Продукція > MICROCHIP TECHNOLOGY > Всі товари виробника MICROCHIP TECHNOLOGY (343077) > Сторінка 1072 з 5718
| Фото | Назва | Виробник | Інформація |
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JANTXV2N4237 | Microchip Technology |
 Description: TRANS NPN 40V 1A TO39Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Supplier Device Package: TO-39 (TO-205AD) Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 40 V Power - Max: 1 W Grade: Military Qualification: MIL-PRF-19500/581 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JAN2N4238 | Microchip Technology |
Description: TRANS NPN 60V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W Qualification: MIL-PRF-19500/581 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTX2N4238 | Microchip Technology |
Description: TRANS NPN 60V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W Qualification: MIL-PRF-19500/581 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTXV2N4238 | Microchip Technology |
Description: TRANS NPN 60V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 1 W Qualification: MIL-PRF-19500/581 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JAN2N4239 | Microchip Technology |
Description: TRANS NPN 80V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTX2N4239 | Microchip Technology |
Description: TRANS NPN 80V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTXV2N4239 | Microchip Technology |
Description: TRANS NPN 80V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1 W |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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2N4261 | Microchip Technology |
Description: TRANS PNP 15V 0.03A TO72 Packaging: Bulk Package / Case: TO-72-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V Supplier Device Package: TO-72 Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 200 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JAN2N4261 | Microchip Technology |
Description: TRANS PNP 15V 0.03A TO72 Packaging: Bulk Package / Case: TO-72-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V Supplier Device Package: TO-72 Grade: Military Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 200 mW Qualification: MIL-PRF-19500/511 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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JANTXV2N4261 | Microchip Technology |
Description: TRANS PNP 15V 0.03A TO72 Packaging: Bulk Package / Case: TO-72-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V Supplier Device Package: TO-72 Grade: Military Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 200 mW Qualification: MIL-PRF-19500/511 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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2N4261UB | Microchip Technology |
Description: TRANS PNP 15V 0.03A |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| JAN2N4261UB | Microchip Technology |
Description: TRANS PNP 15V 0.03A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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JANTX2N4261UB | Microchip Technology |
Description: TRANS PNP 15V 0.03A UB Packaging: Bulk Package / Case: 3-SMD, No Lead Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V Supplier Device Package: UB Grade: Military Current - Collector (Ic) (Max): 30 mA Voltage - Collector Emitter Breakdown (Max): 15 V Power - Max: 200 mW Qualification: MIL-PRF-19500/511 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| JANTXV2N4261UB | Microchip Technology |
Description: TRANS PNP 15V 0.03A |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N4405 | Microchip Technology |
Description: TRANS PNP TO-39 Packaging: Bulk |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| 2N4449 | Microchip Technology |
Description: TRANS NPN 20V TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: TO-46 (TO-206AB) Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 360 mW |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JAN2N4449 | Microchip Technology |
Description: TRANS NPN 20V TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: TO-46 (TO-206AB) Grade: Military Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 360 mW Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTX2N4449 | Microchip Technology |
Description: TRANS NPN 20V TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: TO-46 (TO-206AB) Grade: Military Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 360 mW Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| Jantxv2N4449 | Microchip Technology |
Description: TRANS NPN 20V TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA Current - Collector Cutoff (Max): 400nA DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V Supplier Device Package: TO-46 (TO-206AB) Grade: Military Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 360 mW Qualification: MIL-PRF-19500/317 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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JAN2N5339 | Microchip Technology |
Description: TRANS NPN 100V 5A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W Grade: Military Qualification: MIL-PRF-19500/560 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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Jantxv2N5339 | Microchip Technology |
Description: TRANS NPN 100V 5A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W Grade: Military Qualification: MIL-PRF-19500/560 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| JAN2N5415 | Microchip Technology |
Description: TRANS PNP 200V 1A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 750 mW Qualification: MIL-PRF-19500/485 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| Jantxv2N5415 | Microchip Technology |
Description: TRANS PNP 200V 1A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-5 Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 750 mW Grade: Military Qualification: MIL-PRF-19500/485 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
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JAN2N5415S | Microchip Technology |
