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MMDT4413-TP MMDT4413-TP MCC (Micro Commercial Components) MMDT4413(SOT-363).pdf Description: TRANS NPN/PNP 40V 600MA SOT-363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz, 200MHz
Supplier Device Package: SOT-363
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SM8S36AHE3-TP SM8S36AHE3-TP MCC (Micro Commercial Components) SM8S10(C)AHE3_SM8S85(C)AHE3(DO-218AB).pdf Description: TVS DIODE 36VWM 58.1VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 114A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJP4KE100CA-TP SMAJP4KE100CA-TP MCC (Micro Commercial Components) SMAJP4KE6.8(C)A-SMAJP4KE550(C)A(DO-214AC).pdf Description: TVS DIODE 85.5VWM 137V DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-214AC (SMAJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE100CA-TP P4KE100CA-TP MCC (Micro Commercial Components) P4KE6.8A_P4KE550A(DO-41).pdf Description: TVS DIODE 85.5VWM 137VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 400W
Power Line Protection: No
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MURS540A-BP MURS540A-BP MCC (Micro Commercial Components) MURS540A(TO-220AC).pdf Description: DIODE STANDARD 400V 5A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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MURS540FA-BP MURS540FA-BP MCC (Micro Commercial Components) MURS540FA(ITO-220AC).pdf Description: DIODE STANDARD 400V 5A ITO220AC
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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ESD15VT2BHE3-TP ESD15VT2BHE3-TP MCC (Micro Commercial Components) ESD15VT2BHE3(SOT-23).pdf Description: TVS DIODE 15VWM 30VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SOT-23
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 270W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5716 шт:
термін постачання 21-31 дні (днів)
18+19.31 грн
36+9.14 грн
100+5.52 грн
500+4.52 грн
1000+4.00 грн
Мінімальне замовлення: 18
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PXT8550-B-TP PXT8550-B-TP MCC (Micro Commercial Components) PXT8550(SOT-89).pdf Description: TRANS PNP 25V 1.5A SOT-89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
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KTA1267-O-AP KTA1267-O-AP MCC (Micro Commercial Components) KTA1267%28TO-92S%29-V1.pdf Description: TRANS PNP 50V 0.15A TO-92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
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KTA1267-GR-BP KTA1267-GR-BP MCC (Micro Commercial Components) KTA1267%28TO-92S%29-V1.pdf Description: TRANS PNP 50V 0.15A TO-92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
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KTA1267-Y-AP KTA1267-Y-AP MCC (Micro Commercial Components) KTA1267%28TO-92S%29-V1.pdf Description: TRANS PNP 50V 0.15A TO-92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
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KTA1267-Y-BP KTA1267-Y-BP MCC (Micro Commercial Components) KTA1267%28TO-92S%29-V1.pdf Description: TRANS PNP 50V 0.15A TO-92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
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KTA1267-O-BP KTA1267-O-BP MCC (Micro Commercial Components) KTA1267%28TO-92S%29-V1.pdf Description: TRANS PNP 50V 0.15A TO-92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
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KTA1267-GR-AP KTA1267-GR-AP MCC (Micro Commercial Components) KTA1267%28TO-92S%29-V1.pdf Description: TRANS PNP 50V 0.15A TO-92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
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SMCJ1.5KE43AQ-TP SMCJ1.5KE43AQ-TP MCC (Micro Commercial Components) SMCJ1.5KE6.8AQ_SMCJ1.5KE220CAQ(SMC).pdf Description: TVS DIODE 36.8VWM 59.3V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 25.3A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.85V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MMBT2907A-13P MMBT2907A-13P MCC (Micro Commercial Components) MMBT2907A(SOT-23).pdf Description: TRANS PNP 60V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
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MCACD60N06Y-TP MCACD60N06Y-TP MCC (Micro Commercial Components) MCACD60N06Y(PDFN5060-8D).pdf Description: MOSFET 2N-CH 60V 60A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tj)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 30V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PDFN5060-8D
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
5000+55.76 грн
Мінімальне замовлення: 5000
