Продукція > DIODES INCORPORATED > Всі товари виробника DIODES INCORPORATED (74565) > Сторінка 382 з 1243
| Фото | Назва | Виробник | Інформація |
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D15V0M1U2LP3-7 | Diodes Incorporated |
Description: TVS DIODE 15VWM 24V X3DFN06032Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 19pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: X3-DFN0603-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.5V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 75W Power Line Protection: No Part Status: Active |
на замовлення 260000 шт: термін постачання 21-31 дні (днів) |
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DBF2510-13 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBFPackaging: Tape & Reel (TR) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DBF Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMC3025LSDQ-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 6.5A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
на замовлення 477500 шт: термін постачання 21-31 дні (днів) |
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DMG4822SSDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 10A 8SOPackaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 582500 шт: термін постачання 21-31 дні (днів) |
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DMP6050SPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 1.3W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V |
на замовлення 350000 шт: термін постачання 21-31 дні (днів) |
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DMTH4011SPD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 11.1A PWRDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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DMTH4011SPDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 11.1A PWRDI50Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 50000 шт: термін постачання 21-31 дні (днів) |
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DMTH43M8LPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 22A PWRDI5060Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2560000 шт: термін постачання 21-31 дні (днів) |
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D15V0M1U2LP3-7 | Diodes Incorporated |
Description: TVS DIODE 15VWM 24V X3DFN06032Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 19pF @ 1MHz Current - Peak Pulse (10/1000µs): 3A (8/20µs) Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: X3-DFN0603-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 15.5V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 75W Power Line Protection: No Part Status: Active |
на замовлення 263736 шт: термін постачання 21-31 дні (днів) |
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DBF2510-13 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBFPackaging: Cut Tape (CT) Package / Case: 4-SMD, Flat Leads Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: DBF Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 2.5 A Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 444 шт: термін постачання 21-31 дні (днів) |
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DMC3025LSDQ-13 | Diodes Incorporated |
Description: MOSFET N/P-CH 30V 6.5A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 |
на замовлення 480161 шт: термін постачання 21-31 дні (днів) |
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DMG4822SSDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 30V 10A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.42W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 589853 шт: термін постачання 21-31 дні (днів) |
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DMP6050SPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V Power Dissipation (Max): 1.3W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V |
на замовлення 352480 шт: термін постачання 21-31 дні (днів) |
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DMTH4011SPD-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 11.1A PWRDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1454 шт: термін постачання 21-31 дні (днів) |
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DMTH4011SPDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 40V 11.1A PWRDI50Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 50465 шт: термін постачання 21-31 дні (днів) |
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DMTH43M8LPSQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 40V 22A PWRDI5060Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V Power Dissipation (Max): 2.7W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2562019 шт: термін постачання 21-31 дні (днів) |
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PI4IOE5V96224ZLEX | Diodes Incorporated |
Description: IC XPNDR 1MHZ I2C SMBUS 32TQFNPackaging: Cut Tape (CT) Features: POR Package / Case: 32-WFQFN Exposed Pad Output Type: Push-Pull Mounting Type: Surface Mount Interface: I²C, SMBus Number of I/O: 24 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 5.5V Clock Frequency: 1 MHz Interrupt Output: Yes Supplier Device Package: 32-TQFN (3x6) Current - Output Source/Sink: 25mA Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 10157 шт: термін постачання 21-31 дні (днів) |
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PI3WVR13412ZHEX | Diodes Incorporated |
Description: DISPLAY SWITCH V-QFN3590-42Packaging: Tape & Reel (TR) Features: HDMI Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Applications: DisplayPort -3db Bandwidth: 7GHz Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Active Number of Channels: 4 |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
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PI3WVR13612ZLEX | Diodes Incorporated |
Description: DISPLAY SWITCH W-QFN3590-52Packaging: Tape & Reel (TR) Features: HDMI Package / Case: 52-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Applications: DisplayPort -3db Bandwidth: 7GHz Supplier Device Package: 52-TQFN (3.5x9) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Active Number of Channels: 4 |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
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PI3WVR13412ZHEX | Diodes Incorporated |
Description: DISPLAY SWITCH V-QFN3590-42Packaging: Cut Tape (CT) Features: HDMI Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Applications: DisplayPort -3db Bandwidth: 7GHz Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Active Number of Channels: 4 |
на замовлення 19374 шт: термін постачання 21-31 дні (днів) |
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PI3WVR13612ZLEX | Diodes Incorporated |
Description: DISPLAY SWITCH W-QFN3590-52Packaging: Cut Tape (CT) Features: HDMI Package / Case: 52-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Applications: DisplayPort -3db Bandwidth: 7GHz Supplier Device Package: 52-TQFN (3.5x9) Voltage - Supply, Single (V+): 3V ~ 3.6V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Active Number of Channels: 4 |
