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JAN1N5531C-1 JAN1N5531C-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 11V 500MW DO204AH
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.9 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5532B-1 JAN1N5532B-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5532B-1 JANTXV1N5532B-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Qualification: MIL-PRF-19500/437
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JAN1N5532BUR-1 JAN1N5532BUR-1 Microchip Technology 1N5518BUR-1_1N5546BUR-1.pdf Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5532BUR-1 JANTXV1N5532BUR-1 Microchip Technology 1N5518BUR-1_1N5546BUR-1.pdf Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5532C-1 JAN1N5532C-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
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JANTX1N5532C-1 JANTX1N5532C-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
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JANTXV1N5532C-1 JANTXV1N5532C-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
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JAN1N5532CUR-1 JAN1N5532CUR-1 Microchip Technology 1N5518BUR-1_1N5546BUR-1.pdf Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
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JANTX1N5532CUR-1 JANTX1N5532CUR-1 Microchip Technology 1N5518BUR-1_1N5546BUR-1.pdf Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5532CUR-1 JANTXV1N5532CUR-1 Microchip Technology 8860-lds-0037-datasheet Description: DIODE ZENER 12V 500MW DO213AA
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JAN1N5532D-1 JAN1N5532D-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
В кошику  од. на суму  грн.
JANTX1N5532D-1 JANTX1N5532D-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
В кошику  од. на суму  грн.
JANTXV1N5532D-1 JANTXV1N5532D-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5532DUR-1 JAN1N5532DUR-1 Microchip Technology 1N5518BUR-1_1N5546BUR-1.pdf Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTX1N5532DUR-1 JANTX1N5532DUR-1 Microchip Technology 1N5518BUR-1_1N5546BUR-1.pdf Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5533B-1 JAN1N5533B-1 Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 13V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
Qualification: MIL-PRF-19500/437
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JANTXV1N5533B-1 JANTXV1N5533B-1 Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 13V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
Qualification: MIL-PRF-19500/437
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JAN1N5533C-1 JAN1N5533C-1 Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 13V 500MW DO204AH
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
Qualification: MIL-PRF-19500/437
товару немає в наявності
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JAN1N5534B-1 JAN1N5534B-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 14V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5534BUR-1 JAN1N5534BUR-1 Microchip Technology 1N5518BUR-1_1N5546BUR-1.pdf Description: DIODE ZENER 14V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTX1N5534BUR-1 JANTX1N5534BUR-1 Microchip Technology 1N5518BUR-1_1N5546BUR-1.pdf Description: DIODE ZENER 14V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
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JANTXV1N5534BUR-1 JANTXV1N5534BUR-1 Microchip Technology 1N5518BUR-1_1N5546BUR-1.pdf Description: DIODE ZENER 14V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5534C-1 JAN1N5534C-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 14V 500MW DO204AH
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
В кошику  од. на суму  грн.
JANTX1N5534C-1 JANTX1N5534C-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 14V 500MW DO204AH
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
В кошику  од. на суму  грн.
JANTXV1N5534C-1 JANTXV1N5534C-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 14V 500MW DO204AH
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
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JAN1N5534CUR-1 JAN1N5534CUR-1 Microchip Technology 1N5518BUR-1_1N5546BUR-1.pdf Description: DIODE ZENER 14V 500MW DO213AA
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
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JANTX1N5534CUR-1 JANTX1N5534CUR-1 Microchip Technology 1N5518BUR-1_1N5546BUR-1.pdf Description: DIODE ZENER 14V 500MW DO213AA
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
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JANTXV1N5534CUR-1 JANTXV1N5534CUR-1 Microchip Technology 1N5518BUR-1_1N5546BUR-1.pdf Description: DIODE ZENER 14V 500MW DO213AA
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
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JAN1N5534D-1 JAN1N5534D-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 14V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
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JANTX1N5534D-1 JANTX1N5534D-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 14V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5534D-1 JANTXV1N5534D-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 14V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5534DUR-1 JAN1N5534DUR-1 Microchip Technology 1N5518BUR-1_1N5546BUR-1.pdf Description: DIODE ZENER 14V 500MW DO213AA
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTX1N5534DUR-1 JANTX1N5534DUR-1 Microchip Technology 1N5518BUR-1_1N5546BUR-1.pdf Description: DIODE ZENER 14V 500MW DO213AA
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5534DUR-1 JANTXV1N5534DUR-1 Microchip Technology 1N5518BUR-1_1N5546BUR-1.pdf Description: DIODE ZENER 14V 500MW DO213AA
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5535B-1 JAN1N5535B-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5535B-1 Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 15V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
