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TVB065NSB-L TVB065NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 65V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 123pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 88V
Voltage - Off State: 65V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
товару немає в наявності
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TVB065NSC-L TVB065NSC-L Littelfuse Inc. TVBxxxNSC-L.pdf Description: THYRISTOR 65V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 198pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 88V
Voltage - Off State: 65V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
товару немає в наявності
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TVB075NSB-L TVB075NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 75V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 122pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 98V
Voltage - Off State: 75V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
товару немає в наявності
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TVB090NSB-L TVB090NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 90V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 95pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
товару немає в наявності
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TVB120NSB-L TVB120NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 120V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 160V
Voltage - Off State: 120V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
товару немає в наявності
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TVB140NSB-L TVB140NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 140V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 70pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
товару немає в наявності
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TVB170NSA-L TVB170NSA-L Littelfuse Inc. TVBxxxNSA-L.pdf Description: THYRISTOR 170V 150A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 39pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 220V
Voltage - Off State: 170V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Part Status: Obsolete
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
товару немає в наявності
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TVB170NSB-L TVB170NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 170V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 59pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 220V
Voltage - Off State: 170V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
товару немає в наявності
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TVB180NSB-L TVB180NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 180V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 59pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 240V
Voltage - Off State: 180V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
товару немає в наявності
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TVB190NSA-L TVB190NSA-L Littelfuse Inc. TVBxxxNSA-L.pdf Description: THYRISTOR 190V 150A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 36pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 260V
Voltage - Off State: 190V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
товару немає в наявності
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TVB190NSB-L TVB190NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 190V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 56pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 260V
Voltage - Off State: 190V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
товару немає в наявності
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TVB220NSB-L TVB220NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 220V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 52pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 300V
Voltage - Off State: 220V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
товару немає в наявності
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TVB220NSC-L TVB220NSC-L Littelfuse Inc. TVBxxxNSC-L.pdf Description: THYRISTOR 220V 400A DO214AA
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TVB275NSB-L TVB275NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 275V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 47pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 350V
Voltage - Off State: 275V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
товару немає в наявності
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TVB320NSB-L TVB320NSB-L Littelfuse Inc. TVBxxxNSB-L.pdf Description: THYRISTOR 320V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 44pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 400V
Voltage - Off State: 320V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Part Status: Obsolete
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
товару немає в наявності
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IXFB30N120P IXFB30N120P Littelfuse Inc. Description: MOSFET N-CH 1200V 30A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22500 pF @ 25 V
на замовлення 545 шт:
термін постачання 21-31 дні (днів)
1+3131.90 грн
25+2294.08 грн
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IXFB44N100P IXFB44N100P Littelfuse Inc. Description: MOSFET N-CH 1000V 44A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
на замовлення 268 шт:
термін постачання 21-31 дні (днів)
1+2334.84 грн
25+1546.22 грн
100+1482.67 грн
В кошику  од. на суму  грн.
