Продукція > ISSI, INTEGRATED SILICON SOLUTION INC > Всі товари виробника ISSI, INTEGRATED SILICON SOLUTION INC (5000) > Сторінка 79 з 84
| Фото | Назва | Виробник | Інформація |
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| IS66WVH8M8DBLL-100B1LI | ISSI, Integrated Silicon Solution Inc |
 Description: 64Mb, HyperRAM, 8Mbx8, 3.0V, 100Packaging: Tray Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 100 MHz Memory Format: PSRAM Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 40ns Memory Interface: HyperBus Access Time: 40 ns Memory Organization: 8M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS43TR16K01S2AL-125KBLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 16G, 1.35V, DDR3L, 1GX16,1600MT/ Packaging: Tape & Reel (TR) Package / Case: 96-LFBGA Mounting Type: Surface Mount Memory Size: 16Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-LWBGA (10x14) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 1G x 16 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IS42S16400N-7TL-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 64MBIT PAR 54TSOP II Packaging: Tape & Reel (TR) Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 143 MHz Memory Format: DRAM Supplier Device Package: 54-TSOP II Memory Interface: LVTTL Access Time: 5.4 ns Memory Organization: 4M x 16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IS42S16400N-6TL-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 64MBIT PAR 54TSOP II Packaging: Tape & Reel (TR) Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 54-TSOP II Memory Interface: LVTTL Access Time: 5.4 ns Memory Organization: 4M x 16 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IS42S16400N-7TL | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 64MBIT PAR 54TSOP II Packaging: Tray Package / Case: 54-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 3V ~ 3.6V Technology: SDRAM Clock Frequency: 143 MHz Memory Format: DRAM Supplier Device Package: 54-TSOP II Memory Interface: LVTTL Access Time: 5.4 ns Memory Organization: 4M x 16 |
на замовлення 48 шт: термін постачання 21-31 дні (днів) |
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| IS66WVS8M8FBLL-104NLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 32MB, SERIALRAM, 2.7V-3.6V, 104M Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 104 MHz Memory Format: PSRAM Supplier Device Package: 8-SOIC Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS66WVR8M8FBLL-104NLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 64MB, SERIALRAM, CONTINUOUS OPER Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 80°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 104 MHz Memory Format: PSRAM Supplier Device Package: 8-SOIC Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS66WVR8M8FALL-104NLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 64MB, SERIALRAM, CONTINUOUS OPER Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 80°C (TA) Voltage - Supply: 1.65V ~ 1.95V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 104 MHz Memory Format: PSRAM Supplier Device Package: 8-SOIC Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS66WVS8M8FALL-104NLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 32MB, SERIALRAM, 1.65V-1.95V, 10 Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 104 MHz Memory Format: PSRAM Supplier Device Package: 8-SOIC Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS66WVR8M8FALL-104NLI | ISSI, Integrated Silicon Solution Inc |
Description: 64MB, SERIALRAM, CONTINUOUS OPER Packaging: Tray Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 80°C (TA) Voltage - Supply: 1.65V ~ 1.95V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 104 MHz Memory Format: PSRAM Supplier Device Package: 8-SOIC Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS66WVS8M8FBLL-104NLI | ISSI, Integrated Silicon Solution Inc |
Description: 32MB, SERIALRAM, 2.7V-3.6V, 104M Packaging: Tray Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 104 MHz Memory Format: PSRAM Supplier Device Package: 8-SOIC Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS66WVS8M8FALL-104NLI | ISSI, Integrated Silicon Solution Inc |
Description: 32MB, SERIALRAM, 1.65V-1.95V, 10 Packaging: Tray Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 1.95V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 104 MHz Memory Format: PSRAM Supplier Device Package: 8-SOIC Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IS66WVR8M8FBLL-104NLI | ISSI, Integrated Silicon Solution Inc |
Description: 64MB, SERIALRAM, CONTINUOUS OPER Packaging: Tray Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Memory Size: 64Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 80°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: PSRAM (Pseudo SRAM) Clock Frequency: 104 MHz Memory Format: PSRAM Supplier Device Package: 8-SOIC Memory Interface: SPI - Quad I/O Access Time: 7 ns Memory Organization: 8M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IS43LQ32256B-062BLI | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 8GBIT LVSTL 200VFBGA Packaging: Tray Package / Case: 200-VFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.6 GHz Memory Format: DRAM Supplier Device Package: 200-VFBGA (10x14.5) Memory Interface: LVSTL Memory Organization: 256M x 32 |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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| IS43LQ32256B-053BLI | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 8GBIT LVSTL 200VFBGA Packaging: Tray Package / Case: 200-VFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.867 GHz Memory Format: DRAM Supplier Device Package: 200-VFBGA (10x14.5) Memory Interface: LVSTL Memory Organization: 256M x 32 |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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| IS43LQ32256B-062BLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.06-1.17/1.70-1.95V, LPDDR4 Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.6 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 256M x 32 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS43LQ32256BL-062BLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 0.57-0.65V/1.06-1.17/1.70-1. Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.6 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 256M x 32 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS43LQ32256BL-053BLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 0.57-0.65V/1.06-1.17/1.70-1. Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.866 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 256M x 32 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS43LQ32256B-053BLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 1.06-1.17/1.70-1.95V, LPDDR4 Packaging: Tape & Reel (TR) Package / Case: 200-TFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4 Clock Frequency: 1.866 GHz Memory Format: DRAM Supplier Device Package: 200-TFBGA (10x14.5) Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 256M x 32 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS43LQ32256BL-062BLI | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 0.57-0.65V/1.06-1.17/1.70-1. Packaging: Tray Package / Case: 200-VFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 1.6 GHz Memory Format: DRAM Supplier Device Package: 200-VFBGA (10x14.5) Memory Interface: LVSTL Memory Organization: 256M x 32 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS43LQ32256BL-053BLI | ISSI, Integrated Silicon Solution Inc |
