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IS66WV51216EBLL-70BLI-TR ISSI IS66WV51216EALL-70BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS66WV51216EBLL-70TLI-TR ISSI IS66WV51216EALL-70BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS64WV51216EDBLL-10BLA3 ISSI IS61WV51216EDBLL-10BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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IS64WV51216EDBLL-10BLA3-TR ISSI IS61WV51216EDBLL-10BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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IS61WV51216EDBLL-10BLI ISSI IS61WV51216EDBLL-10BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61WV51216EDBLL-10BLI-TR ISSI IS61WV51216EDBLL-10BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS64WV51216EDBLL-10CTLA3 ISSI IS61WV51216EDBLL-10BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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IS64WV51216EDBLL-10CTLA3-TR ISSI IS61WV51216EDBLL-10BLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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IS25LP256E-JLLA3 IS25LP256E-JLLA3 ISSI IS25LP256E-JLLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
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IS25LP256E-JLLA3-TR IS25LP256E-JLLA3-TR ISSI IS25LP256E-JLLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
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IS25LP256E-JLLE IS25LP256E-JLLE ISSI IS25LP256E-JLLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
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IS25LP256E-JLLE-TR IS25LP256E-JLLE-TR ISSI IS25LP256E-JLLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
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IS25LP256E-RHLA3 ISSI IS25LP256E-JLLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
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IS25LP256E-RHLA3-TR ISSI IS25LP256E-JLLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
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IS25LP256E-RHLE ISSI IS25LP256E-JLLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
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IS25LP256E-RHLE-TR ISSI IS25LP256E-JLLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
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IS25LP256E-RMLE ISSI IS25LP256E-JLLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
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IS25LP256E-RMLE-TR ISSI IS25LP256E-JLLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
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IS25WE256E-RHLA3 ISSI IS25WE256E-RHLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
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IS25WE256E-RHLA3-TR ISSI IS25WE256E-RHLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
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IS25WP256E-JLLE IS25WP256E-JLLE ISSI IS25LP256E-JLLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
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IS25WP256E-JLLE-TR IS25WP256E-JLLE-TR ISSI IS25LP256E-JLLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
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IS25WP256E-RHLA3-TR ISSI IS25LP256E-JLLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
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IS25WP256E-RHLE ISSI IS25LP256E-JLLA3.pdf Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
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IS61LPS12836A-250TQL ISSI IS61LPS12836A-200TQLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 2.6ns; QFP100; 0÷70°C
Mounting: SMD
Operating temperature: 0...70°C
Operating voltage: 3.3V
Memory organisation: 128kx36bit
Memory: 4.5Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Case: QFP100
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Access time: 2.6ns
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IS61LPD51236A-250B3LI ISSI IS61LPD51236A-200TQLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 2.6ns; PBGA165
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Memory organisation: 512kx36bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Case: PBGA165
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Access time: 2.6ns
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IS61LPS25618A-200TQLI ISSI IS61LPS12836A-200TQLI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
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IS61LPS25618EC-200TQLI ISSI IS61LPS12836EC-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
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IS61LPS25618EC-200TQLI-TR ISSI IS61LPS12836EC-200B3LI.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
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IS62WV2568BLL-55HLI IS62WV2568BLL-55HLI ISSI 62WV2568ALL_BLL.pdf Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; STSOP32
Case: STSOP32
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 2.5...3.6V
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
на замовлення 166 шт:
термін постачання 14-30 дні (днів)
3+172.12 грн
5+154.78 грн
25+137.95 грн
Мінімальне замовлення: 3
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IS66WV51216EBLL-70BLI-TR IS66WV51216EALL-70BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS66WV51216EBLL-70TLI-TR IS66WV51216EALL-70BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS64WV51216EDBLL-10BLA3 IS61WV51216EDBLL-10BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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IS64WV51216EDBLL-10BLA3-TR IS61WV51216EDBLL-10BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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IS61WV51216EDBLL-10BLI IS61WV51216EDBLL-10BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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IS61WV51216EDBLL-10BLI-TR IS61WV51216EDBLL-10BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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IS64WV51216EDBLL-10CTLA3 IS61WV51216EDBLL-10BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
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IS64WV51216EDBLL-10CTLA3-TR IS61WV51216EDBLL-10BLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
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IS25LP256E-JLLA3 IS25LP256E-JLLA3.pdf
IS25LP256E-JLLA3
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
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IS25LP256E-JLLA3-TR IS25LP256E-JLLA3.pdf
IS25LP256E-JLLA3-TR
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
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IS25LP256E-JLLE IS25LP256E-JLLA3.pdf
IS25LP256E-JLLE
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
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IS25LP256E-JLLE-TR IS25LP256E-JLLA3.pdf
IS25LP256E-JLLE-TR
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
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IS25LP256E-RHLA3 IS25LP256E-JLLA3.pdf
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
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IS25LP256E-RHLA3-TR IS25LP256E-JLLA3.pdf
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
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IS25LP256E-RHLE IS25LP256E-JLLA3.pdf
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
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IS25LP256E-RHLE-TR IS25LP256E-JLLA3.pdf
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
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IS25LP256E-RMLE IS25LP256E-JLLA3.pdf
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
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IS25LP256E-RMLE-TR IS25LP256E-JLLA3.pdf
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
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IS25WE256E-RHLA3 IS25WE256E-RHLA3.pdf
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
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IS25WE256E-RHLA3-TR IS25WE256E-RHLA3.pdf
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
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IS25WP256E-JLLE IS25LP256E-JLLA3.pdf
IS25WP256E-JLLE
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
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IS25WP256E-JLLE-TR IS25LP256E-JLLA3.pdf
IS25WP256E-JLLE-TR
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
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IS25WP256E-RHLA3-TR IS25LP256E-JLLA3.pdf
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
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IS25WP256E-RHLE IS25LP256E-JLLA3.pdf
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
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IS61LPS12836A-250TQL IS61LPS12836A-200TQLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 2.6ns; QFP100; 0÷70°C
Mounting: SMD
Operating temperature: 0...70°C
Operating voltage: 3.3V
Memory organisation: 128kx36bit
Memory: 4.5Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Case: QFP100
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Access time: 2.6ns
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IS61LPD51236A-250B3LI IS61LPD51236A-200TQLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 2.6ns; PBGA165
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Memory organisation: 512kx36bit
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Case: PBGA165
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Access time: 2.6ns
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IS61LPS25618A-200TQLI IS61LPS12836A-200TQLI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
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IS61LPS25618EC-200TQLI IS61LPS12836EC-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
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IS61LPS25618EC-200TQLI-TR IS61LPS12836EC-200B3LI.pdf
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
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IS62WV2568BLL-55HLI 62WV2568ALL_BLL.pdf
IS62WV2568BLL-55HLI
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 2.5÷3.6V; 55ns; STSOP32
Case: STSOP32
Mounting: SMD
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 55ns
Operating voltage: 2.5...3.6V
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
на замовлення 166 шт:
термін постачання 14-30 дні (днів)
Кількість Ціна
3+172.12 грн
5+154.78 грн
25+137.95 грн
Мінімальне замовлення: 3
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