на замовлення 15189 шт: термін постачання 21-31 дні (днів) |
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ADTC114YUAQ-7 | Diodes Incorporated |
Description: TRANS PREBIAS NPN 0.1A SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Supplier Device Package: SOT-323 Part Status: Active Current - Collector (Ic) (Max): 100 mA Power - Max: 330 mW Frequency - Transition: 250 MHz Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
на замовлення 94360 шт: термін постачання 21-31 дні (днів) |
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BCR421UFDQ-7 | Diodes Incorporated |
Description: IC LED DRVR LIN PWM 350MA 6DFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Voltage - Output: 40V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -55°C ~ 150°C (TJ) Applications: Lighting, Signage Current - Output / Channel: 350mA Internal Switch(s): No Supplier Device Package: U-DFN2020-6 Dimming: PWM Voltage - Supply (Max): 18V Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 519664 шт: термін постачання 21-31 дні (днів) |
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DMP1009UFDF-7 | Diodes Incorporated |
Description: MOSFET P-CH 12V 15A 6UDFNPackaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta) Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V |
на замовлення 3696 шт: термін постачання 21-31 дні (днів) |
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DMP3013SFV-7 | Diodes Incorporated |
Description: MOSFET P-CH 30V 12A PWRDI3333Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V Power Dissipation (Max): 940mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V |
на замовлення 14435 шт: термін постачання 21-31 дні (днів) |
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DMP34M4SPS-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 135A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 135A (Tc) Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V Power Dissipation (Max): 1.5W Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V |
на замовлення 1480066 шт: термін постачання 21-31 дні (днів) |
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DMP4065SQ-7 | Diodes Incorporated |
Description: MOSFET P-CH 40V 2.4A SOT23 T&RPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V |
на замовлення 5736 шт: термін постачання 21-31 дні (днів) |
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DPD13AWF-7 | Diodes Incorporated | Description: TVS DIODES 13VWM 21.5VC SOD123F |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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HDS10M-13 | Diodes Incorporated |
Description: BRIDGE RECT 1PHASE 1KV 1A HDSPackaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Mounting Type: Surface Mount Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: HDS Part Status: Active Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 1 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
на замовлення 72315 шт: термін постачання 21-31 дні (днів) |
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PI3DPX1202A2ZBEX | Diodes Incorporated |
Description: DISPLAY SWITCH V-QFN7070-48 T&R |
на замовлення 5 шт: термін постачання 21-31 дні (днів) |
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PI3PCIE3412AZHEX | Diodes Incorporated |
Description: PCI SWITCH 2:1 4 CHAN 42TQFNPackaging: Cut Tape (CT) Features: Bi-Directional, SATA, USB 3.0 Package / Case: 42-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Applications: PCI Express® On-State Resistance (Max): 5Ohm (Typ) -3db Bandwidth: 8.2GHz Supplier Device Package: 42-TQFN (9x3.5) Voltage - Supply, Single (V+): 3V ~ 3.6V Multiplexer/Demultiplexer Circuit: 2:1 Part Status: Active Number of Channels: 4 |
на замовлення 18233 шт: термін постачання 21-31 дні (днів) |
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PI3PCIE3412AZLEX | Diodes Incorporated |
Description: PCIE SWITCH W-QFN3060-40 T&R 3.5Packaging: Cut Tape (CT) Features: Bi-Directional, SATA, USB 3.0 Package / Case: 40-WFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C Applications: PCI Express® On-State Resistance (Max): 5Ohm (Typ) -3db Bandwidth: 8.2GHz Supplier Device Package: 40-TQFN (3x6) Voltage - Supply, Single (V+): 3V ~ 3.6V Multiplexer/Demultiplexer Circuit: 2:1 Number of Channels: 4 |
на замовлення 14000 шт: термін постачання 21-31 дні (днів) |
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PI4IOE5V6408ZTAEX | Diodes Incorporated |
Description: IC XPNDR 1MHZ I2C 16UQFNPackaging: Cut Tape (CT) Package / Case: 16-UFQFN Output Type: Push-Pull Mounting Type: Surface Mount Interface: I2C Number of I/O: 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 3.6V Clock Frequency: 1 MHz Interrupt Output: Yes Supplier Device Package: 16-UQFN (1.8x2.6) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 10699 шт: термін постачання 21-31 дні (днів) |
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PI4IOE5V9535ZDEX | Diodes Incorporated |
Description: IC XPNDR 400KHZ I2C 24TQFNPackaging: Cut Tape (CT) Package / Case: 24-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C Number of I/O: 16 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.3V ~ 5.5V Clock Frequency: 400 kHz Interrupt Output: Yes Supplier Device Package: 24-TQFN (4x4) Part Status: Active DigiKey Programmable: Not Verified |
на замовлення 46413 шт: термін постачання 21-31 дні (днів) |
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PI6CG15401ZHIEX | Diodes Incorporated |
Description: IC CLOCK GENERATOR 32TQFN |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI7C9X752FAEX | Diodes Incorporated |
Description: IC BRIDGE DUAL UART 48TQFP |
на замовлення 2000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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PI7C9X794FCEX | Diodes Incorporated |
Description: IC BRIDGE QUAD UART 64LQFP |
на замовлення 1000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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PT7C433833AZEEX | Diodes Incorporated |
Description: IC RTC CLK/CALENDAR I2C 8TDFNPackaging: Cut Tape (CT) Features: Leap Year, NVSRAM, Square Wave Output Package / Case: 8-WFDFN Exposed Pad Mounting Type: Surface Mount Memory Size: 56B Interface: I2C, 2-Wire Serial Type: Clock/Calendar Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 5.5V Time Format: HH:MM:SS (12/24 hr) Date Format: YY-MM-DD-dd Supplier Device Package: 8-TDFN (2x3) Voltage - Supply, Battery: 1.5V ~ 3.7V Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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SDT30B100D1-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 100V 30A TO2523Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 30A Supplier Device Package: TO-252-3 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A Current - Reverse Leakage @ Vr: 120 µA @ 100 V |