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MCGWF60N06YHE3-TP MCGWF60N06YHE3-TP MCC (Micro Commercial Components) MCGWF60N06YHE3(DFN3333-8(SWF)).pdf Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
5000+71.62 грн
Мінімальне замовлення: 5000
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MCAC160N06Y-TP MCAC160N06Y-TP MCC (Micro Commercial Components) MCAC160N06Y(DFN5060).pdf Description: MOSFET N-CH 60 160A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3586 pF @ 20 V
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MCAC160N06YHE3-TP MCAC160N06YHE3-TP MCC (Micro Commercial Components) MCAC160N06YHE3(DFN5060).pdf Description: MOSFET N-CH 60 160A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3586 pF @ 20 V
Qualification: AEC-Q101
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MBRB30100CTQ-TP MBRB30100CTQ-TP MCC (Micro Commercial Components) MBRB30100CTQ(D2-PAK).pdf Description: DIODE ARRAY SCHOT 100V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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MMBD4148TU-TP MMBD4148TU-TP MCC (Micro Commercial Components) MMBD4148TU(SOT23-6L).pdf Description: DIODE ARRAY GP 75V 80MA SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SOT-23-6L
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 855 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
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MCACL170N08Y-TP MCACL170N08Y-TP MCC (Micro Commercial Components) MCACL170N08Y(DFN5060).pdf Description: MOSFET N-CH 80 170A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 208W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6452 pF @ 40 V
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BSS84KHE3-TP BSS84KHE3-TP MCC (Micro Commercial Components) BSS84KHE3(SOT-23).pdf Description: SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 400mA, 10V
Power Dissipation (Max): 960mW (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 25 V
Qualification: AEC-Q101
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BCX56-TPQ4 BCX56-TPQ4 MCC (Micro Commercial Components) BCX56(SOT-89).pdf Description: MEDIUM POWER BIPOLAR TRANSISTOR
Packaging: Tape & Reel (TR)
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MIW60N65AS2Y-BP MIW60N65AS2Y-BP MCC (Micro Commercial Components) MIW60N65AS2Y(TO-247AB).pdf Description: IGBT TRENCH FS 650V 80A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 155 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/81ns
Switching Energy: 2.47mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 283 W
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MIF15N65AT0Y-BP MIF15N65AT0Y-BP MCC (Micro Commercial Components) MIF15N65AT0Y(ITO-220AB).pdf Description: IGBT TRENCH FS 650V 20A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 197 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: ITO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 330µJ (on), 160µJ (off)
Test Condition: 300V, 15A, 51Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 34 W
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MIP15N65AT0Y-BP MIP15N65AT0Y-BP MCC (Micro Commercial Components) MIP15N65AT0Y(TO-220AB).pdf Description: IGBT TRENCH FS 650V 30A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 197 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: TO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 330µJ (on), 160µJ (off)
Test Condition: 300V, 15A, 51Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
товару немає в наявності
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MIB15N65AT0Y-TP MIB15N65AT0Y-TP MCC (Micro Commercial Components) MIB15N65AT0Y(D2-PAK).pdf Description: IGBT TRENCH FS 650V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 197 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 330µJ (on), 160µJ (off)
Test Condition: 300V, 15A, 51Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
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MIP20N65AT0Y-BP MIP20N65AT0Y-BP MCC (Micro Commercial Components) MIP20N65AT0Y(TO-220AB).pdf Description: IGBT TRENCH FS 650V 40A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A
Supplier Device Package: TO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/68ns
Switching Energy: 410µJ (on), 220µJ (off)
Test Condition: 300V, 20A, 51Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 120 W
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MIF20N65AT0Y-BP MIF20N65AT0Y-BP MCC (Micro Commercial Components) MIF20N65AT0Y(ITO-220AB).pdf Description: IGBT TRENCH FS 650V 25A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A
Supplier Device Package: ITO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/68ns
Switching Energy: 410µJ (on), 220µJ (off)