Description: 8G, 0.57-0.65V/1.06-1.17/1.70-1. Packaging: Tray Package / Case: 200-VFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 1.867 GHz Memory Format: DRAM Supplier Device Package: 200-VFBGA (10x14.5) Memory Interface: LVSTL Memory Organization: 256M x 32 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS46LQ32256BL-062BLA1-TR | ISSI, Integrated Silicon Solution Inc |
Description: AUTOMOTIVE (TC: -40 TO +95C), 8G Packaging: Tape & Reel (TR) Package / Case: 200-VFBGA Mounting Type: Surface Mount Memory Size: 8Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR4X Clock Frequency: 1.6 GHz Memory Format: DRAM Supplier Device Package: 200-VFBGA (10x14.5) Grade: Automotive Write Cycle Time - Word, Page: 18ns Memory Interface: LVSTL Access Time: 3.5 ns Memory Organization: 256M x 32 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS62WV6416FBLL-45TLI | ISSI, Integrated Silicon Solution Inc |
Description: IC SRAM 1MBIT PAR Packaging: Bulk Package / Case: 44-TSOP (0.400", 10.16mm Width) Mounting Type: Surface Mount Memory Size: 1Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.2V ~ 3.6V Technology: SRAM - Asynchronous Memory Format: SRAM Supplier Device Package: 44-TSOP II Write Cycle Time - Word, Page: 45ns Memory Interface: Parallel Access Time: 45 ns Memory Organization: 64K x 16 DigiKey Programmable: Not Verified |
на замовлення 675 шт: термін постачання 21-31 дні (днів) |
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IS34ML04G088-TLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: 4GB (X8, 8BIT ECC), TSOP-48, 3V, Packaging: Tape & Reel (TR) Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Memory Format: FLASH Supplier Device Package: 48-TSOP I Write Cycle Time - Word, Page: 25ns, 700µs Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IS34ML04G088-TLI | ISSI, Integrated Silicon Solution Inc |
Description: 4GB (X8, 8BIT ECC), TSOP-48, 3V, Packaging: Tray Package / Case: 48-TFSOP (0.724", 18.40mm Width) Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Memory Format: FLASH Supplier Device Package: 48-TSOP I Write Cycle Time - Word, Page: 25ns, 700µs Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IS35ML04G088-BLA2-TR | ISSI, Integrated Silicon Solution Inc |
Description: 4GB (X8, 8BIT ECC), TSOP-48, 3V, Packaging: Tape & Reel (TR) Package / Case: 63-VFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Memory Format: FLASH Supplier Device Package: 63-VFBGA (9x11) Grade: Automotive Write Cycle Time - Word, Page: 25ns, 700µs Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 8 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS35ML04G088-BLA2 | ISSI, Integrated Silicon Solution Inc |
Description: 4GB (X8, 8BIT ECC), TSOP-48, 3V, Packaging: Tray Package / Case: 63-VFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (SLC) Memory Format: FLASH Supplier Device Package: 63-VFBGA (9x11) Grade: Automotive Write Cycle Time - Word, Page: 25ns, 700µs Memory Interface: Parallel Access Time: 20 ns Memory Organization: 512M x 8 Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IS43TR16640CL-125JBL-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 1GBIT PARALLEL 96TWBGA Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: 0°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Grade: Automotive Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IS46TR16640CL-125JBLA1-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 1GBIT PARALLEL 96TWBGA Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Grade: Automotive Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IS46TR16640CL-125JBLA2-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 1GBIT PARALLEL 96TWBGA Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Grade: Automotive Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IS46TR16640CL-125JBLA1 | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 1GBIT PARALLEL 96TWBGA Packaging: Tray Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Grade: Automotive Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IS46TR16640CL-125JBLA2 | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 1GBIT PARALLEL 96TWBGA Packaging: Tray Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Grade: Automotive Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 64M x 16 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IS46TR16128CL-125KBLA1-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 2GBIT PARALLEL 96TWBGA Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 128M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IS43TR82560CL-125KBLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 2GBIT PARALLEL 78TWBGA Packaging: Tape & Reel (TR) Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 78-TWBGA (8x10.5) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 256M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IS46TR16128CL-125KBLA1 | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 2GBIT PARALLEL 96TWBGA Packaging: Tray Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 128M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IS43TR82560CL-125KBLI | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 2GBIT PARALLEL 78TWBGA Packaging: Tray Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 95°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 78-TWBGA (8x10.5) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 256M x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IS46TR16128CL-125KBLA2-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 2GBIT PARALLEL 96TWBGA Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 