на замовлення 5403 шт: термін постачання 21-31 дні (днів) |
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DPD13AWF-7 | Diodes Incorporated | Description: TVS DIODES 13VWM 21.5VC SOD123F |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||||||
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PI6CB18200ZDIEX | Diodes Incorporated |
Description: CLOCK BUFFER,V-QFN4040-24 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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ZXMN6A08GQTC | Diodes Incorporated |
Description: MOSFET N-CH 60V 3.8A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta) Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-223-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 8000 шт: термін постачання 21-31 дні (днів) |
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PI3DPX1205AZLBEX | Diodes Incorporated |
Description: ACTIVE DISPLAY W-QFN3060-40 T&RPackaging: Cut Tape (CT) Package / Case: 40-WFQFN Exposed Pad Number of Channels: 6 Mounting Type: Surface Mount Output: DisplayPort Type: Buffer, ReDriver Input: DisplayPort Voltage - Supply: 3.3V Applications: DisplayPort Data Rate (Max): 10Gbps Supplier Device Package: 40-TQFN (4x6) Signal Conditioning: Input Equalization |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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PI3HDX231ZLEX | Diodes Incorporated |
Description: IC INTERFACE SPECIALIZED 72TQFNPackaging: Cut Tape (CT) Package / Case: 72-WFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C Applications: HDMI Redriver, Level Shifter Supplier Device Package: 72-TQFN (11x5) Part Status: Active |
на замовлення 93980 шт: термін постачання 21-31 дні (днів) |
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ZXTP56020FDBQ-7 | Diodes Incorporated |
Description: TRANS 2PNP 20V 2A U-DFN2020-6Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V Supplier Device Package: U-DFN2020-6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 168000 шт: термін постачання 21-31 дні (днів) |
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ZXTP56020FDBQ-7 | Diodes Incorporated |
Description: TRANS 2PNP 20V 2A U-DFN2020-6Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 405mW Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V Supplier Device Package: U-DFN2020-6 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 170441 шт: термін постачання 21-31 дні (днів) |
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PI3EQX1004B1ZHEX | Diodes Incorporated |
Description: USB3 EQX V-QFN3590-42Packaging: Tape & Reel (TR) Package / Case: 42-VFQFN Exposed Pad Number of Channels: 4 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Operating Temperature: 125°C (TJ) Voltage - Supply: 3V ~ 3.6V Applications: USB 3.0 Data Rate (Max): 10Gbps Supplier Device Package: 42-TQFN (9x3.5) Signal Conditioning: Input Equalization Part Status: Active |
на замовлення 52500 шт: термін постачання 21-31 дні (днів) |
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PI3EQX1004B1ZHEX | Diodes Incorporated |
Description: USB3 EQX V-QFN3590-42Packaging: Cut Tape (CT) Package / Case: 42-VFQFN Exposed Pad Number of Channels: 4 Mounting Type: Surface Mount Output: CML Type: Buffer, ReDriver Input: CML Operating Temperature: 125°C (TJ) Voltage - Supply: 3V ~ 3.6V Applications: USB 3.0 Data Rate (Max): 10Gbps Supplier Device Package: 42-TQFN (9x3.5) Signal Conditioning: Input Equalization Part Status: Active |
на замовлення 55018 шт: термін постачання 21-31 дні (днів) |
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DMN61D9UWQ-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 400MA SOT323Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 400mA (Ta) Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V Power Dissipation (Max): 440mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-323 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 14076478 шт: термін постачання 21-31 дні (днів) |
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DMP3028LPSQ-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 21A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Power Dissipation (Max): 1.28W Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 366422 шт: термін постачання 21-31 дні (днів) |
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DMT36M1LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 30V 65A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 65A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V |
на замовлення 619997 шт: термін постачання 21-31 дні (днів) |
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DMTH6002LPS-13 | Diodes Incorporated |
Description: MOSFET N-CH 60V 100A PWRDI5060-8Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V Power Dissipation (Max): 167W Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V |
на замовлення 8286 шт: термін постачання 21-31 дні (днів) |
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PDS4200HQ-13 | Diodes Incorporated |
Description: DIODE SCHOTTKY 200V 4A POWERDI 5Packaging: Cut Tape (CT) Package / Case: PowerDI™ 5 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Technology: Schottky Current - Average Rectified (Io): 4A Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3166 шт: термін постачання 21-31 дні (днів) |
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PI3DPX1203ZHEX | Diodes Incorporated |
Description: IC REDRIVER 8GBPS 42TQFNPackaging: Cut Tape (CT) Package / Case: 42-VFQFN Exposed Pad Number of Channels: 4 Mounting Type: Surface Mount Output: DisplayPort Type: Buffer, ReDriver Input: DisplayPort Voltage - Supply: 3.3V Applications: DisplayPort Data Rate (Max): 8Gbps Supplier Device Package: 42-TQFN (9x3.5) Signal Conditioning: Input Equalization |
на замовлення 129 шт: термін постачання 21-31 дні (днів) |
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PI3USB32212ZLEX | Diodes Incorporated |
Description: USB3 SWITCH W-QFN3060-32 T&R 3.5Packaging: Cut Tape (CT) Features: USB 2.0, USB 3.0 Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Applications: USB On-State Resistance (Max): 13Ohm -3db Bandwidth: 10.6GHz Supplier Device Package: 32-TQFN (3x6) Voltage - Supply, Single (V+): 2.97V ~ 3.63V Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 1:2 Part Status: Active Number of Channels: 2 |
на замовлення 29651 шт: термін постачання 21-31 дні (днів) |
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ZXTR2105FF-7 | Diodes Incorporated |
Description: IC REG LINEAR 5V 89MA SOT23FPackaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Output Type: Fixed Mounting Type: Surface Mount Current - Output: 89mA Operating Temperature: -65°C ~ 150°C (TJ) Output Configuration: Positive Voltage - Input (Max): 60V Number of Regulators: 1 Supplier Device Package: SOT-23F Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 46dB (100Hz) Current - Supply (Max): 6.7 mA Grade: Automotive Qualification: AEC-Q100 |
