Продукція > LITTELFUSE INC. > Всі товари виробника LITTELFUSE INC. (58697) > Сторінка 290 з 979
| Фото | Назва | Виробник | Інформація |
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IXTH3N100P | Littelfuse Inc. |
Description: MOSFET N-CH 1000V 3A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTP08N100P | Littelfuse Inc. |
Description: MOSFET N-CH 1000V 800MA TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
на замовлення 242 шт: термін постачання 21-31 дні (днів) |
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IXTP1R4N120P | Littelfuse Inc. |
Description: MOSFET N-CH 1200V 1.4A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V |
на замовлення 601 шт: термін постачання 21-31 дні (днів) |
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IXTP2N100P | Littelfuse Inc. |
Description: MOSFET N-CH 1000V 2A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V |
на замовлення 30 шт: термін постачання 21-31 дні (днів) |
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IXTP90N15T | Littelfuse Inc. |
Description: MOSFET N-CH 150V 90A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V Power Dissipation (Max): 455W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V |
на замовлення 25 шт: термін постачання 21-31 дні (днів) |
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IXTY08N100P | Littelfuse Inc. |
Description: MOSFET N-CH 1000V 800MA TO252Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V Power Dissipation (Max): 42W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V |
на замовлення 630 шт: термін постачання 21-31 дні (днів) |
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IXTY2N100P | Littelfuse Inc. |
Description: MOSFET N-CH 1000V 2A TO252Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Tc) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 86W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 100µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V |
на замовлення 1341 шт: термін постачання 21-31 дні (днів) |
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IXTA100N04T2 | Littelfuse Inc. |
Description: MOSFET N-CH 40V 100A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTA102N15T | Littelfuse Inc. |
Description: MOSFET N-CH 150V 102A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 102A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V Power Dissipation (Max): 455W (Tc) Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 25 V |
на замовлення 806 шт: термін постачання 21-31 дні (днів) |
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IXTA110N055T2 | Littelfuse Inc. |
Description: MOSFET N-CH 55V 110A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTA32P05T | Littelfuse Inc. |
Description: MOSFET P-CH 50V 32A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V |
на замовлення 675 шт: термін постачання 21-31 дні (днів) |
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IXTA44P15T | Littelfuse Inc. |
Description: MOSFET P-CH 150V 44A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V |
на замовлення 1601 шт: термін постачання 21-31 дні (днів) |
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IXTA52P10P | Littelfuse Inc. |
Description: MOSFET P-CH 100V 52A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 52A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V |
на замовлення 1203 шт: термін постачання 21-31 дні (днів) |
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IXTA90N055T2 | Littelfuse Inc. |
Description: MOSFET N-CH 55V 90A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTH10P50P | Littelfuse Inc. |
Description: MOSFET P-CH 500V 10A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 (IXTH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V |
на замовлення 217 шт: термін постачання 21-31 дні (днів) |
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IXTH110N25T | Littelfuse Inc. |
Description: MOSFET N-CH 250V 110A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V |
на замовлення 71 шт: термін постачання 21-31 дні (днів) |
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IXTH16P60P | Littelfuse Inc. |
Description: MOSFET P-CH 600V 16A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V |
на замовлення 266 шт: термін постачання 21-31 дні (днів) |
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IXTH20P50P | Littelfuse Inc. |
Description: MOSFET P-CH 500V 20A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 450mOhm @ 10A, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V |
на замовлення 1326 шт: термін постачання 21-31 дні (днів) |
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IXTH44P15T | Littelfuse Inc. |
Description: MOSFET P-CH 150V 44A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V |
на замовлення 275 шт: термін постачання 21-31 дні (днів) |
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IXTH76P10T | Littelfuse Inc. |
Description: MOSFET P-CH 100V 76A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V |
на замовлення 3054 шт: термін постачання 21-31 дні (днів) |
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IXTH90P10P | Littelfuse Inc. |
Description: MOSFET P-CH 100V 90A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 10V Power Dissipation (Max): 462W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V |
на замовлення 527 шт: термін постачання 21-31 дні (днів) |