128M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IS46TR16128CL-125KBLA2 | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 2GBIT PARALLEL 96TWBGA Packaging: Tray Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 2Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 128M x 16 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IS46TR81280CL-125JBLA2-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 1GBIT PARALLEL 78TWBGA Packaging: Tape & Reel (TR) Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 78-TWBGA (8x10.5) Grade: Automotive Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 128M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IS46TR81280CL-125JBLA2 | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 1GBIT PARALLEL 78TWBGA Packaging: Tray Package / Case: 78-TFBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C (TC) Voltage - Supply: 1.283V ~ 1.45V Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 78-TWBGA (8x10.5) Grade: Automotive Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 20 ns Memory Organization: 128M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IS46TR16256ECL-125LB2LA1-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 4GBIT PAR 96TWBGA Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Grade: Automotive Memory Interface: Parallel Memory Organization: 512M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS46TR16256ECL-125LB2LA2 | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 4GBIT PAR 96TWBGA Packaging: Bulk Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Grade: Automotive Memory Interface: Parallel Memory Organization: 512M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS46TR16256ECL-125LB2LA2-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 4GBIT PAR 96TWBGA Packaging: Tape & Reel (TR) Package / Case: 96-TFBGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 105°C Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-TWBGA (9x13) Grade: Automotive Memory Interface: Parallel Memory Organization: 512M x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IS43TR16256ECL-125LB2LI | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 4GBIT PAR 96BGA Packaging: Bulk Package / Case: 96-BGA Mounting Type: Surface Mount Memory Size: 4Gbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C Technology: SDRAM - DDR3L Clock Frequency: 800 MHz Memory Format: DRAM Supplier Device Package: 96-BGA Memory Interface: Parallel Memory Organization: 256M x 16 DigiKey Programmable: Not Verified |
на замовлення 114 шт: термін постачання 21-31 дні (днів) |
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| IS43LR16160H-6BL-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 256MBIT PAR 60TFBGA Packaging: Tape & Reel (TR) Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 60-TFBGA (8x10) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 5.5 ns Memory Organization: 16M x 16 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS43LR16160H-6BLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 256MBIT PAR 60TFBGA Packaging: Tape & Reel (TR) Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 60-TFBGA (8x10) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 5.5 ns Memory Organization: 16M x 16 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS43LR16160H-6BL | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 256MBIT PAR 60TFBGA Packaging: Bulk Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: 0°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 60-TFBGA (8x10) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 5.5 ns Memory Organization: 16M x 16 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS43LR16160H-6BLI | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 256MBIT PAR 60TFBGA Packaging: Bulk Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 256Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 166 MHz Memory Format: DRAM Supplier Device Package: 60-TFBGA (8x10) Write Cycle Time - Word, Page: 15ns Memory Interface: Parallel Access Time: 5.5 ns Memory Organization: 16M x 16 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS43LR16320C-5BLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC DRAM 256MBIT PAR 60TFBGA Packaging: Tape & Reel (TR) Package / Case: 60-TFBGA Mounting Type: Surface Mount Memory Size: 512Mbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.7V ~ 1.95V Technology: SDRAM - Mobile LPDDR Clock Frequency: 200 MHz Memory Format: DRAM Supplier Device Package: 60-TFBGA (8x10) Write Cycle Time - Word, Page: 15ns Memory Interface: LVCMOS Access Time: 5 ns Memory Organization: 32M x 16 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IS25WP01GG-RHLE-TR | ISSI, Integrated Silicon Solution Inc |
Description: 1GB QPI/QSPI, 24-BALL LFBGA 6X8M Packaging: Tape & Reel (TR) Package / Case: 24-TBGA Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 1.95V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 24-TFBGA (6x8) Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 5.5 ns Memory Organization: 128M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IS25WP01GG-RMLE-TR | ISSI, Integrated Silicon Solution Inc |
Description: 1GB QPI/QSPI, 16-PIN SOP 300MIL, Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 1.95V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 5.5 ns Memory Organization: 128M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
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IS25WP01GG-RMLE-TY | ISSI, Integrated Silicon Solution Inc |
Description: 1GB QPI/QSPI, 16-PIN SOP 300MIL, Packaging: Tray Package / Case: 16-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Memory Size: 1Gbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.65V ~ 1.95V Technology: FLASH - NOR (SLC) Clock Frequency: 133 MHz Memory Format: FLASH Supplier Device Package: 16-SOIC Write Cycle Time - Word, Page: 70µs, 2ms Memory Interface: SPI - Quad I/O, QPI, DTR Access Time: 5.5 ns Memory Organization: 128M x 8 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IS21TF128G-JCLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC FLASH 1TBIT EMMC 153VFBGA Packaging: Tape & Reel (TR) Package / Case: 153-VFBGA Mounting Type: Surface Mount Memory Size: 1Tbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (TLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 153-VFBGA (11.5x13) Memory Interface: eMMC_5.1 Memory Organization: 128G x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IS21TF128G-JQLI-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC FLASH 1TBIT EMMC 100LFBGA Packaging: Tape & Reel (TR) Package / Case: 100-LBGA Mounting Type: Surface Mount Memory Size: 1Tbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (TLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 100-LFBGA (14x18) Memory Interface: eMMC_5.1 Memory Organization: 128G x 8 DigiKey Programmable: Not Verified |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IS22TF128G-JCLA1-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC FLASH 1TBIT EMMC 153VFBGA Packaging: Tape & Reel (TR) Package / Case: 153-VFBGA Mounting Type: Surface Mount Memory Size: 1Tbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (TLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 153-VFBGA (11.5x13) Grade: Automotive Memory Interface: eMMC_5.1 Memory Organization: 128G x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IS22TF128G-JQLA1-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC FLASH 1TBIT EMMC 100LFBGA Packaging: Tape & Reel (TR) Package / Case: 100-LBGA Mounting Type: Surface Mount Memory Size: 1Tbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (TLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 100-LFBGA (14x18) Grade: Automotive Memory Interface: eMMC_5.1 Memory Organization: 128G x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IS22TF128G-JCLA1 | ISSI, Integrated Silicon Solution Inc |
Description: IC FLASH 1TBIT EMMC 153VFBGA Packaging: Bulk Package / Case: 153-VFBGA Mounting Type: Surface Mount Memory Size: 1Tbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (TLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 153-VFBGA (11.5x13) Grade: Automotive Memory Interface: eMMC_5.1 Memory Organization: 128G x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
| IS22TF128G-JCLA2-TR | ISSI, Integrated Silicon Solution Inc |
Description: IC FLASH 1TBIT EMMC 153VFBGA Packaging: Tape & Reel (TR) Package / Case: 153-VFBGA Mounting Type: Surface Mount Memory Size: 1Tbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (TLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 153-VFBGA (11.5x13) Grade: Automotive Memory Interface: eMMC_5.1 Memory Organization: 128G x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||||||||
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IS22TF128G-JQLA1 | ISSI, Integrated Silicon Solution Inc |
Description: IC FLASH 1TBIT EMMC 100LFBGA Packaging: Bulk Package / Case: 100-LBGA Mounting Type: Surface Mount Memory Size: 1Tbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (TLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 100-LFBGA (14x18) Grade: Automotive Memory Interface: eMMC_5.1 Memory Organization: 128G x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||||
| IS22TF128G-JCLA2 | ISSI, Integrated Silicon Solution Inc |
Description: IC FLASH 1TBIT EMMC 153VFBGA Packaging: Bulk Package / Case: 153-VFBGA Mounting Type: Surface Mount Memory Size: 1Tbit Memory Type: Non-Volatile Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: FLASH - NAND (TLC) Clock Frequency: 200 MHz Memory Format: FLASH Supplier Device Package: 153-VFBGA (11.5x13) Grade: Automotive Memory Interface: eMMC_5.1 Memory Organization: 128G x 8 DigiKey Programmable: Not Verified Qualification: AEC-Q100 |
товару немає в наявності |
В кошику од. на суму грн. |
| IS66WVH8M8DBLL-100B1LI |
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Виробник: ISSI, Integrated Silicon Solution Inc
Description: 64Mb, HyperRAM, 8Mbx8, 3.0V, 100
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-TFBGA (6x8)
Write Cycle Time - Word, Page: 40ns
Memory Interface: HyperBus
Access Time: 40 ns
Memory Organization: 8M x 8
Description: 64Mb, HyperRAM, 8Mbx8, 3.0V, 100
Packaging: Tray
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 100 MHz
Memory Format: PSRAM
Supplier Device Package: 24-TFBGA (6x8)
Write Cycle Time - Word, Page: 40ns
Memory Interface: HyperBus
Access Time: 40 ns
Memory Organization: 8M x 8
товару немає в наявності
В кошику
од. на суму грн.
| IS43TR16K01S2AL-125KBLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 16G, 1.35V, DDR3L, 1GX16,1600MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-LWBGA (10x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 1G x 16
Description: 16G, 1.35V, DDR3L, 1GX16,1600MT/
Packaging: Tape & Reel (TR)
Package / Case: 96-LFBGA
Mounting Type: Surface Mount
Memory Size: 16Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-LWBGA (10x14)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 1G x 16
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16400N-7TL-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 64MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 143 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Memory Interface: LVTTL
Access Time: 5.4 ns
Memory Organization: 4M x 16
Description: IC DRAM 64MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 143 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Memory Interface: LVTTL
Access Time: 5.4 ns
Memory Organization: 4M x 16
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16400N-6TL-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 64MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Memory Interface: LVTTL
Access Time: 5.4 ns
Memory Organization: 4M x 16
Description: IC DRAM 64MBIT PAR 54TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Memory Interface: LVTTL
Access Time: 5.4 ns
Memory Organization: 4M x 16
товару немає в наявності
В кошику
од. на суму грн.
| IS42S16400N-7TL |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 64MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 143 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Memory Interface: LVTTL
Access Time: 5.4 ns
Memory Organization: 4M x 16
Description: IC DRAM 64MBIT PAR 54TSOP II
Packaging: Tray
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: SDRAM
Clock Frequency: 143 MHz
Memory Format: DRAM
Supplier Device Package: 54-TSOP II
Memory Interface: LVTTL
Access Time: 5.4 ns
Memory Organization: 4M x 16
на замовлення 48 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 119.78 грн |
| 10+ | 107.79 грн |
| 25+ | 104.72 грн |
| IS66WVS8M8FBLL-104NLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 32MB, SERIALRAM, 2.7V-3.6V, 104M
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 104 MHz
Memory Format: PSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 8M x 8
Description: 32MB, SERIALRAM, 2.7V-3.6V, 104M
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 104 MHz
Memory Format: PSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 8M x 8
товару немає в наявності
В кошику
од. на суму грн.