Test Condition: 300V, 20A, 51Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 37 W
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UMD9N-13P UMD9N-13P MCC (Micro Commercial Components) UMD9N(SOT-363).pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-363
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UMD3NHE3-TP UMD3NHE3-TP MCC (Micro Commercial Components) UMD3NHE3(SOT-363).pdf Description: TRANS PREBIAS 1NPN 1PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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FMMT591B-TP FMMT591B-TP MCC (Micro Commercial Components) FMMT591B(SOT-23).pdf Description: TRANS PNP 40V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
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FMMT591BHE3-TP FMMT591BHE3-TP MCC (Micro Commercial Components) FMMT591BHE3(SOT-23).pdf Description: TRANS PNP 40V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Qualification: AEC-Q101
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FMMT591HE3-TP FMMT591HE3-TP MCC (Micro Commercial Components) FMMT591HE3(SOT-23).pdf Description: TRANS PNP 60V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
Qualification: AEC-Q101
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MIW75N65AH2Y-BP MIW75N65AH2Y-BP MCC (Micro Commercial Components) MIW75N65AH2Y(TO-247AB).pdf Description: IGBT TRENCH FS 650V 85A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/143ns
Switching Energy: 3.26mJ (on), 840µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 170 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 428 W
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MIW85N65AS2Y-BP MIW85N65AS2Y-BP MCC (Micro Commercial Components) Description: IGBT TRENCH FS 650V 85A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 175 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 85A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/116ns
Switching Energy: 3.67mJ (on), 1.26mJ (off)
Test Condition: 400V, 85A, 10Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 320 A
Power - Max: 428 W
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MIW75N65AS2Y-BP MIW75N65AS2Y-BP MCC (Micro Commercial Components) MIW75N65AS2Y(TO-247AB).pdf Description: IGBT TRENCH FS 650V 85A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/121ns
Switching Energy: 3.12mJ (on), 1.11mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 428 W
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1N5416GP-AP 1N5416GP-AP MCC (Micro Commercial Components) 1N5416GP(DO-201AD).pdf Description: DIODE STANDARD 1600V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
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1N5416GP-TP 1N5416GP-TP MCC (Micro Commercial Components) 1N5416GP(DO-201AD).pdf Description: DIODE STANDARD 1600V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
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SL26HL-TP SL26HL-TP MCC (Micro Commercial Components) SL24HL_SL210HL(SOD-123HL).pdf Description: DIODE SCHOTTKY 60V 2A SOD123HL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+5.65 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
MIF10N65AT0Y-BP MIF10N65AT0Y-BP MCC (Micro Commercial Components) MIF10N65AT0Y(ITO-220AB).pdf Description: IGBT TRENCH FS 650V 15A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 176 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A
Supplier Device Package: ITO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 360µJ (on), 170µJ (off)
Test Condition: 300V, 10A, 51Ohm, 15V
Gate Charge: 59 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 31 W
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MIB10N65AT0Y-TP MIB10N65AT0Y-TP MCC (Micro Commercial Components) MIB10N65AT0Y(D2-PAK).pdf Description: IGBT TRENCH FS 650V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 176 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 360µJ (on), 170µJ (off)
Test Condition: 300V, 10A, 51Ohm, 15V
Gate Charge: 59 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
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UF4007GP-AP-HF UF4007GP-AP-HF MCC (Micro Commercial Components) UF4001GP_UF4007GP(DO-41).pdf Description: DIODE STANDARD 1000V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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SIC1060PL8-TP SIC1060PL8-TP MCC (Micro Commercial Components) SIC1060PL8(DFN8080A).pdf Description: DIODE SIL CARB 650V 10A DFN8080A
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 452pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DFN8080A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
3000+193.16 грн
Мінімальне замовлення: 3000
В кошику  од. на суму  грн.