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IXTK170P10P | Littelfuse Inc. |
Description: MOSFET P-CH 100V 170A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-264 (IXTK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V |
на замовлення 1054 шт: термін постачання 21-31 дні (днів) |
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IXTK32P60P | Littelfuse Inc. |
Description: MOSFET P-CH 600V 32A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-264 (IXTK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V |
на замовлення 170 шт: термін постачання 21-31 дні (днів) |
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IXTK40P50P | Littelfuse Inc. |
Description: MOSFET P-CH 500V 40A TO264Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-264 (IXTK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V |
на замовлення 1381 шт: термін постачання 21-31 дні (днів) |
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IXTN170P10P | Littelfuse Inc. |
Description: MOSFET P-CH 100V 170A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V |
на замовлення 286 шт: термін постачання 21-31 дні (днів) |
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IXTN40P50P | Littelfuse Inc. |
Description: MOSFET P-CH 500V 40A SOT227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 500mA, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V |
на замовлення 67 шт: термін постачання 21-31 дні (днів) |
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IXTP100N04T2 | Littelfuse Inc. |
Description: MOSFET N-CH 40V 100A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V |
на замовлення 269 шт: термін постачання 21-31 дні (днів) |
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IXTP170N075T2 | Littelfuse Inc. |
Description: MOSFET N-CH 75V 170A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170A (Tc) Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 25 V |
на замовлення 326 шт: термін постачання 21-31 дні (днів) |
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IXTP18P10T | Littelfuse Inc. |
Description: MOSFET P-CH 100V 18A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V |
на замовлення 3095 шт: термін постачання 21-31 дні (днів) |
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IXTP28P065T | Littelfuse Inc. |
Description: MOSFET P-CH 65V 28A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 65 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTP44P15T | Littelfuse Inc. |
Description: MOSFET P-CH 150V 44A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V |
на замовлення 518 шт: термін постачання 21-31 дні (днів) |
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IXTP70N075T2 | Littelfuse Inc. |
Description: MOSFET N-CH 75V 70A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTP76P10T | Littelfuse Inc. |
Description: MOSFET P-CH 100V 76A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V |
на замовлення 8263 шт: термін постачання 21-31 дні (днів) |
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IXTP90N075T2 | Littelfuse Inc. |
Description: MOSFET N-CH 75V 90A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTQ10P50P | Littelfuse Inc. |
Description: MOSFET P-CH 500V 10A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTQ44P15T | Littelfuse Inc. |
Description: MOSFET P-CH 150V 44A TO3PPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V Power Dissipation (Max): 298W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-3P Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V |
на замовлення 300 шт: термін постачання 21-31 дні (днів) |
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IXTR170P10P | Littelfuse Inc. |
Description: MOSFET P-CH 100V 108A ISOPLUS247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 108A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V Power Dissipation (Max): 312W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V |
на замовлення 1189 шт: термін постачання 21-31 дні (днів) |
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IXTR20P50P | Littelfuse Inc. |
Description: MOSFET P-CH 500V 13A ISOPLUS247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Tc) Rds On (Max) @ Id, Vgs: 490mOhm @ 10A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: ISOPLUS247™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTR32P60P | Littelfuse Inc. |
Description: MOSFET P-CH 600V 18A ISOPLUS247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 385mOhm @ 16A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: ISOPLUS247™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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IXTT16P60P | Littelfuse Inc. |
Description: MOSFET P-CH 600V 16A TO268Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V |
на замовлення 365 шт: термін постачання 21-31 дні (днів) |
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IXTT90P10P | Littelfuse Inc. |
Description: MOSFET P-CH 100V 90A TO268Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 10V Power Dissipation (Max): 462W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-268AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V |
на замовлення 212 шт: термін постачання 21-31 дні (днів) |
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IXTX32P60P | Littelfuse Inc. |
Description: MOSFET P-CH 600V 32A PLUS247-3Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Tc) Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V |