| IS66WVR8M8FBLL-104NLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 64MB, SERIALRAM, CONTINUOUS OPER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 80°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 104 MHz
Memory Format: PSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 8M x 8
Description: 64MB, SERIALRAM, CONTINUOUS OPER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 80°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 104 MHz
Memory Format: PSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 8M x 8
товару немає в наявності
В кошику
од. на суму грн.
| IS66WVR8M8FALL-104NLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 64MB, SERIALRAM, CONTINUOUS OPER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 80°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 104 MHz
Memory Format: PSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 8M x 8
Description: 64MB, SERIALRAM, CONTINUOUS OPER
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 80°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 104 MHz
Memory Format: PSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 8M x 8
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| IS66WVS8M8FALL-104NLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 32MB, SERIALRAM, 1.65V-1.95V, 10
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 104 MHz
Memory Format: PSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 8M x 8
Description: 32MB, SERIALRAM, 1.65V-1.95V, 10
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 104 MHz
Memory Format: PSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 8M x 8
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| IS66WVR8M8FALL-104NLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 64MB, SERIALRAM, CONTINUOUS OPER
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 80°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 104 MHz
Memory Format: PSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 8M x 8
Description: 64MB, SERIALRAM, CONTINUOUS OPER
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 80°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 104 MHz
Memory Format: PSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 8M x 8
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| IS66WVS8M8FBLL-104NLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 32MB, SERIALRAM, 2.7V-3.6V, 104M
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 104 MHz
Memory Format: PSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 8M x 8
Description: 32MB, SERIALRAM, 2.7V-3.6V, 104M
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 104 MHz
Memory Format: PSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 8M x 8
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| IS66WVS8M8FALL-104NLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 32MB, SERIALRAM, 1.65V-1.95V, 10
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 104 MHz
Memory Format: PSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 8M x 8
Description: 32MB, SERIALRAM, 1.65V-1.95V, 10
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 104 MHz
Memory Format: PSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 8M x 8
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од. на суму грн.
| IS66WVR8M8FBLL-104NLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 64MB, SERIALRAM, CONTINUOUS OPER
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 80°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 104 MHz
Memory Format: PSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 8M x 8
Description: 64MB, SERIALRAM, CONTINUOUS OPER
Packaging: Tray
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 64Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 80°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: PSRAM (Pseudo SRAM)
Clock Frequency: 104 MHz
Memory Format: PSRAM
Supplier Device Package: 8-SOIC
Memory Interface: SPI - Quad I/O
Access Time: 7 ns
Memory Organization: 8M x 8
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| IS43LQ32256B-062BLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 8GBIT LVSTL 200VFBGA
Packaging: Tray
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Memory Interface: LVSTL
Memory Organization: 256M x 32
Description: IC DRAM 8GBIT LVSTL 200VFBGA
Packaging: Tray
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Memory Interface: LVSTL
Memory Organization: 256M x 32
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1750.48 грн |
| 10+ | 1236.36 грн |
| 25+ | 1121.20 грн |
| 80+ | 948.13 грн |
| IS43LQ32256B-053BLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 8GBIT LVSTL 200VFBGA
Packaging: Tray
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.867 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Memory Interface: LVSTL
Memory Organization: 256M x 32
Description: IC DRAM 8GBIT LVSTL 200VFBGA
Packaging: Tray
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.867 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Memory Interface: LVSTL
Memory Organization: 256M x 32
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1791.79 грн |
| 10+ | 1267.78 грн |
| 25+ | 1150.38 грн |
| 80+ | 973.52 грн |
| IS43LQ32256B-062BLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.06-1.17/1.70-1.95V, LPDDR4
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 256M x 32
Description: 8G, 1.06-1.17/1.70-1.95V, LPDDR4
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 256M x 32
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| IS43LQ32256BL-062BLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 0.57-0.65V/1.06-1.17/1.70-1.
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 256M x 32
Description: 8G, 0.57-0.65V/1.06-1.17/1.70-1.
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 256M x 32
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В кошику
од. на суму грн.
| IS43LQ32256BL-053BLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 0.57-0.65V/1.06-1.17/1.70-1.
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 256M x 32
Description: 8G, 0.57-0.65V/1.06-1.17/1.70-1.
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 256M x 32
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од. на суму грн.
| IS43LQ32256B-053BLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 1.06-1.17/1.70-1.95V, LPDDR4
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 256M x 32
Description: 8G, 1.06-1.17/1.70-1.95V, LPDDR4
Packaging: Tape & Reel (TR)
Package / Case: 200-TFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4
Clock Frequency: 1.866 GHz
Memory Format: DRAM
Supplier Device Package: 200-TFBGA (10x14.5)
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 256M x 32
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од. на суму грн.
| IS43LQ32256BL-062BLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 0.57-0.65V/1.06-1.17/1.70-1.