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JAN1N5535C-1 JAN1N5535C-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5536B-1 JAN1N5536B-1 Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 16V 500MW DO35
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JANTXV1N5536B-1 JANTXV1N5536B-1 Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 16V 500MW DO35
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JAN1N5536C-1 JAN1N5536C-1 Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 16V 500MW DO35
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JAN1N5537B-1 JAN1N5537B-1 Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 17V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 15.3 V
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JANTXV1N5538B-1 JANTXV1N5538B-1 Microchip Technology 1N5518B_1N5546B-1.pdf Description: DIODE ZENER 18V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 16.2 V
Qualification: MIL-PRF-19500/437
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JAN1N5539B-1 JAN1N5539B-1 Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 19V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 17.1 V
Qualification: MIL-PRF-19500/437
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JANTXV1N5539B-1 JANTXV1N5539B-1 Microchip Technology 123956-lds-0037-1-datasheet Description: DIODE ZENER 19V 500MW DO35
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JAN1N5550US Microchip Technology 10966-sa7-43-datasheet Description: DIODE GEN PURP 200V 3A B-MELF
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JAN1N5551US JAN1N5551US Microchip Technology LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 400V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/420
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JAN1N5553US JAN1N5553US Microchip Technology 10966-sa7-43-datasheet Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JANTX1N5553US JANTX1N5553US Microchip Technology 10966-sa7-43-datasheet Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JANTXV1N5554US JANTXV1N5554US Microchip Technology 10966-sa7-43-datasheet Description: DIODE GEN PURP 1KV 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: MIL-PRF-19500/420
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JANTXV1N5615US JANTXV1N5615US Microchip Technology 11062-sd47a-datasheet Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Grade: Military
Qualification: MIL-PRF-19500/429
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JAN1N5619US JAN1N5619US Microchip Technology 11062-sd47a-datasheet Description: DIODE STANDARD 600V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Qualification: MIL-PRF-19500/429
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JANTX1N5619US JANTX1N5619US Microchip Technology 11062-sd47a-datasheet Description: DIODE STANDARD 600V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Qualification: MIL-PRF-19500/429
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JANTXV1N5619US JANTXV1N5619US Microchip Technology 11062-sd47a-datasheet Description: DIODE STANDARD 600V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Qualification: MIL-PRF-19500/429
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JAN1N5804URS JAN1N5804URS Microchip Technology LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf Description: DIODE STANDARD 100V 1A AMELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
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JANTX1N5804URS JANTX1N5804URS Microchip Technology LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf Description: DIODE STANDARD 100V 1A AMELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Military
Qualification: MIL-PRF-19500/477
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JANTXV1N5804URS JANTXV1N5804URS Microchip Technology LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf Description: DIODE STANDARD 100V 1A AMELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
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JAN1N5811URS JAN1N5811URS Microchip Technology 124792-lds-0168-1-datasheet Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/477
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JANTX1N5811URS JANTX1N5811URS Microchip Technology 124792-lds-0168-1-datasheet Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/477
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JANTXV1N5811URS JANTXV1N5811URS Microchip Technology 124792-lds-0168-1-datasheet Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/477
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JAN1N5531C-1 1N5518B_1N5546B-1.pdf
JAN1N5531C-1
Виробник: Microchip Technology
Description: DIODE ZENER 11V 500MW DO204AH
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 9.9 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5532B-1 1N5518B_1N5546B-1.pdf
JAN1N5532B-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5532B-1 1N5518B_1N5546B-1.pdf
JANTXV1N5532B-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Qualification: MIL-PRF-19500/437
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JAN1N5532BUR-1 1N5518BUR-1_1N5546BUR-1.pdf
JAN1N5532BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5532BUR-1 1N5518BUR-1_1N5546BUR-1.pdf
JANTXV1N5532BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JAN1N5532C-1 1N5518B_1N5546B-1.pdf
JAN1N5532C-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JANTX1N5532C-1 1N5518B_1N5546B-1.pdf
JANTX1N5532C-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JANTXV1N5532C-1 1N5518B_1N5546B-1.pdf
JANTXV1N5532C-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JAN1N5532CUR-1 1N5518BUR-1_1N5546BUR-1.pdf
JAN1N5532CUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
В кошику  од. на суму  грн.
JANTX1N5532CUR-1 1N5518BUR-1_1N5546BUR-1.pdf
JANTX1N5532CUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JANTXV1N5532CUR-1 8860-lds-0037-datasheet
JANTXV1N5532CUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AA
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В кошику  од. на суму  грн.