на замовлення 431 шт: термін постачання 21-31 дні (днів) |
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IXTX40P50P | Littelfuse Inc. |
Description: MOSFET P-CH 500V 40A PLUS247-3Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V Power Dissipation (Max): 890W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: PLUS247™-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V |
на замовлення 1159 шт: термін постачання 21-31 дні (днів) |
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Q4006N4RP | Littelfuse Inc. |
Description: TRIAC 400V 6A TO263 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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30300500001 | Littelfuse Inc. |
Description: FUSE BOARD MNT 50MA 125VAC 63VDC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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30300500131 | Littelfuse Inc. |
Description: FUSE BOARD MNT 50MA 125VAC 63VDC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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30300630001 | Littelfuse Inc. |
Description: FUSE BOARD MNT 63MA 125VAC 63VDC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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30300630131 | Littelfuse Inc. |
Description: FUSE BRD MNT 63MA 125VAC 63VDCPackaging: Bulk Package / Case: Radial, Can, Vertical Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm) Fuse Type: Board Mount (Cartridge Style Excluded) Mounting Type: Through Hole Operating Temperature: -25°C ~ 70°C Response Time: Fast Blow Approval Agency: CSA, UL Breaking Capacity @ Rated Voltage: 50A Current Rating (Amps): 63 mA Voltage Rating - AC: 125 V Voltage Rating - DC: 63 V Melting I²t: 1.3E-4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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30300800001 | Littelfuse Inc. |
Description: FUSE BRD MNT 80MA 125VAC 63VDCPackaging: Tape & Box (TB) Package / Case: Radial, Can, Vertical Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm) Fuse Type: Board Mount (Cartridge Style Excluded) Mounting Type: Through Hole Operating Temperature: -25°C ~ 70°C Response Time: Fast Blow Approval Agency: CSA, UL Breaking Capacity @ Rated Voltage: 50A Current Rating (Amps): 80 mA Voltage Rating - AC: 125 V Voltage Rating - DC: 63 V Melting I²t: 2.0E-4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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30300800131 | Littelfuse Inc. |
Description: FUSE BOARD MNT 80MA 125VAC 63VDC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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30301000001 | Littelfuse Inc. |
Description: FUSE BRD MNT 100MA 125VAC 63VDCPackaging: Tape & Box (TB) Package / Case: Radial, Can, Vertical Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm) Fuse Type: Board Mount (Cartridge Style Excluded) Mounting Type: Through Hole Operating Temperature: -25°C ~ 70°C Response Time: Fast Blow Approval Agency: CSA, UL Breaking Capacity @ Rated Voltage: 50A Current Rating (Amps): 100 mA Voltage Rating - AC: 125 V Voltage Rating - DC: 63 V Melting I²t: 4.0E-4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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30301000131 | Littelfuse Inc. |
Description: FUSE BRD MNT 100MA 125VAC 63VDCPackaging: Bulk Package / Case: Radial, Can, Vertical Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm) Fuse Type: Board Mount (Cartridge Style Excluded) Mounting Type: Through Hole Operating Temperature: -25°C ~ 70°C Response Time: Fast Blow Approval Agency: CSA, UL Breaking Capacity @ Rated Voltage: 50A Part Status: Active Current Rating (Amps): 100 mA Voltage Rating - AC: 125 V Voltage Rating - DC: 63 V Melting I²t: 4.0E-4 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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30301250001 | Littelfuse Inc. |
Description: FUSE BRD MNT 125MA 125VAC 63VDC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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30301250131 | Littelfuse Inc. |
Description: FUSE BRD MNT 125MA 125VAC 63VDC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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30301600001 | Littelfuse Inc. |
Description: FUSE BRD MNT 160MA 125VAC 63VDC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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30301600131 | Littelfuse Inc. |
Description: FUSE BRD MNT 160MA 125VAC 63VDCPackaging: Bulk Package / Case: Radial, Can, Vertical Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm) Fuse Type: Board Mount (Cartridge Style Excluded) Mounting Type: Through Hole Operating Temperature: -25°C ~ 70°C Response Time: Fast Blow Approval Agency: CSA, UL Breaking Capacity @ Rated Voltage: 50A Current Rating (Amps): 160 mA Voltage Rating - AC: 125 V Voltage Rating - DC: 63 V Melting I²t: 0.0029 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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30302000001 | Littelfuse Inc. |
Description: FUSE BRD MNT 200MA 125VAC 63VDC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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30302000131 | Littelfuse Inc. |
Description: FUSE BRD MNT 200MA 125VAC 63VDC |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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30302500001 | Littelfuse Inc. |
