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P5KE110A-BP P5KE110A-BP MCC (Micro Commercial Components) P5KE5.0-P5KE200A(DO-15).pdf Description: TVS DIODE 110VWM 177VC DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 500W
Power Line Protection: No
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P4KE510A-BP P4KE510A-BP MCC (Micro Commercial Components) P4KE6.8A~P4KE550A(DO-41).pdf Description: TVS DIODE 434VWM 698VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 570mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 400W
Power Line Protection: No
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MURS1060A-BP MURS1060A-BP MCC (Micro Commercial Components) MURS1060A(TO-220AC).pdf Description: DIODE STANDARD 600V 10A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MURS1040A-BP MURS1040A-BP MCC (Micro Commercial Components) MURS1040A(TO-220AC).pdf Description: DIODE STANDARD 400V 10A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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MURS1040FA-BP MURS1040FA-BP MCC (Micro Commercial Components) MURS1040FA(ITO-220AC).pdf Description: DIODE STANDARD 400V 10A ITO220AC
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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MURS1060CTA-BP MURS1060CTA-BP MCC (Micro Commercial Components) MURS1060CTA(TO-220AB).pdf Description: DIODE ARRAY GP 600V 10A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MURS1060FA-BP MURS1060FA-BP MCC (Micro Commercial Components) MURS1060FA(ITO-220AC).pdf Description: DIODE STANDARD 600V 10A ITO220AC
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MURS1040FCTA-BP MURS1040FCTA-BP MCC (Micro Commercial Components) MURS1040FCTA(ITO-220AB).pdf Description: DIODE ARRAY GP 400V 10A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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MURS1060FCTA-BP MURS1060FCTA-BP MCC (Micro Commercial Components) MURS1060FCTA(ITO-220AB).pdf Description: DIODE ARRAY GP 600V 10A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MCU80N05YHE3-TP MCC (Micro Commercial Components) MCU80N05YHE3(DPAK).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
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RB520S-40L2-TP RB520S-40L2-TP MCC (Micro Commercial Components) RB520S-40L2(DFN1006-2L).pdf Description: DIODE SCHOTT 40V 200MA DFN10062L
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DFN1006-2L
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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MCMNP2065A-TP MCMNP2065A-TP MCC (Micro Commercial Components) MCMNP2065A(DFN2020-6L).pdf Description: MOSFET N/P-CH 20V 6A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 418pF @ 10V, 880pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V, 51mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.65nC @ 4.5V, 5.41nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2020-6L
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MCMNP2065A-TP MCMNP2065A-TP MCC (Micro Commercial Components) MCMNP2065A(DFN2020-6L).pdf Description: MOSFET N/P-CH 20V 6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 418pF @ 10V, 880pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V, 51mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.65nC @ 4.5V, 5.41nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2020-6L
на замовлення 2375 шт:
термін постачання 21-31 дні (днів)
8+42.55 грн
13+25.21 грн
100+16.07 грн
500+11.35 грн
1000+10.15 грн
Мінімальне замовлення: 8
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CSP522S-30DP-TP CSP522S-30DP-TP MCC (Micro Commercial Components) CSP522S-30DP(0201-A).pdf Description: DIODE SCHOTTKY 30V 100MA 0201A
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 0201-A
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
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CSP522S-30DP-TP CSP522S-30DP-TP MCC (Micro Commercial Components) CSP522S-30DP(0201-A).pdf Description: DIODE SCHOTTKY 30V 100MA 0201A
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 0201-A
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
на замовлення 330 шт:
термін постачання 21-31 дні (днів)
25+13.09 грн
44+7.25 грн
54+5.86 грн
100+4.02 грн
250+3.29 грн
Мінімальне замовлення: 25
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15KP30CAL-TP 15KP30CAL-TP MCC (Micro Commercial Components) 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf Description: TVS DIODE 30VWM 50.7VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 296A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 50.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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MCU40P06-TP MCU40P06-TP MCC (Micro Commercial Components) MCU40P06(DPAK).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 25 V
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MCU40P06Y-TP MCU40P06Y-TP MCC (Micro Commercial Components) MCU40P06Y(DPAK).pdf Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1491 pF @ 25 V
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MIW50N65AH2Y-BP MIW50N65AH2Y-BP MCC (Micro Commercial Components) MIW50N65AH2Y(TO-247AB).PDF Description: IGBT TRENCH FS 650V 80A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 148 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/74ns
