Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (357952) > Сторінка 1072 з 5966
| Фото | Назва | Виробник | Інформація |
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Jan2N2369AUA | Microchip Technology |
 Description: TRANS NPN 15V TO18Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Part Status: Active Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 360 mW Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
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| Jantxv2N2369AUA | Microchip Technology |
Description: TRANS NPN 15V UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: UA Grade: Military Part Status: Active Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 360 mW Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
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2N2432 | Microchip Technology |
Description: TRANS NPN 30V 0.1A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 175°C (TJ) Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW |
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2N2432A | Microchip Technology |
Description: TRANS NPN 30V 0.1A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 175°C (TJ) Current - Collector Cutoff (Max): 10nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V Supplier Device Package: TO-18 (TO-206AA) Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 300 mW |
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| 2N2484UA | Microchip Technology |
Description: TRANS NPN 60V 0.05A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V Supplier Device Package: UA Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW |
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| JAN2N2484UA | Microchip Technology |
Description: TRANS NPN 60V 0.05A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V Supplier Device Package: UA Grade: Military Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW Qualification: MIL-PRF-19500/376 |
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| JANTX2N2484UA | Microchip Technology |
Description: TRANS NPN 60V 0.05A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V Supplier Device Package: UA Grade: Military Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW Qualification: MIL-PRF-19500/376 |
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| JANTXV2N2484UA | Microchip Technology |
Description: TRANS NPN 60V 0.05A UA Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 2nA DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V Supplier Device Package: UA Grade: Military Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW Qualification: MIL-PRF-19500/376 |
товару немає в наявності |
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JANTX2N2904 | Microchip Technology |
Description: TRANS PNP 40V 0.6A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 800 mW Qualification: MIL-PRF-19500/290 |
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JANTXV2N2904 | Microchip Technology |
Description: TRANS PNP 40V 0.6A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 800 mW Qualification: MIL-PRF-19500/290 |
товару немає в наявності |
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JAN2N2904A | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW Qualification: MIL-PRF-19500/290 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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Jantxv2N2904A | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW Qualification: MIL-PRF-19500/290 |
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2N2904AL | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-5 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| Jantx2N2904AL | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW Qualification: MIL-PRF-19500/290 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| Jantxv2N2904AL | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW Qualification: MIL-PRF-19500/290 |
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JAN2N2905 | Microchip Technology |
Description: TRANS PNP 40V 0.6A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 800 mW Qualification: MIL-PRF-19500/290 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTX2N2905 | Microchip Technology |
Description: TRANS PNP 40V 0.6A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 800 mW Qualification: MIL-PRF-19500/290 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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2N2906AL | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V Supplier Device Package: TO-18 (TO-206AA) Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JAN2N2906AL | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Qualification: MIL-PRF-19500/291 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTX2N2906AL | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Qualification: MIL-PRF-19500/291 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTXV2N2906AL | Microchip Technology |
Description: TRANS PNP 60V 0.6A TO18 Packaging: Bulk Package / Case: TO-206AA, TO-18-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-18 (TO-206AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Qualification: MIL-PRF-19500/291 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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2N2906AUA | Microchip Technology |
Description: TRANS PNP 60V 0.6A 4SMD Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V Supplier Device Package: 4-SMD Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
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В кошику од. на суму грн. | ||||
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Jan2N2906AUA | Microchip Technology |
Description: TRANS PNP 60V 0.6A 4SMD Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: 4-SMD Grade: Military Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Qualification: MIL-PRF-19500/291 |
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В кошику од. на суму грн. | ||||
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Jantx2N2906AUA | Microchip Technology |
Description: TRANS PNP 60V 0.6A 4SMD Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: 4-SMD Grade: Military Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Qualification: MIL-PRF-19500/291 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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Jantxv2N2906AUA | Microchip Technology |
