| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| IS61WV102416EDBLL-10T2LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 16Mb SRAM Memory organisation: 1Mx16bit Operating voltage: 2.4...3.6V Access time: 10ns Case: TSOP48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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IS62C1024AL-35QLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 35ns; SOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Access time: 35ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating voltage: 4.5...5.5V |
на замовлення 15 шт: термін постачання 14-30 дні (днів) |
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IS61LV256AL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; TSOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Access time: 10ns Case: TSOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Operating voltage: 3.3V |
на замовлення 236 шт: термін постачання 14-30 дні (днів) |
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IS62WV1288BLL-55HLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
на замовлення 176 шт: термін постачання 14-30 дні (днів) |
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IS61WV6416DBLL-10TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Operating voltage: 2.4...3.6V Case: TSOP44 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 10ns |
на замовлення 120 шт: термін постачання 14-30 дні (днів) |
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IS62C1024AL-35TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 5V Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 35ns |
на замовлення 8 шт: термін постачання 14-30 дні (днів) |
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IS61C6416AL-12TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; TSOP44 II; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Operating voltage: 5V Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 12ns |
на замовлення 102 шт: термін постачання 14-30 дні (днів) |
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IS62WV6416BLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 64kx16bit Operating voltage: 2.5...3.6V Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 55ns |
на замовлення 110 шт: термін постачання 14-30 дні (днів) |
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IS65WV1288BLL-55HLA1 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; STSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 2.5...3.6V Case: STSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 55ns |
на замовлення 92 шт: термін постачання 14-30 дні (днів) |
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IS63LV1024L-10KLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 10ns; SOJ32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 3.3V Case: SOJ32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 10ns |
на замовлення 3 шт: термін постачання 14-30 дні (днів) |
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| IS63WV1024BLL-12TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 12ns; TSOP32 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 3.3V Case: TSOP32 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Access time: 12ns |
на замовлення 93 шт: термін постачання 14-30 дні (днів) |
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| IS62WV51216BLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 8Mb SRAM Memory organisation: 512kx16bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61DDB22M18C-250M3L | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 36Mb SRAM Memory organisation: 2Mx18bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61QDB22M36A-333B4LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 72Mb SRAM Memory organisation: 2Mx36bit Operating voltage: 1.8V Case: LFBGA165 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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IS34ML04G084-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 4Gb FLASH Operating voltage: 2.7...3.6V Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Interface: parallel 8bit Case: TSOP48 |
на замовлення 154 шт: термін постачання 14-30 дні (днів) |
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IS34MW02G084-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 2Gb FLASH Operating voltage: 1.7...1.95V Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Interface: parallel 8bit Case: TSOP48 |
на замовлення 68 шт: термін постачання 14-30 дні (днів) |
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| IS64LF12836A-7.5B3LA3-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165 Mounting: SMD Operating temperature: -40...125°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: TFBGA165 Access time: 7.5ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LF12836A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100 Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: QFP100 Access time: 7.5ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LF12836A-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100 Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: QFP100 Access time: 7.5ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LF12836EC-6.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100 Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: QFP100 Access time: 6.5ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS64LF12836EC-7.5B3LA3 | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165 Mounting: SMD Operating temperature: -40...125°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: TFBGA165 Access time: 7.5ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LF12836EC-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100 Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: QFP100 Access time: 7.5ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LPS12836A-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100 Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: QFP100 Access time: 3.1ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LPS12836A-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100 Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: QFP100 Access time: 3.1ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LPS12836EC-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165 Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: TFBGA165 Access time: 3.1ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LPS12836EC-200B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165 Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: TFBGA165 Access time: 3.1ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LPS12836EC-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100 Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: QFP100 Access time: 3.1ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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IS61NLF12836A-7.5TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100 Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: TQFP100 Access time: 7.5ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IS61NLF12836A-7.5TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100 Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: TQFP100 Access time: 7.5ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IS61NLP12836B-200TQLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100 Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: TQFP100 Access time: 3.1ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
