| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IS61LV256AL-10JLI | ISSI |
 Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 3.3V Access time: 10ns Case: SOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62LV256AL-45ULI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel Type of integrated circuit: SRAM memory Kind of interface: parallel Mounting: SMD Case: SOP28 Operating temperature: -40...85°C Access time: 45ns Operating voltage: 3.3V Memory: 256kb SRAM Memory organisation: 32kx8bit Kind of memory: SRAM |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 |
IS61LV5128AL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 3.3V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 45 шт: термін постачання 14-30 дні (днів) |
|
||||||||
| IS61LV5128AL-10KLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; SOJ36; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 3.3V Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LV5128AL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 512kx8bit Operating voltage: 3.3V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61QDPB42M36A1-500M3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 |
IS61LPS204836B-166TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 3.3V Access time: 3.8ns Case: TQFP100 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IS61VPS204836B-250B3L | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 2.5V Access time: 2.8ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61VPS204836B-250B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 2.5V Access time: 2.8ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61VVPS204818B-166B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; 3.8ns; TFBGA165 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 2Mx18bit Operating voltage: 1.8V Access time: 3.8ns Case: TFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 |
IS61WV51216BLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 2.4...3.6V |
на замовлення 55 шт: термін постачання 14-30 дні (днів) |
|
||||||||
 |
IS61WV51216EDBLL-8TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 8ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 8ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 42 шт: термін постачання 14-30 дні (днів) |
|
||||||||
 |
IS62WV51216BLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Access time: 55ns Case: TSOP44 Kind of interface: parallel Mounting: SMD Operating voltage: 3.3V |
на замовлення 2527 шт: термін постачання 14-30 дні (днів) |
|
||||||||
| IS66WV51216EBLL-70TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 70ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS66WV51216EBLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV51216ALL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.65...2.2V Access time: 70ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV51216ALL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.65...2.2V Access time: 70ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS64WV51216BLL-10CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS64WV51216BLL-10CTLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS64WV51216BLL-10MLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS64WV51216BLL-10MLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61WV51216BLL-10MLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61WV51216BLL-10MLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV51216BLL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV51216BLL-55BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV51216EALL-55BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.65...2.2V Access time: 55ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS66WV51216EALL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 1.7...1.95V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV51216EBLL-45BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.2...3.6V Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV51216EBLL-45BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.2...3.6V Access time: 45ns Case: VFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS66WV51216EBLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS66WV51216EBLL-70BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS66WV51216EBLL-70BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 70ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS66WV51216EBLL-70TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: PSRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 70ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS64WV51216EDBLL-10BLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS64WV51216EDBLL-10BLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61WV51216EDBLL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61WV51216EDBLL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TFBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS64WV51216EDBLL-10CTLA3 | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS64WV51216EDBLL-10CTLA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
 |
IS25LP256E-JLLA3 | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Operating frequency: 166MHz Interface: DTR; QPI; SPI Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
IS25LP256E-JLLA3-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Operating frequency: 166MHz Interface: DTR; QPI; SPI Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