SIC1060PL8-TP SIC1060PL8-TP MCC (Micro Commercial Components) SIC1060PL8(DFN8080A).pdf Description: DIODE SIL CARB 650V 10A DFN8080A
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 452pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DFN8080A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
1+491.27 грн
10+317.57 грн
100+229.21 грн
500+179.74 грн
1000+174.56 грн
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SK54AFLQ-TP SK54AFLQ-TP MCC (Micro Commercial Components) SK54AFLQ_SK56AFLQ(DO-221AC).pdf Description: DIODE SCHOTTKY 40V 5A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 265pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
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MCACD60N04YHE3-TP MCACD60N04YHE3-TP MCC (Micro Commercial Components) MCACD60N04YHE3(PDFN5060-8D).pdf Description: MOSFET 2N-CH 40V 60A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tj)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PDFN5060-8D
Grade: Automotive
Qualification: AEC-Q101
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1N4007GP-AP-HF 1N4007GP-AP-HF MCC (Micro Commercial Components) 1N4001GP_1N4007GP(DO-41).pdf Description: DIODE STANDARD 1000V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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MCW240N10Y-BP MCW240N10Y-BP MCC (Micro Commercial Components) MCW240N10Y(TO-247).pdf Description: POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V
Power Dissipation (Max): 312.5W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16232 pF @ 50 V
на замовлення 152 шт:
термін постачання 21-31 дні (днів)
1+351.87 грн
10+224.41 грн
100+159.47 грн
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SMAJ15CAV-TP MCC (Micro Commercial Components) MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf Description: TVS
Packaging: Tape & Reel (TR)
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GS1MHL-TP GS1MHL-TP MCC (Micro Commercial Components) GS1MHL(SOD-123HL).pdf Description: DIODE STANDARD 1000V 1A SOD123HL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+3.38 грн
Мінімальне замовлення: 2500
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SMBJP6KE15CAV-TP MCC (Micro Commercial Components) MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf Description: TVS
Packaging: Tape & Reel (TR)
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SS14FLQ-TP SS14FLQ-TP MCC (Micro Commercial Components) SS14FLQ_SS16FLQ(DO-221AC).pdf Description: DIODE SCHOTTKY 40V 1A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
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BZT52C12HE3-TP-A001 BZT52C12HE3-TP-A001 MCC (Micro Commercial Components) Description: ZENER DIODE
Packaging: Tape & Reel (TR)
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SS210FLQ-TP SS210FLQ-TP MCC (Micro Commercial Components) SS210FLQ_SS220FLQ(DO-221AC).pdf Description: DIODE SCHOTTKY 100V 2A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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SMCJ1.5KE36CAV-TP MCC (Micro Commercial Components) MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf Description: TVS
Packaging: Tape & Reel (TR)
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ES2DHL-TP ES2DHL-TP MCC (Micro Commercial Components) ES2DHL_ES2JHL(SOD-123HL).pdf Description: DIODE STANDARD 200V 2A SOD123HL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
2500+3.98 грн
Мінімальне замовлення: 2500
В кошику  од. на суму  грн.