Switching Energy: 2.05mJ (on), 360µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 283 W
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SMBJ70CAQ-TP SMBJ70CAQ-TP MCC (Micro Commercial Components) SMBJ5.0AQ_SMBJ190CAQ(SMB).pdf Description: TVS DIODE 70VWM 113VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MSJL120N60FH-TP MSJL120N60FH-TP MCC (Micro Commercial Components) MSJL120N60FH(DFN8080A).pdf Description: N-CHANNEL MOSFET,DFN8080A
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 15.3A, 10V
Power Dissipation (Max): 266W (Tj)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: DFN8080A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+126.40 грн
Мінімальне замовлення: 3000
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MSJL120N60FH-TP MSJL120N60FH-TP MCC (Micro Commercial Components) MSJL120N60FH(DFN8080A).pdf Description: N-CHANNEL MOSFET,DFN8080A
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 15.3A, 10V
Power Dissipation (Max): 266W (Tj)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: DFN8080A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
1+346.12 грн
10+221.17 грн
100+157.51 грн
500+139.82 грн
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SK36B-TP SK36B-TP MCC (Micro Commercial Components) SK32B-SK310B(HSMB).PDF Description: DIODE SCHOTT 60V 3A DO214AA HSMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA, HSMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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MCAC105P15YL-TP MCAC105P15YL-TP MCC (Micro Commercial Components) MCAC105P15YL(DFN5060).pdf Description: P-CHANNEL MOSFET,DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 15A, 10V
Power Dissipation (Max): 189W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3335 pF @ 75 V
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MCTK099N60SH-TP MCTK099N60SH-TP MCC (Micro Commercial Components) Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.5A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15.3A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.1mA
Supplier Device Package: TOLL-8L-KS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2224 pF @ 100 V
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MCTK099N60SH-TP MCTK099N60SH-TP MCC (Micro Commercial Components) Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.5A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15.3A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.1mA
Supplier Device Package: TOLL-8L-KS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2224 pF @ 100 V
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SA16A-BP SA16A-BP MCC (Micro Commercial Components) SA5.0(C)(A)-SA170(C)(A)(DO-15).pdf Description: TVS DIODE 16VWM 26VC DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.6A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 500W
Power Line Protection: No
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ESDSLC18VD3B-TP ESDSLC18VD3B-TP MCC (Micro Commercial Components) ESDSLC18VD3B(SOD-323).pdf Description: ESD,18V,SOD-323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.8V
Voltage - Clamping (Max) @ Ipp: 45V
Power - Peak Pulse: 350W
Power Line Protection: No
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GBU5010-BP GBU5010-BP MCC (Micro Commercial Components) GBU5010(GBU).pdf Description: BRIDGE RECT 1PHASE 1KV 50A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 1953 шт:
термін постачання 21-31 дні (днів)
3+126.01 грн
10+82.65 грн
100+61.13 грн
500+47.97 грн
1000+43.97 грн
Мінімальне замовлення: 3
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ESDSBSLC3V3AE2-TP ESDSBSLC3V3AE2-TP MCC (Micro Commercial Components) ESDSBSLC3V3AE2(0201-A).pdf Description: TVS DIODE 3.3VWM 8.5VC 0201A
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 0201-A
Unidirectional Channels: 2
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 8.5V
Power - Peak Pulse: 34W
Power Line Protection: Yes
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MCTL1D4N04YL-TP MCTL1D4N04YL-TP MCC (Micro Commercial Components) MCTL1D4N04YL(TOLL-8).PDF Description: N-CHANNEL MOSFET,TOLL-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 113W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 20 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2000+58.78 грн
Мінімальне замовлення: 2000
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MCTL1D4N04YL-TP MCTL1D4N04YL-TP MCC (Micro Commercial Components) MCTL1D4N04YL(TOLL-8).PDF Description: N-CHANNEL MOSFET,TOLL-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 113W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 20 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
2+191.47 грн
10+119.06 грн
100+81.91 грн
500+62.71 грн
Мінімальне замовлення: 2
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MCG15P10YHE3-TP MCG15P10YHE3-TP MCC (Micro Commercial Components) MCCProductCatalog.pdf Description: P-CHANNEL MOSFET, DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Qualification: AEC-Q101
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MCG15P10YHE3-TP MCG15P10YHE3-TP MCC (Micro Commercial Components) MCCProductCatalog.pdf Description: P-CHANNEL MOSFET, DFN3333
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Qualification: AEC-Q101
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