Description: TRANS PNP 200V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 750 mW Grade: Military Qualification: MIL-PRF-19500/485 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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Jantx2N5415S | Microchip Technology |
Description: TRANS PNP 200V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 750 mW Grade: Military Qualification: MIL-PRF-19500/485 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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Jantxv2N5415S | Microchip Technology |
Description: TRANS PNP 200V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 750 mW Grade: Military Qualification: MIL-PRF-19500/485 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| JAN2N5416 | Microchip Technology |
Description: TRANS PNP 300V 1A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-5 Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 750 mW Qualification: MIL-PRF-19500/485 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTX2N5416 | Microchip Technology |
Description: TRANS PNP 300V 1A TO-5 Packaging: Bulk Package / Case: TO-205AA, TO-5-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-5 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 750 mW Grade: Military Qualification: MIL-PRF-19500/485 |
на замовлення 100 шт: термін постачання 21-31 дні (днів) |
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Jan2N5416S | Microchip Technology |
Description: TRANS PNP 300V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 750 mW Grade: Military Qualification: MIL-PRF-19500/485 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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Jantxv2N5416S | Microchip Technology |
Description: TRANS PNP 300V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V Supplier Device Package: TO-39 (TO-205AD) Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 750 mW Grade: Military Qualification: MIL-PRF-19500/485 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
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2N5581 | Microchip Technology |
Description: TRANS NPN 50V 0.8A TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-46 (TO-206AB) Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| Jan2N5581 | Microchip Technology |
Description: TRANS NPN 50V 0.8A TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-46 (TO-206AB) Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/423 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| Jantx2N5581 | Microchip Technology |
Description: TRANS NPN 50V 0.8A TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-46 (TO-206AB) Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/423 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| Jantxv2N5581 | Microchip Technology |
Description: TRANS NPN 50V 0.8A TO46 Packaging: Bulk Package / Case: TO-206AB, TO-46-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V Supplier Device Package: TO-46 (TO-206AB) Current - Collector (Ic) (Max): 800 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 500 mW Grade: Military Qualification: MIL-PRF-19500/423 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JAN2N5664 | Microchip Technology |
Description: TRANS NPN 200V 5A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 2.5 W Qualification: MIL-PRF-19500/455 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTX2N5664 | Microchip Technology |
Description: TRANS NPN 200V 5A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 2.5 W Qualification: MIL-PRF-19500/455 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JAN2N5665 | Microchip Technology |
Description: TRANS NPN 300V 5A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 2.5 W Qualification: MIL-PRF-19500/455 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTXV2N5665 | Microchip Technology |
Description: TRANS NPN 300V 5A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 2.5 W Qualification: MIL-PRF-19500/455 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
|
|
Jantxv2N5667S | Microchip Technology |
Description: TRANS NPN 300V 5A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A Current - Collector Cutoff (Max): 200nA DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 1.2 W Qualification: MIL-PRF-19500/455 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
|
|
JAN2N5682 | Microchip Technology |
Description: TRANS NPN 120V 1A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 1 W Qualification: MIL-PRF-19500/583 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| JAN2N6051 | Microchip Technology |
Description: TRANS PNP DARL 80V 12A TO3 Packaging: Bulk Package / Case: TO-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-3 (TO-204AA) Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 150 W Grade: Military Qualification: MIL-PRF-19500/501 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTXV2N6051 | Microchip Technology |
Description: TRANS PNP DARL 80V 12A TO3 Packaging: Bulk Package / Case: TO-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-3 (TO-204AA) Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 150 W Grade: Military Qualification: MIL-PRF-19500/501 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JAN2N6052 | Microchip Technology |
Description: TRANS PNP DARL 100V 12A TO3 Packaging: Bulk Package / Case: TO-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-3 (TO-204AA) Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 150 W Grade: Military Qualification: MIL-PRF-19500/501 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JAN2N6058 | Microchip Technology |
Description: TRANS NPN DARL 80V 12A TO3 Packaging: Bulk Package / Case: TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-3 (TO-204AA) Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 150 W Grade: Military Qualification: MIL-PRF-19500/502 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTXV2N6058 | Microchip Technology |