SMH80A-TP SMH80A-TP MCC (Micro Commercial Components) SMH5.0A_SMH100A(SOD-123HL).pdf Description: TVS DIODE 80VWM 129VC SOD123HL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.55A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: SOD-123HL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.8V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 200W
Power Line Protection: No
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MMDT4413-TP MMDT4413(SOT-363).pdf
MMDT4413-TP
Виробник: MCC (Micro Commercial Components)
Description: TRANS NPN/PNP 40V 600MA SOT-363
Packaging: Bulk
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 200mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Frequency - Transition: 250MHz, 200MHz
Supplier Device Package: SOT-363
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SM8S36AHE3-TP SM8S10(C)AHE3_SM8S85(C)AHE3(DO-218AB).pdf
SM8S36AHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 36VWM 58.1VC DO218AB
Packaging: Tape & Reel (TR)
Package / Case: DO-218AB
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 114A
Voltage - Reverse Standoff (Typ): 36V
Supplier Device Package: DO-218AB
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40V
Voltage - Clamping (Max) @ Ipp: 58.1V
Power - Peak Pulse: 6600W (6.6kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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SMAJP4KE100CA-TP SMAJP4KE6.8(C)A-SMAJP4KE550(C)A(DO-214AC).pdf
SMAJP4KE100CA-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 85.5VWM 137V DO214AC
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-214AC (SMAJ)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 400W
Power Line Protection: No
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P4KE100CA-TP P4KE6.8A_P4KE550A(DO-41).pdf
P4KE100CA-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 85.5VWM 137VC DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 85.5V
Supplier Device Package: DO-41
Bidirectional Channels: 1
Voltage - Breakdown (Min): 95V
Voltage - Clamping (Max) @ Ipp: 137V
Power - Peak Pulse: 400W
Power Line Protection: No
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MURS540A-BP MURS540A(TO-220AC).pdf
MURS540A-BP
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 400V 5A TO220AC
Packaging: Bulk
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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MURS540FA-BP MURS540FA(ITO-220AC).pdf
MURS540FA-BP
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 400V 5A ITO220AC
Packaging: Bulk
Package / Case: TO-220-2 Isolated Tab
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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ESD15VT2BHE3-TP ESD15VT2BHE3(SOT-23).pdf
ESD15VT2BHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 15VWM 30VC SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 26pF @ 1MHz
Current - Peak Pulse (10/1000µs): 9A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SOT-23
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16V
Voltage - Clamping (Max) @ Ipp: 30V
Power - Peak Pulse: 270W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
на замовлення 5716 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
18+19.31 грн
36+9.14 грн
100+5.52 грн
500+4.52 грн
1000+4.00 грн
Мінімальне замовлення: 18
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PXT8550-B-TP PXT8550(SOT-89).pdf
PXT8550-B-TP
Виробник: MCC (Micro Commercial Components)
Description: TRANS PNP 25V 1.5A SOT-89
Packaging: Bulk
Package / Case: TO-243AA
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 500mV @ 80mA, 800mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-89
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
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KTA1267-O-AP KTA1267%28TO-92S%29-V1.pdf
KTA1267-O-AP
Виробник: MCC (Micro Commercial Components)
Description: TRANS PNP 50V 0.15A TO-92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
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KTA1267-GR-BP KTA1267%28TO-92S%29-V1.pdf
KTA1267-GR-BP
Виробник: MCC (Micro Commercial Components)
Description: TRANS PNP 50V 0.15A TO-92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
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KTA1267-Y-AP KTA1267%28TO-92S%29-V1.pdf
KTA1267-Y-AP
Виробник: MCC (Micro Commercial Components)
Description: TRANS PNP 50V 0.15A TO-92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
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KTA1267-Y-BP KTA1267%28TO-92S%29-V1.pdf
KTA1267-Y-BP
Виробник: MCC (Micro Commercial Components)
Description: TRANS PNP 50V 0.15A TO-92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
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KTA1267-O-BP KTA1267%28TO-92S%29-V1.pdf
KTA1267-O-BP
Виробник: MCC (Micro Commercial Components)
Description: TRANS PNP 50V 0.15A TO-92S
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Short Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
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KTA1267-GR-AP KTA1267%28TO-92S%29-V1.pdf
KTA1267-GR-AP
Виробник: MCC (Micro Commercial Components)
Description: TRANS PNP 50V 0.15A TO-92S
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Short Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92S
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
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SMCJ1.5KE43AQ-TP SMCJ1.5KE6.8AQ_SMCJ1.5KE220CAQ(SMC).pdf
SMCJ1.5KE43AQ-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 36.8VWM 59.3V DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Current - Peak Pulse (10/1000µs): 25.3A
Voltage - Reverse Standoff (Typ): 36.8V