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IS61NLP12836B-200TQLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100 Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: TQFP100 Access time: 3.1ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IS61NLP12836EC-200B3LI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165 Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: TFBGA165 Access time: 3.1ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61NLP12836EC-200B3LI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165 Mounting: SMD Operating temperature: -40...85°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Kind of interface: parallel Case: TFBGA165 Access time: 3.1ns Operating voltage: 3.3V Memory: 4.5Mb SRAM Memory organisation: 128kx36bit Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25LP016D-JULE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25LP080D-JULE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25WP016D-JULE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 1.65...1.95V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS25WP080D-JULE-TR | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 8Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 1.65...1.95V Case: USON8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43LD32160A-25BLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube Kind of memory: LPDDR2; SDRAM Kind of interface: parallel Case: TFBGA134 Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Clock frequency: 400MHz Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43LD32160A-25BLI-TR | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134 Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape Kind of memory: LPDDR2; SDRAM Kind of interface: parallel Case: TFBGA134 Access time: 18ns Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC Clock frequency: 400MHz Memory: 512Mb DRAM Memory organisation: 4Mx32bitx4 Type of integrated circuit: DRAM memory |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
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IS25WQ040-JNLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 4MbFLASH; SPI; 104MHz; 1.65÷1.95V; SOP8; serial Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 4Mb FLASH Interface: SPI Kind of interface: serial Mounting: SMD Operating frequency: 104MHz Case: SOP8 Operating temperature: -40...105°C Operating voltage: 1.65...1.95V |
на замовлення 37 шт: термін постачання 14-30 дні (днів) |
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| IS61LV25616AL-10TL | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 3.3V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LV2568L-10KLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; SOJ36; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 3.3V Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LV25616AL-10BLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 3.3V Access time: 10ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: in-tray; tube |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LV2568L-10KLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 10ns; SOJ36; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 2Mb SRAM Memory organisation: 256kx8bit Operating voltage: 3.3V Access time: 10ns Case: SOJ36 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LV25616AL-10BLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 3.3V Access time: 10ns Case: miniBGA48 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LV25616AL-10TL-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 3.3V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: 0...70°C Kind of package: reel; tape |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LV256AL-10JLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 10ns; SOJ28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 5V Access time: 10ns Case: SOJ28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LV256AL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; TSOP28; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 256kb SRAM Memory organisation: 32kx8bit Operating voltage: 3.3V Access time: 10ns Case: TSOP28 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS61LV25616AL-10TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 4Mb SRAM Memory organisation: 256kx16bit Operating voltage: 3.3V Access time: 10ns Case: TSOP44 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43QR16512A-083TBL | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C Memory: 8Gb DRAM Supply voltage: 1.2V DC Kind of memory: DDR4; SDRAM Kind of package: in-tray; tube Type of integrated circuit: DRAM memory Case: TWBGA96 Memory organisation: 512Mx16bit Kind of interface: parallel Mounting: SMD Operating temperature: 0...95°C Access time: 14.16ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS43QR16512A-083TBLI | ISSI |
Category: DRAM memories - integrated circuitsDescription: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; -40÷95°C Memory: 8Gb DRAM Supply voltage: 1.2V DC Kind of memory: DDR4; SDRAM Kind of package: in-tray; tube Type of integrated circuit: DRAM memory Case: TWBGA96 Memory organisation: 512Mx16bit Kind of interface: parallel Mounting: SMD Operating temperature: -40...95°C Access time: 14.16ns |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS34MW01G164-BLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 1Gb FLASH Operating voltage: 1.7...1.95V Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Interface: parallel 8bit Case: VFBGA63 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
IS34ML02G084-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 2Gb FLASH Operating voltage: 2.7...3.6V Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Interface: parallel 8bit Case: TSOP48 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IS34ML04G081-TLI | ISSI |
Category: Parallel FLASH memories - integ. circ.Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel Type of integrated circuit: FLASH memory Kind of memory: NAND Memory: 4Gb FLASH Operating voltage: 2.7...3.6V Mounting: SMD Operating temperature: -40...85°C Kind of interface: parallel Interface: parallel 8bit Case: TSOP48 |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