Description: TRANS PNP 60V 0.6A 4SMD Packaging: Bulk Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 50nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: 4-SMD Grade: Military Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW Qualification: MIL-PRF-19500/291 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| 2N2920L | Microchip Technology |
Description: TRANS 2NPN 60V 0.03A TO78 Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Operating Temperature: 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: TO-78-6 |
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Jan2N2920L | Microchip Technology |
Description: TRANS 2NPN 60V 0.03A TO78 Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Operating Temperature: 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: TO-78-6 Grade: Military Qualification: MIL-PRF-19500/355 |
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Jantx2N2920L | Microchip Technology |
Description: TRANS 2NPN 60V 0.03A TO78 Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Operating Temperature: 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: TO-78-6 Grade: Military Qualification: MIL-PRF-19500/355 |
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| Jantxv2N2920L | Microchip Technology |
Description: TRANS 2NPN 60V 0.03A TO78 Packaging: Bulk Package / Case: TO-78-6 Metal Can Mounting Type: Through Hole Transistor Type: 2 NPN (Dual) Operating Temperature: 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: TO-78-6 Grade: Military Qualification: MIL-PRF-19500/355 |
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В кошику од. на суму грн. | |||||
~~6.jpg "Jan2N2920U") |
Jan2N2920U | Microchip Technology |
Description: TRANS 2NPN 60V 0.03A Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: U Grade: Military Qualification: MIL-PRF-19500/355 |
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| Jantxv2N2920U | Microchip Technology |
Description: TRANS 2NPN 60V 0.03A Packaging: Bulk Package / Case: 6-SMD, No Lead Mounting Type: Surface Mount Transistor Type: 2 NPN (Dual) Operating Temperature: 200°C (TJ) Power - Max: 350mW Current - Collector (Ic) (Max): 30mA Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V Supplier Device Package: 6-SMD Grade: Military Qualification: MIL-PRF-19500/355 |
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~~3.jpg "2N2945AUB") |
2N2945AUB | Microchip Technology |
Description: TRANS PNP 20V 0.1A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV Supplier Device Package: UB Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 400 mW |
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2N2946AUB | Microchip Technology |
Description: TRANS PNP 35V 0.1A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV Supplier Device Package: UB Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 35 V Power - Max: 400 mW |
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| JAN2N3055 | Microchip Technology |
Description: TRANS NPN 70V 15A TO3 Packaging: Bulk Package / Case: TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 3.3A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Supplier Device Package: TO-3 (TO-204AA) Grade: Military Part Status: Active Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 70 V Power - Max: 6 W Qualification: MIL-PRF-19500/407 |
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В кошику од. на суму грн. | |||||
| JANTXV2N3055 | Microchip Technology |
Description: TRANS NPN 70V 15A TO3 Packaging: Bulk Package / Case: TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 3.3A, 10A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V Supplier Device Package: TO-3 (TO-204AA) Grade: Military Part Status: Obsolete Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 70 V Power - Max: 6 W Qualification: MIL-PRF-19500/407 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
|
|
2N3250A | Microchip Technology |
Description: TRANS PNP 60V 0.2A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V Supplier Device Package: TO-39 (TO-205AD) Current - Collector (Ic) (Max): 200 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 360 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
JANTX2N3499 | Microchip Technology |
Description: TRANS NPN 100V 0.5A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W Qualification: MIL-PRF-19500/366 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| Jantx2N3499L | Microchip Technology |
Description: TRANS NPN 100V 0.5A TO5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
|
|
2N3501UB | Microchip Technology |
Description: TRANS NPN 150V 0.3A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Supplier Device Package: UB Grade: Military Part Status: Active Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 500 mW Qualification: MIL-PRF-19500/366 |
на замовлення 139 шт: термін постачання 21-31 дні (днів) |
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JAN2N3506 | Microchip Technology |
Description: TRANS NPN 40V 3A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W Qualification: MIL-PRF-19500/349 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| Jantxv2N3506 | Microchip Technology |
Description: TRANS NPN 40V 3A TO-39 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
|
|
JAN2N3506A | Microchip Technology |
Description: TRANS NPN 40V 3A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W Qualification: MIL-PRF-19500/349 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
JANTX2N3506A | Microchip Technology |
Description: TRANS NPN 40V 3A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W Qualification: MIL-PRF-19500/349 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| JANTXV2N3506A | Microchip Technology |
Description: TRANS NPN 40V 3A TO-39 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JAN2N3506AL | Microchip Technology |
Description: TRANS NPN 40V 3A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W Qualification: MIL-PRF-19500/349 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTX2N3506AL | Microchip Technology |
Description: TRANS NPN 40V 3A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W Qualification: MIL-PRF-19500/349 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTXV2N3506AL | Microchip Technology |
Description: TRANS NPN 40V 3A TO5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| Jan2N3506L | Microchip Technology |
Description: TRANS NPN 40V 3A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W Qualification: MIL-PRF-19500/349 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| Jantx2N3506L | Microchip Technology |