Supplier Device Package: DO-214AB (SMC)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 40.85V
Voltage - Clamping (Max) @ Ipp: 59.3V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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MMBT2907A-13P MMBT2907A(SOT-23).pdf
MMBT2907A-13P
Виробник: MCC (Micro Commercial Components)
Description: TRANS PNP 60V 0.6A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
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MCACD60N06Y-TP MCACD60N06Y(PDFN5060-8D).pdf
MCACD60N06Y-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 60V 60A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tj)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1740pF @ 30V
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 34.5nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PDFN5060-8D
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+55.76 грн
Мінімальне замовлення: 5000
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MCGWF60N06YHE3-TP MCGWF60N06YHE3(DFN3333-8(SWF)).pdf
MCGWF60N06YHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: POWER MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V
Power Dissipation (Max): 60W (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 34.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1666 pF @ 30 V
Qualification: AEC-Q101
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
5000+71.62 грн
Мінімальне замовлення: 5000
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MCAC160N06Y-TP MCAC160N06Y(DFN5060).pdf
MCAC160N06Y-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 60 160A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3586 pF @ 20 V
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MCAC160N06YHE3-TP MCAC160N06YHE3(DFN5060).pdf
MCAC160N06YHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 60 160A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3586 pF @ 20 V
Qualification: AEC-Q101
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MBRB30100CTQ-TP MBRB30100CTQ(D2-PAK).pdf
MBRB30100CTQ-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ARRAY SCHOT 100V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 15 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Qualification: AEC-Q101
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MMBD4148TU-TP MMBD4148TU(SOT23-6L).pdf
MMBD4148TU-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE ARRAY GP 75V 80MA SOT23-6L
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 3 Independent
Current - Average Rectified (Io) (per Diode): 80mA
Supplier Device Package: SOT-23-6L
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 855 mV @ 10 mA
Current - Reverse Leakage @ Vr: 1 µA @ 70 V
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MCACL170N08Y-TP MCACL170N08Y(DFN5060).pdf
MCACL170N08Y-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET N-CH 80 170A DFN5060
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Power Dissipation (Max): 208W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6452 pF @ 40 V
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BSS84KHE3-TP BSS84KHE3(SOT-23).pdf
BSS84KHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: SMALL SIGNAL MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 2.9Ohm @ 400mA, 10V
Power Dissipation (Max): 960mW (Tj)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 33 pF @ 25 V
Qualification: AEC-Q101
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BCX56-TPQ4 BCX56(SOT-89).pdf
BCX56-TPQ4
Виробник: MCC (Micro Commercial Components)
Description: MEDIUM POWER BIPOLAR TRANSISTOR
Packaging: Tape & Reel (TR)
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MIW60N65AS2Y-BP MIW60N65AS2Y(TO-247AB).pdf
MIW60N65AS2Y-BP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 80A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 155 ns
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 60A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 27ns/81ns
Switching Energy: 2.47mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 10Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 240 A
Power - Max: 283 W
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MIF15N65AT0Y-BP MIF15N65AT0Y(ITO-220AB).pdf
MIF15N65AT0Y-BP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 20A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 197 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: ITO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 330µJ (on), 160µJ (off)
Test Condition: 300V, 15A, 51Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 34 W
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MIP15N65AT0Y-BP MIP15N65AT0Y(TO-220AB).pdf
MIP15N65AT0Y-BP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 30A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 197 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: TO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 330µJ (on), 160µJ (off)
Test Condition: 300V, 15A, 51Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
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MIB15N65AT0Y-TP MIB15N65AT0Y(D2-PAK).pdf
MIB15N65AT0Y-TP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 30A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 197 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 15A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 330µJ (on), 160µJ (off)
Test Condition: 300V, 15A, 51Ohm, 15V
Gate Charge: 69 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 110 W
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MIP20N65AT0Y-BP MIP20N65AT0Y(TO-220AB).pdf