IXFH15N100P IXFH15N100P Littelfuse Inc. Description: MOSFET N-CH 1000V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
на замовлення 755 шт:
термін постачання 21-31 дні (днів)
1+920.12 грн
30+534.20 грн
120+457.20 грн
510+410.15 грн
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IXFH16N120P IXFH16N120P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_16n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 8A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
товару немає в наявності
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IXFH20N100P IXFH20N100P Littelfuse Inc. Description: MOSFET N-CH 1000V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
на замовлення 259 шт:
термін постачання 21-31 дні (днів)
1+681.95 грн
30+552.39 грн
120+541.63 грн
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IXFK26N100P IXFK26N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_26n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 26A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
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IXFK32N100P IXFK32N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_32n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 32A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
1+1712.43 грн
25+1125.57 грн
100+1117.25 грн
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IXFL44N100P IXFL44N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfl44n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 22A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 22A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXFN26N100P IXFN26N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn26n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 23A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
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IXFN30N120P IXFN30N120P Littelfuse Inc. Description: MOSFET N-CH 1200V 30A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
товару немає в наявності
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IXFN32N100P IXFN32N100P Littelfuse Inc. Description: MOSFET N-CH 1000V 27A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
на замовлення 623 шт:
термін постачання 21-31 дні (днів)
1+2857.22 грн
10+2046.00 грн
100+1835.37 грн
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IXFN38N100P IXFN38N100P Littelfuse Inc. Description: MOSFET N-CH 1000V 38A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 19A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
на замовлення 224 шт:
термін постачання 21-31 дні (днів)
1+3710.65 грн
10+2698.49 грн
100+2536.68 грн
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IXFR26N100P IXFR26N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr26n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 15A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 13A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
товару немає в наявності
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IXFT16N120P IXFT16N120P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_16n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 16A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 500mA, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 62 шт:
термін постачання 21-31 дні (днів)
1+1547.30 грн
30+1234.98 грн
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IXFX20N120P IXFX20N120P Littelfuse Inc. Description: MOSFET N-CH 1200V 20A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
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IXFX26N100P IXFX26N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_26n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 26A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
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IXFX32N100P IXFX32N100P Littelfuse Inc. Description: MOSFET N-CH 1000V 32A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
на замовлення 318 шт:
термін постачання 21-31 дні (днів)
1+1779.11 грн
30+1095.49 грн
120+1021.06 грн
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IXKH35N60C5 IXKH35N60C5 Littelfuse Inc. Description: MOSFET N-CH 600V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
на замовлення 313 шт:
термін постачання 21-31 дні (днів)
1+978.87 грн
30+572.04 грн
120+490.72 грн
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IXKH70N60C5 IXKH70N60C5 Littelfuse Inc. Description: MOSFET N-CH 600V 70A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
на замовлення 274 шт:
термін постачання 21-31 дні (днів)
1+1456.79 грн
30+1051.22 грн
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IXTA08N120P IXTA08N120P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_08n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 25 V
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
2+292.15 грн
50+222.88 грн
100+191.04 грн
500+159.36 грн
1000+136.46 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA1R4N100P IXTA1R4N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 1.4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
на замовлення 112 шт:
термін постачання 21-31 дні (днів)
2+273.10 грн
50+145.08 грн
100+133.01 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA3N100P IXTA3N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_3n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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IXTH3N100P IXTH3N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_3n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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IXTP08N100P IXTP08N100P Littelfuse Inc. littelfuse-discrete-mosfets-ixt-08n100p-datasheet?assetguid=c03e6d51-d539-4f4a-ad31-08df60c8fd6a Description: MOSFET N-CH 1000V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 242 шт:
термін постачання 21-31 дні (днів)
2+189.74 грн
50+102.59 грн
100+97.39 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTP1R4N120P IXTP1R4N120P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n120p_datasheet.pdf.pdf Description: MOSFET N-CH 1200V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
на замовлення 601 шт:
термін постачання 21-31 дні (днів)
1+386.63 грн
50+294.91 грн
100+252.78 грн
500+210.87 грн
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IXTP2N100P IXTP2N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_2n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
2+316.76 грн
50+156.96 грн
100+142.59 грн
Мінімальне замовлення: 2
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IXTP36N30P IXTP36N30P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_36n30p_datasheet.pdf.pdf Description: MOSFET N-CH 300V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 2358 шт:
термін постачання 21-31 дні (днів)
1+374.72 грн
50+203.16 грн
100+187.19 грн
500+153.73 грн
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IXTP90N15T IXTP90N15T Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf Description: MOSFET N-CH 150V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
1+401.71 грн
В кошику  од. на суму  грн.
IXTY08N100P IXTY08N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_08n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 630 шт:
термін постачання 21-31 дні (днів)
350+126.49 грн
Мінімальне замовлення: 350
В кошику  од. на суму  грн.