на замовлення 739112 шт: термін постачання 21-31 дні (днів) |
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ADC144EUQ-13 | Diodes Incorporated |
Description: IC TRANSISTOR SOT363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 270mW Current - Collector (Ic) (Max): 100mA Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Frequency - Transition: 250MHz Resistor - Base (R1): 47kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 90000 шт: термін постачання 21-31 дні (днів) |
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BSS138K-13 | Diodes Incorporated |
Description: MOSFET N-CH 50V 310MA SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 310mA (Ta) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V Power Dissipation (Max): 380mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V |
на замовлення 5520000 шт: термін постачання 21-31 дні (днів) |
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D15V0H1U2LP-7B | Diodes Incorporated |
Description: TVS DIODE 15VWM 27V X1DFN10062Packaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 70pF @ 1MHz Current - Peak Pulse (10/1000µs): 12A (8/20µs) Voltage - Reverse Standoff (Typ): 15V (Max) Supplier Device Package: X1-DFN1006-2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 16V Voltage - Clamping (Max) @ Ipp: 27V Power - Peak Pulse: 300W Power Line Protection: No |
на замовлення 750000 шт: термін постачання 21-31 дні (днів) |
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D55V0M1B2WSQ-7 | Diodes Incorporated |
Description: TVS DIODE 55VWM 100VC SOD323Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 14pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 55V (Max) Supplier Device Package: SOD-323 Bidirectional Channels: 1 Voltage - Breakdown (Min): 57V Voltage - Clamping (Max) @ Ipp: 100V Power - Peak Pulse: 200W Power Line Protection: No Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
на замовлення 66000 шт: термін постачання 21-31 дні (днів) |
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| D15V0M1U2LP3-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 15VWM 24V X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.5V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 75W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15VWM 24V X3DFN06032
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.5V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 75W
Power Line Protection: No
Part Status: Active
на замовлення 260000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.67 грн |
| 20000+ | 2.26 грн |
| 30000+ | 2.23 грн |
| DBF2510-13 |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
товару немає в наявності
В кошику
од. на суму грн.
| DMC3025LSDQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 6.5A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
на замовлення 477500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 20.07 грн |
| 5000+ | 17.81 грн |
| 7500+ | 17.03 грн |
| 12500+ | 15.91 грн |
| DMG4822SSDQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 582500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 25.64 грн |
| 5000+ | 22.83 грн |
| 7500+ | 21.88 грн |
| 12500+ | 20.19 грн |
| DMP6050SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
на замовлення 350000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 21.51 грн |
| 5000+ | 19.09 грн |
| 7500+ | 18.26 грн |
| 12500+ | 16.37 грн |
| DMTH4011SPD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| DMTH4011SPDQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 50000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 30.60 грн |
| 5000+ | 27.36 грн |
| 7500+ | 26.96 грн |
| DMTH43M8LPSQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 22A PWRDI5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2560000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2500+ | 33.65 грн |
| 5000+ | 31.79 грн |
| 7500+ | 18.72 грн |
| 12500+ | 17.09 грн |
| D15V0M1U2LP3-7 |
![]() |
Виробник: Diodes Incorporated
Description: TVS DIODE 15VWM 24V X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.5V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 75W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 15VWM 24V X3DFN06032
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 19pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: X3-DFN0603-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.5V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 75W
Power Line Protection: No
Part Status: Active
на замовлення 263736 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 25+ | 13.15 грн |
| 37+ | 8.71 грн |
| 103+ | 3.10 грн |
| 500+ | 2.73 грн |
| 1000+ | 2.55 грн |
| 2000+ | 2.52 грн |
| 5000+ | 2.44 грн |
| DBF2510-13 |
![]() |
Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 2.5A DBF
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Flat Leads
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBF
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 2.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 2.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 444 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 39.46 грн |
| 10+ | 32.70 грн |
| 100+ | 22.71 грн |
| DMC3025LSDQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET N/P-CH 30V 6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N/P-CH 30V 6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 4.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 501pF @ 15V, 590pF @ 25V
Rds On (Max) @ Id, Vgs: 20mOhm @ 7.4A, 10V, 45mOhm @ 5.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.6nC @ 4.5V, 5.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
на замовлення 480161 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 78.93 грн |
| 10+ | 47.58 грн |
| 100+ | 31.15 грн |
| 500+ | 22.59 грн |
| 1000+ | 20.46 грн |
| DMG4822SSDQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 30V 10A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.42W (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 478.9pF @ 16V
Rds On (Max) @ Id, Vgs: 21mOhm @ 8.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 589853 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 65.77 грн |
| 10+ | 54.87 грн |
| 100+ | 37.95 грн |
| 500+ | 29.76 грн |
| 1000+ | 25.33 грн |
| DMP6050SPS-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
Description: MOSFET P-CH 60V 5.7A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2163 pF @ 30 V
на замовлення 352480 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 84.68 грн |
| 10+ | 50.83 грн |
| 100+ | 33.29 грн |
| 500+ | 24.18 грн |
| 1000+ | 21.90 грн |