Description: FUSE BRD MNT 250MA 125VAC 63VDCPackaging: Tape & Box (TB) Package / Case: Radial, Can, Vertical Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm) Fuse Type: Board Mount (Cartridge Style Excluded) Mounting Type: Through Hole Operating Temperature: -25°C ~ 70°C Response Time: Fast Blow Approval Agency: CSA, UL Breaking Capacity @ Rated Voltage: 50A Current Rating (Amps): 250 mA Voltage Rating - AC: 125 V Voltage Rating - DC: 63 V Melting I²t: 0.0082 |
товару немає в наявності |
В кошику од. на суму грн. | ||||||||||||
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30302500131 | Littelfuse Inc. |
Description: FUSE BRD MNT 250MA 125VAC 63VDCPackaging: Bulk Package / Case: Radial, Can, Vertical Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm) Fuse Type: Board Mount (Cartridge Style Excluded) Mounting Type: Through Hole Operating Temperature: -25°C ~ 70°C Response Time: Fast Blow Approval Agency: CSA, UL Breaking Capacity @ Rated Voltage: 50A Part Status: Active Current Rating (Amps): 250 mA Voltage Rating - AC: 125 V Voltage Rating - DC: 63 V Melting I²t: 0.0082 |
товару немає в наявності |
В кошику од. на суму грн. |
| IXTH3N100P |
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Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Description: MOSFET N-CH 1000V 3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IXTP08N100P |
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Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Description: MOSFET N-CH 1000V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 242 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 200.71 грн |
| 50+ | 108.52 грн |
| 100+ | 103.02 грн |
| IXTP1R4N120P |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1200V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
Description: MOSFET N-CH 1200V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
на замовлення 601 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 408.97 грн |
| 50+ | 311.96 грн |
| 100+ | 267.39 грн |
| 500+ | 223.05 грн |
| IXTP2N100P |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
Description: MOSFET N-CH 1000V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
на замовлення 30 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 266.21 грн |
| IXTP90N15T |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 150V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
Description: MOSFET N-CH 150V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 424.93 грн |
| IXTY08N100P |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
Description: MOSFET N-CH 1000V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 630 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 350+ | 133.80 грн |
| IXTY2N100P |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 2A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
Description: MOSFET N-CH 1000V 2A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
на замовлення 1341 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 283.85 грн |
| 70+ | 133.44 грн |
| 140+ | 129.81 грн |
| 560+ | 111.59 грн |
| 1050+ | 104.67 грн |
| IXTA100N04T2 |
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Виробник: Littelfuse Inc.
Description: MOSFET N-CH 40V 100A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V
Description: MOSFET N-CH 40V 100A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IXTA102N15T |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 150V 102A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 25 V
Description: MOSFET N-CH 150V 102A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 500mA, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 87 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5220 pF @ 25 V
на замовлення 806 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 362.78 грн |
| 50+ | 247.44 грн |
| 100+ | 221.41 грн |
| 500+ | 180.00 грн |
| IXTA110N055T2 |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IXTA32P05T |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 50V 32A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
Description: MOSFET P-CH 50V 32A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
на замовлення 675 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 212.46 грн |
| 50+ | 161.93 грн |
| 100+ | 138.79 грн |
| 500+ | 115.78 грн |
| IXTA44P15T |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 150V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
Description: MOSFET P-CH 150V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 1601 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 538.30 грн |
| 50+ | 310.53 грн |
| 100+ | 285.12 грн |
| 500+ | 228.00 грн |
| IXTA52P10P |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 100V 52A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
Description: MOSFET P-CH 100V 52A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
на замовлення 1203 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 574.41 грн |
| 50+ | 300.42 грн |
| 100+ | 276.06 грн |
| 500+ | 222.71 грн |
| IXTA90N055T2 |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 55V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
Description: MOSFET N-CH 55V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
товару немає в наявності
В кошику
од. на суму грн.
| IXTH10P50P |
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Виробник: Littelfuse Inc.