MIP20N65AT0Y-BP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 40A TO-220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A
Supplier Device Package: TO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/68ns
Switching Energy: 410µJ (on), 220µJ (off)
Test Condition: 300V, 20A, 51Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 120 W
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MIF20N65AT0Y-BP MIF20N65AT0Y(ITO-220AB).pdf
MIF20N65AT0Y-BP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 25A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 20A
Supplier Device Package: ITO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 12ns/68ns
Switching Energy: 410µJ (on), 220µJ (off)
Test Condition: 300V, 20A, 51Ohm, 15V
Gate Charge: 85 nC
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 37 W
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UMD9N-13P UMD9N(SOT-363).pdf
UMD9N-13P
Виробник: MCC (Micro Commercial Components)
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 150mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-363
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UMD3NHE3-TP UMD3NHE3(SOT-363).pdf
UMD3NHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: TRANS PREBIAS 1NPN 1PNP SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased
Power - Max: 200mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 250MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-363
Grade: Automotive
Qualification: AEC-Q101
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FMMT591B-TP FMMT591B(SOT-23).pdf
FMMT591B-TP
Виробник: MCC (Micro Commercial Components)
Description: TRANS PNP 40V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
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FMMT591BHE3-TP FMMT591BHE3(SOT-23).pdf
FMMT591BHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: TRANS PNP 40V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 100mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Qualification: AEC-Q101
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FMMT591HE3-TP FMMT591HE3(SOT-23).pdf
FMMT591HE3-TP
Виробник: MCC (Micro Commercial Components)
Description: TRANS PNP 60V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23
Grade: Automotive
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 300 mW
Qualification: AEC-Q101
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MIW75N65AH2Y-BP MIW75N65AH2Y(TO-247AB).pdf
MIW75N65AH2Y-BP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 85A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/143ns
Switching Energy: 3.26mJ (on), 840µJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 170 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 428 W
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MIW85N65AS2Y-BP
MIW85N65AS2Y-BP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 85A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 175 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 85A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 33ns/116ns
Switching Energy: 3.67mJ (on), 1.26mJ (off)
Test Condition: 400V, 85A, 10Ohm, 15V
Gate Charge: 220 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 320 A
Power - Max: 428 W
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MIW75N65AS2Y-BP MIW75N65AS2Y(TO-247AB).pdf
MIW75N65AS2Y-BP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 85A TO-247AB
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 1.75V @ 15V, 75A
Supplier Device Package: TO-247AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/121ns
Switching Energy: 3.12mJ (on), 1.11mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 180 nC
Current - Collector (Ic) (Max): 85 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 428 W
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1N5416GP-AP 1N5416GP(DO-201AD).pdf
1N5416GP-AP
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 1600V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
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1N5416GP-TP 1N5416GP(DO-201AD).pdf
1N5416GP-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 1600V 3A DO201AD
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1600 V
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SL26HL-TP SL24HL_SL210HL(SOD-123HL).pdf
SL26HL-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 60V 2A SOD123HL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 90pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
Current - Reverse Leakage @ Vr: 60 µA @ 100 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+5.65 грн
Мінімальне замовлення: 2500
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MIF10N65AT0Y-BP MIF10N65AT0Y(ITO-220AB).pdf
MIF10N65AT0Y-BP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 15A ITO220AB
Packaging: Bulk
Package / Case: TO-220-3 Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 176 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A
Supplier Device Package: ITO-220AB
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 360µJ (on), 170µJ (off)
Test Condition: 300V, 10A, 51Ohm, 15V
Gate Charge: 59 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 31 W
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MIB10N65AT0Y-TP MIB10N65AT0Y(D2-PAK).pdf
MIB10N65AT0Y-TP
Виробник: MCC (Micro Commercial Components)
Description: IGBT TRENCH FS 650V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 176 ns
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 10A
Supplier Device Package: D2PAK
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 10ns/68ns
Switching Energy: 360µJ (on), 170µJ (off)
Test Condition: 300V, 10A, 51Ohm, 15V