JAN1N5532D-1 1N5518B_1N5546B-1.pdf
JAN1N5532D-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JANTX1N5532D-1 1N5518B_1N5546B-1.pdf
JANTX1N5532D-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JANTXV1N5532D-1 1N5518B_1N5546B-1.pdf
JANTXV1N5532D-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JAN1N5532DUR-1 1N5518BUR-1_1N5546BUR-1.pdf
JAN1N5532DUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
В кошику  од. на суму  грн.
JANTX1N5532DUR-1 1N5518BUR-1_1N5546BUR-1.pdf
JANTX1N5532DUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AA
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.8 V
Grade: Military
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JAN1N5533B-1 123956-lds-0037-1-datasheet
JAN1N5533B-1
Виробник: Microchip Technology
Description: DIODE ZENER 13V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JANTXV1N5533B-1 123956-lds-0037-1-datasheet
JANTXV1N5533B-1
Виробник: Microchip Technology
Description: DIODE ZENER 13V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JAN1N5533C-1 123956-lds-0037-1-datasheet
JAN1N5533C-1
Виробник: Microchip Technology
Description: DIODE ZENER 13V 500MW DO204AH
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 11.7 V
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JAN1N5534B-1 1N5518B_1N5546B-1.pdf
JAN1N5534B-1
Виробник: Microchip Technology
Description: DIODE ZENER 14V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JAN1N5534BUR-1 1N5518BUR-1_1N5546BUR-1.pdf
JAN1N5534BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 14V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JANTX1N5534BUR-1 1N5518BUR-1_1N5546BUR-1.pdf
JANTX1N5534BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 14V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
В кошику  од. на суму  грн.
JANTXV1N5534BUR-1 1N5518BUR-1_1N5546BUR-1.pdf
JANTXV1N5534BUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 14V 500MW DO213AA
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
В кошику  од. на суму  грн.
JAN1N5534C-1 1N5518B_1N5546B-1.pdf
JAN1N5534C-1
Виробник: Microchip Technology
Description: DIODE ZENER 14V 500MW DO204AH
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
В кошику  од. на суму  грн.
JANTX1N5534C-1 1N5518B_1N5546B-1.pdf
JANTX1N5534C-1
Виробник: Microchip Technology
Description: DIODE ZENER 14V 500MW DO204AH
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
В кошику  од. на суму  грн.
JANTXV1N5534C-1 1N5518B_1N5546B-1.pdf
JANTXV1N5534C-1
Виробник: Microchip Technology
Description: DIODE ZENER 14V 500MW DO204AH
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
В кошику  од. на суму  грн.
JAN1N5534CUR-1 1N5518BUR-1_1N5546BUR-1.pdf
JAN1N5534CUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 14V 500MW DO213AA
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JANTX1N5534CUR-1 1N5518BUR-1_1N5546BUR-1.pdf
JANTX1N5534CUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 14V 500MW DO213AA
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
В кошику  од. на суму  грн.
JANTXV1N5534CUR-1 1N5518BUR-1_1N5546BUR-1.pdf
JANTXV1N5534CUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 14V 500MW DO213AA
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
В кошику  од. на суму  грн.
JAN1N5534D-1 1N5518B_1N5546B-1.pdf
JAN1N5534D-1
Виробник: Microchip Technology
Description: DIODE ZENER 14V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
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JANTX1N5534D-1 1N5518B_1N5546B-1.pdf
JANTX1N5534D-1
Виробник: Microchip Technology
Description: DIODE ZENER 14V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JANTXV1N5534D-1 1N5518B_1N5546B-1.pdf
JANTXV1N5534D-1
Виробник: Microchip Technology
Description: DIODE ZENER 14V 500MW DO204AH
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
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В кошику  од. на суму  грн.
JAN1N5534DUR-1 1N5518BUR-1_1N5546BUR-1.pdf
JAN1N5534DUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 14V 500MW DO213AA
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
В кошику  од. на суму  грн.