Description: MOSFET P-CH 500V 10A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Description: MOSFET P-CH 500V 10A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
на замовлення 217 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 640.75 грн |
| 30+ | 393.42 грн |
| 120+ | 333.05 грн |
| IXTH110N25T |
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Виробник: Littelfuse Inc.
Description: MOSFET N-CH 250V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
Description: MOSFET N-CH 250V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
на замовлення 71 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 771.76 грн |
| 30+ | 592.76 грн |
| IXTH16P60P |
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Виробник: Littelfuse Inc.
Description: MOSFET P-CH 600V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
Description: MOSFET P-CH 600V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
на замовлення 266 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 921.24 грн |
| 30+ | 565.18 грн |
| 120+ | 508.77 грн |
| IXTH20P50P |
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Виробник: Littelfuse Inc.
Description: MOSFET P-CH 500V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 10A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
Description: MOSFET P-CH 500V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 10A, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
на замовлення 1326 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 961.55 грн |
| 30+ | 580.87 грн |
| 120+ | 506.58 грн |
| 510+ | 461.46 грн |
| IXTH44P15T |
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Виробник: Littelfuse Inc.
Description: MOSFET P-CH 150V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
Description: MOSFET P-CH 150V 44A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 275 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 608.00 грн |
| 30+ | 362.83 грн |
| 120+ | 311.31 грн |
| IXTH76P10T |
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Виробник: Littelfuse Inc.
Description: MOSFET P-CH 100V 76A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
Description: MOSFET P-CH 100V 76A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 3054 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 478.67 грн |
| 30+ | 298.27 грн |
| IXTH90P10P |
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Виробник: Littelfuse Inc.
Description: MOSFET P-CH 100V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Description: MOSFET P-CH 100V 90A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
на замовлення 527 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 966.59 грн |
| 30+ | 618.64 грн |
| 120+ | 530.44 грн |
| 510+ | 480.01 грн |
| IXTK170P10P |
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Виробник: Littelfuse Inc.
Description: MOSFET P-CH 100V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Description: MOSFET P-CH 100V 170A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 1054 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1591.38 грн |
| 25+ | 1037.69 грн |
| 100+ | 935.87 грн |
| IXTK32P60P |
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Виробник: Littelfuse Inc.
Description: MOSFET P-CH 600V 32A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Description: MOSFET P-CH 600V 32A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
на замовлення 170 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1662.76 грн |
| 25+ | 1038.86 грн |
| 100+ | 966.85 грн |
| IXTK40P50P |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 500V 40A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
Description: MOSFET P-CH 500V 40A TO264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-264 (IXTK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
на замовлення 1381 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1622.45 грн |
| 25+ | 1037.69 грн |
| 100+ | 935.87 грн |
| IXTN170P10P |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 100V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Description: MOSFET P-CH 100V 170A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 286 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2831.74 грн |
| 10+ | 2023.87 грн |
| 100+ | 1804.75 грн |
| IXTN40P50P |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 500V 40A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
Description: MOSFET P-CH 500V 40A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
на замовлення 67 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 2846.01 грн |
| 10+ | 2435.25 грн |
| IXTP100N04T2 |
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Виробник: Littelfuse Inc.