Description: TRANS NPN 40V 3A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W Qualification: MIL-PRF-19500/349 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| Jantxv2N3506L | Microchip Technology |
Description: TRANS NPN 40V 3A TO5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
|
|
JAN2N3507 | Microchip Technology |
Description: TRANS NPN 50V 3A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W Qualification: MIL-PRF-19500/349 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
JAN2N3507A | Microchip Technology |
Description: TRANS NPN 50V 3A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W Qualification: MIL-PRF-19500/349 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
JANTX2N3507A | Microchip Technology |
Description: TRANS NPN 50V 3A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W Qualification: MIL-PRF-19500/349 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| JANTXV2N3507A | Microchip Technology |
Description: TRANS NPN 50V 3A TO39 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JAN2N3507AL | Microchip Technology |
Description: TRANS NPN 50V 3A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W Qualification: MIL-PRF-19500/349 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTX2N3507AL | Microchip Technology |
Description: TRANS NPN 50V 3A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W Qualification: MIL-PRF-19500/349 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTXV2N3507AL | Microchip Technology |
Description: TRANS NPN 50V 3A TO5 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| Jan2N3507L | Microchip Technology |
Description: TRANS NPN 50V 3A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W Qualification: MIL-PRF-19500/349 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| Jantx2N3507L | Microchip Technology |
Description: TRANS NPN 50V 3A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 1 W Qualification: MIL-PRF-19500/349 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| Jantxv2N3507L | Microchip Technology |
Description: TRANS NPN 50V 3A TO5 |
товару немає в наявності |
В кошику од. на суму грн. |
| Jan2N2369AUA |
|
Виробник: Microchip Technology
Description: TRANS NPN 15V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
Description: TRANS NPN 15V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
товару немає в наявності
В кошику
од. на суму грн.
| Jantxv2N2369AUA |
|
Виробник: Microchip Technology
Description: TRANS NPN 15V UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
Description: TRANS NPN 15V UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UA
Grade: Military
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
товару немає в наявності
В кошику
од. на суму грн.
| 2N2432 |
|
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Description: TRANS NPN 30V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2N2432A |
|
Виробник: Microchip Technology
Description: TRANS NPN 30V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
Description: TRANS NPN 30V 0.1A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 175°C (TJ)
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1mA, 5V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 300 mW
товару немає в наявності
В кошику
од. на суму грн.
| 2N2484UA |
|
Виробник: Microchip Technology
Description: TRANS NPN 60V 0.05A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: UA
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Description: TRANS NPN 60V 0.05A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: UA
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N2484UA |
|
Виробник: Microchip Technology
Description: TRANS NPN 60V 0.05A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/376
Description: TRANS NPN 60V 0.05A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/376
товару немає в наявності
В кошику
од. на суму грн.
| JANTX2N2484UA |
|
Виробник: Microchip Technology
Description: TRANS NPN 60V 0.05A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/376
Description: TRANS NPN 60V 0.05A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/376
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV2N2484UA |
|
Виробник: Microchip Technology
Description: TRANS NPN 60V 0.05A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/376
Description: TRANS NPN 60V 0.05A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/376
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| JANTX2N2904 |
|
Виробник: Microchip Technology
Description: TRANS PNP 40V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/290
Description: TRANS PNP 40V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/290
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В кошику
од. на суму грн.
| JANTXV2N2904 |
|
Виробник: Microchip Technology
Description: TRANS PNP 40V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/290
Description: TRANS PNP 40V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/290
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В кошику
од. на суму грн.
| JAN2N2904A |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/290
Description: TRANS PNP 60V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/290
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В кошику
од. на суму грн.
| Jantxv2N2904A |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/290
Description: TRANS PNP 60V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/290
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В кошику
од. на суму грн.
| 2N2904AL |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS PNP 60V 0.6A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
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В кошику
од. на суму грн.
| Jantx2N2904AL |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/290
Description: TRANS PNP 60V 0.6A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/290
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В кошику
од. на суму грн.
| Jantxv2N2904AL |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/290
Description: TRANS PNP 60V 0.6A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/290
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В кошику
од. на суму грн.
| JAN2N2905 |
|
Виробник: Microchip Technology
Description: TRANS PNP 40V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/290
Description: TRANS PNP 40V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/290
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В кошику
од. на суму грн.