Description: TRANS NPN DARL 80V 12A TO3 Packaging: Bulk Package / Case: TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-3 (TO-204AA) Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 150 W Grade: Military Qualification: MIL-PRF-19500/502 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JAN2N6059 | Microchip Technology |
Description: TRANS NPN DARL 100V 12A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-204AA (TO-3) Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 150 W Grade: Military Qualification: MIL-PRF-19500/502 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTX2N6059 | Microchip Technology |
Description: TRANS NPN DARL 100V 12A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-204AA (TO-3) Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 150 W Grade: Military Qualification: MIL-PRF-19500/502 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| Jantxv2N6059 | Microchip Technology |
Description: TRANS NPN DARL 100V 12A TO3 Packaging: Bulk Package / Case: TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V Supplier Device Package: TO-3 (TO-204AA) Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 150 W Grade: Military Qualification: MIL-PRF-19500/502 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
|
|
JAN2N6193 | Microchip Technology |
Description: TRANS PNP 100V 5A TO39 Packaging: Bulk Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A Current - Collector Cutoff (Max): 100µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V Supplier Device Package: TO-39 (TO-205AD) Grade: Military Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1 W Qualification: MIL-PRF-19500/561 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| JAN2N6283 | Microchip Technology |
Description: TRANS NPN DARL 80V 20A TO3 Packaging: Bulk Package / Case: TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V Supplier Device Package: TO-3 (TO-204AA) Grade: Military Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 175 W Qualification: MIL-PRF-19500/504 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTXV2N6283 | Microchip Technology |
Description: TRANS NPN DARL 80V 20A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V Supplier Device Package: TO-204AA (TO-3) Grade: Military Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 175 W Qualification: MIL-PRF-19500/504 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JAN2N6284 | Microchip Technology |
Description: TRANS NPN DARL 100V 20A TO3 Packaging: Bulk Package / Case: TO-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V Supplier Device Package: TO-3 (TO-204AA) Part Status: Discontinued at Digi-Key Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 175 W Grade: Military Qualification: MIL-PRF-19500/504 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTX2N6286 | Microchip Technology |
Description: TRANS PNP DARL 80V 20A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V Supplier Device Package: TO-204AA (TO-3) Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 175 W Grade: Military Qualification: MIL-PRF-19500/505 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTXV2N6286 | Microchip Technology |
Description: TRANS PNP DARL 80V 20A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V Supplier Device Package: TO-204AA (TO-3) Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 175 W Grade: Military Qualification: MIL-PRF-19500/505 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
 |
JAN2N6287 | Microchip Technology |
Description: TRANS PNP DARL 100V 20A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: -65°C ~ 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A Current - Collector Cutoff (Max): 1mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V Supplier Device Package: TO-204AA (TO-3) Part Status: Active Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 175 W Grade: Military Qualification: MIL-PRF-19500/505 |
товару немає в наявності |
В кошику од. на суму грн. | ||||
| JAN2N6298 | Microchip Technology |
Description: TRANS PNP DARL 60V 8A TO66 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTXV2N6298 | Microchip Technology |
Description: TRANS PNP DARL 60V 8A TO66 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JAN2N6300 | Microchip Technology |
Description: TRANS NPN DARL 60V 8A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 75 W Qualification: MIL-PRF-19500/539 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| Jantxv2N6300 | Microchip Technology |
Description: TRANS NPN DARL 60V 8A TO66 Packaging: Bulk Package / Case: TO-213AA, TO-66-2 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -55°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A Current - Collector Cutoff (Max): 500µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V Supplier Device Package: TO-66 (TO-213AA) Grade: Military Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 75 W Qualification: MIL-PRF-19500/539 |
товару немає в наявності |
В кошику од. на суму грн. | |||||
| JANTX2N6546 | Microchip Technology |
Description: TRANS NPN 300V 15A TO204AA Packaging: Bulk Package / Case: TO-204AA, TO-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 200°C (TJ) Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 15A DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 5A, 2V Supplier Device Package: TO-204AA (TO-3) Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 175 W Grade: Military Qualification: MIL-PRF-19500/525 |
товару немає в наявності |
В кошику од. на суму грн. |
| JANTXV2N4237 |
|
Виробник: Microchip Technology
Description: TRANS NPN 40V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/581
Description: TRANS NPN 40V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/581
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N4238 |
|
Виробник: Microchip Technology
Description: TRANS NPN 60V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/581
Description: TRANS NPN 60V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/581
товару немає в наявності
В кошику
од. на суму грн.