Gate Charge: 59 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 100 W
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UF4007GP-AP-HF UF4001GP_UF4007GP(DO-41).pdf
UF4007GP-AP-HF
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 1000V 1A DO41
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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SIC1060PL8-TP SIC1060PL8(DFN8080A).pdf
SIC1060PL8-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SIL CARB 650V 10A DFN8080A
Packaging: Tape & Reel (TR)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 452pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DFN8080A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
3000+193.16 грн
Мінімальне замовлення: 3000
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SIC1060PL8-TP SIC1060PL8(DFN8080A).pdf
SIC1060PL8-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SIL CARB 650V 10A DFN8080A
Packaging: Cut Tape (CT)
Package / Case: 4-PowerVSFN
Mounting Type: Surface Mount
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 452pF @ 0V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: DFN8080A
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 10 A
Current - Reverse Leakage @ Vr: 44 µA @ 650 V
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+491.27 грн
10+317.57 грн
100+229.21 грн
500+179.74 грн
1000+174.56 грн
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SK54AFLQ-TP SK54AFLQ_SK56AFLQ(DO-221AC).pdf
SK54AFLQ-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 40V 5A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 265pF @ 4V, 1MHz
Current - Average Rectified (Io): 5A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
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MCACD60N04YHE3-TP MCACD60N04YHE3(PDFN5060-8D).pdf
MCACD60N04YHE3-TP
Виробник: MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 40V 60A 8PDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerLDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 50W (Tj)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 861pF @ 25V
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PDFN5060-8D
Grade: Automotive
Qualification: AEC-Q101
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1N4007GP-AP-HF 1N4001GP_1N4007GP(DO-41).pdf
1N4007GP-AP-HF
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 1000V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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MCW240N10Y-BP MCW240N10Y(TO-247).pdf
MCW240N10Y-BP
Виробник: MCC (Micro Commercial Components)
Description: POWER MOSFET
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.85mOhm @ 50A, 10V
Power Dissipation (Max): 312.5W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 256 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16232 pF @ 50 V
на замовлення 152 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
1+351.87 грн
10+224.41 грн
100+159.47 грн
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SMAJ15CAV-TP MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf
Виробник: MCC (Micro Commercial Components)
Description: TVS
Packaging: Tape & Reel (TR)
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GS1MHL-TP GS1MHL(SOD-123HL).pdf
GS1MHL-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 1000V 1A SOD123HL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123HL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+3.38 грн
Мінімальне замовлення: 2500
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SMBJP6KE15CAV-TP MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf
Виробник: MCC (Micro Commercial Components)
Description: TVS
Packaging: Tape & Reel (TR)
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SS14FLQ-TP SS14FLQ_SS16FLQ(DO-221AC).pdf
SS14FLQ-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 40V 1A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Qualification: AEC-Q101
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BZT52C12HE3-TP-A001
BZT52C12HE3-TP-A001
Виробник: MCC (Micro Commercial Components)
Description: ZENER DIODE
Packaging: Tape & Reel (TR)
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SS210FLQ-TP SS210FLQ_SS220FLQ(DO-221AC).pdf
SS210FLQ-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE SCHOTTKY 100V 2A DO221AC
Packaging: Tape & Reel (TR)
Package / Case: DO-221AC, SMA Flat Leads
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 62pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-221AC (SMA-FL)
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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SMCJ1.5KE36CAV-TP MCC%20Feature%20Products%20-%20TVS%20Diodes.pdf
Виробник: MCC (Micro Commercial Components)
Description: TVS
Packaging: Tape & Reel (TR)
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ES2DHL-TP ES2DHL_ES2JHL(SOD-123HL).pdf
ES2DHL-TP
Виробник: MCC (Micro Commercial Components)
Description: DIODE STANDARD 200V 2A SOD123HL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123HL
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна
2500+3.98 грн
Мінімальне замовлення: 2500
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SMH80A-TP SMH5.0A_SMH100A(SOD-123HL).pdf
SMH80A-TP
Виробник: MCC (Micro Commercial Components)
Description: TVS DIODE 80VWM 129VC SOD123HL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123H
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 1.55A
Voltage - Reverse Standoff (Typ): 80V
Supplier Device Package: SOD-123HL
Unidirectional Channels: 1
Voltage - Breakdown (Min): 88.8V
Voltage - Clamping (Max) @ Ipp: 129V
Power - Peak Pulse: 200W
Power Line Protection: No
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