4+94.92 грн
10+60.59 грн
100+40.07 грн
Мінімальне замовлення: 4
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BZT52B9V1BS-TP BZT52B9V1BS-TP MCC (Micro Commercial Components) BZT52B3V0BS-BZT52B51BS(400mW)(SOD-323).pdf Description: DIODE ZENER 9.1V 400MW SOD323
Tolerance: ±2%
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
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DTC124XE-TP DTC124XE-TP MCC (Micro Commercial Components) DTC124XE(SOT-523).pdf Description: DIGITAL TRANSISTOR NPN SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistors Included: R1 Only
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.30 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
DTC124XE-TP DTC124XE-TP MCC (Micro Commercial Components) DTC124XE(SOT-523).pdf Description: DIGITAL TRANSISTOR NPN SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistors Included: R1 Only
на замовлення 5970 шт:
термін постачання 21-31 дні (днів)
20+16.36 грн
33+9.61 грн
100+5.98 грн
500+4.10 грн
1000+3.61 грн
Мінімальне замовлення: 20
В кошику  од. на суму  грн.
MBR2080CT-BP MBR2080CT-BP MCC (Micro Commercial Components) MBR2020CT-MBR20100CT(TO-220AB).pdf Description: DIODE ARR SCHOTT 80V 20A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Reverse Leakage @ Vr: 150 µA @ 80 V
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BC857S-13P BC857S-13P MCC (Micro Commercial Components) BC857S(SOT-363).pdf Description: TRANS 2PNP 45V 200MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-363
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BC857S-TP-HF BC857S-TP-HF MCC (Micro Commercial Components) Description: TRANS 2PNP 45V 200MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-363
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MCACD033N10YLHE3-TP MCACD033N10YLHE3-TP MCC (Micro Commercial Components) MCACD033N10YLHE3(PDFN5060-8D).pdf Description: DUAL N-CHANNEL MOSFET,PDFN5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W (Tj)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PDFN5060-8D
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+25.26 грн
Мінімальне замовлення: 5000
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MCACD033N10YLHE3-TP MCACD033N10YLHE3-TP MCC (Micro Commercial Components) MCACD033N10YLHE3(PDFN5060-8D).pdf Description: DUAL N-CHANNEL MOSFET,PDFN5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W (Tj)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PDFN5060-8D
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
4+101.46 грн
10+62.01 грн
100+41.17 грн
500+30.26 грн
1000+27.56 грн
2000+26.20 грн
Мінімальне замовлення: 4
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PB3506-BP PB3506-BP MCC (Micro Commercial Components) PB35005~PB3510(PB).pdf Description: BRIDGE RECT 1PHASE 600V 35A PB
Packaging: Bulk
Package / Case: 4-ESIP, PB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PB
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MMSZ5238B-13P MMSZ5238B-13P MCC (Micro Commercial Components) MMSZ5221-MMSZ5267(SOD-123).pdf Description: DIODE ZENER 8.7V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
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MMSZ5238BHE3-TP MMSZ5238BHE3-TP MCC (Micro Commercial Components) Description: DIODE ZENER 8.7V 500MW SOD123
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Qualification: AEC-Q101
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SI3134KL3B-TP SI3134KL3B-TP MCC (Micro Commercial Components) SI3134KL3B(DFN1006-3A).pdf Description: N-CHANNEL MOSFET,DFN1006-3A
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V
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SI3134KL3B-TP SI3134KL3B-TP MCC (Micro Commercial Components) SI3134KL3B(DFN1006-3A).pdf Description: N-CHANNEL MOSFET,DFN1006-3A
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V
на замовлення 9900 шт:
термін постачання 21-31 дні (днів)
13+25.37 грн
22+14.58 грн
100+9.11 грн
500+6.32 грн
1000+5.60 грн
2000+4.99 грн
5000+4.25 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SI3134KU6-TP SI3134KU6-TP MCC (Micro Commercial Components) SI3134KU6(DFN1010B-6).pdf Description: MOSFET 2N-CH 20V 0.75A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 420mW (Tj)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1010B-6
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+4.28 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SI3134KU6-TP SI3134KU6-TP MCC (Micro Commercial Components) SI3134KU6(DFN1010B-6).pdf Description: MOSFET 2N-CH 20V 0.75A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 420mW (Tj)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1010B-6
на замовлення 9970 шт:
термін постачання 21-31 дні (днів)
13+26.18 грн
21+15.21 грн
100+9.54 грн
500+6.64 грн
1000+5.70 грн
2000+5.26 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SI3134KS-TP SI3134KS-TP MCC (Micro Commercial Components) SI3134KS(SOT-23).pdf Description: Interface
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Power Dissipation (Max): 350mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V
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SI3134KA-TP SI3134KA-TP MCC (Micro Commercial Components) SI3134KA(SOT-723).pdf Description: MOSFET N-CH 20V 750MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tj)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V