IS25LP256E-JLLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating frequency: 166MHz Interface: DTR; QPI; SPI Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
IS25LP256E-JLLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating frequency: 166MHz Interface: DTR; QPI; SPI Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IS25LP256E-RHLA3 | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Operating frequency: 166MHz Interface: DTR; QPI; SPI Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25LP256E-RHLA3-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Operating frequency: 166MHz Interface: DTR; QPI; SPI Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25LP256E-RHLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating frequency: 166MHz Interface: DTR; QPI; SPI Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25LP256E-RHLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating frequency: 166MHz Interface: DTR; QPI; SPI Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25LP256E-RMLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: SO16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating frequency: 166MHz Interface: DTR; QPI; SPI Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25LP256E-RMLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO16 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 2.3...3.6V Case: SO16 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating frequency: 166MHz Interface: DTR; QPI; SPI Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25WE256E-RHLA3 | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 1.7...1.95V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Operating frequency: 166MHz Interface: DTR; QPI; SPI Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25WE256E-RHLA3-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 1.7...1.95V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Operating frequency: 166MHz Interface: DTR; QPI; SPI Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
|
IS25WP256E-JLLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 1.65...1.95V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating frequency: 166MHz Interface: DTR; QPI; SPI Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
|
|
IS25WP256E-JLLE-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 1.65...1.95V Case: WSON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating frequency: 166MHz Interface: DTR; QPI; SPI Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IS25WP256E-RHLA3-TR | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 1.65...1.95V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...125°C Operating frequency: 166MHz Interface: DTR; QPI; SPI Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25WP256E-RHLE | ISSI |
Category: Serial FLASH memories - integrated circ. Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 256Mb FLASH Operating voltage: 1.65...1.95V Case: TFBGA24 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Operating frequency: 166MHz Interface: DTR; QPI; SPI Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LPS12836A-250TQL | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 2.6ns; QFP100; 0÷70°C Mounting: SMD Operating temperature: 0...70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: QFP100 Access time: 2.6ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LPD51236A-250B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 2.6ns; PBGA165 Memory: 18Mb SRAM Kind of package: in-tray; tube Kind of interface: parallel Case: PBGA165 Mounting: SMD Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 2.6ns Operating voltage: 3.3V Memory organisation: 512kx36bit |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LPS25618A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100 Mounting: SMD Case: QFP100 Operating voltage: 3.3V Memory organisation: 256kx18bit Memory: 4.5Mb SRAM Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LPS25618EC-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100 Mounting: SMD Case: QFP100 Operating voltage: 3.3V Memory organisation: 256kx18bit Memory: 4.5Mb SRAM Kind of package: in-tray; tube Kind of interface: parallel Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LPS25618EC-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ. Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100 Mounting: SMD Case: QFP100 Operating voltage: 3.3V Memory organisation: 256kx18bit Memory: 4.5Mb SRAM Kind of package: reel; tape Kind of interface: parallel Kind of memory: SRAM Type of integrated circuit: SRAM memory Operating temperature: -40...85°C Access time: 3.1ns |
товару немає в наявності |
В кошику од. на суму грн. |
| IS61LV256AL-10JLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| IS62LV256AL-45ULI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Mounting: SMD
Case: SOP28
Operating temperature: -40...85°C
Access time: 45ns
Operating voltage: 3.3V
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Kind of memory: SRAM
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 45ns; SOP28; parallel
Type of integrated circuit: SRAM memory
Kind of interface: parallel
Mounting: SMD
Case: SOP28
Operating temperature: -40...85°C
Access time: 45ns
Operating voltage: 3.3V
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Kind of memory: SRAM
товару немає в наявності
В кошику
од. на суму грн.