IXTY2N100P IXTY2N100P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_2n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 2A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
на замовлення 1065 шт:
термін постачання 21-31 дні (днів)
2+246.11 грн
70+187.63 грн
140+160.83 грн
560+134.16 грн
1050+114.88 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXFH160N15T IXFH160N15T Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixfh160n15t_datasheet.pdf.pdf Description: MOSFET N-CH 150V 160A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
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IXTA110N055T2 IXTA110N055T2 Littelfuse Inc. littelfuse-discrete-mosfets-ixt-110n055t2-datasheet?assetguid=21c020da-ce9b-49ec-a4f7-c30b99262b3a Description: MOSFET N-CH 55V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
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IXTA18P10T IXTA18P10T Littelfuse Inc. littelfuse_discrete_mosfets_p-channel_ixt_18p10t_datasheet.pdf.pdf Description: MOSFET P-CH 100V 18A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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IXTA200N055T2 IXTA200N055T2 Littelfuse Inc. Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXT-200N055T2-Datasheet.PDF?assetguid=B44D58FE-55F9-4C2C-B4B4-13EDAC81DC00 Description: MOSFET N-CH 55V 200A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
на замовлення 1199 шт:
термін постачання 21-31 дні (днів)
1+376.30 грн
50+188.61 грн
100+171.83 грн
500+133.67 грн
1000+125.63 грн
В кошику  од. на суму  грн.
IXTA24P085T IXTA24P085T Littelfuse Inc. littelfuse_discrete_mosfets_p-channel_ixt_24p085t_datasheet.pdf.pdf Description: MOSFET P-CH 85V 24A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 25 V
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
2+234.20 грн
50+122.98 грн
100+112.49 грн
500+88.08 грн
1000+84.39 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA26P20P IXTA26P20P Littelfuse Inc. IX%28T%2CH%2CP%2CQ%29A26P20P.pdf Description: MOSFET P-CH 200V 26A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
на замовлення 2291 шт:
термін постачання 21-31 дні (днів)
1+572.40 грн
50+353.71 грн
100+338.97 грн
500+262.16 грн
В кошику  од. на суму  грн.
IXTA32P05T IXTA32P05T Littelfuse Inc. littelfuse_discrete_mosfets_p-channel_ixt_32p05t_datasheet.pdf.pdf Description: MOSFET P-CH 50V 32A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
на замовлення 675 шт:
термін постачання 21-31 дні (днів)
2+200.85 грн
50+153.08 грн
100+131.21 грн
500+109.45 грн
Мінімальне замовлення: 2
В кошику  од. на суму  грн.
IXTA44P15T IXTA44P15T Littelfuse Inc. littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2 Description: MOSFET P-CH 150V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 1601 шт:
термін постачання 21-31 дні (днів)
1+508.88 грн
50+293.56 грн
100+269.54 грн
500+215.55 грн
В кошику  од. на суму  грн.
IXTA52P10P IXTA52P10P Littelfuse Inc. Littelfuse-Discrete-MOSFETs-P-Channel-IXT-52P10P-Datasheet.PDF?assetguid=B047FBE5-952B-40C8-BFA0-176E9733DB4B Description: MOSFET P-CH 100V 52A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
на замовлення 1401 шт:
термін постачання 21-31 дні (днів)
1+580.34 грн
50+307.37 грн
100+282.44 грн
500+227.86 грн
В кошику  од. на суму  грн.
IXTA76P10T IXTA76P10T Littelfuse Inc. littelfuse-discrete-mosfets-ixt-76p10t-datasheet?assetguid=23b99775-b9cd-4489-8d98-f9dd1fd0df4a Description: MOSFET P-CH 100V 76A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 1686 шт:
термін постачання 21-31 дні (днів)
1+551.75 грн
50+293.56 грн
100+269.54 грн
500+215.55 грн
В кошику  од. на суму  грн.
IXTA90N055T2 IXTA90N055T2 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_90n055t2_datasheet.pdf.pdf Description: MOSFET N-CH 55V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
товару немає в наявності
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IXTA96P085T IXTA96P085T Littelfuse Inc. littelfuse_discrete_mosfets_p-channel_ixt_96p085t_datasheet.pdf.pdf Description: MOSFET P-CH 85V 96A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 6762 шт:
термін постачання 21-31 дні (днів)
1+446.17 грн
50+343.36 грн
100+307.21 грн
500+254.39 грн
1000+228.95 грн
2000+214.53 грн
В кошику  од. на суму  грн.