JANTX1N5534DUR-1 1N5518BUR-1_1N5546BUR-1.pdf
JANTX1N5534DUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 14V 500MW DO213AA
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
товару немає в наявності
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JANTXV1N5534DUR-1 1N5518BUR-1_1N5546BUR-1.pdf
JANTXV1N5534DUR-1
Виробник: Microchip Technology
Description: DIODE ZENER 14V 500MW DO213AA
Packaging: Bulk
Tolerance: ±1%
Package / Case: DO-213AA
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-213AA
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 12.6 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5535B-1 1N5518B_1N5546B-1.pdf
JAN1N5535B-1
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JANTXV1N5535B-1 123956-lds-0037-1-datasheet
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
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JAN1N5535C-1 1N5518B_1N5546B-1.pdf
JAN1N5535C-1
Виробник: Microchip Technology
Description: DIODE ZENER 15V 500MW DO204AH
Packaging: Bulk
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 13.5 V
Grade: Military
Qualification: MIL-PRF-19500/437
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JAN1N5536B-1 123956-lds-0037-1-datasheet
JAN1N5536B-1
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO35
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JANTXV1N5536B-1 123956-lds-0037-1-datasheet
JANTXV1N5536B-1
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO35
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JAN1N5536C-1 123956-lds-0037-1-datasheet
JAN1N5536C-1
Виробник: Microchip Technology
Description: DIODE ZENER 16V 500MW DO35
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JAN1N5537B-1 123956-lds-0037-1-datasheet
JAN1N5537B-1
Виробник: Microchip Technology
Description: DIODE ZENER 17V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 17 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-35 (DO-204AH)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 15.3 V
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JANTXV1N5538B-1 1N5518B_1N5546B-1.pdf
JANTXV1N5538B-1
Виробник: Microchip Technology
Description: DIODE ZENER 18V 500MW DO204AH
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 16.2 V
Qualification: MIL-PRF-19500/437
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JAN1N5539B-1 123956-lds-0037-1-datasheet
JAN1N5539B-1
Виробник: Microchip Technology
Description: DIODE ZENER 19V 500MW DO35
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 19 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: DO-204AH (DO-35)
Grade: Military
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 10 nA @ 17.1 V
Qualification: MIL-PRF-19500/437
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JANTXV1N5539B-1 123956-lds-0037-1-datasheet
JANTXV1N5539B-1
Виробник: Microchip Technology
Description: DIODE ZENER 19V 500MW DO35
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JAN1N5550US 10966-sa7-43-datasheet
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 3A B-MELF
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JAN1N5551US LDS-0230-1%2C+1N5550US+thru1N5554US%2C+MIL-PRF-19500-420.pdf
JAN1N5551US
Виробник: Microchip Technology
Description: DIODE STANDARD 400V 3A D5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/420
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JAN1N5553US 10966-sa7-43-datasheet
JAN1N5553US
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JANTX1N5553US 10966-sa7-43-datasheet
JANTX1N5553US
Виробник: Microchip Technology
Description: DIODE GEN PURP 800V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
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JANTXV1N5554US 10966-sa7-43-datasheet
JANTXV1N5554US
Виробник: Microchip Technology
Description: DIODE GEN PURP 1KV 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Qualification: MIL-PRF-19500/420
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JANTXV1N5615US 11062-sd47a-datasheet
JANTXV1N5615US
Виробник: Microchip Technology
Description: DIODE GEN PURP 200V 1A D-5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Grade: Military
Qualification: MIL-PRF-19500/429
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JAN1N5619US 11062-sd47a-datasheet
JAN1N5619US
Виробник: Microchip Technology
Description: DIODE STANDARD 600V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Qualification: MIL-PRF-19500/429
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JANTX1N5619US 11062-sd47a-datasheet
JANTX1N5619US
Виробник: Microchip Technology
Description: DIODE STANDARD 600V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Qualification: MIL-PRF-19500/429
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JANTXV1N5619US 11062-sd47a-datasheet
JANTXV1N5619US
Виробник: Microchip Technology
Description: DIODE STANDARD 600V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Qualification: MIL-PRF-19500/429
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JAN1N5804URS LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf
JAN1N5804URS
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 1A AMELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
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JANTX1N5804URS LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf
JANTX1N5804URS
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 1A AMELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Military
Qualification: MIL-PRF-19500/477
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JANTXV1N5804URS LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf
JANTXV1N5804URS
Виробник: Microchip Technology
Description: DIODE STANDARD 100V 1A AMELF
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
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JAN1N5811URS 124792-lds-0168-1-datasheet
JAN1N5811URS
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/477
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JANTX1N5811URS 124792-lds-0168-1-datasheet
JANTX1N5811URS
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/477
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JANTXV1N5811URS 124792-lds-0168-1-datasheet
JANTXV1N5811URS
Виробник: Microchip Technology
Description: DIODE GEN PURP 150V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/477
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