| JANTX2N4238 |
|
Виробник: Microchip Technology
Description: TRANS NPN 60V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/581
Description: TRANS NPN 60V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/581
товару немає в наявності
В кошику
од. на суму грн.
| JANTXV2N4238 |
|
Виробник: Microchip Technology
Description: TRANS NPN 60V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/581
Description: TRANS NPN 60V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/581
товару немає в наявності
В кошику
од. на суму грн.
| JAN2N4239 |
|
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
товару немає в наявності
В кошику
од. на суму грн.
| JANTX2N4239 |
|
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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| JANTXV2N4239 |
|
Виробник: Microchip Technology
Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
Description: TRANS NPN 80V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 250mA, 1V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1 W
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| 2N4261 |
|
Виробник: Microchip Technology
Description: TRANS PNP 15V 0.03A TO72
Packaging: Bulk
Package / Case: TO-72-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Supplier Device Package: TO-72
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Description: TRANS PNP 15V 0.03A TO72
Packaging: Bulk
Package / Case: TO-72-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Supplier Device Package: TO-72
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
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В кошику
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| JAN2N4261 |
|
Виробник: Microchip Technology
Description: TRANS PNP 15V 0.03A TO72
Packaging: Bulk
Package / Case: TO-72-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Supplier Device Package: TO-72
Grade: Military
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Qualification: MIL-PRF-19500/511
Description: TRANS PNP 15V 0.03A TO72
Packaging: Bulk
Package / Case: TO-72-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Supplier Device Package: TO-72
Grade: Military
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Qualification: MIL-PRF-19500/511
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В кошику
од. на суму грн.
| JANTXV2N4261 |
|
Виробник: Microchip Technology
Description: TRANS PNP 15V 0.03A TO72
Packaging: Bulk
Package / Case: TO-72-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Supplier Device Package: TO-72
Grade: Military
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Qualification: MIL-PRF-19500/511
Description: TRANS PNP 15V 0.03A TO72
Packaging: Bulk
Package / Case: TO-72-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Supplier Device Package: TO-72
Grade: Military
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Qualification: MIL-PRF-19500/511
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од. на суму грн.
| 2N4261UB |
|
Виробник: Microchip Technology
Description: TRANS PNP 15V 0.03A
Description: TRANS PNP 15V 0.03A
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В кошику
од. на суму грн.
| JAN2N4261UB |
|
Виробник: Microchip Technology
Description: TRANS PNP 15V 0.03A
Description: TRANS PNP 15V 0.03A
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В кошику
од. на суму грн.
| JANTX2N4261UB |
|
Виробник: Microchip Technology
Description: TRANS PNP 15V 0.03A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Qualification: MIL-PRF-19500/511
Description: TRANS PNP 15V 0.03A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 1V
Supplier Device Package: UB
Grade: Military
Current - Collector (Ic) (Max): 30 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Qualification: MIL-PRF-19500/511
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В кошику
од. на суму грн.
| JANTXV2N4261UB |
|
Виробник: Microchip Technology
Description: TRANS PNP 15V 0.03A
Description: TRANS PNP 15V 0.03A
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В кошику
од. на суму грн.
| 2N4449 |
|
Виробник: Microchip Technology
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
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В кошику
од. на суму грн.