IS62WV1288BLL-55TLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 55ns; TSOP32; parallel Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 3.3V Access time: 55ns Case: TSOP32 Kind of interface: parallel Mounting: SMD |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||
| IS62WV1288BLL-55QLI | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; SOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: SOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV1288BLL-55QLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32 II Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP32 II Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
| IS62WV1288BLL-55TLI-TR | ISSI |
Category: Parallel SRAM memories - integ. circ.Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32 Type of integrated circuit: SRAM memory Kind of memory: SRAM Memory: 1Mb SRAM Memory organisation: 128kx8bit Operating voltage: 2.5...3.6V Access time: 55ns Case: TSOP32 Kind of interface: parallel Mounting: SMD Operating temperature: -40...85°C |
товару немає в наявності |
В кошику од. на суму грн. | |||||||||
|
IS25LP016D-JBLE | ISSI |
Category: Serial FLASH memories - integrated circ.Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8 Type of integrated circuit: FLASH memory Kind of memory: NOR Memory: 16Mb FLASH Interface: DTR; QPI; SPI Operating frequency: 133MHz Operating voltage: 2.3...3.6V Case: SO8 Kind of interface: serial Mounting: SMD Operating temperature: -40...105°C |
на замовлення 103 шт: термін постачання 14-30 дні (днів) |
|
| IS61WV102416EDBLL-10T2LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 16MbSRAM; 1Mx16bit; 2.4÷3.6V; 10ns; TSOP48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 16Mb SRAM
Memory organisation: 1Mx16bit
Operating voltage: 2.4...3.6V
Access time: 10ns
Case: TSOP48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS62C1024AL-35QLI | ![]() |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 35ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 35ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating voltage: 4.5...5.5V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 4.5÷5.5V; 35ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Access time: 35ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating voltage: 4.5...5.5V
на замовлення 15 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 342.42 грн |
| 3+ | 295.25 грн |
| 10+ | 264.97 грн |
| IS61LV256AL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Access time: 10ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Operating voltage: 3.3V
на замовлення 236 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 5+ | 102.36 грн |
| 25+ | 88.32 грн |
| 50+ | 86.64 грн |
| IS62WV1288BLL-55HLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
на замовлення 176 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 4+ | 138.60 грн |
| IS61WV6416DBLL-10TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 2.4...3.6V
Case: TSOP44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.4÷3.6V; 10ns; TSOP44
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 2.4...3.6V
Case: TSOP44
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 10ns
на замовлення 120 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 164.87 грн |
| IS62C1024AL-35TLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 5V; 35ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 5V
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 35ns
на замовлення 8 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 177.55 грн |
| IS61C6416AL-12TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 5V
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 12ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 5V; 12ns; TSOP44 II; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 5V
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 12ns
на замовлення 102 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 186.61 грн |
| IS62WV6416BLL-55TLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 2.5...3.6V
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 64kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 64kx16bit
Operating voltage: 2.5...3.6V
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 55ns
на замовлення 110 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 217.41 грн |
| 5+ | 187.58 грн |
| 25+ | 173.28 грн |
| IS65WV1288BLL-55HLA1 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 55ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; STSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Case: STSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 55ns
на замовлення 92 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 299.85 грн |
| 5+ | 259.08 грн |
| 25+ | 218.71 грн |
| IS63LV1024L-10KLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 10ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 3.3V
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 10ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 10ns; SOJ32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 3.3V
Case: SOJ32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 10ns
на замовлення 3 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 182.99 грн |
| IS63WV1024BLL-12TLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 12ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 3.3V
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 12ns
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 12ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 3.3V
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Access time: 12ns
на замовлення 93 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 3+ | 165.78 грн |
| 25+ | 137.95 грн |
| IS62WV51216BLL-55TLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 8MbSRAM; 512kx16bit; 2.5÷3.6V; 55ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 8Mb SRAM
Memory organisation: 512kx16bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
товару немає в наявності
В кошику
од. на суму грн.
| IS61DDB22M18C-250M3L |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 36MbSRAM; 2Mx18bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 36Mb SRAM
Memory organisation: 2Mx18bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS61QDB22M36A-333B4LI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 72MbSRAM; 2Mx36bit; 1.8V; LFBGA165; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 72Mb SRAM
Memory organisation: 2Mx36bit
Operating voltage: 1.8V
Case: LFBGA165
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
товару немає в наявності
В кошику
од. на суму грн.