| DMTH4011SPD-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1454 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 87.15 грн |
| 10+ | 52.97 грн |
| 100+ | 34.88 грн |
| 500+ | 25.43 грн |
| 1000+ | 23.08 грн |
| DMTH4011SPDQ-13 |
![]() |
Виробник: Diodes Incorporated
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 11.1A PWRDI50
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.6W (Ta)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 11.1A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 805pF @ 20V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 50465 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 115.93 грн |
| 10+ | 67.69 грн |
| 100+ | 44.09 грн |
| 500+ | 32.63 грн |
| 1000+ | 30.96 грн |
| DMTH43M8LPSQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 40V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 22A PWRDI5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 2.7W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3367 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2562019 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 98.66 грн |
| 10+ | 70.94 грн |
| 100+ | 48.71 грн |
| 500+ | 35.21 грн |
| 1000+ | 32.62 грн |
| PI4IOE5V96224ZLEX |
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Виробник: Diodes Incorporated
Description: IC XPNDR 1MHZ I2C SMBUS 32TQFN
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 32-WFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I²C, SMBus
Number of I/O: 24
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 32-TQFN (3x6)
Current - Output Source/Sink: 25mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 1MHZ I2C SMBUS 32TQFN
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 32-WFQFN Exposed Pad
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I²C, SMBus
Number of I/O: 24
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 32-TQFN (3x6)
Current - Output Source/Sink: 25mA
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 10157 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 171.83 грн |
| 10+ | 148.37 грн |
| 25+ | 139.94 грн |
| 100+ | 111.89 грн |
| 250+ | 105.06 грн |
| 500+ | 91.93 грн |
| 1000+ | 74.92 грн |
| PI3WVR13412ZHEX |
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Виробник: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3500+ | 55.85 грн |
| PI3WVR13612ZLEX |
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Виробник: Diodes Incorporated
Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Tape & Reel (TR)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3500+ | 55.54 грн |
| PI3WVR13412ZHEX |
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Виробник: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
Description: DISPLAY SWITCH V-QFN3590-42
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
на замовлення 19374 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 203.90 грн |
| 10+ | 123.82 грн |
| 25+ | 104.76 грн |
| 100+ | 78.13 грн |
| 250+ | 68.22 грн |
| 500+ | 62.12 грн |
| 1000+ | 56.07 грн |
| PI3WVR13612ZLEX |
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Виробник: Diodes Incorporated
Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
Description: DISPLAY SWITCH W-QFN3590-52
Packaging: Cut Tape (CT)
Features: HDMI
Package / Case: 52-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Applications: DisplayPort
-3db Bandwidth: 7GHz
Supplier Device Package: 52-TQFN (3.5x9)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
на замовлення 15189 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 122.50 грн |
| 10+ | 87.01 грн |
| 25+ | 79.08 грн |
| 100+ | 66.08 грн |
| 250+ | 62.20 грн |
| 500+ | 59.86 грн |
| 1000+ | 56.98 грн |
| ADTC114YUAQ-7 |
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Виробник: Diodes Incorporated
Description: TRANS PREBIAS NPN 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 0.1A SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-323
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Power - Max: 330 mW
Frequency - Transition: 250 MHz
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
на замовлення 94360 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.44 грн |
| 33+ | 9.74 грн |
| 100+ | 5.99 грн |
| 500+ | 4.11 грн |
| 1000+ | 3.62 грн |
| BCR421UFDQ-7 |
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Виробник: Diodes Incorporated
Description: IC LED DRVR LIN PWM 350MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 350mA
Internal Switch(s): No
Supplier Device Package: U-DFN2020-6
Dimming: PWM
Voltage - Supply (Max): 18V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: IC LED DRVR LIN PWM 350MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Voltage - Output: 40V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Lighting, Signage
Current - Output / Channel: 350mA
Internal Switch(s): No
Supplier Device Package: U-DFN2020-6
Dimming: PWM
Voltage - Supply (Max): 18V
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 519664 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 64.95 грн |
| 10+ | 38.00 грн |
| 25+ | 31.38 грн |
| 100+ | 22.44 грн |
| 250+ | 19.00 грн |
| 500+ | 16.88 грн |
| 1000+ | 14.86 грн |
| DMP1009UFDF-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 12V 15A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
Description: MOSFET P-CH 12V 15A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 5A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 10 V
на замовлення 3696 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 13+ | 27.13 грн |
| 17+ | 19.24 грн |
| 100+ | 15.03 грн |
| 500+ | 14.02 грн |
| 1000+ | 12.00 грн |
| DMP3013SFV-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V
Description: MOSFET P-CH 30V 12A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V
Power Dissipation (Max): 940mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (Type UX)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V
на замовлення 14435 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.55 грн |
| 10+ | 34.36 грн |
| 100+ | 23.72 грн |
| 500+ | 17.05 грн |
| 1000+ | 15.38 грн |
| DMP34M4SPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 135A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
Description: MOSFET P-CH 30V 135A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 135A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 1.5W
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3775 pF @ 15 V
на замовлення 1480066 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 106.88 грн |
| 10+ | 72.92 грн |
| 100+ | 49.28 грн |
| 500+ | 36.48 грн |
| 1000+ | 33.34 грн |
| DMP4065SQ-7 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 40V 2.4A SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
Description: MOSFET P-CH 40V 2.4A SOT23 T&R
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.2A, 10V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 587 pF @ 20 V