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SI3134KDWA-TPQ2 SI3134KDWA-TPQ2 MCC (Micro Commercial Components) SI3134KDWA(SOT-363).pdf Description: MOSFET 2N-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Tj)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 16V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
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SI3134KDWAS-TP SI3134KDWAS-TP MCC (Micro Commercial Components) Description: DUAL N-CHANNEL MOSFET,SOT-363S
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 260mW (Tj)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 16V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-363S
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MJD45C-TP MJD45C-TP MCC (Micro Commercial Components) Description: MEDIUM POWER BIPOLAR TRANSISTORS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
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MCAC125N04YHE3-TP MCAC125N04YHE3-TP MCC (Micro Commercial Components) MCAC125N04YHE3(DFN5060).pdf Description: MOSFET N-CH 40 125A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 100W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3555 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+53.85 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCAC125N04YHE3-TP MCAC125N04YHE3-TP MCC (Micro Commercial Components) MCAC125N04YHE3(DFN5060).pdf Description: MOSFET N-CH 40 125A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 100W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3555 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
2+190.65 грн
10+117.95 грн
100+80.56 грн
500+60.57 грн
1000+55.74 грн
2000+51.68 грн
Мінімальне замовлення: 2
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SM6S30AHE3-TP SM6S30AHE3-TP MCC (Micro Commercial Components) Description: TVS DIODE
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 95A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 4600W (4.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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ESDSBLC2424P5WFHE3-TP ESDSBLC2424P5WFHE3-TP MCC (Micro Commercial Components) MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf Description: TVS DIODE 24VWM 35VC DFN251010
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN2510-10 (SWF)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 26.5V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 170W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+16.14 грн
Мінімальне замовлення: 3000
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ESDSBLC2424P5WFHE3-TP ESDSBLC2424P5WFHE3-TP MCC (Micro Commercial Components) MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf Description: TVS DIODE 24VWM 35VC DFN251010
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN2510-10 (SWF)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 26.5V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 170W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5750 шт:
термін постачання 21-31 дні (днів)
8+45.82 грн
10+37.11 грн
100+25.80 грн
500+18.79 грн
1000+15.71 грн
Мінімальне замовлення: 8
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2N7002KWS-TP 2N7002KWS-TP MCC (Micro Commercial Components) 2N7002KWS(SOT-323S).pdf Description: N-CHANNEL MOSFET,SOT-323S
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 290mW (Tj)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
3000+3.32 грн
Мінімальне замовлення: 3000
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P5KE110A-BP P5KE5.0-P5KE200A(DO-15).pdf
P5KE110A-BP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 110VWM 177VC DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.8A
Voltage - Reverse Standoff (Typ): 110V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 122V
Voltage - Clamping (Max) @ Ipp: 177V
Power - Peak Pulse: 500W
Power Line Protection: No
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P4KE510A-BP P4KE6.8A~P4KE550A(DO-41).pdf
P4KE510A-BP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 434VWM 698VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 570mA
Voltage - Reverse Standoff (Typ): 434V
Supplier Device Package: DO-41
Unidirectional Channels: 1
Voltage - Breakdown (Min): 485V
Voltage - Clamping (Max) @ Ipp: 698V
Power - Peak Pulse: 400W
Power Line Protection: No
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MURS1060A-BP MURS1060A(TO-220AC).pdf
MURS1060A-BP
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 600V 10A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MURS1040A-BP MURS1040A(TO-220AC).pdf
MURS1040A-BP
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 400V 10A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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MURS1040FA-BP MURS1040FA(ITO-220AC).pdf
MURS1040FA-BP
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 400V 10A ITO220AC
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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MURS1060CTA-BP MURS1060CTA(TO-220AB).pdf
MURS1060CTA-BP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ARRAY GP 600V 10A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MURS1060FA-BP MURS1060FA(ITO-220AC).pdf
MURS1060FA-BP
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 600V 10A ITO220AC
