Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 2.2V; 250mA; SOT23-3; SMD; -40÷85°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Output voltage: 2.2V
Output current: 0.25A
Case: SOT23-3
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
3000+7.45 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ZTX958 DIODES INCORPORATED ZTX958.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.2W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 85MHz
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ZTX958STZ DIODES INCORPORATED ZTX958.pdf Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.2W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 85MHz
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PAM8006ATR DIODES INCORPORATED PAM8006A.pdf Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 300kHz; Pout: 15W; Ch: 2; Amp.class: D; QFN32
Operating temperature: -40...125°C
Mounting: SMD
Output power: 15W
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Frequency: 300kHz
Type of integrated circuit: audio amplifier
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Case: QFN32
Amplifier class: D
Kind of package: reel; tape
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B350A-13-F B350A-13-F DIODES INCORPORATED B320A-13-F.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 3A; reel,tape; 850mW
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Power dissipation: 0.85W
Max. forward impulse current: 80A
Load current: 3A
Max. off-state voltage: 50V
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 5933 шт:
термін постачання 14-30 дні (днів)
18+25.13 грн
21+20.67 грн
22+19.00 грн
100+13.83 грн
500+11.17 грн
1000+9.67 грн
2000+8.50 грн
2500+8.25 грн
5000+7.33 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
B360-13-F B360-13-F DIODES INCORPORATED b320-360.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 4003 шт:
термін постачання 14-30 дні (днів)
12+37.69 грн
15+28.50 грн
17+24.83 грн
100+14.25 грн
500+10.08 грн
1000+8.83 грн
3000+7.58 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
B360BQ-13-F DIODES INCORPORATED B340BQ-B360BQ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.7V
Load current: 3A
Max. forward impulse current: 100A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
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B360Q-13-F DIODES INCORPORATED B320Q-B360Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.7V
Load current: 3A
Max. forward impulse current: 100A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMC
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FZT589TA FZT589.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 3W; SOT223
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
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FZT789AQTA FZT789A.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 25V; 3A; 3W; SOT223; automotive industry
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 3W
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Collector current: 3A
Pulsed collector current: 6A
Collector-emitter voltage: 25V
Current gain: 100...800
Quantity in set/package: 1000pcs.
Frequency: 100MHz
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FCX589TA FCX589.pdf
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 2.3W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 2.3W
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 2A
Collector-emitter voltage: 30V
Current gain: 40...300
Quantity in set/package: 1000pcs.
Frequency: 100MHz
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FMMT589TA FMMT589.pdf
FMMT589TA
Виробник: DIODES INCORPORATED
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: PNP
Polarisation: bipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Collector-emitter voltage: 30V
Quantity in set/package: 3000pcs.
Frequency: 100MHz
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FMMT489TA FMMT489.pdf
Виробник: DIODES INCORPORATED
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 1A; 500mW; SOT23
Type of transistor: NPN
Polarisation: bipolar
Power dissipation: 0.5W
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Collector current: 1A
Pulsed collector current: 4A
Collector-emitter voltage: 30V
Current gain: 20...300
Quantity in set/package: 3000pcs.