на замовлення 5736 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.82 грн |
| 11+ | 31.11 грн |
| 100+ | 21.58 грн |
| 500+ | 15.81 грн |
| 1000+ | 12.85 грн |
| DPD13AWF-7 |
Виробник: Diodes Incorporated
Description: TVS DIODES 13VWM 21.5VC SOD123F
Description: TVS DIODES 13VWM 21.5VC SOD123F
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| HDS10M-13 |
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Виробник: Diodes Incorporated
Description: BRIDGE RECT 1PHASE 1KV 1A HDS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HDS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 1A HDS
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Mounting Type: Surface Mount
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: HDS
Part Status: Active
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 500 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 72315 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 12+ | 29.60 грн |
| 19+ | 17.50 грн |
| 100+ | 11.06 грн |
| 500+ | 7.18 грн |
| 1000+ | 6.44 грн |
| PI3DPX1202A2ZBEX |
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Виробник: Diodes Incorporated
Description: DISPLAY SWITCH V-QFN7070-48 T&R
Description: DISPLAY SWITCH V-QFN7070-48 T&R
на замовлення 5 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 163.61 грн |
| PI3PCIE3412AZHEX |
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Виробник: Diodes Incorporated
Description: PCI SWITCH 2:1 4 CHAN 42TQFN
Packaging: Cut Tape (CT)
Features: Bi-Directional, SATA, USB 3.0
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 8.2GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
Description: PCI SWITCH 2:1 4 CHAN 42TQFN
Packaging: Cut Tape (CT)
Features: Bi-Directional, SATA, USB 3.0
Package / Case: 42-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 8.2GHz
Supplier Device Package: 42-TQFN (9x3.5)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Part Status: Active
Number of Channels: 4
на замовлення 18233 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 138.12 грн |
| 10+ | 98.33 грн |
| 25+ | 89.56 грн |
| 100+ | 75.00 грн |
| 250+ | 70.68 грн |
| 500+ | 68.08 грн |
| 1000+ | 64.86 грн |
| PI3PCIE3412AZLEX |
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Виробник: Diodes Incorporated
Description: PCIE SWITCH W-QFN3060-40 T&R 3.5
Packaging: Cut Tape (CT)
Features: Bi-Directional, SATA, USB 3.0
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 8.2GHz
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
Description: PCIE SWITCH W-QFN3060-40 T&R 3.5
Packaging: Cut Tape (CT)
Features: Bi-Directional, SATA, USB 3.0
Package / Case: 40-WFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Applications: PCI Express®
On-State Resistance (Max): 5Ohm (Typ)
-3db Bandwidth: 8.2GHz
Supplier Device Package: 40-TQFN (3x6)
Voltage - Supply, Single (V+): 3V ~ 3.6V
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 4
на замовлення 14000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 260.63 грн |
| PI4IOE5V6408ZTAEX |
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Виробник: Diodes Incorporated
Description: IC XPNDR 1MHZ I2C 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 16-UQFN (1.8x2.6)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 1MHZ I2C 16UQFN
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 3.6V
Clock Frequency: 1 MHz
Interrupt Output: Yes
Supplier Device Package: 16-UQFN (1.8x2.6)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 10699 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 54.26 грн |
| 10+ | 37.37 грн |
| 25+ | 33.57 грн |
| 100+ | 27.61 грн |
| 250+ | 25.76 грн |
| 500+ | 24.64 грн |
| 1000+ | 23.33 грн |
| PI4IOE5V9535ZDEX |
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Виробник: Diodes Incorporated
Description: IC XPNDR 400KHZ I2C 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TQFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 400KHZ I2C 24TQFN
Packaging: Cut Tape (CT)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 16
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.3V ~ 5.5V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 24-TQFN (4x4)
Part Status: Active
DigiKey Programmable: Not Verified
на замовлення 46413 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 106.06 грн |
| 10+ | 74.74 грн |
| 25+ | 67.80 грн |
| 100+ | 56.47 грн |
| 250+ | 53.06 грн |
| 500+ | 51.97 грн |
| PI6CG15401ZHIEX |
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Виробник: Diodes Incorporated
Description: IC CLOCK GENERATOR 32TQFN
Description: IC CLOCK GENERATOR 32TQFN
товару немає в наявності
В кошику
од. на суму грн.
| PI7C9X752FAEX |
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Виробник: Diodes Incorporated
Description: IC BRIDGE DUAL UART 48TQFP
Description: IC BRIDGE DUAL UART 48TQFP
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PI7C9X794FCEX |
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Виробник: Diodes Incorporated
Description: IC BRIDGE QUAD UART 64LQFP
Description: IC BRIDGE QUAD UART 64LQFP
на замовлення 1000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PT7C433833AZEEX |
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Виробник: Diodes Incorporated
Description: IC RTC CLK/CALENDAR I2C 8TDFN
Packaging: Cut Tape (CT)
Features: Leap Year, NVSRAM, Square Wave Output
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 56B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TDFN (2x3)
Voltage - Supply, Battery: 1.5V ~ 3.7V
Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V
DigiKey Programmable: Not Verified
Description: IC RTC CLK/CALENDAR I2C 8TDFN
Packaging: Cut Tape (CT)
Features: Leap Year, NVSRAM, Square Wave Output
Package / Case: 8-WFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 56B
Interface: I2C, 2-Wire Serial
Type: Clock/Calendar
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 5.5V
Time Format: HH:MM:SS (12/24 hr)
Date Format: YY-MM-DD-dd
Supplier Device Package: 8-TDFN (2x3)
Voltage - Supply, Battery: 1.5V ~ 3.7V
Current - Timekeeping (Max): 125µA @ 2.7V ~ 5.5V
DigiKey Programmable: Not Verified
товару немає в наявності
В кошику
од. на суму грн.
| SDT30B100D1-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 100V 30A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
Description: DIODE SCHOTTKY 100V 30A TO2523
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-252-3
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 30 A
Current - Reverse Leakage @ Vr: 120 µA @ 100 V
на замовлення 5403 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 57.55 грн |
| 10+ | 35.23 грн |
| 100+ | 28.60 грн |
| 500+ | 20.71 грн |
| 1000+ | 18.74 грн |
| DPD13AWF-7 |
Виробник: Diodes Incorporated
Description: TVS DIODES 13VWM 21.5VC SOD123F
Description: TVS DIODES 13VWM 21.5VC SOD123F
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)В кошику од. на суму грн.