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MURS1040FCTA-BP MURS1040FCTA(ITO-220AB).pdf
MURS1040FCTA-BP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ARRAY GP 400V 10A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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MURS1060FCTA-BP MURS1060FCTA(ITO-220AB).pdf
MURS1060FCTA-BP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ARRAY GP 600V 10A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MCU80N05YHE3-TP MCU80N05YHE3(DPAK).pdf
Виробник: MCC (Micro Commercial Components)
Description: MOSFET
Packaging: Tape & Reel (TR)
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RB520S-40L2-TP RB520S-40L2(DFN1006-2L).pdf
RB520S-40L2-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTT 40V 200MA DFN10062L
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 20pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DFN1006-2L
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 100 mA
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
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MCMNP2065A-TP MCMNP2065A(DFN2020-6L).pdf
MCMNP2065A-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET N/P-CH 20V 6A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 418pF @ 10V, 880pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V, 51mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.65nC @ 4.5V, 5.41nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2020-6L
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MCMNP2065A-TP MCMNP2065A(DFN2020-6L).pdf
MCMNP2065A-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET N/P-CH 20V 6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 4A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 418pF @ 10V, 880pF @ 6V
Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 4.5V, 51mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 7.65nC @ 4.5V, 5.41nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN2020-6L
на замовлення 2375 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+42.55 грн
13+25.21 грн
100+16.07 грн
500+11.35 грн
1000+10.15 грн
Мінімальне замовлення: 8
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CSP522S-30DP-TP CSP522S-30DP(0201-A).pdf
CSP522S-30DP-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 30V 100MA 0201A
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 0201-A
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
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CSP522S-30DP-TP CSP522S-30DP(0201-A).pdf
CSP522S-30DP-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 30V 100MA 0201A
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 15pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 0201-A
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 30 V
на замовлення 330 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
25+13.09 грн
44+7.25 грн
54+5.86 грн
100+4.02 грн
250+3.29 грн
Мінімальне замовлення: 25
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15KP30CAL-TP 15KP17(C)(A)L_15KP280(C)(A)L(R-6).pdf
15KP30CAL-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 30VWM 50.7VC R6
Packaging: Tape & Reel (TR)
Package / Case: R-6, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 296A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: R-6
Bidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 50.7V
Power - Peak Pulse: 15000W (15kW)
Power Line Protection: No
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MCU40P06-TP MCU40P06(DPAK).pdf
MCU40P06-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 104W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1533 pF @ 25 V
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MCU40P06Y-TP MCU40P06Y(DPAK).pdf
MCU40P06Y-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 20A, 10V
Power Dissipation (Max): 83W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1491 pF @ 25 V
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MIW50N65AH2Y-BP MIW50N65AH2Y(TO-247AB).PDF
MIW50N65AH2Y-BP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 80A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 148 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 24ns/74ns
Switching Energy: 2.05mJ (on), 360µJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 283 W
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SMBJ70CAQ-TP SMBJ5.0AQ_SMBJ190CAQ(SMB).pdf
SMBJ70CAQ-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 70VWM 113VC DO214AA
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 5.3A
Voltage - Reverse Standoff (Typ): 70V
Supplier Device Package: DO-214AA (SMB)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 77.8V
Voltage - Clamping (Max) @ Ipp: 113V
Power - Peak Pulse: 600W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MSJL120N60FH-TP MSJL120N60FH(DFN8080A).pdf
MSJL120N60FH-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN8080A
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 15.3A, 10V
Power Dissipation (Max): 266W (Tj)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: DFN8080A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+126.40 грн
Мінімальне замовлення: 3000
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MSJL120N60FH-TP MSJL120N60FH(DFN8080A).pdf
MSJL120N60FH-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN8080A
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 15.3A, 10V