IXTH10P50P IXTH10P50P Littelfuse Inc. littelfuse-discrete-mosfets-ixt-10p50p-datasheet?assetguid=02d9f7f4-854a-4f4b-b3f3-dc66c452f634 Description: MOSFET P-CH 500V 10A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
на замовлення 182 шт:
термін постачання 21-31 дні (днів)
1+696.24 грн
30+404.97 грн
120+342.82 грн
В кошику  од. на суму  грн.
IXTH110N25T IXTH110N25T Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_trench_gate_ixth110n25t_datasheet.pdf.pdf Description: MOSFET N-CH 250V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
на замовлення 71 шт:
термін постачання 21-31 дні (днів)
1+729.59 грн
30+560.37 грн
В кошику  од. на суму  грн.
IXTH16P60P IXTH16P60P Littelfuse Inc. media?resourcetype=datasheets&itemid=A77013E2-E6CF-4AB2-A85B-2F133B071255&filename=Littelfuse-Discrete-MOSFETs-P-Channel-IXT-16P60P-Datasheet.PDF Description: MOSFET P-CH 600V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
на замовлення 266 шт:
термін постачання 21-31 дні (днів)
1+870.90 грн
30+534.30 грн
120+480.97 грн
В кошику  од. на суму  грн.
TVB065NSB-L TVBxxxNSB-L.pdf
TVB065NSB-L
Виробник: Littelfuse Inc.
Description: THYRISTOR 65V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 123pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 88V
Voltage - Off State: 65V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
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TVB065NSC-L TVBxxxNSC-L.pdf
TVB065NSC-L
Виробник: Littelfuse Inc.
Description: THYRISTOR 65V 400A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 198pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 88V
Voltage - Off State: 65V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 100 A
Current - Peak Pulse (8/20µs): 400 A
товару немає в наявності
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TVB075NSB-L TVBxxxNSB-L.pdf
TVB075NSB-L
Виробник: Littelfuse Inc.
Description: THYRISTOR 75V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 122pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 98V
Voltage - Off State: 75V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
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TVB090NSB-L TVBxxxNSB-L.pdf
TVB090NSB-L
Виробник: Littelfuse Inc.
Description: THYRISTOR 90V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 95pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
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TVB120NSB-L TVBxxxNSB-L.pdf
TVB120NSB-L
Виробник: Littelfuse Inc.
Description: THYRISTOR 120V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 75pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 160V
Voltage - Off State: 120V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
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TVB140NSB-L TVBxxxNSB-L.pdf
TVB140NSB-L
Виробник: Littelfuse Inc.
Description: THYRISTOR 140V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 70pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 180V
Voltage - Off State: 140V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
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TVB170NSA-L TVBxxxNSA-L.pdf
TVB170NSA-L
Виробник: Littelfuse Inc.
Description: THYRISTOR 170V 150A DO214AA
Packaging: Tape & Reel (TR)
Capacitance: 39pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 220V
Voltage - Off State: 170V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Part Status: Obsolete
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
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TVB170NSB-L TVBxxxNSB-L.pdf
TVB170NSB-L
Виробник: Littelfuse Inc.
Description: THYRISTOR 170V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 59pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 220V
Voltage - Off State: 170V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
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TVB180NSB-L TVBxxxNSB-L.pdf
TVB180NSB-L
Виробник: Littelfuse Inc.
Description: THYRISTOR 180V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 59pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 240V
Voltage - Off State: 180V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
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TVB190NSA-L TVBxxxNSA-L.pdf
TVB190NSA-L
Виробник: Littelfuse Inc.
Description: THYRISTOR 190V 150A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 36pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 260V
Voltage - Off State: 190V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 50 A
Current - Peak Pulse (8/20µs): 150 A
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TVB190NSB-L TVBxxxNSB-L.pdf
TVB190NSB-L
Виробник: Littelfuse Inc.
Description: THYRISTOR 190V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 56pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 260V
Voltage - Off State: 190V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
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TVB220NSB-L TVBxxxNSB-L.pdf
TVB220NSB-L
Виробник: Littelfuse Inc.
Description: THYRISTOR 220V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 52pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 300V
Voltage - Off State: 220V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
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TVB220NSC-L TVBxxxNSC-L.pdf
TVB220NSC-L
Виробник: Littelfuse Inc.