| PI6CB18200ZDIEX |
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Виробник: Diodes Incorporated
Description: CLOCK BUFFER,V-QFN4040-24
Description: CLOCK BUFFER,V-QFN4040-24
товару немає в наявності
В кошику
од. на суму грн.
| ZXMN6A08GQTC |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 3.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 3.8A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.8A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 459 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 8000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 4000+ | 23.02 грн |
| 8000+ | 21.75 грн |
| PI3DPX1205AZLBEX |
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Виробник: Diodes Incorporated
Description: ACTIVE DISPLAY W-QFN3060-40 T&R
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 6
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Voltage - Supply: 3.3V
Applications: DisplayPort
Data Rate (Max): 10Gbps
Supplier Device Package: 40-TQFN (4x6)
Signal Conditioning: Input Equalization
Description: ACTIVE DISPLAY W-QFN3060-40 T&R
Packaging: Cut Tape (CT)
Package / Case: 40-WFQFN Exposed Pad
Number of Channels: 6
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Voltage - Supply: 3.3V
Applications: DisplayPort
Data Rate (Max): 10Gbps
Supplier Device Package: 40-TQFN (4x6)
Signal Conditioning: Input Equalization
товару немає в наявності
В кошику
од. на суму грн.
| PI3HDX231ZLEX |
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Виробник: Diodes Incorporated
Description: IC INTERFACE SPECIALIZED 72TQFN
Packaging: Cut Tape (CT)
Package / Case: 72-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 72-TQFN (11x5)
Part Status: Active
Description: IC INTERFACE SPECIALIZED 72TQFN
Packaging: Cut Tape (CT)
Package / Case: 72-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C
Applications: HDMI Redriver, Level Shifter
Supplier Device Package: 72-TQFN (11x5)
Part Status: Active
на замовлення 93980 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 268.03 грн |
| 10+ | 231.66 грн |
| 25+ | 219.02 грн |
| 100+ | 178.12 грн |
| 250+ | 168.98 грн |
| 500+ | 151.63 грн |
| 1000+ | 125.78 грн |
| ZXTP56020FDBQ-7 |
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Виробник: Diodes Incorporated
Description: TRANS 2PNP 20V 2A U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2PNP 20V 2A U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 168000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 15.23 грн |
| 6000+ | 13.48 грн |
| 9000+ | 12.88 грн |
| 15000+ | 11.45 грн |
| 21000+ | 11.08 грн |
| 30000+ | 10.95 грн |
| ZXTP56020FDBQ-7 |
![]() |
Виробник: Diodes Incorporated
Description: TRANS 2PNP 20V 2A U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS 2PNP 20V 2A U-DFN2020-6
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 405mW
Current - Collector (Ic) (Max): 2A
Voltage - Collector Emitter Breakdown (Max): 20V
Vce Saturation (Max) @ Ib, Ic: 390mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 2V
Supplier Device Package: U-DFN2020-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 170441 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 6+ | 63.31 грн |
| 10+ | 37.84 грн |
| 100+ | 24.57 грн |
| 500+ | 17.69 грн |
| 1000+ | 15.96 грн |
| PI3EQX1004B1ZHEX |
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Виробник: Diodes Incorporated
Description: USB3 EQX V-QFN3590-42
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
Description: USB3 EQX V-QFN3590-42
Packaging: Tape & Reel (TR)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
на замовлення 52500 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3500+ | 105.51 грн |
| PI3EQX1004B1ZHEX |
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Виробник: Diodes Incorporated
Description: USB3 EQX V-QFN3590-42
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
Description: USB3 EQX V-QFN3590-42
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: CML
Type: Buffer, ReDriver
Input: CML
Operating Temperature: 125°C (TJ)
Voltage - Supply: 3V ~ 3.6V
Applications: USB 3.0
Data Rate (Max): 10Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Part Status: Active
на замовлення 55018 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 202.25 грн |
| 10+ | 145.44 грн |
| 25+ | 133.07 грн |
| 100+ | 112.21 грн |
| 250+ | 106.14 грн |
| 500+ | 102.50 грн |
| 1000+ | 97.86 грн |
| DMN61D9UWQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 400MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 440mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 400MA SOT323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2Ohm @ 50mA, 5V
Power Dissipation (Max): 440mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 28.5 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 14076478 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 20+ | 16.44 грн |
| 30+ | 10.85 грн |
| 100+ | 7.26 грн |
| 500+ | 5.22 грн |
| 1000+ | 4.69 грн |
| 2000+ | 4.23 грн |
| 5000+ | 3.66 грн |
| DMP3028LPSQ-13 |
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Виробник: Diodes Incorporated
Description: MOSFET P-CH 30V 21A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 21A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 1.28W
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: PowerDI5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V
Qualification: AEC-Q101
на замовлення 366422 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 73.17 грн |
| 10+ | 54.71 грн |
| 100+ | 37.88 грн |
| 500+ | 28.49 грн |
| 1000+ | 26.18 грн |
| DMT36M1LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 30V 65A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
Description: MOSFET N-CH 30V 65A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 2.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
на замовлення 619997 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 9+ | 37.82 грн |
| 12+ | 28.34 грн |
| 100+ | 19.40 грн |
| 500+ | 15.89 грн |
| 1000+ | 14.21 грн |
| DMTH6002LPS-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 60V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 167W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V
Description: MOSFET N-CH 60V 100A PWRDI5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 50A, 10V
Power Dissipation (Max): 167W
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6555 pF @ 30 V