Packaging: Tray
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Memory Interface: LVSTL
Memory Organization: 256M x 32
Description: 8G, 0.57-0.65V/1.06-1.17/1.70-1.
Packaging: Tray
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Memory Interface: LVSTL
Memory Organization: 256M x 32
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од. на суму грн.
| IS43LQ32256BL-053BLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 8G, 0.57-0.65V/1.06-1.17/1.70-1.
Packaging: Tray
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 1.867 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Memory Interface: LVSTL
Memory Organization: 256M x 32
Description: 8G, 0.57-0.65V/1.06-1.17/1.70-1.
Packaging: Tray
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 1.867 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Memory Interface: LVSTL
Memory Organization: 256M x 32
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од. на суму грн.
| IS46LQ32256BL-062BLA1-TR |
Виробник: ISSI, Integrated Silicon Solution Inc
Description: AUTOMOTIVE (TC: -40 TO +95C), 8G
Packaging: Tape & Reel (TR)
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 256M x 32
Qualification: AEC-Q100
Description: AUTOMOTIVE (TC: -40 TO +95C), 8G
Packaging: Tape & Reel (TR)
Package / Case: 200-VFBGA
Mounting Type: Surface Mount
Memory Size: 8Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR4X
Clock Frequency: 1.6 GHz
Memory Format: DRAM
Supplier Device Package: 200-VFBGA (10x14.5)
Grade: Automotive
Write Cycle Time - Word, Page: 18ns
Memory Interface: LVSTL
Access Time: 3.5 ns
Memory Organization: 256M x 32
Qualification: AEC-Q100
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од. на суму грн.
| IS62WV6416FBLL-45TLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC SRAM 1MBIT PAR
Packaging: Bulk
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Description: IC SRAM 1MBIT PAR
Packaging: Bulk
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.2V ~ 3.6V
Technology: SRAM - Asynchronous
Memory Format: SRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 45ns
Memory Interface: Parallel
Access Time: 45 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
на замовлення 675 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 156.13 грн |
| 10+ | 136.75 грн |
| 25+ | 133.07 грн |
| 50+ | 124.22 грн |
| 135+ | 111.06 грн |
| 270+ | 110.73 грн |
| 540+ | 107.27 грн |
| IS34ML04G088-TLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 4GB (X8, 8BIT ECC), TSOP-48, 3V,
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns, 700µs
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 8
Description: 4GB (X8, 8BIT ECC), TSOP-48, 3V,
Packaging: Tape & Reel (TR)
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns, 700µs
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 8
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од. на суму грн.
| IS34ML04G088-TLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 4GB (X8, 8BIT ECC), TSOP-48, 3V,
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns, 700µs
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 8
Description: 4GB (X8, 8BIT ECC), TSOP-48, 3V,
Packaging: Tray
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 48-TSOP I
Write Cycle Time - Word, Page: 25ns, 700µs
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 8
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| IS35ML04G088-BLA2-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 4GB (X8, 8BIT ECC), TSOP-48, 3V,
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Grade: Automotive
Write Cycle Time - Word, Page: 25ns, 700µs
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 8
Qualification: AEC-Q100
Description: 4GB (X8, 8BIT ECC), TSOP-48, 3V,
Packaging: Tape & Reel (TR)
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Grade: Automotive
Write Cycle Time - Word, Page: 25ns, 700µs
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 8
Qualification: AEC-Q100
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| IS35ML04G088-BLA2 |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 4GB (X8, 8BIT ECC), TSOP-48, 3V,
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Grade: Automotive
Write Cycle Time - Word, Page: 25ns, 700µs
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 8
Qualification: AEC-Q100
Description: 4GB (X8, 8BIT ECC), TSOP-48, 3V,
Packaging: Tray
Package / Case: 63-VFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (SLC)
Memory Format: FLASH
Supplier Device Package: 63-VFBGA (9x11)
Grade: Automotive
Write Cycle Time - Word, Page: 25ns, 700µs
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 512M x 8
Qualification: AEC-Q100
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| IS43TR16640CL-125JBL-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 1GBIT PARALLEL 96TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 1GBIT PARALLEL 96TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| IS46TR16640CL-125JBLA1-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 1GBIT PARALLEL 96TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 1GBIT PARALLEL 96TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| IS46TR16640CL-125JBLA2-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 1GBIT PARALLEL 96TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 1GBIT PARALLEL 96TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| IS46TR16640CL-125JBLA1 |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 1GBIT PARALLEL 96TWBGA
Packaging: Tray
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 1GBIT PARALLEL 96TWBGA
Packaging: Tray
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| IS46TR16640CL-125JBLA2 |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 1GBIT PARALLEL 96TWBGA
Packaging: Tray
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 1GBIT PARALLEL 96TWBGA
Packaging: Tray
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 64M x 16
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| IS46TR16128CL-125KBLA1-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 2GBIT PARALLEL 96TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 2GBIT PARALLEL 96TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
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| IS43TR82560CL-125KBLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 2GBIT PARALLEL 78TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Description: IC DRAM 2GBIT PARALLEL 78TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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| IS46TR16128CL-125KBLA1 |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 2GBIT PARALLEL 96TWBGA
Packaging: Tray
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 2GBIT PARALLEL 96TWBGA