| IS34ML04G084-TLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 4Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Interface: parallel 8bit
Case: TSOP48
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 4Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Interface: parallel 8bit
Case: TSOP48
на замовлення 154 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1058.07 грн |
| 5+ | 874.82 грн |
| 25+ | 807.53 грн |
| 96+ | 751.17 грн |
| IS34MW02G084-TLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 2Gb FLASH
Operating voltage: 1.7...1.95V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Interface: parallel 8bit
Case: TSOP48
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 2Gb FLASH
Operating voltage: 1.7...1.95V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Interface: parallel 8bit
Case: TSOP48
на замовлення 68 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 327.93 грн |
| IS64LF12836A-7.5B3LA3-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TFBGA165
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TFBGA165
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
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| IS61LF12836A-7.5TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
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| IS61LF12836A-7.5TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
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| IS61LF12836EC-6.5TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Access time: 6.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 6.5ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Access time: 6.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
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| IS64LF12836EC-7.5B3LA3 |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TFBGA165
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TFBGA165
Mounting: SMD
Operating temperature: -40...125°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TFBGA165
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
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| IS61LF12836EC-7.5TQLI-TR |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
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| IS61LPS12836A-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
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| IS61LPS12836A-200TQLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
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| IS61LPS12836EC-200B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TFBGA165
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TFBGA165
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
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| IS61LPS12836EC-200B3LI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TFBGA165
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TFBGA165
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
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| IS61LPS12836EC-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; QFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: QFP100
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
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| IS61NLF12836A-7.5TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TQFP100
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TQFP100
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
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| IS61NLF12836A-7.5TQLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TQFP100
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 7.5ns; TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TQFP100
Access time: 7.5ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
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| IS61NLP12836B-200TQLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TQFP100
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TQFP100
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
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| IS61NLP12836B-200TQLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TQFP100
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TQFP100
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TQFP100
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
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| IS61NLP12836EC-200B3LI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TFBGA165
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TFBGA165
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: in-tray; tube
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| IS61NLP12836EC-200B3LI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TFBGA165
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4.5MbSRAM; 128kx36bit; 3.3V; 3.1ns; TFBGA165
Mounting: SMD
Operating temperature: -40...85°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Kind of interface: parallel
Case: TFBGA165
Access time: 3.1ns
Operating voltage: 3.3V
Memory: 4.5Mb SRAM
Memory organisation: 128kx36bit
Kind of package: reel; tape
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| IS25LP016D-JULE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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| IS25LP080D-JULE-TR |
![]() |
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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| IS25WP016D-JULE-TR |
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Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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| IS25WP080D-JULE-TR |
![]() |
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 8MbFLASH; DTR,QPI,SPI; 133MHz; 1.65÷1.95V; USON8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 8Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 1.65...1.95V
Case: USON8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Kind of package: reel; tape
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| IS43LD32160A-25BLI |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of memory: LPDDR2; SDRAM
Kind of interface: parallel
Case: TFBGA134
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Kind of memory: LPDDR2; SDRAM
Kind of interface: parallel
Case: TFBGA134
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Type of integrated circuit: DRAM memory
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| IS43LD32160A-25BLI-TR |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: LPDDR2; SDRAM
Kind of interface: parallel
Case: TFBGA134
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Type of integrated circuit: DRAM memory
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 512MbDRAM; 4Mx32bitx4; 400MHz; 18ns; TFBGA134
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of memory: LPDDR2; SDRAM
Kind of interface: parallel
Case: TFBGA134
Access time: 18ns
Supply voltage: 1.14...1.3V DC; 1.7...1.95V DC
Clock frequency: 400MHz
Memory: 512Mb DRAM
Memory organisation: 4Mx32bitx4
Type of integrated circuit: DRAM memory
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| IS25WQ040-JNLE |
![]() |
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 4MbFLASH; SPI; 104MHz; 1.65÷1.95V; SOP8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 4Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating frequency: 104MHz
Case: SOP8
Operating temperature: -40...105°C
Operating voltage: 1.65...1.95V