| JANTX2N2905 |
|
Виробник: Microchip Technology
Description: TRANS PNP 40V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/290
Description: TRANS PNP 40V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/290
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В кошику
од. на суму грн.
| 2N2906AL |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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В кошику
од. на суму грн.
| JAN2N2906AL |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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В кошику
од. на суму грн.
| JANTX2N2906AL |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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В кошику
од. на суму грн.
| JANTXV2N2906AL |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Description: TRANS PNP 60V 0.6A TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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В кошику
од. на суму грн.
| 2N2906AUA |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V
Supplier Device Package: 4-SMD
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1mA, 10V
Supplier Device Package: 4-SMD
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
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В кошику
од. на суму грн.
| Jan2N2906AUA |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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В кошику
од. на суму грн.
| Jantx2N2906AUA |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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В кошику
од. на суму грн.
| Jantxv2N2906AUA |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Description: TRANS PNP 60V 0.6A 4SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: 4-SMD
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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| 2N2920L |
Виробник: Microchip Technology
Description: TRANS 2NPN 60V 0.03A TO78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Description: TRANS 2NPN 60V 0.03A TO78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
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В кошику
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| Jan2N2920L |
Виробник: Microchip Technology
Description: TRANS 2NPN 60V 0.03A TO78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/355
Description: TRANS 2NPN 60V 0.03A TO78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/355
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В кошику
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| Jantx2N2920L |
Виробник: Microchip Technology
Description: TRANS 2NPN 60V 0.03A TO78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/355
Description: TRANS 2NPN 60V 0.03A TO78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/355
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| Jantxv2N2920L |
Виробник: Microchip Technology
Description: TRANS 2NPN 60V 0.03A TO78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/355
Description: TRANS 2NPN 60V 0.03A TO78
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/355
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В кошику
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| Jan2N2920U |
Виробник: Microchip Technology
Description: TRANS 2NPN 60V 0.03A
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: U
Grade: Military
Qualification: MIL-PRF-19500/355
Description: TRANS 2NPN 60V 0.03A
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: U
Grade: Military
Qualification: MIL-PRF-19500/355
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| Jantxv2N2920U |
Виробник: Microchip Technology
Description: TRANS 2NPN 60V 0.03A
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/355
Description: TRANS 2NPN 60V 0.03A
Packaging: Bulk
Package / Case: 6-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 5V
Supplier Device Package: 6-SMD
Grade: Military
Qualification: MIL-PRF-19500/355
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од. на суму грн.
| 2N2945AUB |
|
Виробник: Microchip Technology
Description: TRANS PNP 20V 0.1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
Supplier Device Package: UB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Description: TRANS PNP 20V 0.1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 500mV
Supplier Device Package: UB
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
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В кошику
од. на суму грн.
| 2N2946AUB |
|
Виробник: Microchip Technology
Description: TRANS PNP 35V 0.1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 400 mW
Description: TRANS PNP 35V 0.1A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 35 V
Power - Max: 400 mW
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В кошику
од. на суму грн.
| JAN2N3055 |
|
Виробник: Microchip Technology
Description: TRANS NPN 70V 15A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 3.3A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/407
Description: TRANS NPN 70V 15A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 3.3A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/407
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В кошику
од. на суму грн.
| JANTXV2N3055 |
|
Виробник: Microchip Technology
Description: TRANS NPN 70V 15A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 3.3A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/407
Description: TRANS NPN 70V 15A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 3.3A, 10A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 4A, 4V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Part Status: Obsolete
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 70 V
Power - Max: 6 W
Qualification: MIL-PRF-19500/407
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од. на суму грн.
| 2N3250A |
|
Виробник: Microchip Technology
Description: TRANS PNP 60V 0.2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Description: TRANS PNP 60V 0.2A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
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В кошику
од. на суму грн.
| JANTX2N3499 |
|
Виробник: Microchip Technology
Description: TRANS NPN 100V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
Description: TRANS NPN 100V 0.5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/366
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| Jantx2N3499L |
|
Виробник: Microchip Technology
Description: TRANS NPN 100V 0.5A TO5
Description: TRANS NPN 100V 0.5A TO5
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| 2N3501UB |
|
Виробник: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
Description: TRANS NPN 150V 0.3A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/366
на замовлення 139 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 1307.76 грн |
| 100+ | 1169.27 грн |
| JAN2N3506 |
|
Виробник: Microchip Technology
Description: TRANS NPN 40V 3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
Description: TRANS NPN 40V 3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
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од. на суму грн.