| IS61LV5128AL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 45 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 346.16 грн |
| IS61LV5128AL-10KLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| IS61LV5128AL-10TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 512kx8bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 512kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| IS61QDPB42M36A1-500M3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61LPS204836B-166TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 3.3V
Access time: 3.8ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 3.3V; 3.8ns; TQFP100; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 3.3V
Access time: 3.8ns
Case: TQFP100
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61VPS204836B-250B3L |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61VPS204836B-250B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 2.5V; 2.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 2.5V
Access time: 2.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61VVPS204818B-166B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; 3.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 1.8V
Access time: 3.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; 3.8ns; TFBGA165
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 1.8V
Access time: 3.8ns
Case: TFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61WV51216BLL-10TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 2.4...3.6V
на замовлення 55 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1536.08 грн |
| 3+ | 1352.70 грн |
| 10+ | 1252.25 грн |
| 25+ | 1119.99 грн |
| IS61WV51216EDBLL-8TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 8ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 8ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 8ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 8ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 42 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 974.47 грн |
| IS62WV51216BLL-55TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 3.3V; 55ns; TSOP44; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Access time: 55ns
Case: TSOP44
Kind of interface: parallel
Mounting: SMD
Operating voltage: 3.3V
на замовлення 2527 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 592.25 грн |
| 3+ | 538.23 грн |
| 10+ | 519.82 грн |
| 25+ | 493.03 грн |
| IS66WV51216EBLL-70TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS66WV51216EBLL-55TLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS62WV51216ALL-70BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS62WV51216ALL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 70ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 70ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS64WV51216BLL-10CTLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS64WV51216BLL-10CTLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS64WV51216BLL-10MLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS64WV51216BLL-10MLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS61WV51216BLL-10MLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61WV51216BLL-10MLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS62WV51216BLL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS62WV51216BLL-55BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS62WV51216EALL-55BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.65÷2.2V; 55ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.65...2.2V
Access time: 55ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS66WV51216EALL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 1.7÷1.95V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 1.7...1.95V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS62WV51216EBLL-45BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS62WV51216EBLL-45BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.2÷3.6V; 45ns; VFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.2...3.6V
Access time: 45ns
Case: VFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS66WV51216EBLL-55TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS66WV51216EBLL-70BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS66WV51216EBLL-70BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS66WV51216EBLL-70TLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 70ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: PSRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 70ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS64WV51216EDBLL-10BLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS64WV51216EDBLL-10BLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS61WV51216EDBLL-10BLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61WV51216EDBLL-10BLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TFBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TFBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS64WV51216EDBLL-10CTLA3 |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS64WV51216EDBLL-10CTLA3-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.4÷3.6V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP256E-JLLA3 |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP256E-JLLA3-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP256E-JLLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP256E-JLLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; WSON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP256E-RHLA3 |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP256E-RHLA3-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP256E-RHLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP256E-RHLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP256E-RMLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS25LP256E-RMLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 2.3÷3.6V; SO16
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 2.3...3.6V
Case: SO16
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS25WE256E-RHLA3 |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS25WE256E-RHLA3-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.7÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.7...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS25WP256E-JLLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS25WP256E-JLLE-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: WSON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS25WP256E-RHLA3-TR |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...125°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: reel; tape
товару немає в наявності
В кошику
од. на суму грн.
| IS25WP256E-RHLE |
|
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 256MbFLASH; DTR,QPI,SPI; 166MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 256Mb FLASH
Operating voltage: 1.65...1.95V
Case: TFBGA24
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Operating frequency: 166MHz
Interface: DTR; QPI; SPI
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61LPS12836A-250TQL |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 2.6ns; QFP100; 0÷70°C
Mounting: SMD
Operating temperature: 0...70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Access time: 2.6ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 2.6ns; QFP100; 0÷70°C
Mounting: SMD
Operating temperature: 0...70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Access time: 2.6ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61LPD51236A-250B3LI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 2.6ns; PBGA165
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Case: PBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 2.6ns
Operating voltage: 3.3V
Memory organisation: 512kx36bit
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 18MbSRAM; 512kx36bit; 3.3V; 2.6ns; PBGA165
Memory: 18Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Case: PBGA165
Mounting: SMD
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 2.6ns
Operating voltage: 3.3V
Memory organisation: 512kx36bit
товару немає в наявності
В кошику
од. на суму грн.
| IS61LPS25618A-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
товару немає в наявності
В кошику
од. на суму грн.
| IS61LPS25618EC-200TQLI |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Kind of package: in-tray; tube
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
товару немає в наявності
В кошику
од. на суму грн.
| IS61LPS25618EC-200TQLI-TR |
|
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 256kx18bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Case: QFP100
Operating voltage: 3.3V
Memory organisation: 256kx18bit
Memory: 4.5Mb SRAM
Kind of package: reel; tape
Kind of interface: parallel
Kind of memory: SRAM
Type of integrated circuit: SRAM memory
Operating temperature: -40...85°C
Access time: 3.1ns
товару немає в наявності
В кошику
од. на суму грн.