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 4MbFLASH; SPI; 104MHz; 1.65÷1.95V; SOP8; serial
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 4Mb FLASH
Interface: SPI
Kind of interface: serial
Mounting: SMD
Operating frequency: 104MHz
Case: SOP8
Operating temperature: -40...105°C
Operating voltage: 1.65...1.95V
на замовлення 37 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 11+ | 41.05 грн |
| 25+ | 40.88 грн |
| IS61LV25616AL-10TL | ![]() |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: in-tray; tube
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| IS61LV2568L-10KLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS61LV25616AL-10BLI |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: in-tray; tube
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| IS61LV2568L-10KLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 2MbSRAM; 256kx8bit; 3.3V; 10ns; SOJ36; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 2Mb SRAM
Memory organisation: 256kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: SOJ36
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS61LV25616AL-10BLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; miniBGA48
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: miniBGA48
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Kind of package: reel; tape
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| IS61LV25616AL-10TL-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II; 0÷70°C
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...70°C
Kind of package: reel; tape
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| IS61LV256AL-10JLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 5V; 10ns; SOJ28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 5V
Access time: 10ns
Case: SOJ28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS61LV256AL-10TLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 256kbSRAM; 32kx8bit; 3.3V; 10ns; TSOP28; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 256kb SRAM
Memory organisation: 32kx8bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP28
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS61LV25616AL-10TLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 4MbSRAM; 256kx16bit; 3.3V; 10ns; TSOP44 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 4Mb SRAM
Memory organisation: 256kx16bit
Operating voltage: 3.3V
Access time: 10ns
Case: TSOP44 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS43QR16512A-083TBL |
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Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C
Memory: 8Gb DRAM
Supply voltage: 1.2V DC
Kind of memory: DDR4; SDRAM
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Case: TWBGA96
Memory organisation: 512Mx16bit
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...95°C
Access time: 14.16ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; 0÷95°C
Memory: 8Gb DRAM
Supply voltage: 1.2V DC
Kind of memory: DDR4; SDRAM
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Case: TWBGA96
Memory organisation: 512Mx16bit
Kind of interface: parallel
Mounting: SMD
Operating temperature: 0...95°C
Access time: 14.16ns
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| IS43QR16512A-083TBLI |
![]() |
Виробник: ISSI
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; -40÷95°C
Memory: 8Gb DRAM
Supply voltage: 1.2V DC
Kind of memory: DDR4; SDRAM
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Case: TWBGA96
Memory organisation: 512Mx16bit
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...95°C
Access time: 14.16ns
Category: DRAM memories - integrated circuits
Description: IC: DRAM memory; 8GbDRAM; 512Mx16bit; 14.16ns; TWBGA96; -40÷95°C
Memory: 8Gb DRAM
Supply voltage: 1.2V DC
Kind of memory: DDR4; SDRAM
Kind of package: in-tray; tube
Type of integrated circuit: DRAM memory
Case: TWBGA96
Memory organisation: 512Mx16bit
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...95°C
Access time: 14.16ns
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| IS34MW01G164-BLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Operating voltage: 1.7...1.95V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Interface: parallel 8bit
Case: VFBGA63
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 1GbFLASH; parallel 8bit; VFBGA63; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 1Gb FLASH
Operating voltage: 1.7...1.95V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Interface: parallel 8bit
Case: VFBGA63
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| IS34ML02G084-TLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Interface: parallel 8bit
Case: TSOP48
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 2GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 2Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Interface: parallel 8bit
Case: TSOP48
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| IS34ML04G081-TLI |
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Виробник: ISSI
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 4Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Interface: parallel 8bit
Case: TSOP48
Category: Parallel FLASH memories - integ. circ.
Description: IC: FLASH memory; 4GbFLASH; parallel 8bit; TSOP48; parallel
Type of integrated circuit: FLASH memory
Kind of memory: NAND
Memory: 4Gb FLASH
Operating voltage: 2.7...3.6V
Mounting: SMD
Operating temperature: -40...85°C
Kind of interface: parallel
Interface: parallel 8bit
Case: TSOP48
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| IS62WV1288BLL-55TLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 55ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 3.3V
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 3.3V; 55ns; TSOP32; parallel
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 3.3V
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
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| IS62WV1288BLL-55QLI |
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Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; SOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: SOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS62WV1288BLL-55QLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32 II
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32 II
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS62WV1288BLL-55TLI-TR |
![]() |
Виробник: ISSI
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
Category: Parallel SRAM memories - integ. circ.
Description: IC: SRAM memory; 1MbSRAM; 128kx8bit; 2.5÷3.6V; 55ns; TSOP32
Type of integrated circuit: SRAM memory
Kind of memory: SRAM
Memory: 1Mb SRAM
Memory organisation: 128kx8bit
Operating voltage: 2.5...3.6V
Access time: 55ns
Case: TSOP32
Kind of interface: parallel
Mounting: SMD
Operating temperature: -40...85°C
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| IS25LP016D-JBLE |
![]() |
Виробник: ISSI
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
Category: Serial FLASH memories - integrated circ.
Description: IC: FLASH memory; 16MbFLASH; DTR,QPI,SPI; 133MHz; 2.3÷3.6V; SO8
Type of integrated circuit: FLASH memory
Kind of memory: NOR
Memory: 16Mb FLASH
Interface: DTR; QPI; SPI
Operating frequency: 133MHz
Operating voltage: 2.3...3.6V
Case: SO8
Kind of interface: serial
Mounting: SMD
Operating temperature: -40...105°C
на замовлення 103 шт:
термін постачання 14-30 дні (днів)| Кількість | Ціна |
|---|---|
| 7+ | 67.94 грн |

