Packaging: Tray
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
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| IS43TR82560CL-125KBLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 2GBIT PARALLEL 78TWBGA
Packaging: Tray
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
Description: IC DRAM 2GBIT PARALLEL 78TWBGA
Packaging: Tray
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 95°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 256M x 8
DigiKey Programmable: Not Verified
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| IS46TR16128CL-125KBLA2-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 2GBIT PARALLEL 96TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 2GBIT PARALLEL 96TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
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| IS46TR16128CL-125KBLA2 |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 2GBIT PARALLEL 96TWBGA
Packaging: Tray
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 2GBIT PARALLEL 96TWBGA
Packaging: Tray
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 2Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 16
DigiKey Programmable: Not Verified
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| IS46TR81280CL-125JBLA2-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 1GBIT PARALLEL 78TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 1GBIT PARALLEL 78TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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В кошику
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| IS46TR81280CL-125JBLA2 |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 1GBIT PARALLEL 78TWBGA
Packaging: Tray
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 1GBIT PARALLEL 78TWBGA
Packaging: Tray
Package / Case: 78-TFBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C (TC)
Voltage - Supply: 1.283V ~ 1.45V
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 78-TWBGA (8x10.5)
Grade: Automotive
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 20 ns
Memory Organization: 128M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| IS46TR16256ECL-125LB2LA1-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 4GBIT PAR 96TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Grade: Automotive
Memory Interface: Parallel
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 4GBIT PAR 96TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Grade: Automotive
Memory Interface: Parallel
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| IS46TR16256ECL-125LB2LA2 |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 4GBIT PAR 96TWBGA
Packaging: Bulk
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Grade: Automotive
Memory Interface: Parallel
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 4GBIT PAR 96TWBGA
Packaging: Bulk
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Grade: Automotive
Memory Interface: Parallel
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| IS46TR16256ECL-125LB2LA2-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 4GBIT PAR 96TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Grade: Automotive
Memory Interface: Parallel
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC DRAM 4GBIT PAR 96TWBGA
Packaging: Tape & Reel (TR)
Package / Case: 96-TFBGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 105°C
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-TWBGA (9x13)
Grade: Automotive
Memory Interface: Parallel
Memory Organization: 512M x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| IS43TR16256ECL-125LB2LI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 4GBIT PAR 96BGA
Packaging: Bulk
Package / Case: 96-BGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-BGA
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
Description: IC DRAM 4GBIT PAR 96BGA
Packaging: Bulk
Package / Case: 96-BGA
Mounting Type: Surface Mount
Memory Size: 4Gbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C
Technology: SDRAM - DDR3L
Clock Frequency: 800 MHz
Memory Format: DRAM
Supplier Device Package: 96-BGA
Memory Interface: Parallel
Memory Organization: 256M x 16
DigiKey Programmable: Not Verified
на замовлення 114 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1111.09 грн |
| 10+ | 992.22 грн |
| 25+ | 961.21 грн |
| 50+ | 880.19 грн |
| IS43LR16160H-6BL-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 60TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 60-TFBGA (8x10)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.5 ns
Memory Organization: 16M x 16
Description: IC DRAM 256MBIT PAR 60TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 60-TFBGA (8x10)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.5 ns
Memory Organization: 16M x 16
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| IS43LR16160H-6BLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 60TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 60-TFBGA (8x10)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.5 ns
Memory Organization: 16M x 16
Description: IC DRAM 256MBIT PAR 60TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 60-TFBGA (8x10)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.5 ns
Memory Organization: 16M x 16
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| IS43LR16160H-6BL |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 60TFBGA
Packaging: Bulk
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 60-TFBGA (8x10)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.5 ns
Memory Organization: 16M x 16
Description: IC DRAM 256MBIT PAR 60TFBGA
Packaging: Bulk
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 60-TFBGA (8x10)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.5 ns
Memory Organization: 16M x 16
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| IS43LR16160H-6BLI |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 60TFBGA
Packaging: Bulk
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 60-TFBGA (8x10)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.5 ns
Memory Organization: 16M x 16
Description: IC DRAM 256MBIT PAR 60TFBGA
Packaging: Bulk
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 256Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 166 MHz
Memory Format: DRAM
Supplier Device Package: 60-TFBGA (8x10)
Write Cycle Time - Word, Page: 15ns
Memory Interface: Parallel
Access Time: 5.5 ns
Memory Organization: 16M x 16
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| IS43LR16320C-5BLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC DRAM 256MBIT PAR 60TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 60-TFBGA (8x10)
Write Cycle Time - Word, Page: 15ns
Memory Interface: LVCMOS