Description: THYRISTOR 220V 400A DO214AA
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TVB275NSB-L TVBxxxNSB-L.pdf
TVB275NSB-L
Виробник: Littelfuse Inc.
Description: THYRISTOR 275V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 47pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 350V
Voltage - Off State: 275V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
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TVB320NSB-L TVBxxxNSB-L.pdf
TVB320NSB-L
Виробник: Littelfuse Inc.
Description: THYRISTOR 320V 250A DO-214AA
Packaging: Tape & Reel (TR)
Capacitance: 44pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 400V
Voltage - Off State: 320V
Voltage - On State: 4 V
Supplier Device Package: DO-214AA
Part Status: Obsolete
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Current - Peak Pulse (8/20µs): 250 A
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IXFB30N120P
IXFB30N120P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1200V 30A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22500 pF @ 25 V
на замовлення 545 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3131.90 грн
25+2294.08 грн
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IXFB44N100P
IXFB44N100P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 44A PLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 22A, 10V
Power Dissipation (Max): 1250W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
на замовлення 268 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2334.84 грн
25+1546.22 грн
100+1482.67 грн
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IXFH15N100P
IXFH15N100P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 15A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 760mOhm @ 500mA, 10V
Power Dissipation (Max): 543W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
на замовлення 755 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+920.12 грн
30+534.20 грн
120+457.20 грн
510+410.15 грн
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IXFH16N120P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_16n120p_datasheet.pdf.pdf
IXFH16N120P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1200V 16A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 8A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
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IXFH20N100P
IXFH20N100P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 20A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 25 V
на замовлення 259 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+681.95 грн
30+552.39 грн
120+541.63 грн
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IXFK26N100P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_26n100p_datasheet.pdf.pdf
IXFK26N100P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 26A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
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IXFK32N100P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_32n100p_datasheet.pdf.pdf
IXFK32N100P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 32A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
на замовлення 300 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1712.43 грн
25+1125.57 грн
100+1117.25 грн
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IXFL44N100P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfl44n100p_datasheet.pdf.pdf
IXFL44N100P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 22A ISOPLUS264
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 240mOhm @ 22A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS264™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXFN26N100P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn26n100p_datasheet.pdf.pdf
IXFN26N100P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 23A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
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IXFN30N120P
IXFN30N120P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1200V 30A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 500mA, 10V
Power Dissipation (Max): 890W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 310 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19000 pF @ 25 V
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IXFN32N100P
IXFN32N100P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 27A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 690W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
на замовлення 623 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+2857.22 грн
10+2046.00 грн
100+1835.37 грн
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IXFN38N100P
IXFN38N100P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 38A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 19A, 10V
Power Dissipation (Max): 1000W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 24000 pF @ 25 V
на замовлення 224 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+3710.65 грн
10+2698.49 грн
100+2536.68 грн
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IXFR26N100P littelfuse_discrete_mosfets_n-channel_hiperfets_ixfr26n100p_datasheet.pdf.pdf
IXFR26N100P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 15A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 430mOhm @ 13A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: ISOPLUS247™
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
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IXFT16N120P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_16n120p_datasheet.pdf.pdf
IXFT16N120P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1200V 16A TO268
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 500mA, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: TO-268AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V
на замовлення 62 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1547.30 грн
30+1234.98 грн
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IXFX20N120P
IXFX20N120P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1200V 20A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 570mOhm @ 10A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 193 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11100 pF @ 25 V
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IXFX26N100P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_26n100p_datasheet.pdf.pdf