Power Dissipation (Max): 266W (Tj)
Vgs(th) (Max) @ Id: 5V @ 2.1mA
Supplier Device Package: DFN8080A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 100 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+346.12 грн
10+221.17 грн
100+157.51 грн
500+139.82 грн
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SK36B-TP SK32B-SK310B(HSMB).PDF
SK36B-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTT 60V 3A DO214AA HSMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AA, HSMB
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
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MCAC105P15YL-TP MCAC105P15YL(DFN5060).pdf
MCAC105P15YL-TP
Виробник: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET,DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 15A, 10V
Power Dissipation (Max): 189W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 49.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3335 pF @ 75 V
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MCTK099N60SH-TP
MCTK099N60SH-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.5A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15.3A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.1mA
Supplier Device Package: TOLL-8L-KS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2224 pF @ 100 V
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MCTK099N60SH-TP
MCTK099N60SH-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TOLL-8L-KS
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.5A (Tc)
Rds On (Max) @ Id, Vgs: 99mOhm @ 15.3A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 2.1mA
Supplier Device Package: TOLL-8L-KS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 56.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2224 pF @ 100 V
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SA16A-BP SA5.0(C)(A)-SA170(C)(A)(DO-15).pdf
SA16A-BP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 16VWM 26VC DO15
Packaging: Bulk
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 19.6A
Voltage - Reverse Standoff (Typ): 16V
Supplier Device Package: DO-15
Unidirectional Channels: 1
Voltage - Breakdown (Min): 17.8V
Voltage - Clamping (Max) @ Ipp: 26V
Power - Peak Pulse: 500W
Power Line Protection: No
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ESDSLC18VD3B-TP ESDSLC18VD3B(SOD-323).pdf
ESDSLC18VD3B-TP
Виробник: MCC (Micro Commercial Components)
Description: ESD,18V,SOD-323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 18V (Max)
Supplier Device Package: SOD-323
Bidirectional Channels: 1
Voltage - Breakdown (Min): 19.8V
Voltage - Clamping (Max) @ Ipp: 45V
Power - Peak Pulse: 350W
Power Line Protection: No
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GBU5010-BP GBU5010(GBU).pdf
GBU5010-BP
Виробник: MCC (Micro Commercial Components)
Description: BRIDGE RECT 1PHASE 1KV 50A GBU
Packaging: Tube
Package / Case: 4-SIP, GBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 50 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 25 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 1953 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3+126.01 грн
10+82.65 грн
100+61.13 грн
500+47.97 грн
1000+43.97 грн
Мінімальне замовлення: 3
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ESDSBSLC3V3AE2-TP ESDSBSLC3V3AE2(0201-A).pdf
ESDSBSLC3V3AE2-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 3.3VWM 8.5VC 0201A
Packaging: Bulk
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.35pF @ 1MHz
Current - Peak Pulse (10/1000µs): 4A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 0201-A
Unidirectional Channels: 2
Voltage - Breakdown (Min): 7V
Voltage - Clamping (Max) @ Ipp: 8.5V
Power - Peak Pulse: 34W
Power Line Protection: Yes
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MCTL1D4N04YL-TP MCTL1D4N04YL(TOLL-8).PDF
MCTL1D4N04YL-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TOLL-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 113W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 20 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2000+58.78 грн
Мінімальне замовлення: 2000
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MCTL1D4N04YL-TP MCTL1D4N04YL(TOLL-8).PDF
MCTL1D4N04YL-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,TOLL-8L
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 210A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 113W (Tj)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6140 pF @ 20 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+191.47 грн
10+119.06 грн
100+81.91 грн
500+62.71 грн
Мінімальне замовлення: 2
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MCG15P10YHE3-TP MCCProductCatalog.pdf
MCG15P10YHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET, DFN3333
Packaging: Tape & Reel (TR)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Qualification: AEC-Q101
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MCG15P10YHE3-TP MCCProductCatalog.pdf
MCG15P10YHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: P-CHANNEL MOSFET, DFN3333
Packaging: Cut Tape (CT)
Package / Case: 8-VDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 10A, 10V
Power Dissipation (Max): 50W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V
Qualification: AEC-Q101
на замовлення 270 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+94.92 грн