Frequency: 150MHz
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DMN4031SSD-13 DMN4031SSD.pdf
DMN4031SSD-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Kind of channel: enhancement
Type of transistor: N-MOSFET
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DMN4031SSDQ-13 DMN4031SSDQ.pdf
DMN4031SSDQ-13
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 5.6A; Idm: 40A; 2.6W; SO8
Kind of package: 13 inch reel; tape
Mounting: SMD
Case: SO8
Polarisation: unipolar
Gate charge: 18.6nC
On-state resistance: 50mΩ
Power dissipation: 2.6W
Drain current: 5.6A
Gate-source voltage: ±20V
Pulsed drain current: 40A
Drain-source voltage: 40V
Application: automotive industry
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
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AP66300FVBW-13 AP66300.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...60V DC
Output voltage: 0.8...50V DC
Output current: 3A
Case: U-QDFN4040-16SWP Type UXB
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
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AP66300QFVBW-13 AP66300Q.pdf
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 3.8÷60VDC; Uout: 0.8÷50VDC; 3A; SMD
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter
Input voltage: 3.8...60V DC
Output voltage: 0.8...50V DC
Output current: 3A
Case: U-QDFN4040-16SWP Type UXB
Mounting: SMD
Frequency: 0.5MHz
Topology: buck
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: automotive industry
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SMAJ48CAQ-13-F SMAJ5.0CAQ-SMAJ200CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.4kW; 53.3÷58.9V; 5.2A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 5.2A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 5µA
Application: automotive industry
Features of semiconductor devices: glass passivated
Kind of package: reel; tape
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SMCJ64A-13-F SMCJ_ser.pdf
SMCJ64A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1÷78.6V; 14.6A; unidirectional; SMC
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1...78.6V
Max. forward impulse current: 14.6A
Semiconductor structure: unidirectional
Case: SMC
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMCJ64AQ-13-F SMCJ5.0CAQ_SMCJ110CAQ.pdf
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 71.1V; unidirectional; DO214AB,SMC; Ch: 1; SMCJ
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 64V
Breakdown voltage: 71.1V
Semiconductor structure: unidirectional
Case: DO214AB; SMC
Mounting: SMD
Leakage current: 5µA
Manufacturer series: SMCJ
Number of channels: 1
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3000+21.18 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
PDS1045-13 ds30539.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; PowerDI®5; SMD; 45V; 10A; reel,tape
Case: PowerDI®5
Kind of package: reel; tape
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Leakage current: 150mA
Max. forward voltage: 0.51V
Load current: 10A
Max. off-state voltage: 45V
Max. forward impulse current: 275A
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DMN30H4D0L-7 DMN30H4D0L.pdf
DMN30H4D0L-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
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DMN30H4D0LFDE-7 DMN30H4D0LFDE.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 0.44A; 0.63W; U-DFN2020-6
Gate-source voltage: ±20V
Drain-source voltage: 300V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 0.44A
On-state resistance: 6Ω
Power dissipation: 0.63W
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DMN30H14DLY-13 DMN30H14DLY.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 160mA; Idm: 1A; 2.2W; SOT89
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 4nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT89
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.16A
On-state resistance: 20Ω
Power dissipation: 2.2W
Pulsed drain current: 1A
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DMN30H4D0L-13 DMN30H4D0L.pdf
DMN30H4D0L-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 200mA; Idm: 2A; 470mW; SOT23
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT23
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.2A
On-state resistance: 6Ω
Power dissipation: 0.47W
Pulsed drain current: 2A
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DMN30H4D0LFDE-13 DMN30H4D0LFDE.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 430mA; Idm: 2A; 1.98W
Gate-source voltage: ±20V
Drain-source voltage: 300V
Gate charge: 7.6nC
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: U-DFN2020-6
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 0.43A
On-state resistance: 6Ω
Power dissipation: 1.98W
Pulsed drain current: 2A
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DMN30H4D1S-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
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DMN30H4D1S-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 6A; 1.69W; SOT223
Drain-source voltage: 60V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Case: SOT223
Polarisation: unipolar
Kind of package: 7 inch reel; tape
Drain current: 2A
On-state resistance: 0.25Ω
Power dissipation: 1.69W
Pulsed drain current: 6A
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B350B-13-F B320B-B360B_Rev10-2.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 50V; 3A; reel,tape
Case: SMB
Mounting: SMD
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.7V
Load current: 3A
Max. off-state voltage: 50V
Max. forward impulse current: 100A
Kind of package: reel; tape
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74LVC573AQ20-13 74LVC573A.pdf
Виробник: DIODES INCORPORATED
Category: Latches
Description: IC: digital; 8bit,buffer; AND; Ch: 10; IN: 8; CMOS; 1.65÷3.6VDC; SMD
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; buffer
Number of channels: 10
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Case: V-QFN4525-20