Description: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V
Description: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 25.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2690 pF @ 25 V
на замовлення 269 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 213.30 грн |
| 50+ | 110.24 грн |
| 100+ | 104.43 грн |
| IXTP170N075T2 |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 75V 170A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 25 V
Description: MOSFET N-CH 75V 170A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6860 pF @ 25 V
на замовлення 326 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 322.48 грн |
| 50+ | 173.33 грн |
| 100+ | 157.37 грн |
| IXTP18P10T |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 100V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Description: MOSFET P-CH 100V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
на замовлення 3095 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 2+ | 248.57 грн |
| 50+ | 132.27 грн |
| 100+ | 114.58 грн |
| 500+ | 90.33 грн |
| 1000+ | 77.42 грн |
| 2000+ | 75.27 грн |
| IXTP28P065T |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 65V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
Description: MOSFET P-CH 65V 28A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 14A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 65 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2030 pF @ 25 V
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| IXTP44P15T |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 150V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
Description: MOSFET P-CH 150V 44A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 518 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 524.02 грн |
| 50+ | 303.17 грн |
| 100+ | 278.04 грн |
| 500+ | 225.44 грн |
| IXTP70N075T2 |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 75V 70A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V
Description: MOSFET N-CH 75V 70A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2725 pF @ 25 V
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| IXTP76P10T |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 100V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
Description: MOSFET P-CH 100V 76A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 8263 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 495.47 грн |
| 50+ | 257.71 грн |
| 100+ | 236.51 грн |
| 500+ | 221.49 грн |
| IXTP90N075T2 |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 75V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Description: MOSFET N-CH 75V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
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| IXTQ10P50P |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 500V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Description: MOSFET P-CH 500V 10A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
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| IXTQ44P15T |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 150V 44A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
Description: MOSFET P-CH 150V 44A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 500mA, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-3P
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 642.43 грн |
| 30+ | 360.00 грн |
| 120+ | 303.25 грн |
| IXTR170P10P |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 100V 108A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
Description: MOSFET P-CH 100V 108A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 108A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 85A, 10V
Power Dissipation (Max): 312W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12600 pF @ 25 V
на замовлення 1189 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1933.17 грн |
| 30+ | 1189.67 грн |
| 120+ | 1107.81 грн |
| IXTR20P50P |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 500V 13A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 10A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
Description: MOSFET P-CH 500V 13A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 490mOhm @ 10A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
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| IXTR32P60P |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 600V 18A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 16A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Description: MOSFET P-CH 600V 18A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 385mOhm @ 16A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
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| IXTT16P60P |
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Виробник: Littelfuse Inc.
Description: MOSFET P-CH 600V 16A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
Description: MOSFET P-CH 600V 16A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
на замовлення 365 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1126.98 грн |
| 30+ | 706.30 грн |
| 120+ | 610.10 грн |
| IXTT90P10P |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 100V 90A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
Description: MOSFET P-CH 100V 90A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 45A, 10V
Power Dissipation (Max): 462W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 25 V
на замовлення 212 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1288.22 грн |
| 30+ | 764.93 грн |
| 120+ | 660.76 грн |
| IXTX32P60P |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 600V 32A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
Description: MOSFET P-CH 600V 32A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 16A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
на замовлення 431 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1686.28 грн |
| 30+ | 1227.57 грн |
| 120+ | 1073.96 грн |
| IXTX40P50P |
![]() |
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 500V 40A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
Description: MOSFET P-CH 500V 40A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 20A, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 205 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11500 pF @ 25 V
на замовлення 1159 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1581.30 грн |
| 30+ | 1262.83 грн |
| 120+ | 1183.89 грн |
| 510+ | 948.08 грн |
| Q4006N4RP |
![]() |
Виробник: Littelfuse Inc.
Description: TRIAC 400V 6A TO263
Description: TRIAC 400V 6A TO263
товару немає в наявності
В кошику
од. на суму грн.
| 30300500001 |
![]() |
Виробник: Littelfuse Inc.
Description: FUSE BOARD MNT 50MA 125VAC 63VDC
Description: FUSE BOARD MNT 50MA 125VAC 63VDC
товару немає в наявності
В кошику
од. на суму грн.
| 30300500131 |
![]() |
Виробник: Littelfuse Inc.
Description: FUSE BOARD MNT 50MA 125VAC 63VDC
Description: FUSE BOARD MNT 50MA 125VAC 63VDC
товару немає в наявності
В кошику
од. на суму грн.
| 30300630001 |
![]() |
Виробник: Littelfuse Inc.
Description: FUSE BOARD MNT 63MA 125VAC 63VDC
Description: FUSE BOARD MNT 63MA 125VAC 63VDC
товару немає в наявності
В кошику
од. на суму грн.
| 30300630131 |
![]() |
Виробник: Littelfuse Inc.