на замовлення 8286 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 162.79 грн |
| 10+ | 106.01 грн |
| 100+ | 73.80 грн |
| 500+ | 55.54 грн |
| 1000+ | 54.90 грн |
| PDS4200HQ-13 |
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Виробник: Diodes Incorporated
Description: DIODE SCHOTTKY 200V 4A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 200V 4A POWERDI 5
Packaging: Cut Tape (CT)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Schottky
Current - Average Rectified (Io): 4A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3166 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 70.71 грн |
| 10+ | 44.57 грн |
| 100+ | 35.95 грн |
| 500+ | 26.27 грн |
| 1000+ | 23.34 грн |
| 2000+ | 21.97 грн |
| PI3DPX1203ZHEX |
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Виробник: Diodes Incorporated
Description: IC REDRIVER 8GBPS 42TQFN
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Voltage - Supply: 3.3V
Applications: DisplayPort
Data Rate (Max): 8Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
Description: IC REDRIVER 8GBPS 42TQFN
Packaging: Cut Tape (CT)
Package / Case: 42-VFQFN Exposed Pad
Number of Channels: 4
Mounting Type: Surface Mount
Output: DisplayPort
Type: Buffer, ReDriver
Input: DisplayPort
Voltage - Supply: 3.3V
Applications: DisplayPort
Data Rate (Max): 8Gbps
Supplier Device Package: 42-TQFN (9x3.5)
Signal Conditioning: Input Equalization
на замовлення 129 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 194.03 грн |
| 10+ | 139.26 грн |
| 25+ | 127.40 грн |
| 100+ | 107.34 грн |
| PI3USB32212ZLEX |
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Виробник: Diodes Incorporated
Description: USB3 SWITCH W-QFN3060-32 T&R 3.5
Packaging: Cut Tape (CT)
Features: USB 2.0, USB 3.0
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: USB
On-State Resistance (Max): 13Ohm
-3db Bandwidth: 10.6GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 2.97V ~ 3.63V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Part Status: Active
Number of Channels: 2
Description: USB3 SWITCH W-QFN3060-32 T&R 3.5
Packaging: Cut Tape (CT)
Features: USB 2.0, USB 3.0
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Applications: USB
On-State Resistance (Max): 13Ohm
-3db Bandwidth: 10.6GHz
Supplier Device Package: 32-TQFN (3x6)
Voltage - Supply, Single (V+): 2.97V ~ 3.63V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 1:2
Part Status: Active
Number of Channels: 2
на замовлення 29651 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 168.54 грн |
| 10+ | 120.02 грн |
| 25+ | 109.61 грн |
| 100+ | 92.11 грн |
| 250+ | 86.98 грн |
| 500+ | 83.89 грн |
| 1000+ | 80.02 грн |
| ZXTR2105FF-7 |
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Виробник: Diodes Incorporated
Description: IC REG LINEAR 5V 89MA SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 89mA
Operating Temperature: -65°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23F
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 46dB (100Hz)
Current - Supply (Max): 6.7 mA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 89MA SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 89mA
Operating Temperature: -65°C ~ 150°C (TJ)
Output Configuration: Positive
Voltage - Input (Max): 60V
Number of Regulators: 1
Supplier Device Package: SOT-23F
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 46dB (100Hz)
Current - Supply (Max): 6.7 mA
Grade: Automotive
Qualification: AEC-Q100
на замовлення 739112 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 17+ | 19.73 грн |
| 25+ | 12.75 грн |
| 28+ | 11.34 грн |
| 100+ | 9.12 грн |
| 250+ | 8.40 грн |
| 500+ | 7.97 грн |
| 1000+ | 7.48 грн |
| ADC144EUQ-13 |
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Виробник: Diodes Incorporated
Description: IC TRANSISTOR SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 270mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: IC TRANSISTOR SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 270mW
Current - Collector (Ic) (Max): 100mA
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 90000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 3.96 грн |
| 20000+ | 3.47 грн |
| 30000+ | 3.30 грн |
| 50000+ | 2.91 грн |
| 70000+ | 2.80 грн |
| BSS138K-13 |
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Виробник: Diodes Incorporated
Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
Description: MOSFET N-CH 50V 310MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 220mA, 10V
Power Dissipation (Max): 380mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 23.2 pF @ 25 V
на замовлення 5520000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 2.16 грн |
| 20000+ | 2.01 грн |
| 250000+ | 2.00 грн |
| D15V0H1U2LP-7B |
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Виробник: Diodes Incorporated
Description: TVS DIODE 15VWM 27V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 70pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 300W
Power Line Protection: No
Description: TVS DIODE 15VWM 27V X1DFN10062
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 70pF @ 1MHz
Current - Peak Pulse (10/1000µs): 12A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: X1-DFN1006-2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 16V
Voltage - Clamping (Max) @ Ipp: 27V
Power - Peak Pulse: 300W
Power Line Protection: No
на замовлення 750000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 10000+ | 3.94 грн |
| 20000+ | 3.64 грн |
| 30000+ | 3.57 грн |
| 50000+ | 3.01 грн |
| D55V0M1B2WSQ-7 |
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Виробник: Diodes Incorporated
Description: TVS DIODE 55VWM 100VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 55V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 57V
Voltage - Clamping (Max) @ Ipp: 100V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 55VWM 100VC SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 14pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 55V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 57V
Voltage - Clamping (Max) @ Ipp: 100V
Power - Peak Pulse: 200W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
на замовлення 66000 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3000+ | 5.78 грн |
| 6000+ | 4.84 грн |


















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