| JAN2N4449 |
|
Виробник: Microchip Technology
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
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В кошику
од. на суму грн.
| JANTX2N4449 |
|
Виробник: Microchip Technology
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
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В кошику
од. на суму грн.
| Jantxv2N4449 |
|
Виробник: Microchip Technology
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
Description: TRANS NPN 20V TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-46 (TO-206AB)
Grade: Military
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 360 mW
Qualification: MIL-PRF-19500/317
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В кошику
од. на суму грн.
| JAN2N5339 |
|
Виробник: Microchip Technology
Description: TRANS NPN 100V 5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/560
Description: TRANS NPN 100V 5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/560
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од. на суму грн.
| Jantxv2N5339 |
|
Виробник: Microchip Technology
Description: TRANS NPN 100V 5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/560
Description: TRANS NPN 100V 5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Grade: Military
Qualification: MIL-PRF-19500/560
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од. на суму грн.
| JAN2N5415 |
|
Виробник: Microchip Technology
Description: TRANS PNP 200V 1A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 200V 1A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
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В кошику
од. на суму грн.
| Jantxv2N5415 |
|
Виробник: Microchip Technology
Description: TRANS PNP 200V 1A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 200V 1A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
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В кошику
од. на суму грн.
| JAN2N5415S |
|
Виробник: Microchip Technology
Description: TRANS PNP 200V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 200V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
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В кошику
од. на суму грн.
| Jantx2N5415S |
|
Виробник: Microchip Technology
Description: TRANS PNP 200V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 200V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
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В кошику
од. на суму грн.
| Jantxv2N5415S |
|
Виробник: Microchip Technology
Description: TRANS PNP 200V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 200V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
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од. на суму грн.
| JAN2N5416 |
|
Виробник: Microchip Technology
Description: TRANS PNP 300V 1A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 300V 1A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Qualification: MIL-PRF-19500/485
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В кошику
од. на суму грн.
| JANTX2N5416 |
|
Виробник: Microchip Technology
Description: TRANS PNP 300V 1A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 300V 1A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
на замовлення 100 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 831.77 грн |
| 100+ | 743.22 грн |
| Jan2N5416S |
|
Виробник: Microchip Technology
Description: TRANS PNP 300V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 300V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
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В кошику
од. на суму грн.
| Jantxv2N5416S |
|
Виробник: Microchip Technology
Description: TRANS PNP 300V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
Description: TRANS PNP 300V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 750 mW
Grade: Military
Qualification: MIL-PRF-19500/485
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| 2N5581 |
|
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46 (TO-206AB)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Description: TRANS NPN 50V 0.8A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46 (TO-206AB)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
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В кошику
од. на суму грн.
| Jan2N5581 |
|
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46 (TO-206AB)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/423
Description: TRANS NPN 50V 0.8A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46 (TO-206AB)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/423
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В кошику
од. на суму грн.
| Jantx2N5581 |
|
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46 (TO-206AB)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/423
Description: TRANS NPN 50V 0.8A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46 (TO-206AB)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/423
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В кошику
од. на суму грн.
| Jantxv2N5581 |
|
Виробник: Microchip Technology
Description: TRANS NPN 50V 0.8A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46 (TO-206AB)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/423
Description: TRANS NPN 50V 0.8A TO46
Packaging: Bulk
Package / Case: TO-206AB, TO-46-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Supplier Device Package: TO-46 (TO-206AB)
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/423
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В кошику
од. на суму грн.
| JAN2N5664 |
|
Виробник: Microchip Technology
Description: TRANS NPN 200V 5A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/455
Description: TRANS NPN 200V 5A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/455
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В кошику
од. на суму грн.
| JANTX2N5664 |
|
Виробник: Microchip Technology
Description: TRANS NPN 200V 5A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/455
Description: TRANS NPN 200V 5A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 1A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/455
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од. на суму грн.
| JAN2N5665 |
|
Виробник: Microchip Technology
Description: TRANS NPN 300V 5A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/455
Description: TRANS NPN 300V 5A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/455
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од. на суму грн.