Description: FUSE BRD MNT 63MA 125VAC 63VDC
Packaging: Bulk
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 70°C
Response Time: Fast Blow
Approval Agency: CSA, UL
Breaking Capacity @ Rated Voltage: 50A
Current Rating (Amps): 63 mA
Voltage Rating - AC: 125 V
Voltage Rating - DC: 63 V
Melting I²t: 1.3E-4
Description: FUSE BRD MNT 63MA 125VAC 63VDC
Packaging: Bulk
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 70°C
Response Time: Fast Blow
Approval Agency: CSA, UL
Breaking Capacity @ Rated Voltage: 50A
Current Rating (Amps): 63 mA
Voltage Rating - AC: 125 V
Voltage Rating - DC: 63 V
Melting I²t: 1.3E-4
товару немає в наявності
В кошику
од. на суму грн.
| 30300800001 |
![]() |
Виробник: Littelfuse Inc.
Description: FUSE BRD MNT 80MA 125VAC 63VDC
Packaging: Tape & Box (TB)
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 70°C
Response Time: Fast Blow
Approval Agency: CSA, UL
Breaking Capacity @ Rated Voltage: 50A
Current Rating (Amps): 80 mA
Voltage Rating - AC: 125 V
Voltage Rating - DC: 63 V
Melting I²t: 2.0E-4
Description: FUSE BRD MNT 80MA 125VAC 63VDC
Packaging: Tape & Box (TB)
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 70°C
Response Time: Fast Blow
Approval Agency: CSA, UL
Breaking Capacity @ Rated Voltage: 50A
Current Rating (Amps): 80 mA
Voltage Rating - AC: 125 V
Voltage Rating - DC: 63 V
Melting I²t: 2.0E-4
товару немає в наявності
В кошику
од. на суму грн.
| 30300800131 |
![]() |
Виробник: Littelfuse Inc.
Description: FUSE BOARD MNT 80MA 125VAC 63VDC
Description: FUSE BOARD MNT 80MA 125VAC 63VDC
товару немає в наявності
В кошику
од. на суму грн.
| 30301000001 |
![]() |
Виробник: Littelfuse Inc.
Description: FUSE BRD MNT 100MA 125VAC 63VDC
Packaging: Tape & Box (TB)
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 70°C
Response Time: Fast Blow
Approval Agency: CSA, UL
Breaking Capacity @ Rated Voltage: 50A
Current Rating (Amps): 100 mA
Voltage Rating - AC: 125 V
Voltage Rating - DC: 63 V
Melting I²t: 4.0E-4
Description: FUSE BRD MNT 100MA 125VAC 63VDC
Packaging: Tape & Box (TB)
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 70°C
Response Time: Fast Blow
Approval Agency: CSA, UL
Breaking Capacity @ Rated Voltage: 50A
Current Rating (Amps): 100 mA
Voltage Rating - AC: 125 V
Voltage Rating - DC: 63 V
Melting I²t: 4.0E-4
товару немає в наявності
В кошику
од. на суму грн.
| 30301000131 |
![]() |
Виробник: Littelfuse Inc.
Description: FUSE BRD MNT 100MA 125VAC 63VDC
Packaging: Bulk
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 70°C
Response Time: Fast Blow
Approval Agency: CSA, UL
Breaking Capacity @ Rated Voltage: 50A
Part Status: Active
Current Rating (Amps): 100 mA
Voltage Rating - AC: 125 V
Voltage Rating - DC: 63 V
Melting I²t: 4.0E-4
Description: FUSE BRD MNT 100MA 125VAC 63VDC
Packaging: Bulk
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 70°C
Response Time: Fast Blow
Approval Agency: CSA, UL
Breaking Capacity @ Rated Voltage: 50A
Part Status: Active
Current Rating (Amps): 100 mA
Voltage Rating - AC: 125 V
Voltage Rating - DC: 63 V
Melting I²t: 4.0E-4
товару немає в наявності
В кошику
од. на суму грн.
| 30301250001 |
![]() |
Виробник: Littelfuse Inc.
Description: FUSE BRD MNT 125MA 125VAC 63VDC
Description: FUSE BRD MNT 125MA 125VAC 63VDC
товару немає в наявності
В кошику
од. на суму грн.
| 30301250131 |
![]() |
Виробник: Littelfuse Inc.