Operating temperature: -40...150°C
Family: LVC
Kind of output: push-pull
Kind of package: reel; tape
Number of inputs: 8
Kind of gate: AND
Technology: CMOS
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74LVC573AT20-13 74LVC573A.pdf
Виробник: DIODES INCORPORATED
Category: Latches
Description: IC: digital; D latch; Ch: 8; IN: 1; CMOS; 1.65÷3.6VDC; SMD; TSSOP20
Type of integrated circuit: digital
Kind of integrated circuit: D latch
Number of channels: 8
Supply voltage: 1.65...3.6V DC
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...150°C
Family: LVC
Kind of output: 3-state
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Number of inputs: 1
Technology: CMOS
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SMBJ40CA-13-F SMBJ_ser.pdf
SMBJ40CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 44.4÷51.1V; 9.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 40V
Breakdown voltage: 44.4...51.1V
Max. forward impulse current: 9.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 638 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
42+10.77 грн
53+8.00 грн
58+7.25 грн
63+6.67 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
SMBJ45CA-13-F SMBJ_ser.pdf
SMBJ45CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 50÷57.5V; 8.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 45V
Breakdown voltage: 50...57.5V
Max. forward impulse current: 8.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 1794 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
28+16.15 грн
38+11.17 грн
43+9.92 грн
100+7.08 грн
500+5.92 грн
1000+5.50 грн
Мінімальне замовлення: 28
В кошику  од. на суму  грн.
SMBJ43CA-13-F SMBJ_ser.pdf
SMBJ43CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
на замовлення 955 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
23+19.74 грн
29+14.67 грн
33+12.83 грн
100+8.25 грн
500+6.33 грн
Мінімальне замовлення: 23
В кошику  од. на суму  грн.
SMBJ48CA-13-F SMBJ_ser.pdf
SMBJ48CA-13-F
Виробник: DIODES INCORPORATED
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 53.3÷61.3V; 7.7A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...61.3V
Max. forward impulse current: 7.7A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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SMBJ43A-13-F SMBJ_ser.pdf
SMBJ43A-13-F
Виробник: DIODES INCORPORATED
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.6kW; 47.8÷54.9V; 8.6A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 43V
Breakdown voltage: 47.8...54.9V
Max. forward impulse current: 8.6A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
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DMN10H220LVT-7 DMN10H220LVT.pdf
DMN10H220LVT-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.79A; Idm: 6.6A; 1.07W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.79A
Pulsed drain current: 6.6A
Power dissipation: 1.07W
Case: TSOT26
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220LQ-7 DMN10H220LQ-7.pdf
DMN10H220LQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMN10H220L-13 DMN10H220L.pdf
DMN10H220L-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.3A; Idm: 8A; 800mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.3A
Pulsed drain current: 8A
Power dissipation: 0.8W
Case: SOT23
Gate-source voltage: ±16V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN10H220LE-13 DMN10H220LE.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.8A; Idm: 8A; 1.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.8A
Pulsed drain current: 8A
Power dissipation: 1.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMN10H220LQ-13 DMN10H220LQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.6A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.6A
Power dissipation: 1.3W
Case: SOT23
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 4.1nC
Application: automotive industry
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DMN10H220LFDF-7 DMN10H220LFDF.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1.7A; Idm: 8.8A; 1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1.7A
Pulsed drain current: 8.8A
Power dissipation: 1W
Case: U-DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220LFVW-7 DMN10H220LFVW.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 44A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 44A
Power dissipation: 2.4W
Case: PowerDI®3333-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
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DMN10H220LPDW-13 DMN10H220LPDW.pdf
Виробник: DIODES INCORPORATED
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 6.4A; Idm: 32A; 2.2W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.4A
Pulsed drain current: 32A
Power dissipation: 2.2W
Case: PowerDI5060-8
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 6.7nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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DMP4015SK3Q-13-01
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -14A; DPAK,TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -14A
Case: DPAK; TO252
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
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MMSZ5226BS-7-F mmsz52xxbs_ser.pdf
MMSZ5226BS-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 3.3V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 4665 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+8.97 грн
71+5.92 грн
87+4.79 грн
142+2.94 грн
3000+1.73 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
B130-13-F b120-160b.pdf
B130-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SMA
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 0.11nF
Max. forward voltage: 0.5V
Max. forward impulse current: 30A
Kind of package: reel; tape
на замовлення 3506 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
42+10.77 грн
54+7.75 грн
100+5.62 грн
500+4.32 грн
1000+3.85 грн
2000+3.41 грн
2500+3.27 грн
Мінімальне замовлення: 42
В кошику  од. на суму  грн.