IXFX26N100P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 26A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 13A, 10V
Power Dissipation (Max): 780W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11900 pF @ 25 V
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IXFX32N100P
IXFX32N100P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 32A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 16A, 10V
Power Dissipation (Max): 960W (Tc)
Vgs(th) (Max) @ Id: 6.5V @ 1mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 225 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 25 V
на замовлення 318 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1779.11 грн
30+1095.49 грн
120+1021.06 грн
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IXKH35N60C5
IXKH35N60C5
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 600V 35A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 3.9V @ 1.2mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V
на замовлення 313 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+978.87 грн
30+572.04 грн
120+490.72 грн
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IXKH70N60C5
IXKH70N60C5
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 600V 70A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V
Vgs(th) (Max) @ Id: 3.5V @ 3mA
Supplier Device Package: TO-247AD
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V
на замовлення 274 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+1456.79 грн
30+1051.22 грн
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IXTA08N120P littelfuse_discrete_mosfets_n-channel_standard_ixt_08n120p_datasheet.pdf.pdf
IXTA08N120P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1200V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 25 V
на замовлення 1100 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+292.15 грн
50+222.88 грн
100+191.04 грн
500+159.36 грн
1000+136.46 грн
Мінімальне замовлення: 2
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IXTA1R4N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n100p_datasheet.pdf.pdf
IXTA1R4N100P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 1.4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
на замовлення 112 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+273.10 грн
50+145.08 грн
100+133.01 грн
Мінімальне замовлення: 2
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IXTA3N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_3n100p_datasheet.pdf.pdf
IXTA3N100P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 3A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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IXTH3N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_3n100p_datasheet.pdf.pdf
IXTH3N100P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
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IXTP08N100P littelfuse-discrete-mosfets-ixt-08n100p-datasheet?assetguid=c03e6d51-d539-4f4a-ad31-08df60c8fd6a
IXTP08N100P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 242 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+189.74 грн
50+102.59 грн
100+97.39 грн
Мінімальне замовлення: 2
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IXTP1R4N120P littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n120p_datasheet.pdf.pdf
IXTP1R4N120P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1200V 1.4A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V
на замовлення 601 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+386.63 грн
50+294.91 грн
100+252.78 грн
500+210.87 грн
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IXTP2N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_2n100p_datasheet.pdf.pdf
IXTP2N100P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 2A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+316.76 грн
50+156.96 грн
100+142.59 грн
Мінімальне замовлення: 2
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IXTP36N30P littelfuse_discrete_mosfets_n-channel_standard_ixt_36n30p_datasheet.pdf.pdf
IXTP36N30P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 300V 36A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 18A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
на замовлення 2358 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+374.72 грн
50+203.16 грн
100+187.19 грн
500+153.73 грн
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IXTP90N15T littelfuse_discrete_mosfets_n-channel_trench_gate_ixtp90n15t_datasheet.pdf.pdf
IXTP90N15T
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 150V 90A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 45A, 10V
Power Dissipation (Max): 455W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 25 V
на замовлення 25 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+401.71 грн
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IXTY08N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_08n100p_datasheet.pdf.pdf
IXTY08N100P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 50µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 11.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 240 pF @ 25 V
на замовлення 630 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
350+126.49 грн
Мінімальне замовлення: 350
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IXTY2N100P littelfuse_discrete_mosfets_n-channel_standard_ixt_2n100p_datasheet.pdf.pdf
IXTY2N100P
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 1000V 2A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 86W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 24.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 655 pF @ 25 V
на замовлення 1065 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+246.11 грн
70+187.63 грн
140+160.83 грн
560+134.16 грн
1050+114.88 грн
Мінімальне замовлення: 2
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IXFH160N15T littelfuse_discrete_mosfets_n-channel_trench_gate_ixfh160n15t_datasheet.pdf.pdf
IXFH160N15T
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 150V 160A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 9.6mOhm @ 500mA, 10V
Power Dissipation (Max): 830W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8800 pF @ 25 V
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IXTA110N055T2 littelfuse-discrete-mosfets-ixt-110n055t2-datasheet?assetguid=21c020da-ce9b-49ec-a4f7-c30b99262b3a