10+60.59 грн
100+40.07 грн
Мінімальне замовлення: 4
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BZT52B9V1BS-TP BZT52B3V0BS-BZT52B51BS(400mW)(SOD-323).pdf
BZT52B9V1BS-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ZENER 9.1V 400MW SOD323
Tolerance: ±2%
Packaging: Bulk
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-323
Power - Max: 400 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 6 V
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DTC124XE-TP DTC124XE(SOT-523).pdf
DTC124XE-TP
Виробник: MCC (Micro Commercial Components)
Description: DIGITAL TRANSISTOR NPN SOT-523
Packaging: Tape & Reel (TR)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistors Included: R1 Only
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.30 грн
Мінімальне замовлення: 3000
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DTC124XE-TP DTC124XE(SOT-523).pdf
DTC124XE-TP
Виробник: MCC (Micro Commercial Components)
Description: DIGITAL TRANSISTOR NPN SOT-523
Packaging: Cut Tape (CT)
Package / Case: SOT-523
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Supplier Device Package: SOT-523
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 150 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 22 kOhms
Resistors Included: R1 Only
на замовлення 5970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
20+16.36 грн
33+9.61 грн
100+5.98 грн
500+4.10 грн
1000+3.61 грн
Мінімальне замовлення: 20
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MBR2080CT-BP MBR2020CT-MBR20100CT(TO-220AB).pdf
MBR2080CT-BP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ARR SCHOTT 80V 20A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 20A
Supplier Device Package: TO-220AB
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Reverse Leakage @ Vr: 150 µA @ 80 V
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BC857S-13P BC857S(SOT-363).pdf
BC857S-13P
Виробник: MCC (Micro Commercial Components)
Description: TRANS 2PNP 45V 200MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-363
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BC857S-TP-HF
BC857S-TP-HF
Виробник: MCC (Micro Commercial Components)
Description: TRANS 2PNP 45V 200MA SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 300mW
Current - Collector (Ic) (Max): 200mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-363
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MCACD033N10YLHE3-TP MCACD033N10YLHE3(PDFN5060-8D).pdf
MCACD033N10YLHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: DUAL N-CHANNEL MOSFET,PDFN5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W (Tj)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PDFN5060-8D
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+25.26 грн
Мінімальне замовлення: 5000
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MCACD033N10YLHE3-TP MCACD033N10YLHE3(PDFN5060-8D).pdf
MCACD033N10YLHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: DUAL N-CHANNEL MOSFET,PDFN5060-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 41W (Tj)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 33mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PDFN5060-8D
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
4+101.46 грн
10+62.01 грн
100+41.17 грн
500+30.26 грн
1000+27.56 грн
2000+26.20 грн
Мінімальне замовлення: 4
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PB3506-BP PB35005~PB3510(PB).pdf
PB3506-BP
Виробник: MCC (Micro Commercial Components)
Description: BRIDGE RECT 1PHASE 600V 35A PB
Packaging: Bulk
Package / Case: 4-ESIP, PB
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: PB
Voltage - Peak Reverse (Max): 600 V
Current - Average Rectified (Io): 35 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 17.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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MMSZ5238B-13P MMSZ5221-MMSZ5267(SOD-123).pdf
MMSZ5238B-13P
Виробник: MCC (Micro Commercial Components)
Description: DIODE ZENER 8.7V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
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MMSZ5238BHE3-TP
MMSZ5238BHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ZENER 8.7V 500MW SOD123
Tolerance: ±5%
Packaging: Bulk
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 8.7 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: SOD-123
Grade: Automotive
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6.5 V
Qualification: AEC-Q101
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SI3134KL3B-TP SI3134KL3B(DFN1006-3A).pdf
SI3134KL3B-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN1006-3A
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V
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SI3134KL3B-TP SI3134KL3B(DFN1006-3A).pdf
SI3134KL3B-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,DFN1006-3A
Packaging: Cut Tape (CT)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW (Tj)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V
на замовлення 9900 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+25.37 грн
22+14.58 грн
100+9.11 грн
500+6.32 грн
1000+5.60 грн
2000+4.99 грн
5000+4.25 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SI3134KU6-TP SI3134KU6(DFN1010B-6).pdf
SI3134KU6-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 20V 0.75A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 420mW (Tj)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1010B-6