DMN6068SEQ-13 ds32033.pdf
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.5A; Idm: 20.8A; 3.7W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.5A
Pulsed drain current: 20.8A
Power dissipation: 3.7W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 10.3nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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AP8801SG-13 AP8801.pdf
AP8801SG-13
Виробник: DIODES INCORPORATED
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 0.8÷48VDC; 0.5A; SO8; SMD; 700kHz; 92%
Topology: buck
Kind of package: reel; tape
Kind of integrated circuit: DC/DC converter
Type of integrated circuit: PMIC
Case: SO8
Mounting: SMD
Operating temperature: -40...105°C
Output current: 0.5A
Input voltage: 0.8...48V DC
Efficiency: 92%
Frequency: 700kHz
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DMP10H400SEQ-13 DMP10H400SEQ.pdf
DMP10H400SEQ-13
Виробник: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -2.1A
Power dissipation: 2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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MMSZ5221BQ-7-F mmsz52xxb_Ser.pdf
MMSZ5221BQ-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 2.4V; SMD; reel,tape; SOD123; single diode
Application: automotive industry
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 2.4V
на замовлення 5410 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3000+1.71 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
MMSZ5221B-7-F mmsz52xxb_Ser.pdf
MMSZ5221B-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.37/0.5W; 2.4V; SMD; reel,tape; SOD123; single diode
Kind of package: reel; tape
Case: SOD123
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Power dissipation: 0.37/0.5W
Tolerance: ±5%
Zener voltage: 2.4V
на замовлення 1845 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
84+5.38 грн
109+3.83 грн
130+3.21 грн
212+1.97 грн
Мінімальне замовлення: 84
В кошику  од. на суму  грн.
DMG2302UK-7 DMG2302UK.pdf
DMG2302UK-7
+1
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 0.66W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 0.66W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 90mΩ
Mounting: SMD
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Version: ESD
на замовлення 4919 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
27+17.05 грн
35+12.17 грн
100+7.44 грн
500+5.40 грн
1000+4.68 грн
1500+4.33 грн
3000+3.82 грн
Мінімальне замовлення: 27
В кошику  од. на суму  грн.
DMG2302UKQ-7 DMG2302UKQ.pdf
DMG2302UKQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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DMG2302UK-13 DMG2302UK.pdf
DMG2302UK-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
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В кошику  од. на суму  грн.
DMG2302UKQ-13 DMG2302UKQ.pdf
DMG2302UKQ-13
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.2A; Idm: 12A; 1.1W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 1.1W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.12Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: 13 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
В кошику  од. на суму  грн.
DMG2302UQ-7 DMG2302UQ.pdf
DMG2302UQ-7
Виробник: DIODES INCORPORATED
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.8A; Idm: 25A; 1.2W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.8A
Pulsed drain current: 25A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 4.3nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Application: automotive industry
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MMSZ5230BS-7-F mmsz52xxbs_ser.pdf
MMSZ5230BS-7-F
Виробник: DIODES INCORPORATED
Category: SMD Zener diodes
Description: Diode: Zener; 0.2W; 4.7V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.2W
Zener voltage: 4.7V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD323
Semiconductor structure: single diode
на замовлення 6425 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
50+8.97 грн
65+6.50 грн
74+5.67 грн
120+3.50 грн
500+2.50 грн
1000+2.34 грн
3000+2.10 грн
6000+1.99 грн
Мінімальне замовлення: 50
В кошику  од. на суму  грн.