| Jantxv2N3506 |
|
Виробник: Microchip Technology
Description: TRANS NPN 40V 3A TO-39
Description: TRANS NPN 40V 3A TO-39
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В кошику
од. на суму грн.
| JAN2N3506A |
|
Виробник: Microchip Technology
Description: TRANS NPN 40V 3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
Description: TRANS NPN 40V 3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
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В кошику
од. на суму грн.
| JANTX2N3506A |
|
Виробник: Microchip Technology
Description: TRANS NPN 40V 3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
Description: TRANS NPN 40V 3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
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од. на суму грн.
| JANTXV2N3506A |
|
Виробник: Microchip Technology
Description: TRANS NPN 40V 3A TO-39
Description: TRANS NPN 40V 3A TO-39
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| JAN2N3506AL |
|
Виробник: Microchip Technology
Description: TRANS NPN 40V 3A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
Description: TRANS NPN 40V 3A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
товару немає в наявності
В кошику
од. на суму грн.
| JANTX2N3506AL |
|
Виробник: Microchip Technology
Description: TRANS NPN 40V 3A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
Description: TRANS NPN 40V 3A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
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В кошику
од. на суму грн.
| JANTXV2N3506AL |
|
Виробник: Microchip Technology
Description: TRANS NPN 40V 3A TO5
Description: TRANS NPN 40V 3A TO5
товару немає в наявності
В кошику
од. на суму грн.
| Jan2N3506L |
|
Виробник: Microchip Technology
Description: TRANS NPN 40V 3A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
Description: TRANS NPN 40V 3A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
товару немає в наявності
В кошику
од. на суму грн.
| Jantx2N3506L |
|
Виробник: Microchip Technology
Description: TRANS NPN 40V 3A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
Description: TRANS NPN 40V 3A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1.5A, 2V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
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В кошику
од. на суму грн.
| Jantxv2N3506L |
|
Виробник: Microchip Technology
Description: TRANS NPN 40V 3A TO5
Description: TRANS NPN 40V 3A TO5
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N3507 |
|
Виробник: Microchip Technology
Description: TRANS NPN 50V 3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
Description: TRANS NPN 50V 3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N3507A |
|
Виробник: Microchip Technology
Description: TRANS NPN 50V 3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
Description: TRANS NPN 50V 3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
товару немає в наявності
В кошику
од. на суму грн.
| JANTX2N3507A |
|
Виробник: Microchip Technology
Description: TRANS NPN 50V 3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
Description: TRANS NPN 50V 3A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
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В кошику
од. на суму грн.
| JANTXV2N3507A |
|
Виробник: Microchip Technology
Description: TRANS NPN 50V 3A TO39
Description: TRANS NPN 50V 3A TO39
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N3507AL |
|
Виробник: Microchip Technology
Description: TRANS NPN 50V 3A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
Description: TRANS NPN 50V 3A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
товару немає в наявності
В кошику
од. на суму грн.
| JANTX2N3507AL |
|
Виробник: Microchip Technology
Description: TRANS NPN 50V 3A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
Description: TRANS NPN 50V 3A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV2N3507AL |
|
Виробник: Microchip Technology
Description: TRANS NPN 50V 3A TO5
Description: TRANS NPN 50V 3A TO5
товару немає в наявності
В кошику
од. на суму грн.
| Jan2N3507L |
|
Виробник: Microchip Technology
Description: TRANS NPN 50V 3A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
Description: TRANS NPN 50V 3A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
товару немає в наявності
В кошику
од. на суму грн.
| Jantx2N3507L |
|
Виробник: Microchip Technology
Description: TRANS NPN 50V 3A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
Description: TRANS NPN 50V 3A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 250mA, 2.5A
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 1.5A, 2V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/349
товару немає в наявності
В кошику
од. на суму грн.
| Jantxv2N3507L |
|
Виробник: Microchip Technology
Description: TRANS NPN 50V 3A TO5
Description: TRANS NPN 50V 3A TO5
товару немає в наявності
В кошику
од. на суму грн.