Access Time: 5 ns
Memory Organization: 32M x 16
Description: IC DRAM 256MBIT PAR 60TFBGA
Packaging: Tape & Reel (TR)
Package / Case: 60-TFBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Technology: SDRAM - Mobile LPDDR
Clock Frequency: 200 MHz
Memory Format: DRAM
Supplier Device Package: 60-TFBGA (8x10)
Write Cycle Time - Word, Page: 15ns
Memory Interface: LVCMOS
Access Time: 5 ns
Memory Organization: 32M x 16
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| IS25WP01GG-RHLE-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 1GB QPI/QSPI, 24-BALL LFBGA 6X8M
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Write Cycle Time - Word, Page: 70µs, 2ms
Memory Interface: SPI - Quad I/O, QPI, DTR
Access Time: 5.5 ns
Memory Organization: 128M x 8
Description: 1GB QPI/QSPI, 24-BALL LFBGA 6X8M
Packaging: Tape & Reel (TR)
Package / Case: 24-TBGA
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 24-TFBGA (6x8)
Write Cycle Time - Word, Page: 70µs, 2ms
Memory Interface: SPI - Quad I/O, QPI, DTR
Access Time: 5.5 ns
Memory Organization: 128M x 8
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| IS25WP01GG-RMLE-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 1GB QPI/QSPI, 16-PIN SOP 300MIL,
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Write Cycle Time - Word, Page: 70µs, 2ms
Memory Interface: SPI - Quad I/O, QPI, DTR
Access Time: 5.5 ns
Memory Organization: 128M x 8
Description: 1GB QPI/QSPI, 16-PIN SOP 300MIL,
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Write Cycle Time - Word, Page: 70µs, 2ms
Memory Interface: SPI - Quad I/O, QPI, DTR
Access Time: 5.5 ns
Memory Organization: 128M x 8
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| IS25WP01GG-RMLE-TY |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: 1GB QPI/QSPI, 16-PIN SOP 300MIL,
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Write Cycle Time - Word, Page: 70µs, 2ms
Memory Interface: SPI - Quad I/O, QPI, DTR
Access Time: 5.5 ns
Memory Organization: 128M x 8
Description: 1GB QPI/QSPI, 16-PIN SOP 300MIL,
Packaging: Tray
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Memory Size: 1Gbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.65V ~ 1.95V
Technology: FLASH - NOR (SLC)
Clock Frequency: 133 MHz
Memory Format: FLASH
Supplier Device Package: 16-SOIC
Write Cycle Time - Word, Page: 70µs, 2ms
Memory Interface: SPI - Quad I/O, QPI, DTR
Access Time: 5.5 ns
Memory Organization: 128M x 8
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| IS21TF128G-JCLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC FLASH 1TBIT EMMC 153VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: eMMC_5.1
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1TBIT EMMC 153VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Memory Interface: eMMC_5.1
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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| IS21TF128G-JQLI-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC FLASH 1TBIT EMMC 100LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-LBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 100-LFBGA (14x18)
Memory Interface: eMMC_5.1
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Description: IC FLASH 1TBIT EMMC 100LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-LBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 100-LFBGA (14x18)
Memory Interface: eMMC_5.1
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
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| IS22TF128G-JCLA1-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC FLASH 1TBIT EMMC 153VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Grade: Automotive
Memory Interface: eMMC_5.1
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 1TBIT EMMC 153VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Grade: Automotive
Memory Interface: eMMC_5.1
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| IS22TF128G-JQLA1-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC FLASH 1TBIT EMMC 100LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-LBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 100-LFBGA (14x18)
Grade: Automotive
Memory Interface: eMMC_5.1
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 1TBIT EMMC 100LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 100-LBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 100-LFBGA (14x18)
Grade: Automotive
Memory Interface: eMMC_5.1
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| IS22TF128G-JCLA1 |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC FLASH 1TBIT EMMC 153VFBGA
Packaging: Bulk
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Grade: Automotive
Memory Interface: eMMC_5.1
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 1TBIT EMMC 153VFBGA
Packaging: Bulk
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Grade: Automotive
Memory Interface: eMMC_5.1
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| IS22TF128G-JCLA2-TR |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC FLASH 1TBIT EMMC 153VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Grade: Automotive
Memory Interface: eMMC_5.1
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 1TBIT EMMC 153VFBGA
Packaging: Tape & Reel (TR)
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Grade: Automotive
Memory Interface: eMMC_5.1
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| IS22TF128G-JQLA1 |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC FLASH 1TBIT EMMC 100LFBGA
Packaging: Bulk
Package / Case: 100-LBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 100-LFBGA (14x18)
Grade: Automotive
Memory Interface: eMMC_5.1
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 1TBIT EMMC 100LFBGA
Packaging: Bulk
Package / Case: 100-LBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 100-LFBGA (14x18)
Grade: Automotive
Memory Interface: eMMC_5.1
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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| IS22TF128G-JCLA2 |
|
Виробник: ISSI, Integrated Silicon Solution Inc
Description: IC FLASH 1TBIT EMMC 153VFBGA
Packaging: Bulk
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Grade: Automotive
Memory Interface: eMMC_5.1
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Description: IC FLASH 1TBIT EMMC 153VFBGA
Packaging: Bulk
Package / Case: 153-VFBGA
Mounting Type: Surface Mount
Memory Size: 1Tbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NAND (TLC)
Clock Frequency: 200 MHz
Memory Format: FLASH
Supplier Device Package: 153-VFBGA (11.5x13)
Grade: Automotive
Memory Interface: eMMC_5.1
Memory Organization: 128G x 8
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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