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+4.28 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
SI3134KU6-TP SI3134KU6(DFN1010B-6).pdf
SI3134KU6-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 20V 0.75A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 420mW (Tj)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V
Rds On (Max) @ Id, Vgs: 250mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1010B-6
на замовлення 9970 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
13+26.18 грн
21+15.21 грн
100+9.54 грн
500+6.64 грн
1000+5.70 грн
2000+5.26 грн
Мінімальне замовлення: 13
В кошику  од. на суму  грн.
SI3134KS-TP SI3134KS(SOT-23).pdf
SI3134KS-TP
Виробник: MCC (Micro Commercial Components)
Description: Interface
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Power Dissipation (Max): 350mW
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V
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SI3134KA-TP SI3134KA(SOT-723).pdf
SI3134KA-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 20V 750MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tj)
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 16 V
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SI3134KDWA-TPQ2 SI3134KDWA(SOT-363).pdf
SI3134KDWA-TPQ2
Виробник: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 20V 0.75A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 370mW (Tj)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 16V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
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SI3134KDWAS-TP
SI3134KDWAS-TP
Виробник: MCC (Micro Commercial Components)
Description: DUAL N-CHANNEL MOSFET,SOT-363S
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 260mW (Tj)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 28pF @ 16V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 10V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-363S
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MJD45C-TP
MJD45C-TP
Виробник: MCC (Micro Commercial Components)
Description: MEDIUM POWER BIPOLAR TRANSISTORS
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Supplier Device Package: TO-252 (DPAK)
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.25 W
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MCAC125N04YHE3-TP MCAC125N04YHE3(DFN5060).pdf
MCAC125N04YHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 40 125A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 100W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3555 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+53.85 грн
Мінімальне замовлення: 5000
В кошику  од. на суму  грн.
MCAC125N04YHE3-TP MCAC125N04YHE3(DFN5060).pdf
MCAC125N04YHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 40 125A DFN5060
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 125A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 100W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3555 pF @ 25 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2+190.65 грн
10+117.95 грн
100+80.56 грн
500+60.57 грн
1000+55.74 грн
2000+51.68 грн
Мінімальне замовлення: 2
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SM6S30AHE3-TP
SM6S30AHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 95A
Voltage - Reverse Standoff (Typ): 30V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33.3V
Voltage - Clamping (Max) @ Ipp: 48.4V
Power - Peak Pulse: 4600W (4.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
товару немає в наявності
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ESDSBLC2424P5WFHE3-TP MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf
ESDSBLC2424P5WFHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 24VWM 35VC DFN251010
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN2510-10 (SWF)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 26.5V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 170W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+16.14 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
ESDSBLC2424P5WFHE3-TP MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf
ESDSBLC2424P5WFHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 24VWM 35VC DFN251010
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount, Wettable Flank
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Max)
Supplier Device Package: DFN2510-10 (SWF)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 26.5V
Voltage - Clamping (Max) @ Ipp: 35V
Power - Peak Pulse: 170W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5750 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
8+45.82 грн
10+37.11 грн
100+25.80 грн
500+18.79 грн
1000+15.71 грн
Мінімальне замовлення: 8
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2N7002KWS-TP 2N7002KWS(SOT-323S).pdf
2N7002KWS-TP
Виробник: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-323S
Packaging: Tape & Reel (TR)
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 25 V
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 290mW (Tj)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-323S
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+3.32 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
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