Description: FUSE BRD MNT 125MA 125VAC 63VDC
Description: FUSE BRD MNT 125MA 125VAC 63VDC
товару немає в наявності
В кошику
од. на суму грн.
| 30301600001 |
![]() |
Виробник: Littelfuse Inc.
Description: FUSE BRD MNT 160MA 125VAC 63VDC
Description: FUSE BRD MNT 160MA 125VAC 63VDC
товару немає в наявності
В кошику
од. на суму грн.
| 30301600131 |
![]() |
Виробник: Littelfuse Inc.
Description: FUSE BRD MNT 160MA 125VAC 63VDC
Packaging: Bulk
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 70°C
Response Time: Fast Blow
Approval Agency: CSA, UL
Breaking Capacity @ Rated Voltage: 50A
Current Rating (Amps): 160 mA
Voltage Rating - AC: 125 V
Voltage Rating - DC: 63 V
Melting I²t: 0.0029
Description: FUSE BRD MNT 160MA 125VAC 63VDC
Packaging: Bulk
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 70°C
Response Time: Fast Blow
Approval Agency: CSA, UL
Breaking Capacity @ Rated Voltage: 50A
Current Rating (Amps): 160 mA
Voltage Rating - AC: 125 V
Voltage Rating - DC: 63 V
Melting I²t: 0.0029
товару немає в наявності
В кошику
од. на суму грн.
| 30302000001 |
![]() |
Виробник: Littelfuse Inc.
Description: FUSE BRD MNT 200MA 125VAC 63VDC
Description: FUSE BRD MNT 200MA 125VAC 63VDC
товару немає в наявності
В кошику
од. на суму грн.
| 30302000131 |
![]() |
Виробник: Littelfuse Inc.
Description: FUSE BRD MNT 200MA 125VAC 63VDC
Description: FUSE BRD MNT 200MA 125VAC 63VDC
товару немає в наявності
В кошику
од. на суму грн.
| 30302500001 |
![]() |
Виробник: Littelfuse Inc.
Description: FUSE BRD MNT 250MA 125VAC 63VDC
Packaging: Tape & Box (TB)
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 70°C
Response Time: Fast Blow
Approval Agency: CSA, UL
Breaking Capacity @ Rated Voltage: 50A
Current Rating (Amps): 250 mA
Voltage Rating - AC: 125 V
Voltage Rating - DC: 63 V
Melting I²t: 0.0082
Description: FUSE BRD MNT 250MA 125VAC 63VDC
Packaging: Tape & Box (TB)
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 70°C
Response Time: Fast Blow
Approval Agency: CSA, UL
Breaking Capacity @ Rated Voltage: 50A
Current Rating (Amps): 250 mA
Voltage Rating - AC: 125 V
Voltage Rating - DC: 63 V
Melting I²t: 0.0082
товару немає в наявності
В кошику
од. на суму грн.
| 30302500131 |
![]() |
Виробник: Littelfuse Inc.
Description: FUSE BRD MNT 250MA 125VAC 63VDC
Packaging: Bulk
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 70°C
Response Time: Fast Blow
Approval Agency: CSA, UL
Breaking Capacity @ Rated Voltage: 50A
Part Status: Active
Current Rating (Amps): 250 mA
Voltage Rating - AC: 125 V
Voltage Rating - DC: 63 V
Melting I²t: 0.0082
Description: FUSE BRD MNT 250MA 125VAC 63VDC
Packaging: Bulk
Package / Case: Radial, Can, Vertical
Size / Dimension: 0.236" Dia x 0.315" H (6.00mm x 8.00mm)
Fuse Type: Board Mount (Cartridge Style Excluded)
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 70°C
Response Time: Fast Blow
Approval Agency: CSA, UL
Breaking Capacity @ Rated Voltage: 50A
Part Status: Active
Current Rating (Amps): 250 mA
Voltage Rating - AC: 125 V
Voltage Rating - DC: 63 V
Melting I²t: 0.0082
товару немає в наявності
В кошику
од. на суму грн.