IXTA110N055T2
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 55V 110A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 25A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3060 pF @ 25 V
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IXTA18P10T littelfuse_discrete_mosfets_p-channel_ixt_18p10t_datasheet.pdf.pdf
IXTA18P10T
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 100V 18A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 9A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
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IXTA200N055T2 Littelfuse-Discrete-MOSFETs-N-Channel-Trench-Gate-IXT-200N055T2-Datasheet.PDF?assetguid=B44D58FE-55F9-4C2C-B4B4-13EDAC81DC00
IXTA200N055T2
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 55V 200A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 50A, 10V
Power Dissipation (Max): 360W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 109 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 25 V
на замовлення 1199 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+376.30 грн
50+188.61 грн
100+171.83 грн
500+133.67 грн
1000+125.63 грн
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IXTA24P085T littelfuse_discrete_mosfets_p-channel_ixt_24p085t_datasheet.pdf.pdf
IXTA24P085T
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 85V 24A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 12A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 25 V
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+234.20 грн
50+122.98 грн
100+112.49 грн
500+88.08 грн
1000+84.39 грн
Мінімальне замовлення: 2
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IXTA26P20P IX%28T%2CH%2CP%2CQ%29A26P20P.pdf
IXTA26P20P
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 200V 26A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 13A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2740 pF @ 25 V
на замовлення 2291 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+572.40 грн
50+353.71 грн
100+338.97 грн
500+262.16 грн
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IXTA32P05T littelfuse_discrete_mosfets_p-channel_ixt_32p05t_datasheet.pdf.pdf
IXTA32P05T
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 50V 32A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 500mA, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V
на замовлення 675 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+200.85 грн
50+153.08 грн
100+131.21 грн
500+109.45 грн
Мінімальне замовлення: 2
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IXTA44P15T littelfuse-discrete-mosfets-ixt-44p15t-datasheet?assetguid=7f3ca350-d79f-4e06-bce3-4b5b84d96ba2
IXTA44P15T
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 150V 44A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 22A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13400 pF @ 25 V
на замовлення 1601 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+508.88 грн
50+293.56 грн
100+269.54 грн
500+215.55 грн
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IXTA52P10P Littelfuse-Discrete-MOSFETs-P-Channel-IXT-52P10P-Datasheet.PDF?assetguid=B047FBE5-952B-40C8-BFA0-176E9733DB4B
IXTA52P10P
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 100V 52A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 52A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
на замовлення 1401 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+580.34 грн
50+307.37 грн
100+282.44 грн
500+227.86 грн
В кошику  од. на суму  грн.
IXTA76P10T littelfuse-discrete-mosfets-ixt-76p10t-datasheet?assetguid=23b99775-b9cd-4489-8d98-f9dd1fd0df4a
IXTA76P10T
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 100V 76A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 38A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 25 V
на замовлення 1686 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+551.75 грн
50+293.56 грн
100+269.54 грн
500+215.55 грн
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IXTA90N055T2 littelfuse_discrete_mosfets_n-channel_trench_gate_ixt_90n055t2_datasheet.pdf.pdf
IXTA90N055T2
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 55V 90A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 8.4mOhm @ 25A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2770 pF @ 25 V
товару немає в наявності
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IXTA96P085T littelfuse_discrete_mosfets_p-channel_ixt_96p085t_datasheet.pdf.pdf
IXTA96P085T
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 85V 96A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 48A, 10V
Power Dissipation (Max): 298W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 85 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
на замовлення 6762 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+446.17 грн
50+343.36 грн
100+307.21 грн
500+254.39 грн
1000+228.95 грн
2000+214.53 грн
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IXTH10P50P littelfuse-discrete-mosfets-ixt-10p50p-datasheet?assetguid=02d9f7f4-854a-4f4b-b3f3-dc66c452f634
IXTH10P50P
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 500V 10A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
на замовлення 182 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+696.24 грн
30+404.97 грн
120+342.82 грн
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IXTH110N25T littelfuse_discrete_mosfets_n-channel_trench_gate_ixth110n25t_datasheet.pdf.pdf
IXTH110N25T
Виробник: Littelfuse Inc.
Description: MOSFET N-CH 250V 110A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 55A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 157 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9400 pF @ 25 V
на замовлення 71 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+729.59 грн
30+560.37 грн
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IXTH16P60P media?resourcetype=datasheets&itemid=A77013E2-E6CF-4AB2-A85B-2F133B071255&filename=Littelfuse-Discrete-MOSFETs-P-Channel-IXT-16P60P-Datasheet.PDF
IXTH16P60P
Виробник: Littelfuse Inc.
Description: MOSFET P-CH 600V 16A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 720mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
на замовлення 266 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+870.90 грн
30+534.30 грн
120+480.97 грн
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