| JANTXV2N5665 |
|
Виробник: Microchip Technology
Description: TRANS NPN 300V 5A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/455
Description: TRANS NPN 300V 5A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 2.5 W
Qualification: MIL-PRF-19500/455
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В кошику
од. на суму грн.
| Jantxv2N5667S |
|
Виробник: Microchip Technology
Description: TRANS NPN 300V 5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.2 W
Qualification: MIL-PRF-19500/455
Description: TRANS NPN 300V 5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 5A
Current - Collector Cutoff (Max): 200nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 5V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 1.2 W
Qualification: MIL-PRF-19500/455
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од. на суму грн.
| JAN2N5682 |
|
Виробник: Microchip Technology
Description: TRANS NPN 120V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/583
Description: TRANS NPN 120V 1A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/583
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од. на суму грн.
| JAN2N6051 |
|
Виробник: Microchip Technology
Description: TRANS PNP DARL 80V 12A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 150 W
Grade: Military
Qualification: MIL-PRF-19500/501
Description: TRANS PNP DARL 80V 12A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 150 W
Grade: Military
Qualification: MIL-PRF-19500/501
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од. на суму грн.
| JANTXV2N6051 |
|
Виробник: Microchip Technology
Description: TRANS PNP DARL 80V 12A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 150 W
Grade: Military
Qualification: MIL-PRF-19500/501
Description: TRANS PNP DARL 80V 12A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 150 W
Grade: Military
Qualification: MIL-PRF-19500/501
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| JAN2N6052 |
|
Виробник: Microchip Technology
Description: TRANS PNP DARL 100V 12A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 150 W
Grade: Military
Qualification: MIL-PRF-19500/501
Description: TRANS PNP DARL 100V 12A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 150 W
Grade: Military
Qualification: MIL-PRF-19500/501
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| JAN2N6058 |
|
Виробник: Microchip Technology
Description: TRANS NPN DARL 80V 12A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 150 W
Grade: Military
Qualification: MIL-PRF-19500/502
Description: TRANS NPN DARL 80V 12A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 150 W
Grade: Military
Qualification: MIL-PRF-19500/502
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| JANTXV2N6058 |
|
Виробник: Microchip Technology
Description: TRANS NPN DARL 80V 12A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 150 W
Grade: Military
Qualification: MIL-PRF-19500/502
Description: TRANS NPN DARL 80V 12A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 150 W
Grade: Military
Qualification: MIL-PRF-19500/502
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| JAN2N6059 |
|
Виробник: Microchip Technology
Description: TRANS NPN DARL 100V 12A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 150 W
Grade: Military
Qualification: MIL-PRF-19500/502
Description: TRANS NPN DARL 100V 12A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 150 W
Grade: Military
Qualification: MIL-PRF-19500/502
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| JANTX2N6059 |
|
Виробник: Microchip Technology
Description: TRANS NPN DARL 100V 12A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 150 W
Grade: Military
Qualification: MIL-PRF-19500/502
Description: TRANS NPN DARL 100V 12A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 150 W
Grade: Military
Qualification: MIL-PRF-19500/502
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В кошику
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| Jantxv2N6059 |
|
Виробник: Microchip Technology
Description: TRANS NPN DARL 100V 12A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 150 W
Grade: Military
Qualification: MIL-PRF-19500/502
Description: TRANS NPN DARL 100V 12A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 120mA, 12A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 6A, 3V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 150 W
Grade: Military
Qualification: MIL-PRF-19500/502
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| JAN2N6193 |
|
Виробник: Microchip Technology
Description: TRANS PNP 100V 5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/561
Description: TRANS PNP 100V 5A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 500mA, 5A
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 2V
Supplier Device Package: TO-39 (TO-205AD)
Grade: Military
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 1 W
Qualification: MIL-PRF-19500/561
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| JAN2N6283 |
|
Виробник: Microchip Technology
Description: TRANS NPN DARL 80V 20A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 175 W
Qualification: MIL-PRF-19500/504
Description: TRANS NPN DARL 80V 20A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V
Supplier Device Package: TO-3 (TO-204AA)
Grade: Military
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 175 W
Qualification: MIL-PRF-19500/504
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| JANTXV2N6283 |
|
Виробник: Microchip Technology
Description: TRANS NPN DARL 80V 20A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 175 W
Qualification: MIL-PRF-19500/504
Description: TRANS NPN DARL 80V 20A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V
Supplier Device Package: TO-204AA (TO-3)
Grade: Military
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 175 W
Qualification: MIL-PRF-19500/504
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од. на суму грн.