BSP75GTA BSP75G.pdf
BSP75GTA
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.6A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.6A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.55Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Control voltage: 60V DC
на замовлення 1359 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+109.48 грн
10+65.00 грн
50+51.66 грн
100+45.83 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
ZXMS6004DGTA ZXMS6004DG.pdf
ZXMS6004DGTA
Виробник: DIODES INCORPORATED
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 1.3A; Ch: 1; N-Channel; SMD; SOT223
Type of integrated circuit: power switch
Kind of integrated circuit: low-side
Output current: 1.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: SOT223
On-state resistance: 0.6Ω
Kind of package: reel; tape
Supply voltage: 0...5.5V DC
Operating temperature: -40...125°C
на замовлення 678 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
5+96.92 грн
10+57.66 грн
50+43.08 грн
100+39.08 грн
Мінімальне замовлення: 5
В кошику  од. на суму  грн.
AP2138N-2.2TRG1 AP2138-9.pdf
Виробник: DIODES INCORPORATED
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; fixed; 2.2V; 250mA; SOT23-3; SMD; -40÷85°C
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed
Output voltage: 2.2V
Output current: 0.25A
Case: SOT23-3
Mounting: SMD
Operating temperature: -40...85°C
Tolerance: ±2%
Number of channels: 1
на замовлення 3000 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3000+7.45 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ZTX958 ZTX958.pdf
Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.2W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Quantity in set/package: 4000pcs.
Kind of package: bulk
Frequency: 85MHz
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ZTX958STZ ZTX958.pdf
Виробник: DIODES INCORPORATED
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 400V; 0.5A; 1.2W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 400V
Collector current: 0.5A
Power dissipation: 1.2W
Case: TO92
Mounting: THT
Quantity in set/package: 2000pcs.
Kind of package: Ammo Pack
Frequency: 85MHz
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PAM8006ATR PAM8006A.pdf
Виробник: DIODES INCORPORATED
Category: RTV - audio integrated circuits
Description: IC: audio amplifier; 300kHz; Pout: 15W; Ch: 2; Amp.class: D; QFN32
Operating temperature: -40...125°C
Mounting: SMD
Output power: 15W
Number of channels: 2
Voltage supply range: 2.5...5.5V DC
Frequency: 300kHz
Type of integrated circuit: audio amplifier
Integrated circuit features: low distortion THD; low noise; stereo; thermal protection
Case: QFN32
Amplifier class: D
Kind of package: reel; tape
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B350A-13-F B320A-13-F.pdf
B350A-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMA; SMD; 50V; 3A; reel,tape; 850mW
Case: SMA
Type of diode: Schottky rectifying
Mounting: SMD
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Power dissipation: 0.85W
Max. forward impulse current: 80A
Load current: 3A
Max. off-state voltage: 50V
Kind of package: reel; tape
Semiconductor structure: single diode
на замовлення 5933 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
18+25.13 грн
21+20.67 грн
22+19.00 грн
100+13.83 грн
500+11.17 грн
1000+9.67 грн
2000+8.50 грн
2500+8.25 грн
5000+7.33 грн
Мінімальне замовлення: 18
В кошику  од. на суму  грн.
B360-13-F b320-360.pdf
B360-13-F
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: SMC
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.7V
Max. forward impulse current: 100A
Kind of package: reel; tape
на замовлення 4003 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
12+37.69 грн
15+28.50 грн
17+24.83 грн
100+14.25 грн
500+10.08 грн
1000+8.83 грн
3000+7.58 грн
Мінімальне замовлення: 12
В кошику  од. на суму  грн.
B360BQ-13-F B340BQ-B360BQ.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMB; SMD; 60V; 3A; reel,tape
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.7V
Load current: 3A
Max. forward impulse current: 100A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMB
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B360Q-13-F B320Q-B360Q.pdf
Виробник: DIODES INCORPORATED
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMC; SMD; 60V; 3A; reel,tape
Application: automotive industry
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Mounting: SMD
Capacitance: 0.2nF
Leakage current: 20mA
Max. forward voltage: 0.7V
Load current: 3A
Max. forward impulse current: 100A
Max. off-state voltage: 60V
Kind of package: reel; tape
Case: SMC
товару немає в наявності
В кошику  од. на суму  грн.
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