| JAN2N6284 |
|
Виробник: Microchip Technology
Description: TRANS NPN DARL 100V 20A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
Grade: Military
Qualification: MIL-PRF-19500/504
Description: TRANS NPN DARL 100V 20A TO3
Packaging: Bulk
Package / Case: TO-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V
Supplier Device Package: TO-3 (TO-204AA)
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
Grade: Military
Qualification: MIL-PRF-19500/504
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В кошику
од. на суму грн.
| JANTX2N6286 |
|
Виробник: Microchip Technology
Description: TRANS PNP DARL 80V 20A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 175 W
Grade: Military
Qualification: MIL-PRF-19500/505
Description: TRANS PNP DARL 80V 20A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 175 W
Grade: Military
Qualification: MIL-PRF-19500/505
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| JANTXV2N6286 |
|
Виробник: Microchip Technology
Description: TRANS PNP DARL 80V 20A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 175 W
Grade: Military
Qualification: MIL-PRF-19500/505
Description: TRANS PNP DARL 80V 20A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 175 W
Grade: Military
Qualification: MIL-PRF-19500/505
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| JAN2N6287 |
|
Виробник: Microchip Technology
Description: TRANS PNP DARL 100V 20A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
Grade: Military
Qualification: MIL-PRF-19500/505
Description: TRANS PNP DARL 100V 20A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -65°C ~ 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 200mA, 20A
Current - Collector Cutoff (Max): 1mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1250 @ 10A, 3V
Supplier Device Package: TO-204AA (TO-3)
Part Status: Active
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 175 W
Grade: Military
Qualification: MIL-PRF-19500/505
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| JAN2N6298 |
|
Виробник: Microchip Technology
Description: TRANS PNP DARL 60V 8A TO66
Description: TRANS PNP DARL 60V 8A TO66
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| JANTXV2N6298 |
|
Виробник: Microchip Technology
Description: TRANS PNP DARL 60V 8A TO66
Description: TRANS PNP DARL 60V 8A TO66
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| JAN2N6300 |
|
Виробник: Microchip Technology
Description: TRANS NPN DARL 60V 8A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
Qualification: MIL-PRF-19500/539
Description: TRANS NPN DARL 60V 8A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
Qualification: MIL-PRF-19500/539
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| Jantxv2N6300 |
|
Виробник: Microchip Technology
Description: TRANS NPN DARL 60V 8A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
Qualification: MIL-PRF-19500/539
Description: TRANS NPN DARL 60V 8A TO66
Packaging: Bulk
Package / Case: TO-213AA, TO-66-2
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 80mA, 8A
Current - Collector Cutoff (Max): 500µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 750 @ 4A, 3V
Supplier Device Package: TO-66 (TO-213AA)
Grade: Military
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 75 W
Qualification: MIL-PRF-19500/539
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| JANTX2N6546 |
|
Виробник: Microchip Technology
Description: TRANS NPN 300V 15A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 15A
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 5A, 2V
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 175 W
Grade: Military
Qualification: MIL-PRF-19500/525
Description: TRANS NPN 300V 15A TO204AA
Packaging: Bulk
Package / Case: TO-204AA, TO-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 5V @ 3A, 15A
DC Current Gain (hFE) (Min) @ Ic, Vce: 12 @ 5A, 2V
Supplier Device Package: TO-204AA (TO-3)
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 175 W
Grade: Military
Qualification: MIL-PRF-19500/525
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